Michael A. Capano - Publications

Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering

53 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Wang T, Thomas C, Diaz RE, Gronin S, Passarello D, Gardner GC, Capano MA, Manfra MJ. The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures Journal of Crystal Growth. 535: 125570. DOI: 10.1016/J.Jcrysgro.2020.125570  0.347
2019 Senichev A, Dzuba B, Nguyen T, Cao Y, Capano MA, Manfra MJ, Malis O. Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy Apl Materials. 7: 121109. DOI: 10.1063/1.5121445  0.379
2014 Capano MA, Capano BM, Morisette DT, Salleo A, Lee S, Toney MF. High-resolution x-ray analysis of graphene grown on 4H-SiC (0001̄) at low pressures Journal of Materials Research. 29: 439-446. DOI: 10.1557/Jmr.2013.306  0.584
2012 Patil A, Koybasi O, Lopez G, Foxe M, Childres I, Roecker C, Boguski J, Gu J, Bolen ML, Capano MA, Jovanovic I, Ye P, Chen YP, Bolen MA. Graphene field effect transistor as radiation sensor Ieee Nuclear Science Symposium Conference Record. 455-459. DOI: 10.1109/NSSMIC.2011.6154538  0.727
2012 Shen T, Neal AT, Bolen ML, Gu JJ, Engel LW, Capano MA, Ye PD. Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111. DOI: 10.1063/1.3675464  0.768
2011 Bolen ML, Colby R, Stach EA, Capano MA. Graphene formation on step-free 4H-SiC(0001) Journal of Applied Physics. 110. DOI: 10.1063/1.3644933  0.771
2011 Colby R, Bolen ML, Capano MA, Stach EA. Amorphous interface layer in thin graphite films grown on the carbon face of SiC Applied Physics Letters. 99. DOI: 10.1063/1.3635786  0.756
2010 Ye PD, Neal AT, Shen T, Gu JJ, Bolen ML, Capano MA. Atomic-layer-deposited high-k dielectric integration on epitaxial graphene Ecs Transactions. 33: 459-466. DOI: 10.1149/1.3481634  0.755
2010 Prakash G, Bolen ML, Colby R, Stach EA, Capano MA, Reifenberger R. Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125009  0.774
2010 Harrison SE, Capano MA, Reifenberger R. Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (000̄1) Applied Physics Letters. 96. DOI: 10.1063/1.3323092  0.59
2010 Prakash G, Capano MA, Bolen ML, Zemlyanov D, Reifenberger RG. AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC (0001̄) Carbon. 48: 2383-2393. DOI: 10.1016/J.Carbon.2010.02.026  0.773
2010 Bolen ML, Shen T, Gu JJ, Colby R, Stach EA, Ye PD, Capano MA. Empirical study of hall bars on few-layer graphene on C-face 4H-SiC Journal of Electronic Materials. 39: 2696-2701. DOI: 10.1007/S11664-010-1375-1  0.734
2009 Shen T, Wu YQ, Chernyshov A, Rokhinson LP, Bolen ML, Capano MA, Pirkle AR, Kim J, Wallace RM, Gu JJ, Xu K, Engel LW, Ye PD. SpinFET on Epitaxial Graphene The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.P-12-2  0.501
2009 Lee KY, Chen W, Capano MA. The impact of chemical-mechanical polishing on defective 4H-SiC schottky barrier diodes Materials Science Forum. 600: 827-830. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.827  0.384
2009 Kim BC, Capano MA. 3C-SiC on Si substrates using pendeo-epitaxial growth Materials Science Forum. 600: 219-222. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.219  0.596
2009 Shen T, Neal AT, Gu J, Xu M, Wu Y, Bolen M, Capano MA, Engel L, Ye PD. Pronounced quantum hall-effect on epitaxial graphene up to 70K 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378096  0.31
2009 Bolen ML, Harrison SE, Biedermann LB, Capano MA. Graphene formation mechanisms on 4H-SiC(0001) Physical Review B. 80: 115433. DOI: 10.1103/Physrevb.80.115433  0.75
