Amber C. Abare, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

65 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Bergmann M, Kuhr T, Haberern K, Hussell C, Abare A, Emerson D. Materials and device developments for ultraviolet LEDs and laser diodes Device Research Conference - Conference Digest, Drc. 151-152. DOI: 10.1109/DRC.2004.1367831  0.376
2004 Edmond J, Abare A, Bergman M, Bharathan J, Bunker KL, Emerson D, Haberern K, Ibbetson J, Leung M, Russel P, Slater D. High efficiency GaN-based LEDs and lasers on SiC Journal of Crystal Growth. 272: 242-250. DOI: 10.1016/J.Jcrysgro.2004.08.056  0.344
2001 Sun CK, Chu SW, Tai SP, Keller S, Abare A, Mishra UK, DenBaars SP. Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. Scanning. 23: 182-92. PMID 11405303 DOI: 10.1002/Sca.4950230304  0.44
2001 Sun CK, Huang YK, Liang JC, Abare A, DenBaars SP. Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells Applied Physics Letters. 78: 1201-1203. DOI: 10.1063/1.1350598  0.413
2001 Huang YC, Liang JC, Sun CK, Abare A, DenBaars SP. Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells Applied Physics Letters. 78: 928-930. DOI: 10.1063/1.1347399  0.35
2000 Hansen M, Abare AC, Kozodoy P, Katona TM, Craven MD, Speck JS, Mishra UK, Coldren LA, DenBaars SP. Effect Of AlGaN/GaN Strained Layer Superlattice Period On InGaN MQW Laser Diodes Mrs Internet Journal of Nitride Semiconductor Research. 5: 14-19. DOI: 10.1557/s1092578300004026  0.51
2000 Hansen M, Fini P, Zhao L, Abare AC, Coldren LA, Speck JS, DenBaars SP. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Applied Physics Letters. 76: 529-531. DOI: 10.1557/S1092578300004014  0.536
2000 Berkowicz E, Gershoni D, Bahir G, Lakin E, Shilo D, Zolotoyabko E, Abare AC, Denbaars SP, Coldren LA. Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures Physical Review B. 61: 10994-11008. DOI: 10.1103/Physrevb.61.10994  0.504
2000 Özgür Ü, Bergmann MJ, Casey HC, Everitt HO, Abare AC, Keller S, DenBaars SP. Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells Applied Physics Letters. 77: 109-111. DOI: 10.1063/1.126893  0.437
2000 Haberer ED, Chen C, Abare A, Hansen M, Denbaars S, Coldren L, Mishra U, Hu EL. Channeling as a mechanism for dry etch damage in GaN Applied Physics Letters. 76: 3941-3943. DOI: 10.1063/1.126828  0.519
2000 Hansen M, Fini P, Zhao L, Abare AC, Coldren LA, Speck JS, DenBaars SP. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Applied Physics Letters. 76: 529-531. DOI: 10.1063/1.125808  0.602
2000 Hansen M, Abare AC, Kozodoy P, Katona TM, Craven MD, Speck JS, Mishra UK, Coldren LA, Denbaars SP. Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes Materials Research Society Symposium - Proceedings. 595: W141-W146. DOI: 10.1002/(SICI)1521-396X(199911)176:1<59::AID-PSSA59>3.0.CO;2-B  0.51
2000 Hansen M, Abare AC, Kozodoy P, Katona TM, Craven MD, Speck JS, Mishra UK, Coldren LA, DenBaars SP. ccGaN strained layer superlattice period on InGaN MQW laser diodes Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.316
2000 Abare AC, Denbaars SP, Coldren LA. Distributed feedback laser diodes employing embedded dielectric gratings located above the active region Ieice Transactions On Electronics. 560-563.  0.398
2000 Berkowicz E, Gershoni D, Bahir G, Lakin E, Shilo D, Zolotoyabko E, Abare AC, Denbaars SP, Coldren LA. Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures Physical Review B - Condensed Matter and Materials Physics. 61: 10994-11008.  0.309
2000 Özgür U, Bergmann MJ, Casey HC, Everitt HO, Abare AC, Keller S, DenBaars SP. Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells Applied Physics Letters. 77: 109-111.  0.336
