Steven Denbaars - Publications

Affiliations: 
Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

210 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Anderson R, Cohen D, Mehari S, Nakamura S, DenBaars S. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. Optics Express. 27: 22764-22769. PMID 31510562 DOI: 10.1364/OE.27.022764  0.68
2019 Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/OE.27.0A1074  0.68
2019 Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/OE.27.024717  0.68
2019 Li H, Wong MS, Khoury M, Bonef B, Zhang H, Chow Y, Li P, Kearns J, Taylor AA, De Mierry P, Hassan Z, Nakamura S, DenBaars SP. Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template. Optics Express. 27: 24154-24160. PMID 31510309 DOI: 10.1364/OE.27.024154  0.68
2019 Kearns JA, Back J, Cohen DA, DenBaars SP, Nakamura S. Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers. Optics Express. 27: 23707-23713. PMID 31510271 DOI: 10.1364/OE.27.023707  0.68
2019 Zhang H, Cohen DA, Chan P, Wong MS, Mehari S, Becerra DL, Nakamura S, DenBaars SP. Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating. Optics Letters. 44: 3106-3109. PMID 31199392 DOI: 10.1364/OL.44.003106  0.68
2019 Hamdy KW, Young EC, Alhassan AI, Becerra DL, DenBaars SP, Speck JS, Nakamura S. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27: 8327-8334. PMID 31052652 DOI: 10.1364/OE.27.008327  0.68
2018 Wong MS, Hwang D, Alhassan AI, Lee C, Ley R, Nakamura S, DenBaars SP. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Optics Express. 26: 21324-21331. PMID 30119435  0.68
2018 Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, Speck JS, DenBaars SP. Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express. 26: 12490-12498. PMID 29801286  0.68
2018 Shen C, Ng TK, Lee C, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. Optics Express. 26: A219-A226. PMID 29609284  0.68
2018 Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761  0.68
2018 Mehari S, Cohen DA, Becerra DL, Nakamura S, DenBaars SP. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. Optics Express. 26: 1564-1572. PMID 29402030  0.68
2018 Cozzan C, Lheureux G, O'Dea N, Levin EE, Graser J, Sparks TD, Nakamura S, DenBaars SP, Weisbuch C, Seshadri R. Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting. Acs Applied Materials & Interfaces. PMID 29400946 DOI: 10.1021/acsami.8b00074  0.68
2017 Kuritzky LY, Espenlaub AC, Yonkee BP, Pynn CD, DenBaars SP, Nakamura S, Weisbuch C, Speck JS. High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. Optics Express. 25: 30696-30707. PMID 29221097  0.68
2017 Li H, Khoury M, Bonef B, Alhassan AI, Mughal AJ, Azimah E, Samsudin MEA, De Mierry P, Nakamura S, Speck J, DenBaars SP. Efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes on low defect density (11-22) GaN/sapphire templates. Acs Applied Materials & Interfaces. PMID 28960058 DOI: 10.1021/acsami.7b11718  0.68
2017 Lee C, Shen C, Cozzan C, Farrell RM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. Optics Express. 25: 17480-17487. PMID 28789239  0.68
2017 Myzaferi A, Reading AH, Farrell RM, Cohen DA, Nakamura S, DenBaars SP. Semipolar III-nitride laser diodes with zinc oxide cladding. Optics Express. 25: 16922-16930. PMID 28789192  0.68
2017 Kowsz SJ, Young EC, Yonkee BP, Pynn CD, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. Optics Express. 25: 3841-3849. PMID 28241595  0.68
2016 Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, Speck JS, DenBaars S. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express. 24: 22875-22880. PMID 27828354  0.68
2016 Shen C, Lee C, Ng TK, Nakamura S, Speck JS, DenBaars SP, Alyamani AY, El-Desouki MM, Ooi BS. High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. Optics Express. 24: 20281-20286. PMID 27607634  0.68
2016 Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754  0.68
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Nakamura S, DenBaars SP, Speck JS, Alyamani AY, El-Desouki MM, Ooi BS. High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. Optics Letters. 41: 2608-2611. PMID 27244426  0.68
2016 Yonkee BP, Young EC, Lee C, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Optics Express. 24: 7816-7822. PMID 27137064 DOI: 10.1364/OE.24.007816  0.68
2016 Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/OE.24.00A215  0.68
2016 Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/JJAP.55.021501  0.32
2016 Yonkee BP, SaifAddin B, Leonard JT, DenBaars SP, Nakamura S. Flip-chip blue LEDs grown on {2021} bulk GaN substrates utilizing photoelectrochemical etching for substrate removal Applied Physics Express. 9. DOI: 10.7567/APEX.9.056502  0.68
2016 Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, Nakamura S, Speck JS. Hybrid tunnel junction contacts to III-nitride light-emitting diodes Applied Physics Express. 9. DOI: 10.7567/APEX.9.022102  0.32
