| Year |
Citation |
Score |
| 2020 |
Fathipour S, Paletti P, Fullerton-Shirey SK, Seabaugh AC. Electric-double-layer p-i-n junctions in WSe. Scientific Reports. 10: 12890. PMID 32732940 DOI: 10.1038/S41598-020-69523-9 |
0.802 |
|
| 2020 |
Asghari Heidarlou M, Paletti P, Jariwala B, Robinson JA, Fullerton-Shirey SK, Seabaugh AC. Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 67: 1839-1844. DOI: 10.1109/Ted.2020.2974450 |
0.837 |
|
| 2020 |
Chaney A, Turski H, Nomoto K, Hu Z, Encomendero J, Rouvimov S, Orlova T, Fay P, Seabaugh A, Xing HG, Jena D. Gallium nitride tunneling field-effect transistors exploiting polarization fields Applied Physics Letters. 116: 073502. DOI: 10.1063/1.5132329 |
0.526 |
|
| 2020 |
Paletti P, Fathipour S, Remškar M, Seabaugh A. Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation Journal of Applied Physics. 127: 65705. DOI: 10.1063/1.5127769 |
0.794 |
|
| 2019 |
Alessandri C, Pandey P, Abusleme A, Seabaugh A. Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors Ieee Transactions On Electron Devices. 66: 3527-3534. DOI: 10.1109/Ted.2019.2922268 |
0.585 |
|
| 2019 |
Ameen TA, Ilatikhameneh H, Fay P, Seabaugh A, Rahman R, Klimeck G. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742. DOI: 10.1109/Ted.2018.2877753 |
0.435 |
|
| 2018 |
Alessandri C, Pandey P, Abusleme A, Seabaugh A. Switching Dynamics of Ferroelectric Zr-Doped HfO2 Ieee Electron Device Letters. 39: 1780-1783. DOI: 10.1109/Led.2018.2872124 |
0.637 |
|
| 2018 |
Lu H, Paletti P, Li W, Fay P, Ytterdal T, Seabaugh A. Tunnel FET Analog Benchmarking and Circuit Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 19-25. DOI: 10.1109/Jxcdc.2018.2817541 |
0.801 |
|
| 2018 |
Kazanov DR, Poshakinskiy AV, Davydov VY, Smirnov AN, Eliseyev IA, Kirilenko DA, Remškar M, Fathipour S, Mintairov A, Seabaugh A, Gil B, Shubina TV. Multiwall MoS2 tubes as optical resonators Applied Physics Letters. 113: 101106. DOI: 10.1063/1.5047792 |
0.735 |
|
| 2017 |
Xu K, Lu H, Kinder EW, Seabaugh A, Fullerton-Shirey SK. Monolayer Solid State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors. Acs Nano. PMID 28511001 DOI: 10.1021/Acsnano.6B08505 |
0.521 |
|
| 2017 |
Alessandri C, Fathipour S, Li H, Kwak I, Kummel A, Remskar M, Seabaugh AC. Reconfigurable Electric Double Layer Doping in an MoS2Nanoribbon Transistor Ieee Transactions On Electron Devices. 64: 5217-5222. DOI: 10.1109/Ted.2017.2767501 |
0.821 |
|
| 2017 |
Li H, Xu K, Bourdon B, Lu H, Lin Y, Robinson JA, Seabaugh AC, Fullerton-Shirey SK. Electric Double Layer Dynamics in Poly(ethylene oxide) LiClO4on Graphene Transistors The Journal of Physical Chemistry C. 121: 16996-17004. DOI: 10.1021/Acs.Jpcc.7B04788 |
0.541 |
|
| 2016 |
Müller MR, Salazar R, Fathipour S, Xu H, Kallis K, Künzelmann U, Seabaugh A, Appenzeller J, Knoch J. Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11: 512. PMID 27878575 DOI: 10.1186/S11671-016-1728-7 |
0.803 |
|
| 2016 |
Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC. Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano. PMID 27305595 DOI: 10.1021/Acsnano.6B02648 |
0.778 |
|
| 2016 |
Lu H, Li W, Lu Y, Fay P, Ytterdal T, Seabaugh A. Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 20-27. DOI: 10.1109/Jxcdc.2016.2582204 |
0.553 |
|
| 2016 |
Seabaugh A, Fathipour S, Li W, Lu H, Park JH, Kummel AC, Jena D, Fullerton-Shirey SK, Fay P. Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels Technical Digest - International Electron Devices Meeting, Iedm. 2016: 35.6.1-35.6.4. DOI: 10.1109/IEDM.2015.7409835 |
0.788 |
|
| 2016 |
Fathipour S, Pandey P, Fullerton-Shirey S, Seabaugh A. Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate Journal of Applied Physics. 120: 234902. DOI: 10.1063/1.4971958 |
