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Rongming Chu, Ph.D. - Publications

Affiliations: 
2008 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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42 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Han S, Song J, Chu R. Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode Ieee Transactions On Electron Devices. 67: 69-74. DOI: 10.1109/Ted.2019.2953843  0.488
2020 Hontz MR, Chu R, Khanna R. Effect of Substrate Choice on Transient Performance of Lateral GaN FETs Ieee Journal of the Electron Devices Society. 8: 331-335. DOI: 10.1109/Jeds.2020.2981607  0.358
2020 Chu R. GaN power switches on the rise: Demonstrated benefits and unrealized potentials Applied Physics Letters. 116: 90502. DOI: 10.1063/1.5133718  0.513
2019 Song J, Han S, Chu R. High- ${Q}$ GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study Ieee Transactions On Electron Devices. 66: 4134-4139. DOI: 10.1109/Ted.2019.2933742  0.382
2018 Amano H, Baines Y, Beam E, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R, De Santi C, De Souza MM, Decoutere S, Di Cioccio L, Eckardt B, et al. The 2018 GaN power electronics roadmap Journal of Physics D: Applied Physics. 51: 163001. DOI: 10.1088/1361-6463/Aaaf9D  0.433
2017 Cao Y, Li R, Williams AJ, Chu R, Corrion AL, Chang R. Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition Journal of Materials Research. 32: 1611-1617. DOI: 10.1557/Jmr.2017.126  0.4
2017 Hontz MR, Cao Y, Chen M, Li R, Garrido A, Chu R, Khanna R. Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers Ieee Transactions On Electron Devices. 64: 2172-2178. DOI: 10.1109/Ted.2017.2686778  0.474
2016 Li R, Cao Y, Chen M, Chu R. 600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor Ieee Electron Device Letters. 37: 1466-1469. DOI: 10.1109/Led.2016.2614515  0.525
2016 Chu R, Cao Y, Chen M, Li R, Zehnder D. An experimental demonstration of GaN CMOS technology Ieee Electron Device Letters. 37: 269-271. DOI: 10.1109/Led.2016.2515103  0.481
2016 Hughes B, Chu R, Lazar J, Boutros K. Increasing the switching frequency of GaN HFET converters Technical Digest - International Electron Devices Meeting, Iedm. 2016: 16.7.1-16.7.4. DOI: 10.1109/IEDM.2015.7409714  0.312
2016 Cao Y, Chu R, Li R, Chen M, Williams AJ. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier Applied Physics Letters. 108. DOI: 10.1063/1.4943946  0.494
2016 Cao Y, Chu R, Li R, Chen M, Chang R, Hughes B. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth Applied Physics Letters. 108. DOI: 10.1063/1.4941814  0.455
2013 Brown DF, Shinohara K, Corrion AL, Chu R, Williams A, Wong JC, Alvarado-Rodriguez I, Grabar R, Johnson M, Butler CM, Santos D, Burnham SD, Robinson JF, Zehnder D, Kim SJ, et al. High-speed, enhancement-mode GaN power switch with regrown n+ GaN ohmic contacts and staircase field plates Ieee Electron Device Letters. 34: 1118-1120. DOI: 10.1109/Led.2013.2273172  0.539
2011 Higashiwaki M, Pei Y, Chu R, Mishra UK. Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 58: 1681-1686. DOI: 10.1109/Ted.2011.2131653  0.741
2011 Chu R, Corrion A, Chen M, Li R, Wong D, Zehnder D, Hughes B, Boutros K. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance Ieee Electron Device Letters. 32: 632-634. DOI: 10.1109/Led.2011.2118190  0.471
2011 Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041  0.717
2010 Chen Z, Pei Y, Chu R, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors Physica Status Solidi (C). 7: 2404-2407. DOI: 10.1002/Pssc.200983890  0.748
2009 Chu R, Chen Z, Pei Y, Newman S, DenBaars SP, Mishra UK. MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications Ieee Electron Device Letters. 30: 910-912. DOI: 10.1109/Led.2009.2026659  0.76
2009 Pei Y, Vampola KJ, Chen Z, Chu R, DenBaars SP, Mishra UK. AlGaN/GaN HEMT with a transparent gate electrode Ieee Electron Device Letters. 30: 439-441. DOI: 10.1109/Led.2009.2017282  0.679
2009 Brown DF, Chu R, Keller S, DenBaars SP, Mishra UK. Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition Applied Physics Letters. 94: 153506. DOI: 10.1063/1.3122347  0.58