2016 Mensi MD, Becerra DL, Ivanov R, Marcinkevičius S, Nakamura S, Denbaars SP, Speck JS. Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells Optical Materials Express. 6: 39-45. DOI: 10.1364/OME.6.000039  0.32
2016 Becerra DL, Kuritzky LY, Nedy J, Saud Abbas A, Pourhashemi A, Farrell RM, Cohen DA, DenBaars SP, Speck JS, Nakamura S. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes with chemically assisted ion beam etched facets Applied Physics Letters. 108. DOI: 10.1063/1.4943143  0.32
2016 Young NG, Farrell RM, Oh S, Cantore M, Wu F, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes Applied Physics Letters. 108. DOI: 10.1063/1.4941815  0.32
2016 Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531  0.32
2016 Leonard JT, Yonkee BP, Cohen DA, Megalini L, Lee S, Speck JS, Denbaars SP, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture Applied Physics Letters. 108. DOI: 10.1063/1.4940380  0.32
2016 Mughal AJ, Oh S, Myzaferi A, Nakamura S, Speck JS, DenBaars SP. High-power LEDs using Ga-doped ZnO current-spreading layers Electronics Letters. 52: 304-306. DOI: 10.1049/el.2015.3982  0.32
2016 Shen C, Ng TK, Leonard JT, Pourhashemi A, Oubei HM, Alias MS, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. High-Modulation-Efficiency, Integrated Waveguide Modulator-Laser Diode at 448 nm Acs Photonics. 3: 262-268. DOI: 10.1021/acsphotonics.5b00599  0.32
2016 Megalini L, Shenoy R, Rose K, Speck JP, Bowers JE, Nakamura S, Cohen DA, Denbaars SP. Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/pssa.201532540  0.32
2015 Lee C, Shen C, Oubei HM, Cantore M, Janjua B, Ng TK, Farrell RM, El-Desouki MM, Speck JS, Nakamura S, Ooi BS, DenBaars SP. 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. Optics Express. 23: 29779-87. PMID 26698461 DOI: 10.1364/OE.23.029779  0.68
2015 Chi YC, Hsieh DH, Lin CY, Chen HY, Huang CY, He JH, Ooi B, DenBaars SP, Nakamura S, Kuo HC, Lin GR. Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication. Scientific Reports. 5: 18690. PMID 26687289 DOI: 10.1038/srep18690  0.68
2015 Lee C, Zhang C, Cantore M, Farrell RM, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. Optics Express. 23: 16232-7. PMID 26193595  0.68
2015 Estrin Y, Rich DH, Keller S, DenBaars SP. Observations of exciton-surface plasmon polariton coupling and exciton-phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 265802. PMID 26076324 DOI: 10.1088/0953-8984/27/26/265802  0.68
2015 Megalini L, Kuritzky LY, Leonard JT, Shenoy R, Rose K, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions Applied Physics Express. 8. DOI: 10.7567/APEX.8.066502  0.68
2015 Kuritzky LY, Myers DJ, Nedy J, Kelchner KM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates Applied Physics Express. 8. DOI: 10.7567/APEX.8.061002  0.68
2015 Megalini L, Becerra DL, Farrell RM, Pourhashemi A, Speck JS, Nakamura S, DenBaars SP, Cohen DA. Continuous-wave operation of a (2021) InGaN laser diode with a photoelectrochemically etched current aperture Applied Physics Express. 8. DOI: 10.7567/APEX.8.042701  0.68
2015 Marcinkevičius S, Gelžinyte K, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Spatial variations of optical properties of semipolar InGaN quantum wells Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076973  0.68
2015 Young EC, Yonkee BP, Leonard J, Wu F, Denbaars SP, Nakamura S, Speckmaterials JS. Ammonia molecular beam epitaxy technology for UV light emitters 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 137-138. DOI: 10.1109/PHOSST.2015.7248233  0.68
2015 Lee C, Zhang C, Cantore M, Farrell R, Oh SH, Margalith T, Speck JS, Nakamura S, Bowers JE, DenBaars SP. 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 112-113. DOI: 10.1109/PHOSST.2015.7248213  0.68
2015 Shen C, Leonard J, Pourhashemi A, Oubei H, Alias MS, Ng TK, Nakamura S, Denbaars SP, Speck JS, Alyamani AY, Eldesouki MM, Ooi BS. Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate 2015 Ieee Photonics Conference, Ipc 2015. 581-582. DOI: 10.1109/IPCon.2015.7323637  0.68
2015 Nedy JG, Young NG, Kelchner KM, Hu Y, Farrell RM, Nakamura S, DenBaars SP, Weisbuch C, Speck JS. Low damage dry etch for III-nitride light emitters Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085019  0.68
2015 Yonkee BP, Farrell RM, Leonard JT, DenBaars SP, Speck JS, Nakamura S. Demonstration of low resistance ohmic contacts to p-type (2021) GaN Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075007  0.68
2015 Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015  0.68
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.68
2015 Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, DenBaars SP, Speck JS. Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4936386  0.68
