Umesh Mishra - Publications

Affiliations: 
Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
Website:
https://engineering.ucsb.edu/people/umesh-mishra

181 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Wang J, Zhang X, Li H, Wang C, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339. PMID 33007589 DOI: 10.1016/J.Jcis.2020.09.036  1
2020 Liu W, Sayed I, Gupta C, Li H, Keller S, Mishra U. An improved methodology for extracting interface state density at Si3N4/GaN Applied Physics Letters. 116: 22104. DOI: 10.1063/1.5125645  1
2020 Wurm C, Ahmadi E, Wu F, Hatui N, Keller S, Speck J, Mishra U. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy Solid State Communications. 305: 113763. DOI: 10.1016/J.Ssc.2019.113763  0.92
2019 Wang J, Zhang X, Wang C, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688. PMID 31499439 DOI: 10.1016/J.Jcis.2019.08.079  1
2019 Sayed I, Liu W, Chan S, Gupta C, Guidry M, Li H, Keller S, Mishra U. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103. DOI: 10.1063/1.5111148  1
2017 Agarwal A, Gupta C, Alhassan A, Mates T, Keller S, Mishra U. Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition Applied Physics Express. 10: 111002. DOI: 10.7567/Apex.10.111002  0.92
2017 Agarwal A, Tahhan M, Mates T, Keller S, Mishra U. Suppression of Mg propagation into subsequent layers grown by MOCVD Journal of Applied Physics. 121: 25106. DOI: 10.1063/1.4972031  0.92
2016 Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/JJAP.55.021501  1
2016 Mishra US, Patnaik S, Mishra BB. Role of hope in job satisfaction and stress International Business Management. 10: 1729-1736. DOI: 10.3923/ibm.2016.1729.1736  0.92
2016 Tahhan M, Nedy J, Chan SH, Lund C, Li H, Gupta G, Keller S, Mishra U. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944054  0.92
2016 Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/LED.2015.2502253  0.92
2016 Mishra U, Rakshit D, Prabhu R. Survival of time-evolved quantum correlations depending on whether quenching is across a critical point in an XY spin chain Physical Review a - Atomic, Molecular, and Optical Physics. 93. DOI: 10.1103/Physreva.93.042322  0.68
2016 Agarwal A, Gupta C, Enatsu Y, Keller S, Mishra U. Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD Semiconductor Science and Technology. 31: 125018. DOI: 10.1088/0268-1242/31/12/125018  0.92
2016 Bisi D, Chan SH, Liu X, Yeluri R, Keller S, Meneghini M, Meneghesso G, Zanoni E, Mishra UK. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 108. DOI: 10.1063/1.4944466  0.92
2016 Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531  1
2016 Fireman MN, Browne DA, Mishra UK, Speck JS. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4941323  1
2016 Liu X, Jackson CM, Wu F, Mazumder B, Yeluri R, Kim J, Keller S, Arehart AR, Ringel SA, Speck JS, Mishra UK. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4939157  1
2016 Mishra U. Compound Semiconductors Physica Status Solidi (B) Basic Research. 253: 612. DOI: 10.1002/pssb.201670528  1
2016 Hestroffer K, Lund C, Li H, Keller S, Speck JS, Mishra UK. Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades Physica Status Solidi (B) Basic Research. 253: 626-629. DOI: 10.1002/Pssb.201552550  1
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627  1
2016 Gupta C, Enatsu Y, Gupta G, Keller S, Mishra UK. High breakdown voltage p-n diodes on GaN on sapphire by MOCVD Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/pssa.201532554  1
2016 Joe W, Mishra US. Reckoning Level Differentials in the Measurement of Progress: An Application in the Context of Deliveries Attended by Skilled Health Personnel Across Least Developed Countries (LDCs) Journal of International Development. DOI: 10.1002/jid.3207  1
2015 Katiyar NK, Mishra US, Pathak RK. Influence of zinc, boron and molybdenum application on biochemical composition of chickpea grain grown under rainfed conditions of Madhya Pradesh Indian Journal of Agricultural Biochemistry. 28: 191-193. DOI: 10.5958/0974-4479.2015.00016.7  0.4
