Year |
Citation |
Score |
2018 |
Cheng C, Huang C, Lee K, Zhao F. A Novel Deep Junction Edge Termination for Superjunction MOSFETs Ieee Electron Device Letters. 39: 544-547. DOI: 10.1109/Led.2018.2803199 |
0.324 |
|
2017 |
Lee K, Liu Y, Wang S, Chan L. Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS Ieee Transactions On Electron Devices. 64: 1394-1398. DOI: 10.1109/Ted.2017.2653844 |
0.312 |
|
2015 |
Huang CF, Hsu HC, Chu KW, Lee LH, Tsai MJ, Lee KY, Zhao F. Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge Ieee Transactions On Electron Devices. 62: 354-358. DOI: 10.1109/Ted.2014.2361535 |
0.305 |
|
2012 |
Lee K, Huang Y. An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps Ieee Transactions On Electron Devices. 59: 694-699. DOI: 10.1109/Ted.2011.2181391 |
0.339 |
|
2012 |
Lee W, Chu K, Huang C, Lee L, Tsai M, Lee K, Zhao F. Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate Ieee Transactions On Electron Devices. 59: 754-760. DOI: 10.1109/Ted.2011.2178028 |
0.339 |
|
2009 |
Huang C, Kan C, Wu T, Lee M, Liu Y, Lee K, Zhao F. 3510-V 390- $\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate Ieee Electron Device Letters. 30: 957-959. DOI: 10.1109/Led.2009.2027722 |
0.351 |
|
2007 |
Lee KY, Huang CF, Chen W, Capano MA. The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes Physica B: Condensed Matter. 401: 41-43. DOI: 10.1016/J.Physb.2007.08.109 |
0.577 |
|
2007 |
Lee KY, Capano MA. The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes Journal of Electronic Materials. 36: 272-276. DOI: 10.1007/S11664-006-0075-3 |
0.579 |
|
2006 |
Chen W, Lee Ky, Capano MA. Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers Journal of Crystal Growth. 297: 265-271. DOI: 10.1016/J.Jcrysgro.2006.09.033 |
0.577 |
|
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