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Denbaars SP, Speck JS, Nakamura S. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts Journal of Applied Physics. 118. DOI: 10.1063/1.4931883  0.68
2015 Xue J, Zhao Y, Oh SH, Herrington WF, Speck JS, DenBaars SP, Nakamura S, Ram RJ. Thermally enhanced blue light-emitting diode Applied Physics Letters. 107. DOI: 10.1063/1.4931365  0.68
2015 Kowsz SJ, Pynn CD, Oh SH, Farrell RM, Speck JS, DenBaars SP, Nakamura S. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4930304  0.68
2015 Leonard JT, Young EC, Yonkee BP, Cohen DA, Margalith T, DenBaars SP, Speck JS, Nakamura S. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact Applied Physics Letters. 107. DOI: 10.1063/1.4929944  0.68
2015 Leonard JT, Cohen DA, Yonkee BP, Farrell RM, Margalith T, Lee S, Denbaars SP, Speck JS, Nakamura S. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture Applied Physics Letters. 107. DOI: 10.1063/1.4926365  0.68
2015 Pourhashemi A, Farrell RM, Cohen DA, Speck JS, Denbaars SP, Nakamura S. High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 ¯ 1 ¯) GaN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4915324  0.68
2015 Estrin Y, Rich DH, Keller S, Denbaars SP. Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1-xN/GaN quantum wells studied with time-resolved cathodoluminescence Journal of Applied Physics. 117. DOI: 10.1063/1.4906850  0.68
2015 Gelžinyte K, Ivanov R, Marcinkevičius S, Zhao Y, Becerra DL, Nakamura S, Denbaars SP, Speck JS. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells Journal of Applied Physics. 117. DOI: 10.1063/1.4905854  0.68
2015 Pan CC, Yan Q, Fu H, Zhao Y, Wu YR, Van De Walle C, Nakamura S, Denbaars SP. High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier Electronics Letters. 51: 1187-1189. DOI: 10.1049/el.2015.1647  0.68
2015 Young EC, Yonkee BP, Wu F, Saifaddin BK, Cohen DA, DenBaars SP, Nakamura S, Speck JS. Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202-1) AlGaN/GaN buffer layers Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2015.02.081  0.68
2015 Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Stable vicinal step orientations in m-plane GaN Journal of Crystal Growth. 411: 56-62. DOI: 10.1016/j.jcrysgro.2014.10.032  0.68
2014 Perl EE, McMahon WE, Farrell RM, DenBaars SP, Speck JS, Bowers JE. Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties. Nano Letters. 14: 5960-4. PMID 25238041 DOI: 10.1021/nl502977f  0.64
2014 Elias DC, Sivananthan A, Zhang C, Keller S, Chiang HW, Law JJM, Thibeault BJ, Mitchell WJ, Lee S, Carter AD, Huang CY, Chobpattana V, Stemmer S, Denbaars SP, Coldren LA, et al. Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls Japanese Journal of Applied Physics. 53. DOI: 10.7567/JJAP.53.065503  0.68
2014 Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/APEX.7.031003  0.68
2014 Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/LPT.2013.2288927  0.68
2014 Piccardo M, Martinelli L, Iveland J, Young N, Denbaars SP, Nakamura S, Speck JS, Weisbuch C, Peretti J. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/PhysRevB.89.235124  0.68
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.68
2014 Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834  0.68
2014 Becerra DL, Zhao Y, Oh SH, Pynn CD, Fujito K, Denbaars SP, Nakamura S. High-power low-droop violet semipolar (30 3 ¯ 1 ¯) InGaN/GaN light-emitting diodes with thick active layer design Applied Physics Letters. 105. DOI: 10.1063/1.4900793  0.68
2014 Marcinkevičius S, Gelžinyte K, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Carrier redistribution between different potential sites in semipolar (20 2 ¯ 1) InGaN quantum wells studied by near-field photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4896034  0.68
2014 Holder CO, Leonard JT, Farrell RM, Cohen DA, Yonkee B, Speck JS, Denbaars SP, Nakamura S, Feezell DF. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching Applied Physics Letters. 105. DOI: 10.1063/1.4890864  0.68
2014 Young NG, Perl EE, Farrell RM, Iza M, Keller S, Bowers JE, Nakamura S, Denbaars SP, Speck JS. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration Applied Physics Letters. 104. DOI: 10.1063/1.4873117  0.68
2014 Wu F, Zhao Y, Romanov A, Denbaars SP, Nakamura S, Speck JS. Stacking faults and interface rougheningin semipolar (20 2 ̄ 1 ̄) single InGaN quantum wells for long wavelength emission Applied Physics Letters. 104. DOI: 10.1063/1.4871512  0.68
2014 Ji Y, Liu W, Erdem T, Chen R, Tiam Tan S, Zhang ZH, Ju Z, Zhang X, Sun H, Sun XW, Zhao Y, Denbaars SP, Nakamura S, Volkan Demir H. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes Applied Physics Letters. 104. DOI: 10.1063/1.4870840  0.68
