Huili Xing, Ph.D. - Publications

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

188 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Dang P, Khalsa G, Chang CS, Katzer DS, Nepal N, Downey BP, Wheeler VD, Suslov A, Xie A, Beam E, Cao Y, Lee C, Muller DA, Xing HG, Meyer DJ, et al. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7. PMID 33608281 DOI: 10.1126/sciadv.abf1388  0.68
2021 Jinno R, Chang CS, Onuma T, Cho Y, Ho ST, Rowe D, Cao MC, Lee K, Protasenko V, Schlom DG, Muller DA, Xing HG, Jena D. Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)O on m-plane sapphire. Science Advances. 7. PMID 33523991 DOI: 10.1126/sciadv.abd5891  0.8
2020 Bharadwaj S, Miller J, Lee K, Lederman J, Siekacz M, Xing HG, Jena D, Skierbiszewski C, Turski H. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. Optics Express. 28: 4489-4500. PMID 32121684 DOI: 10.1364/Oe.384021  0.68
2019 Chaudhuri R, Bader SJ, Chen Z, Muller DA, Xing HG, Jena D. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells. Science (New York, N.Y.). 365: 1454-1457. PMID 31604274 DOI: 10.1126/Science.Aau8623  0.68
2019 Park JH, Rai A, Hwang J, Zhang C, Kwak I, Wolf SF, Vishwanath S, Liu X, Dobrowolska M, Furdyna J, Xing HG, Cho K, Banerjee SK, Kummel AC. Band Structure Engineering of Layered WSe via One-Step Chemical Functionalization. Acs Nano. PMID 31260257 DOI: 10.1021/Acsnano.8B09351  0.44
2018 Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D. GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555: 183-189. PMID 29516996 DOI: 10.1038/Nature25768  0.76
2017 Park JH, Vishwanath S, Wolf SF, Zhang K, Kwak I, Edmonds M, Breeden M, Liu X, Dobrowolska M, Furdyna J, Robinson JA, Xing HG, Kummel AC. Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions. Acs Applied Materials & Interfaces. PMID 28805363 DOI: 10.1021/Acsami.7B08244  0.44
2016 Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano. PMID 27305595 DOI: 10.1021/Acsnano.6B02648  0.44
2016 Jiang T, Zhang X, Vishwanath S, Mu X, Kanzyuba V, Sokolov DA, Ptasinska S, Go DB, Xing HG, Luo T. Covalent bonding modulated graphene-metal interfacial thermal transport. Nanoscale. PMID 27174416 DOI: 10.1039/C6Nr00979D  0.76
2016 Wen M, Wang X, Sun Y, Xia J, Fan L, Xing H, Zhang Z, Li X. Detection of EML4-ALK fusion gene and features associated with EGFR mutations in Chinese patients with non-small-cell lung cancer. Oncotargets and Therapy. 9: 1989-95. PMID 27103824 DOI: 10.2147/OTT.S100303  0.48
2016 Gupta P, Rahman AA, Subramanian S, Gupta S, Thamizhavel A, Orlova T, Rouvimov S, Vishwanath S, Protasenko V, Laskar MR, Xing HG, Jena D, Bhattacharya A. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708. PMID 27025461 DOI: 10.1038/Srep23708  0.8
2016 Li S, Li X, Zhang Y, Zhou H, Tang F, Jia Y, Hu T, Sun H, Yang R, Chen Y, Cheng X, Lv W, Wu L, Zhou J, Wang S, ... ... Xing H, et al. Development and validation of a surgical-pathologic staging and scoring system for cervical cancer. Oncotarget. PMID 27014971 DOI: 10.18632/Oncotarget.8245  0.48
2016 Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. Acs Nano. PMID 26991824 DOI: 10.1021/Acsnano.5B07698  0.76
2016 Luo W, Fang M, Xu H, Xing H, Fu J, Nie Q. Comparison of miRNA expression profiles in pituitary-adrenal axis between Beagle and Chinese Field dogs after chronic stress exposure. Peerj. 4: e1682. PMID 26925320 DOI: 10.7717/peerj.1682  0.44
2016 Gao X, Zhang Z, Xing H, Yu J, Zhang N, Xu S. Selenium Deficiency-Induced Inflammation and Increased Expression of Regulating Inflammatory Cytokines in the Chicken Gastrointestinal Tract. Biological Trace Element Research. PMID 26899319 DOI: 10.1007/s12011-016-0651-1  0.44
2016 Ye P, Xing H, Lou F, Wang K, Pan Q, Zhou X, Gong L, Li D. Histone deacetylase 2 regulates doxorubicin (Dox) sensitivity of colorectal cancer cells by targeting ABCB1 transcription. Cancer Chemotherapy and Pharmacology. PMID 26846508 DOI: 10.1007/s00280-016-2979-9  0.56
2016 Feng Y, Takebe Y, Wei H, He X, Hsi JH, Li Z, Xing H, Ruan Y, Yang Y, Li F, Wei J, Li X, Shao Y. Geographic origin and evolutionary history of China's two predominant HIV-1 circulating recombinant forms, CRF07_BC and CRF08_BC. Scientific Reports. 6: 19279. PMID 26763952 DOI: 10.1038/srep19279  0.48
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Ff06  0.76
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. High-quality InN films on GaN using graded InGaN buffers by MBE Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Fd12  0.76
2016 Zhao Y, Zhou X, Li G, Xing H. A spatio-temporal VGI model considering trust-related information Isprs International Journal of Geo-Information. 5. DOI: 10.3390/ijgi5020010  0.52