2015 Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922  1
2015 Gupta G, Ahmadi E, Hestroffer K, Acuna E, Mishra UK. Common emitter current gain >1 in III-N hot electron transistors with 7-nm GaN/InGaN base Ieee Electron Device Letters. 36: 439-441. DOI: 10.1109/LED.2015.2416345  1
2015 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/LED.2014.2373375  1
2015 Podolska A, Broxtermann D, Malindretos J, Umana-Membreno GA, Keller S, Mishra UK, Rizzi A, Nener BD, Parish G. Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode Ieee Sensors Journal. 15: 5320-5326. DOI: 10.1109/Jsen.2015.2439692  1
2015 Kikkawa T, Hosoda T, Shono K, Imanishi K, Asai Y, Wu Y, Shen L, Smith K, Dunn D, Chowdhury S, Smith P, Gritters J, McCarthy L, Barr R, Lal R, ... Mishra U, et al. Commercialization and reliability of 600 v GaN power switches Ieee International Reliability Physics Symposium Proceedings. 2015: 6C11-6C16. DOI: 10.1109/IRPS.2015.7112766  0.92
2015 Kikkawa T, Hosoda T, Imanishi K, Shono K, Itabashi K, Ogino T, Miyazaki Y, Mochizuki A, Kiuchi K, Kanamura M, Kamiyama M, Akiyama S, Kawasaki S, Maeda T, Asai Y, ... ... Mishra U, et al. 600 v JEDEC-qualified highly reliable GaN HEMTs on Si substrates Technical Digest - International Electron Devices Meeting, Iedm. 2015: 2.6.1-2.6.4. DOI: 10.1109/IEDM.2014.7046968  0.92
2015 Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015  1
2015 Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012  1
2015 Kaun SW, Mazumder B, Fireman MN, Kyle ECH, Mishra UK, Speck JS. Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055010  1
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  1
2015 Hestroffer K, Wu F, Li H, Lund C, Keller S, Speck JS, Mishra UK. Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105015  1
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105003  1
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107. DOI: 10.1063/1.4934876  1
2015 Fireman MN, Browne DA, Mazumder B, Speck JS, Mishra UK. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4921633  1
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  1
2015 Kim J, Laurent MA, Li H, Lal S, Mishra UK. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain Applied Physics Letters. 106. DOI: 10.1063/1.4906074  1
2015 Mishra U, Sen A, Sen U. Local decoherence-resistant quantum states of large systems Physics Letters, Section a: General, Atomic and Solid State Physics. 379: 261-271. DOI: 10.1016/j.physleta.2014.11.037  0.68
2015 Mishra US, Shukla V. Welfare Comparisons with Multidimensional Well-Being Indicators: An Indian Illustration Social Indicators Research. DOI: 10.1007/s11205-015-1117-0  1
2015 Bhattacharya S, Mishra BB, Mishra US. Mystery shopping for consumer contentment, reliance, and adhesion in the retail industry: A descriptive study Indian Journal of Marketing. 45: 55-67.  0.92
2015 Singh US, Mishra US. Assessment of need for vertical coordination in supply chain of vegetable industry International Food Research Journal. 22: 1417-1423.  0.92
2014 Rane AD, Mishra U, Biswas A, Sen De A, Sen U. Benford's law gives better scaling exponents in phase transitions of quantum XY models. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 90: 022144. PMID 25215725 DOI: 10.1103/PhysRevE.90.022144  0.68
2014 Gupta G, Laurent M, Lu J, Keller S, Mishra UK. Design of polarization-dipole-induced isotype heterojunction diodes for use in III-N hot electron transistors Applied Physics Express. 7. DOI: 10.7567/APEX.7.014102  1
2014 Sasikumar A, Cardwell DW, Arehart AR, Lu J, Kaun SW, Keller S, Mishra UK, Speck JS, Pelz JP, Ringel SA. Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.1.1-2C.1.6. DOI: 10.1109/IRPS.2014.6860588  1
2014 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra U. Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers Device Research Conference - Conference Digest, Drc. 255-256. DOI: 10.1109/DRC.2014.6872394  1