2014 Marcinkevičius S, Ivanov R, Zhao Y, Nakamura S, Denbaars SP, Speck JS. Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well Applied Physics Letters. 104. DOI: 10.1063/1.4869459  0.68
2014 Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508  0.68
2014 Sztein A, Bowers JE, Denbaars SP, Nakamura S. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties Applied Physics Letters. 104. DOI: 10.1063/1.4863420  0.68
2014 Denault KA, Brgoch J, Gaultois MW, Mikhailovsky A, Petry R, Winkler H, Denbaars SP, Seshadri R. Consequences of optimal bond valence on structural rigidity and improved luminescence properties in SrxBa2-xSiO4:Eu 2+ orthosilicate phosphors Chemistry of Materials. 26: 2275-2282. DOI: 10.1021/cm500116u  0.68
2014 Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/j.jcrysgro.2013.10.027  0.68
2014 Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties and carrier dynamics in m -plane InGaN quantum wells Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 690-693. DOI: 10.1002/pssc.201300430  0.68
2014 Shen C, Ng TK, Janjua B, Alyamani AY, El-Desouki MM, Speck JS, DenBaars SP, Ooi BS. Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate Asia Communications and Photonics Conference, Acpc 2014 0.68
2013 Brgoch J, Borg CK, Denault KA, Mikhailovsky A, DenBaars SP, Seshadri R. An efficient, thermally stable cerium-based silicate phosphor for solid state white lighting. Inorganic Chemistry. 52: 8010-6. PMID 23822144 DOI: 10.1021/ic400614r  0.32
2013 Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Optics Express. 21: A53-9. PMID 23389275  0.68
2013 Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/JJAP.52.08JC10  0.68
2013 Kawaguchi Y, Huang CY, Wu YR, Zhao Y, DenBaars SP, Nakamura S. Semipolar (20-21) single-quantum-well red light-emitting diodes with a low forward voltage Japanese Journal of Applied Physics. 52. DOI: 10.7567/JJAP.52.08JC08  0.68
2013 Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/APEX.6.092104  0.68
2013 Zhao Y, Oh SH, Wu F, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, DenBaars SP, Nakamura S. Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Applied Physics Express. 6. DOI: 10.7567/APEX.6.062102  0.68
2013 Kawaguchi Y, Huang SC, Farrell RM, Zhao Y, Speck JS, DenBaars SP, Nakamura S. Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/APEX.6.052103  0.68
2013 Holder C, Feezell D, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 8639. DOI: 10.1117/12.2008277  0.68
2013 Denbaars SP, Nakamura S, Speck JS. Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays 2013 Saudi International Electronics, Communications and Photonics Conference, Siecpc 2013. DOI: 10.1109/SIECPC.2013.6551030  0.68
2013 Farell RM, Young EC, Wu F, Nakamura S, Denbaars SP, Speck JS. Development of high-performance nonpolar III-nitride light-emitting devices 2013 Saudi International Electronics, Communications and Photonics Conference, Siecpc 2013. DOI: 10.1109/SIECPC.2013.6550978  0.68
2013 Hsu PS, Farrell RM, Weaver JJ, Fujito K, Denbaars SP, Speck JS, Nakamura S. Comparison of polished and dry etched semipolar (1122) III-Nitride laser facets Ieee Photonics Technology Letters. 25: 2105-2107. DOI: 10.1109/LPT.2013.2281608  0.68
2013 Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/LED.2013.2286954  0.68
2013 Feezell DF, Speck JS, Denbaars SP, Nakamura S. Semipolar (2021) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting Ieee/Osa Journal of Display Technology. 9: 190-198. DOI: 10.1109/JDT.2012.2227682  0.68
2013 Lal S, Lu J, Guidry M, Thibeault B, Denbaars SP, Mishra UK. Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices Device Research Conference - Conference Digest, Drc. 121-122. DOI: 10.1109/DRC.2013.6633823  0.68
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.68
2013 Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955  0.68
2013 Armstrong AM, Kelchner K, Nakamura S, Denbaars SP, Speck JS. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN Applied Physics Letters. 103. DOI: 10.1063/1.4841575  0.68
2013 Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699  0.68
2013 Young NG, Farrell RM, Hu YL, Terao Y, Iza M, Keller S, Denbaars SP, Nakamura S, Speck JS. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4826483  0.68
2013 Shan Hsu P, Wu F, Young EC, Romanov AE, Fujito K, Denbaars SP, Speck JS, Nakamura S. Blue and aquamarine stress-relaxed semipolar (11 2 ̄ 2) laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826087  0.68
2013 Pourhashemi A, Farrell RM, Hardy MT, Hsu PS, Kelchner KM, Speck JS, Denbaars SP, Nakamura S. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202̄1̄) GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4824773  0.68
