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Brendan J. Moran, Ph.D. - Publications

Affiliations: 
2004 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 David A, Moran B, McGroddy K, Matioli E, Hu EL, Denbaars SP, Nakamura S, Weisbuch C. GaNInGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth Applied Physics Letters. 92. DOI: 10.1063/1.2898513  0.444
2006 Arehart AR, Moran B, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics Journal of Applied Physics. 100. DOI: 10.1063/1.2219985  0.441
2006 David A, Fujii T, Moran B, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. Photonic crystal laser lift-off GaN light-emitting diodes Applied Physics Letters. 88: 133514. DOI: 10.1063/1.2189159  0.36
2006 Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, DenBaars SP, Emerson D. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753. DOI: 10.1007/S11664-006-0133-X  0.699
2005 Moe CG, Masui H, Schmidt MC, Shen L, Moran B, Newman S, Vampola K, Mates T, Keller S, Speck JS, Denbaars SP, Hussel C, Emerson D. Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide Japanese Journal of Applied Physics, Part 2: Letters. 44: L502-L504. DOI: 10.1143/Jjap.44.L502  0.694
2005 Heikman S, Keller S, Newman S, Wu Y, Moe C, Moran B, Schmidt M, Mishra UK, Speck JS, Denbaars SP. Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407. DOI: 10.1143/Jjap.44.L405  0.747
2004 McCarthy LS, Zhang NQ, Xing H, Moran B, DenBaars S, Mishra UK. High voltage AlGaN/GaN heterojunction transistors International Journal of High Speed Electronics and Systems. 14: 225-243. DOI: 10.1142/S0129156404002314  0.63
2004 Armstrong A, Arehart AR, Moran B, DenBaars SP, Mishra UK, Speck JS, Ringel SA. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 84: 374-376. DOI: 10.1063/1.1643540  0.366
2004 Moran B, Wu F, Romanov AE, Mishra UK, Denbaars SP, Speck JS. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer Journal of Crystal Growth. 273: 38-47. DOI: 10.1016/J.Jcrysgro.2004.08.012  0.498
2003 Armstrong A, Arehart AR, Ringel SA, Moran B, DenBaars SP, Mishra UK, Speck JS. Identification of Carbon-related Bandgap States in GaN Grown by MOCVD Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.38  0.329
2003 Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682  0.691
2003 Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682  0.634
2002 Buttari D, Chini A, Meneghesso G, Zanoni E, Moran B, Heikman S, Zhang NQ, Shen L, Coffie R, DenBaars SP, Mishra UK. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 76-78. DOI: 10.1109/55.981311  0.678
2002 Smorchkova IP, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars SP, Speck JS, Mishra UK. Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] Journal of Applied Physics. 91: 4780-4780. DOI: 10.1063/1.1457534  0.632
2001 Shen L, Heikman S, Moran B, Coffie R, Zhang NQ, Buttari D, Smorchkova IP, Keller S, DenBaars SP, Mishra UK. AlGaN/AlN/GaN high-power microwave HEMT Ieee Electron Device Letters. 22: 457-459. DOI: 10.1109/55.954910  0.706
2001 Smorchkova IP, Chen L, Mates T, Shen L, Heikman S, Moran B, Keller S, DenBaars SP, Speck JS, Mishra UK. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics. 90: 5196-5201. DOI: 10.1063/1.1412273  0.695
2001 Marchand H, Zhao L, Zhang N, Moran B, Coffie R, Mishra UK, Speck JS, DenBaars SP, Freitas JA. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors Journal of Applied Physics. 89: 7846-7851. DOI: 10.1063/1.1372160  0.661
2001 Heikman S, Keller S, Moran B, Coffie R, Denbaars SP, Mishra UK. Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN Physica Status Solidi (a) Applied Research. 188: 355-358. DOI: 10.1002/1521-396X(200111)188:1<355::Aid-Pssa355>3.0.Co;2-H  0.701
2001 Parish G, Hansen M, Moran B, Keller S, Denbaars SP, Mishra UK. Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 297-300. DOI: 10.1002/1521-396X(200111)188:1<297::Aid-Pssa297>3.0.Co;2-Y  0.679
2001 Zhang N-, Moran B, DenBaars SP, Mishra UK, Wang XW, Ma TP. Kilovolt AlGaN/GaN HEMTs as Switching Devices Physica Status Solidi (a). 188: 213-217. DOI: 10.1002/1521-396X(200111)188:1<213::Aid-Pssa213>3.0.Co;2-8  0.473
2000 Limb JB, Xing H, Moran B, McCarthy L, DenBaars SP, Mishra UK. High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage Applied Physics Letters. 76: 2457-2459. DOI: 10.1063/1.126375  0.425
2000 Moran B, Hansen M, Craven MD, Speck JS, DenBaars SP. Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates Journal of Crystal Growth. 221: 301-304. DOI: 10.1016/S0022-0248(00)00704-1  0.763
1999 Fini P, Marchand H, Ibbetson JP, Moran B, Zhao L, Denbaars SP, Speck JS, Mishra UK. Maskless lateral epitaxial overgrowth of GaN on sapphire Materials Research Society Symposium - Proceedings. 572: 315-320. DOI: 10.1557/Proc-572-315  0.734
1999 Fini P, Zhao L, Moran B, Hansen M, Marchand H, Ibbetson JP, DenBaars SP, Mishra UK, Speck JS. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers Applied Physics Letters. 75: 1706-1708. DOI: 10.1063/1.124796  0.455
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