Year |
Citation |
Score |
2008 |
Wu Y, Jacob-Mitos M, Moore ML, Heikman S. A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Ieee Electron Device Letters. 29: 824-826. DOI: 10.1109/Led.2008.2000921 |
0.451 |
|
2006 |
Palacios T, Chini A, Buttari D, Heikman S, Chakraborty A, Keller S, DenBaars SP, Mishra UK. Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs Ieee Transactions On Electron Devices. 53: 562-565. DOI: 10.1109/Ted.2005.863767 |
0.37 |
|
2006 |
Xu H, Gao S, Heikman S, Long SI, Mishra UK, York RA. A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24. DOI: 10.1109/Lmwc.2005.861355 |
0.413 |
|
2006 |
Gao S, Xu H, Heikman S, Mishra UK, York RA. Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30. DOI: 10.1109/Lmwc.2005.861353 |
0.383 |
|
2006 |
Dora Y, Chakraborty A, Heikman S, McCarthy L, Keller S, DenBaars SP, Mishra UK. Effect of ohmic contacts on buffer leakage of GaN transistors Ieee Electron Device Letters. 27: 529-531. DOI: 10.1109/Led.2006.876306 |
0.507 |
|
2006 |
Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. AlGaN/GaN high electron mobility transistors with InGaN back-barriers Ieee Electron Device Letters. 27: 13-15. DOI: 10.1109/Led.2005.860882 |
0.516 |
|
2006 |
Palacios T, Shen L, Keller S, Chakraborty A, Heikman S, DenBaars SP, Mishra UK, Liberis J, Kiprijanovic O, Matulionis A. Nitride-based high electron mobility transistors with a GaN spacer Applied Physics Letters. 89. DOI: 10.1063/1.2335514 |
0.499 |
|
2006 |
Heikman S, Keller S, Mishra UK. Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation Journal of Crystal Growth. 293: 335-343. DOI: 10.1016/J.Jcrysgro.2006.05.019 |
0.404 |
|
2005 |
Heikman S, Keller S, Newman S, Wu Y, Moe C, Moran B, Schmidt M, Mishra UK, Speck JS, Denbaars SP. Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407. DOI: 10.1143/Jjap.44.L405 |
0.712 |
|
2005 |
Hansen PJ, Vaithyanathan V, Wu Y, Mates T, Heikman S, Mishra UK, York RA, Schlom DG, Speck JS. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 499-506. DOI: 10.1116/1.1868672 |
0.414 |
|
2005 |
Sanabria C, Xu H, Palacios T, Chakraborty A, Heikman S, Mishra UK, York RA. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 53: 762-768. DOI: 10.1109/Tmtt.2004.840578 |
0.372 |
|
2005 |
Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. Influence of the dynamic access resistance in the gm and f T linearity of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 52: 2117-2122. DOI: 10.1109/Ted.2005.856180 |
0.429 |
|
2005 |
Sanabria C, Xu H, Heikman S, Mishra UK, York RA. A GaN differential oscillator with improved harmonic performance Ieee Microwave and Wireless Components Letters. 15: 463-465. DOI: 10.1109/Lmwc.2005.851563 |
0.317 |
|
2005 |
Dora Y, Suh C, Chakraborty A, Heikman S, Chandrasekaran S, Mehrotra V, Mishra UK. Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 2005: 191-192. DOI: 10.1109/DRC.2005.1553115 |
0.349 |
|
2005 |
Palacios T, Shen L, Keller S, Chakraborty A, Heikman S, Buttari D, DenBaars SP, Mishra UK. Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering Physica Status Solidi (a) Applications and Materials Science. 202: 837-840. DOI: 10.1002/Pssa.200461563 |
0.467 |
|
2004 |
Xu H, Sanabria C, Chini A, Wei Y, Heikman S, Keller S, Mishra UK, York RA. A new field-plated GaN HEMT structure with improved power and noise performance International Journal of High Speed Electronics and Systems. 14: 810-815. DOI: 10.1142/S0129156404002879 |
0.353 |
|
2004 |
Hansen PJ, Shen L, Wu Y, Stonas A, Terao Y, Heikman S, Buttari D, Taylor JR, DenBaars SP, Mishra UK, York RA, Speck JS. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2479-2485. DOI: 10.1116/1.1800352 |
