Srabanti Chowdhury, Ph.D. - Publications

Affiliations: 
2010 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics

33 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Lee KJ, Nakazato Y, Chun J, Wen X, Meng C, Soman R, Noshin M, Chowdhury S. Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN. Nanotechnology. PMID 36103775 DOI: 10.1088/1361-6528/ac91d7  0.34
2021 Malakoutian M, Field DE, Hines NJ, Pasayat S, Graham S, Kuball M, Chowdhury S. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. Acs Applied Materials & Interfaces. 13: 60553-60560. PMID 34875169 DOI: 10.1021/acsami.1c13833  0.329
2018 Ji D, Li W, Chowdhury S. A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs Ieee Transactions On Electron Devices. 65: 4271-4275. DOI: 10.1109/Ted.2018.2864260  0.497
2018 Ji D, Agarwal A, Li W, Keller S, Chowdhury S. Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation Ieee Transactions On Electron Devices. 65: 483-487. DOI: 10.1109/Ted.2017.2786141  0.751
2018 Ji D, Agarwal A, Li H, Li W, Keller S, Chowdhury S. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ieee Electron Device Letters. 39: 863-865. DOI: 10.1109/Led.2018.2828844  0.781
2018 Ji D, Gupta C, Agarwal A, Chan SH, Lund C, Li W, Keller S, Mishra UK, Chowdhury S. Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714. DOI: 10.1109/Led.2018.2813312  0.74
2018 Gao J, Kaya A, Chopdekar RV, Xu Z, Takamura Y, Islam MS, Chowdhury S. A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure Journal of Materials Science: Materials in Electronics. 29: 11265-11270. DOI: 10.1007/S10854-018-9213-Y  0.319
2017 Chowdhury S. Recent achievements and pending challenges in Gallium Nitride vertical device development The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2017.N-5-01  0.418
2017 Soligo R, Sabatti F, Chowdhury S, Saraniti M. Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449. DOI: 10.1109/Ted.2017.2756085  0.446
2017 Ji D, Laurent MA, Agarwal A, Li W, Mandal S, Keller S, Chowdhury S. Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808. DOI: 10.1109/Ted.2016.2632150  0.797
2017 Gupta C, Ji D, Chan SH, Agarwal A, Leach W, Keller S, Chowdhury S, Mishra UK. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs Ieee Electron Device Letters. 38: 1559-1562. DOI: 10.1109/Led.2017.2749540  0.777
2017 Mandal S, Agarwal A, Ahmadi E, Bhat KM, Ji D, Laurent MA, Keller S, Chowdhury S. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936. DOI: 10.1109/Led.2017.2709940  0.769
2017 Li W, Ji D, Tanaka R, Mandal S, Laurent M, Chowdhury S. Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Ieee Journal of the Electron Devices Society. 5: 485-490. DOI: 10.1109/Jeds.2017.2751065  0.769
2017 Saremi M, Hathwar R, Dutta M, Koeck FAM, Nemanich RJ, Chowdhury S, Goodnick SM. Analysis of the reverse I-V characteristics of diamond-based PIN diodes Applied Physics Letters. 111: 43507. DOI: 10.1063/1.4986756  0.475
2017 Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501  0.597
2016 Ji D, Yue Y, Gao J, Chowdhury S. Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET Ieee Transactions On Electron Devices. 63: 4011-4017. DOI: 10.1109/Ted.2016.2601559  0.467
2016 Dutta M, Koeck FAM, Hathwar R, Goodnick SM, Nemanich RJ, Chowdhury S. Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V Ieee Electron Device Letters. 37: 1170-1173. DOI: 10.1109/Led.2016.2592500  0.53
2016 Hathwar R, Dutta M, Koeck FAM, Nemanich RJ, Chowdhury S, Goodnick SM. Temperature dependent simulation of diamond depleted Schottky PIN diodes Journal of Applied Physics. 119: 225703. DOI: 10.1063/1.4953385  0.479
2016 Li W, Chowdhury S. Design and fabrication of a 1.2 kV GaN‐based MOS vertical transistor for single chip normally off operation Physica Status Solidi (a). 213: 2714-2720. DOI: 10.1002/Pssa.201532575  0.506
2015 Ji D, Chowdhury S. Design of 1.2 kV Power Switches With Low RON Using GaN-Based Vertical JFET Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2446954  0.466
2015 Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922  0.679
2015 Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866  0.784
2015 Zhao S, McFavilen H, Wang S, Ponce FA, Arena C, Goodnick S, Chowdhury S. Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air Journal of Electronic Materials. 1-5. DOI: 10.1007/S11664-015-4278-3  0.315
2015 Chowdhury S. Gallium nitride based power switches for next generation of power conversion Physica Status Solidi (a) Applications and Materials Science. 212: 1066-1074. DOI: 10.1002/Pssa.201431810  0.433
2013 Chowdhury S, Mishra UK. Lateral and vertical transistors using the Algan/GAN Heterostructure Ieee Transactions On Electron Devices. 60: 3060-3066. DOI: 10.1109/Ted.2013.2277893  0.628
2013 Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014  0.784
2012 Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456  0.814
2011 Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002  0.76
2011 Keller S, Dora Y, Chowdhury S, Wu F, Chen X, Denbaars SP, Speck JS, Mishra UK. Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2086-2088. DOI: 10.1002/Pssc.201000958  0.764
2010 Gordon L, Miao MS, Chowdhury S, Higashiwaki M, Mishra UK, Walle CGVD. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions Journal of Physics D. 43: 505501. DOI: 10.1088/0022-3727/43/50/505501  0.342
2010 Higashiwaki M, Chowdhury S, Swenson BL, Mishra UK. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Applied Physics Letters. 97. DOI: 10.1063/1.3522649  0.715
2010 Higashiwaki M, Chowdhury S, Miao MS, Swenson BL, Van De Walle CG, Mishra UK. Distribution of donor states on etched surface of AlGaN/GaN heterostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3481412  0.712
2008 Chowdhury S, Swenson BL, Mishra UK. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer Ieee Electron Device Letters. 29: 543-545. DOI: 10.1109/Led.2008.922982  0.776
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