Siddharth Rajan, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

23/252 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, ... ... Rajan S, et al. Polarity governs atomic interaction through two-dimensional materials. Nature Materials. PMID 30297812 DOI: 10.1038/S41563-018-0176-4  0.4
2016 Rajan S, Kumar C. Letter to the editor regarding association of vascular invasion with mortality in follicular thyroid carcinoma. Head & Neck. 38: 158. PMID 26348092 DOI: 10.1002/hed.24209  0.32
2016 Zhang Y, Allerman AA, Krishnamoorthy S, Akyol F, Moseley MW, Armstrong AM, Rajan S. Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs Applied Physics Express. 9. DOI: 10.7567/Apex.9.052102  0.4
2016 Bhardwaj S, Nahar NK, Rajan S, Volakis JL. Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model Ieee Transactions On Electron Devices. 63: 990-996. DOI: 10.1109/Ted.2015.2512912  0.4
2016 Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance Applied Physics Letters. 108. DOI: 10.1063/1.4944998  0.4
2016 Bhardwaj S, Sensale-Rodriguez B, Xing HG, Rajan S, Volakis JL. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4939076  0.4
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627  0.4
2016 Zachariah KC, Rajan SI. Kerala migration study 2014 Economic and Political Weekly. 51: 66-71.  0.48
2015 Bajaj S, Hung TH, Akyol F, Krishnamoorthy S, Khandaker S, Armstrong A, Allerman A, Rajan S. Power switching transistors based on GaN and AlGaN channels Wipda 2015 - 3rd Ieee Workshop On Wide Bandgap Power Devices and Applications. 16-20. DOI: 10.1109/WiPDA.2015.7369292  0.4
2015 Khurgin JB, Bajaj S, Rajan S. Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride Applied Physics Letters. 107. DOI: 10.1063/1.4938745  0.4
2015 Lee CH, McCulloch W, Lee EW, Ma L, Krishnamoorthy S, Hwang J, Wu Y, Rajan S. Transferred large area single crystal MoS2 field effect transistors Applied Physics Letters. 107. DOI: 10.1063/1.4934941  0.4
2015 Gür E, Akyol F, Krishnamoorthy S, Rajan S, Ringel SA. Deep level defects in N-rich and In-rich InxGa1-XN: In composition dependence Superlattices and Microstructures. DOI: 10.1016/J.Spmi.2016.05.009  0.4
2015 Rajan S, Zaidi G, Agarwal G, Mishra A, Agarwal A, Mishra SK, Bhatia E. Genotype–Phenotype Correlation in Indian Patients with MEN2-Associated Pheochromocytoma and Comparison of Clinico-Pathological Attributes with Apparently Sporadic Adrenal Pheochromocytoma World Journal of Surgery. DOI: 10.1007/s00268-015-3255-6  0.32
2015 Rajan S, Agarwal G. What’s in a Name?: Providing Clarity in the Definition of Minimally Invasive Parathyroidectomy World Journal of Surgery. DOI: 10.1007/s00268-015-3152-z  0.32
2015 Rajan SI, Srinivasan S, Bedi AS. Coming Back to Normal?: Census 2011 and Sex Ratios in India Economic and Political Weekly. 50: 33-36.  0.48
2013 Krishnamoorthy S, Kent TF, Yang J, Park PS, Myers RC, Rajan S. GdN nanoisland-based GaN tunnel junctions. Nano Letters. 13: 2570-5. PMID 23662669 DOI: 10.1021/Nl4006723  0.4
2013 Liebig PS, Rajan SI. An aging India: Perspectives, prospects, and policies An Aging India: Perspectives, Prospects, and Policies. 1-248. DOI: 10.4324/9781315870182  0.56
2013 Rajan SI, Varghese VJ, Jayakumar MS. Dreaming mobility and buying vulnerability: Overseas recruitment practices in India Dreaming Mobility and Buying Vulnerability: Overseas Recruitment Practices in India. 1-233. DOI: 10.4324/9781315816241  0.56
2012 Carnevale SD, Kent TF, Phillips PJ, Mills MJ, Rajan S, Myers RC. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. Nano Letters. 12: 915-20. PMID 22268600 DOI: 10.1021/Nl203982P  0.4
2006 Sudha S, Suchindran C, Mutran EJ, Rajan SI, Sarma PS. Marital status, family ties, and self-rated health among elders in South India. Journal of Cross-Cultural Gerontology. 21: 103-20. PMID 17242992 DOI: 10.1007/S10823-006-9027-X  0.48
2003 Rajan SI, Sarma PS, Mishra US. Demography of Indian aging, 2001-2051. Journal of Aging & Social Policy. 15: 11-30. PMID 14696687 DOI: 10.1300/J031v15n02_02  0.56
2001 Rajan SI, Mishra US, Sarma PS. Health concerns among India's elderly. International Journal of Aging & Human Development. 53: 181-94. PMID 11866377  0.56
1998 Mishra US, Ramanathan M, Rajan SI. Induced abortion potential among Indian women. Social Biology. 45: 278-88. PMID 10085740  0.48
Low-probability matches
2016 Sachan UGPS, Rajan SS, Malhotra S, Satyamurthy P. Quench analysis, detection & protection of 5-tesla superconducting solenoid magnet using numerical methods 2016 Ieee 1st International Conference On Control, Measurement and Instrumentation, Cmi 2016. 156-161. DOI: 10.1109/CMI.2016.7413730  0.28
2016 Prakash A, Shin J, Rajan S, Yoon HS. Structural basis of nucleic acid recognition by FK506-binding protein 25 (FKBP25), a nuclear immunophilin. Nucleic Acids Research. PMID 26762975 DOI: 10.1093/nar/gkw001  0.2
2016 Prakash A, Rajan S, Yoon HS. Crystal structure of the FK506 binding domain (FKBD) of human FKBP25 in complex with FK506. Protein Science : a Publication of the Protein Society. PMID 26749369 DOI: 10.1002/pro.2875  0.2
2018 O'Hara DJ, Zhu T, Trout AH, Ahmed AS, Luo YK, Lee CH, Brenner MR, Rajan S, Gupta JA, McComb DW, Kawakami RK. Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit. Nano Letters. PMID 29608316 DOI: 10.1021/Acs.Nanolett.8B00683  0.16
2015 Tovar DA, Zhan W, Rajan SS. A Rotational Cylindrical fMRI Phantom for Image Quality Control. Plos One. 10: e0143172. PMID 26625264 DOI: 10.1371/journal.pone.0143172  0.08
1997 Gulati L, Rajan Irudaya S, Ramalingam A. Women and work in Kerala: A comparison of the 1981 and 1991 censuses Indian Journal of Gender Studies. 4: 231-252. PMID 12321347 DOI: 10.1177/097152159700400205  0.08
2017 Walton-Roberts M, Runnels V, Rajan SI, Sood A, Nair S, Thomas P, Packer C, MacKenzie A, Tomblin Murphy G, Labonté R, Bourgeault IL. Causes, consequences, and policy responses to the migration of health workers: key findings from India. Human Resources For Health. 15: 28. PMID 28381289 DOI: 10.1186/S12960-017-0199-Y  0.04
2016 Mahajan RK, Rajan SJ, Peter JV, Suryawanshi MK. Multiple Small Intestine Perforations after Organophosphorous Poisoning: A Case Report. Journal of Clinical and Diagnostic Research : Jcdr. 10: GD06-7. PMID 27134898 DOI: 10.7860/JCDR/2016/17103.7454  0.04
2016 Rajan S, Paul J, Kumar L. Spontaneous repositioning of a malpositioned peripherally inserted central catheter. Indian Journal of Anaesthesia. 60: 148-9. PMID 27013762 DOI: 10.4103/0019-5049.176283  0.04