2014 Yeluri R, Lu J, Browne D, Hurni CA, Chowdhury S, Keller S, Speck JS, Mishra UK. Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2014.6872393  1
2014 Kim J, Lal S, Laurent MA, Mishra UK. Vertical electron transistors with In0.53Ga0.47As channel and N-polar In0.1Ga0.9N/GaN drain achieved by direct wafer-bonding Device Research Conference - Conference Digest, Drc. 221-222. DOI: 10.1109/DRC.2014.6872377  1
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  1
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  1
2014 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Applied Physics Letters. 105. DOI: 10.1063/1.4905367  1
2014 Yeluri R, Liu X, Guidry M, Koksaldi OS, Lal S, Kim J, Lu J, Keller S, Mishra UK. Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN Applied Physics Letters. 105. DOI: 10.1063/1.4903344  1
2014 Hurni CA, Kroemer H, Mishra UK, Speck JS. M-plane (1010) and (2021) GaN/AlxGa1-xN conduction band offsets measured by capacitance-voltage profiling Applied Physics Letters. 105. DOI: 10.1063/1.4903180  1
2014 Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834  1
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  1
2014 Mazumder B, Liu X, Yeluri R, Wu F, Mishra UK, Speck JS. Atom probe tomography studies of Al2O3 gate dielectrics on GaN Journal of Applied Physics. 116. DOI: 10.1063/1.4896498  1
2014 Killat N, Uren MJ, Keller S, Kolluri S, Mishra UK, Kuball M. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors Applied Physics Letters. 105. DOI: 10.1063/1.4892449  1
2014 Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768  1
2014 Katz EJ, Lin CH, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on metal-gallium nitride contacts Journal of Applied Physics. 115. DOI: 10.1063/1.4869552  1
2014 Lu J, Zheng X, Guidry M, Denninghoff D, Ahmadi E, Lal S, Keller S, Denbaars SP, Mishra UK. Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors Applied Physics Letters. 104. DOI: 10.1063/1.4867508  1
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  1
2014 Rajan SI, Mishra US. The national policy for older persons: Critical issues in implementation Population Ageing in India. 135-154. DOI: 10.1017/CCO9781139683456.007  1
2014 Liu X, Chan SH, Wu F, Li Y, Keller S, Speck JS, Mishra UK. Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity Journal of Crystal Growth. 408: 78-84. DOI: 10.1016/J.Jcrysgro.2014.09.029  1
2014 Singh U, Mishra U, Dhar HS. Enhancing robustness of multiparty quantum correlations using weak measurement Annals of Physics. 350: 50-68. DOI: 10.1016/j.aop.2014.07.013  0.68
2014 Singh US, Mishra US. Supply chain management through vertical coordination in vegetable industry International Journal of Supply Chain Management. 3: 148-154.  0.92
2014 Singh U, Mishra U, Mishra BB. Vertical coordination for optimization of the vegetable supply chain International Food Research Journal. 21: 1387-1394.  0.92
2013 Keller S, Farrell RM, Iza M, Terao Y, Young N, Mishra UK, Nakamura S, DenBaars SP, Speck JS. Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jc10  1
2013 Dasgupta S, Lu J, Nidhi, Raman A, Hurni C, Gupta G, Speck JS, Mishra UK. Estimation of hot electron relaxation time in GaN using hot electron transistors Applied Physics Express. 6. DOI: 10.7567/Apex.6.034002  1
2013 Chowdhury S, Mishra UK. Lateral and vertical transistors using the Algan/GAN Heterostructure Ieee Transactions On Electron Devices. 60: 3060-3066. DOI: 10.1109/Ted.2013.2277893  1
2013 Lal S, Lu J, Gupta G, Thibeault BJ, Denbaars SP, Mishra UK. Impact of gate-aperture overlap on the channel-pinch off in ingaas/ingan-based bonded aperture vertical electron transistor Ieee Electron Device Letters. 34: 1500-1502. DOI: 10.1109/LED.2013.2286954  1
2013 Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137  1