2009 Higashiwaki M, Chen Z, Chu R, Pei Y, Keller S, Mishra UK, Hirose N, Matsui T, Mimura T. A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 94: 53513. DOI: 10.1063/1.3079798  0.683
2008 Koblmüller G, Chu R, Wu F, Mishra UK, Speck JS. Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime Applied Physics Express. 1: 61103. DOI: 10.1143/Apex.1.061103  0.514
2008 Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101  0.783
2008 Chu R, Shen L, Fichtenbaum N, Chen Z, Keller S, DenBaars SP, Mishra UK. Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs Ieee Electron Device Letters. 29: 303-305. DOI: 10.1109/Led.2008.917939  0.814
2008 Pei Y, Chu R, Shen L, Fichtenbaum NA, Chen Z, Brown D, Keller S, Denbaars SP, Mishra UK. Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302. DOI: 10.1109/Led.2008.917936  0.805
2008 Chu R, Shen L, Fichtenbaum N, Brown D, Keller S, Mishra UK. Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts Ieee Electron Device Letters. 29: 297-299. DOI: 10.1109/Led.2008.917814  0.763
2008 Chu R, Chen Z, DenBaars SP, Mishra UK. V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation Ieee Electron Device Letters. 29: 1184-1186. DOI: 10.1109/Led.2008.2004721  0.442
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0.818
2008 Chu R, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S, DenBaars SP, Mishra UK. V-Gate GaN HEMTs for X-Band power applications Ieee Electron Device Letters. 29: 974-976. DOI: 10.1109/Led.2008.2001639  0.822
2008 Keller S, Suh CS, Fichtenbaum NA, Furukawa M, Chu R, Chen Z, Vijayraghavan K, Rajan S, Denbaars SP, Speck JS, Mishra UK. Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104. DOI: 10.1063/1.3006132  0.762
2008 Keller S, Suh CS, Chen Z, Chu R, Rajan S, Fichtenbaum NA, Furukawa M, DenBaars SP, Speck JS, Mishra UK. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838214  0.781
2008 Pei Y, Poblenz C, Corrion AL, Chu R, Shen L, Speck JS, Mishra UK. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE Electronics Letters. 44: 598-599. DOI: 10.1049/El:20080669  0.784
2007 Pei Y, Chu R, Fichtenbaum NA, Chen Z, Brown D, Shen L, Keller S, DenBaars SP, Mishra UK. Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics, Part 2: Letters. 46: L1087-L1089. DOI: 10.1143/Jjap.46.L1087  0.822
2007 Poblenz C, Corrion AL, Recht F, Suh CS, Chu R, Shen L, Speck JS, Mishra UK. Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz Ieee Electron Device Letters. 28: 945-947. DOI: 10.1109/Led.2007.907266  0.81
2007 Chu R, Shu CS, Wong MH, Fichtenbaum N, Brown D, McCarthy L, Keller S, Feng W, Speck JS, Mishra UK. Impact of CF4 plasma treatment on GaN Ieee Electron Device Letters. 28: 781-783. DOI: 10.1109/Led.2007.902849  0.777
2005 Chu R, Zhou Y, Liu J, Wang D, Chen KJ, Lau KM. AlGaN-GaN double-channel HEMTs Ieee Transactions On Electron Devices. 52: 438-446. DOI: 10.1109/Ted.2005.844791  0.442
2005 Liu J, Zhou Y, Chu R, Cai Y, Chen KJ, Lau KM. Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs Ieee Electron Device Letters. 26: 145-147. DOI: 10.1109/Led.2005.843218  0.449
2005 Zhou YG, Wang D, Chu R, Tang CW, Qi Y, Lü Z, Chen KJ, Lau KM. Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition Journal of Electronic Materials. 34: 112-118. DOI: 10.1007/S11664-005-0187-1  0.443
2005 Zhou Y, Chu R, Liu J, Chen KJ, Lau KM. Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth Physica Status Solidi (C). 2: 2663-2667. DOI: 10.1002/Pssc.200461623  0.522
2004 Suligoj T, Liu H, Sin JKO, Tsui K, Chu R, Chen KJ, Biljanovic P, Wang KL. A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs Solid-State Electronics. 48: 2047-2050. DOI: 10.1016/J.Sse.2004.05.075  0.369
2003 Zhou Y, Chu R, Chen KJ, Lau KM. AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2003.G-9-4  0.463
2003 Chu R, Zhou YG, Chen KJ, Lau KM. Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures Physica Status Solidi (C). 2400-2403. DOI: 10.1002/Pssc.200303344  0.383
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