2016 Hu BG, Xing HJ. An optimization approach of deriving bounds between entropy and error from joint distribution: Case study for binary classifications Entropy. 18. DOI: 10.3390/e18020059  0.92
2016 Vishwanath S, Liu X, Rouvimov S, Basile L, Lu N, Azcatl A, Magno K, Wallace RM, Kim M, Idrobo JC, Furdyna JK, Jena D, Xing HG. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2015.374  0.76
2016 Xing H, Zhu M, Chai Y, Yi K, Sun J, Cui Y, Shao J. Improving laser damage resistance of 355 nm high-reflective coatings by co-evaporated interfaces Optics Letters. 41: 1253-1256. DOI: 10.1364/OL.41.001253  0.44
2016 Li X, Yang J, Wang X, Liang J, Xing H. Role of TWIST2, E-cadherin and Vimentin in epithelial ovarian carcinogenesis and prognosis and their interaction in cancer progression European Journal of Gynaecological Oncology. 37: 100-108. DOI: 10.12892/ejgo2691.2016  0.48
2016 Zheng X, Feng J, Zhang J, Xing H, Zheng J, Wang M, Zong Y, Bai J, Li X. Anomalous Ferromagnetism and Electron Microscopy Characterization of High-Quality Neodymium Oxychlorides Nanocrystals Nano. 11. DOI: 10.1142/S179329201650034X  0.48
2016 Nomoto K, Song B, Hu Z, Zhu M, Qi M, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. 1.7-kV and 0.55-mΩ cm2 GaN p-n diodes on bulk GaN substrates with avalanche capability Ieee Electron Device Letters. 37: 161-164. DOI: 10.1109/Led.2015.2506638  0.76
2016 Song B, Zhu M, Hu Z, Qi M, Nomoto K, Yan X, Cao Y, Jena D, Xing HG. Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si with Non-Alloyed Regrown Ohmic Contacts Ieee Electron Device Letters. 37: 16-19. DOI: 10.1109/Led.2015.2497252  0.76
2016 Liu Z, Cai M, Li N, Luo X, Xing H, Li Q, Zhang J. Bioinformatics analysis of integrin αvβ3 Proceedings - 2015 7th International Conference On Information Technology in Medicine and Education, Itme 2015. 53-56. DOI: 10.1109/ITME.2015.105  0.48
2016 Nomoto K, Hu Z, Song B, Zhu M, Qi M, Yan R, Protasenko V, Imhoff E, Kuo J, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mω•cm2: A record high figure-of-merit of 12.8 GW/cm2 Technical Digest - International Electron Devices Meeting, Iedm. 2016: 9.7.1-9.7.4. DOI: 10.1109/IEDM.2015.7409665  0.76
2016 Song B, Verma AK, Nomoto K, Zhu M, Jena D, Xing HG. Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (-201) substrates Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548440  0.76
2016 Chaney A, Qi M, Islam SM, Xing HG, Jena D. GaN tunnel switch diodes Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548409  0.76
2016 Verma A, Song B, Meyer D, Downey B, Wheeler V, Xing HG, Jena D. Demonstration of GaN HyperFETs with ALD VO2 Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548397  0.76
2016 Zhao W, Yue Q, Kang KJ, Cheng JP, Li YJ, Wong HT, Lin ST, Chang JP, Chen JH, Chen QH, Chen YH, Deng Z, Du Q, Gong H, Hao XQ, ... ... Xing HY, et al. Search of low-mass WIMPs with a p -type point contact germanium detector in the CDEX-1 experiment Physical Review D - Particles, Fields, Gravitation and Cosmology. 93. DOI: 10.1103/Physrevd.93.092003  0.8
2016 Dong S, Liu X, Li X, Kanzyuba V, Yoo T, Rouvimov S, Vishwanath S, Xing HG, Jena D, Dobrowolska M, Furdyna JK. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy Apl Materials. 4. DOI: 10.1063/1.4942637  0.68
2016 Bhardwaj S, Sensale-Rodriguez B, Xing HG, Rajan S, Volakis JL. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4939076  0.76
2016 Liu Y, Chen D, Li X, Yu Z, Xia Q, Liang D, Xing H. Visible-light-induced controlled radical polymerization of methacrylates mediated by a pillared-layer metal-organic framework Green Chemistry. 18: 1475-1481. DOI: 10.1039/c5gc02620b  0.48
2016 Yan R, Arezoomandan S, Sensale-Rodriguez B, Xing HG. Exceptional Terahertz Wave Modulation in Graphene Enhanced by Frequency Selective Surfaces Acs Photonics. 3: 315-323. DOI: 10.1021/acsphotonics.5b00639  0.76
2016 Yang T, Xu J, Lu L, Zhu X, Gao Y, Xing H, Yu Y, Ding W, Liu Z. Copper nanoparticle/graphene oxide/single wall carbon nanotube hybrid materials as electrochemical sensing platform for nonenzymatic glucose detection Journal of Electroanalytical Chemistry. 761: 118-124. DOI: 10.1016/j.jelechem.2015.12.015  0.4
2016 Ning F, Zhu Z, Wang M, Geng L, Yang H, Wang K, Zhao L, Hou Z, Yue Q, Xing H. Cryogenic system of China Dark matter Experiment (CDEX-10) Cryogenics. 76: 10-15. DOI: 10.1016/j.cryogenics.2016.03.008  0.56
2016 Li J, Xing H, He Y, Zhu J. Design of new LED headlight optical system Guangxue Jishu/Optical Technique. 42: 176-179.  0.32
2015 Zhu Q, Yang X, Jiang H, Tan G, Xiong R, Liao L, Xing H, Ruan Y, Shen Z, Tang Z, Shao Y. [Efficacy of antiviral therapy on prevention of HIV transmission among sero-discordant couples in Guangxi Zhuang autonomous region]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 36: 1401-1405. PMID 26850400  0.44
