Year |
Citation |
Score |
2019 |
Kim J, Hazard TM, Houck AA, Lyon SA. A low-disorder metal-oxide-silicon double quantum dot Applied Physics Letters. 114: 043501. DOI: 10.1063/1.5075486 |
0.401 |
|
2019 |
Asfaw AT, Kleinbaum EI, Henry MD, Shaner EA, Lyon SA. Transport Measurements of Surface Electrons in 200-nm-Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes Journal of Low Temperature Physics. 195: 300-306. DOI: 10.1007/s10909-018-02139-6 |
0.549 |
|
2018 |
Rose BC, Huang D, Zhang ZH, Stevenson P, Tyryshkin AM, Sangtawesin S, Srinivasan S, Loudin L, Markham ML, Edmonds AM, Twitchen DJ, Lyon SA, de Leon NP. Observation of an environmentally insensitive solid-state spin defect in diamond. Science (New York, N.Y.). 361: 60-63. PMID 29976820 DOI: 10.1126/Science.Aao0290 |
0.422 |
|
2018 |
Rose BC, Thiering G, Tyryshkin AM, Edmonds AM, Markham ML, Gali A, Lyon SA, de Leon NP. Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond Physical Review B. 98. DOI: 10.1103/Physrevb.98.235140 |
0.397 |
|
2017 |
Sigillito AJ, Tyryshkin AM, Schenkel T, Houck AA, Lyon SA. All-electric control of donor nuclear spin qubits in silicon. Nature Nanotechnology. PMID 28805818 DOI: 10.1038/Nnano.2017.154 |
0.48 |
|
2017 |
Eichler C, Sigillito AJ, Lyon SA, Petta JR. Electron Spin Resonance at the Level of 10^{4} Spins Using Low Impedance Superconducting Resonators. Physical Review Letters. 118: 037701. PMID 28157376 DOI: 10.1103/Physrevlett.118.037701 |
0.392 |
|
2017 |
Kamburov D, Baldwin KW, West KW, Lyon S, Pfeiffer LN, Pinczuk A. Use of micro-photoluminescence as a contactless measure of the 2D electron density in a GaAs quantum well Applied Physics Letters. 110: 262104. DOI: 10.1063/1.4985439 |
0.414 |
|
2017 |
Kim J, Tyryshkin AM, Lyon SA. Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors Applied Physics Letters. 110: 123505. DOI: 10.1063/1.4979035 |
0.383 |
|
2017 |
Rose B, Weis C, Tyryshkin A, Schenkel T, Lyon S. Spin coherence and 14 N ESEEM effects of nitrogen-vacancy centers in diamond with X-band pulsed ESR Diamond and Related Materials. 72: 32-40. DOI: 10.1016/J.Diamond.2016.12.009 |
0.352 |
|
2016 |
Sigillito AJ, Tyryshkin AM, Beeman JW, Haller EE, Itoh KM, Lyon SA. Large Stark tuning of donor electron spin qubits in germanium Physical Review B. 94. DOI: 10.1103/Physrevb.94.125204 |
0.442 |
|
2016 |
Petersen ES, Tyryshkin AM, Morton JJL, Abe E, Tojo S, Itoh KM, Thewalt MLW, Lyon SA. Nuclear spin decoherence of neutral P 31 donors in silicon: Effect of environmental Si 29 nuclei Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.161202 |
0.377 |
|
2016 |
Yasukawa T, Sigillito AJ, Rose BC, Tyryshkin AM, Lyon SA. Addressing spin transitions on Bi 209 donors in silicon using circularly polarized microwaves Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.121306 |
0.393 |
|
2015 |
Lo CC, Urdampilleta M, Ross P, Gonzalez-Zalba MF, Mansir J, Lyon SA, Thewalt ML, Morton JJ. Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon. Nature Materials. 14: 490-4. PMID 25799326 DOI: 10.1038/Nmat4250 |
0.457 |
|
2015 |
Sigillito AJ, Jock RM, Tyryshkin AM, Beeman JW, Haller EE, Itoh KM, Lyon SA. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium Physical Review Letters. 115. DOI: 10.1103/Physrevlett.115.247601 |
0.391 |
|
2015 |
Lo Nardo R, Wolfowicz G, Simmons S, Tyryshkin AM, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Steger M, Lyon SA, Thewalt MLW, Morton JJL. Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.165201 |
0.377 |
|
2015 |
Shankar S, Tyryshkin AM, Lyon SA. ESR measurements of phosphorus dimers in isotopically enriched Si 28 silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.245206 |
0.371 |
|
2014 |
Sekiguchi T, Tyryshkin AM, Tojo S, Abe E, Mori R, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Ager JW, Haller EE, Thewalt MLW, Morton JJL, Lyon SA, Itoh KM. Host isotope mass effects on the hyperfine interaction of group-V donors in silicon Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121203 |
0.303 |
|
2014 |
Takita M, Lyon SA. Isolating electrons on superfluid helium Journal of Physics: Conference Series. 568. DOI: 10.1088/1742-6596/568/5/052034 |
0.641 |
|
2014 |
Sigillito AJ, Malissa H, Tyryshkin AM, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Thewalt MLW, Itoh KM, Morton JJL, Houck AA, Schuster DI, Lyon SA. Fast, low-power manipulation of spin ensembles in superconducting microresonators Applied Physics Letters. 104. DOI: 10.1063/1.4881613 |
0.367 |
|
2014 |
Lo CC, Simmons S, Lo Nardo R, Weis CD, Tyryshkin AM, Meijer J, Rogalla D, Lyon SA, Bokor J, Schenkel T, Morton JJL. Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures Applied Physics Letters. 104. DOI: 10.1063/1.4876175 |
0.364 |
|
2013 |
Wolfowicz G, Tyryshkin AM, George RE, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Thewalt ML, Lyon SA, Morton JJ. Atomic clock transitions in silicon-based spin qubits. Nature Nanotechnology. 8: 561-4. PMID 23793304 DOI: 10.1038/Nnano.2013.117 |
0.427 |
|
2013 |
Malissa H, Schuster DI, Tyryshkin AM, Houck AA, Lyon SA. Superconducting coplanar waveguide resonators for low temperature pulsed electron spin resonance spectroscopy. The Review of Scientific Instruments. 84: 025116. PMID 23464260 DOI: 10.1063/1.4792205 |
0.376 |
|
2013 |
Wolfowicz G, Tyryshkin AM, George RE, Riemann H, Abrosimov NV, Becker P, Pohl H, Thewalt MLW, Lyon SA, Morton JJL. Erratum: Atomic clock transitions in silicon-based spin qubits Nature Nanotechnology. 8: 881-881. DOI: 10.1038/Nnano.2013.218 |
0.367 |
|
2012 |
Tyryshkin AM, Tojo S, Morton JJ, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Schenkel T, Thewalt ML, Itoh KM, Lyon SA. Electron spin coherence exceeding seconds in high-purity silicon. Nature Materials. 11: 143-7. PMID 22138791 DOI: 10.1038/Nmat3182 |
0.469 |
|
2012 |
Lyon SA, Tyryshkin AM, He J, Jock RM. Spin coherence in Si and applications to quantum information processing Ecs Transactions. 50: 647-654. DOI: 10.1149/05009.0647ecst |
0.428 |
|
2012 |
Wolfowicz G, Simmons S, Tyryshkin AM, George RE, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Lyon SA, Thewalt MLW, Morton JJL. Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.245301 |
0.438 |
|
2012 |
Havlicek M, Jantsch W, Wilamowski Z, Yanagi K, Kataura H, Rümmeli MH, Malissa H, Tyryshkin A, Lyon S, Chernov A, Kuzmany H. Indirect exchange interaction in fully metal-semiconductor separated single-walled carbon nanotubes revealed by electron spin resonance Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.045402 |
