| Year |
Citation |
Score |
| 2012 |
Takita M, Bradbury FR, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Spatial distribution of electrons on a superfluid helium charge-coupled device Journal of Physics: Conference Series. 400. DOI: 10.1088/1742-6596/400/4/042059 |
0.611 |
|
| 2012 |
Lo CC, Bradbury FR, Tyryshkin AM, Weis CD, Bokor J, Schenkel T, Lyon SA. Suppression of microwave rectification effects in electrically detected magnetic resonance measurements Applied Physics Letters. 100. DOI: 10.1063/1.3684247 |
0.551 |
|
| 2011 |
Bradbury FR, Takita M, Gurrieri TM, Wilkel KJ, Eng K, Carroll MS, Lyon SA. Efficient clocked electron transfer on superfluid helium. Physical Review Letters. 107: 266803. PMID 22243176 DOI: 10.1103/Physrevlett.107.266803 |
0.616 |
|
| 2008 |
Sabouret G, Bradbury FR, Shankar S, Bert JA, Lyon SA. Signal and charge transfer efficiency of few electrons clocked on microscopic superfluid helium channels Applied Physics Letters. 92. DOI: 10.1063/1.2884693 |
0.663 |
|
| 2007 |
Rahman R, Wellard CJ, Bradbury FR, Prada M, Cole JH, Klimeck G, Hollenberg LC. High precision quantum control of single donor spins in silicon. Physical Review Letters. 99: 036403. PMID 17678301 DOI: 10.1103/Physrevlett.99.036403 |
0.358 |
|
| 2006 |
Bradbury FR, Tyryshkin AM, Sabouret G, Bokor J, Schenkel T, Lyon SA. Stark tuning of donor electron spins in silicon. Physical Review Letters. 97: 176404. PMID 17155489 DOI: 10.1103/Physrevlett.97.176404 |
0.609 |
|
| 2004 |
Jo J, Heremans JJ, Bradbury F, Chen H, Soghomonian V. Gate tunable electron injection in submicron pentacene transistors Nanotechnology. 15: 1023-1026. DOI: 10.1088/0957-4484/15/8/028 |
0.496 |
|
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