2015 Jia L, Yang Y, Zhu D, Gao X, Wang X, Xing H, Bao J, Shu L. Anti-proliferative effect of the extract of Guangzao (Fructus Choerospondiatis) on cultured rat cardiac fibroblasts. Journal of Traditional Chinese Medicine = Chung I Tsa Chih Ying Wen Pan / Sponsored by All-China Association of Traditional Chinese Medicine, Academy of Traditional Chinese Medicine. 35: 685-9. PMID 26742315  0.44
2015 Li Z, Liao L, Feng Y, Zhang J, Yan J, He C, Xu W, Ruan Y, Xing H, Shao Y. Trends of HIV subtypes and phylogenetic dynamics among young men who have sex with men in China, 2009-2014. Scientific Reports. 5: 16708. PMID 26577039 DOI: 10.1038/srep16708  0.44
2015 Chen W, Mao L, Xing H, Xu L, Fu X, Huang L, Huang D, Pu Z, Li Q. Lycopene attenuates Aβ1-42 secretion and its toxicity in human cell and Caenorhabditis elegans models of Alzheimer disease. Neuroscience Letters. PMID 26453763 DOI: 10.1016/j.neulet.2015.10.009  0.48
2015 Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/Acs.Nanolett.5B01792  0.76
2015 Tuerdi Z, Abuzhalihan N, Wang L, Zheng W, Ruan Y, Guan X, Leng X, Dong Y, Xing H. A survey of the distribution of HIV subtypes and drug resistance in HIV-infected patients receiving antiretroviral treatment in Yili prefecture of Xinjiang, China Chinese Journal of Microbiology and Immunology (China). 35: 905-909. DOI: 10.3760/cma.j.issn.0254-5101.2015.12.009  0.44
2015 Zhang Y, Guo M, Xing H, Wang F, Wang X, Zhang J, Zhuang L. Influence of different thermomechanical processes on themechanical properties and microstructure of Al-Mg-Si-Cu alloy sheets Jinshu Xuebao/Acta Metallurgica Sinica. 51: 1425-1434. DOI: 10.11900/0412.1961.2015.00063  0.44
2015 Xing HG, Yan R, Song B, Encomendero J, Jena D. THz devices based on 2D electron systems Proceedings of Spie - the International Society For Optical Engineering. 9476. DOI: 10.1117/12.2185117  0.76
2015 Jena D, Li M, Ma N, Hwang WS, Esseni D, Seabaugh A, Xing HG. Electron transport in 2D crystal semiconductors and their device applications 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348543  0.76
2015 Song B, Zhu M, Hu Z, Qi M, Yan X, Cao Y, Kohn E, Jena D, Xing HG. AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348527  1
2015 Li MO, Esseni D, Nahas JJ, Jena D, Xing HG. Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs) Ieee Journal of the Electron Devices Society. 3: 200-207. DOI: 10.1109/Jeds.2015.2390643  0.76
2015 Song B, Zhu M, Hu Z, Nomoto K, Jena D, Xing H. Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 273-276. DOI: 10.1109/ISPSD.2015.7123442  0.8
2015 Liu X, Li X, Vishwanath S, Dong S, Yoo T, Jena D, Xing H, Dobrowolska M, Furdyna JK. MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates 2015 Ieee International Magnetics Conference, Intermag 2015. DOI: 10.1109/INTMAG.2015.7156850  0.8
2015 Bhardwaj S, Sensale-Rodriguez B, Xing HG, Volakis JL. Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs Device Research Conference - Conference Digest, Drc. 2015: 85-86. DOI: 10.1109/DRC.2015.7175567  0.76
2015 Islam SM, Protasenko V, Rouvimov S, Verma J, Xing H, Jena D. Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures Device Research Conference - Conference Digest, Drc. 2015: 67-68. DOI: 10.1109/DRC.2015.7175559  0.8
2015 Xing HG, Song B, Zhu M, Hu Z, Qi M, Nomoto K, Jena D. Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits Device Research Conference - Conference Digest, Drc. 2015: 51-52. DOI: 10.1109/DRC.2015.7175549  0.76
2015 Qi M, Namoto K, Zhu M, Hu Z, Zhao Y, Song B, Li G, Fay P, Xing H, Jena D. High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates Device Research Conference - Conference Digest, Drc. 2015: 31-32. DOI: 10.1109/DRC.2015.7175537  0.8
2015 Vishwanath S, Liu X, Rouvimov S, Mende PC, Azcatl A, McDonnell S, Wallace RM, Feenstra RM, Furdyna JK, Jena D, Xing HG. Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene 2d Materials. 2. DOI: 10.1088/2053-1583/2/2/024007  0.76
2015 Hu Z, Nomoto K, Song B, Zhu M, Qi M, Pan M, Gao X, Protasenko V, Jena D, Xing HG. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107. DOI: 10.1063/1.4937436  0.76
2015 Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891  0.76
2015 Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900  0.76
2015 Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066  0.76
2015 Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155  0.8
2015 Zhu X, Xu J, Duan X, Lu L, Zhang K, Yu Y, Xing H, Gao Y, Dong L, Sun H, Yang T. Controlled synthesis of partially reduced graphene oxide: Enhance electrochemical determination of isoniazid with high sensitivity and stability Journal of Electroanalytical Chemistry. 757: 183-191. DOI: 10.1016/j.jelechem.2015.09.038  0.4