2000 Margalith T, Abare AC, Buchinsky O, Cohen DA, Hansen M, Stonas AR, Mack MP, Hu EL, DenBaars SP, Coldren LA. Nitride-based lasers: Advances in cavity design Proceedings of Spie - the International Society For Optical Engineering. 3944: I/-.  0.7
2000 Chu SW, Sun CK, Tai SP, Abare A, DenBaars SP. Mapping piezoelectric field distribution in InGaN/GaN multiple-quantum-wells by scanning second-harmonic-generation microscopy Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 246-247.  0.359
2000 Hansen M, Fini P, Zhao L, Abare A, Coldren LA, Speck JS, DenBaars SP. Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.446
2000 Sun CK, Liang JC, Yu XY, Abare A, DenBaars SP. Thermionic emission dominated carrier dynamics in InGaN/GaN multiple-quantum-wells Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 257-258.  0.416
1999 Hansen M, Abare AC, Kozodoy P, Katona TM, Craven MD, Speck JS, Mishra UK, Coldren LA, DenBaars SP. Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes Mrs Proceedings. 595. DOI: 10.1557/PROC-595-F99W1.4  0.51
1999 Hansen M, Fini P, Zhao L, Abare A, Coldren LA, Speck JS, DenBaars SP. Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire Mrs Proceedings. 595. DOI: 10.1557/PROC-595-F99W1.3  0.597
1999 Schmidt H, Abare AC, Bowers JE, Denbaars SP, Imamoǧlu A. Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells Applied Physics Letters. 75: 3611-3613. DOI: 10.1063/1.125404  0.412
1999 Sun C, Liang J, Stanton CJ, Abare A, Coldren L, DenBaars SP. Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells Applied Physics Letters. 75: 1249-1251. DOI: 10.1063/1.124657  0.567
1999 Margalith T, Buchinsky O, Cohen DA, Abare AC, Hansen M, DenBaars SP, Coldren LA. Indium tin oxide contacts to gallium nitride optoelectronic devices Applied Physics Letters. 74: 3930-3932. DOI: 10.1063/1.124227  0.687
1999 Margalith T, Buchinsky O, Cohen DA, Abare AC, Hansen M, DenBaars SP, Coldren LA. Indium tin oxide contacts to gallium nitride optoelectronic devices Applied Physics Letters. 74: 3930-3932. DOI: 10.1063/1.124227  0.7
1999 Young DK, Mack MP, Abare AC, Hansen M, Coldren LA, Denbaars SP, Hu EL, Awschalom DD. Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes Applied Physics Letters. 74: 2349-2351. DOI: 10.1063/1.123847  0.613
1999 Abare AC, Hansen M, Speck JS, DenBaars SP, Coldren LA. Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings Electronics Letters. 35: 1559-1560. DOI: 10.1049/El:19991058  0.589
1999 Chichibu SF, Abare AC, Mack MP, Minsky MS, Deguchi T, Cohen D, Kozodoy P, Fleischer SB, Keller S, Speck JS, Bowers JE, Hu E, Mishra UK, Coldren LA, DenBaars SP, et al. Optical properties of InGaN quantum wells Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 298-306. DOI: 10.1016/S0921-5107(98)00359-6  0.557
1999 Young DK, Mack MP, Abare AC, Hansen M, Coldren LA, Denbaars SP, Hu EL, Awschalom DD. Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes Applied Physics Letters. 74: 2349-2351.  0.445
1999 Buchinsky O, Margalith T, Cohen DA, Abare AC, DenBaars SP, Coldren LA. Transparent contact to p-GaN: indium tin oxide/titanium nitride Leos Summer Topical Meeting. 79-80.  0.701
1999 Berkowicz E, Gershoni D, Bahir G, Abare AC, DenBaars SP, Coldren LA. Optical spectroscopy of InGaN/GaN quantum wells Physica Status Solidi (B) Basic Research. 216: 291-300.  0.349
1999 Abare AC, Hansen M, Speck JS, Coldren LA, DenBaars SP. Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings Annual Device Research Conference Digest. 198-199.  0.412
1999 Sun CK, Liang JC, Stanton CJ, Abare A, Coldren L, DenBaars SP. Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells Applied Physics Letters. 75: 1249-1251.  0.347