0.355 |
|
2012 |
Wang ZH, Zhang W, Tyryshkin AM, Lyon SA, Ager JW, Haller EE, Dobrovitski VV. Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.085206 |
0.33 |
|
2012 |
Takita M, Bradbury FR, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Spatial distribution of electrons on a superfluid helium charge-coupled device Journal of Physics: Conference Series. 400. DOI: 10.1088/1742-6596/400/4/042059 |
0.785 |
|
2012 |
Weis CD, Lo CC, Lang V, Tyryshkin AM, George RE, Yu KM, Bokor J, Lyon SA, Morton JJL, Schenkel T. Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 Applied Physics Letters. 100. DOI: 10.1063/1.4704561 |
0.368 |
|
2012 |
Lo CC, Bradbury FR, Tyryshkin AM, Weis CD, Bokor J, Schenkel T, Lyon SA. Suppression of microwave rectification effects in electrically detected magnetic resonance measurements Applied Physics Letters. 100. DOI: 10.1063/1.3684247 |
0.748 |
|
2012 |
Jock RM, Shankar S, Tyryshkin AM, He J, Eng K, Childs KD, Tracy LA, Lilly MP, Carroll MS, Lyon SA. Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance Applied Physics Letters. 100. DOI: 10.1063/1.3675862 |
0.577 |
|
2011 |
Bradbury FR, Takita M, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Efficient clocked electron transfer on superfluid helium. Physical Review Letters. 107: 266803. PMID 22243176 DOI: 10.1103/Physrevlett.107.266803 |
0.792 |
|
2011 |
Morton JJ, McCamey DR, Eriksson MA, Lyon SA. Embracing the quantum limit in silicon computing. Nature. 479: 345-53. PMID 22094695 DOI: 10.1038/Nature10681 |
0.411 |
|
2011 |
Lo CC, Lang V, George RE, Morton JJ, Tyryshkin AM, Lyon SA, Bokor J, Schenkel T. Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas. Physical Review Letters. 106: 207601. PMID 21668263 DOI: 10.1103/Physrevlett.106.207601 |
0.382 |
|
2011 |
Brown RM, Tyryshkin AM, Porfyrakis K, Gauger EM, Lovett BW, Ardavan A, Lyon SA, Briggs GA, Morton JJ. Coherent state transfer between an electron and nuclear spin in (15)N@C(60). Physical Review Letters. 106: 110504. PMID 21469852 DOI: 10.1103/Physrevlett.106.110504 |
0.401 |
|
2011 |
Lang V, Lo CC, George RE, Lyon SA, Bokor J, Schenkel T, Ardavan A, Morton JJ. Electrically detected magnetic resonance in a W-band microwave cavity. The Review of Scientific Instruments. 82: 034704. PMID 21456773 DOI: 10.1063/1.3557395 |
0.333 |
|
2011 |
Passmore BS, Adams DC, Ribaudo T, Wasserman D, Lyon S, Davids P, Chow WW, Shaner EA. Observation of Rabi splitting from surface plasmon coupled conduction state transitions in electrically excited InAs quantum dots. Nano Letters. 11: 338-42. PMID 21214167 DOI: 10.1021/Nl102412H |
0.769 |
|
2010 |
Schuster DI, Fragner A, Dykman MI, Lyon SA, Schoelkopf RJ. Proposal for manipulating and detecting spin and orbital States of trapped electrons on helium using cavity quantum electrodynamics. Physical Review Letters. 105: 040503. PMID 20867827 DOI: 10.1103/Physrevlett.105.040503 |
0.5 |
|
2010 |
Passmore B, Adams D, Ribaudo T, Wasserman D, Lyon S, Shaner E. Mid-infrared electroluminescence from surface plasmon coupled InAs quantum dots Materials Research Society Symposium Proceedings. 1208: 184-188. DOI: 10.1557/Proc-1208-O07-02 |
0.738 |
|
2010 |
Shaner EA, Passmore BS, Adams D, Ribaudo T, Lyon SA, Chow W, Wasserman D. Mid-infrared surface plasmon coupled emitters utilizing intersublevel transitions in InAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 7756. DOI: 10.1117/12.861060 |
0.747 |
|
2010 |
Ribaudo T, Passmore BS, Adams DC, Qian X, Vangala S, Goodhue WD, Shaner EA, Lyon SA, Wasserman D. Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.843033 |
0.696 |
|
2010 |
Shankar S, Tyryshkin AM, He J, Lyon SA. Spin relaxation and coherence times for electrons at the Si/SiO2 interface Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.195323 |
0.599 |
|
2010 |
Abe E, Tyryshkin AM, Tojo S, Morton JJL, Witzel WM, Fujimoto A, Ager JW, Haller EE, Isoya J, Lyon SA, Thewalt MLW, Itoh KM. Electron spin coherence of phosphorus donors in silicon: Effect of environmental nuclei Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.121201 |
0.393 |
|
2010 |
Tezuka H, Stegner AR, Tyryshkin AM, Shankar S, Thewalt MLW, Lyon SA, Itoh KM, Brandt MS. Electron paramagnetic resonance of boron acceptors in isotopically purified silicon Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.161203 |
0.4 |
|
2010 |
Shankar S, Sabouret G, Lyon SA. A low power photoemission source for electrons on liquid helium Journal of Low Temperature Physics. 161: 410-416. DOI: 10.1007/S10909-010-0204-5 |
0.36 |
|
2009 |
Wasserman D, Ribaudo T, Lyon SA, Lyo SK, Shaner EA. Room temperature midinfrared electroluminescence from InAs quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3080688 |
0.747 |
|
2008 |
Lu TM, Sun L, Tsui DC, Lyon S, Pan W, Mühlberger M, Schäffler F, Liu J, Xie YH. In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.233309 |
0.418 |
|
2008 |
Chi E, Lyon SA, Martonosi M. Deterministic error model for quantum computer simulation Physical Review a - Atomic, Molecular, and Optical Physics. 77. DOI: 10.1103/Physreva.77.052315 |
0.339 |
|
2008 |
Lo CC, Bokor J, Schenkel T, He J, Tyryshkin AM, Lyon SA. Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors (Applied Physics Letters (2007) 91 (242106)) Applied Physics Letters. 92. DOI: 10.1063/1.2890086 |
0.523 |
|
2008 |
Sabouret G, Bradbury FR, Shankar S, Bert JA, Lyon SA. Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels Applied Physics Letters. 92. DOI: 10.1063/1.2884693 |
0.772 |
|
2008 |
Morton JJL, Tyryshkin AM, Brown RM, Shankar S, Lovett BW, Ardavan A, Schenkel T, Haller EE, Ager JW, Lyon SA. Solid-state quantum memory using the 31P nuclear spin Nature. 455: 1085-1088. DOI: 10.1038/Nature07295 |
0.463 |
|
2008 |
Shankar S, Tyryshkin AM, Avasthi S, Lyon SA. Spin resonance of 2D electrons in a large-area silicon MOSFET Physica E: Low-Dimensional Systems and Nanostructures. 40: 1659-1661. DOI: 10.1016/J.Physe.2007.10.030 |
0.425 |
|
2007 |
Chi E, Lyon SA, Martonosi M. Tailoring quantum architectures to implementation style: A quantum computer for mobile and persistent qubits Proceedings - International Symposium On Computer Architecture. 198-209. DOI: 10.1145/1250662.1250687 |
0.319 |
|
2007 |
Mitrović VF, Horvatić M, Berthier C, Lyon SA, Shayegan M. NMR study of large skyrmions in Al0.13 Ga0.87 As quantum wells Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.115335 |
0.402 |
|
2007 |