2013 Marcinkevičius S, Zhao Y, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra Applied Physics Letters. 103. DOI: 10.1063/1.4823589  0.68
2013 Marcinkevičius S, Kelchner KM, Kuritzky LY, Nakamura S, Denbaars SP, Speck JS. Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells Applied Physics Letters. 103. DOI: 10.1063/1.4820839  0.68
2013 Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171  0.68
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  0.68
2013 Denault KA, Cantore M, Nakamura S, Denbaars SP, Seshadri R. Efficient and stable laser-driven white lighting Aip Advances. 3. DOI: 10.1063/1.4813837  0.68
2013 Shivaraman R, Kawaguchi Y, Tanaka S, Denbaars SP, Nakamura S, Speck JS. Comparative analysis of 202̄1 and 202̄1 ̄ semipolar GaN light emitting diodes using atom probe tomography Applied Physics Letters. 102. DOI: 10.1063/1.4812363  0.68
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  0.68
2013 Sztein A, Haberstroh J, Bowers JE, Denbaars SP, Nakamura S. Calculated thermoelectric properties of InxGa1-xN, InxAl1-xN, and AlxGa1-xN Journal of Applied Physics. 113. DOI: 10.1063/1.4804174  0.68
2013 Marcinkevičius S, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Optical properties of extended and localized states in m-plane InGaN quantum wells Applied Physics Letters. 102. DOI: 10.1063/1.4794904  0.68
2013 Zhao Y, Wu F, Huang CY, Kawaguchi Y, Tanaka S, Fujito K, Speck JS, Denbaars SP, Nakamura S. Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization Applied Physics Letters. 102. DOI: 10.1063/1.4794864  0.68
2013 Farrell RM, Haeger DA, Fujito K, Denbaars SP, Nakamura S, Speck JS. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4790636  0.68
2013 Denault KA, Cheng Z, Brgoch J, Denbaars SP, Seshadri R. Structure-composition relationships and optical properties in cerium-substituted (Sr,Ba)3(Y,La)(BO3)3 borate phosphors Journal of Materials Chemistry C. 1: 7339-7345. DOI: 10.1039/c3tc31621a  0.68
2013 Denault KA, Mikhailovsky AA, Brinkley S, Denbaars SP, Seshadri R. Improving color rendition in solid state white lighting through the use of quantum dots Journal of Materials Chemistry C. 1: 1461-1466. DOI: 10.1039/c2tc00420h  0.68
2013 Brgoch J, Denbaars SP, Seshadri R. Proxies from Ab initio calculations for screening efficient Ce3+ phosphor hosts Journal of Physical Chemistry C. 117: 17955-17959. DOI: 10.1021/jp405858e  0.68
2013 Brgoch J, Borg CKH, Denault KA, Mikhailovsky A, Denbaars SP, Seshadri R. An efficient, thermally stable cerium-based silicate phosphor for solid state white lighting Inorganic Chemistry. 52: 8010-8016. DOI: 10.1021/ic400614r  0.68
2013 Brgoch J, Borg CKH, Denault KA, Douglas JR, Amanda Strom T, Denbaars SP, Seshadri R. Rapid microwave preparation of cerium-substituted sodium yttrium silicate phosphors for solid state white lighting Solid State Sciences. 26: 115-120. DOI: 10.1016/j.solidstatesciences.2013.10.004  0.68
2013 Brgoch J, Borg CKH, Denault KA, Denbaars SP, Seshadri R. Tuning luminescent properties through solid-solution in (Ba 1-xSrx)9Sc2Si6O 24:Ce3+,Li+ Solid State Sciences. 18: 149-154. DOI: 10.1016/j.solidstatesciences.2013.01.011  0.68
2013 Kelchner KM, Kuritzky LY, Fujito K, Nakamura S, Denbaars SP, Speck JS. Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates Journal of Crystal Growth. 382: 80-86. DOI: 10.1016/j.jcrysgro.2013.08.013  0.68
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/j.actamat.2012.10.042  0.68
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/s11664-013-2794-6  0.68
2013 Nijikovsky B, Richardson JJ, Garbrecht M, Denbaars SP, Kaplan WD. Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: Growth and post-annealing Journal of Materials Science. 48: 1614-1622. DOI: 10.1007/s10853-012-6918-9  0.68
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.68
2013 Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Demonstration of true green ITO clad semipolar(2021) InGaN/GaN laser diodes Cleo: Science and Innovations, Cleo_si 2013. CF1F.1.  0.68
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... DenBaars SP, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.68
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... DenBaars SP, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  0.68
2013 Denbaars SP, Speck JS, Nakamura S. Energy savings potential of GaN LEDs for energy efficient lighting and future research directions Asia Communications and Photonics Conference, Acp 0.68
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  0.68
2013 Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes 2013 Conference On Lasers and Electro-Optics, Cleo 2013 0.68
2012 Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP. High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. Optics Express. 20: A13-9. PMID 22379670  0.68