2009 Biedermann LB, Bolen ML, Capano MA, Zemlyanov D, Reifenberger RG. Insights into few-layer epitaxial graphene growth on 4H-SiC (000 1̄) substrates from STM studies Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125411  0.783
2009 Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) Applied Physics Letters. 95. DOI: 10.1063/1.3254329  0.782
2009 Bolen ML, Capano MA. Defect analysis of barrier height inhomogeneity in titanium 4H-SiC schottky barrier diodes Journal of Electronic Materials. 38: 574-580. DOI: 10.1007/S11664-008-0647-5  0.71
2009 Kim BC, Coy J, Kim S, Capano MA. Heteroepitaxial 3C-SiC on Si with various carbonization process conditions Journal of Electronic Materials. 38: 581-585. DOI: 10.1007/S11664-008-0614-1  0.593
2008 Cola BA, Xu X, Fisher TS, Capano MA, Amama PB. Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices Nanoscale and Microscale Thermophysical Engineering. 12: 228-237. DOI: 10.1080/15567260802183015  0.402
2008 Shen T, Wu YQ, Capano MA, Rokhinson LP, Engel LW, Ye PD. Magnetoconductance oscillations in graphene antidot arrays Applied Physics Letters. 93. DOI: 10.1063/1.2988725  0.533
2008 Wu YQ, Ye PD, Capano MA, Xuan Y, Sui Y, Qi M, Cooper JA, Shen T, Pandey D, Prakash G, Reifenberger R. Top-gated graphene field-effect-transistors formed by decomposition of SiC Applied Physics Letters. 92. DOI: 10.1063/1.2889959  0.61
2008 Xuan Y, Wu YQ, Shen T, Qi M, Capano MA, Cooper JA, Ye PD. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics Applied Physics Letters. 92. DOI: 10.1063/1.2828338  0.539
2008 Kim BC, Capano MA. Structural and morphological investigation of pendeo-epitaxy 3C-SiC on Si substrates Journal of Electronic Materials. 37: 681-684. DOI: 10.1007/S11664-007-0294-2  0.626
2007 Wu Y, Ye PD, Capano MA, Shen T, Xuan Y, Sui Y, Qi M, Cooper JA. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm 2/Vs 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422514  0.345
2007 Lee KY, Huang CF, Chen W, Capano MA. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes Physica B: Condensed Matter. 401: 41-43. DOI: 10.1016/J.Physb.2007.08.109  0.502
2007 Lee KY, Capano MA. The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 36: 272-276. DOI: 10.1007/S11664-006-0075-3  0.481
2006 Capano MA, Smith AR, Kim BC, Kvam EP, Tsoi S, Ramdas AK, Cooper JA. Structural defects and critical electric field in 3C-SiC Materials Science Forum. 527: 431-434. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.431  0.606
2006 Capano MA, Kim BC, Smith AR, Kvam EP, Tsoi S, Ramdas AK. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy Journal of Applied Physics. 100. DOI: 10.1063/1.2357842  0.579
2006 Johnson BJ, Capano MA, Mastro MA. Energy band alignment and interface states in AlGaN/4H-SiC vertical heterojunction diodes Solid-State Electronics. 50: 1413-1419. DOI: 10.1016/J.Sse.2006.05.028  0.353
2006 Chen W, Lee Ky, Capano MA. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Journal of Crystal Growth. 297: 265-271. DOI: 10.1016/J.Jcrysgro.2006.09.033  0.554
2004 Johnson BJ, Capano MA. Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing Journal of Applied Physics. 95: 5616-5620. DOI: 10.1063/1.1707215  0.392
2003 Johnson BJ, Capano MA. The effect of titanium on Al-Ti contacts to p-type 4H-SiC Solid-State Electronics. 47: 1437-1441. DOI: 10.1016/S0038-1101(03)00097-2  0.372
2003 Capano MA, Patterson JK, Petry L, Solomon JS. Time-dependent characteristics of titanium-silicide contacts to 6H-silicon carbide Journal of Electronic Materials. 32: 458-463.  0.317