2013 Denninghoff D, Lu J, Ahmadi E, Keller S, Mishra UK. N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz f max Device Research Conference - Conference Digest, Drc. 197-198. DOI: 10.1109/DRC.2013.6633861  1
2013 Lal S, Lu J, Guidry M, Thibeault B, Denbaars SP, Mishra UK. Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices Device Research Conference - Conference Digest, Drc. 121-122. DOI: 10.1109/DRC.2013.6633823  1
2013 Mishra U, Prabhu R, Sen A, Sen U. Tuning interaction strength leads to an ergodic-nonergodic transition of quantum correlations in the anisotropic Heisenberg spin model Physical Review a - Atomic, Molecular, and Optical Physics. 87. DOI: 10.1103/PhysRevA.87.052318  0.68
2013 Mishra U, Sen A, Sen U. Quantum superposition in composite systems of microscopic and macroscopic parts resistant to particle loss and local decoherence Physical Review a - Atomic, Molecular, and Optical Physics. 87. DOI: 10.1103/PhysRevA.87.052117  0.68
2013 Meneghesso G, Meneghini M, Bisi D, Rossetto I, Cester A, Mishra UK, Zanoni E. Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074021  1
2013 Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014  1
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  1
2013 Singisetti U, Wong MH, Mishra UK. High-performance N-polar GaN enhancement-mode device technology Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074006  1
2013 Kaun SW, Wong MH, Mishra UK, Speck JS. Molecular beam epitaxy for high-performance Ga-face GaN electron devices Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074001  1
2013 Schaake CA, Brown DF, Swenson BL, Keller S, Speck JS, Mishra UK. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/10/105021  1
2013 Joe W, Mishra US, Navaneetham K. Inter-Group Inequalities in Child Undernutrition in India: Group Analogue of the Gini Coefficient and Atkinson's Index Oxford Development Studies. 41: 239-257. DOI: 10.1080/13600818.2013.796353  1
2013 Farrell RM, Al-Heji AA, Neufeld CJ, Chen X, Iza M, Cruz SC, Keller S, Nakamura S, DenBaars SP, Mishra UK, Speck JS. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4844955  1
2013 Liu X, Kim J, Yeluri R, Lal S, Li H, Lu J, Keller S, Mazumder B, Speck JS, Mishra UK. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 114. DOI: 10.1063/1.4827201  1
2013 Lin CH, Katz EJ, Qiu J, Zhang Z, Mishra UK, Cao L, Brillson LJ. Neutron irradiation effects on gallium nitride-based Schottky diodes Applied Physics Letters. 103. DOI: 10.1063/1.4826091  1
2013 Yeluri R, Liu X, Swenson BL, Lu J, Keller S, Mishra UK. Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors Journal of Applied Physics. 114. DOI: 10.1063/1.4819402  1
2013 Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385  1
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  1
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  1
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  1
2013 Mazumder B, Kaun SW, Lu J, Keller S, Mishra UK, Speck JS. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4798249  1
2013 Kaun SW, Wong MH, Lu J, Mishra UK, Speck JS. Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN Electronics Letters. 49: 903-905. DOI: 10.1049/El.2013.1723  1
2013 Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010  1
2013 Podolska A, Hool LC, Pfleger KDG, Mishra UK, Parish G, Nener BD. AlGaN/GaN-based biosensor for label-free detection of biological activity Sensors and Actuators, B: Chemical. 177: 577-582. DOI: 10.1016/J.Snb.2012.11.086  1
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042  1
2013 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, ... Mishra UK, et al. Optimization of annealing process for improved InGaN solar cell performance Journal of Electronic Materials. 42: 3467-3470. DOI: 10.1007/S11664-013-2794-6  1
2013 Liu X, Yeluri R, Lu J, Mishra UK. Effects of H2O pretreatment on the capacitance-voltage characteristics of atomic-layer-deposited Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Journal of Electronic Materials. 42: 33-39. DOI: 10.1007/s11664-012-2246-8  1
