| Year |
Citation |
Score |
| 2013 |
Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862 |
0.701 |
|
| 2013 |
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010 |
0.736 |
|
| 2011 |
Kocan M, Recht F, Umana-Membreno GA, Kilburn MR, Nener BD, Mishra UK, Parish G. Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Solid-State Electronics. 56: 56-59. DOI: 10.1016/J.Sse.2010.10.013 |
0.681 |
|
| 2008 |
Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101 |
0.719 |
|
| 2008 |
Kocan M, Umana-Membreno GA, Kilburn MR, Fletcher IR, Recht F, McCarthy L, Mishra UK, Nener BD, Parish G. Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557. DOI: 10.1007/S11664-007-0336-9 |
0.766 |
|
| 2008 |
Cuerdo R, Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Calle F, Mishra UK. Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2994-2997. DOI: 10.1002/Pssc.200779240 |
0.71 |
|
| 2008 |
Kocan M, Umana-Membreno GA, Recht F, Baharin A, Fichtenbaum NA, McCarthy L, Keller S, Menozzi R, Mishra UK, Parish G, Nener BD. GaN vertical n-p junctions prepared by Si ion implantation Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1938-1940. DOI: 10.1002/Pssc.200778496 |
0.718 |
|
| 2007 |
Poblenz C, Corrion AL, Recht F, Suh CS, Chu R, Shen L, Speck JS, Mishra UK. Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz Ieee Electron Device Letters. 28: 945-947. DOI: 10.1109/Led.2007.907266 |
0.7 |
|
| 2007 |
Pei Y, Suh C, Chu R, Recht F, Shen L, Corrion A, Poblenz C, Speck J, Mishra UK. AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE 65th Drc Device Research Conference. 129-130. DOI: 10.1109/DRC.2007.4373683 |
0.609 |
|
| 2007 |
Recht F, McCarthy L, Shen L, Poblenz C, Corrion A, Speck JS, Mishra UK. AlGaN/ GaN HEMTs with large angle implanted nonalloyed ohmic contacts 65th Drc Device Research Conference. 37-38. DOI: 10.1109/DRC.2007.4373640 |
0.702 |
|
| 2007 |
Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts Electronics Letters. 43: 1466-1467. DOI: 10.1049/El:20072969 |
0.765 |
|
| 2007 |
Kocan M, Umana-Membreno GA, Chung JS, Recht F, McCarthy L, Keller S, Mishra UK, Parish G, Nener BD. Characterization of non-alloyed ohmic contacts to Si-implanted AlGaN/GaN heterostructures for high-electron mobility transistors Journal of Electronic Materials. 36: 1156-1159. DOI: 10.1007/S11664-007-0184-7 |
0.748 |
|
| 2006 |
Recht F, McCarthy L, Rajan S, Chakraborty A, Poblenz C, Corrion A, Speck JS, Mishra UK. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207. DOI: 10.1109/Led.2006.870419 |
0.785 |
|
| Show low-probability matches. |