2015 Faria FA, Nomoto K, Hu Z, Rouvimov S, Xing H, Jena D. Low temperature AlN growth by MBE and its application in HEMTs Journal of Crystal Growth. 425: 133-137. DOI: 10.1016/J.Jcrysgro.2015.03.039  0.8
2015 Li P, Xing H, Zhao Z, Yang Z, Cao Y, Li W, Yan G, Sattabongkot J, Cui L, Fan Q. Genetic diversity of Plasmodium falciparum histidine-rich protein 2 in the China-Myanmar border area Acta Tropica. 152: 26-31. DOI: 10.1016/j.actatropica.2015.08.003  0.44
2015 Shams MIB, Jiang Z, Qayyum J, Rahman SM, Xing HG, Hesler JL, Fay P, Liu L. Characterization of terahertz antennas using photoinduced coded-aperture imaging Microwave and Optical Technology Letters. 57: 1180-1184. DOI: 10.1002/mop.29051  0.76
2015 Xing H, Hou M, Wang L, Jiang X. Spherical QTM-based submerged simulation system of sea level rise Xitong Fangzhen Xuebao / Journal of System Simulation. 27: 2689-2694.  0.44
2014 Zheng H, Tang R, Yao Y, Ji Z, Cao Y, Liu Z, Peng F, Wang W, Can D, Xing H, Bu G, Xu H, Zhang YW, Zheng W. MiR-219 Protects Against Seizure in the Kainic Acid Model of Epilepsy. Molecular Neurobiology. PMID 25394384 DOI: 10.1007/S12035-014-8981-5  0.44
2014 Cavallo F, Rojas Delgado R, Kelly MM, Sánchez Pérez JR, Schroeder DP, Xing HG, Eriksson MA, Lagally MG. Exceptional charge transport properties of graphene on germanium. Acs Nano. 8: 10237-45. PMID 25203974 DOI: 10.1021/Nn503381M  1
2014 Yan R, Simpson JR, Bertolazzi S, Brivio J, Watson M, Wu X, Kis A, Luo T, Hight Walker AR, Xing HG. Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy. Acs Nano. 8: 986-93. PMID 24377295 DOI: 10.1021/Nn405826K  1
2014 Ganguly S, Verma J, Xing H, Jena D. Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts Applied Physics Express. 7. DOI: 10.7567/Apex.7.105501  0.8
2014 Hu Z, Yue Y, Zhu M, Song B, Ganguly S, Bergman J, Jena D, Xing HG. Impact of CF4 plasma treatment on threshold voltage and mobility in Al 2O3/InAlN/GaN MOSHEMTs Applied Physics Express. 7. DOI: 10.7567/Apex.7.031002  0.76
2014 O'Brien WA, Wu B, Stephenson C, Liang K, Cress S, Protasenko V, Arisio C, Lieberman M, Xing HG, Wistey MA. Optimal oxide passivation of ge for optoelectronics Ecs Journal of Solid State Science and Technology. 3: P273-P276. DOI: 10.1149/2.0171407Jss  1
2014 Esseni D, Pala MG, Revelant A, Palestri P, Selmi L, Li M, Snider G, Jena D, Xing HG. Challenges and opportunities in the design of Tunnel FETs: Materials, device architectures, and defects Ecs Transactions. 64: 581-595. DOI: 10.1149/06406.0581ecst  0.76
2014 Fay P, Xie Y, Zhao Y, Jiang Z, Rahman S, Xing H, Sensale-Rodriguez B, Liu L. Emerging electronic devices for THz sensing and imaging Proceedings of Spie - the International Society For Optical Engineering. 9199. DOI: 10.1117/12.2062263  0.76
2014 Shams MIB, Jiang Z, Rahman S, Qayyum J, Hesler JL, Cheng LJ, Xing HG, Fay P, Liu L. Approaching real-time terahertz imaging using photo-induced reconfigurable aperture arrays Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2053326  0.76
2014 Verma JK, Protasenko VV, Islam SM, Xing H, Jena D. Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037132  0.8
2014 Yue Y, Yan X, Li W, Xing HG, Jena D, Fay P. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896592  1
2014 Kannegulla A, Jiang Z, Rahman SM, Shams MIB, Fay P, Xing HG, Cheng LJ, Liu L. Coded-aperture imaging using photo-induced reconfigurable aperture arrays for mapping terahertz beams Ieee Transactions On Terahertz Science and Technology. 4: 321-327. DOI: 10.1109/TTHZ.2014.2307163  0.76
2014 Song B, Sensale-Rodriguez B, Wang R, Guo J, Hu Z, Yue Y, Faria F, Schuette M, Ketterson A, Beam E, Saunier P, Gao X, Guo S, Fay P, Jena D, ... Xing HG, et al. Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates Ieee Transactions On Electron Devices. 61: 747-754. DOI: 10.1109/Ted.2014.2299810  1
2014 Zhao P, Verma A, Verma J, Xing HG, Fay P, Jena D. GaN heterostructure barrier diodes exploiting polarization-induced δ-doping Ieee Electron Device Letters. 35: 615-617. DOI: 10.1109/Led.2014.2316140  0.76
2014 Rahman SM, Jiang Z, Xing HG, Fay P, Liu L. Design, fabrication and characterization of 585 GHz integrated focal-plane arrays based on heterostructure backward diodes International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2014.6956065  0.76
2014 Xiao S, Li M, Seabaugh A, Jena D, Xing HG. Vertical heterojunction of MoS2 and WSe2 Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2014.6872351  0.76
2014 Song B, Zhu M, Hu Z, Kohn E, Jena D, Xing HG. GaN lateral PolarSJs: Polarization-doped super junctions Device Research Conference - Conference Digest, Drc. 99-100. DOI: 10.1109/DRC.2014.6872316  0.76
2014 Hu Z, Jana R, Qi M, Ganguly S, Song B, Kohn E, Jena D, Xing HG. Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2014.6872283  0.76
