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Mathew C. Schmidt, Ph.D. - Publications

Affiliations: 
2008 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Melo T, Hu YL, Weisbuch C, Schmidt MC, David A, Ellis B, Poblenz C, Lin YD, Krames MR, Raring JW. Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024015  0.354
2012 Raring JW, Schmidt MC, Poblenz C, Huang H, Bai C, Rudy P, Speck JS, DenBaars SP, Nakamura S. Recent progress in green and blue ingan laser diodes for projection display applications Proceedings of the International Display Workshops. 3: 1496-1497.  0.504
2011 Schmidt MC, Poblenz C, Chang YC, Li B, Mondry MJ, Iveland J, Krames MR, Craig R, Raring JW, Speck JS, DenBaars SP, Nakamura S. High performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 8039. DOI: 10.1117/12.872023  0.63
2011 Raring JW, Schmidt MC, Poblenz C, Li B, Chang YC, Mondry MJ, Lin YD, Krames MR, Craig R, Speck JS, Denbaars SP, Nakamura S. High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.872023  0.354
2011 Raring JW, Schmidt MC, Poblenz C, Lin Y, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates Ieee Photonic Society 24th Annual Meeting, Pho 2011. 503-504. DOI: 10.1109/Pho.2011.6110781  0.55
2011 Farrell RM, Haeger DA, Hsu PS, Schmidt MC, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes Applied Physics Letters. 99. DOI: 10.1063/1.3656970  0.568
2011 Raring JW, Schmidt MC, Poblenz C, Lin Y, Goutain E, Huang H, Bai C, Rudy P, Speck JS, Denbaars SP, Nakamura S. Green and blue InGaN-based laser diodes for display applications Proceedings of the International Display Workshops. 3: 2061-2063.  0.524
2011 Raring JW, Schmidt MC, Poblenz C, Mondry MJ, Rudy P, Speck JS, DenBaars SP, Nakamura S. Invited paper: Progress in green and blue laser diodes and their application in pico projection systems 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 2: 677-680.  0.474
2010 Raring JW, Schmidt MC, Poblenz C, Chang YC, Mondry MJ, Li B, Iveland J, Walters B, Krames MR, Craig R, Rudy P, Speck JS, DenBaars SP, Nakamura S. High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.112101  0.468
2010 Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Kebort D, Chang YC, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686. DOI: 10.1117/12.849713  0.604
2010 Raring JW, Hall EM, Schmidt MC, Poblenz C, Li B, Pfister N, Feezell DF, Craig R, Speck JS, DenBaars SP, Nakamura S. High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.840783  0.598
2009 Feezell DF, Schmidt MC, DenBaars SP, Nakamura S. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes Mrs Bulletin. 34: 318-323. DOI: 10.1557/Mrs2009.93  0.47
2009 Tamboli AC, Schmidt MC, Hirai A, Denbaars SP, Hu EL. Photoelectrochemical undercut etching of m-Plane GaN for microdisk applications Journal of the Electrochemical Society. 156: H767-H771. DOI: 10.1149/1.3184156  0.453
2009 Tamboli AC, Schmidt MC, Rajan S, Speck JS, Mishra UK, Denbaars SP, Hu EL. Smooth top-down photoelectrochemical etching of m -plane GaN Journal of the Electrochemical Society. 156: H47-H51. DOI: 10.1149/1.3005978  0.403
2009 Tamboli AC, Schmidt MC, Hirai A, Denbaars SP, Hu EL. Observation of whispering gallery modes in nonpolar m -plane GaN microdisks Applied Physics Letters. 94. DOI: 10.1063/1.3160550  0.359
2009 Garrett GA, Shen H, Wraback M, Tyagi A, Schmidt MC, Speck JS, DenBaars SP, Nakamaura S. Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S800-S803. DOI: 10.1002/Pssc.200880974  0.385
2009 Masui H, Schmidt M, Fellows N, Yamada H, Iso K, Speck JS, Nakamura S, DenBaars SP. Recent progress in nonpolar LEDs as polarized light emitters Physica Status Solidi (a) Applications and Materials Science. 206: 203-205. DOI: 10.1002/Pssa.200880407  0.685
2008 Masui H, Ive T, Schmidt MC, Fellows NN, Sato H, Asamizu H, Nakamura S, DenBaars SP. Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes Japanese Journal of Applied Physics. 47: 2112-2118. DOI: 10.1143/Jjap.47.2112  0.694
2008 Garrett GA, Shen H, Wraback M, Tyagi A, Schmidt MC, Jia Z, Speck JS, DenBaars SP, Nakamura S. Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551107  0.341
2008 Masui H, Kroemer H, Schmidt MC, Kim KC, Fellows NN, Nakamura S, DenBaars SP. Electroluminescence efficiency of (1 0 1̄ 0)-oriented InGaN-based light-emitting diodes at low temperature Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/082001  0.702
