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Ingrid L. Koslow, Ph.D. - Publications

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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26 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Freytag S, Winkler M, Goldhahn R, Wernicke T, Rychetsky M, Koslow IL, Kneissl M, Dinh DV, Corbett B, Parbrook PJ, Feneberg M. Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes Applied Physics Letters. 116: 62106. DOI: 10.1063/1.5134952  0.437
2019 Susilo N, Schilling M, Narodovitch M, Yao H, Li X, Witzigmann B, Enslin J, Guttmann M, Roumeliotis GG, Rychetsky M, Koslow I, Wernicke T, Niermann T, Lehmann M, Kneissl M. Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab09Dd  0.312
2018 Mounir C, Koslow IL, Wernicke T, Kneissl M, Kuritzky LY, Adamski NL, Oh SH, Pynn CD, DenBaars SP, Nakamura S, Speck JS, Schwarz UT. On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells Journal of Applied Physics. 123: 85705. DOI: 10.1063/1.5008263  0.457
2016 Mounir C, Schwarz UT, Koslow IL, Kneissl M, Wernicke T, Schimpke T, Strassburg M. Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 -x N /GaN quantum wells Physical Review B. 93: 235314. DOI: 10.1103/Physrevb.93.235314  0.417
2016 Dinh DV, Corbett BM, Parbrook PJ, Koslow IL, Rychetsky M, Guttmann M, Wernicke T, Kneissl M, Mounir C, Schwarz U, Glaab J, Netzel C, Brunner F, Weyers M. Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes Journal of Applied Physics. 120: 135701. DOI: 10.1063/1.4963757  0.556
2016 Rychetsky M, Koslow I, Avinc B, Rass J, Wernicke T, Bellmann K, Sulmoni L, Hoffmann V, Weyers M, Wild J, Zweck J, Witzigmann B, Kneissl M. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements Journal of Applied Physics. 119: 95713. DOI: 10.1063/1.4943185  0.377
2016 Rychetsky M, Koslow IL, Wernicke T, Rass J, Hoffmann V, Weyers M, Kneissl M. Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg Physica Status Solidi (B) Basic Research. 253: 169-173. DOI: 10.1002/Pssb.201552407  0.392
2015 Alamé S, Quezada AN, Skuridina D, Reich C, Henning D, Frentrup M, Wernicke T, Koslow I, Kneissl M, Esser N, Vogt P. Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells Materials Science in Semiconductor Processing. DOI: 10.1016/J.Mssp.2016.02.013  0.455
2014 Koslow IL, McTaggart C, Wu F, Nakamura S, Speck JS, DenBaars SP. Improved performance of (2021) long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1-xN buffer layers Applied Physics Express. 7. DOI: 10.7567/Apex.7.031003  0.688
2014 Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027  0.714
2012 Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693  0.709
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.777
2012 Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465  0.715
2012 Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850  0.738
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2021 Cleo: Science and Innovations, Cleo_si 2012. CTu2N.2.  0.7
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.703
2011 Richardson JJ, Koslow I, Pan CC, Zhao Y, Ha JS, Den Baars SP. Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes Applied Physics Express. 4. DOI: 10.1143/Apex.4.126502  0.765
2011 Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113  0.711
2011 Tanaka S, Zhao Y, Koslow I, Pan CC, Chen HT, Sonoda J, Denbaars SP, Nakamura S. Droop improvement in high current range on PSS-LEDs Electronics Letters. 47: 335-336. DOI: 10.1049/El.2010.3306  0.716
2010 Pan CC, Koslow I, Sonoda J, Ohta H, Ha JS, Shuji Nakamura, DenBaars SP. Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080210  0.676
2010 Koslow IL, Sonoda J, Chung RB, Pan CC, Brinkley S, Ohta H, Nakamura S, DenBaars SP. High power and high efficiency blue InGaN light emitting diodes on free-standing semipolar (303̄1̄) bulk gan substrate Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.080203  0.792
2010 Zhao Y, Sonada J, Koslow I, Pan CC, Ohta H, Ha JS, DenBaars SP, Nakamura S. Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition Japanese Journal of Applied Physics. 49: 0702061-0702063. DOI: 10.1143/Jjap.49.070206  0.658
2010 Chung RB, Lin YD, Koslow I, Pfaff N, Ohta H, Ha J, DenBaars SP, Nakamura S. Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths Japanese Journal of Applied Physics. 49: 0702031-0702033. DOI: 10.1143/Jjap.49.070203  0.782
2010 Zhao Y, Sonoda J, Pan CC, Brinkley S, Koslow I, Fujito K, Ohta H, DenBaars SP, Nakamura S. 30-mW-class high-power and high-efficiency blue semipolar (101̄1̄) InGaN/GaN light-emitting diodes obtained by backside roughening technique Applied Physics Express. 3. DOI: 10.1143/Apex.3.102101  0.77
2009 Masui H, Sonoda J, Chakraborty A, Yamada H, Iso K, Pfaff N, Koslow I, Nakamura S, DenBaars SP. Customized filter cube in fluorescence microscope measurements of InGaN/GaN quantum-well characterization Japanese Journal of Applied Physics. 48: 0980031-0980032. DOI: 10.1143/Jjap.48.098003  0.769
2008 Masui H, Sonoda J, Pfaff N, Koslow I, Nakamura S, Denbaars SP. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/16/165105  0.763
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