2012 Lu J, Hu YL, Brown DF, Wu F, Keller S, Speck JS, DenBaars SP, Mishra UK. Charge and mobility enhancements in in-polar InAl(Ga)N/Al(Ga)N/GaN heterojunctions grown by metal-organic chemical vapor deposition using a graded growth strategy Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.115502  0.68
2012 Choi SB, Bae SY, Lee DS, Kong BH, Cho HK, Song JH, Ahn BJ, Keading JF, Nakamura S, DenBaars SP, Speck JS. Optical characterization of double peak behavior in {101̄1} semipolar light-emitting diodes on miscut m-plane sapphire substrates Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.052101  0.68
2012 Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/APEX.5.102103  0.68
2012 Brinkley SE, Keraly CL, Sonoda J, Weisbuch C, Speck JS, Nakamura S, DenBaars SP. Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/APEX.5.032104  0.68
2012 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, et al. Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting Conference Record of the Ieee Photovoltaic Specialists Conference. 3076-3079. DOI: 10.1109/PVSC.2012.6318231  0.68
2012 Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/LED.2012.2188710  0.68
2012 Kolluri S, Keller S, Denbaars SP, Mishra UK. Microwave power performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC substrates using an Al 2O 3 etch-stop technology Ieee Electron Device Letters. 33: 44-46. DOI: 10.1109/LED.2011.2173458  0.68
2012 Tan ST, Sun XW, Demir HV, Denbaars SP. Advances in the LED materials and architectures for energy-saving solid-state lighting toward lighting revolution Ieee Photonics Journal. 4: 613-619. DOI: 10.1109/JPHOT.2012.2191276  0.68
2012 Lal S, Lu J, Thibeault B, Denbaars SP, Mishra UK. Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In 0.53Ga 0.47as channel and III-N drain Device Research Conference - Conference Digest, Drc. 165-166. DOI: 10.1109/DRC.2012.6257041  0.68
2012 Farrell RM, Young EC, Wu F, Denbaars SP, Speck JS. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024001  0.68
2012 Hardy MT, Nakamura S, Speck JS, Denbaars SP. Suppression of relaxation in (202̄1) InGaN/GaN laser diodes using limited area epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4770367  0.68
2012 Keller S, Pfaff N, Denbaars SP, Mishra UK. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101. DOI: 10.1063/1.4764070  0.68
2012 Sztein A, Bowers JE, Denbaars SP, Nakamura S. Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates Journal of Applied Physics. 112. DOI: 10.1063/1.4759287  0.68
2012 Young EC, Wu F, Romanov AE, Haeger DA, Nakamura S, Denbaars SP, Cohen DA, Speck JS. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission Applied Physics Letters. 101. DOI: 10.1063/1.4757423  0.68
2012 Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791  0.68
2012 Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693  0.68
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.68
2012 Kawaguchi Y, Huang CY, Wu YR, Yan Q, Pan CC, Zhao Y, Tanaka S, Fujito K, Feezell D, Van De Walle CG, Denbaars SP, Nakamura S. Influence of polarity on carrier transport in semipolar (2021̄) and (202̄1) multiple-quantum-well light-emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.4726106  0.68
2012 Zhao Y, Yan Q, Huang CY, Huang SC, Shan Hsu P, Tanaka S, Pan CC, Kawaguchi Y, Fujito K, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S, Feezell D. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Applied Physics Letters. 100. DOI: 10.1063/1.4719100  0.68
2012 Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465  0.68
2012 Shan Hsu P, Hardy MT, Young EC, Romanov AE, Denbaars SP, Nakamura S, Speck JS. Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4707160  0.68
2012 Haeger DA, Young EC, Chung RB, Wu F, Pfaff NA, Tsai M, Fujito K, Denbaars SP, Speck JS, Nakamura S, Cohen DA. 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100. DOI: 10.1063/1.4704560  0.68
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.68
2012 Chung RB, Chen HT, Pan CC, Ha JS, Denbaars SP, Nakamura S. The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN Applied Physics Letters. 100. DOI: 10.1063/1.3690878  0.68
2012 Henry TA, Armstrong A, Kelchner KM, Nakamura S, Denbaars SP, Speck JS. Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3687700  0.68
2012 Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850  0.68
2012 Denault KA, George NC, Paden SR, Brinkley S, Mikhailovsky AA, Neuefeind J, Denbaars SP, Seshadri R. A green-yellow emitting oxyfluoride solid solution phosphor Sr 2Ba(AlO 4F) 1-x(SiO 5) x:Ce 3+ for thermally stable, high color rendition solid state white lighting Journal of Materials Chemistry. 22: 18204-18213. DOI: 10.1039/c2jm33620k  0.68