1998 Minsky MS, Chichibu S, Fleischer SB, Abare AC, Bowers JE, Hu EL, Keller S, Mishra UK, DenBaars SP. Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers Japanese Journal of Applied Physics. 37: L1362-L1364. DOI: 10.1143/Jjap.37.L1362  0.447
1998 Abare AC, Mack MP, Hansen M, Sink RK, Kozodoy P, Keller S, Hu EL, Speck JS, Bowers JE, Mishra UK, Coldren LA, DenBaars SP. Pulsed operation of (Al, Ga, In) N blue laser diodes Proceedings of Spie - the International Society For Optical Engineering. 3284: 103-112. DOI: 10.1117/12.304436  0.479
1998 Abare AC, Mack MP, Hansen M, Sink RK, Kozodoy P, Keller S, Speck JS, Bowers JE, Mishra UK, Coldren LA, DenBaars SP. Cleaved and etched facet nitride laser diodes Ieee Journal On Selected Topics in Quantum Electronics. 4: 505-508. DOI: 10.1109/2944.704109  0.605
1998 Abare AC, MacK MP, Hansen M, Speck JS, Coldren LA, DenBaars SP, Meyer GA, Lehew SL, Cooper GA. Measurement of gain current relations for InGaN multiple quantum wells Applied Physics Letters. 73: 3887-3889. DOI: 10.1063/1.122925  0.623
1998 Chichibu SF, Abare AC, Minsky MS, Keller S, Fleischer SB, Bowers JE, Hu E, Mishra UK, Coldren LA, Denbaars SP, Sota T. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Applied Physics Letters. 73: 2006-2008. DOI: 10.1063/1.122350  0.553
1998 Chichibu S, Cohen DA, MacK MP, Abare AC, Kozodoy P, Minsky M, Fleischer S, Keller S, Bowers JE, Mishra UK, Coldren LA, Clarke DR, Denbaars SP. Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes Applied Physics Letters. 73: 496-498. DOI: 10.1063/1.121912  0.552
1998 Cohen DA, Margalith T, Abare AC, MacK MP, Coldren LA, Denbaars SP, Clarke DR. Catastrophic optical damage in GaInN multiple quantum wells Applied Physics Letters. 72: 3267-3269. DOI: 10.1063/1.121619  0.746
1998 Minsky MS, Fleischer SB, Abare AC, Bowers JE, Hu EL, Keller S, Denbaars SP. Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence Applied Physics Letters. 72: 1066-1068. DOI: 10.1063/1.120966  0.43
1998 Wu XH, Elsass CR, Abare A, MacK M, Keller S, Petroff PM, Denbaars SP, Speck JS, Rosner SJ. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Applied Physics Letters. 72: 692-694. DOI: 10.1063/1.120844  0.392
1998 Mack M, Via G, Abare A, Hansen M, Kozodoy P, Keller S, Speck J, Mishra U, Coldren L, DenBaars S. Improvement of GaN-based laser diode facets by FIB polishing Electronics Letters. 34: 1315. DOI: 10.1049/El:19980886  0.582
1998 Mack MP, Abare AC, Hansen M, Kozodoy P, Keller S, Mishra U, Coldren LA, DenBaars SP. Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD Journal of Crystal Growth. 189: 837-840.  0.444
1998 Cohen DA, Margalith T, Abare AC, Mack MP, Keller S, Coldren LA, DenBaars SP, Clarke DR. Damage from stimulated emission in optically pumped GaInN multiple quantum wells Conference On Lasers and Electro-Optics Europe - Technical Digest. 310.  0.734
1998 Mack MP, Young DK, Abare AC, Hansen M, Coldren LA, Speck JS, Hu EL, Awschalom DD, DenBaars SP. Observation of near field modal emission in InGaN multi-quantum well laser diodes by Near Field Scanning Optical Microscopy Conference Digest - Ieee International Semiconductor Laser Conference. 9-10.  0.345
1998 DenBaars SP, Abare AC, Mack MP, Hansen M, Sink RK, Kozodoy P, Keller S, Speck JS, Bowers JE, Mishra UK, Coldren LA. Blue InGaN MQW laser diodes on sapphire Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 346-347.  0.402
1998 Mack MP, Via GD, Abare AC, Hansen M, Kozodoy P, Keller S, Speck JS, Mishra UK, Coldren LA, DenBaars SP. Improvement of GaN-based laser diode facets by FIB polishing Electronics Letters. 34: 1315-1316.  0.384