0.808 |
|
| 2015 |
Xu H, Fathipour S, Kinder EW, Seabaugh AC, Fullerton-Shirey SK. Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte. Acs Nano. 9: 4900-10. PMID 25877681 DOI: 10.1021/Nn506521P |
0.807 |
|
| 2015 |
Li HM, Lee D, Qu D, Liu X, Ryu J, Seabaugh A, Yoo WJ. Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide. Nature Communications. 6: 6564. PMID 25800613 DOI: 10.1038/Ncomms7564 |
0.437 |
|
| 2015 |
Jiang Z, Lu Y, Tan Y, He Y, Povolotskyi M, Kubis T, Seabaugh AC, Fay P, Klimeck G. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Ieee Transactions On Electron Devices. 62: 2445-2449. DOI: 10.1109/Ted.2015.2443564 |
0.395 |
|
| 2015 |
Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/Jxcdc.2015.2426433 |
0.463 |
|
| 2015 |
Esseni D, Ionescu AM, Seabaugh A, Yeo YC. Foreword special issue on transistors with steep subthreshold swing for low-power electronics Ieee Journal of the Electron Devices Society. 3: 86-87. DOI: 10.1109/Jeds.2015.2418911 |
0.46 |
|
| 2015 |
Fathipour S, Park JH, Kummel A, Seabaugh A. Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3 Device Research Conference - Conference Digest, Drc. 2015: 213-214. DOI: 10.1109/DRC.2015.7175641 |
0.801 |
|
| 2015 |
Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066 |
0.808 |
|
| 2015 |
Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155 |
0.403 |
|
| 2015 |
Lu H, Kwak I, Park JH, Oneill K, Furuyama T, Kobayashi N, Seabaugh A, Kummel A, Fullerton-Shirey SK. Solution-Cast Monolayers of Cobalt Crown Ether Phthalocyanine on Highly Ordered Pyrolytic Graphite Journal of Physical Chemistry C. 119: 21992-22000. DOI: 10.1021/Acs.Jpcc.5B05233 |
0.506 |
|
| 2015 |
Seabaugh A, Jiang Z, Klimeck G. Tunnel transistors Cmos and Beyond: Logic Switches For Terascale Integrated Circuits. 117-143. DOI: 10.1017/CBO9781107337886.009 |
0.407 |
|
| 2015 |
Lu H, Esseni D, Seabaugh A. Universal analytic model for tunnel FET circuit simulation Solid-State Electronics. 108: 110-117. DOI: 10.1016/J.Sse.2014.12.002 |
0.566 |
|
| 2014 |
Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Electronics based on two-dimensional materials. Nature Nanotechnology. 9: 768-79. PMID 25286272 DOI: 10.1038/Nnano.2014.207 |
0.316 |
|
| 2014 |
Hwang WS, Tahy K, Zhao P, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Kurt Gaskill D, Xing H, Seabaugh A, Jena D. Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4861379 |
0.47 |
|
| 2014 |
Lu H, Kim JW, Esseni D, Seabaugh A. Continuous semiempirical model for the current-voltage characteristics of tunnel FETs Ulis 2014 - 2014 15th International Conference On Ultimate Integration On Silicon. 25-28. DOI: 10.1109/ULIS.2014.6813897 |
0.373 |
|
| 2014 |
Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/Ted.2014.2330805 |
0.568 |
|
| 2014 |
Lu H, Seabaugh A. Tunnel field-effect transistors: State-of-the-art Ieee Journal of the Electron Devices Society. 2: 44-49. DOI: 10.1109/Jeds.2014.2326622 |
0.533 |
|
| 2014 |
Seabaugh A, Lu H. Tunnel field-effect transistors - Update Proceedings - 2014 Ieee 12th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2014. DOI: 10.1109/ICSICT.2014.7021205 |
0.328 |
|
| 2014 |
Fathipour S, Xu H, Kinder E, Fullerton-Shirey S, Seabaugh A. Investigation of aging and restoration of polyethylene-oxide cesium-perchlorate solid polymer electrolyte used for ion doping of a WSe 2 field-effect transistor Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2014.6872329 |
0.778 |
|
| 2014 |
Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527 |
0.806 |
|
| 2014 |
Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H(, Seabaugh A, Haensch W, Walle CVd, Galazka Z, Albrecht M, Fornari R, Jena D. Publisher's Note: “High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes” [Appl. Phys. Lett. 104, 203111 (2014)] Applied Physics Letters. 104: 249902. DOI: 10.1063/1.4884096 |
0.357 |
|
| 2014 |
Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800 |
0.405 |
|
| 2013 |
Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W |
0.427 |
|
| 2013 |
Seabaugh A. The tunneling transistor Ieee Spectrum. 50: 34-62. DOI: 10.1109/Mspec.2013.6607013 |
0.404 |
|
| 2013 |
Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820 |
0.752 |
|
| 2013 |
Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169 |
0.426 |
|
| 2013 |
Hwang WS, Remskar M, Yan R, Kosel T, Kyung Park J, Jin Cho B, Haensch W, Xing H, Seabaugh A, Jena D. Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4789975 |
0.404 |
|
| 2013 |
Zhang Q, Li R, Yan R, Kosel T, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Gundlach DJ, Richter CA, Nguyen NV. A unique photoemission method to measure semiconductor heterojunction band offsets Applied Physics Letters. 102. DOI: 10.1063/1.4772979 |
0.452 |
|
| 2012 |
Hwang WS, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3693593 |
0.393 |
|
| 2012 |
Karda K, Sutar S, Brockman JB, Nahas JJ, Seabaugh A. Bistable-body tunnel SRAM Ieee Transactions On Nanotechnology. 11: 1067-1072. DOI: 10.1109/Tnano.2010.2053555 |
0.694 |
|
| 2012 |
Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/Led.2012.2189546 |
0.77 |
|
| 2012 |
Lu Y, Zhou G, Li R, Liu Q, Zhang Q, Vasen T, Chae SD, Kosel T, Wistey M, Xing H, Seabaugh A, Fay P. Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657. DOI: 10.1109/Led.2012.2186554 |
0.768 |
|
| 2012 |
Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915 |
0.758 |
|
| 2012 |
Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 32.6.1-32.6.4. DOI: 10.1109/IEDM.2012.6479154 |
0.503 |
|
| 2012 |
Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955 |
0.463 |
|
| 2012 |
Sik Hwang W, Remskar M, Yan R, Protasenko V, Tahy K, Doo Chae S, Zhao P, Konar A, Xing H, Seabaugh A, Jena D. Transistors with chemically synthesized layered semiconductor WS 2 exhibiting 10 5 room temperature modulation and ambipolar behavior Applied Physics Letters. 101. DOI: 10.1063/1.4732522 |
0.408 |
|
| 2012 |
Hwang WS, Tahy K, Li X, Xing H, Seabaugh AC, Sung CY, Jena D. Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene Applied Physics Letters. 100. DOI: 10.1063/1.4716983 |
0.358 |
|
| 2012 |
Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Sio H, Kirillov OA, Richter CA, Nguyen NV. Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.3692589 |
0.455 |
|
| 2012 |
Liu Q, Dong L, Liu Y, Gordon R, Ye PD, Fay P, Seabaugh A. Frequency response of LaAlO 3/SrTiO 3 all-oxide field-effect transistors Solid-State Electronics. 76: 1-4. DOI: 10.1016/J.Sse.2012.05.044 |
0.691 |
|
| 2012 |
Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241 |
0.78 |
|
| 2011 |
Seabaugh A, Chae SD, Fay P, Hwang WS, Kosel T, Li R, Liu Q, Lu Y, Vasen T, Wistey M, Xing H, Zhou G, Zhang Q. III-V tunnel field-effect transistors Ecs Transactions. 41: 227-229. DOI: 10.1149/1.3633302 |
0.453 |
|
| 2011 |
Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232 |
0.782 |
|
| 2011 |
Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Richter CA, Nguyen NV. Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135253 |
0.46 |
|
| 2011 |
Seabaugh A. Fundamentals and current status of steep-slope tunnel field-effect transistors European Solid-State Circuits Conference. 59-60. DOI: 10.1109/ESSCIRC.2011.6044914 |
0.363 |
|
| 2011 |
Remskar M, Mrzel A, Virsek M, Godec M, Krause M, Kolitsch A, Singh A, Seabaugh A. The MoS 2 Nanotubes with Defect-Controlled Electric Properties Nanoscale Research Letters. 6: 1-6. DOI: 10.1007/S11671-010-9765-0 |