2012 Matioli E, Brinkley S, Kelchner KM, Hu YL, Nakamura S, DenBaars S, Speck J, Weisbuch C. High-brightness polarized light-emitting diodes Light: Science and Applications. 1. DOI: 10.1038/lsa.2012.22  0.68
2012 Kelchner KM, DenBaars SP, Speck JS. GaN Laser Diodes on Nonpolar and Semipolar Planes Semiconductors and Semimetals. 86: 149-182. DOI: 10.1016/B978-0-12-391066-0.00004-6  0.68
2012 Martyniuk M, Parish G, Marchand H, Fini PT, DenBaars SP, Faraone L. Nanoindentation of laterally overgrown epitaxial gallium nitride Electronic Materials Letters. 8: 111-115. DOI: 10.1007/s13391-012-1074-6  0.68
2012 Julian N, Mages P, Zhang C, Zhang J, Kraemer S, Stemmer S, Denbaars S, Coldren L, Petroff P, Bowers J. Coalescence of InP epitaxial lateral overgrowth by MOVPE with V/III ratio variation Journal of Electronic Materials. 41: 845-852. DOI: 10.1007/s11664-012-2020-y  0.68
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/s11664-012-1977-x  0.68
2012 Fujiwara T, Keller S, Speck JS, Denbaars SP, Mishra UK. Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n +-GaN contact layer Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 891-893. DOI: 10.1002/pssc.201100419  0.68
2012 Garrett GA, Rotella P, Shen H, Wraback M, Haeger DA, Chung RB, Pfaff N, Young EC, Denbaars SP, Speck JS, Cohen DA. Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN Physica Status Solidi (B) Basic Research. 249: 507-510. DOI: 10.1002/pssb.201100528  0.68
2012 Keller S, Lu J, Mishra UK, Denbaars SP, Speck JS. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica Physica Status Solidi (a) Applications and Materials Science. 209: 431-433. DOI: 10.1002/pssa.201100349  0.68
2012 Haeger DA, Young EC, Chung RB, Wu F, Romanov AE, Nakamura S, Denbaars SP, Speck JS, Cohen DA. 384 nm AlGaN diode lasers on relaxed semipolar buffers 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2012 Pan CC, Nakamura S, DenBaars SP. High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2012 Huang CY, Zhao Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2012 Zhao Y, Huang CY, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) blue and green InGaN light-emitting diodes 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.68
2012 Huang CY, Alam Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells Cleo: Science and Innovations, Cleo_si 2012. CTu2N.5.  0.68
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2021 Cleo: Science and Innovations, Cleo_si 2012. CTu2N.2.  0.68
2012 Raring JW, Schmidt MC, Poblenz C, Huang H, Bai C, Rudy P, Speck JS, DenBaars SP, Nakamura S. Recent progress in green and blue ingan laser diodes for projection display applications Proceedings of the International Display Workshops. 3: 1496-1497.  0.68
2011 Im WB, George N, Kurzman J, Brinkley S, Mikhailovsky A, Hu J, Chmelka BF, DenBaars SP, Seshadri R. Efficient and color-tunable oxyfluoride solid solution phosphors for solid-state white lighting. Advanced Materials (Deerfield Beach, Fla.). 23: 2300-5. PMID 21480397 DOI: 10.1002/adma.201003640  0.68
2011 Chung RB, Bierwagen O, Wu F, Keller S, Denbaars SP, Speck JS, Nakamura S. Temperature dependent capacitance-voltage analysis of unintentionally doped and Si doped Al0.82In0.18N grown on GaN Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.101001  0.68
2011 Fujiwara T, Yeluri R, Denninghoff D, Lu J, Keller S, Speck JS, DenBaars SP, Mishra UK. Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with +3 v of threshold voltage using Al2O3 deposited by atomic layer deposition Applied Physics Express. 4. DOI: 10.1143/APEX.4.096501  0.68
2011 Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/APEX.4.092105  0.68
2011 Zhao Y, Tanaka S, Pan CC, Fujito K, Feezell D, Speck JS, DenBaars SP, Nakamura S. High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Applied Physics Express. 4. DOI: 10.1143/APEX.4.082104  0.68
2011 Raring JW, Schmidt MC, Poblenz C, Lin Y, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates Ieee Photonic Society 24th Annual Meeting, Pho 2011. 503-504. DOI: 10.1109/PHO.2011.6110781  0.68
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.68
2011 Haeger DA, Holder C, Farrell RM, Hsu PS, Kelchner KM, Fujito K, Cohen DA, Denbaars SP, Speck JS, Nakamura S. Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes Device Research Conference - Conference Digest, Drc. 261-262. DOI: 10.1109/DRC.2011.5994523  0.68
2011 Kolluri S, Keller S, Denbaars SP, Mishra UK. N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess Device Research Conference - Conference Digest, Drc. 215-216. DOI: 10.1109/DRC.2011.5994504  0.68
2011 Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113  0.68
2011 Sztein A, Ohta H, Bowers JE, Denbaars SP, Nakamura S. High temperature thermoelectric properties of optimized InGaN Journal of Applied Physics. 110. DOI: 10.1063/1.3670966  0.68