0.405 |
|
2004 |
Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1145-1149. DOI: 10.1116/1.1752907 |
0.369 |
|
2004 |
Rajan S, Waltereit P, Poblenz C, Heikman SJ, Green DS, Speck JS, Mishra UK. Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE Ieee Electron Device Letters. 25: 247-249. DOI: 10.1109/Led.2004.826977 |
0.513 |
|
2004 |
Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs Ieee Electron Device Letters. 25: 229-231. DOI: 10.1109/Led.2004.826525 |
0.451 |
|
2004 |
Xing H, Dora Y, Chini A, Heikman S, Keller S, Mishra UK. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates Ieee Electron Device Letters. 25: 161-163. DOI: 10.1109/Led.2004.824845 |
0.462 |
|
2004 |
Chini A, Wittich J, Heikman S, Keller S, DenBaars SP, Mishra UK. Power and Linearity Characteristics of GaN MISFETs on Sapphire Substrate Ieee Electron Device Letters. 25: 55-57. DOI: 10.1109/Led.2003.822668 |
0.419 |
|
2004 |
Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars SP, Mishra UK. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs without Surface Passivation Ieee Electron Device Letters. 25: 7-9. DOI: 10.1109/Led.2003.821673 |
0.491 |
|
2004 |
Xie S, Paidi V, Heikman S, Shen L, Chini A, Mishra UK, Rodwell MJW, Long SI. High linearity GaN HEMT power amplifier with pre-linearization gate diode International Journal of High Speed Electronics and Systems. 14: 847-852. DOI: 10.1109/Lechpd.2004.1549698 |
0.408 |
|
2004 |
Shen L, Buttari D, Heikman S, Chini A, Coffie R, McCarthy L, Chakraborty A, Keller S, DenBaars SP, Mishra UK. Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2004.1367773 |
0.419 |
|
2004 |
Chini A, Buttari D, Coffie R, Shen L, Palacios T, Heikman S, Chakraborty A, Keller S, Mishra UK. Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 33-34. DOI: 10.1109/DRC.2004.1367770 |
0.363 |
|
2004 |
Chini A, Buttari D, Coffie R, Heikman S, Keller S, Mishra UK. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters. 40: 73-74. DOI: 10.1049/El:20040017 |
0.43 |
|
2004 |
Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, Denbaars SP, Mishra UK. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425. DOI: 10.1007/S11664-004-0195-6 |
0.517 |
|
2004 |
Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, Denbaars SP, Mishra UK. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425. |
0.442 |
|
2003 |
Heikman S, Keller S, DenBaars SP, Mishra UK, Bertram F, Christen J. Non-planar Selective Area Growth and Characterization of GaN and AlGaN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42: 6276-6283. DOI: 10.1143/Jjap.42.6276 |
0.45 |
|
2003 |
Shen L, Smochkova IP, Green DS, Heikman S, Mishra UK. GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 540-543. DOI: 10.1116/1.1527646 |
0.477 |
|
2003 |
Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682 |
0.62 |
|
2003 |
Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682 |
0.526 |
|
2003 |
Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. High performance AlGaN/GaN HEMTs with a field plated gate structure 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 434-435. DOI: 10.1109/ISDRS.2003.1272169 |
0.339 |
|
2003 |
Jena D, Heikman S, Speck JS, Gossard A, Mishra UK, Link A, Ambacher O. Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN Physical Review B - Condensed Matter and Materials Physics. 67: 1533061-1533064. DOI: 10.1103/Physrevb.67.153306 |
0.364 |
|
2003 |
Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S, Mishra UK. Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781. DOI: 10.1063/1.1632035 |