0.302 |
|
| 2010 |
Sutar S, Zhang Q, Seabaugh A. InAlAs/InGaAs interband tunnel diodes for SRAM Ieee Transactions On Electron Devices. 57: 2587-2593. DOI: 10.1109/Ted.2010.2059611 |
0.738 |
|
| 2010 |
Seabaugh AC, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic Proceedings of the Ieee. 98: 2095-2110. DOI: 10.1109/JPROC.2010.2070470 |
0.492 |
|
| 2010 |
Seabaugh A. Tunnel field-effect transistors - Status and prospects Device Research Conference - Conference Digest, Drc. 11-14. DOI: 10.1109/DRC.2010.5551883 |
0.344 |
|
| 2009 |
Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160 |
0.781 |
|
| 2009 |
Zhou G, Kabeer S, Wheeler D, Seabaugh A, Xing H. Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378147 |
0.761 |
|
| 2009 |
Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127 |
0.777 |
|
| 2009 |
Karda K, Brockman J, Sutar S, Seabaugh A, Nahas J. One-transistor bistable-body tunnel SRAM 2009 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt 2009. 233-236. DOI: 10.1109/ICICDT.2009.5166303 |
0.691 |
|
| 2009 |
Zhang Q, Sutar S, Kosel T, Seabaugh A. Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Solid-State Electronics. 53: 30-35. DOI: 10.1016/J.Sse.2008.09.010 |
0.772 |
|
| 2009 |
Wheeler D, Wernersson LE, Fröberg L, Thelander C, Mikkelsen A, Weststrate KJ, Sonnet A, Vogel EM, Seabaugh A. Deposition of HfO2 on InAs by atomic-layer deposition Microelectronic Engineering. 86: 1561-1563. DOI: 10.1016/J.Mee.2009.03.091 |
0.396 |
|
| 2008 |
Zhang Q, Fang T, Xing H, Seabaugh A, Jena D. Graphene nanoribbon tunnel transistors Ieee Electron Device Letters. 29: 1344-1346. DOI: 10.1109/Led.2008.2005650 |
0.509 |
|
| 2008 |
Zhang Q, Seabaugh A. Can the interband tunnel FET outperform Si CMOS? Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2008.4800740 |
0.352 |
|
| 2008 |
Sutar S, Zhang Q, Seabaugh A. Structural sensitivity of interband tunnel diodes for SRAM Device Research Conference - Conference Digest, Drc. 65-66. DOI: 10.1109/DRC.2008.4800736 |
0.657 |
|
| 2008 |
Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/J.Jcrysgro.2008.07.048 |
0.44 |
|
| 2007 |
Zhao J, Seabaugh AC, Kosel TH. Rapid melt growth of germanium tunnel junctions Journal of the Electrochemical Society. 154: H536-H539. DOI: 10.1149/1.2728734 |
0.732 |
|
| 2007 |
Yoon I, Yi C, Kim T, Brown AS, Seabaugh A. Effect of surface pretreatment and substrate orientation on the characteristics of InAs quantum dots on Si and Si O2 substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 945-947. DOI: 10.1116/1.2739568 |
0.312 |
|
| 2007 |
Rácz Z, Seabaugh A. Characterization and control of unconfined lateral diffusion under stencil masks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 857-861. DOI: 10.1116/1.2737437 |
0.665 |
|
| 2007 |
Zhang Q, Sutar S, Kosel T, Seabaugh A. Rapid melt growth of Ge tunnel junctions for interband tunnel transistors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422291 |
0.697 |
|
| 2006 |
Zhang Q, Zhao W, Seabaugh A. Low-subthreshold-swing tunnel transistors Ieee Electron Device Letters. 27: 297-300. DOI: 10.1109/Led.2006.871855 |
0.601 |
|
| 2006 |
Zhao W, Seabaugh A, Winstead B, Jovanovic D, Adams V. Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators Ieee Electron Device Letters. 27: 52-54. DOI: 10.1109/Led.2005.861022 |
0.348 |
|
| 2005 |
Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel TH, Seabaugh A. A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation Ieee Transactions On Nanotechnology. 4: 594-597. DOI: 10.1109/Tnano.2005.851426 |
0.788 |
|
| 2005 |