2014 Li MO, Esseni D, Jena D, Xing HG. Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET) Device Research Conference - Conference Digest, Drc. 17-18. DOI: 10.1109/DRC.2014.6872278  0.76
2014 Ren J, Song B, Xing HG, Chen S, Ketterson A, Beam E, Chou TM, Pilla M, Tserng HQ, Gao X, Saunier P, Fay P. Model development for monolithically-integrated E/D-mode millimeter-wave InAlN/AlN/GaN HEMTs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2014.6978570  0.76
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.76
2014 Zhao Y, Chen W, Li W, Zhu M, Yue Y, Song B, Encomendero J, Sensale-Rodriguez B, Xing H, Fay P. Direct electrical observation of plasma wave - Related effects in GaN-based two-dimensional electron gases Applied Physics Letters. 105. DOI: 10.1063/1.4900964  0.76
2014 Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800  0.8
2014 Li G, Song B, Ganguly S, Zhu M, Wang R, Yan X, Verma J, Protasenko V, Grace Xing H, Jena D. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN Applied Physics Letters. 104. DOI: 10.1063/1.4875916  0.36
2014 Qi M, Stephenson CA, Protasenko V, O'Brien WA, Mintairov A, Xing H, Wistey MA. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104. DOI: 10.1063/1.4866278  1
2014 Verma J, Islam SM, Protasenko V, Kumar Kandaswamy P, Xing H, Jena D. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4862064  1
2014 Shams MIB, Jiang Z, Rahman S, Qayyum J, Cheng LJ, Xing HG, Fay P, Liu L. Approaching real-time terahertz imaging with Photo-induced coded apertures and compressed sensing Electronics Letters. 50: 801-803. DOI: 10.1049/el.2014.0993  0.76
2014 Vishwanath S, Rouvimov S, Orlova T, Liu X, Furdyna JK, Jena D, Xing HG. Atomic structure of thin MoSe2 films grown by molecular beam epitaxy Microscopy and Microanalysis. 20: 164-165. DOI: 10.1017/S1431927614002542  0.76
2014 Ritchie A, Eger S, Wright C, Chelladurai D, Borrowman C, Olovsson W, Magnuson M, Verma J, Jena D, Xing HG, Dubuc C, Urquhart S. Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride Applied Surface Science. 316: 232-236. DOI: 10.1016/J.Apsusc.2014.07.070  1
2014 Ganguly S, Song B, Hwang WS, Hu Z, Zhu M, Verma J, Xing HG, Jena D. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 887-889. DOI: 10.1002/Pssc.201300668  1
2014 Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers 0.76
2014 Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers 0.76
2013 Sensale-Rodriguez B, Rafique S, Yan R, Zhu M, Protasenko V, Jena D, Liu L, Xing HG. Terahertz imaging employing graphene modulator arrays. Optics Express. 21: 2324-30. PMID 23389211 DOI: 10.1364/Oe.21.002324  1
2013 Shi H, Yan R, Bertolazzi S, Brivio J, Gao B, Kis A, Jena D, Xing HG, Huang L. Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. Acs Nano. 7: 1072-80. PMID 23273148 DOI: 10.1021/Nn303973R  1
2013 Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W  1
2013 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, Grace H. Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400GHz Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn14  0.36
2013 Sensale-Rodríguez B, Liu L, Fay P, Jena D, Xing HG. Power amplification at THz via plasma wave excitation in RTD-gated HEMTs Ieee Transactions On Terahertz Science and Technology. 3: 200-206. DOI: 10.1109/Tthz.2012.2235909  1
2013 Li G, Wang R, Song B, Verma J, Cao Y, Ganguly S, Verma A, Guo J, Xing HG, Jena D. Polarization-induced GaN-on-insulator E/D Mode p-channel heterostructure FETs Ieee Electron Device Letters. 34: 852-854. DOI: 10.1109/Led.2013.2264311  1
2013 Sensale-Rodriguez B, Yan R, Liu L, Jena D, Xing HG. Graphene for reconfigurable terahertz optoelectronics Proceedings of the Ieee. 101: 1705-1716. DOI: 10.1109/JPROC.2013.2250471  0.76
2013 Sensale-Rodriguez B, Zhao P, Jena D, Xing HG. Perspectives of graphene SymFETs for THz applications International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2013.6665853  1
2013 Wang R, Li G, Guo J, Song B, Verma J, Hu Z, Yue Y, Nomoto K, Ganguly S, Rouvimov S, Gao X, Laboutin O, Cao Y, Johnson W, Fay P, ... ... Xing HG, et al. Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation Technical Digest - International Electron Devices Meeting, Iedm. 28.6.1-28.6.4. DOI: 10.1109/IEDM.2013.6724712  1
2013 Hwang WS, Verma A, Protasenko V, Rouvimov S, Xing HG, Seabaugh A, Haensch W, Van De Walle C, Galazka Z, Albrecht M, Forrnari R, Jena D. Nanomembrane β-Ga2O3 high-voltage field effect transistors Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2013.6633866  1
2013 Zhao P, Verma A, Verma J, Xing H, Fay P, Jena D. GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping Device Research Conference - Conference Digest, Drc. 203-204. DOI: 10.1109/DRC.2013.6633864  1
