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Matthew T. Hardy, Ph.D. - Publications

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Katzer DS, Hardy MT, Nepal N, Downey BP, Jin EN, Meyer DJ. Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32204. DOI: 10.1116/6.0000063  0.33
2020 Storm DF, Growden TA, Cornuelle EM, Peri PR, Osadchy T, Daulton JW, Zhang W, Katzer DS, Hardy MT, Nepal N, Molnar R, Brown ER, Berger PR, Smith DJ, Meyer DJ. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire Journal of Vacuum Science & Technology B. 38: 032214. DOI: 10.1116/6.0000052  0.431
2020 Jin EN, Lang AC, Hardy MT, Nepal N, Katzer DS, Storm DF, Downey BP, Meyer DJ. Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer Journal of Applied Physics. 127: 214104. DOI: 10.1063/5.0007144  0.408
2019 Ratchford DC, Winta CJ, Chatzakis I, Ellis CT, Passler NC, Winterstein J, Dev P, Razdolski I, Matson JR, Nolen JR, Tischler JG, Vurgaftman I, Katz MB, Nepal N, Hardy MT, et al. Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures. Acs Nano. PMID 31184132 DOI: 10.1021/Acsnano.9B01275  0.348
2019 Katzer DS, Nepal N, Hardy MT, Downey BP, Storm DF, Jin EN, Meyer DJ. RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 31211. DOI: 10.1116/1.5089779  0.329
2017 Downey BP, Katzer DS, Nepal N, Hardy MT, Meyer DJ. XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4994400  0.453
2017 Storm DF, Growden TA, Zhang W, Brown ER, Nepal N, Katzer DS, Hardy MT, Berger PR, Meyer DJ. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B110. DOI: 10.1116/1.4977779  0.46
2017 Storm DF, McConkie TO, Hardy MT, Katzer DS, Nepal N, Meyer DJ, Smith DJ. Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 6. DOI: 10.1116/1.4977777  0.437
2017 Hardy MT, Downey BP, Meyer DJ, Nepal N, Storm DF, Katzer DS. Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN Ieee Transactions On Semiconductor Manufacturing. 30: 475-479. DOI: 10.1109/Tsm.2017.2749201  0.43
2017 Hardy MT, Downey BP, Nepal N, Storm DF, Katzer DS, Meyer DJ. Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates Applied Physics Letters. 110: 162104. DOI: 10.1063/1.4981807  0.454
2016 Hardy MT, Storm DF, Katzer DS, Downey BP, Nepal N, Meyer DJ. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. Journal of Visualized Experiments : Jove. PMID 27911417 DOI: 10.3791/54775  0.468
2016 Nepal N, Scott Katzer D, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates Applied Physics Express. 9. DOI: 10.7567/Apex.9.021003  0.339
2016 Katzer DS, Nepal N, Meyer DJ, Downey BP, Wheeler V, Storm DF, Hardy MT. Metallic β-Nb 2 N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates Mrs Advances. 1: 127-132. DOI: 10.1557/Adv.2016.27  0.343
2016 Hardy MT, McConkie TO, Smith DJ, Storm DF, Downey BP, Katzer DS, Meyer DJ, Nepal N. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4940759  0.461
2016 Meyer DJ, Downey BP, Katzer DS, Nepal N, Wheeler VD, Hardy MT, Anderson TJ, Storm DF. Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates Ieee Transactions On Semiconductor Manufacturing. 29: 384-389. DOI: 10.1109/Tsm.2016.2599839  0.393
2016 Downey BP, Katzer DS, Nepal N, Meyer DJ, Storm DF, Wheeler VD, Hardy MT. Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy Electronics Letters. 52: 1263-1264. DOI: 10.1049/El.2016.0331  0.366
2016 McConkie TO, Hardy MT, Storm DF, Downey BP, Katzer DS, Meyer DJ, Nepal N, Smith DJ. Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE Microscopy and Microanalysis. 22: 1570-1571. DOI: 10.1017/S1431927616008692  0.383
2016 Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Journal of Crystal Growth. 456: 121-132. DOI: 10.1016/J.Jcrysgro.2016.08.047  0.488