Morton JJL, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GAD. Environmental effects on electron spin relaxation in N@ C60 Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.085418 |
0.337 |
|
2007 |
Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033314 |
0.355 |
|
2007 |
Lo CC, Bokor J, Schenkel T, Tyryshkin AM, Lyon SA. Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors Applied Physics Letters. 91: 242106. DOI: 10.1063/1.2817966 |
0.436 |
|
2007 |
Ardavan A, Morton JJL, Benjamin SC, Porfyrakis K, Briggs GAD, Tyryshkin AM, Lyon SA. Manipulation of quantum information in N@C60 using electron and nuclear magnetic resonance Physica Status Solidi (B) Basic Research. 244: 3874-3878. DOI: 10.1002/Pssb.200776192 |
0.465 |
|
2006 |
Bradbury FR, Tyryshkin AM, Sabouret G, Bokor J, Schenkel T, Lyon SA. Stark tuning of donor electron spins in silicon. Physical Review Letters. 97: 176404. PMID 17155489 DOI: 10.1103/Physrevlett.97.176404 |
0.779 |
|
2006 |
Tyryshkin AM, Morton JJ, Ardavan A, Lyon SA. Davies electron-nuclear double resonance revisited: enhanced sensitivity and nuclear spin relaxation. The Journal of Chemical Physics. 124: 234508. PMID 16821930 DOI: 10.1063/1.2204915 |
0.374 |
|
2006 |
Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Intervalley gap anomaly of two-dimensional electrons in silicon. Physical Review Letters. 96: 076805. PMID 16606125 DOI: 10.1103/Physrevlett.96.076805 |
0.441 |
|
2006 |
Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Andrew D Briggs G. Electron spin relaxation of N@C60 in CS2 in CS2. The Journal of Chemical Physics. 124: 14508. PMID 16409042 DOI: 10.1063/1.2147262 |
0.355 |
|
2006 |
Wasserman D, Howard SH, Gmachl C, Lyon SA, Cederberg J, Shaner EA. Mid-infrared electroluminescence from InAs self-assembled quantum dots Proceedings of Spie - the International Society For Optical Engineering. 6386: 63860E. DOI: 10.1117/12.689191 |
0.646 |
|
2006 |
Lai K, Lu TM, Pan W, Tsui DC, Lyon S, Liu J, Xie YH, Mühlberger M, Schäffler F. Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.161301 |
0.374 |
|
2006 |
Lyon SA. Spin-based quantum computing using electrons on liquid helium Physical Review a - Atomic, Molecular, and Optical Physics. 74. DOI: 10.1103/Physreva.74.052338 |
0.483 |
|
2006 |
Benjamin SC, Ardavan A, Briggs GAD, Britz DA, Gunlycke D, Jefferson J, Jones MAG, Leigh DF, Lovett BW, Khlobystov AN, Lyon SA, Morton JJL, Porfyrakis K, Sambrook MR, Tyryshkin AM. Towards a fullerene-based quantum computer Journal of Physics Condensed Matter. 18: S867-S883. DOI: 10.1088/0953-8984/18/21/S12 |
0.415 |
|
2006 |
Tyryshkin AM, Morton JJL, Benjamin SC, Ardavan A, Briggs GAD, Ager JW, Lyon SA. Coherence of spin qubits in silicon Journal of Physics Condensed Matter. 18: S783-S794. DOI: 10.1088/0953-8984/18/21/S06 |
0.539 |
|
2006 |
Sabouret G, Lyon SA. Measurement of the charge transfer efficiency of electrons clocked on superfluid helium Applied Physics Letters. 88. DOI: 10.1063/1.2213009 |
0.451 |
|
2006 |
Wasserman D, Gmachl C, Lyon SA, Shaner EA. Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots Applied Physics Letters. 88. DOI: 10.1063/1.2202824 |
0.753 |
|
2006 |
Schenkel T, Liddle JA, Persaud A, Tyryshkin AM, Lyon SA, De Sousa R, Whaley KB, Bokor J, Shangkuan J, Chakarov I. Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon Applied Physics Letters. 88. DOI: 10.1063/1.2182068 |
0.436 |
|
2006 |
Morton JJL, Tyryshkin AM, Ardavan A, Benjamin SC, Porfyrakis K, Lyon SA, Briggs GAD. Bang-bang control of fullerene qubits using ultrafast phase gates Nature Physics. 2: 40-43. DOI: 10.1038/Nphys192 |
0.444 |
|
2006 |
Tyryshkin AM, Lyon SA, Schenkel T, Bokor J, Chu J, Jantsch W, Schäffler F, Truitt JL, Coppersmith SN, Eriksson MA. Electron spin coherence in Si Physica E: Low-Dimensional Systems and Nanostructures. 35: 257-263. DOI: 10.1016/J.Physe.2006.08.021 |
0.444 |
|
2006 |
Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Quantum Hall ferromagnetism in a two-valley strained Si quantum well Physica E: Low-Dimensional Systems and Nanostructures. 34: 176-178. DOI: 10.1016/J.Physe.2006.03.009 |
0.466 |
|
2006 |
Yang A, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA. Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions Physica B: Condensed Matter. 376: 54-56. DOI: 10.1016/J.Physb.2005.12.015 |
0.308 |
|
2006 |
Malissa H, Jantsch W, Chen G, Gruber D, Lichtenberger H, Schäffler F, Wilamowski Z, Tyryshkin A, Lyon S. Investigation of the spin properties of electrons in zero-dimensional SiGe structures by electron paramagnetic resonance Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 126: 172-175. DOI: 10.1016/J.Mseb.2005.09.052 |
0.511 |
|
2006 |
Schenkel T, Liddle JA, Bokor J, Persaud A, Park SJ, Shangkuan J, Lo CC, Kwon S, Lyon SA, Tyryshkin AM, Rangelow IW, Sarov Y, Schneider DH, Ager J, de Sousa R. Strategies for integration of donor electron spin qubits in silicon Microelectronic Engineering. 83: 1814-1817. DOI: 10.1016/J.Mee.2006.01.234 |
0.436 |
|
2006 |
Morton JJL, Tyryshkin AM, Ardavan A, Benjamin SC, Porfyrakis K, Lyon SA, Briggs GAD. The N@C60 nuclear spin qubit: Bang-bang decoupling and ultrafast phase gates Physica Status Solidi (B) Basic Research. 243: 3028-3031. DOI: 10.1002/Pssb.200669118 |
0.388 |
|
2005 |
Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GA. High fidelity single qubit operations using pulsed electron paramagnetic resonance. Physical Review Letters. 95: 200501. PMID 16384042 DOI: 10.1103/Physrevlett.95.200501 |
0.421 |
|
2005 |
Morton JJ, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GA. A new mechanism for electron spin echo envelope modulation. The Journal of Chemical Physics. 122: 174504. PMID 15910042 DOI: 10.1063/1.1888585 |
0.391 |
|
2005 |
Wasserman D, Shaner EA, Lyon SA, Hadjipanayi M, Maciel AC, Ryan JF. (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment Materials Research Society Symposium Proceedings. 829: 21-32. DOI: 10.1557/Proc-829-B1.5 |
0.725 |
|
2005 |
Tyryshkin AM, Lyon SA, Jantsch W, Schäffler F. Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells Physical Review Letters. 94. DOI: 10.1103/Physrevlett.94.126802 |
0.522 |
|
2005 |
Winkler R, Tutuc E, Papadakis SJ, Melinte S, Shayegan M, Wasserman D, Lyon SA. Anomalous spin polarization of GaAs two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195321 |
0.579 |
|
2005 |
Lai K, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.081313 |
0.397 |
|
2005 |