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  1
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... Mishra UK, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  1
2013 Mishra US, Khan MK. Should life potential be a better alternative to life expectancy at birth? An Indian illustration Economics Bulletin. 2: 1311-1316.  1
2013 Connelly BC, Woodward NT, Metcalfe GD, Rodak LE, Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, ... ... Mishra UK, et al. Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy Cleo: Science and Innovations, Cleo_si 2013. CTh1M.7.  1
2013 Zhou L, Wu YF, Mishra U. True-bridgeless totem-pole PFC based on GaN HEMTs Pcim Europe Conference Proceedings. 1017-1022.  1
2013 Mishra U, Wu Y. Latest high voltage GaN devices for inverters Pcim Europe Conference Proceedings. 724-729.  1
2013 Dash SR, Mishra US, Mishra P. Emerging issues and opportunities in disaster response supply chain management International Journal of Supply Chain Management. 2: 55-61.  0.92
2013 Farrell RM, Friedman DJ, Young NG, Perl EE, Singh N, Lang JR, Neufeld CJ, Iza M, Cruz SC, Keller S, McMahon WE, Nakamura S, DenBaars SP, Mishra UK, Bowers JE, et al. InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs Cleo: Applications and Technology, Cleo_at 2013. ATh4N.4.  1
2012 Ramanathan M, Sankara Sarma P, Mishra US. Compensation for trial-related injury: does simplicity compromise fairness? Indian Journal of Medical Ethics. 9: 232-5. PMID 23099593 DOI: http://ijme.in/204ar232.html  1
2012 Singh A, Padmadas SS, Mishra US, Pallikadavath S, Johnson FA, Matthews Z. Socio-economic inequalities in the use of postnatal care in India. Plos One. 7: e37037. PMID 22623976 DOI: 10.1371/journal.pone.0037037  1
2012 Dasgupta S, Nidhi, Wu F, Speck JS, Mishra UK. Growth and characterization of n-polar GaN films on Si(111) by plasma assisted molecular beam epitaxy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115503  1
2012 Lu J, Hu YL, Brown DF, Wu F, Keller S, Speck JS, DenBaars SP, Mishra UK. Charge and mobility enhancements in in-polar InAl(Ga)N/Al(Ga)N/GaN heterojunctions grown by metal-organic chemical vapor deposition using a graded growth strategy Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.115502  1
2012 Wong MH, Singisetti U, Lu J, Speck JS, Mishra UK. Anomalous output conductance in N-polar GaN high electron mobility transistors Ieee Transactions On Electron Devices. 59: 2988-2995. DOI: 10.1109/Ted.2012.2211599  1
2012 Lin CH, Merz TA, Doutt DR, Joh J, Del Alamo JA, Mishra UK, Brillson LJ. Strain and temperature dependence of defect formation at AlGaN/GaN high-electron-mobility transistors on a nanometer scale Ieee Transactions On Electron Devices. 59: 2667-2674. DOI: 10.1109/Ted.2012.2206595  1
2012 Das NC, Reed ML, Sampath AV, Shen H, Wraback M, Farrell RM, Iza M, Cruz SC, Lang JR, Young NG, Terao Y, Neufeld CJ, Keller S, Nakamura S, Denbaars SP, ... Mishra UK, et al. Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting Conference Record of the Ieee Photovoltaic Specialists Conference. 3076-3079. DOI: 10.1109/PVSC.2012.6318231  1
2012 Gao F, Chen D, Lu B, Tuller HL, Thompson CV, Keller S, Mishra UK, Palacios T. Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs Ieee Electron Device Letters. 33: 1378-1380. DOI: 10.1109/Led.2012.2206556  1
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Scaled self-aligned N-Polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz Ieee Electron Device Letters. 33: 961-963. DOI: 10.1109/Led.2012.2194130  1
2012 Denninghoff DJ, Dasgupta S, Lu J, Keller S, Mishra UK. Design of high-aspect-ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High f max Ieee Electron Device Letters. 33: 785-787. DOI: 10.1109/Led.2012.2191134  1
2012 Nidhi, Dasgupta S, Lu J, Speck JS, Mishra UK. Self-aligned N-Polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm Ieee Electron Device Letters. 33: 794-796. DOI: 10.1109/Led.2012.2190965  1