2016 Amin AD, Li L, Rajan SS, Gokhale V, Groysman MJ, Pongtornpipat P, Tapia EO, Wang M, Schatz JH. TKI sensitivity patterns of novel kinase-domain mutations suggest therapeutic opportunities for patients with resistant ALK+ tumors. Oncotarget. PMID 27009859 DOI: 10.18632/oncotarget.8173  0.04
2016 Rajan S, Paul J, Kumar L. Carbon dioxide embolism during endoscopic thyroidectomy. Indian Journal of Anaesthesia. 60: 65-6. PMID 26962261 DOI: 10.4103/0019-5049.174806  0.04
2016 Akhtar N, Vishnoi JR, Kumar V, Gupta S, Agrawal P, Rajan S, Dontula PK. Adenocarcinoma of Gall Bladder Metastasis to Cervix: a Case Report with Review of Literature. Journal of Gastrointestinal Cancer. PMID 26961790 DOI: 10.1007/s12029-016-9815-7  0.04
2016 Gao J, Rajan S, Wang B. In-tube derivatization for determination of absolute configuration and enantiomeric purity of chiral compounds by NMR spectroscopy. Magnetic Resonance in Chemistry : Mrc. PMID 26919167 DOI: 10.1002/mrc.4419  0.04
2016 Rajan S, Khanna A, Argalious M, Kimatian SJ, Mascha EJ, Makarova N, Nada EM, Elsharkawy H, Firoozbakhsh F, Avitsian R. Comparison of 2 resident learning tools-interactive screen-based simulated case scenarios versus problem-based learning discussions: a prospective quasi-crossover cohort study. Journal of Clinical Anesthesia. 28: 4-11. PMID 26796607 DOI: 10.1016/j.jclinane.2015.08.003  0.04
2016 Rajan S, Babazade R, Govindarajan SR, Pal R, You J, Mascha EJ, Khanna A, Yang M, Marcano FD, Singh AK, Kaouk J, Turan A. Perioperative factors associated with acute kidney injury after partial nephrectomy. British Journal of Anaesthesia. 116: 70-6. PMID 26675951 DOI: 10.1093/bja/aev416  0.04
2016 Rajan S, Ehlers M, Leduc L. The Difficult Pediatric Airway Complications in Neuroanesthesia. 217-235. DOI: 10.1016/B978-0-12-804075-1.00025-0  0.04
2015 Rajan S, Suppiah RK, Paul J, Kumar L. Anaesthetic management of bilateral hand transplantation Indian Journal of Anaesthesia. 59: 819-820. DOI: 10.4103/0019-5049.171593  0.04
2018 Chakraborty S, Rajan S. Profile of suicidal deaths in married female-A cross sectional study Journal of Indian Academy of Forensic Medicine. 40: 311. DOI: 10.5958/0974-0848.2018.00056.8  0.01
2017 Rajan S, Ishak NS. Estimation of Target Hazard Quotients and Potential Health Risks for Metals by Consumption of Shrimp (Litopenaeus vannamei) in Selangor, Malaysia Sains Malaysiana. 46: 1825-1830. DOI: 10.17576/jsm-2017-4610-20  0.01
2016 Tomar D, Dong Z, Shanmughapriya S, Koch DA, Thomas T, Hoffman NE, Timbalia SA, Goldman SJ, Breves SL, Corbally DP, Nemani N, Fairweather JP, Cutri AR, Zhang X, Song J, ... Rajan S, et al. MCUR1 Is a Scaffold Factor for the MCU Complex Function and Promotes Mitochondrial Bioenergetics. Cell Reports. PMID 27184846 DOI: 10.1016/J.Celrep.2016.04.050  0.01
2016 Silveira-Moriyama L, Glass P, Rajan S, Carvalho R, Reis F, Penatti CA, Muio V. The Hitchhiker's guide to the rhinencephalon. Arquivos De Neuro-Psiquiatria. 74: 329-336. PMID 27097007 DOI: 10.1590/0004-282X20160043  0.01
2016 Wang SL, Cha HA, Lin JR, Francis B, Elizabeth W, Martin P, Rajan S. Impact of Physician Education and a Dedicated Inferior Vena Cava Filter Tracking System on Inferior Vena Cava Filter Use and Retrieval Rates Across a Large US Health Care Region. Journal of Vascular and Interventional Radiology : Jvir. PMID 27017122 DOI: 10.1016/j.jvir.2016.01.130  0.01
2016 Zhou J, Ahmad F, Parikh S, Hoffman NE, Rajan S, Verma VK, Song J, Yuan A, Shanmughapriya S, Guo Y, Gao E, Koch WJ, Woodgett JR, Muniswamy M, Kishore R, et al. Loss of Adult Cardiac Myocyte GSK-3 Leads to Mitotic Catastrophe Resulting in Fatal Dilated Cardiomyopathy. Circulation Research. PMID 26976650 DOI: 10.1161/CIRCRESAHA.116.308544  0.01
2016 Bhaskar JT, Tripathy SC, Sabu P, Laluraj CM, Rajan S. Variation of phytoplankton assemblages of Kongsfjorden in early autumn 2012: a microscopic and pigment ratio-based assessment. Environmental Monitoring and Assessment. 188: 224. PMID 26969156 DOI: 10.1007/s10661-016-5220-8  0.01
2016 Weishaar T, Rajan S, Keller B. Probability of Vitamin D Deficiency by Body Weight and Race/Ethnicity. Journal of the American Board of Family Medicine : Jabfm. 29: 226-32. PMID 26957379 DOI: 10.3122/Jabfm.2016.02.150251  0.01
2016 Seneviratne CJ, Rajan S, Wong SS, Tsang DN, Lai CK, Samaranayake LP, Jin L. Antifungal Susceptibility in Serum and Virulence Determinants of Candida Bloodstream Isolates from Hong Kong. Frontiers in Microbiology. 7: 216. PMID 26955369 DOI: 10.3389/fmicb.2016.00216  0.01
2016 Rajan S, Weishaar T, Keller B. Weight and skin colour as predictors of vitamin D status: results of an epidemiological investigation using nationally representative data. Public Health Nutrition. 1-8. PMID 26868735 DOI: 10.1017/S1368980016000173  0.04
2016 Darling T, Muthuswamy J, Rajan SD. Finite element modeling of human brain response to football helmet impacts. Computer Methods in Biomechanics and Biomedical Engineering. 1-11. PMID 26867124 DOI: 10.1080/10255842.2016.1149574  0.01
2016 Kane AL, Al-Shayeb B, Holec PV, Rajan S, Le Mieux NE, Heinsch SC, Psarska S, Aukema KG, Sarkar CA, Nater EA, Gralnick JA. Toward Bioremediation of Methylmercury Using Silica Encapsulated Escherichia coli Harboring the mer Operon. Plos One. 11: e0147036. PMID 26761437 DOI: 10.1371/Journal.Pone.0147036  0.01
2016 Wills AA, Pérez A, Wang J, Su X, Morgan J, Rajan SS, Leehey MA, Pontone GM, Chou KL, Umeh C, Mari Z, Boyd J. Association Between Change in Body Mass Index, Unified Parkinson's Disease Rating Scale Scores, and Survival Among Persons With Parkinson Disease: Secondary Analysis of Longitudinal Data From NINDS Exploratory Trials in Parkinson Disease Long-term Study 1. Jama Neurology. 1-8. PMID 26751506 DOI: 10.1001/jamaneurol.2015.4265  0.01
2016 Jain PC, Oommen GZ. South Asian migration to Gulf countries: History, policies, development South Asian Migration to Gulf Countries: History, Policies, Development. 1-307. DOI: 10.4324/9781315684338  0.01
2016 Jain S, Rajan S, Srivastava A. Severely comminuted radius fracture presenting as a signature patterned injury Indian Journal of Orthopaedics. 50: 213-217. DOI: 10.4103/0019-5413.177585  0.01
2016 George M, Vaillancourt A, Rajan SI. Sri Lankan Tamil Refugees in India: Conceptual Framework of Repatriation Success Refuge: Canada's Journal On Refugees. 32: 73-82. DOI: 10.25071/1920-7336.40234  0.01
