Year |
Citation |
Score |
2022 |
Lee KJ, Nakazato Y, Chun J, Wen X, Meng C, Soman R, Noshin M, Chowdhury S. Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN. Nanotechnology. PMID 36103775 DOI: 10.1088/1361-6528/ac91d7 |
0.34 |
|
2021 |
Malakoutian M, Field DE, Hines NJ, Pasayat S, Graham S, Kuball M, Chowdhury S. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. Acs Applied Materials & Interfaces. 13: 60553-60560. PMID 34875169 DOI: 10.1021/acsami.1c13833 |
0.329 |
|
2018 |
Ji D, Li W, Chowdhury S. A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs Ieee Transactions On Electron Devices. 65: 4271-4275. DOI: 10.1109/Ted.2018.2864260 |
0.497 |
|
2018 |
Ji D, Agarwal A, Li W, Keller S, Chowdhury S. Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation Ieee Transactions On Electron Devices. 65: 483-487. DOI: 10.1109/Ted.2017.2786141 |
0.751 |
|
2018 |
Ji D, Agarwal A, Li H, Li W, Keller S, Chowdhury S. 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates Ieee Electron Device Letters. 39: 863-865. DOI: 10.1109/Led.2018.2828844 |
0.781 |
|
2018 |
Ji D, Gupta C, Agarwal A, Chan SH, Lund C, Li W, Keller S, Mishra UK, Chowdhury S. Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714. DOI: 10.1109/Led.2018.2813312 |
0.74 |
|
2018 |
Gao J, Kaya A, Chopdekar RV, Xu Z, Takamura Y, Islam MS, Chowdhury S. A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure Journal of Materials Science: Materials in Electronics. 29: 11265-11270. DOI: 10.1007/S10854-018-9213-Y |
0.319 |
|
2017 |
Chowdhury S. Recent achievements and pending challenges in Gallium Nitride vertical device development The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2017.N-5-01 |
0.418 |
|
2017 |
Soligo R, Sabatti F, Chowdhury S, Saraniti M. Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations Ieee Transactions On Electron Devices. 64: 4442-4449. DOI: 10.1109/Ted.2017.2756085 |
0.446 |
|
2017 |
Ji D, Laurent MA, Agarwal A, Li W, Mandal S, Keller S, Chowdhury S. Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808. DOI: 10.1109/Ted.2016.2632150 |
0.797 |
|
2017 |
Gupta C, Ji D, Chan SH, Agarwal A, Leach W, Keller S, Chowdhury S, Mishra UK. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs Ieee Electron Device Letters. 38: 1559-1562. DOI: 10.1109/Led.2017.2749540 |
0.777 |
|
2017 |
Mandal S, Agarwal A, Ahmadi E, Bhat KM, Ji D, Laurent MA, Keller S, Chowdhury S. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936. DOI: 10.1109/Led.2017.2709940 |
0.769 |
|
2017 |
Li W, Ji D, Tanaka R, Mandal S, Laurent M, Chowdhury S. Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Ieee Journal of the Electron Devices Society. 5: 485-490. DOI: 10.1109/Jeds.2017.2751065 |
0.769 |
|
2017 |
Saremi M, Hathwar R, Dutta M, Koeck FAM, Nemanich RJ, Chowdhury S, Goodnick SM. Analysis of the reverse I-V characteristics of diamond-based PIN diodes Applied Physics Letters. 111: 43507. DOI: 10.1063/1.4986756 |
0.475 |
|
2017 |
Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501 |
0.597 |
|
2016 |
Ji D, Yue Y, Gao J, Chowdhury S. Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET Ieee Transactions On Electron Devices. 63: 4011-4017. DOI: 10.1109/Ted.2016.2601559 |
0.467 |
|
2016 |
Dutta M, Koeck FAM, Hathwar R, Goodnick SM, Nemanich RJ, Chowdhury S. Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V Ieee Electron Device Letters. 37: 1170-1173. DOI: 10.1109/Led.2016.2592500 |
0.53 |
|
2016 |
Hathwar R, Dutta M, Koeck FAM, Nemanich RJ, Chowdhury S, Goodnick SM. Temperature dependent simulation of diamond depleted Schottky PIN diodes Journal of Applied Physics. 119: 225703. DOI: 10.1063/1.4953385 |
0.479 |
|
2016 |
Li W, Chowdhury S. Design and fabrication of a 1.2 kV GaN‐based MOS vertical transistor for single chip normally off operation Physica Status Solidi (a). 213: 2714-2720. DOI: 10.1002/Pssa.201532575 |
0.506 |
|
2015 |
Ji D, Chowdhury S. Design of 1.2 kV Power Switches With Low RON Using GaN-Based Vertical JFET Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2446954 |
0.466 |
|
2015 |
Soligo R, Chowdhury S, Gupta G, Mishra U, Saraniti M. The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor Ieee Electron Device Letters. 36: 669-671. DOI: 10.1109/Led.2015.2436922 |
0.679 |
|
2015 |
Yeluri R, Lu J, Hurni CA, Browne DA, Chowdhury S, Keller S, Speck JS, Mishra UK. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Applied Physics Letters. 106. DOI: 10.1063/1.4919866 |
0.784 |
|
2015 |
Zhao S, McFavilen H, Wang S, Ponce FA, Arena C, Goodnick S, Chowdhury S. Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air Journal of Electronic Materials. 1-5. DOI: 10.1007/S11664-015-4278-3 |
0.315 |
|
2015 |
Chowdhury S. Gallium nitride based power switches for next generation of power conversion Physica Status Solidi (a) Applications and Materials Science. 212: 1066-1074. DOI: 10.1002/Pssa.201431810 |
0.433 |
|
2013 |
Chowdhury S, Mishra UK. Lateral and vertical transistors using the Algan/GAN Heterostructure Ieee Transactions On Electron Devices. 60: 3060-3066. DOI: 10.1109/Ted.2013.2277893 |
0.628 |
|
2013 |
Chowdhury S, Swenson BL, Wong MH, Mishra UK. Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074014 |
0.784 |
|
2012 |
Chowdhury S, Wong MH, Swenson BL, Mishra UK. CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion Ieee Electron Device Letters. 33: 41-43. DOI: 10.1109/Led.2011.2173456 |
0.814 |
|
2011 |
Chowdhury S, Swenson BL, Lu J, Mishra UK. Use of sub-nanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers Japanese Journal of Applied Physics. 50. DOI: 10.1143/Jjap.50.101002 |
0.76 |
|
2011 |
Keller S, Dora Y, Chowdhury S, Wu F, Chen X, Denbaars SP, Speck JS, Mishra UK. Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2086-2088. DOI: 10.1002/Pssc.201000958 |
0.764 |
|
2010 |
Gordon L, Miao MS, Chowdhury S, Higashiwaki M, Mishra UK, Walle CGVD. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions Journal of Physics D. 43: 505501. DOI: 10.1088/0022-3727/43/50/505501 |
0.342 |
|
2010 |
Higashiwaki M, Chowdhury S, Swenson BL, Mishra UK. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures Applied Physics Letters. 97. DOI: 10.1063/1.3522649 |
0.715 |
|
2010 |
Higashiwaki M, Chowdhury S, Miao MS, Swenson BL, Van De Walle CG, Mishra UK. Distribution of donor states on etched surface of AlGaN/GaN heterostructures Journal of Applied Physics. 108. DOI: 10.1063/1.3481412 |
0.712 |
|
2008 |
Chowdhury S, Swenson BL, Mishra UK. Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer Ieee Electron Device Letters. 29: 543-545. DOI: 10.1109/Led.2008.922982 |
0.776 |
|
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