2012 Sasikumar A, Arehart A, Kolluri S, Wong MH, Keller S, Denbaars SP, Speck JS, Mishra UK, Ringel SA. Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs Ieee Electron Device Letters. 33: 658-660. DOI: 10.1109/Led.2012.2188710  1
2012 Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456  1
2012 Sasikumar A, Arehart A, Ringel SA, Kaun S, Wong MH, Mishra UK, Speck JS. Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2C.3.1-2C.3.6. DOI: 10.1109/IRPS.2012.6241780  1
2012 Mishra UK. Reliability of AlGaN/GaN HEMTs; an overview of the results generatedunder the ONR DRIFT program Ieee International Reliability Physics Symposium Proceedings. 2C.1.1-2C.1.6. DOI: 10.1109/IRPS.2012.6241778  1
2012 Lal S, Lu J, Thibeault B, Denbaars SP, Mishra UK. Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In 0.53Ga 0.47as channel and III-N drain Device Research Conference - Conference Digest, Drc. 165-166. DOI: 10.1109/DRC.2012.6257041  1
2012 Denninghoff D, Lu J, Laurent M, Ahmadi E, Keller S, Mishra UK. N-polar GaN/InAlN MIS-HEMT with 400-GHz f max Device Research Conference - Conference Digest, Drc. 151-152. DOI: 10.1109/DRC.2012.6256939  1
2012 Zomorrodian V, Mishra UK, York RA. A high-efficiency class F MMIC power amplifier at 4.0 GHz using AlGaN/GaN HEMT technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340065  1
2012 Podolska A, Seeber RM, Mishra UK, Pfleger KDG, Parish G, Nener BD. Detection of biological reactions by AlGaN/GaN biosensor Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 75-76. DOI: 10.1109/COMMAD.2012.6472367  1
2012 Kaun SW, Burke PG, Hoi Wong M, Kyle ECH, Mishra UK, Speck JS. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4773510  1
2012 Keller S, Pfaff N, Denbaars SP, Mishra UK. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101. DOI: 10.1063/1.4764070  1
2012 Hurni CA, Kroemer H, Mishra UK, Speck JS. Capacitance-voltage profiling on polar III-nitride heterostructures Journal of Applied Physics. 112. DOI: 10.1063/1.4757940  1
2012 Mazumder B, Wong MH, Hurni CA, Zhang JY, Mishra UK, Speck JS. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4748116  1
2012 Singisetti U, Hoi Wong M, Mishra UK. Interface roughness scattering in ultra-thin N-polar GaN quantum well channels Applied Physics Letters. 101. DOI: 10.1063/1.4732795  1
2012 Kaun SW, Wong MH, Mishra UK, Speck JS. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4730951  1
2012 Toledo NG, Mishra UK. InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.4723831  1
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  1
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  1
2012 Hodges C, Killat N, Kaun SW, Wong MH, Gao F, Palacios T, Mishra UK, Speck JS, Wolverson D, Kuball M. Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers Applied Physics Letters. 100. DOI: 10.1063/1.3693427  1
2012 Toledo NG, Friedman DJ, Farrell RM, Perl EE, Lin CT, Bowers JE, Speck JS, Mishra UK. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices Journal of Applied Physics. 111. DOI: 10.1063/1.3690907  1
2012 Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. Polarization engineered 1-dimensional electron gas arrays Journal of Applied Physics. 111. DOI: 10.1063/1.3687938  1
2012 Yeluri R, Swenson BL, Mishra UK. Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material Journal of Applied Physics. 111. DOI: 10.1063/1.3687355  1
2012 Hoi Wong M, Wu F, Hurni CA, Choi S, Speck JS, Mishra UK. Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source Applied Physics Letters. 100. DOI: 10.1063/1.3686922  1
2012 Podolska A, Tham S, Hart RD, Seeber RM, Kocan M, Mishra UK, Pfleger KDG, Parish G, Nener BD. Biocompatibility of semiconducting AlGaN/GaN material with living cells Sensors and Actuators, B: Chemical. 169: 401-406. DOI: 10.1016/J.Snb.2012.04.015  1