2016 Mabrouk M, Rajan S, Bolic M, Forouzanfar M, Dajani HR, Batkin I. Human Breathing Rate Estimation from Radar Returns Using Harmonically Related Filters Journal of Sensors. 2016. DOI: 10.1155/2016/9891852  0.01
2016 Yu R, Gelfand A, Rajan S, Shahabi C, Liu Y. Geographic segmentation via latent poisson factor model Wsdm 2016 - Proceedings of the 9th Acm International Conference On Web Search and Data Mining. 357-366. DOI: 10.1145/2835776.2835806  0.01
2016 Rajan S, Padmakumar K, Anupama L, Joseph DG, Jose SK, Koshy AP, Shaji A. Hardware implementation of Cryo-Pneumatic Engine Control Unit 2015 International Conference On Control, Communication and Computing India, Iccc 2015. 575-579. DOI: 10.1109/ICCC.2015.7432963  0.01
2016 Sathiyanarayanan M, Rajan S. MYO Armband for physiotherapy healthcare: A case study using gesture recognition application 2016 8th International Conference On Communication Systems and Networks, Comsnets 2016. DOI: 10.1109/COMSNETS.2016.7439933  0.01
2016 Carmalin Sophia A, Lima EC, Allaudeen N, Rajan S. Application of graphene based materials for adsorption of pharmaceutical traces from water and wastewater- a review Desalination and Water Treatment. 1-14. DOI: 10.1080/19443994.2016.1172989  0.01
2016 Zagnit EA, Rajan S, Basch CH. Prevalence and pricing of chain gyms in New York City International Journal of Health Promotion and Education. 54: 50-57. DOI: 10.1080/14635240.2015.1069717  0.04
2016 Rajan S, Gazzali PMM, Chandrasekaran G. Electrical and magnetic phase transition studies of Fe and Mn co-doped BaTiO3 Journal of Alloys and Compounds. 656: 98-109. DOI: 10.1016/j.jallcom.2015.09.199  0.01
2016 Rajan SD, Mobasher B. Damage modeling of ballistic impact in woven fabrics Advanced Fibrous Composite Materials For Ballistic Protection. 501-515. DOI: 10.1016/B978-1-78242-461-1.00017-0  0.01
2016 Rajan SP, Senthil Kumaran S, Kumaraswamidhas LA, Muthukumaran S. An investigation on SA 213-Tube to SA 387-Tube plate using friction welding process Journal of Mechanical Science and Technology. 30: 337-344. DOI: 10.1007/s12206-015-1238-z  0.01
2016 Chandrasekaran V, Rajan SV, Vasani RK, Menon A, Sivakumar PB, Velayutham CS. A crowdsourcing-based platform for better governance Advances in Intelligent Systems and Computing. 397: 519-527. DOI: 10.1007/978-81-322-2671-0_50  0.01
2016 Bajpai A, Muthukumar M, Ahmad I, Ravishankar KV, Parthasarthy VA, Sthapit B, Rao R, Verma JP, Rajan S. Molecular and morphological diversity in locally grown non-commercial (heirloom) Mango varieties of north India Journal of Environmental Biology. 37: 221-228.  0.01
2016 Sahadev Reddy M, Reddy MSN, Rajan ST, Bapaiah B, Chakravarthy IE. Trichloroisocyanuric acid: A cost effective commercial and mild system for the oxidation of primary alcohols to aldehydes Der Pharma Chemica. 8: 286-290.  0.01
2016 Sahadev Reddy M, Reddy MSN, Rajan ST, Vaka S, Chakravarthy IE. Structural identification and characterization of impurities in Esmolol hydrochloride Der Pharma Chemica. 8: 296-300.  0.01
2016 Karthikeyan S, Bhuvaneswari M, Sivasankaran S, Rajan S. Soret and dufour effects on MHD mixed convection heat and mass transfer of a stagnation point flow towards a vertical plate in a porous medium with chemical reaction, radiation and heat generation Journal of Applied Fluid Mechanics. 9: 1447-1455.  0.01
2015 Rajan S, Zalpuri I, Harrington A, Cimpeanu C, Song X, Fan X. Relationship between serum uric acid level and cardiometabolic risks in nondiabetic patients with schizophrenia. International Clinical Psychopharmacology. PMID 26550697 DOI: 10.1097/YIC.0000000000000107  0.01
2015 Alarcon C, Boland BB, Uchizono Y, Moore PC, Peterson B, Rajan S, Rhodes OS, Noske AB, Haataja L, Arvan P, Marsh BJ, Austin J, Rhodes CJ. Pancreatic ß-Cell Adaptive Plasticity in Obesity Increases Insulin Production but Adversely Affects Secretory Function. Diabetes. PMID 26307586 DOI: 10.2337/db15-0792  0.01
2015 Sawant RV, Goyal RK, Rajan SS, Patel HK, Essien EJ, Sansgiry SS. Factors associated with intention to engage in self-protective behavior: The case of over-the-counter acetaminophen products. Research in Social & Administrative Pharmacy : Rsap. PMID 26183416 DOI: 10.1016/j.sapharm.2015.06.005  0.01
2015 Jiang X, Zeng WJ, So HC, Rajan S, Kirubarajan T. Robust Matched Filtering in ℓp-Space Ieee Transactions On Signal Processing. 63: 6184-6199. DOI: 10.1109/TSP.2015.2464179  0.01
2015 Rajan S, Prakash AK. A very compact triple band notched microstrip fed UWB antenna Global Conference On Communication Technologies, Gcct 2015. 906-909. DOI: 10.1109/GCCT.2015.7342793  0.01
2015 Chan YT, Chan F, Rajan S, Lee BH. Direct estimation of time difference of arrival from compressive sensing measurements 2015 3rd International Workshop On Compressed Sensing Theory and Its Applications to Radar, Sonar, and Remote Sensing, Cosera 2015. 273-276. DOI: 10.1109/CoSeRa.2015.7330307  0.01
2014 Mohamed Sarjun Basha K, Raman K, Ahmed SE, Latchumanadoss K, Rajan S. A case of syphilitic aortic aneurysm with sternal erosion and impending rupture. Asian Cardiovascular & Thoracic Annals. PMID 25344618 DOI: 10.1177/0218492314556548  0.01
2004 Liebig PS, Rajan SI. An aging India: perspectives, prospects, and policies. Journal of Aging & Social Policy. 15: 1-9. PMID 14696686 DOI: 10.1300/J031v15n02_01  0.01
1995 Bhat PNM, Navaneetham K, Rajan SI. Maternal Mortality in India: Estimates from a Regression Model Studies in Family Planning. 26: 217. DOI: 10.2307/2137847  0.01
2020 Sohel SH, Xie A, Beam E, Xue H, Razzak T, Bajaj S, Campbell S, White D, Wills K, Cao Y, Lu W, Rajan S. Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors Applied Physics Express. 13: 36502. DOI: 10.35848/1882-0786/Ab7480  0
2020 Cheng J, Yang H, Wang C, Combs N, Freeze C, Shoron O, Wu W, Kalarickal NK, Chandrasekar H, Stemmer S, Rajan S, Lu W. Nanoscale etching of perovskite oxides for field effect transistor applications Journal of Vacuum Science & Technology B. 38: 12201. DOI: 10.1116/1.5122667  0
2020 Lee H, Zhang Y, Chen Z, Rahman MW, Zhao H, Rajan S. Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Ieee Transactions On Electron Devices. 67: 3553-3557. DOI: 10.1109/Ted.2020.3007133  0
2020 Xue H, Hussain K, Razzak T, Gaevski M, Sohel SH, Mollah S, Talesara V, Khan A, Rajan S, Lu W. Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm Ieee Electron Device Letters. 41: 677-680. DOI: 10.1109/Led.2020.2977997  0
