Ilan Ben-Yaacov, Ph.D. - Publications

Affiliations: 
2004 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Rowe AA, Bonham AJ, White RJ, Zimmer MP, Yadgar RJ, Hobza TM, Honea JW, Ben-Yaacov I, Plaxco KW. CheapStat: an open-source, "do-it-yourself" potentiostat for analytical and educational applications. Plos One. 6: e23783. PMID 21931613 DOI: 10.1371/journal.pone.0023783  0.52
2004 Gao Y, Ben-Yaacov I, Mishra UK, Hu EL. Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching Journal of Applied Physics. 96: 6925-6927. DOI: 10.1063/1.1806281  0.56
2004 Ben-Yaacov I, Seck YK, Mishra UK, DenBaars SP. AlGaN/GaN current aperture vertical electron transistors with regrown channels Journal of Applied Physics. 95: 2073-2078. DOI: 10.1063/1.1641520  0.68
2003 Gao Y, Stonas AR, Ben-Yaacov I, Mishra U, DenBaars SP, Hu EL. AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching Electronics Letters. 39: 148-149. DOI: 10.1049/el:20030018  0.36
2003 Ben-Yaacov I, Seck YK, DenBaars SP, Hu EL, Mishra UK. Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) Materials Research Society Symposium - Proceedings. 764: 333-338.  0.56
2002 Ben-Yaacov I, Seck YK, Heikman S, DenBaars SP, Mishra UK. AlGaN/GaN current aperture vertical electron transistors Device Research Conference - Conference Digest, Drc. 2002: 31-32. DOI: 10.1109/DRC.2002.1029492  0.84
2001 Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters. 79: 3449-3451. DOI: 10.1063/1.1420573  0.64
2001 Keller S, Heikman S, Ben-Yaacov I, Shen L, DenBaars SP, Mishra UK. Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 775-778. DOI: 10.1002/1521-396X(200112)188:2<775::AID-PSSA775>3.0.CO;2-S  0.64
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