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Ik J. Chang, Ph.D. - Publications

Affiliations: 
2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Siddiqui MSM, Ruchi S, Le LV, Yoo T, Chang I, Kim TT. SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction Ieee Transactions On Device and Materials Reliability. 20: 468-474. DOI: 10.1109/Tdmr.2020.2994769  0.383
2019 Ro D, Min C, Kang M, Chang IJ, Lee HM. A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems. Sensors (Basel, Switzerland). 20. PMID 31892184 DOI: 10.3390/S20010171  0.307
2019 Kim M, Chang I, Lee H. Segmented Tag Cache: A Novel Cache Organization for Reducing Dynamic Read Energy Ieee Transactions On Computers. 68: 1546-1552. DOI: 10.1109/Tc.2019.2906872  0.317
2018 Seo D, Trang LD, Han J, Kim J, Lee S, Chang I. Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI Technology Ieee Electron Device Letters. 39: 1728-1731. DOI: 10.1109/Led.2018.2872345  0.33
2018 Kim H, Chang IJ, Lee H. Optimal Selection of SRAM Bit-Cell Size for Power Reduction in Video Compression Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 8: 431-443. DOI: 10.1109/Jetcas.2018.2828129  0.451
2017 Dang LDT, Kim JS, Chang IJ. We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation Tolerance Ieee Transactions On Nuclear Science. 64: 2489-2496. DOI: 10.1109/Tns.2017.2728180  0.48
2017 Chang IJ, Park SY, Choi JW. Design of Low-Power Voltage Scalable Arithmetic Units with Perfect Timing Error Cancelation Circuits Systems and Signal Processing. 36: 4309-4325. DOI: 10.1007/S00034-017-0534-5  0.42
2016 Lee T, Chang IJ, Lee C, Yang JS. Physical-Aware approaches for speeding up scan shift operations in SoCs Etri Journal. 38: 479-486. DOI: 10.4218/Etrij.16.0115.0779  0.328
2016 Chang IJ, Yang JS. Subthreshold 8t sram sizing utilizing short-channel vt roll-off and inverse narrow-width effect Ieice Electronics Express. 13. DOI: 10.1587/Elex.13.20160020  0.432
2016 Trang Dang LD, Kang M, Kim J, Chang IJ. Studying the Variation Effects of Radiation Hardened Quatro SRAM Bit-Cell Ieee Transactions On Nuclear Science. 63: 2399-2401. DOI: 10.1109/Tns.2016.2590426  0.452
2016 Choi M, Chang IJ, Kim JS. Optimal reference view selection algorithm for low complexity disparity estimation Ieee Transactions On Consumer Electronics. 62: 45-52. DOI: 10.1109/Tce.2016.7448562  0.33
2016 Jeon J, Chang IJ, Kang M. Accurate Estimation Technique of Low-Frequency Noise in NAND Flash Cell Array Ieee Electron Device Letters. 37: 724-727. DOI: 10.1109/Led.2016.2553174  0.367
2016 Kang M, Yang JS, Chang IJ. Studying trapped tunneling-electron migration due to program and erase cycles in NAND flash Ieee Electron Device Letters. 37: 284-286. DOI: 10.1109/Led.2016.2527919  0.327
2016 Do AT, Lee ZC, Wang B, Chang IJ, Liu X, Kim TTH. 0.2 V 8T SRAM with PVT-Aware Bitline Sensing and Column-Based Data Randomization Ieee Journal of Solid-State Circuits. DOI: 10.1109/Jssc.2016.2540799  0.469
2015 Galib MH, Chang IJ, Kim J. Supply Voltage Decision Methodology to Minimize SRAM Standby Power Under Radiation Environment Ieee Transactions On Nuclear Science. 62: 1349-1356. DOI: 10.1109/Tns.2015.2420094  0.397
2013 Choi M, Chang IJ, Kim J. High Performance and Hardware Efficient Multiview Video Coding Frame Scheduling Algorithms and Architectures Ieee Transactions On Circuits and Systems For Video Technology. 23: 1312-1321. DOI: 10.1109/Tcsvt.2013.2242552  0.361
2013 Phan ND, Chang IJ, Lee J. A 2-Kb One-Time Programmable Memory for UHF Passive RFID Tag IC in a Standard 0.18 $\mu$m CMOS Process Ieee Transactions On Circuits and Systems I: Regular Papers. 60: 1810-1822. DOI: 10.1109/Tcsi.2012.2230500  0.421
2013 Nguyen TN, Chang I, Lee J. A K‐band current‐reuse differential armstrong voltage‐controlled oscillator in 90 nm CMOS technology Microwave and Optical Technology Letters. 55: 112-115. DOI: 10.1002/Mop.27238  0.38
2012 Kwon J, Chang IJ, Lee I, Park H, Park J. Heterogeneous SRAM Cell Sizing for Low-Power H.264 Applications Ieee Transactions On Circuits and Systems I: Regular Papers. 59: 2275-2284. DOI: 10.1109/Tcsi.2012.2185335  0.598
2012 Kang M, Park IH, Chang IJ, Lee K, Seo S, Park B, Shin H. An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies Ieee Electron Device Letters. 33: 1114-1116. DOI: 10.1109/Led.2012.2201442  0.362
2011 Chang IJ, Kim J, Kim K, Roy K. Robust Level Converter for Sub-Threshold/Super-Threshold Operation:100 mV to 2.5 V Ieee Transactions On Very Large Scale Integration Systems. 19: 1429-1437. DOI: 10.1109/Tvlsi.2010.2051240  0.613
2011 Chang IJ, Mohapatra D, Roy K. A Priority-Based 6T/8T Hybrid SRAM Architecture for Aggressive Voltage Scaling in Video Applications Ieee Transactions On Circuits and Systems For Video Technology. 21: 101-112. DOI: 10.1109/Tcsvt.2011.2105550  0.633
2010 Chang IJ, Park SP, Roy K. Exploring Asynchronous Design Techniques for Process-Tolerant and Energy-Efficient Subthreshold Operation Ieee Journal of Solid-State Circuits. 45: 401-410. DOI: 10.1109/Jssc.2009.2036764  0.497
2010 Chang I, Park J, Kang K, Roy K. Fast and accurate estimation of SRAM read and hold failure probability using critical point sampling Iet Circuits, Devices & Systems. 4: 469. DOI: 10.1049/Iet-Cds.2010.0137  0.568
2009 Chang IJ, Kim J, Park SP, Roy K. A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS Ieee Journal of Solid-State Circuits. 44: 650-658. DOI: 10.1109/Jssc.2008.2011972  0.657
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