2020 Cheng J, Wang C, Freeze C, Shoron O, Combs N, Yang H, Kalarickal NK, Xia Z, Stemmer S, Rajan S, Lu W. High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624. DOI: 10.1109/Led.2020.2976456  0
2020 Sohel SH, Cao Y, Lu W, Rajan S, Rahman MW, Xie A, Beam E, Cui Y, Kruzich M, Xue H, Razzak T, Bajaj S. Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN x Passivation Ieee Electron Device Letters. 41: 19-22. DOI: 10.1109/Led.2019.2951655  0
2020 Amano H, Collazo R, Santi Cd, Einfeldt S, Funato M, Glaab J, Hagedorn S, Hirano A, Hirayama H, Ishii R, Kashima Y, Kawakami Y, Kirste R, Kneissl M, Martin RW, ... ... Rajan S, et al. The 2020 UV Emitter Roadmap Journal of Physics D. DOI: 10.1088/1361-6463/Aba64C  0
2020 Jamal-Eddine Z, Hasan SMN, Gunning B, Chandrasekar H, Crawford M, Armstrong A, Arafin S, Rajan S. Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs Applied Physics Letters. 117: 51103. DOI: 10.1063/5.0015403  0
2020 Zhang Y, Chen Z, Li W, Lee H, Karim R, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707. DOI: 10.1063/5.0008758  0
2020 Kalarickal NK, Xia Z, McGlone JF, Liu Y, Moore W, Arehart AR, Ringel SA, Rajan S. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706. DOI: 10.1063/5.0005531  0
2020 Verma D, Adnan MMR, Rahman MW, Rajan S, Myers RC. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy Applied Physics Letters. 116: 202102. DOI: 10.1063/1.5144778  0
2020 Razzak T, Chandrasekar H, Hussain K, Lee CH, Mamun A, Xue H, Xia Z, Sohel SH, Rahman MW, Bajaj S, Wang C, Lu W, Khan A, Rajan S. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters. 116: 23507. DOI: 10.1063/1.5130590  0
2020 Xue H, Hwang S, Razzak T, Lee C, Calderon Ortiz G, Xia Z, Hasan Sohel S, Hwang J, Rajan S, Khan A, Lu W. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Solid-State Electronics. 164: 107696. DOI: 10.1016/J.Sse.2019.107696  0
2020 Lee H, Kalarickal NK, Rahman MW, Xia Z, Moore W, Wang C, Rajan S. High-permittivity dielectric edge termination for vertical high voltage devices Journal of Computational Electronics. 1-8. DOI: 10.1007/S10825-020-01553-Y  0
2020 Feng Z, Bhuiyan AFMAU, Xia Z, Moore W, Chen Z, McGlone JF, Daughton DR, Arehart AR, Ringel SA, Rajan S, Zhao H. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145. DOI: 10.1002/Pssr.202000145  0
2020 Chandrasekar H, Razzak T, Wang C, Reyes Z, Majumdar K, Rajan S. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates Advanced Electronic Materials. 6: 2000074. DOI: 10.1002/Aelm.202000074  0
2019 Xue H, Lee CH, Hussian K, Razzak T, Abdullah M, Xia Z, Sohel SH, Khan A, Rajan S, Lu W. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz Applied Physics Express. 12: 66502. DOI: 10.7567/1882-0786/Ab1Cf9  0
2019 Zhang Y, Jamal-Eddine Z, Rajan S. Recent progress of tunnel junction-based ultra-violet light emitting diodes Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab1254  0
2019 Jamal-Eddine Z, Zhang Y, Rajan S. Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics International Journal of High Speed Electronics and Systems. 28: 1940012. DOI: 10.1142/S0129156419400123  0
2019 Razzak T, Rajan S, Armstrong A. Ultra-Wide Bandgap AlxGa1-xN Channel Transistors International Journal of High Speed Electronics and Systems. 28: 1940009. DOI: 10.1142/S0129156419400093  0
2019 Ancona MG, Calame JP, Meyer DJ, Rajan S, Downey BP. Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study Ieee Transactions On Electron Devices. 66: 2151-2157. DOI: 10.1109/Ted.2019.2904005  0
2019 Zhang Y, Xia Z, Mcglone J, Sun W, Joishi C, Arehart AR, Ringel SA, Rajan S. Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 1574-1578. DOI: 10.1109/Ted.2018.2889573  0
2019 Xia Z, Wang C, Kalarickal NK, Stemmer S, Rajan S. Design of Transistors Using High-Permittivity Materials Ieee Transactions On Electron Devices. 66: 896-900. DOI: 10.1109/Ted.2018.2888834  0
2019 Joishi C, Zhang Y, Xia Z, Sun W, Arehart AR, Ringel S, Lodha S, Rajan S. Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors Ieee Electron Device Letters. 40: 1241-1244. DOI: 10.1109/Led.2019.2921116  0
2019 Xia Z, Xue H, Joishi C, Mcglone J, Kalarickal NK, Sohel SH, Brenner M, Arehart A, Ringel S, Lodha S, Lu W, Rajan S. $\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Ieee Electron Device Letters. 40: 1052-1055. DOI: 10.1109/Led.2019.2920366  0
2019 Sohel SH, Xie A, Beam E, Xue H, Razzak T, Bajaj S, Cao Y, Lee C, Lu W, Rajan S. Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications Ieee Electron Device Letters. 40: 522-525. DOI: 10.1109/Led.2019.2899100  0
2019 Arafin S, Hasan SMN, Jamal-Eddine Z, Wickramaratne D, Paul B, Rajan S. Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission Semiconductor Science and Technology. 34: 74002. DOI: 10.1088/1361-6641/Ab19Cd  0
2019 Neal AT, Zhang Y, Elhamri S, Rajan S, Mou S. Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas Applied Physics Letters. 115: 262103. DOI: 10.1063/1.5131736  0
2019 Xia Z, Chandrasekar H, Moore W, Wang C, Lee AJ, McGlone J, Kalarickal NK, Arehart A, Ringel S, Yang F, Rajan S. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Applied Physics Letters. 115: 252104. DOI: 10.1063/1.5130669  0
2019 Kalarickal NK, Xia Z, McGlone J, Krishnamoorthy S, Moore W, Brenner M, Arehart AR, Ringel SA, Rajan S. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 Applied Physics Letters. 115: 152106. DOI: 10.1063/1.5123149  0
2019 McGlone JF, Xia Z, Joishi C, Lodha S, Rajan S, Ringel S, Arehart AR. Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs Applied Physics Letters. 115: 153501. DOI: 10.1063/1.5118250  0
2019 Mazumder B, Sarker J, Zhang Y, Johnson JM, Zhu M, Rajan S, Hwang J. Atomic scale investigation of chemical heterogeneity in β-(AlxGa1−x)2O3 films using atom probe tomography Applied Physics Letters. 115: 132105. DOI: 10.1063/1.5113627  0
2019 Razzak T, Hwang S, Coleman A, Xue H, Sohel SH, Bajaj S, Zhang Y, Lu W, Khan A, Rajan S. Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors Applied Physics Letters. 115: 43502. DOI: 10.1063/1.5108529  0
2019 Chandrasekar H, Cheng J, Wang T, Xia Z, Combs NG, Freeze CR, Marshall PB, McGlone J, Arehart A, Ringel S, Janotti A, Stemmer S, Lu W, Rajan S. Velocity saturation in La-doped BaSnO3 thin films Applied Physics Letters. 115: 92102. DOI: 10.1063/1.5097791  0