Liu Q, Seabaugh A. Design approach using tunnel diodes for lowering power in differential comparators Ieee Transactions On Circuits and Systems Ii: Express Briefs. 52: 572-575. DOI: 10.1109/Tcsii.2005.850519 |
0.711 |
|
| 2005 |
Zhao W, Seabaugh A, Adams V, Jovanovic D, Winstead B. Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain Ieee Electron Device Letters. 26: 410-412. DOI: 10.1109/Led.2004.848118 |
0.472 |
|
| 2005 |
Qin Z, Wei Z, Seabaugh A. Analytic expression and approach for low subthreshold-swing tunnel transistors Device Research Conference - Conference Digest, Drc. 2005: 161-162. DOI: 10.1109/DRC.2005.1553102 |
0.459 |
|
| 2004 |
Liu Q, Sutar S, Seabaugh A. Tunnel diode/transistor differential comparator International Journal of High Speed Electronics and Systems. 14: 640-645. DOI: 10.1142/S0129156404002600 |
0.793 |
|
| 2004 |
Racz Z, He J, Srinivasan S, Zhao W, Seabaugh A, Han K, Ruchhoeft P, Wolfe J. Nanofabrication using nanotranslated stencil masks and lift off Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 74-76. DOI: 10.1116/1.1637916 |
0.656 |
|
| 2004 |
Liu Q, Seabaugh A, Chahal P, Morris FJ. Unified AC model for the resonant tunneling diode Ieee Transactions On Electron Devices. 51: 653-657. DOI: 10.1109/Ted.2004.825795 |
0.36 |
|
| 2004 |
Zhao W, He J, Belford RE, Wernersson LE, Seabaugh A. Partially Depleted SOI MOSFETs Under Uniaxial Tensile Strain Ieee Transactions On Electron Devices. 51: 317-323. DOI: 10.1109/Ted.2003.823048 |
0.447 |
|
| 2004 |
Yan Y, Zhao J, Liu Q, Zhao W, Seabaugh A. Vertical tunnel diodes on high resistivity silicon Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2004.1367766 |
0.308 |
|
| 2004 |
Wernersson LE, Kabeer S, Zela V, Lind E, Zhang J, Seifert W, Kosel T, Seabaugh A. SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion Electronics Letters. 40: 83-85. DOI: 10.1049/El:20040048 |
0.791 |
|
| 2003 |
Wang J, Wheeler D, Yan Y, Zhao J, Howard S, Seabaugh A. Silicon tunnel diodes formed by proximity rapid thermal diffusion Ieee Electron Device Letters. 24: 93-95. DOI: 10.1109/Led.2002.807706 |
0.75 |
|
| 2003 |
Wernersson LE, Kabeer S, Zela V, Lind E, Zhao J, Yan Y, Seifert W, Seabaugh A. A combined UHV-CVD and rapid thermal diffusion process for SiGe esaki diodes by ultra shallow junction formation 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 164-165. DOI: 10.1109/ISDRS.2003.1272043 |
0.79 |
|
| 2001 |
Jackson EM, Weaver BD, Shojah-Ardalan S, Wilkins R, Seabaugh AC, Brar B. Irradiation effects in InGaAs/InAlAs high electron mobility transistors Applied Physics Letters. 79: 2279-2281. DOI: 10.1063/1.1408904 |
0.403 |
|
| 2000 |
Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581 |
0.447 |
|
| 2000 |
Weaver BD, Jackson EM, Summers GP, Seabaugh AC. Disorder effects in reduced dimension: Indium-phosphide-based resonant tunneling diodes Journal of Applied Physics. 88: 6951-6953. DOI: 10.1063/1.1324680 |
0.409 |
|
| 2000 |
Weaver BD, Jackson EM, Seabaugh AC, Van Der Wagt P. MeV ion-induced suppression of resonance current in InP-based resonant tunneling diodes Applied Physics Letters. 76: 2562-2564. DOI: 10.1063/1.126408 |
0.313 |
|
| 2000 |
Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi PH, Simons DS. Epitaxial Si-based tunnel diodes Thin Solid Films. 380: 145-150. DOI: 10.1016/S0040-6090(00)01490-5 |
0.449 |
|
| 2000 |
Seabaugh AC. Tunnel diode integrated circuits Proceedings - Ieee International Symposium On Circuits and Systems. 1: I-273. |
0.303 |
|
| 1999 |
Rommel SL, Dillon TE, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities Ieee Electron Device Letters. 20: 329-331. DOI: 10.1109/55.772366 |
0.467 |
|
| 1999 |
Wilkins R, Shojah-Ardalan S, Kirk WP, Spencer GF, Bate RT, Seabaugh AC, Lake R. Lonization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors Ieee Transactions On Nuclear Science. 46: 1702-1707. DOI: 10.1109/23.819142 |