1997 Kozlovsky V, Krysa A, Skyasyrsky Y, Popov Y, Abare A, Mack M, Keller S, Mishra UK, Coldren L, DenBaars S, Tiberi MD, George T. Electron Beam Pumped MQW InGaN/GaN Laser Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1557/S1092578300001642  0.574
1997 Sink RK, Abare AC, Kozodoy P, Mack MP, Keller S, Coldren LA, DenBaars SP, Bowers JE. -Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes- Mrs Proceedings. 482. DOI: 10.1557/Proc-482-1197  0.627
1997 Shmagin IK, Muth JF, Kolbas RM, Mack MP, Abare AC, Keller S, Coldren LA, Mishra UK, DenBaars SP. Reconfigurable optical properties in InGaN/GaN quantum wells Applied Physics Letters. 71: 1455-1457. DOI: 10.1063/1.119935  0.549
1997 Kuball M, Jeon E, Song Y, Nurmikko AV, Kozodoy P, Abare A, Keller S, Coldren LA, Mishra UK, DenBaars SP, Steigerwald DA. Gain spectroscopy on InGaN/GaN quantum well diodes Applied Physics Letters. 70: 2580-2582. DOI: 10.1063/1.118925  0.62
1997 Mack M, Abare A, Aizcorbe M, Kozodoy P, Keller S, Mishra UK, Coldren L, DenBaars S. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 2. DOI: 10.1016/S0022-0248(98)00305-4  0.65
1997 Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Abare AC, Coldren LA, Mishra UK, Baars SPD. Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells Journal of Electronic Materials. 26: 325-329. DOI: 10.1007/S11664-997-0172-Y  0.619
1997 Kuball M, Jeon ES, Song YK, Nurmikko AV, Kozody P, Abare A, Keller S, Coldren LA, Mishra UK, DenBaars SP, Steigerwald DA. Gain spectroscopy in InGaN/GaN quantum well diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 339.  0.43
1997 Abare AC, Keller S, Mack MP, Coldren LA, DenBaars SP. Barrier and well width study of InGaN/GaN multiple quantum wells Leos Summer Topical Meeting. 25-26.  0.408
1997 Shmagin IK, Muth JF, Kolbas RM, Krishnankutty S, Keller S, Abare AC, Coldren LA, Mishra UK, Den Baars SP. Photoluminescence characteristics of GaN/InGaN/GaN quantum wells Journal of Electronic Materials. 26: 325-329.  0.418
1997 DenBaars SP, Kozodoy P, Abare A, Mack M, Keller S, Mishra UK, Coldren LA, Imagin S, Kolbas B. MOCVD growth and fabrication of group-III nitrides for high-efficiency MQW LEDs Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 11: 111.  0.389
1997 Shmagin IK, Muth JF, Kolbas RM, Mack MP, Abare AC, Keller S, Coldren LA, Mishra UK, DenBaars SP. Reconfigurable optical properties in InGaN/GaN quantum wells Applied Physics Letters. 71: 1455-1457.  0.304
1997 Kozodoy P, Abare A, Sink RK, Mack M, Keller S, Denbaars SP, Mishra UK, Steigerwald D. MOCVD growth of high output power InGaN multiple-quantum-well light-emitting diode Materials Research Society Symposium - Proceedings. 468: 481-486.  0.413
1997 Sink RK, Abare AC, Kozodoy P, Mack MP, Keller S, Coldren LA, DenBaars SP, Bowers JE. Pulsed operation of cleaved-facet InGaN laser diodes Materials Research Society Symposium - Proceedings. 482: 1197-1202.  0.43
1997 Kuball M, Jeon ES, Song YK, Nurmikko AV, Kozodoy P, Abare A, Keller S, Coldren LA, Mishra UK, DenBaars SP, Steigerwald DA. Gain spectroscopy on InGaN/GaN quantum well diodes Applied Physics Letters. 70: 2580-2582.  0.406
1997 Kozlovsky VI, Krysa AB, Skyasyrsky YK, Popov YM, Abare A, Mack MP, Keller S, Mishra UK, Coldren L, DenBaars S, Tiberi MD, George T. Electron beam pumped MQW InGaN/GaN laser Mrs Internet Journal of Nitride Semiconductor Research. 2: 4d.  0.342
1996 Keller S, Keller BP, Kapolnek D, Abare AC, Masui H, Coldren LA, Mishra UK, Den Baars SP. Growth and characterization of bulk InGaN films and quantum wells Applied Physics Letters. 68: 3147-3149. DOI: 10.1063/1.115806  0.568
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