2012 Lal S, Snow E, Lu J, Swenson B, Keller S, Denbaars SP, Mishra UK. InGaAs-InGaN wafer-bonded current aperture vertical electron transistors (BAVETs) Journal of Electronic Materials. 41: 857-864. DOI: 10.1007/S11664-012-1977-X  1
2012 Fujiwara T, Keller S, Speck JS, Denbaars SP, Mishra UK. Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n +-GaN contact layer Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 891-893. DOI: 10.1002/Pssc.201100419  1
2012 Möreke J, Ťapajna M, Uren MJ, Pei Y, Mishra UK, Kuball M. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Physica Status Solidi (a) Applications and Materials Science. 209: 2646-2652. DOI: 10.1002/Pssa.201228395  1
2012 Keller S, Lu J, Mishra UK, Denbaars SP, Speck JS. Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica Physica Status Solidi (a) Applications and Materials Science. 209: 431-433. DOI: 10.1002/Pssa.201100349  1
2012 Killat N, Uren MJ, Kolluri S, Keller S, Mishra UK, Kuball M. Impact of step edges on trapping behavior in N-polar GaN HEMTs 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012 1
2011 Matioli E, Neufeld C, Iza M, Cruz SC, Al-Heji AA, Chen X, Farrell RM, Keller S, DenBaars S, Mishra U, Nakamura S, Speck J, Weisbuch C. High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters. 98. DOI: 10.1063/1.3540501  1
2008 Kocan M, Umana-Membreno GA, Kilburn MR, Fletcher IR, Recht F, McCarthy L, Mishra UK, Nener BD, Parish G. Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557. DOI: 10.1007/S11664-007-0336-9  1
2008 Ive T, Ben-Yaacov T, Murai A, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 3091-3094. DOI: 10.1002/Pssc.200779197  1
2008 Ive T, Ben-Yaacov T, Asamizu H, Van De Walle CG, Mishra U, DenBaars SP, Speck JS. Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1733-1735. DOI: 10.1002/Pssc.200778612  1
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  1
2005 Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583  1
2004 Murai A, McCarthy L, Mishra U, Denbaars SP, Kruse C, Figge S, Hommel D. Wafer bonding of GaN and ZnSSe for optoelectronic applications Japanese Journal of Applied Physics, Part 2: Letters. 43: L1275-L1277. DOI: 10.1143/Jjap.43.L1275  1
2004 Gao Y, Ben-Yaacov I, Misera U, Hu E. Etched aperture GaN cavet through photoelectrochemical wet etching International Journal of High Speed Electronics and Systems. 14: 245-264. DOI: 10.1142/S0129156404002326  0.8
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films Journal of Applied Physics. 96: 2674-2680. DOI: 10.1063/1.1772884  1
2004 Bae C, Krug C, Lucovsky G, Chakraborty A, Mishra U. Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures Applied Physics Letters. 84: 5413-5415. DOI: 10.1063/1.1767599  1
2004 Lin K, Yu C, Keller S, Mishra U, DenBaars SP, Sun C. Generation of coherent acoustic phonons in GaN‐based p‐n junction Physica Status Solidi (C). 1: 2662-2665. DOI: 10.1002/Pssc.200405404  0.92
2003 Rajan SI, Sarma PS, Mishra US. Demography of Indian aging, 2001-2051. Journal of Aging & Social Policy. 15: 11-30. PMID 14696687 DOI: 10.1300/J031v15n02_02  1
2003 Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682  1
2003 Estrada S, Huntington A, Stonas A, Xing H, Mishra U, DenBaars S, Coldren L, Hu E. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562. DOI: 10.1063/1.1592887  1
2003 Estrada S, Xing H, Stonas A, Huntington A, Mishra U, DenBaars S, Coldren L, Hu E. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822. DOI: 10.1063/1.1541946  1
2003 Gao Y, Stonas AR, Ben-Yaacov I, Mishra U, DenBaars SP, Hu EL. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149. DOI: 10.1049/El:20030018  1
2003 Ambacher O, Eickhoff M, Link A, Hermann M, Stutzmann M, Bernardini F, Fiorentini V, Smorchkova Y, Speck J, Mishra U, Schaff W, Tilak V, Eastman LF. Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures: Part A: Polarization and pyroelectronics Physica Status Solidi C: Conferences. 1878-1907. DOI: 10.1002/Pssc.200303138  1