0.328 |
|
2003 |
Heikman S, Keller S, Green DS, DenBaars SP, Mishra UK. High conductivity modulation doped AlGaN/GaN multiple channel heterostructures Journal of Applied Physics. 94: 5321-5325. DOI: 10.1063/1.1610244 |
0.392 |
|
2003 |
Heikman S, Keller S, Wu Y, Speck JS, DenBaars SP, Mishra UK. Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures Journal of Applied Physics. 93: 10114-10118. DOI: 10.1063/1.1577222 |
0.513 |
|
2003 |
Coffie R, Shen L, Parish G, Chini A, Buttari D, Heikman S, Keller S, Mishra UK. Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz Electronics Letters. 39: 1419-1420. DOI: 10.1049/El:20030872 |
0.479 |
|
2003 |
Chini A, Coffie R, Meneghesso G, Zanoni E, Buttari D, Heikman S, Keller S, Mishra UK. 2.1 A/mm current density AlGaN/GaN HEMT Electronics Letters. 39: 625-626. DOI: 10.1049/El:20030382 |
0.471 |
|
2003 |
Jena D, Heikman S, Speck JS, Mishra UK, Link A, Ambacher O. Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN Physica Status Solidi C: Conferences. 2339-2342. DOI: 10.1002/Pssc.200303545 |
0.312 |
|
2003 |
Heikman S, Keller S, DenBaars SP, Mishra UK. Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition Physica Status Solidi C: Conferences. 2557-2561. DOI: 10.1002/Pssc.200303500 |
0.368 |
|
2003 |
Bertram F, Christen J, Heikman S, Keller S, DenBaars SP, Mishra UK. Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy Physica Status Solidi (a) Applied Research. 200: 183-186. DOI: 10.1002/Pssa.200303460 |
0.429 |
|
2002 |
Coffie R, Buttari D, Heikman S, Keller S, Chini A, Shen L, Mishra UK. p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) Ieee Electron Device Letters. 23: 588-590. DOI: 10.1109/Led.2002.803764 |
0.482 |
|
2002 |
Jiménez A, Buttari D, Jena D, Coffíe R, Heikman S, Zhang NQ, Shen L, Calleja E, Muñoz E, Speck J, Mishra UK. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs Ieee Electron Device Letters. 23: 306-308. DOI: 10.1109/Led.2002.1004217 |
0.364 |
|
2002 |
Ben-Yaacov I, Seck YK, Heikman S, DenBaars SP, Mishra UK. AlGaN/GaN current aperture vertical electron transistors Device Research Conference - Conference Digest, Drc. 2002: 31-32. DOI: 10.1109/DRC.2002.1029492 |
0.331 |
|
2002 |
Coffie R, Heikman S, Buttari D, Keller S, Chini A, Shen L, Zhang N, Jimenez A, Jena D, Mishra UK. P-GaN/AlGaN/GaN high electron mobility transistors Device Research Conference - Conference Digest, Drc. 2002: 25-26. DOI: 10.1109/DRC.2002.1029489 |
0.445 |
|
2002 |
Buttari D, Chini A, Meneghesso G, Zanoni E, Chavarkar P, Coffie R, Zhang NQ, Heikman S, Shen L, Xing H, Zheng C, Mishra UK. Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 118-120. DOI: 10.1109/55.988810 |
0.406 |
|
2002 |
Buttari D, Chini A, Meneghesso G, Zanoni E, Moran B, Heikman S, Zhang NQ, Shen L, Coffie R, DenBaars SP, Mishra UK. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 76-78. DOI: 10.1109/55.981311 |
0.569 |
|
2002 |
Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck JS, Mishra UK, Smorchkova I. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Applied Physics Letters. 81: 4395-4397. DOI: 10.1063/1.1526161 |
0.421 |
|
2002 |
Heikman S, Keller S, Denbaars SP, Mishra UK. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition Applied Physics Letters. 81: 439-441. DOI: 10.1063/1.1490396 |
0.372 |
|
2002 |
Keller S, Heikman S, Shen L, Smorchkova IP, Denbaars SP, Mishra UK. GaN-GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design Applied Physics Letters. 80: 4387-4389. DOI: 10.1063/1.1484551 |
0.486 |
|
2002 |