0.338 |
|
| 1999 |
Van Paul Der Wagt J, Tang H, Broekaert TPE, Seabaugh AC, Kao YC. Multibit resonant tunneling diode SRAM Cell Based on Slew-Rate Addressing Ieee Transactions On Electron Devices. 46: 55-62. DOI: 10.1109/16.737441 |
0.345 |
|
| 1999 |
Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677 |
0.399 |
|
| 1999 |
Jackson EM, Weaver BD, Seabaugh AC, Van Der Wagt JPA, Beam EA. Proton-induced disorder in InP-based resonant tunneling diodes Applied Physics Letters. 75: 280-282. DOI: 10.1063/1.124348 |
0.324 |
|
| 1999 |
Seabaugh A, Brar B, Broekaert T, Morris F, van der Wagt P, Frazier G. Resonant-tunneling mixed-signal circuit technology Solid-State Electronics. 43: 1355-1365. DOI: 10.1016/S0038-1101(99)00074-X |
0.408 |
|
| 1998 |
Van Der Wagt JPA, Seabaugh AC, Beam EA. RTD/HFET low standby power SRAM gain cell Ieee Electron Device Letters. 19: 7-9. DOI: 10.1109/55.650335 |
0.354 |
|
| 1998 |
Broekaert TPE, Brar B, Van Der Wagt JPA, Seabaugh AC, Morris FJ, Moise TS, Beam EA, Frazier GA. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter Ieee Journal of Solid-State Circuits. 33: 1342-1348. DOI: 10.1109/4.711333 |
0.325 |
|
| 1998 |
Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419 |
0.408 |
|
| 1998 |
Tang S, Wallace RM, Seabaugh A, King-Smith D. Evaluating the minimum thickness of gate oxide on silicon using first-principles method Applied Surface Science. 135: 137-142. DOI: 10.1016/S0169-4332(98)00286-4 |
0.394 |
|
| 1997 |
Seabaugh A, Lake R, Brar B, Wallacet R, Wilk G. Beyond-The-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices Mrs Proceedings. 486. DOI: 10.1557/Proc-486-67 |
0.4 |
|
| 1997 |
Clark KP, Kirk WP, Seabaugh AC. Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor Physical Review B - Condensed Matter and Materials Physics. 55: 7068-7072. DOI: 10.1103/Physrevb.55.7068 |
0.301 |
|
| 1997 |
Wei Y, Wallace RM, Seabaugh AC. Controlled growth of SiO2 tunnel barrier and crystalline Si quantum wells for Si resonant tunneling diodes Journal of Applied Physics. 81: 6415-6424. DOI: 10.1063/1.364422 |
0.331 |
|
| 1997 |
Broekaert TPE, Brar B, van der Wagt JPA, Seabaugh AC, Moise TS, Morris FJ, Beam EA, Frazier GA. Monolithic 4 Bit 2 GSps resonant tunneling analog-to-digital converter Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). [d]187-190. DOI: 10.1016/S0920-5489(99)91944-X |
0.348 |
|
| 1996 |
Beam EA, Brar B, Broekaert TPE, Chau HF, Liu W, Seabaugh AC. Gas-source molecular beam epitaxy of electronic devices Materials Research Society Symposium - Proceedings. 421: 3-13. DOI: 10.1557/Proc-421-3 |
0.384 |
|
| 1996 |
Randall JN, Broekaert TPE, Smith BD, Beamlll EA, Seabaugh AC, Jovanovic D. Fabrication of lateral resonant tunneling devices with heterostructure barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 4038-4041. DOI: 10.1116/1.588639 |
0.403 |
|
| 1996 |
Clark KP, Kirk WP, Seabaugh AC, Kao YC. Minority carrier magneto‐oscillations in the bipolar quantum well resonant tunneling transistor Journal of Applied Physics. 79: 2732-2737. DOI: 10.1063/1.361146 |
0.423 |
|
| 1996 |
Brar B, Wilk GD, Seabaugh AC. Direct extraction of the electron tunneling effective mass in ultrathin SiO2 Applied Physics Letters. 69: 2728-2730. DOI: 10.1063/1.117692 |
0.426 |
|
| 1996 |
Broekaert TPE, Randall JN, Beam EA, Jovanovic D, Seabaugh AC, Smith BD. Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth Applied Physics Letters. 69: 1918-1920. DOI: 10.1063/1.117621 |
0.464 |
|
| 1996 |
Wei Y, Wallace RM, Seabaugh AC. Void formation on ultrathin thermal silicon oxide films on the Si(100) surface Applied Physics Letters. 69: 1270-1272. DOI: 10.1063/1.117388 |