2013 Jiang Z, He Y, Zhou G, Kubis T, Xing HG, Klimeck G. Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark Device Research Conference - Conference Digest, Drc. 145-146. DOI: 10.1109/DRC.2013.6633835  0.76
2013 Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820  1
2013 Ghassemi H, Lang A, Johnson C, Wang R, Song B, Phillips P, Qiao Q, Klie RF, Xing HG, Taheri ML. Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias Journal of Applied Physics. 114. DOI: 10.1063/1.4818450  1
2013 Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169  1
2013 Verma J, Kandaswamy PK, Protasenko V, Verma A, Grace Xing H, Jena D. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes Applied Physics Letters. 102. DOI: 10.1063/1.4789512  0.36
2013 Sensale-Rodriguez B, Guo J, Wang R, Verma J, Li G, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, ... Xing HG, et al. Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs Solid-State Electronics. 80: 67-71. DOI: 10.1016/J.Sse.2012.10.004  1
2013 Sun N, Tahy K, Xing H, Jena D, Arnold G, Ruggiero ST. Electrical noise and transport properties of graphene Journal of Low Temperature Physics. 172: 202-211. DOI: 10.1007/S10909-013-0866-X  1
2013 Tahy K, Xing H, Jena D. Graphene nanoribbon FETs for digital electronics: Experiment and modeling International Journal of Circuit Theory and Applications. 41: 603-607. DOI: 10.1002/Cta.1801  1
2013 Yan R, Rafique S, Li W, Liang X, Jena D, Liu L, Sensale-Rodriguez B, Xing HG. Tunable graphene-based metamaterial terahertz modulators 2013 Conference On Lasers and Electro-Optics, Cleo 2013 0.76
2013 Yan R, Rafique S, Li W, Liang X, Jena D, Liu L, Sensale-Rodriguez B, Xing HG. Tunable graphene-based metamaterial terahertz modulators Cleo: Science and Innovations, Cleo_si 2013. CM2J.2.  1
2012 Yan R, Sensale-Rodriguez B, Liu L, Jena D, Xing HG. A new class of electrically tunable metamaterial terahertz modulators. Optics Express. 20: 28664-71. PMID 23263104 DOI: 10.1364/Oe.20.028664  1
2012 Sensale-Rodriguez B, Yan R, Rafique S, Zhu M, Li W, Liang X, Gundlach D, Protasenko V, Kelly MM, Jena D, Liu L, Xing HG. Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators. Nano Letters. 12: 4518-22. PMID 22862777 DOI: 10.1021/Nl3016329  1
2012 Sensale-Rodriguez B, Yan R, Kelly MM, Fang T, Tahy K, Hwang WS, Jena D, Liu L, Xing HG. Broadband graphene terahertz modulators enabled by intraband transitions. Nature Communications. 3: 780. PMID 22510685 DOI: 10.1038/Ncomms1787  1
2012 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, ... Xing H, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz Ieee Electron Device Letters. 33: 988-990. DOI: 10.1109/Led.2012.2196751  1
2012 Fang T, Wang R, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance of GaN transistors Ieee Electron Device Letters. 33: 709-711. DOI: 10.1109/Led.2012.2187169  1
2012 Li G, Wang R, Guo J, Verma J, Hu Z, Yue Y, Faria F, Cao Y, Kelly M, Kosel T, Xing H, Jena D. Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts Ieee Electron Device Letters. 33: 661-663. DOI: 10.1109/Led.2012.2186628  1
2012 Guo J, Li G, Faria F, Cao Y, Wang R, Verma J, Gao X, Guo S, Beam E, Ketterson A, Schuette M, Saunier P, Wistey M, Jena D, Xing H. MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm Ieee Electron Device Letters. 33: 525-527. DOI: 10.1109/Led.2012.2186116  1
2012 Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915  1
2012 Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Xing H, Seabaugh A, Jena D. First demonstration of two-dimensional WS 2 transistors exhibiting 10 5 room temperature modulation and ambipolar behavior Device Research Conference - Conference Digest, Drc. 187-188. DOI: 10.1109/DRC.2012.6257042  1
2012 Li G, Wang R, Verma J, Xing H, Jena D. Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2012.6256962  1
2012 Verma J, Kumar Kandaswamy P, Protasenko V, Verma A, Xing H, Jena D. Tunnel injection GaN/AlN quantum dot UV LED Device Research Conference - Conference Digest, Drc. 249-250. DOI: 10.1109/DRC.2012.6256947  1
2012 Sensale-Rodriguez B, Yan R, Zhu M, Jena D, Liu L, Grace Xing H. Efficient terahertz electro-absorption modulation employing graphene plasmonic structures Applied Physics Letters. 101. DOI: 10.1063/1.4773374  0.56
2012 Ganguly S, Konar A, Hu Z, Xing H, Jena D. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron- mobility transistors Applied Physics Letters. 101. DOI: 10.1063/1.4773244  1
2012 Pietzka C, Li G, Alomari M, Xing H, Jena D, Kohn E. Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements Journal of Applied Physics. 112. DOI: 10.1063/1.4757932  1
2012 Laboutin O, Cao Y, Johnson W, Wang R, Li G, Jena D, Xing H. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3697415  1