2019 Biswas D, Joishi C, Biswas J, Thakar K, Rajan S, Lodha S. Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric Applied Physics Letters. 114: 212106. DOI: 10.1063/1.5089627  0
2019 Sarker J, Zhang Y, Zhu M, Rajan S, Hwang J, Mazumder B. Understanding the Growth Mechanism of β-(AlxGa1−x)2O3 by Atom Probe Tomography Microscopy and Microanalysis. 25: 2508-2509. DOI: 10.1017/S1431927619013278  0
2018 Armstrong AM, Klein BA, Colon A, Allerman AA, Douglas EA, Baca AG, Fortune TR, Abate VM, Bajaj S, Rajan S. Ultra-wide band gap AlGaN polarization-doped field effect transistor Japanese Journal of Applied Physics. 57: 074103. DOI: 10.7567/Jjap.57.074103  0
2018 Pratiyush AS, Krishnamoorthy S, Kumar S, Xia Z, Muralidharan R, Rajan S, Nath DN. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector Japanese Journal of Applied Physics. 57: 60313. DOI: 10.7567/Jjap.57.060313  0
2018 Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H, Rajan S. Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes Applied Physics Express. 11: 31101. DOI: 10.7567/Apex.11.031101  0
2018 Pratiyush AS, Xia Z, Kumar S, Zhang Y, Joishi C, Muralidharan R, Rajan S, Nath DN. MBE-Grown $\beta$ -Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107 Ieee Photonics Technology Letters. 30: 2025-2028. DOI: 10.1109/Lpt.2018.2874725  0
2018 Sohel SH, Xie A, Beam E, Xue H, Roussos JA, Razzak T, Bajaj S, Cao Y, Meyer DJ, Lu W, Rajan S. X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors Ieee Electron Device Letters. 39: 1884-1887. DOI: 10.1109/Led.2018.2874443  0
2018 Mcglone JF, Xia Z, Zhang Y, Joishi C, Lodha S, Rajan S, Ringel SA, Arehart AR. Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate Ieee Electron Device Letters. 39: 1042-1045. DOI: 10.1109/Led.2018.2843344  0
2018 Xia Z, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y, Brenner M, Lodha S, Rajan S. Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Ieee Electron Device Letters. 39: 568-571. DOI: 10.1109/Led.2018.2805785  0
2018 Bajaj S, Allerman A, Armstrong A, Razzak T, Talesara V, Sun W, Sohel SH, Zhang Y, Lu W, Arehart AR, Akyol F, Rajan S. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm Ieee Electron Device Letters. 39: 256-259. DOI: 10.1109/Led.2017.2780221  0
2018 Joishi C, Xia Z, McGlone J, Zhang Y, Arehart AR, Ringel S, Lodha S, Rajan S. Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters. 113: 123501. DOI: 10.1063/1.5039502  0
2018 Zhang Y, Joishi C, Xia Z, Brenner M, Lodha S, Rajan S. Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors Applied Physics Letters. 112: 233503. DOI: 10.1063/1.5037095  0
2018 Gao H, Muralidharan S, Pronin N, Karim MR, White SM, Asel T, Foster G, Krishnamoorthy S, Rajan S, Cao LR, Higashiwaki M, von Wenckstern H, Grundmann M, Zhao H, Look DC, et al. Optical signatures of deep level defects in Ga2O3 Applied Physics Letters. 112: 242102. DOI: 10.1063/1.5026770  0
2018 Zhang Y, Neal A, Xia Z, Joishi C, Johnson JM, Zheng Y, Bajaj S, Brenner M, Dorsey D, Chabak K, Jessen G, Hwang J, Mou S, Heremans JP, Rajan S. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Applied Physics Letters. 112: 173502. DOI: 10.1063/1.5025704  0
2018 Zhang Y, Jamal-Eddine Z, Akyol F, Bajaj S, Johnson JM, Calderon G, Allerman AA, Moseley MW, Armstrong AM, Hwang J, Rajan S. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Applied Physics Letters. 112: 071107. DOI: 10.1063/1.5017045  0
2018 Razzak T, Hwang S, Coleman A, Bajaj SS, Xue H, Zhang Y, Jamal-Eddine Z, Sohel S, Lu W, Khan MA, Rajan S. RF operation in graded Al x Ga1−x N (x = 0.65 to 0.82) channel transistors Electronics Letters. 54: 1351-1353. DOI: 10.1049/El.2018.6897  0
2017 Akyol F, Zhang Y, Krishnamoorthy S, Rajan S. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content Applied Physics Express. 10: 121003. DOI: 10.7567/Apex.10.121003  0
2017 Krishnamoorthy S, Xia Z, Bajaj S, Brenner M, Rajan S. Delta-doped β-gallium oxide field-effect transistor Applied Physics Express. 10: 51102. DOI: 10.7567/Apex.10.051102  0
2017 Lee CH, Lee EW, McCulloch W, Jamal-Eddine Z, Krishnamoorthy S, Newburger MJ, Kawakami RK, Wu Y, Rajan S. A self-limiting layer-by-layer etching technique for 2H-MoS2 Applied Physics Express. 10: 35201. DOI: 10.7567/Apex.10.035201  0
2017 Bajaj S, Yang Z, Akyol F, Park PS, Zhang Y, Price AL, Krishnamoorthy S, Meyer DJ, Rajan S. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity Ieee Transactions On Electron Devices. 64: 3114-3119. DOI: 10.1109/Ted.2017.2713784  0
2017 Zhang Y, Krishnamoorthy S, Akyol F, Johnson JM, Allerman AA, Moseley MW, Armstrong AM, Hwang J, Rajan S. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs Applied Physics Letters. 111: 051104. DOI: 10.1063/1.4997328  0
2017 Lee CH, Krishnamoorthy S, Paul PK, O'Hara DJ, Brenner MR, Kawakami RK, Arehart AR, Rajan S. Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 111: 202101. DOI: 10.1063/1.4994582  0
2017 Krishnamoorthy S, Xia Z, Joishi C, Zhang Y, McGlone J, Johnson J, Brenner M, Arehart AR, Hwang J, Lodha S, Rajan S. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied Physics Letters. 111: 023502. DOI: 10.1063/1.4993569  0
2017 Pratiyush AS, Krishnamoorthy S, Solanke SV, Xia Z, Muralidharan R, Rajan S, Nath DN. High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Applied Physics Letters. 110: 221107. DOI: 10.1063/1.4984904  0
2017 Zhang Y, Krishnamoorthy S, Akyol F, Bajaj S, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Tunnel-injected sub-260 nm ultraviolet light emitting diodes Applied Physics Letters. 110: 201102. DOI: 10.1063/1.4983352  0
2017 Lee CH, Krishnamoorthy S, O'Hara DJ, Brenner MR, Johnson JM, Jamison JS, Myers RC, Kawakami RK, Hwang J, Rajan S. Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates Journal of Applied Physics. 121: 094302. DOI: 10.1063/1.4977697  0
2017 Johnson JM, Hee Lee C, Krishnamoorthy S, Rajan S, Hwang J. Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface Microscopy and Microanalysis. 23: 1728-1729. DOI: 10.1017/S1431927617009308  0
2017 Johnson JM, Krishnamoorthy S, Rajan S, Hwang J. Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces Microscopy and Microanalysis. 23: 1454-1455. DOI: 10.1017/S1431927617007930  0
2017 Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501  0
2016 Khurgin JB, Bajaj S, Rajan S. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors Applied Physics Express. 9: 094101. DOI: 10.7567/Apex.9.094101  0