2015 Katzer DS, Nepal N, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.085501  0.31
2015 Hardy MT, Storm DF, Downey BP, Katzer DS, Meyer DJ, McConkie TO, Smith DJ. Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4935130  0.444
2015 Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ. Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.045  0.37
2015 Storm DF, McConkie T, Katzer DS, Downey BP, Hardy MT, Meyer DJ, Smith DJ. Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN Journal of Crystal Growth. 409: 14-17. DOI: 10.1016/J.Jcrysgro.2014.09.042  0.454
2014 Hardy MT, Wu F, Huang CY, Zhao Y, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes Ieee Photonics Technology Letters. 26: 43-46. DOI: 10.1109/Lpt.2013.2288927  0.649
2014 Koslow IL, Hardy MT, Shan Hsu P, Wu F, Romanov AE, Young EC, Nakamura S, Denbaars SP, Speck JS. Onset of plastic relaxation in semipolar (11 2 ̄ 2) In xGa1-xN/GaN heterostructures Journal of Crystal Growth. 388: 48-53. DOI: 10.1016/J.Jcrysgro.2013.10.027  0.773
2013 Hardy MT, Wu F, Shan Hsu P, Haeger DA, Nakamura S, Speck JS, Denbaars SP. True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4829699  0.712
2013 Pourhashemi A, Farrell RM, Hardy MT, Hsu PS, Kelchner KM, Speck JS, Denbaars SP, Nakamura S. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202̄1̄) GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4824773  0.795
2013 Hardy MT, Holder CO, Feezell DF, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes Applied Physics Letters. 103. DOI: 10.1063/1.4819171  0.678
2013 Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, DenBaars SP. Demonstration of true green ITO clad semipolar(2021) InGaN/GaN laser diodes Cleo: Science and Innovations, Cleo_si 2013. CF1F.1.  0.634
2013 Hardy MT, Holder CO, Nakamura S, Speck JS, Cohen DA, Denbaars SP. Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes 2013 Conference On Lasers and Electro-Optics, Cleo 2013.  0.637
2012 Hardy MT, Nakamura S, Speck JS, Denbaars SP. Suppression of relaxation in (202̄1) InGaN/GaN laser diodes using limited area epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4770367  0.71
2012 Hardy MT, Young EC, Hsu PS, Haeger DA, Koslow IL, Nakamura S, Denbaars SP, Speck JS. Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202̄1) InGaN/GaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4754693  0.764
2012 Koslow IL, Hardy MT, Shan Hsu P, Dang PY, Wu F, Romanov A, Wu YR, Young EC, Nakamura S, Speck JS, Denbaars SP. Performance and polarization effects in (11 2 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers Applied Physics Letters. 101. DOI: 10.1063/1.4753949  0.793
2012 Hardy MT, Hsu PS, Wu F, Koslow IL, Young EC, Nakamura S, Romanov AE, Denbaars SP, Speck JS. Trace analysis of non-basal plane misfit stress relaxation in (20 2 1) and (30 3̄1̄) semipolar InGaN/GaN heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.4716465  0.771
2012 Shan Hsu P, Hardy MT, Young EC, Romanov AE, Denbaars SP, Nakamura S, Speck JS. Stress relaxation and critical thickness for misfit dislocation formation in (101̄0) and (3031̄) InGaN/GaN heteroepitaxy Applied Physics Letters. 100. DOI: 10.1063/1.4707160  0.626
2012 Shan Hsu P, Hardy MT, Wu F, Koslow I, Young EC, Romanov AE, Fujito K, Feezell DF, Denbaars SP, Speck JS, Nakamura S. 444.9 nm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer Applied Physics Letters. 100. DOI: 10.1063/1.3675850  0.817
2012 Huang CY, Zhao Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021̄) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.596