0.314 |
|
| 1996 |
Randall J, Frazier G, Seabaugh A, Broekaert T. Potential nanoelectronic integrated circuit technologies Microelectronic Engineering. 32: 15-30. DOI: 10.1016/0167-9317(96)00002-0 |
0.343 |
|
| 1996 |
Clark KP, Kirk WP, Seabaugh AC, Kao YC. Minority carrier magneto-osculations in the bipolar quantum we resonant tunneling transistor Journal of Applied Physics. 79: 2732-2737. |
0.307 |
|
| 1995 |
Skala SL, Wu W, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D. Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 660-663. DOI: 10.1116/1.587935 |
0.346 |
|
| 1995 |
Wu W, Skala SL, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D. Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 602-606. DOI: 10.1116/1.579793 |
0.362 |
|
| 1995 |
Taylor MD, Wetsel GC, McBride SE, Brown RC, Frensley WR, Seabaugh AC, Kao Y‐, Beam EA. Nanoprobe‐induced electrostatic lateral quantization in near‐surface resonant‐tunneling heterostructures Applied Physics Letters. 66: 3621-3623. DOI: 10.1063/1.113807 |
0.307 |
|
| 1994 |
Moise TS, Kao YC, Seabaugh AC. Improved Turn-On Characteristics of a Hot Electron Transistor at 300 K Ieee Electron Device Letters. 15: 409-411. DOI: 10.1109/55.320984 |
0.39 |
|
| 1994 |
Moise TS, Kao YC, Seabaugh AC, Taddiken AH. Integration of Resonant-Tunneling Transistors and Hot-Electron Transistors Ieee Electron Device Letters. 15: 254-256. DOI: 10.1109/55.294087 |
0.431 |
|
| 1994 |
Mikkelson CH, Seabaugh AC, Beam EA, Luscombe JH, Frazier GA. Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications Ieee Transactions On Electron Devices. 41: 132-137. DOI: 10.1109/16.277388 |
0.426 |
|
| 1994 |
Moise TS, Kao YC, Seabaugh AC. Room-temperature operation of a tunneling hot-electron transfer amplifier Applied Physics Letters. 64: 1138-1140. DOI: 10.1063/1.110831 |
0.398 |
|
| 1994 |
Beam EA, Chau HF, Henderson TS, Liu W, Seabaugh AC. The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures Journal of Crystal Growth. 136: 1-10. DOI: 10.1016/0022-0248(94)90376-X |
0.455 |
|
| 1993 |
Seabaugh AC, Beam EA, Taddiken AH, Randall JN, Kao YC. Co-Integration of Resonant Tunneling and Double Heterojunction Bipolar Transistors on InP Ieee Electron Device Letters. 14: 472-474. DOI: 10.1109/55.244734 |
0.458 |
|
| 1993 |
Moise TS, Seabaugh AC, Beam EA, Randall JN. Room-Temperature Operation of a Resonant-Tunneling Hot-Electron Transistor Based Integrated Circuit Ieee Electron Device Letters. 14: 441-443. DOI: 10.1109/55.244713 |
0.435 |
|
| 1993 |
Seabaugh AC, Taddiken AH, Beam EA, Randall JN, Kao YC, Newell B. Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits Electronics Letters. 29: 1802-1803. DOI: 10.1049/El:19931199 |
0.411 |
|
| 1993 |
Seabaugh AC, Beam EA, Kao YC, Luscombe JH, Randall JN. Resonant-Tunneling Transistors Vlsi Electronics Microstructure Science. 24: 351-383. DOI: 10.1016/B978-0-12-234124-3.50016-1 |
0.423 |
|
| 1993 |
Seabaugh AC, Luscombe JH, Randall JN, Colter PC, Dip A, Eldallal GM, Bedair SM. Atomic layer epitaxy for resonant tunneling devices Thin Solid Films. 225: 99-104. DOI: 10.1016/0040-6090(93)90135-C |
0.392 |
|
| 1993 |
Seabaugh AC, Taddiken AH, Beam EA, Randall JN, Kao YC, Newell B. Co-integrated resonant tunneling and heterojunction bipolar transistor full adder Technical Digest - International Electron Devices Meeting. 419-422. |
0.317 |
|
| 1992 |
Randall JN, Seabaugh AC, Luscombe JH. Fabrication of lateral resonant tunneling devices Journal of Vacuum Science & Technology B. 10: 2941-2944. DOI: 10.1116/1.585947 |
0.452 |
|
| 1992 |
Seabaugh AC, Kao YC, Yuan HT. Nine-State Resonant Tunneling Diode Memory Ieee Electron Device Letters. 13: 479-481. DOI: 10.1109/55.192801 |