2011 Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791  0.68
2011 Brinkley SE, Pfaff N, Denault KA, Zhang Z, Hintzen HT, Seshadri R, Nakamura S, Denbaars SP. Robust thermal performance of Sr 2Si 5N 8:Eu 2+: An efficient red emitting phosphor for light emitting diode based white lighting Applied Physics Letters. 99. DOI: 10.1063/1.3666785  0.68
2011 Farrell RM, Haeger DA, Hsu PS, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3657149  0.68
2011 Farrell RM, Haeger DA, Hsu PS, Schmidt MC, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3656970  0.68
2011 Huang CY, Yan Q, Zhao Y, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. Influence of Mg-doped barriers on semipolar (202̄1) multiple-quantum-well green light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3647560  0.68
2011 Hsu PS, Young EC, Romanov AE, Fujito K, Denbaars SP, Nakamura S, Speck JS. Misfit dislocation formation via pre-existing threading dislocation glide in (11 2 2) semipolar heteroepitaxy Applied Physics Letters. 99. DOI: 10.1063/1.3628459  0.68
2011 Neufeld CJ, Cruz SC, Farrell RM, Iza M, Keller S, Nakamura S, Denbaars SP, Speck JS, Mishra UK. Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells Applied Physics Letters. 99. DOI: 10.1063/1.3624850  0.68
2011 Zhao Y, Tanaka S, Yan Q, Huang CY, Chung RB, Pan CC, Fujito K, Feezell D, Van De Walle CG, Speck JS, Denbaars SP, Nakamura S. High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting diodes Applied Physics Letters. 99. DOI: 10.1063/1.3619826  0.68
2011 Richardson JJ, Estrada D, Denbaars SP, Hawker CJ, Campos LM. A facile route to patterned epitaxial ZnO nanostructures by soft lithography Journal of Materials Chemistry. 21: 14417-14419. DOI: 10.1039/c1jm13167b  0.68
2011 Richardson JJ, Goh GKL, Le HQ, Liew LL, Lange FF, Denbaars SP. Thermally induced pore formation in epitaxial ZnO films grown from low temperature aqueous solution Crystal Growth and Design. 11: 3558-3563. DOI: 10.1021/cg200528e  0.68
2011 Hardy MT, Feezell DF, Denbaars SP, Nakamura S. Group III-nitride lasers: A materials perspective Materials Today. 14: 408-415. DOI: 10.1016/S1369-7021(11)70185-7  0.68
2011 Hardy MT, Farrell RM, Hsu PS, Haeger DA, Kelchner K, Fujito K, Chakraborty A, Cohen DA, Nakamura S, Speck JS, Denbaars SP. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2226-2228. DOI: 10.1002/pssc.201001149  0.68
2011 Hsu PS, Sonoda J, Kelchner KM, Tyagi A, Farrell RM, Haeger DA, Young EC, Romanov AE, Fujito K, Ohta H, Denbaars SP, Speck JS, Nakamura S. Blue InGaN/GaN laser diodes grown on (333̄1̄) free-standing GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2390-2392. DOI: 10.1002/pssc.201001012  0.68
2011 Zhang C, Mages P, Julian N, Coldren L, DenBaars S, Bowers J. Growth habit control of epitaxial lateral overgrown InP by MOCVD Optics Infobase Conference Papers 0.68
2011 Chung RB, Young EC, Haeger DA, DenBaars SP, Speck JS, Cohen DA. Semipolar AlN on bulk GaN for UV-C diode lasers Optics Infobase Conference Papers 0.68
2011 Raring JW, Schmidt MC, Poblenz C, Lin Y, Goutain E, Huang H, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Green and blue InGaN-based laser diodes for display applications Proceedings of the International Display Workshops. 3: 2061-2063.  0.68
2011 Norberg EJ, Guzzon RS, Parker JS, DenBaars SP, Coldren LA. An InGaAsP/InP integration platform with low loss deeply etched waveguides and record SOA RF-linearity Optics Infobase Conference Papers 0.68
2011 Raring JW, Schmidt MC, Poblenz C, Mondry MJ, Rudy P, Speck JS, DenBaars SP, Nakamura S. Invited paper: Progress in green and blue laser diodes and their application in pico projection systems 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 2: 677-680.  0.68
2011 Feezell D, Speck J, Denbaars S, Nakamura S. Optoelectronic devices grown on nonpolar and semipolar free-standing GaN substrates 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011 0.68
2009 Im WB, Fourré Y, Brinkley S, Sonoda J, Nakamura S, DenBaars SP, Seshadri R. Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1-xSr2+xAlO5-xFx solid solutions for solid state white lighting. Optics Express. 17: 22673-9. PMID 20052193 DOI: 10.1364/OE.17.022673  0.68
2008 Masui H, Nakamura S, DenBaars SP. Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes. Applied Optics. 47: 88-92. PMID 18157281  0.68
2007 Masui H, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. Applied Optics. 46: 5974-8. PMID 17694152  0.68
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/nmat1726  0.68
2005 Chu SW, Chan MC, Tai SP, Keller S, DenBaars SP, Sun CK. Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN. Optics Letters. 30: 2463-5. PMID 16196353  0.36
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