Michael L. Bolen, Ph.D. - Publications

2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Materials Science Engineering, Electronics and Electrical Engineering, Nanotechnology

13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Patil A, Koybasi O, Lopez G, Foxe M, Childres I, Roecker C, Boguski J, Gu J, Bolen ML, Capano MA, Jovanovic I, Ye P, Chen YP, Bolen MA. Graphene field effect transistor as radiation sensor Ieee Nuclear Science Symposium Conference Record. 455-459. DOI: 10.1109/NSSMIC.2011.6154538  0.662
2012 Shen T, Neal AT, Bolen ML, Gu JJ, Engel LW, Capano MA, Ye PD. Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001) Journal of Applied Physics. 111. DOI: 10.1063/1.3675464  0.718
2012 Ye PD, Capano M, Shen T, Wu Y, Bolen ML. Magneto-transport on epitaxial graphene Nanoscience and Technology. 57: 161-188. DOI: 10.1007/978-3-642-22984-8__6  0.448
2011 Bolen ML, Colby R, Stach EA, Capano MA. Graphene formation on step-free 4H-SiC(0001) Journal of Applied Physics. 110. DOI: 10.1063/1.3644933  0.728
2011 Colby R, Bolen ML, Capano MA, Stach EA. Amorphous interface layer in thin graphite films grown on the carbon face of SiC Applied Physics Letters. 99. DOI: 10.1063/1.3635786  0.68
2010 Ye PD, Neal AT, Shen T, Gu JJ, Bolen ML, Capano MA. Atomic-layer-deposited high-k dielectric integration on epitaxial graphene Ecs Transactions. 33: 459-466. DOI: 10.1149/1.3481634  0.714
2010 Prakash G, Bolen ML, Colby R, Stach EA, Capano MA, Reifenberger R. Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125009  0.733
2010 Prakash G, Capano MA, Bolen ML, Zemlyanov D, Reifenberger RG. AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC (0001̄) Carbon. 48: 2383-2393. DOI: 10.1016/J.Carbon.2010.02.026  0.724
2010 Bolen ML, Shen T, Gu JJ, Colby R, Stach EA, Ye PD, Capano MA. Empirical study of hall bars on few-layer graphene on C-face 4H-SiC Journal of Electronic Materials. 39: 2696-2701. DOI: 10.1007/S11664-010-1375-1  0.673
2009 Bolen ML, Harrison SE, Biedermann LB, Capano MA. Graphene formation mechanisms on 4H-SiC(0001) Physical Review B. 80: 115433. DOI: 10.1103/Physrevb.80.115433  0.704
2009 Biedermann LB, Bolen ML, Capano MA, Zemlyanov D, Reifenberger RG. Insights into few-layer epitaxial graphene growth on 4H-SiC (000 1̄) substrates from STM studies Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125411  0.735
2009 Shen T, Gu JJ, Xu M, Wu YQ, Bolen ML, Capano MA, Engel LW, Ye PD. Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) Applied Physics Letters. 95. DOI: 10.1063/1.3254329  0.742
2009 Bolen ML, Capano MA. Defect analysis of barrier height inhomogeneity in titanium 4H-SiC schottky barrier diodes Journal of Electronic Materials. 38: 574-580. DOI: 10.1007/S11664-008-0647-5  0.61
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