Year |
Citation |
Score |
2020 |
Wang T, Thomas C, Diaz RE, Gronin S, Passarello D, Gardner GC, Capano MA, Manfra MJ. The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures Journal of Crystal Growth. 535: 125570. DOI: 10.1016/J.Jcrysgro.2020.125570 |
0.347 |
|
2019 |
Senichev A, Dzuba B, Nguyen T, Cao Y, Capano MA, Manfra MJ, Malis O. Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121109. DOI: 10.1063/1.5121445 |
0.379 |
|
2014 |
Capano MA, Capano BM, Morisette DT, Salleo A, Lee S, Toney MF. High-resolution x-ray analysis of graphene grown on 4H-SiC (0001̄) at low pressures Journal of Materials Research. 29: 439-446. DOI: 10.1557/Jmr.2013.306 |
0.584 |
|
2012 |
Patil A, Koybasi O, Lopez G, Foxe M, Childres I, Roecker C, Boguski J, Gu J, Bolen ML, Capano MA, Jovanovic I, Ye P, Chen YP, Bolen MA. Graphene field effect transistor as radiation sensor Ieee Nuclear Science Symposium Conference Record. 455-459. DOI: 10.1109/NSSMIC.2011.6154538 |
0.727 |
|
2012 |
Shen T, Neal AT, Bolen ML, Gu JJ, Engel LW, Capano MA, Ye PD. Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111. DOI: 10.1063/1.3675464 |
0.768 |
|
2011 |
Bolen ML, Colby R, Stach EA, Capano MA. Graphene formation on step-free 4H-SiC(0001) Journal of Applied Physics. 110. DOI: 10.1063/1.3644933 |
0.771 |
|
2011 |
Colby R, Bolen ML, Capano MA, Stach EA. Amorphous interface layer in thin graphite films grown on the carbon face of SiC Applied Physics Letters. 99. DOI: 10.1063/1.3635786 |
0.756 |
|
2010 |
Ye PD, Neal AT, Shen T, Gu JJ, Bolen ML, Capano MA. Atomic-layer-deposited high-k dielectric integration on epitaxial graphene Ecs Transactions. 33: 459-466. DOI: 10.1149/1.3481634 |
0.755 |
|
2010 |
Prakash G, Bolen ML, Colby R, Stach EA, Capano MA, Reifenberger R. Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125009 |
0.774 |
|
2010 |
Harrison SE, Capano MA, Reifenberger R. Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (000̄1) Applied Physics Letters. 96. DOI: 10.1063/1.3323092 |
0.59 |
|
2010 |
Prakash G, Capano MA, Bolen ML, Zemlyanov D, Reifenberger RG. AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC (0001̄) Carbon. 48: 2383-2393. DOI: 10.1016/J.Carbon.2010.02.026 |
0.773 |
|
2010 |
Bolen ML, Shen T, Gu JJ, Colby R, Stach EA, Ye PD, Capano MA. Empirical study of hall bars on few-layer graphene on C-face 4H-SiC Journal of Electronic Materials. 39: 2696-2701. DOI: 10.1007/S11664-010-1375-1 |
0.734 |
|
2009 |
Shen T, Wu YQ, Chernyshov A, Rokhinson LP, Bolen ML, Capano MA, Pirkle AR, Kim J, Wallace RM, Gu JJ, Xu K, Engel LW, Ye PD. SpinFET on Epitaxial Graphene The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.P-12-2 |
0.501 |
|
2009 |
Lee KY, Chen W, Capano MA. The impact of chemical-mechanical polishing on defective 4H-SiC schottky barrier diodes Materials Science Forum. 600: 827-830. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.827 |
0.384 |
|
2009 |
Kim BC, Capano MA. 3C-SiC on Si substrates using pendeo-epitaxial growth Materials Science Forum. 600: 219-222. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.219 |
0.596 |
|
2009 |
Shen T, Neal AT, Gu J, Xu M, Wu Y, Bolen M, Capano MA, Engel L, Ye PD. Pronounced quantum hall-effect on epitaxial graphene up to 70K 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378096 |
0.31 |
|
2009 |
Bolen ML, Harrison SE, Biedermann LB, Capano MA. Graphene formation mechanisms on 4H-SiC(0001) Physical Review B. 80: 115433. DOI: 10.1103/Physrevb.80.115433 |
0.75 |
|
2009 |