2002 Mishra US, Ramanathan M. Delivery-related complications and determinants of caesarean section rates in India. Health Policy and Planning. 17: 90-8. PMID 11861590 DOI: 10.1093/heapol/17.1.90  1
2001 Rajan SI, Mishra US, Sarma PS. Health concerns among India's elderly. International Journal of Aging & Human Development. 53: 181-94. PMID 11866377  1
2001 Haberer ED, Woods M, Stonas A, Chen CH, Keller S, Hansen M, Mishra U, DenBaars S, Bowers J, Hu EL. Investigation of sidewall recombination in GaN using a quantum well probe Materials Research Society Symposium - Proceedings. 639: G11.21.1-G11.21.5. DOI: 10.1557/Proc-639-G11.21  1
2001 Chavarkar P, Mishra U. Field effect transistors: FETs and HEMTs Thin Films. 28: 71-145. DOI: 10.1016/S1079-4050(01)80018-1  1
2000 Ramanathan M, Mishra US. Correlates of female sterilization regret in the southern states of India. Journal of Biosocial Science. 32: 547-58. PMID 11075645 DOI: 10.1017/S0021932000005472  1
2000 Zhang Y, Smorchkova Y, Elsass C, Keller S, Ibbetson J, DenBaars S, Mishra U, Singh J. Polarization effects and transport in AlGaN/GaN system Journal of Vacuum Science & Technology B. 18: 2322-2327. DOI: 10.1116/1.1306298  0.92
2000 Krishnamurthy K, Vetury R, Keller S, Mishra U, Rodwell MJW, Long SI. Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers Ieee Journal of Solid-State Circuits. 35: 1285-1292. DOI: 10.1109/4.868037  1
2000 Cho Y, Schmidt TJ, Bidnyk S, Gainer GH, Song JJ, Keller S, Mishra UK, DenBaars SP. Linear and nonlinear optical properties of In x Ga 1 − x N / G a N heterostructures Physical Review B. 61: 7571. DOI: 10.1103/Physrevb.61.7571  0.92
2000 Sun C, Liang J, Wang J, Kao F, Keller S, Mack MP, Mishra U, DenBaars SP. Two-photon absorption study of GaN Applied Physics Letters. 76: 439-441. DOI: 10.1063/1.125780  0.92
2000 Sun C, Huang Y, Liang J, Wang J, Gan K, Kao F, Keller S, Mack MP, Mishra U, Denbaars SP. Large near resonance third order nonlinearity in GaN Optical and Quantum Electronics. 32: 619-640. DOI: 10.1023/A:1007076506723  0.92
1999 Jenkins TJ, Kehias L, Parikh P, Ibbetson J, Mishra U, Docter D, Le M, Pusl J, Widman D. Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology Ieee Journal of Solid-State Circuits. 34: 1239-1245. DOI: 10.1109/4.782082  0.56
1998 Mishra US, Ramanathan M, Rajan SI. Induced abortion potential among Indian women. Social Biology. 45: 278-88. PMID 10085740  1
1998 Chavarkar PM, Zhao L, Keller S, Black KA, Hu E, Speck J, Mishra U. Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants Mrs Proceedings. 535. DOI: 10.1557/Proc-535-21  0.92
1998 Schmid P, Lipka KM, Ibbetson J, Nguyen N, Mishra U, Pond L, Weitzel C, Kohn E. High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs Ieee Electron Device Letters. 19: 225-227. DOI: 10.1109/55.701424  0.68
1998 Hansen PJ, Strausser YE, Erickson AN, Tarsa EJ, Kozodoy P, Brazel EG, Ibbetson JP, Mishra U, Narayanamurti V, DenBaars SP, Speck JS. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 72: 2247-2249. DOI: 10.1063/1.121268  1
1998 Bidnyk S, Schmidt TJ, Cho YH, Gainer GH, Song JJ, Keller S, Mishra UK, Denbaars SP. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Applied Physics Letters. 72: 1623-1625. DOI: 10.1063/1.121133  1
1997 Shi SS, Hu EL, Zhang J, Chang Y, Parikh P, Mishra U. Photoluminescence study of hydrogenated aluminum oxide–semiconductor interface Applied Physics Letters. 70: 1293-1295. DOI: 10.1063/1.118555  0.56
1996 Parikh P, Kiziloglu K, Mondry M, Chavarkar P, Keller B, Denbaars S, Mishra U. Inp-Based Devices And Their Applications For Merged Fet-Hbt Technologies Microwave and Optical Technology Letters. 11: 121-125. DOI: 10.1002/(Sici)1098-2760(19960220)11:3<121::Aid-Mop3>3.0.Co;2-N  0.6
1983 Kohn E, Mishra U, Eastman LF. Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation Ieee Electron Device Letters. 4: 125-127. DOI: 10.1109/Edl.1983.25672  0.68
Show low-probability matches.