2016 Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes Applied Physics Letters. 109: 191105. DOI: 10.1063/1.4967698  0
2016 Krishnamoorthy S, Lee EW, Lee CH, Zhang Y, McCulloch WD, Johnson JM, Hwang J, Wu Y, Rajan S. High current density 2D/3D MoS2/GaN Esaki tunnel diodes Applied Physics Letters. 109: 183505. DOI: 10.1063/1.4966283  0
2016 Zúñiga-Pérez J, Consonni V, Lymperakis L, Kong X, Trampert A, Fernández-Garrido S, Brandt O, Renevier H, Keller S, Hestroffer K, Wagner MR, Reparaz JS, Akyol F, Rajan S, Rennesson S, et al. Polarity in GaN and ZnO: Theory, measurement, growth, and devices Applied Physics Reviews. 3: 41303. DOI: 10.1063/1.4963919  0
2016 Bajaj S, Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. AlGaN channel field effect transistors with graded heterostructure ohmic contacts Applied Physics Letters. 109: 133508. DOI: 10.1063/1.4963860  0
2016 Zhang Y, Krishnamoorthy S, Akyol F, Allerman AA, Moseley MW, Armstrong AM, Rajan S. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Applied Physics Letters. 109: 121102. DOI: 10.1063/1.4962900  0
2016 Akyol F, Krishnamoorthy S, Zhang Y, Johnson J, Hwang J, Rajan S. Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)] Applied Physics Letters. 109: 109901. DOI: 10.1063/1.4961678  0
2016 Bhardwaj S, Rajan S, Volakis JL. Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)] Journal of Applied Physics. 120: 049901. DOI: 10.1063/1.4960091  0
2016 Bhardwaj S, Rajan S, Volakis JL. Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors Journal of Applied Physics. 119. DOI: 10.1063/1.4950795  0
2016 Yang Z, Zhang Y, Krishnamoorthy S, Nath DN, Khurgin JB, Rajan S. Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter Applied Physics Letters. 108: 192101. DOI: 10.1063/1.4949489  0
2016 Johnson JM, Lee CH, Rajan S, McCulloch W, Wu Y, Hwang J. Exploring Thermal Properties of M0S2 Using In Situ Quantitative STEM Microscopy and Microanalysis. 22: 912-913. DOI: 10.1017/S1431927616005407  0
2015 Akyol F, Krishnamoorthy S, Zhang Y, Rajan S. GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions Applied Physics Express. 8. DOI: 10.7567/Apex.8.082103  0
2015 Yang Z, Nath DN, Zhang Y, Khurgin JB, Rajan S. Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors Ieee Electron Device Letters. 36: 436-438. DOI: 10.1109/Led.2015.2413934  0
2015 Park PS, Krishnamoorthy S, Bajaj S, Nath DN, Rajan S. Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs Ieee Electron Device Letters. 36: 226-228. DOI: 10.1109/Led.2015.2394503  0
2015 Bajaj S, Shoron OF, Park PS, Krishnamoorthy S, Akyol F, Hung TH, Reza S, Chumbes EM, Khurgin J, Rajan S. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors Applied Physics Letters. 107. DOI: 10.1063/1.4933181  0
2015 Lee EW, Lee CH, Paul PK, Ma L, McCulloch WD, Krishnamoorthy S, Wu Y, Arehart AR, Rajan S. Layer-transferred MoS2/GaN PN diodes Applied Physics Letters. 107. DOI: 10.1063/1.4930234  0
2015 Kornblum L, Jin EN, Shoron O, Boucherit M, Rajan S, Ahn CH, Walker FJ. Electronic transport of titanate heterostructures and their potential as channels on (001) Si Journal of Applied Physics. 118: 105301. DOI: 10.1063/1.4930140  0
2015 Zhang Y, Krishnamoorthy S, Johnson JM, Akyol F, Allerman A, Moseley MW, Armstrong A, Hwang J, Rajan S. Interband tunneling for hole injection in III-nitride ultraviolet emitters Applied Physics Letters. 106. DOI: 10.1063/1.4917529  0
2015 Arulkumaran S, Ng GI, Manoj Kumar CM, Ranjan K, Teo KL, Shoron OF, Rajan S, Bin Dolmanan S, Tripathy S. Electron velocity of 6 × 107cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906970  0
2015 Yang Z, Zhang Y, Nath DN, Khurgin JB, Rajan S. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier Applied Physics Letters. 106: 032101. DOI: 10.1063/1.4906287  0
2014 Krishnamoorthy S, Akyol F, Rajan S. III-nitride tunnel junctions for efficient solid state lighting Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2039382  0
2014 Hung TH, Park PS, Krishnamoorthy S, Nath DN, Rajan S. Interface charge engineering for enhancement-mode GaN MISHEMTs Ieee Electron Device Letters. 35: 312-314. DOI: 10.1109/Led.2013.2296659  0
2014 Bajaj S, Hung T, Akyol F, Nath D, Rajan S. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage Applied Physics Letters. 105: 263503. DOI: 10.1063/1.4905323  0
2014 Lee EW, Ma L, Nath DN, Lee CH, Arehart A, Wu Y, Rajan S. Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions Applied Physics Letters. 105: 203504. DOI: 10.1063/1.4901048  0
2014 Yang Z, Nath D, Rajan S. Negative differential resistance in GaN tunneling hot electron transistors Applied Physics Letters. 105: 202111. DOI: 10.1063/1.4900780  0
2014 Krishnamoorthy S, Akyol F, Rajan S. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes Applied Physics Letters. 105. DOI: 10.1063/1.4897342  0
2014 Ma L, Nath DN, Lee EW, Lee CH, Yu M, Arehart A, Rajan S, Wu Y. Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1 Applied Physics Letters. 105: 72105. DOI: 10.1063/1.4893143  0
2014 Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4883890  0
2014 Boucherit M, Shoron O, Jackson CA, Cain TA, Buffon MLC, Polchinski C, Stemmer S, Rajan S. Modulation of over 1014 cm−2 electrons in SrTiO3/GdTiO3 heterostructures Applied Physics Letters. 104: 182904. DOI: 10.1063/1.4875796  0
2014 Hung T, Sasaki K, Kuramata A, Nath DN, Park PS, Polchinski C, Rajan S. Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 Applied Physics Letters. 104: 162106. DOI: 10.1063/1.4873546  0
2014 Laskar MR, Nath DN, Ma L, Lee EW, Lee CH, Kent T, Yang Z, Mishra R, Roldan MA, Idrobo JC, Pantelides ST, Pennycook SJ, Myers RC, Wu Y, Rajan S. P-type doping of MoS2 thin films using Nb Applied Physics Letters. 104. DOI: 10.1063/1.4867197  0
2013 Su M, Chen C, Rajan S. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems Semiconductor Science and Technology. 28: 074012. DOI: 10.1088/0268-1242/28/7/074012  0
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0
2013 Rajan S, Jena D. Gallium nitride electronics Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/070301  0
2013 Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4834698  0
2013 Yang J, Cui S, Ma TP, Hung TH, Nath D, Krishnamoorthy S, Rajan S. A study of electrically active traps in AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4826922  0
2013 Mazumder B, Esposto M, Hung TH, Mates T, Rajan S, Speck JS. Characterization of a dielectric/GaN system using atom probe tomography Applied Physics Letters. 103: 151601. DOI: 10.1063/1.4824211  0
