Ashok T. Ramu, Ph.D. - Publications

2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Electronics & Photonics

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Liu N, Peters J, Ramu A, Floro JA, Bowers JE, Zebarjadi M. Thermoelectric transport at F4TCNQ–silicon interface Apl Materials. 7: 021104. DOI: 10.1063/1.5050537  0.485
2016 Ramu AT, Halaszynski NI, Peters JD, Meinhart CD, Bowers JE. An electrical probe of the phonon mean-free path spectrum. Scientific Reports. 6: 33571. PMID 27677238 DOI: 10.1038/Srep33571  0.468
2016 Ramu AT, Bowers JE. A Generalized Enhanced Fourier Law Journal of Heat Transfer. 139. DOI: 10.1115/1.4034796  0.472
2015 Ramu AT, Bowers JE. On the solenoidal heat-flux in quasi-ballistic thermal conduction Journal of Applied Physics. 118. DOI: 10.1063/1.4931610  0.46
2015 Ramu AT, Bowers JE. A compact heat transfer model based on an enhanced Fourier law for analysis of frequency-domain thermoreflectance experiments Applied Physics Letters. 106. DOI: 10.1063/1.4923310  0.435
2014 Ramu AT, Ma Y. An enhanced Fourier law derivable from the Boltzmann transport equation and a sample application in determining the mean-free path of nondiffusive phonon modes Journal of Applied Physics. 116. DOI: 10.1063/1.4894087  0.334
2013 Ramu AT, Strukov DB. Thermal modeling of resistive switching devices Ieee Transactions On Electron Devices. 60: 1938-1943. DOI: 10.1109/Ted.2013.2256138  0.339
2013 Preissler N, Bierwagen O, Ramu AT, Speck JS. Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.085305  0.409
2012 Ramu AT, Bowers JE. A "2-omega" technique for measuring anisotropy of thermal conductivity. The Review of Scientific Instruments. 83: 124903. PMID 23278014 DOI: 10.1063/1.4770131  0.495
2012 Ramu AT, Mages P, Zhang C, Imamura JT, Bowers JE. Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material. The Review of Scientific Instruments. 83: 093905. PMID 23020392 DOI: 10.1063/1.4754714  0.531
2012 Ramu AT, Clinger LE, Dongmo PB, Imamura JT, Zide JMO, Bowers JE. Incompatibility of standard III-V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3701951  0.518
2012 Ramu AT, Bowers JE. The impact of commonly used approximations on the computation of the Seebeck coefficient and mobility of polar semiconductors Applied Physics Letters. 101. DOI: 10.1063/1.4764517  0.5
2012 Ramu AT, Bowers JE. Analysis of the "3-Omega" method for substrates and thick films of anisotropic thermal conductivity Journal of Applied Physics. 112. DOI: 10.1063/1.4747836  0.505
2012 Selezneva E, Clinger LE, Ramu AT, Pernot G, Buehl TE, Favaloro T, Bahk JH, Bian Z, Bowers JE, Zide JMO, Shakouri A. Thermoelectric transport in InGaAs with high concentration of rare-earth tbas embedded nanoparticles Journal of Electronic Materials. 41: 1820-1825. DOI: 10.1007/S11664-012-2097-3  0.674
2011 Lu H, Burke PG, Gossard AC, Zeng G, Ramu AT, Bahk JH, Bowers JE. Semimetal/semiconductor nanocomposites for thermoelectrics. Advanced Materials (Deerfield Beach, Fla.). 23: 2377-83. PMID 21751469 DOI: 10.1002/Adma.201100449  0.667
2011 Ramu AT, Cassels LE, Hackman NH, Lu H, Zide JMO, Bowers JE. Thermoelectric transport in the coupled valence-band model Journal of Applied Physics. 109. DOI: 10.1063/1.3537826  0.477
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/J.Jcrysgro.2010.09.078  0.595
2010 Ramu AT, Cassels LE, Hackman NH, Lu H, Zide JMO, Bowers JE. Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials Journal of Applied Physics. 107. DOI: 10.1063/1.3366712  0.501
2010 Bahk JH, Zeng G, Zide JMO, Lu H, Singh R, Liang D, Ramu AT, Burke P, Bian Z, Gossard AC, Shakouri A, Bowers JE. High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding Journal of Electronic Materials. 39: 1125-1132. DOI: 10.1007/S11664-010-1258-5  0.673
2009 Sztein A, Ohta H, Sonoda J, Ramu A, Bowers JE, DenBaars SP, Nakamura S. GaN-Based integrated lateral thermoelectric device for micro-power generation Applied Physics Express. 2. DOI: 10.1143/Apex.2.111003  0.504
2009 Zeng G, Bahk JH, Ramu AT, Bowers JE, Lu H, Gossard AC, Bian Z, Zebarjadi M, Shakouri A. 6 watt segmented power generator modules using Bi2Te3 and (InGaAs)1-x(InAIAs)x elements embedded with ErAs nanoparticles Materials Research Society Symposium Proceedings. 1129: 97-102.  0.573
2008 Zeng G, Bahk J, Ramu AT, Bowers JE, Lu H, Gossard AC, Bian Z, Zebarjadi M, Shakouri A. 6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles Mrs Proceedings. 1129. DOI: 10.1557/Proc-1129-V08-04  0.64
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