Biedermann LB, Bolen ML, Capano MA, Zemlyanov D, Reifenberger RG. Insights into few-layer epitaxial graphene growth on 4H-SiC (000 1̄) substrates from STM studies Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125411 |
0.783 |
|
2009 |
Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) Applied Physics Letters. 95. DOI: 10.1063/1.3254329 |
0.782 |
|
2009 |
Bolen ML, Capano MA. Defect analysis of barrier height inhomogeneity in titanium 4H-SiC schottky barrier diodes Journal of Electronic Materials. 38: 574-580. DOI: 10.1007/S11664-008-0647-5 |
0.71 |
|
2009 |
Kim BC, Coy J, Kim S, Capano MA. Heteroepitaxial 3C-SiC on Si with various carbonization process conditions Journal of Electronic Materials. 38: 581-585. DOI: 10.1007/S11664-008-0614-1 |
0.593 |
|
2008 |
Cola BA, Xu X, Fisher TS, Capano MA, Amama PB. Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices Nanoscale and Microscale Thermophysical Engineering. 12: 228-237. DOI: 10.1080/15567260802183015 |
0.402 |
|
2008 |
Shen T, Wu YQ, Capano MA, Rokhinson LP, Engel LW, Ye PD. Magnetoconductance oscillations in graphene antidot arrays Applied Physics Letters. 93. DOI: 10.1063/1.2988725 |
0.533 |
|
2008 |
Wu YQ, Ye PD, Capano MA, Xuan Y, Sui Y, Qi M, Cooper JA, Shen T, Pandey D, Prakash G, Reifenberger R. Top-gated graphene field-effect-transistors formed by decomposition of SiC Applied Physics Letters. 92. DOI: 10.1063/1.2889959 |
0.61 |
|
2008 |
Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Applied Physics Letters. 92. DOI: 10.1063/1.2828338 |
0.539 |
|
2008 |
Kim BC, Capano MA. Structural and morphological investigation of pendeo-epitaxy 3C-SiC on Si substrates Journal of Electronic Materials. 37: 681-684. DOI: 10.1007/S11664-007-0294-2 |
0.626 |
|
2007 |
Wu Y, Ye PD, Capano MA, Shen T, Xuan Y, Sui Y, Qi M, Cooper JA. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm 2/Vs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422514 |
0.345 |
|
2007 |
Lee KY, Huang CF, Chen W, Capano MA. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes Physica B: Condensed Matter. 401: 41-43. DOI: 10.1016/J.Physb.2007.08.109 |
0.502 |
|
2007 |
Lee KY, Capano MA. The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 36: 272-276. DOI: 10.1007/S11664-006-0075-3 |
0.481 |
|
2006 |
Capano MA, Smith AR, Kim BC, Kvam EP, Tsoi S, Ramdas AK, Cooper JA. Structural defects and critical electric field in 3C-SiC Materials Science Forum. 527: 431-434. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.431 |
0.606 |
|
2006 |
Capano MA, Kim BC, Smith AR, Kvam EP, Tsoi S, Ramdas AK. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy Journal of Applied Physics. 100. DOI: 10.1063/1.2357842 |
0.579 |
|
2006 |
Johnson BJ, Capano MA, Mastro MA. Energy band alignment and interface states in AlGaN/4H-SiC vertical heterojunction diodes Solid-State Electronics. 50: 1413-1419. DOI: 10.1016/J.Sse.2006.05.028 |
0.353 |
|
2006 |
Chen W, Lee Ky, Capano MA. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Journal of Crystal Growth. 297: 265-271. DOI: 10.1016/J.Jcrysgro.2006.09.033 |
0.554 |
|
2004 |
Johnson BJ, Capano MA. Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing Journal of Applied Physics. 95: 5616-5620. DOI: 10.1063/1.1707215 |
0.392 |
|
2003 |
Johnson BJ, Capano MA. The effect of titanium on Al-Ti contacts to p-type 4H-SiC Solid-State Electronics. 47: 1437-1441. DOI: 10.1016/S0038-1101(03)00097-2 |
0.372 |
|
2003 |
Capano MA, Patterson JK, Petry L, Solomon JS. Time-dependent characteristics of titanium-silicide contacts to 6H-silicon carbide Journal of Electronic Materials. 32: 458-463. |