Morton JJL, Tyryshkin AM, Ardavan A, Porfyrakis K, Lyon SA, Briggs GAD. Measuring errors in single-qubit rotations by pulsed electron paramagnetic resonance Physical Review a - Atomic, Molecular, and Optical Physics. 71. DOI: 10.1103/Physreva.71.012332 |
0.418 |
|
2005 |
Lai K, Ye PD, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Modulation of the high mobility two-dimensional electrons in SiSiGe using atomic-layer-deposited gate dielectric Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076439 |
0.383 |
|
2004 |
Shaner EA, Lyon SA. Picosecond time-resolved two-dimensional ballistic electron transport. Physical Review Letters. 93: 037402. PMID 15323867 DOI: 10.1103/Physrevlett.93.037402 |
0.626 |
|
2004 |
Lai K, Pan W, Tsui DC, Lyon S, Muhlberger M, Schaffler F. The two-flux composite fermion series of fractional quantum Hall states in strained (100) Si International Journal of Modern Physics B. 18: 3533-3535. DOI: 10.1142/S0217979204026950 |
0.358 |
|
2004 |
Lyon SA. Relaxation of candidate electron spin qubits Proceedings of Spie - the International Society For Optical Engineering. 5472: 97-106. DOI: 10.1117/12.550634 |
0.371 |
|
2004 |
Shaner EA, Lyon SA, Engel LW. Picosecond electrical excitation of a two-dimensional electron gas Proceedings of Spie - the International Society For Optical Engineering. 5352: 364-371. DOI: 10.1117/12.533181 |
0.574 |
|
2004 |
Wan A, Menon V, Forrest SR, Wasserman D, Lyon SA, Kahn A. Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge(100) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1893-1898. DOI: 10.1116/1.1774203 |
0.577 |
|
2004 |
Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Spin splitting in GaAs (100) two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 69: 1133111-1133114. DOI: 10.1103/Physrevb.69.113311 |
0.56 |
|
2004 |
Wasserman D, Lyon SA. Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs Applied Physics Letters. 85: 5352-5354. DOI: 10.1063/1.1827351 |
0.586 |
|
2004 |
Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Negative differential Rashba effect in two-dimensional hole systems Applied Physics Letters. 85: 3151-3153. DOI: 10.1063/1.1806543 |
0.578 |
|
2004 |
Hadjipanayi M, Maciel AC, Ryan JF, Wasserman D, Lyon SA. Scanning near-field photoluminescence mapping of (110) InAs-GaAs self-assembled quantum dots Applied Physics Letters. 85: 2535-2537. DOI: 10.1063/1.1800272 |
0.638 |
|
2003 |
Tyryshkin AM, Lyon SA, Astashkin AV, Raitsimring AM. Electron spin relaxation times of phosphorus donors in silicon Physical Review B - Condensed Matter and Materials Physics. 68: 1932071-1932074. DOI: 10.1103/Physrevb.68.193207 |
0.415 |
|
2003 |
Wasserman D, Lyon SA, Hadjipanayi M, Maciel A, Ryan JF. Formation of self-assembled InAs quantum dots on (110) GaAs substrates Applied Physics Letters. 83: 5050-5052. DOI: 10.1063/1.1633683 |
0.618 |
|
2003 |
Wilamowski Z, Jantsch W, Sandersfeld N, Mühlberger M, Schäffler F, Lyon S. Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 16: 111-120. DOI: 10.1016/S1386-9477(02)00582-9 |
0.491 |
|
2002 |
Shaner EA, Lyon SA. Time-resolved impulse response of the magnetoplasmon resonance in a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 66: 414021-414023. DOI: 10.1103/Physrevb.66.041402 |
0.599 |
|
2002 |
Papadakis SJ, De Poortere EP, Manoharan HC, Yau JB, Shayegan M, Lyon SA. Low-field magnetoresistance in GaAs two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 65: 2453121-2453127. DOI: 10.1103/Physrevb.65.245312 |
0.423 |
|
2002 |
Wasserman D, Lyon SA. Midinfrared luminescence from InAs quantum dots in unipolar devices Applied Physics Letters. 81: 2848-2850. DOI: 10.1063/1.1511537 |
0.634 |
|
2002 |
Xie Z, Lyon SA. 4-terminal reflection and transmission in an Aharonov-Bohm ring Physica E: Low-Dimensional Systems and Nanostructures. 12: 766-769. DOI: 10.1016/S1386-9477(01)00393-9 |
0.326 |
|
2001 |
Wasserman D, Lyon SA. Mid-infrared electroluminescence from InAs quantum dots in p-n junctions and unipolar tunneling structures Physica Status Solidi (B) Basic Research. 224: 585-590. DOI: 10.1002/1521-3951(200103)224:2<585::Aid-Pssb585>3.0.Co;2-3 |
0.613 |
|
2000 |
Shukla SP, Shayegan M, Parihar SR, Lyon SA, Cooper NR, Kiselev AA. Large skyrmions in anAl0.13Ga0.87Asquantum well Physical Review B. 61: 4469-4472. DOI: 10.1103/Physrevb.61.4469 |
0.432 |
|
2000 |
Hornmark ET, Lyon SA, Poindexter EH, Young CF. New features of electrically detected magnetic resonance in silicon p-n diodes Solid State Communications. 116: 279-282. DOI: 10.1016/S0038-1098(00)00317-3 |
0.318 |
|
1999 |
Xie Z, Lyon SA. Ballistic transport in p-type GaAs Applied Physics Letters. 75: 2085-2087. DOI: 10.1063/1.124924 |
0.338 |
|
1999 |
Berryman KW, Lyon SA, Segev M, Engholm JR. Optical saturation of mid-infrared transitions in self-assembled InAs quantum dots: Evidence for an LO phonon bottleneck Iqec, International Quantum Electronics Conference Proceedings. 16. |
0.37 |
|
1997 |
Berryman KW, Lyon SA, Segev M. Electronic structure and optical behavior of self-assembled InAs quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1045-1050. DOI: 10.1116/1.589390 |
0.487 |
|
1997 |
Papadakis SJ, Lu JP, Shayegan M, Parihar SR, Lyon SA. Interlayer Charge Transfer In Double-Quantum-Well Systems Physical Review B. 55: 9294-9297. DOI: 10.1103/Physrevb.55.9294 |
0.384 |
|
1997 |
Berryman KW, Lyon SA, Segev M. Mid-infrared photoconductivity in InAs quantum dots Applied Physics Letters. 70: 1861-1863. DOI: 10.1063/1.118714 |
0.461 |
|
1996 |
Kurdak C, Chen CJ, Tsui DC, Lu JP, Shayegan M, Parihar S, Lyon SA. Experimental investigation of the Pauli exclusion principle using noise in coherent electron transport Surface Science. 361: 705-708. DOI: 10.1016/0039-6028(96)00504-3 |
0.358 |
|
1996 |
Grayson M, Kurdak Ç, Tsui D, Parihar S, Lyon S, Shayegan M. Novel cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron systems Solid-State Electronics. 40: 233-236. DOI: 10.1016/0038-1101(95)00255-3 |
0.306 |
|
1995 |
Kurdak C, Tsui DC, Parihar S, Lyon SA, Shayegan M. Electron temperature in low-dimensional wires using thermal noise measurements Applied Physics Letters. 67: 386. DOI: 10.1063/1.114637 |
0.373 |
|
1994 |
Kane MG, Sun KW, Lyon SA. Ultrafast carrier-carrier scattering among photoexcited nonequilibrium carriers in GaAs Physical Review B. 50: 7428-7438. DOI: 10.1103/Physrevb.50.7428 |
0.344 |
|
1994 |
Kane MG, Sun KW, Lyon SA. Ultrafast dynamics of non-thermal carriers in GaAs Semiconductor Science and Technology. 9: 697-699. DOI: 10.1088/0268-1242/9/5S/079 |
0.333 |
|
1994 |