Smorchkova IP, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars SP, Speck JS, Mishra UK. Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] Journal of Applied Physics. 91: 4780-4780. DOI: 10.1063/1.1457534 |
0.571 |
|
2002 |
Buttari D, Heikman S, Keller S, Mishra UK. Digital Etching for Highly Reproducible Low Damage Gate Recessing on AlGaN/GaN HEMTs Proceedings Ieee Lester Eastman Conference On High Performance Devices. 461-469. |
0.328 |
|
2001 |
Heikman S, DenBaars SP, Mishra UK. Selective area mass transport regrowth of gallium nitride Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 565-566. DOI: 10.1143/Jjap.40.565 |
0.376 |
|
2001 |
Shen L, Heikman S, Moran B, Coffie R, Zhang NQ, Buttari D, Smorchkova IP, Keller S, DenBaars SP, Mishra UK. AlGaN/AlN/GaN high-power microwave HEMT Ieee Electron Device Letters. 22: 457-459. DOI: 10.1109/55.954910 |
0.634 |
|
2001 |
Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317 |
0.515 |
|
2001 |
Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters. 79: 3449-3451. DOI: 10.1063/1.1420573 |
0.5 |
|
2001 |
Smorchkova IP, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars SP, Speck JS, Mishra UK. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics. 90: 5196-5201. DOI: 10.1063/1.1412273 |
0.649 |
|
2001 |
Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 775-778. DOI: 10.1002/1521-396X(200112)188:2<775::Aid-Pssa775>3.0.Co;2-S |
0.487 |
|
2001 |
Heikman S, Keller S, Moran B, Coffie R, Denbaars SP, Mishra UK. Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN Physica Status Solidi (a) Applied Research. 188: 355-358. DOI: 10.1002/1521-396X(200111)188:1<355::Aid-Pssa355>3.0.Co;2-H |
0.599 |
|
2000 |
Zhang N-, Keller S, Parish G, Heikman S, DenBaars SP, Mishra UK. High breakdown GaN HEMT with overlapping gate structure Ieee Electron Device Letters. 21: 421-423. DOI: 10.1109/55.863096 |
0.439 |
|
2000 |
Xu J, Keller S, Parish G, Heikman S, Mishra U, York R. A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier Ieee Transactions On Microwave Theory and Techniques. 48: 2573-2578. DOI: 10.1109/22.899015 |
0.442 |
|
2000 |
Smorchkova IP, Keller S, Heikman S, Elsass CR, Heying B, Fini P, Speck JS, Mishra UK. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers Applied Physics Letters. 77: 3998-4000. DOI: 10.1063/1.1332408 |
0.511 |
|
2000 |
Zhang NQ, Keller S, Parish G, Heikman S, DenBaars SP, Mishra UK. High breakdown GaN HEMT with overlapping gate structure Ieee Electron Device Letters. 21: 373-375. |
0.344 |
|
2000 |
Green DS, Heikman S, Heying B, Tavernier PR, Speck JS, Clarke DR, Den Baars SP, Mishra UK. Molecular beam epitaxy of InGaN/GaN heterostructures of green luminescence Ieee International Symposium On Compound Semiconductors, Proceedings. 371-376. |
0.304 |
|
2000 |
Smorchkova IP, Keller S, Heikman S, Elsass CR, Heying B, Fini P, Speck JS, Mishra UK. Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers Applied Physics Letters. 77: 3998-4000. |
0.66 |
|
1999 |
Xu JJ, Wu Y, Keller S, Heikman S, Thibeault BJ, Mishra UK, York RA. 1 - 8-GHz GaN-based power amplifier using flip-chip bonding Ieee Microwave and Guided Wave Letters. 9: 277-279. DOI: 10.1109/75.774146 |
0.424 |
|
1999 |
Keller S, Parish G, Fini PT, Heikman S, Chen C, Zhang N, DenBaars SP, Mishra UK, Wu Y. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures Journal of Applied Physics. 86: 5850-5857. DOI: 10.1063/1.371602 |
0.683 |
|
1999 |
Keller S, Parish G, Fini PT, Heikman S, Chen CH, Zhang N, DenBaars SP, Mishra UK, Wu YF. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures Journal of Applied Physics. 86: 5850-5857. |
0.689 |
|
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