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Robert L. Coffie, Ph.D. - Publications

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Coffie R. Calculating drain delay in high electron mobility transistors Solid-State Electronics. 114: 98-103. DOI: 10.1016/J.Sse.2015.08.016  0.354
2007 Heying B, Smorchkova IP, Coffie R, Gambin V, Chen YC, Sutton W, Lam T, Kahr MS, Sikorski KS, Wojtowicz M. In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy Electronics Letters. 43: 779-780. DOI: 10.1049/El:20071211  0.475
2004 Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs Ieee Electron Device Letters. 25: 229-231. DOI: 10.1109/Led.2004.826525  0.759
2004 Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars SP, Mishra UK. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs without Surface Passivation Ieee Electron Device Letters. 25: 7-9. DOI: 10.1109/Led.2003.821673  0.766
2004 Chini A, Buttari D, Coffie R, Heikman S, Keller S, Mishra UK. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters. 40: 73-74. DOI: 10.1049/El:20040017  0.56
2004 Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, Denbaars SP, Mishra UK. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425. DOI: 10.1007/S11664-004-0195-6  0.787
2003 Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682  0.438
2003 Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682  0.604
2003 Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S, Mishra UK. Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781. DOI: 10.1063/1.1632035  0.703
2003 Coffie R, Shen L, Parish G, Chini A, Buttari D, Heikman S, Keller S, Mishra UK. Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz Electronics Letters. 39: 1419-1420. DOI: 10.1049/El:20030872  0.766
2003 Chini A, Coffie R, Meneghesso G, Zanoni E, Buttari D, Heikman S, Keller S, Mishra UK. 2.1 A/mm current density AlGaN/GaN HEMT Electronics Letters. 39: 625-626. DOI: 10.1049/El:20030382  0.582
2002 Coffie R, Buttari D, Heikman S, Keller S, Chini A, Shen L, Mishra UK. p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) Ieee Electron Device Letters. 23: 588-590. DOI: 10.1109/Led.2002.803764  0.752
2002 Zheng C, Coffie R, Buttari D, Champlain J, Mishra UK. Oxidation control of GaAs pHEMTs for high efficiency applications Ieee Electron Device Letters. 23: 380-382. DOI: 10.1109/Led.2002.1015203  0.627
2002 Jiménez A, Buttari D, Jena D, Coffíe R, Heikman S, Zhang NQ, Shen L, Calleja E, Muñoz E, Speck J, Mishra UK. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs Ieee Electron Device Letters. 23: 306-308. DOI: 10.1109/Led.2002.1004217  0.664
2002 Buttari D, Chini A, Meneghesso G, Zanoni E, Chavarkar P, Coffie R, Zhang NQ, Heikman S, Shen L, Xing H, Zheng C, Mishra UK. Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 118-120. DOI: 10.1109/55.988810  0.785
2002 Buttari D, Chini A, Meneghesso G, Zanoni E, Moran B, Heikman S, Zhang NQ, Shen L, Coffie R, DenBaars SP, Mishra UK. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 76-78. DOI: 10.1109/55.981311  0.637
2002 Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck JS, Mishra UK, Smorchkova I. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Applied Physics Letters. 81: 4395-4397. DOI: 10.1063/1.1526161  0.65
2001 Shen L, Heikman S, Moran B, Coffie R, Zhang NQ, Buttari D, Smorchkova IP, Keller S, DenBaars SP, Mishra UK. AlGaN/AlN/GaN high-power microwave HEMT Ieee Electron Device Letters. 22: 457-459. DOI: 10.1109/55.954910  0.743
2001 Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317  0.732
2001 Marchand H, Zhao L, Zhang N, Moran B, Coffie R, Mishra UK, Speck JS, DenBaars SP, Freitas JA. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors Journal of Applied Physics. 89: 7846-7851. DOI: 10.1063/1.1372160  0.357
2001 Heikman S, Keller S, Moran B, Coffie R, Denbaars SP, Mishra UK. Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN Physica Status Solidi (a) Applied Research. 188: 355-358. DOI: 10.1002/1521-396X(200111)188:1<355::Aid-Pssa355>3.0.Co;2-H  0.489
2000 Chen C, Coffie R, Krishnamurthy K, Keller S, Rodwell M, Mishra UK. Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz Ieee Electron Device Letters. 21: 549-551. DOI: 10.1109/55.887461  0.559
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