Ying X, Lu JP, Heremans JJ, Santos MB, Shayegan M, Lyon SA, Littman M, Gross P, Rabitz H. Quantum reflection and transmission of ballistic two-dimensional electrons by a potential barrier Applied Physics Letters. 65: 1154-1156. DOI: 10.1063/1.112126 |
0.433 |
|
1994 |
Kurdak C, Tsui DC, Parihar S, Santos MB, Manoharan HC, Lyon SA, Shayegan M. Surface resonant tunneling transistor: A new negative transconductance device Applied Physics Letters. 64: 610-612. DOI: 10.1063/1.111065 |
0.312 |
|
1993 |
Parihar SR, Lyon SA. Impurity levels in heterostructures for optical absorption and emission Applied Physics Letters. 63: 2396-2398. DOI: 10.1063/1.110486 |
0.382 |
|
1992 |
Hublitz K, Lyon SA. Light emission from hot carriers in Si MOSFETS Semiconductor Science and Technology. 7: B567-B569. DOI: 10.1088/0268-1242/7/3B/149 |
0.349 |
|
1992 |
Parihar SR, Lyon SA. Ellipsoidal valley donor binding energies in a quantum well Solid State Communications. 84: 885-888. DOI: 10.1016/0038-1098(92)90452-F |
0.378 |
|
1990 |
Petersen CL, Lyon SA. Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs. Physical Review Letters. 65: 760-763. PMID 10043012 DOI: 10.1103/Physrevlett.65.760 |
0.343 |
|
1990 |
Campbell IH, Fauchet PM, Lyon SA, Nemanich RJ. Photoluminescence above the Tauc gap in a-Si:H Physical Review B. 41: 9871-9879. DOI: 10.1103/Physrevb.41.9871 |
0.375 |
|
1990 |
Zrenner A, Worlock JM, Florez LT, Harbison JP, Lyon SA. Intrinsic bistability in an optically pumped quantum well structure Applied Physics Letters. 56: 1763-1765. DOI: 10.1063/1.103093 |
0.412 |
|
1990 |
Zrenner A, Worlock JM, Florez LT, Harbison JP, Lyon SA. Intrinsic bistability in an optically pumped asymmetric quantum well structure Superlattices and Microstructures. 7: 327-330. DOI: 10.1016/0749-6036(90)90219-W |
0.403 |
|
1990 |
Lyon SA. Long wavelength quantum well detectors: can they compete? Surface Science. 228: 508-513. DOI: 10.1016/0039-6028(90)90365-F |
0.448 |
|
1989 |
Kenkare PU, Lyon SA. Relationship between trapped holes, positive ions, and interface states in irradiated Si-SiO2 structures Applied Physics Letters. 55: 2328-2330. DOI: 10.1063/1.102358 |
0.326 |
|
1989 |
Parihar SR, Lyon SA, Santos M, Shayegan M. Voltage tunable quantum well infrared detector Applied Physics Letters. 55: 2417-2419. DOI: 10.1063/1.102032 |
0.441 |
|
1989 |
Lyon SA. Interface states generated by the injection of electrons and holes into SiO2 Applied Surface Science. 39: 552-564. DOI: 10.1016/0169-4332(89)90471-6 |
0.369 |
|
1989 |
Petersen CL, Frei MR, Lyon SA. Hot electron electroluminescence in AlGaAs/GaAs heterostructures Solid State Electronics. 32: 1919-1923. DOI: 10.1016/0038-1101(89)90336-5 |
0.41 |
|
1988 |
Lyon SA, Petersen CL. Cw spectroscopy of ultrafast relaxation in semiconductor heterostructures Proceedings of Spie - the International Society For Optical Engineering. 942: 264-268. DOI: 10.1117/12.947224 |
0.317 |
|
1988 |
Yang CH, Lyon SA, Tu CW. Photoluminescence from the two-dimensional electron gas at GaAs/AlGaAs single heterojunctions Applied Physics Letters. 53: 285-287. DOI: 10.1063/1.99915 |
0.418 |
|
1988 |
Wang SJ, Sung JM, Lyon SA. Relationship between hole trapping and interface state generation in metal-oxide-silicon structures Applied Physics Letters. 52: 1431-1433. DOI: 10.1063/1.99690 |
0.333 |
|
1988 |
Goossen KW, Lyon SA, Alavi K. Photovoltaic quantum well infrared detector Applied Physics Letters. 52: 1701-1703. DOI: 10.1063/1.99022 |
0.66 |
|
1988 |
Goossen KW, Lyon SA. Performance aspects of a quantum-well detector Journal of Applied Physics. 63: 5149-5153. DOI: 10.1063/1.340417 |
0.667 |
|
1988 |
Goossen KW, Lyon SA, Alavi K. Grating enhancement of quantum well detector response Applied Physics Letters. 53: 1027-1029. DOI: 10.1063/1.100054 |
0.631 |
|
1987 |
Goossen KW, Lyon SA, Alavi K. Conduction-band offset determination in GaAs-AlxGa1-xAs through measurement of infrared internal photoemission. Physical Review. B, Condensed Matter. 36: 9370-9373. PMID 9942823 DOI: 10.1103/Physrevb.36.9370 |
0.563 |
|
1987 |
Sung JM, Lyon SA. Cycling of defects between trapped negative charge and interface states at the Si-SiO2 interface Applied Physics Letters. 50: 1152-1154. DOI: 10.1063/1.97946 |
0.317 |
|
1987 |
Yang CH, Lyon SA, Tu CW. Photoluminescence from two dimensional electrons at single heterojunctions Superlattices and Microstructures. 3: 269-271. DOI: 10.1016/0749-6036(87)90070-X |
0.456 |
|
1987 |
Lyon SA. Thermalization of hot carriers in quantum wells Superlattices and Microstructures. 3: 261-267. DOI: 10.1016/0749-6036(87)90069-3 |
0.507 |
|
1986 |
Lyon SA. Hot Electron Relaxation in Quantum Wells Mrs Proceedings. 77. DOI: 10.1557/Proc-77-123 |
0.528 |
|
1986 |
Kolodzey J, Aljishi S, Schwarz R, Shen DS, Quinlan S, Lyon SA, Wagner S. ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES Materials Research Society Symposia Proceedings. 70: 429-434. DOI: 10.1557/Proc-70-429 |
0.325 |
|
1986 |
Chang ST, Wu JK, Lyon SA. Amphoteric defects at the Si-SiO2 interface Applied Physics Letters. 48: 662-664. DOI: 10.1063/1.96736 |
0.332 |
|
1986 |
Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6 |
0.308 |
|
1986 |
Lyon SA. Spectroscopy of hot carriers in semiconductors Journal of Luminescence. 35: 121-154. DOI: 10.1016/0022-2313(86)90066-9 |
0.459 |
|
1985 |
Yang CH, Carlson-Swindle JM, Lyon SA, Worlock JM. Hot-electron relaxation in GaAs quantum wells Physical Review Letters. 55: 2359-2361. DOI: 10.1103/Physrevlett.55.2359 |
0.422 |
|
1985 |
Goossen KW, Lyon SA. Grating enhanced quantum well detector Applied Physics Letters. 47: 1257-1259. DOI: 10.1063/1.96434 |
0.666 |
|
1985 |
Yang CH, Lyon SA. Dynamical screening of the electron-optical phonon interaction in two dimensions Physica B+C. 134: 309-313. DOI: 10.1016/0378-4363(85)90361-4 |
0.383 |
|
1985 |
Yang CH, Lyon SA. Thermalization of hot electrons in quantum wells Physica B+C. 134: 305-308. DOI: 10.1016/0378-4363(85)90360-2 |
0.465 |
|
1984 |
Chang ST, Johnson NM, Lyon SA. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon Applied Physics Letters. 44: 316-318. DOI: 10.1063/1.94737 |
0.362 |
|
1983 |
Wu JK, Lyon SA, Johnson WC. Temperature and field dependence of the generation of interface states in the Si-SiO2 system after high-field stress Applied Physics Letters. 42: 585-587. DOI: 10.1063/1.94010 |
0.324 |
|
1982 |
Sunaga T, Lyon SA, Johnson WC. Interface-state generation during avalanche injection of electrons from Si into SiO2 Applied Physics Letters. 40: 810-811. DOI: 10.1063/1.93268 |