0.421 |
|
| 1992 |
Beam EA, Henderson TS, Seabaugh AC, Yang JY. The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems Journal of Crystal Growth. 116: 436-446. DOI: 10.1016/0022-0248(92)90653-Z |
0.353 |
|
| 1991 |
Beam EA, Seabaugh AC. The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices Mrs Proceedings. 240. DOI: 10.1557/PROC-240-33 |
0.311 |
|
| 1991 |
Seabaugh A, Kao YC, Randall J, Frensley W, Khatibzadeh A. Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector Japanese Journal of Applied Physics. 30: 921-925. DOI: 10.1143/Jjap.30.921 |
0.442 |
|
| 1991 |
Randall JN, Seabaugh AC, Kao Y‐, Luscombe JH, Newell BL. Electric field coupling to quantum dot diodes Journal of Vacuum Science & Technology B. 9: 2893-2897. DOI: 10.1116/1.585620 |
0.337 |
|
| 1991 |
Seabaugh AC, Kao YC, Frensley WR, Randall JN, Reed MA. Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor Applied Physics Letters. 59: 3413-3415. DOI: 10.1063/1.105692 |
0.378 |
|
| 1991 |
Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Frensley WR. Formation of rotation-induced superlattices and their observation by tunneling spectroscopy Applied Physics Letters. 59: 570-572. DOI: 10.1063/1.105389 |
0.331 |
|
| 1991 |
Seabaugh AC, Randall JN, Kao YC, Luscombe JH, Bouchard AM. In0.52Al0.48As/In0.53Ga0.47As lateral resonant tunnelling transistor Electronics Letters. 27: 1832-1834. DOI: 10.1049/El:19911139 |
0.333 |
|
| 1990 |
Seabaugh A, Kao YC, Randall J, Frensley W, Khatibzadeh A. Room temperature resonant-tunneling hot electron transistors with dc and microwave gain The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1990.B-1-1 |
0.342 |
|
| 1990 |
Reed MA, Seabaugh AC, Kao Y, Randall JN, Frensley WR, Luscombe JH. Semiconductor Resonant Tunneling Device Physics and Applications Mrs Proceedings. 198: 309. DOI: 10.1557/Proc-198-309 |
0.353 |
|
| 1990 |
Frensley WR, Reed MA, Seabaugh A. Is resonant tunneling transistor a reality? Physics Today. 43: 132. DOI: 10.1063/1.2810705 |
0.329 |
|
| 1989 |
Kao YC, Seabaugh AC, Liu HY, Kim TS, Reed MA, Saunier P, Bayraktaroglu B, Duncan WM. Improved MBE growth of InGaAs-InAlAs heterostructures for high-performance device applications Proceedings of Spie - the International Society For Optical Engineering. 1144: 30-38. DOI: 10.1117/12.961981 |
0.319 |
|
| 1989 |
Seabaugh AC, Frensley WR, Randall JN, Reed MA, Farrington DL, Matyi RJ. Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor Ieee Transactions On Electron Devices. 36: 2328-2334. DOI: 10.1109/16.40918 |
0.413 |
|
| 1989 |
Seabaugh AC, Matyi RJ, Cabaniss GE, Frensley WR. Electrochemical C-V Profiling of Heterojunction Device Structures Ieee Transactions On Electron Devices. 36: 309-313. DOI: 10.1109/16.19930 |
0.427 |
|
| 1989 |
Reed MA, Frensley WR, Matyi RJ, Randall JN, Seabaugh AC. Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor Applied Physics Letters. 54: 1034-1036. DOI: 10.1063/1.101357 |
0.38 |
|
| 1989 |
Reed MA, Frensley WR, Duncan WM, Matyi RJ, Seabaugh AC, Tsai HL. Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes Applied Physics Letters. 54: 1256-1258. DOI: 10.1063/1.101355 |
0.389 |
|
| 1988 |
Seabaugh AC, Reed MA, Frensley WR, Randall JN, Matyi RJ. Realization of pseudomorphic and superlattice bipolar resonant tunneling transistors Technical Digest - International Electron Devices Meeting. 900-902. DOI: 10.1109/IEDM.1988.32958 |
0.321 |
|
| 1980 |
Seabaugh AC, Mattauch RJ. Removal of the high-resistivity layer at the n on n+ liquid phase epitaxial GaAs layer-substrate interface by controlled in situ etch-back Journal of Applied Physics. 51: 6435-6437. DOI: 10.1063/1.327596 |
0.312 |
|
| Show low-probability matches. |