0.317 |
|
2002 |
Li Y, Cooper JA, Capano MA. High-performance UMOSFETs in 4H-SiC Materials Science Forum. 389: 1191-1194. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1191 |
0.374 |
|
2002 |
Noh JI, Nahm KS, Kim KC, Capano MA. Effect of surface preparation on Ni ohmic contact to 3C-SiC Solid-State Electronics. 46: 2273-2279. DOI: 10.1016/S0038-1101(02)00233-2 |
0.384 |
|
2002 |
Wan J, Capano MA, Melloch MR. Formation of low resistivity ohmic contacts to n-type 3C-SiC Solid-State Electronics. 46: 1227-1230. DOI: 10.1016/S0038-1101(02)00013-8 |
0.406 |
|
2002 |
Wan J, Capano MA, Melloch MR, Cooper JA. Inversion Channel MOSFETs in 3C-SiC on Silicon Proceedings Ieee Lester Eastman Conference On High Performance Devices. 83-89. |
0.34 |
|
2001 |
Capano MA. Ion implantation for silicon carbide electronic devices Materials Research Society Symposium - Proceedings. 640: H6.1.1-H6.1.10. DOI: 10.1557/Proc-640-H6.1 |
0.367 |
|
2000 |
Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB. High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching Materials Science Forum. 338: 901-904. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.901 |
0.379 |
|
2000 |
Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC. Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide Journal of Applied Physics. 87: 8773-8777. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.703 |
0.359 |
|
1999 |
Capano MA, Ryu S, Cooper JA, Melloch MR, Rottner K, Karlsson S, Nordell N, Powell A, Walker DE. Surface roughening in ion implanted 4H-silicon carbide Journal of Electronic Materials. 28: 214-218. DOI: 10.1007/S11664-999-0016-Z |
0.365 |
|
1998 |
Sanchez EK, Heydemann VD, Rohrer GS, Skowronski M, Solomon J, Capano MA, Mitchel WC. Structural characterization of SiC crystals grown by physical vapor transport Materials Science Forum. 264: 433-436. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.433 |
0.364 |
|
1998 |
Spitz J, Melloch MR, Cooper JA, Capano MA. High-voltage (2.6 kV) lateral DMOSFETs in 4H-SiC Materials Science Forum. 264: 1005-1008. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1005 |
0.38 |
|
1998 |
Spitz J, Melloch MR, Cooper JA, Capano MA. 2.6 kV 4H-SiC lateral DMOSFET's Ieee Electron Device Letters. 19: 100-102. DOI: 10.1109/55.663527 |
0.321 |
|
1998 |
Capano MA, Ryu S, Melloch MR, Cooper JA, Buss MR. Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide Journal of Electronic Materials. 27: 370-376. DOI: 10.1007/S11664-998-0417-4 |
0.371 |
|
1997 |
Khlebnikov I, Sudarshan TS, Madangarli V, Capano MA. Technique for rapid thick film SiC epitaxial growth Materials Research Society Symposium - Proceedings. 483: 123-127. DOI: 10.1557/Proc-483-123 |
0.338 |
|
1997 |
Eyink KG, Capano MA, Walck SD, Haas TW, Streetman BG. A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy Journal of Electronic Materials. 26: 391-396. |
0.346 |
|
1995 |
Capano MA. Time-of-flight analysis of the plume dynamics of laser-ablated 6H-silicon carbide Journal of Applied Physics. 78: 4790-4792. DOI: 10.1063/1.359760 |
0.356 |
|
1992 |
Capano MA. Multiplication of dislocations in Si1-xGex layers on Si(001). Physical Review. B, Condensed Matter. 45: 11768-11774. PMID 10001191 DOI: 10.1103/Physrevb.45.11768 |
0.363 |
|
1991 |
Capano MA, Yen MY, Eyink KG, Haas TW. X-ray analysis of GaAs layers on GaAs(001) and GaAs(111)B surfaces grown at low temperatures by molecular beam epitaxy Applied Physics Letters. 58: 1854-1856. DOI: 10.1063/1.105078 |
0.34 |
|
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