0.342 |
|
1982 |
Pang S, Lyon SA, Johnson WC. Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate Applied Physics Letters. 40: 709-711. DOI: 10.1063/1.93243 |
0.348 |
|
1979 |
Hunter AT, Lyon SA, Smith DL, McGill TC. Transient decay of satellite lines of bound excitons in Si: P Physical Review B. 20: 2431-2437. DOI: 10.1103/Physrevb.20.2431 |
0.45 |
|
1979 |
Elliott KR, Lyon SA, Smith DL, McGill TC. Evidence for an excited level of the neutral indium acceptor in silicon Physics Letters A. 70: 52-54. DOI: 10.1016/0375-9601(79)90325-6 |
0.426 |
|
1979 |
Mitchard GS, Lyon SA, Elliott KR, McGill TC. Observation of long lifetime lines in photoluminescence from Si: In Solid State Communications. 29: 425-429. DOI: 10.1016/0038-1098(79)91209-2 |
0.446 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Thermodynamic determination of work functions of bound multiexciton complexes Physical Review Letters. 41: 56-60. DOI: 10.1103/Physrevlett.41.56 |
0.506 |
|
1978 |
Chen M, Lyon SA, Smith DL, McGill TC. Transients of the photoluminescence intensities of the electron-hole droplets in pure and doped Ge Physical Review B. 17: 4744-4756. DOI: 10.1103/Physrevb.17.4744 |
0.477 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes Physical Review B. 17: 2620-2624. DOI: 10.1103/Physrevb.17.2620 |
0.472 |
|
1978 |
Osbourn GC, Lyon SA, Elliott KR, Smith DL, McGill TC. Auger and radiative recombination of acceptor bound excitons in semiconductors Solid State Electronics. 21: 1339-1342. DOI: 10.1016/0038-1101(78)90203-4 |
0.47 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Luminescence of bound exciton and bound multiexciton complexes in Si:Li Solid State Communications. 28: 317-320. DOI: 10.1016/0038-1098(78)90432-5 |
0.451 |
|
1978 |
Lyon SA, Osbourn GC, Smith DL, McGill TC. BOUND EXCITON LIFETIMES FOR ACCEPTORS IN Si Solid State Communications. 425-428. DOI: 10.1016/0038-1098(77)91000-6 |
0.463 |
|
1977 |
Chen M, Lyon SA, Elliott KR, Smith DL, McGill TC. Transients of the photoluminescence from EHD in doped and undoped Ge Il Nuovo Cimento B Series 11. 39: 622-627. DOI: 10.1007/Bf02725801 |
0.432 |
|
Low-probability matches (unlikely to be authored by this person) |
1983 |
Lyon SA, Chen YH, Lin JF, Worlock JM. Optical transmission at 3.39 μm during pulsed laser annealing of silicon Applied Physics Letters. 42: 978-980. DOI: 10.1063/1.93821 |
0.3 |
|
2019 |
Ross P, Rose BC, Lo CC, Thewalt ML, Tyryshkin AM, Lyon SA, Morton JJ. Electron Spin Resonance of P Donors in Isotopically Purified
Si
Detected by Contactless Photoconductivity Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.054014 |
0.298 |
|
1989 |
Fauchet PM, Campbell IH, Lyon SA, Nemanich RJ. Luminescence above the Tauc gap in a-Si:H Journal of Non-Crystalline Solids. 114: 277-279. DOI: 10.1016/0022-3093(89)90136-1 |
0.297 |
|
1997 |
Petrov MV, Lyon SA. Ballistic electron luminescence studies of superlattice minibands Applied Physics Letters. 70: 3263-3265. |
0.289 |
|
2007 |
Malissa H, Jantsch W, Chen G, Lichtenberger H, Fromherz T, Schäffler F, Bauer G, Tyryshkin A, Lyon S, Wilamowski Z. Spin relaxation in SiGe islands Aip Conference Proceedings. 893: 1317-1318. DOI: 10.1063/1.2730387 |
0.289 |
|
1989 |
Petersen CL, Frei MR, Lyon SA. Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes Physical Review Letters. 63: 2849-2852. DOI: 10.1103/PhysRevLett.63.2849 |
0.286 |
|
2005 |
Austin MD, Zhang W, Ge H, Wasserman D, Lyon SA, Chou SY. 6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography Nanotechnology. 16: 1058-1061. DOI: 10.1088/0957-4484/16/8/010 |
0.285 |
|
2004 |
Lai K, Pan W, Tsui DC, Lyon S, Mühlberger M, Schäffler F. Two-flux composite fermion series of the fractional quantum Hall states in strained Si. Physical Review Letters. 93: 156805. PMID 15524923 DOI: 10.1103/PhysRevLett.93.156805 |
0.282 |
|
1981 |
Schafer SA, Lyon SA. OPTICALLY ENHANCED OXIDATION OF SEMICONDUCTORS Journal of Vacuum Science & Technology. 19: 494-497. DOI: 10.1116/1.571045 |
0.282 |
|
1989 |
Petersen CL, Frei MR, Lyon SA. Electroluminescence of ballistically injected electrons in AlGaAs/GaAs heterodiodes. Physical Review Letters. 63: 2849-2852. PMID 10041009 DOI: 10.1103/Physrevlett.63.2849 |
0.281 |
|
1996 |
Petrov MV, Parihar SR, Lyon SA. Tunneling properties of AlxGa1-xAs and AlAs barriers studied by ballistic electron luminescence spectroscopy Physical Review B - Condensed Matter and Materials Physics. 54: 13868-13877. |
0.28 |
|
1994 |
Gross P, Ramakrishna V, Vilallonga E, Rabitz H, Littman M, Lyon SA, Shayegan M. Optimally designed potentials for control of electron-wave scattering in semiconductor nanodevices. Physical Review. B, Condensed Matter. 49: 11100-11110. PMID 10009958 DOI: 10.1103/Physrevb.49.11100 |
0.273 |
|
2016 |
Pica G, Lovett BW, Bhatt RN, Schenkel T, Lyon SA. Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.035306 |
0.271 |
|
1983 |
Lyon SA, Nemanich RJ. Raman scattering from hydrogenated amorphous silicon Physica B+C. 117: 871-873. DOI: 10.1016/0378-4363(83)90679-4 |
0.27 |
|
2020 |
Zhang ZH, Stevenson P, Thiering G, Rose BC, Huang D, Edmonds AM, Markham ML, Lyon SA, Gali A, de Leon NP. Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States. Physical Review Letters. 125: 237402. PMID 33337180 DOI: 10.1103/PhysRevLett.125.237402 |
0.262 |
|
1984 |
Chen YH, Lyon SA. REFLECTIVITY OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING Materials Research Society Symposia Proceedings. 23: 173-177. DOI: 10.1557/Proc-23-173 |
0.26 |
|
1990 |
Petersen CL, Lyon SA. Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAs Physical Review Letters. 65: 760-763. DOI: 10.1103/PhysRevLett.65.760 |
0.258 |
|
1990 |
Watanabe Y, Wang ZZ, Lyon SA, Ong NP, Tsui DC, Tarascon JM, Wang E. Mid-infrared reflectivity of single crystal Nd2-xCexCu4O4-y Solid State Communications. 74: 757-761. DOI: 10.1016/0038-1098(90)90930-A |
0.255 |
|
2023 |
McLellan RA, Dutta A, Zhou C, Jia Y, Weiland C, Gui X, Place APM, Crowley KD, Le XH, Madhavan T, Gang Y, Baker L, Head AR, Waluyo I, Li R, ... ... Lyon SA, et al. Chemical Profiles of the Oxides on Tantalum in State of the Art Superconducting Circuits. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2300921. PMID 37166044 DOI: 10.1002/advs.202300921 |
0.254 |
|
2004 |
Austin MD, Ge H, Wu W, Li M, Yu Z, Wasserman D, Lyon SA, Chou SY. Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography Applied Physics Letters. 84: 5299-5301. DOI: 10.1063/1.1766071 |