2013 Akyol F, Krishnamoorthy S, Rajan S. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop Applied Physics Letters. 103. DOI: 10.1063/1.4819737  0
2013 Nath DN, Yang ZC, Lee CY, Park PS, Wu YR, Rajan S. Unipolar vertical transport in GaN/AlGaN/GaN heterostructures Applied Physics Letters. 103. DOI: 10.1063/1.4813309  0
2013 Laskar MR, Ma L, Kannappan S, Sung Park P, Krishnamoorthy S, Nath DN, Lu W, Wu Y, Rajan S. Large area single crystal (0001) oriented MoS2 Applied Physics Letters. 102. DOI: 10.1063/1.4811410  0
2013 Boucherit M, Shoron OF, Cain TA, Jackson CA, Stemmer S, Rajan S. Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4811273  0
2013 Park PS, Reddy KM, Nath DN, Yang Z, Padture NP, Rajan S. Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion Applied Physics Letters. 102. DOI: 10.1063/1.4801940  0
2013 Krishnamoorthy S, Akyol F, Park PS, Rajan S. Low resistance GaN/InGaN/GaN tunnel junctions Applied Physics Letters. 102. DOI: 10.1063/1.4796041  0
2013 Hung TH, Krishnamoorthy S, Esposto M, Neelim Nath D, Sung Park P, Rajan S. Interface charge engineering at atomic layer deposited dielectric/III- nitride interfaces Applied Physics Letters. 102. DOI: 10.1063/1.4793483  0
2013 Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010  0
2013 Kim H, Nath D, Rajan S, Lu W. Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors Journal of Electronic Materials. 42: 10-14. DOI: 10.1007/S11664-012-2109-3  0
2012 Carnevale SD, Kent TF, Phillips PJ, Golam Sarwar ATM, Klie RF, Rajan S, Myers RC. Graded nanowire ultraviolet LEDs by polarization engineering Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.970450  0
2012 Park PS, Nath DN, Rajan S. Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures Ieee Electron Device Letters. 33: 991-993. DOI: 10.1109/Led.2012.2196973  0
2012 Fang T, Wang R, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance of GaN transistors Ieee Electron Device Letters. 33: 709-711. DOI: 10.1109/Led.2012.2187169  0
2012 Ramesh P, Krishnamoorthy S, Rajan S, Washington GN. Fabrication and characterization of a piezoelectric gallium nitride switch for optical MEMS applications Smart Materials and Structures. 21. DOI: 10.1088/0964-1726/21/9/094003  0
2012 Stemmer S, Chobpattana V, Rajan S. Frequency dispersion in III-V metal-oxide-semiconductor capacitors Applied Physics Letters. 100. DOI: 10.1063/1.4724330  0
2012 Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. “Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” Journal of Applied Physics. 111: 99901. DOI: 10.1063/1.4711074  0
2012 Akyol F, Nath DN, Krishnamoorthy S, Park PS, Rajan S. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Applied Physics Letters. 100. DOI: 10.1063/1.3694967  0
2012 Nath DN, Park PS, Esposto M, Brown D, Keller S, Mishra UK, Rajan S. Polarization engineered 1-dimensional electron gas arrays Journal of Applied Physics. 111. DOI: 10.1063/1.3687938  0
2012 Park PS, Nath DN, Krishnamoorthy S, Rajan S. Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization Applied Physics Letters. 100: 63507. DOI: 10.1063/1.3685483  0
2012 Lecce VD, Krishnamoorthy S, Esposto M, Hung T-, Chini A, Rajan S. Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al 2 O 3 -on-GaN MOS diodes Electronics Letters. 48: 347-348. DOI: 10.1049/El.2011.4046  0
2011 Akyol F, Nath DN, Gür E, Park PS, Rajan S. N-polar III-nitride green (540 nm) light emitting diode Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.052101  0
2011 Nath DN, Gür E, Ringel SA, Rajan S. Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar Inx Ga1-x N Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3562277  0
2011 Esposto M, Chini A, Rajan S. Analytical Model for Power Switching GaN-Based HEMT Design Ieee Transactions On Electron Devices. 58: 1456-1461. DOI: 10.1109/Ted.2011.2112771  0
2011 Park PS, Rajan S. Simulation of short-channel effects in N- and Ga-polar AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 58: 704-708. DOI: 10.1109/Ted.2010.2099121  0
2011 Moetakef P, Cain TA, Ouellette DG, Zhang JY, Klenov DO, Janotti A, Van De Walle CG, Rajan S, Allen SJ, Stemmer S. Electrostatic carrier doping of GdTiO 3/SrTiO 3 interfaces Applied Physics Letters. 99. DOI: 10.1063/1.3669402  0
2011 Krishnamoorthy S, Park PS, Rajan S. Demonstration of forward inter-band tunneling in GaN by polarization engineering Applied Physics Letters. 99. DOI: 10.1063/1.3666862  0
2011 Gür E, Zhang Z, Krishnamoorthy S, Rajan S, Ringel SA. Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)] Applied Physics Letters. 99: 229906. DOI: 10.1063/1.3666222  0
2011 Hung T, Esposto M, Rajan S. Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors Applied Physics Letters. 99: 162104. DOI: 10.1063/1.3653805  0
2011 Son J, Rajan S, Stemmer S, James Allen S. A heterojunction modulation-doped Mott transistor Journal of Applied Physics. 110. DOI: 10.1063/1.3651612  0
2011 Esposto M, Krishnamoorthy S, Nath DN, Bajaj S, Hung T, Rajan S. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride Applied Physics Letters. 99: 133503. DOI: 10.1063/1.3645616  0
2011 Gür E, Zhang Z, Krishnamoorty S, Rajan S, Ringel SA. Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies Applied Physics Letters. 99. DOI: 10.1063/1.3631678  0
2011 Mishra R, Restrepo OD, Rajan S, Windl W. First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures Applied Physics Letters. 98: 232114. DOI: 10.1063/1.3598399  0
2010 Ramesh P, Krishnamoorthy S, Park PS, Rajan S, Washington GN. Distributed intelligence using gallium nitride based active devices Proceedings of Spie - the International Society For Optical Engineering. 7643. DOI: 10.1117/12.847919  0
2010 Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452  0
2010 Krishnamoorthy S, Nath DN, Akyol F, Park PS, Esposto M, Rajan S. Polarization-engineered GaN/InGaN/GaN tunnel diodes Applied Physics Letters. 97. DOI: 10.1063/1.3517481  0
2010 Kolluri S, Keller S, Brown D, Gupta G, Mishra UK, DenBaars SP, Rajan S. Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] Journal of Applied Physics. 108: 119902. DOI: 10.1063/1.3514587  0
2010 Nath DN, Keller S, Hsieh E, DenBaars SP, Mishra UK, Rajan S. Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure Applied Physics Letters. 97: 162106. DOI: 10.1063/1.3505319  0