2012 Sivasubramani P, Park TJ, Coss BE, Lucero A, Huang J, Brennan B, Cao Y, Jena D, Xing HG, Wallace RM, Kim J. In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates Physica Status Solidi - Rapid Research Letters. 6: 22-24. DOI: 10.1002/Pssr.201105417  1
2012 Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241  1
2011 Gao B, Hartland G, Fang T, Kelly M, Jena D, Xing HG, Huang L. Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy. Nano Letters. 11: 3184-9. PMID 21696177 DOI: 10.1021/Nl201397A  1
2011 Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, ... Xing H, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232  1
2011 Wang R, Li G, Verma J, Sensale-Rodriguez B, Fang T, Guo J, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs Ieee Electron Device Letters. 32: 1215-1217. DOI: 10.1109/Led.2011.2158288  1
2011 Wang R, Li G, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. 210-GHz InAlN/GaN HEMTs with dielectric-free passivation Ieee Electron Device Letters. 32: 892-894. DOI: 10.1109/Led.2011.2147753  1
2011 Wang R, Saunier P, Tang Y, Fang T, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 10-12 on/off current ratio Ieee Electron Device Letters. 32: 309-311. DOI: 10.1109/Led.2010.2095494  1
2011 Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Richter CA, Nguyen NV. Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135253  1
2011 Sensale-Rodriguez B, Guo J, Wang R, Li G, Fang T, Saunier P, Ketterson A, Schuette M, Gao X, Guo S, Cao Y, Laboutin O, Johnson W, Snider G, Fay P, ... ... Xing H, et al. Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135164  1
2011 Fang T, Wang R, Li G, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2011.5994529  1
2011 Zhou G, Lu Y, Li R, Zhang Q, Hwang W, Liu Q, Vasen T, Zhu H, Kuo J, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs Device Research Conference - Conference Digest, Drc. 205-206. DOI: 10.1109/DRC.2011.5994499  1
2011 Wang R, Li G, Fang T, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments Device Research Conference - Conference Digest, Drc. 139-140. DOI: 10.1109/DRC.2011.5994455  1
2011 Ganguly S, Verma J, Li G, Zimmermann T, Xing H, Jena D. Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 121-122. DOI: 10.1109/DRC.2011.5994445  1
2011 Tahy K, Hwang WS, Tedesco JL, Myers-Ward RL, Campbell PM, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Sub-10 nm epitaxial graphene nanoribbon FETs Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2011.5994411  1
2011 Verma J, Simon J, Protasenko V, Kosel T, Grace Xing H, Jena D. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping Applied Physics Letters. 99. DOI: 10.1063/1.3656707  0.52
2011 Goodman KD, Protasenko VV, Verma J, Kosel TH, Xing HG, Jena D. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3575323  1
2011 Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/Pssa.201001189  1
2011 Zimmermann T, Cao Y, Li G, Snider G, Jena D, Xing H. Subcritical barrier AlN/GaN E/D-mode HFETs and inverters Physica Status Solidi (a) Applications and Materials Science. 208: 1620-1622. DOI: 10.1002/Pssa.201001178  1
2010 Huang L, Hartland GV, Chu LQ, Luxmi, Feenstra RM, Lian C, Tahy K, Xing H. Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene. Nano Letters. 10: 1308-13. PMID 20210348 DOI: 10.1021/Nl904106T  1
2010 Simon J, Protasenko V, Lian C, Xing H, Jena D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science (New York, N.Y.). 327: 60-4. PMID 20044569 DOI: 10.1126/Science.1183226  1
2010 Shenai K, Shah K, Xing H. Performance evaluation of silicon and gallium nitride power FETs for DC/DC power converter applications Proceedings of the Ieee 2010 National Aerospace and Electronics Conference, Naecon 2010. 317-321. DOI: 10.1109/NAECON.2010.5712970  1
2010 Shenai K, Bernstein GH, Xing HG, Wu J. Chip-scale DC/DC power converter Proceedings of the Ieee 2010 National Aerospace and Electronics Conference, Naecon 2010. 310-316. DOI: 10.1109/NAECON.2010.5712969  1
2010 Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771  1
2010 Zhang Q, Lu Y, Xing HG, Koester SJ, Koswatta SO. Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Ieee Electron Device Letters. 31: 531-533. DOI: 10.1109/LED.2010.2045100  1
2010 Tang Y, Saunier P, Wang R, Ketterson A, Gao X, Guo S, Snider G, Jena D, Xing H, Fay P. High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications Technical Digest - International Electron Devices Meeting, Iedm. 30.4.1-30.4.4. DOI: 10.1109/IEDM.2010.5703451  1
2010 Tahy K, Fleming MJ, Raynal B, Protasenko V, Koswatta S, Jena D, Xing H, Kelly M. Device characteristics of single-layer graphene FETs grown on copper Device Research Conference - Conference Digest, Drc. 77-78. DOI: 10.1109/DRC.2010.5551930  1