0.252 |
|
1997 |
Papadakis SJ, Lu JP, Shayegan M, Parihar SR, Lyon SA. Interlayer charge transfer in double-quantum-well systems Physical Review B - Condensed Matter and Materials Physics. 55: 9294-9297. |
0.249 |
|
1992 |
Lyon SA, Petersen CL. Ballistic electron luminescence spectroscopy Semiconductor Science and Technology. 7: B21-B25. DOI: 10.1088/0268-1242/7/3B/005 |
0.245 |
|
1997 |
Kurdak Ç, Chen C, Tsui DC, Parihar S, Lyon S, Weimann GW. Resistance fluctuations inGaAs/AlxGa1−xAsquantum point contact and Hall bar structures Physical Review B. 56: 9813-9818. DOI: 10.1103/Physrevb.56.9813 |
0.243 |
|
2006 |
Lai K, Pan W, Tsui DC, Lyon SA, Mühlberger M, Schäffler F. Metal-insulator transition of 2D electrons in a modulation doped Si/Si 1-xGex heterostructure Aip Conference Proceedings. 850: 1448-1449. DOI: 10.1063/1.2355247 |
0.235 |
|
2015 |
Sigillito AJ, Tyryshkin AM, Lyon SA. Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in silicon Physical Review Letters. 114. DOI: 10.1103/PhysRevLett.114.217601 |
0.232 |
|
1989 |
Watanabe Y, Wang ZZ, Lyon SA, Tsui DC, Ong NP, Tarascon JM, Barboux P. Mid-infrared reflectivity and ellipsometry measurements on single-crystal YBa2Cu3O7 and Bi2Sr2CuO6+y. Physical Review. B, Condensed Matter. 40: 6884-6889. PMID 9991065 DOI: 10.1103/Physrevb.40.6884 |
0.228 |
|
2019 |
Phenicie C, Stevenson P, Welinski S, Rose B, Asfaw A, Cava RJ, Lyon SA, de Leon NP, Thompson J. Narrow optical linewidths in erbium implanted in TiO2. Nano Letters. PMID 31765161 DOI: 10.1021/Acs.Nanolett.9B03831 |
0.223 |
|
2014 |
Pica G, Wolfowicz G, Urdampilleta M, Thewalt MLW, Riemann H, Abrosimov NV, Becker P, Pohl HJ, Morton JJL, Bhatt RN, Lyon SA, Lovett BW. Hyperfine Stark effect of shallow donors in silicon Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195204 |
0.22 |
|
1986 |
Chang ST, Lyon SA. LOCATION OF POSITIVE CHARGE TRAPPED NEAR THE Si-SiO//2 INTERFACE AT LOW TEMPERATURE Applied Physics Letters. 48: 136-138. |
0.22 |
|
2018 |
Kleinbaum EI, Lyon SA. Thermopower-Based Hot Electron Thermometry of Helium Surface States at 1.6 K. Physical Review Letters. 121: 236801. PMID 30576163 DOI: 10.1103/PhysRevLett.121.236801 |
0.217 |
|
1987 |
Wang SJ, Sung JM, Lyon SA. RELATIONSHIP BETWEEN THE LOCATION OF TRAPPED HOLES AND INTERFACE STATE GENERATION IN THE Si-SiO//2 SYSTEM Technical Digest - International Electron Devices Meeting. 905-908. |
0.217 |
|
1990 |
Lyon SA. Generation of interface states at the Si-SiO2 interface Proceedings - the Electrochemical Society. 90: 342-348. |
0.216 |
|
2008 |
Yang A, Steger M, Lian HJ, Thewalt MLW, Uemura M, Sagara A, Itoh KM, Haller EE, Ager JW, Lyon SA, Konuma M, Cardona M. High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.113203 |
0.215 |
|
1994 |
Sun KW, Lyon SA. Dynamics of nonthermal-carrier distributions in gaas generated by femtosecond laser pulses Epl. 26: 123-128. DOI: 10.1209/0295-5075/26/2/008 |
0.213 |
|
2014 |
Pica G, Lovett BW, Bhatt RN, Lyon SA. Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.235306 |
0.21 |
|
1994 |
Gross P, Ramakrishna V, Vilallonga E, Rabitz H, Littman M, Lyon SA, Shayegan M. Optimally designed potentials for control of electron-wave scattering in semiconductor nanodevices Physical Review B. 49: 11100-11110. DOI: 10.1103/PhysRevB.49.11100 |
0.21 |
|
2019 |
Hazard TM, Gyenis A, Di Paolo A, Asfaw AT, Lyon SA, Blais A, Houck AA. Nanowire Superinductance Fluxonium Qubit. Physical Review Letters. 122: 010504. PMID 31012689 DOI: 10.1103/Physrevlett.122.010504 |
0.209 |
|
1987 |
Goossen KW, Lyon SA, Alavi K. Conduction-band offset determination in GaAs-AlxGa1-xAs through measurement of infrared internal photoemission Physical Review B. 36: 9370-9373. DOI: 10.1103/PhysRevB.36.9370 |
0.208 |
|
1993 |
Xiao X, Sturm JC, Parihar SR, Lyon SA, Meyerhofer D, Palfrey S, Shallcross FV. Silicide/Strained Si1-xGex Schottky-Barrier Infrared Detectors Ieee Electron Device Letters. 14: 199-201. DOI: 10.1109/55.215151 |
0.206 |
|
2020 |
Chen B, Aredo B, Ding Y, Zhong X, Zhu Y, Zhao CX, Kumar A, Xing C, Gautron L, Lyon S, Russell J, Li X, Tang M, Anderton P, Ludwig S, et al. Forward genetic analysis using OCT screening identifies mutations leading to progressive outer retinal degeneration in mice. Proceedings of the National Academy of Sciences of the United States of America. PMID 32457148 DOI: 10.1073/Pnas.1921224117 |
0.203 |
|
2000 |
Shukla SP, Shayegan M, Parihar SR, Lyon SA, Cooper NR, Kiselev AA. Large skyrmions in an Al0.13Ga0.87As quantum well Physical Review B - Condensed Matter and Materials Physics. 61: 4469-4472. |
0.201 |
|
2018 |
Asfaw AT, Kleinbaum EI, Hazard TM, Gyenis A, Houck AA, Lyon SA. SKIFFS: Superconducting Kinetic Inductance Field-Frequency Sensors for sensitive magnetometry in moderate background magnetic fields Applied Physics Letters. 113: 172601. DOI: 10.1063/1.5049615 |
0.2 |
|
2012 |
Arnold CN, Barnes MJ, Berger M, Blasius AL, Brandl K, Croker B, Crozat K, Du X, Eidenschenk C, Georgel P, Hoebe K, Huang H, Jiang Z, Krebs P, La Vine D, ... ... Lyon S, et al. ENU-induced phenovariance in mice: inferences from 587 mutations. Bmc Research Notes. 5: 577. PMID 23095377 DOI: 10.1186/1756-0500-5-577 |
0.194 |
|
2015 |
Miosge LA, Field MA, Sontani Y, Cho V, Johnson S, Palkova A, Balakishnan B, Liang R, Zhang Y, Lyon S, Beutler B, Whittle B, Bertram EM, Enders A, Goodnow CC, et al. Comparison of predicted and actual consequences of missense mutations. Proceedings of the National Academy of Sciences of the United States of America. 112: E5189-98. PMID 26269570 DOI: 10.1073/Pnas.1511585112 |
0.191 |
|
2015 |
Wang T, Zhan X, Bu CH, Lyon S, Pratt D, Hildebrand S, Choi JH, Zhang Z, Zeng M, Wang KW, Turer E, Chen Z, Zhang D, Yue T, Wang Y, et al. Real-time resolution of point mutations that cause phenovariance in mice. Proceedings of the National Academy of Sciences of the United States of America. 112: E440-9. PMID 25605905 DOI: 10.1073/Pnas.1423216112 |
0.19 |
|
2018 |
Wang T, Bu CH, Hildebrand S, Jia G, Siggs OM, Lyon S, Pratt D, Scott L, Russell J, Ludwig S, Murray AR, Moresco EMY, Beutler B. Probability of phenotypically detectable protein damage by ENU-induced mutations in the Mutagenetix database. Nature Communications. 9: 441. PMID 29382827 DOI: 10.1038/S41467-017-02806-4 |
0.184 |
|
2015 |
Shi H, Wang Y, Li X, Zhan X, Tang M, Fina M, Su L, Pratt D, Bu CH, Hildebrand S, Lyon S, Scott L, Quan J, Sun Q, Russell J, et al. NLRP3 activation and mitosis are mutually exclusive events coordinated by NEK7, a new inflammasome component. Nature Immunology. PMID 26642356 DOI: 10.1038/Ni.3333 |