2002 Li Y, Cooper JA, Capano MA. High-performance UMOSFETs in 4H-SiC Materials Science Forum. 389: 1191-1194. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1191  0.374
2002 Noh JI, Nahm KS, Kim KC, Capano MA. Effect of surface preparation on Ni ohmic contact to 3C-SiC Solid-State Electronics. 46: 2273-2279. DOI: 10.1016/S0038-1101(02)00233-2  0.384
2002 Wan J, Capano MA, Melloch MR. Formation of low resistivity ohmic contacts to n-type 3C-SiC Solid-State Electronics. 46: 1227-1230. DOI: 10.1016/S0038-1101(02)00013-8  0.406
2002 Wan J, Capano MA, Melloch MR, Cooper JA. Inversion Channel MOSFETs in 3C-SiC on Silicon Proceedings Ieee Lester Eastman Conference On High Performance Devices. 83-89.  0.34
2001 Capano MA. Ion implantation for silicon carbide electronic devices Materials Research Society Symposium - Proceedings. 640: H6.1.1-H6.1.10. DOI: 10.1557/Proc-640-H6.1  0.367
2000 Saddow SE, Williams J, Isaacs-Smith T, Capano MA, Cooper JA, Mazzola MS, Hsieh AJ, Casady JB. High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching Materials Science Forum. 338: 901-904. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.901  0.379
2000 Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC. Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide Journal of Applied Physics. 87: 8773-8777. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.703  0.359
1999 Capano MA, Ryu S, Cooper JA, Melloch MR, Rottner K, Karlsson S, Nordell N, Powell A, Walker DE. Surface roughening in ion implanted 4H-silicon carbide Journal of Electronic Materials. 28: 214-218. DOI: 10.1007/S11664-999-0016-Z  0.365
1998 Sanchez EK, Heydemann VD, Rohrer GS, Skowronski M, Solomon J, Capano MA, Mitchel WC. Structural characterization of SiC crystals grown by physical vapor transport Materials Science Forum. 264: 433-436. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.433  0.364
1998 Spitz J, Melloch MR, Cooper JA, Capano MA. High-voltage (2.6 kV) lateral DMOSFETs in 4H-SiC Materials Science Forum. 264: 1005-1008. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1005  0.38
1998 Spitz J, Melloch MR, Cooper JA, Capano MA. 2.6 kV 4H-SiC lateral DMOSFET's Ieee Electron Device Letters. 19: 100-102. DOI: 10.1109/55.663527  0.321
1998 Capano MA, Ryu S, Melloch MR, Cooper JA, Buss MR. Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide Journal of Electronic Materials. 27: 370-376. DOI: 10.1007/S11664-998-0417-4  0.371
1997 Khlebnikov I, Sudarshan TS, Madangarli V, Capano MA. Technique for rapid thick film SiC epitaxial growth Materials Research Society Symposium - Proceedings. 483: 123-127. DOI: 10.1557/Proc-483-123  0.338
1997 Eyink KG, Capano MA, Walck SD, Haas TW, Streetman BG. A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy Journal of Electronic Materials. 26: 391-396.  0.346
1995 Capano MA. Time-of-flight analysis of the plume dynamics of laser-ablated 6H-silicon carbide Journal of Applied Physics. 78: 4790-4792. DOI: 10.1063/1.359760  0.356
1992 Capano MA. Multiplication of dislocations in Si1-xGex layers on Si(001). Physical Review. B, Condensed Matter. 45: 11768-11774. PMID 10001191 DOI: 10.1103/Physrevb.45.11768  0.363
1991 Capano MA, Yen MY, Eyink KG, Haas TW. X-ray analysis of GaAs layers on GaAs(001) and GaAs(111)B surfaces grown at low temperatures by molecular beam epitaxy Applied Physics Letters. 58: 1854-1856. DOI: 10.1063/1.105078  0.34
Show low-probability matches.