2008 Kim KC, Schmidt MC, Wu F, McLaurin MB, Hirai A, Nakamura S, Denbaars SP, Speck JS. Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Applied Physics Letters. 93. DOI: 10.1063/1.2908978  0.377
2007 Farrell RM, Feezell DF, Schmidt MC, Haeger DA, Kelchner KM, Iso K, Yamada H, Saito M, Fujito K, Cohen DA, Speck JS, Denbaars SP, Nakamura S. Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L761-L763. DOI: 10.1143/Jjap.46.L761  0.743
2007 Masui H, Sato H, Asamizu H, Schmidt MC, Fellows NN, Nakamura S, DenBaars SP. Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents Japanese Journal of Applied Physics, Part 2: Letters. 46: L627-L629. DOI: 10.1143/Jjap.46.L627  0.691
2007 Feezell DF, Schmidt MC, Farrell RM, Kim KC, Saito M, Fujito K, Cohen DA, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L284-L286. DOI: 10.1143/Jjap.46.L284  0.67
2007 Schmidt MC, Kim KC, Farrell RM, Feezell DF, Cohen DA, Saito M, Fujito K, Speck JS, DenBaars SP, Nakamura S. Demonstration of nonpolar m-plane InGaN/GaN laser diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L190-L191. DOI: 10.1143/Jjap.46.L190  0.48
2007 Schmidt MC, Kim KC, Sato H, Fellows N, Masui H, Nakamura S, DenBaars SP, Speck JS. High power and high external efficiency m-plane InGaN light emitting diodes Japanese Journal of Applied Physics, Part 2: Letters. 46: L126-L128. DOI: 10.1143/Jjap.46.L126  0.755
2007 Masui H, Schmidt MC, Kim KC, Chakraborty A, Nakamura S, DenBaars SP. Electrical characteristics of nonpolar InGaN-based light-emitting diodes evaluated at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 7309-7310. DOI: 10.1143/Jjap.46.7309  0.67
2007 Kim KC, Schmidt MC, Sato H, Wu F, Fellows N, Jia Z, Saito M, Nakamura S, Denbaars SP, Speck JS, Fujito K. Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2805029  0.561
2007 Feezell DF, Farrell RM, Schmidt MC, Yamada H, Ishida M, Denbaars SP, Cohen DA, Nakamura S. Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers Applied Physics Letters. 90. DOI: 10.1063/1.2736478  0.326
2007 Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126  0.637
2007 Kim KC, Schmidt MC, Sato H, Wu F, Fellows N, Saito M, Fujito K, Speck JS, Nakamura S, DenBaars SP. Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs Physica Status Solidi - Rapid Research Letters. 1: 125-127. DOI: 10.1002/Pssr.200701061  0.536
2006 Masui H, Schmidt MC, Chakraborty A, Nakamura S, DenBaars SP. Electroluminescent and electrical characteristics of polar and nonpolar InGaN/GaN light-emitting diodes at low temperature Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 7661-7666. DOI: 10.1143/Jjap.45.7661  0.689
2006 Moe CG, Schmidt MC, Masui H, Chakraborty A, Vampola K, Newman S, Moran B, Shen L, Mates T, Keller S, DenBaars SP, Emerson D. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Journal of Electronic Materials. 35: 750-753. DOI: 10.1007/S11664-006-0133-X  0.729
2005 Moe CG, Masui H, Schmidt MC, Shen L, Moran B, Newman S, Vampola K, Mates T, Keller S, Speck JS, Denbaars SP, Hussel C, Emerson D. Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide Japanese Journal of Applied Physics, Part 2: Letters. 44: L502-L504. DOI: 10.1143/Jjap.44.L502  0.738
2005 Heikman S, Keller S, Newman S, Wu Y, Moe C, Moran B, Schmidt M, Mishra UK, Speck JS, Denbaars SP. Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L405-L407. DOI: 10.1143/Jjap.44.L405  0.74
2005 Cohen DA, Masui H, Schmidt M, Brendan-Moran, Denbaars SP. Chip-scale fluorescence sensors Proceedings of Spie - the International Society For Optical Engineering. 6008. DOI: 10.1117/12.632493  0.691
2004 Katona TM, Margalith T, Moe C, Schmidt MC, Nakamura S, Speck JS, DenBaars SP. Growth and Fabrication of Short Wavelength UV LEDs Proceedings of Spie - the International Society For Optical Engineering. 5187: 250-259.  0.797
2003 Katona TM, Schmidt MC, Margalith T, Moe C, Tamura H, Sato H, Funaoka C, Underwood R, Nakamura S, Speck JS, DenBaars SP. 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction Physica Status Solidi C: Conferences. 2206-2209. DOI: 10.1002/Pssc.200303397  0.796
2003 DenBaars SP, Katona T, Cantu P, Hanlon A, Keller S, Schmidt M, Margalith T, Pattisson M, Moe C, Speck J, Nakamura S. GaN Based High Brightness LEDs and UV LEDs Technical Digest - International Electron Devices Meeting. 385-388.  0.788
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