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2012 Conference On Lasers and Electro-Optics, Cleo 2012.  0.796
2012 Huang CY, Alam Y, Hardy MT, Fujito K, Feezell DF, Speck JS, DenBaars SP, Nakamura S. Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells Cleo: Science and Innovations, Cleo_si 2012. CTu2N.5.  0.594
2012 Hardy MT, Hsu PS, Koslow I, Feezell DF, Nakamura S, Speck JS, DenBaars SP. Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode 2021 Cleo: Science and Innovations, Cleo_si 2012. CTu2N.2.  0.795
2011 Farrell RM, Haeger DA, Hsu PS, Hardy MT, Kelchner KM, Fujito K, Feezell DF, Mishra UK, DenBaars SP, Speck JS, Nakamura S. AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-Type AlGaN etch stop Applied Physics Express. 4. DOI: 10.1143/Apex.4.092105  0.809
2011 Wu F, Young EC, Koslow I, Hardy MT, Hsu PS, Romanov AE, Nakamura S, Denbaars SP, Speck JS. Observation of non-basal slip in semipolar In xGa 1-xN/GaN heterostructures Applied Physics Letters. 99. DOI: 10.1063/1.3671113  0.765
2011 Huang CY, Hardy MT, Fujito K, Feezell DF, Speck JS, Denbaars SP, Nakamura S. Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21 ̄) InGaN/GaN quantum wells Applied Physics Letters. 99. DOI: 10.1063/1.3666791  0.641
2011 Hardy MT, Feezell DF, Denbaars SP, Nakamura S. Group III-nitride lasers: A materials perspective Materials Today. 14: 408-415. DOI: 10.1016/S1369-7021(11)70185-7  0.604
2011 Hardy MT, Farrell RM, Hsu PS, Haeger DA, Kelchner K, Fujito K, Chakraborty A, Cohen DA, Nakamura S, Speck JS, Denbaars SP. Effect of n-AlGaN cleave assistance layers on the morphology of c -plane cleaved facets for m -plane InGaN/GaN laser diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2226-2228. DOI: 10.1002/Pssc.201001149  0.812
2010 Huang CY, Tyagi A, Lin YD, Hardy MT, Hsu PS, Fujito K, Ha JS, Ohta H, Speck JS, DenBaars SP, Nakamura S. Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122) (Al,In,Ga)N waveguide structures Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.010207  0.452
2010 Kelchner KM, Farrell RM, Lin YD, Hsu PS, Hardy MT, Wu F, Cohen DA, Ohta H, Speck JS, Nakamura S, DenBaars SP. Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.092103  0.76
2010 Tyagi A, Farrell MR, Kelchner KM, Huang CY, Hsu PS, Haeger DA, Hardy MT, Holder C, Fujito K, Cohen DA, Ohta H, Speck JS, DenBaars SP, Nakamura S. AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm Applied Physics Express. 3. DOI: 10.1143/Apex.3.011002  0.789
2009 Hardy MT, Kelchner KM, Lin YD, Hsu PS, Fujito K, Ohta H, Speck JS, Nakamura S, DenBaars SP. m-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching Applied Physics Express. 2. DOI: 10.1143/Apex.2.121004  0.747
2009 Lin YD, Hardy MT, Hsu PS, Kelchner KM, Huang CY, Haeger DA, Farrell RM, Fujito K, Chakraborty A, Ohta H, Speck JS, DenBaars SP, Nakamura S. Blue - Green ingan/gan laser diodes on miscut m - Plane gan substrate Applied Physics Express. 2. DOI: 10.1143/Apex.2.082102  0.788
2009 Kelchner KM, Lin YD, Hardy MT, Huang CY, Hsu PS, Farrell RM, Haeger DA, Kuo HC, Wu F, Fujito K, Cohen DA, Chakraborty A, Ohta H, Speck JS, Nakamura S, et al. Nonpolar ALGaN-cladding-free blue laser diodes with InGaN waveguiding Applied Physics Express. 2. DOI: 10.1143/Apex.2.071003  0.801
2009 Lin YD, Huang CY, Hardy MT, Hsu PS, Fujito K, Chakraborty A, Ohta H, Speck JS, Denbaars SP, Nakamura S. M -plane pure blue laser diodes with p-GaN/n-AlGaN -based asymmetric cladding and InGaN-based wave-guiding layers Applied Physics Letters. 95. DOI: 10.1063/1.3212146  0.569
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