2010 Wang R, Xing X, Fang T, Zimmermann T, Lian C, Li G, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. High performance E-mode InAIN/GaN HEMTs: Interface states from subthreshold slopes Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2010.5551875  1
2010 Liu L, Sensale-Rodriguez B, Zhang Z, Zimmermann T, Cao Y, Jena D, Fay P, Xing H. Development of microwave and terahertz detectors utilizing AlN/GaN high electron mobility transistors 21st International Symposium On Space Terahertz Technology 2010, Isstt 2010. 276-280.  0.76
2009 Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P, Jena D. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Physical Review Letters. 103: 026801. PMID 19659229 DOI: 10.1103/Physrevlett.103.026801  1
2009 Sensale-Rodríguez B, Fay P, Liu L, Jena D, Xing HG. Enhanced terahertz detection in resonant tunnel diode-gated HEMTs Ecs Transactions. 49: 93-102. DOI: 10.1149/04901.0093ecst  0.76
2009 Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160  1
2009 Zhou G, Kabeer S, Wheeler D, Seabaugh A, Xing H. Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378147  1
2009 Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127  1
2009 Tahy K, Koswatta S, Fang T, Zhang Q, Xing H, Jena D. High field transport properties of 2D and nanoribbon graphene FETs Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2009.5354954  1
2008 Yu Y, Protasenko V, Jena D, Xing HG, Kuno M. Photocurrent polarization anisotropy of randomly oriented nanowire networks. Nano Letters. 8: 1352-7. PMID 18393472 DOI: 10.1021/Nl080028P  1
2008 Simon J, Wang K, Xing H, Jena D. Polarization induced graded AlGaN p-n junction grown by MBE Device Research Conference - Conference Digest, Drc. 289-290. DOI: 10.1109/DRC.2008.4800843  1
2008 Luo X, Lee Y, Konar A, Fang T, Xing H, Snider G, Jena D. Current-carrying capacity of long & short channel 2d graphene transistors Device Research Conference - Conference Digest, Drc. 29-30. DOI: 10.1109/DRC.2008.4800722  1
2008 Lian C, Xing HG, Chang YC, Fichtenbaum N. Electrical transport properties of wafer-fused p-GaAs/n-GaN heterojunctions Applied Physics Letters. 93. DOI: 10.1063/1.2983648  1
2008 Lian C, Xing HG, Chang YC, Fichtenbaum N. The role of doping type in setback layers on wafer-fused AlGaAs/GaAs/GaN HBTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2960-2962. DOI: 10.1002/pssc.200779307  1
2007 Singh A, Li X, Protasenko V, Galantai G, Kuno M, Xing HG, Jena D. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. Nano Letters. 7: 2999-3006. PMID 17760476 DOI: 10.1021/Nl0713023  1
2007 Lian C, Xing H, Wang CS, McCarthy L, Brown D. DC characteristics of AlGaAs/GaAs/GaN HBTs formed by direct wafer fusion Ieee Electron Device Letters. 28: 8-10. DOI: 10.1109/LED.2006.887932  1
2007 Cao Y, Zimmermann T, Deen D, Simon J, Bean J, Su N, Zhang J, Fay P, Xing H, Jena D. Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422436  1
2007 Lian C, Xing HG, Wang CS, Brown D, McCarthy L. Gain degradation mechanisms in wafer fused AlGaAsGaAsGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2766961  1
2006 Liberis J, Ramonas M, Kiprijanovic O, Matulionis A, Goel N, Simon J, Wang K, Xing H, Jena D. Hot phonons in Si-doped GaN Applied Physics Letters. 89. DOI: 10.1063/1.2388866  1
2006 Lian C, Xing H. Surface potential measurements on Ni-(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163073  1
2004 Buttari D, Chini A, Chakraborty A, McCarthy L, Xing H, Palacios T, Shen L, Keller S, Mishra UK. Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures International Journal of High Speed Electronics and Systems. 14: 756-761. DOI: 10.1142/S012915640400279X  1
2004 McCarthy LS, Zhang NQ, Xing H, Moran B, DenBaars S, Mishra UK. High voltage AlGaN/GaN heterojunction transistors International Journal of High Speed Electronics and Systems. 14: 225-243. DOI: 10.1142/S0129156404002314  1
2004 Yu H, McCarthy L, Xing H, Waltereit H, Shen L, Keller S, Denbaars SP, Speck JS, Mishra UK. Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing Applied Physics Letters. 85: 5254-5256. DOI: 10.1063/1.1828237  1
2004 Chakraborty A, Xing H, Craven MD, Keller S, Mates T, Speck JS, DenBaars SP, Mishra UK. Nonpolar a-plane p-type GaN and p-n junction diodes Journal of Applied Physics. 96: 4494-4499. DOI: 10.1063/1.1790065  1
2001 Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317  1
2001 McCarthy L, Smorchkova I, Xing H, Fini P, Keller S, Speck J, DenBaars SP, Rodwell MJW, Mishra UK. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters. 78: 2235-2237. DOI: 10.1063/1.1358358  1
1999 Limb JB, McCarthy L, Kozodoy P, Xing H, Ibbetson J, Smorchkova Y, Denbaars SP, Mishra UK. AlGaN/GaN HBTs using regrown emitter Electronics Letters. 35: 1671-1673. DOI: 10.1049/El:19991129  1
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