| Year |
Citation |
Score |
| 2006 |
Rodwell M, Griffith Z, Parthasarathy N, Singisetti U, Paidi V, Urteaga M, Pierson R, Rowell P, Brar B. Frequency limits of bipolar integrated circuits Ieee Mtt-S International Microwave Symposium Digest. 329-332. DOI: 10.1109/MWSYM.2006.249518 |
0.766 |
|
| 2005 |
Paidi VK, Griffith Z, Wei Y, Dahlstrom M, Urteaga M, Parthasarathy N, Seo M, Samoska L, Fung A, Rodwell MJW. G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers Ieee Transactions On Microwave Theory and Techniques. 53: 598-605. DOI: 10.1109/TMTT.2004.840662 |
0.798 |
|
| 2005 |
Griffith Z, Dong Y, Scott D, Wei Y, Parthasarathy N, Dahlström M, Kadow C, Paidi V, Rodwell MJW, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen NX, et al. Transistor and circuit design for 100-200-GHz ICs Ieee Journal of Solid-State Circuits. 40: 2061-2068. DOI: 10.1109/JSSC.2005.854609 |
0.783 |
|
| 2005 |
Rodwell M, Griffith Z, Paidi V, Parthasarathy N, Sheldon C, Singisetti U, Urteaga M, Pierson R, Rowell P, Brar B. InP HBT digital ICs and MMICs in the 140-220 GHz band The Joint 30th International Conference On Infrared and Millimeter Waves and 13th International Conference On Terahertz Electronics, 2005. Irmmw-Thz 2005. 2: 620-621. |
0.76 |
|
| 2005 |
Fung AK, Samoska L, Velebir J, Siegel P, Rodwell M, Paidi V, Griffith Z, Malik R. Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz Ecs Transactions. 1: 44-49. |
0.477 |
|
| 2004 |
Xie S, Paidi V, Heikman S, Shen L, Chini A, Mishra UK, Rodwell MJW, Long SI. High linearity GaN HEMT power amplifier with pre-linearization gate diode International Journal of High Speed Electronics and Systems. 14: 847-852. DOI: 10.1109/Lechpd.2004.1549698 |
0.569 |
|
| 2004 |
Rodwell M, Griffith Z, Scott D, Wei Y, Dong Y, Paidi V, Dahlström M, Parthasarathy N, Kadow C, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen N, et al. Transistor and circuit design for 100-200 GHz ICs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 207-210. DOI: 10.1109/CSICS.2004.1392539 |
0.744 |
|
| 2004 |
Paidi V, Griffith Z, Wei Y, Dahlstrom M, Parthasarathy N, Urteaga M, Rodwell MJW, Fung A, Samoska L. Common base amplifier with 7- dB gain at 176 GHz in InP mesa DHBT technology Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 189-192. |
0.802 |
|
| 2003 |
Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682 |
0.448 |
|
| 2003 |
Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682 |
0.502 |
|
| 2003 |
Wei Y, Urteaga M, Griffith Z, Scott D, Xie S, Paidi V, Parthasarathy N, Rodwell M. 75 GHz 80 mW InP DHBT power amplifier Ieee Mtt-S International Microwave Symposium Digest. 2: 919-921. |
0.778 |
|
| 2002 |
Paidi V, Xie S, Coffie R, Mishra UK, Long S, Rodwell MJW. Simulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology Proceedings Ieee Lester Eastman Conference On High Performance Devices. 101-107. |
0.402 |
|
| 2002 |
Wei Y, Sundararajan K, Urteaga M, Griffith Z, Scott D, Paidi V, Parthasarathy N, Rodwell M. 40 GHz MMIC Power Amplifier in InP DHBT Technology Proceedings Ieee Lester Eastman Conference On High Performance Devices. 352-357. |
0.776 |
|
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