2010 Kolluri S, Keller S, Brown D, Gupta G, Rajan S, DenBaars SP, Mishra UK. Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates Journal of Applied Physics. 108: 74502. DOI: 10.1063/1.3488641  0
2010 Nath DN, Gür E, Ringel SA, Rajan S. Molecular beam epitaxy of N-polar InGaN Applied Physics Letters. 97. DOI: 10.1063/1.3478226  0
2010 Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A. Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Solid-State Electronics. 54: 1291-1294. DOI: 10.1016/J.Sse.2010.06.008  0
2010 Emre Koksal C, Ekici E, Rajan S. Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas Nano Communication Networks. 1: 160-172. DOI: 10.1016/J.Nancom.2010.09.001  0
2009 Tamboli AC, Schmidt MC, Rajan S, Speck JS, Mishra UK, Denbaars SP, Hu EL. Smooth top-down photoelectrochemical etching of m -plane GaN Journal of the Electrochemical Society. 156: H47-H51. DOI: 10.1149/1.3005978  0
2009 Fujiwara T, Rajan S, Keller S, Higashiwaki M, Speck JS, DenBaars SP, Mishra UK. Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors Applied Physics Express. 2: 11001. DOI: 10.1143/Apex.2.011001  0
2009 Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars SP, Mishra UK. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 313-315. DOI: 10.1109/Led.2009.2012444  0
2009 Brown DF, Rajan S, Keller S, Hsieh Y, DenBaars SP, Mishra UK. Electron transport in nitrogen-polar high electron mobility transistors Physica Status Solidi (C). 6: S960-S963. DOI: 10.1002/Pssc.200880799  0
2008 Imer B, Haskell B, Rajan S, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555. DOI: 10.1557/Jmr.2008.0069  0
2008 Raman A, Dasgupta S, Rajan S, Speck JS, Mishra UK. AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit Japanese Journal of Applied Physics. 47: 3359-3361. DOI: 10.1143/Jjap.47.3359  0
2008 Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101  0
2008 Rajan S, Mishra UK, Palacios T. AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS International Journal of High Speed Electronics and Systems. 18: 913-922. DOI: 10.1142/S0129156408005874  0
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0
2008 Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132  0
2008 Brown DF, Rajan S, Keller S, Hsieh Y, DenBaars SP, Mishra UK. Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress Applied Physics Letters. 93: 42104. DOI: 10.1063/1.2965483  0
2008 Nidhi, Rajan S, Keller S, Wu F, DenBaars SP, Speck JS, Mishra UK. Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors Journal of Applied Physics. 103: 124508. DOI: 10.1063/1.2942394  0
2008 Keller S, Suh CS, Chen Z, Chu R, Rajan S, Fichtenbaum NA, Furukawa M, DenBaars SP, Speck JS, Mishra UK. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838214  0
2008 Vert AV, Rajan S. Properties of oxide deposited on c-plane AlGaN/GaN heterostructure Electronics Letters. 44: 773-774. DOI: 10.1049/El:20080839  0
2008 Imer B, Schmidt M, Haskell B, Rajan S, Zhong B, Kim K, Wu F, Mates T, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712. DOI: 10.1002/Pssa.200723403  0
2007 Rajan S, Chini A, Wong MH, Speck JS, Mishra UK. N-polar GaN∕AlGaN∕GaN high electron mobility transistors Journal of Applied Physics. 102: 44501. DOI: 10.1063/1.2769950  0
2007 Fehlberg TB, Umana-Membreno GA, Gallinat CS, Koblmüller G, Bernardis S, Nener BD, Parish G, Speck JS. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2423-2427. DOI: 10.1002/Pssc.200674780  0
2007 Wong MH, Rajan S, Chu RM, Palacios T, Suh CS, McCarthy LS, Keller S, Speck JS, Mishra UK. N-face high electron mobility transistors with a GaN-spacer Physica Status Solidi (a) Applications and Materials Science. 204: 2049-2053. DOI: 10.1002/Pssa.200674879  0
2006 Recht F, McCarthy L, Rajan S, Chakraborty A, Poblenz C, Corrion A, Speck JS, Mishra UK. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207. DOI: 10.1109/Led.2006.870419  0
2006 Corrion A, Poblenz C, Waltereit P, Palacios T, Rajan S, Mishra UK, Speck JS. Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Ieice Transactions On Electronics. 89: 906-912. DOI: 10.1093/Ietele/E89-C.7.906  0
2006 Simon J, Wang A, Xing H, Rajan S, Jena D. Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168253  0
2006 Rajan S, DenBaars SP, Mishra UK, Xing H(, Jena D. Electron mobility in graded AlGaN alloys Applied Physics Letters. 88: 42103. DOI: 10.1063/1.2165190  0
2005 Simon J, Wang K, Xing H, Jena D, Rajan S. Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff17-04  0
2005 Rajan S, Wong M, Fu Y, Wu F, Speck JS, Mishra UK. Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures Japanese Journal of Applied Physics. 44. DOI: 10.1143/Jjap.44.L1478  0
2005 Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin P, Smorchkova I, Heying B. Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Journal of Vacuum Science & Technology B. 23: 1562-1567. DOI: 10.1116/1.1943443  0
2005 Palacios T, Rajan S, Chakraborty A, Heikman S, Keller S, DenBaars SP, Mishra UK. Influence of the dynamic access resistance in the gm and f T linearity of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 52: 2117-2122. DOI: 10.1109/Ted.2005.856180  0
2005 Palacios T, Chakraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK. High-power AlGaN/GaN HEMTs for Ka-band applications Ieee Electron Device Letters. 26: 781-783. DOI: 10.1109/Led.2005.857701  0
2005 Yu H, McCarthy L, Rajan S, Keller S, Denbaars S, Speck J, Mishra U. Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts Ieee Electron Device Letters. 26: 283-285. DOI: 10.1109/Led.2005.846583  0
2004 Waltereit P, Poblenz C, Rajan S, Wu F, Mishra UK, Speck JS. Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors Japanese Journal of Applied Physics. 43: 1520. DOI: 10.1143/Jjap.43.L1520  0
2004 Rajan S, Chakraborty A, Mishra UK, Poblenz C, Waltereit P, Speck JS. MBE-grown AlGaN/GaN HEMTs on SiC International Journal of High Speed Electronics and Systems. 14: 732-737. DOI: 10.1142/S0129156404002752  0
2004 Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1145-1149. DOI: 10.1116/1.1752907  0
2004 Rajan S, Waltereit P, Poblenz C, Heikman SJ, Green DS, Speck JS, Mishra UK. Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE Ieee Electron Device Letters. 25: 247-249. DOI: 10.1109/Led.2004.826977  0
2004 Rajan S, Xing H, DenBaars S, Mishra UK, Jena D. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications Applied Physics Letters. 84: 1591-1593. DOI: 10.1063/1.1652254  0
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