0.184 |
|
1993 |
Kurdak C, Tsui DC, Parihar S, Manoharan H, Lyon SA, Shayegan M. New resonant tunneling transistor fabricated by cleaved edge overgrowth Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 265-269. |
0.176 |
|
1989 |
Kenkare PU, Lyon SA. IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures Ieee Transactions On Electron Devices. 36: 2603-2604. DOI: 10.1109/16.43700 |
0.148 |
|
1989 |
Chen YH, Lyon SA. Photoluminescence and Diffusivity of Free Excitons in Doped Silicon Ieee Journal of Quantum Electronics. 25: 1053-1055. DOI: 10.1109/3.27999 |
0.143 |
|
1989 |
Watanabe Y, Wang ZZ, Lyon SA, Tsui DC, Ong NP, Tarascon JM, Barboux P. Mid-infrared reflectivity and ellipsometry measurements on single-crystal YBa2Cu3O7 and Bi2Sr2CuO6+y Physical Review B. 40: 6884-6889. DOI: 10.1103/PhysRevB.40.6884 |
0.126 |
|
1983 |
Lyon SA, Worlock JM. Role of electromagnetic resonances in the surface-enhanced raman effect Physical Review Letters. 51: 593-596. DOI: 10.1103/PhysRevLett.51.593 |
0.126 |
|
1985 |
Schafer SA, Lyon SA. New model of the rapid initial oxidation of silicon Applied Physics Letters. 47: 154-156. DOI: 10.1063/1.96246 |
0.122 |
|
1982 |
Lyon SA, Nemanich RJ, Johnson NM, Biegelsen DK. Microstrain in laser-crystallized silicon islands on fused silica Applied Physics Letters. 40: 316-318. DOI: 10.1063/1.93075 |
0.109 |
|
1982 |
SCHAFER SA, LYON SA. WAVELENGTH DEPENDENCE OF LASER-ENHANCED OXIDATION OF SILICON J Vac Sci Technol. 422-425. |
0.094 |
|
1984 |
Chang ST, Johnson NM, Lyon SA. IIIB-6 Analysis of Current Transport and Charge Trapping in Ultrathin Nitrided Oxide MIS Capacitors Ieee Transactions On Electron Devices. 31: 1972. DOI: 10.1109/T-ED.1984.21854 |
0.088 |
|
1988 |
Schafer SA, Lyon SA. Reply to "Comment on A new model of the rapid initial oxidation of silicon'" Journal of Applied Physics. 64: 1610-1611. DOI: 10.1063/1.341802 |
0.066 |
|
2019 |
Molazadeh M, Ahmadzadeh H, Pourianfar HR, Lyon S, Rampelotto PH. The Use of Microalgae for Coupling Wastewater Treatment With CO Biofixation. Frontiers in Bioengineering and Biotechnology. 7: 42. PMID 30941348 DOI: 10.3389/fbioe.2019.00042 |
0.051 |
|
2008 |
Saunders B, Lyon S, Day M, Riley B, Chenette E, Subramaniam S, Vadivelu I. The Molecule Pages database. Nucleic Acids Research. 36: D700-6. PMID 17965093 DOI: 10.1093/Nar/Gkm907 |
0.043 |
|
1963 |
Keith TA, Lyon SA. Hemophilus aphrophilus endocarditis The American Journal of Medicine. 34: 535-540. PMID 14031715 |
0.042 |
|
2007 |
Zavzavadjian JR, Couture S, Park WS, Whalen J, Lyon S, Lee G, Fung E, Mi Q, Liu J, Wall E, Santat L, Dhandapani K, Kivork C, Driver A, Zhu X, et al. The alliance for cellular signaling plasmid collection: a flexible resource for protein localization studies and signaling pathway analysis. Molecular & Cellular Proteomics : McP. 6: 413-24. PMID 17192258 DOI: 10.1074/Mcp.M600437-Mcp200 |
0.038 |
|
2021 |
Rios JJ, Denton K, Russell J, Kozlitina J, Ferreira CR, Lewanda AF, Mayfield JE, Moresco E, Ludwig S, Tang M, Li X, Lyon S, Khanshour A, Paria N, Khalid A, et al. Germline saturation mutagenesis induces skeletal phenotypes in mice. Journal of Bone and Mineral Research : the Official Journal of the American Society For Bone and Mineral Research. PMID 33905568 DOI: 10.1002/jbmr.4323 |
0.036 |
|
2008 |
Deng X, Carney M, Hinton DE, Lyon S, Woodside G, Duong CN, Kim SD, Schlenk D. Biomonitoring recycled water in the Santa Ana River Basin in southern California. Journal of Toxicology and Environmental Health. Part A. 71: 109-18. PMID 18080901 DOI: 10.1080/15287390701613017 |
0.029 |
|
2021 |
Xu D, Lyon S, Bu CH, Hildebrand S, Choi JH, Zhong X, Liu A, Turer EE, Zhang Z, Russell J, Ludwig S, Mahrt E, Nair-Gill E, Shi H, Wang Y, et al. Thousands of induced germline mutations affecting immune cells identified by automated meiotic mapping coupled with machine learning. Proceedings of the National Academy of Sciences of the United States of America. 118. PMID 34260399 DOI: 10.1073/pnas.2106786118 |
0.028 |
|
2021 |
Foray AP, Candon S, Hildebrand S, Marquet C, Valette F, Pecquet C, Lemoine S, Langa-Vives F, Dumas M, Hu P, Santamaria P, You S, Lyon S, Scott L, Bu CH, et al. De novo germline mutation in the dual specificity phosphatase 10 gene accelerates autoimmune diabetes. Proceedings of the National Academy of Sciences of the United States of America. 118. PMID 34782469 DOI: 10.1073/pnas.2112032118 |
0.026 |
|
2007 |
Lyon SA, Fletcher DL, Berrang ME. Germicidal ultraviolet light to lower numbers of Listeria monocytogenes on broiler breast fillets Poultry Science. 86: 964-967. PMID 17435033 |
0.026 |
|
2022 |
Zhang Z, Jiang Y, Su L, Ludwig S, Zhang X, Tang M, Li X, Anderton P, Zhan X, Choi M, Russell J, Bu CH, Lyon S, Xu D, Hildebrand S, et al. Obesity caused by an OVOL2 mutation reveals dual roles of OVOL2 in promoting thermogenesis and limiting white adipogenesis. Cell Metabolism. PMID 36228616 DOI: 10.1016/j.cmet.2022.09.018 |
0.022 |
|
2016 |
Thitaram SN, Frank JF, Siragusa GR, Bailey JS, Dargatz DA, Lombard JE, Haley CA, Lyon SA, Fedorka-Cray PJ. Antimicrobial susceptibility of Clostridium difficile isolated from food animals on farms. International Journal of Food Microbiology. 227: 1-5. PMID 27043382 DOI: 10.1016/j.ijfoodmicro.2016.03.017 |
0.02 |
|
2004 |
Zhang P, Sadler CM, Lyon SA, Martonosi M. Hardware design experiences in ZebraNet Sensys'04 - Proceedings of the Second International Conference On Embedded Networked Sensor Systems. 227-238. |
0.019 |
|
2011 |
Thitaram SN, Frank JF, Lyon SA, Siragusa GR, Bailey JS, Lombard JE, Haley CA, Wagner BA, Dargatz DA, Fedorka-Cray PJ. Clostridium difficile from healthy food animals: optimized isolation and prevalence. Journal of Food Protection. 74: 130-3. PMID 21219775 DOI: 10.4315/0362-028X.JFP-10-229 |
0.015 |
|
2008 |
Lyon SA, Berrang ME, Fedorka-Cray PJ, Fletcher DL, Meinersmann RJ. Antimicrobial resistance of Listeria monocytogenes isolated from a poultry further processing plant Foodborne Pathogens and Disease. 5: 253-259. PMID 18564907 DOI: 10.1089/fpd.2007.0070 |
0.014 |
|
2020 |
Prinz N, Story R, Lyon S, Ferse SCA, Bejarano S. To Feed or Not to Feed? Coral Reef Fish Responses to Artificial Feeding and Stakeholder Perceptions in the Aitutaki Lagoon, Cook Islands Frontiers in Marine Science. 7. DOI: 10.3389/fmars.2020.00145 |
0.01 |
|
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