Dennis G. Deppe - Publications

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

254 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Li M, Yang X, Zhang Y, Zhao G, Beadsworth J, Eifert L, Tucker F, Deppe DG. 901 nm Lithographic vertical-cavity surfaceemitting laser with stable single-lobed beam pattern Electronics Letters. 51: 1683-1684. DOI: 10.1049/El.2015.3003  1
2014 Mathew R, Gamouras A, Dilcher E, Ramachandran AP, Yang HYS, Freisem S, Deppe DG, Hall KC. Applications of femtosecond pulse engineering in the control of excitons in quantum dots Proceedings of Spie - the International Society For Optical Engineering. 9167. DOI: 10.1117/12.2064789  1
2014 Mathew R, Dilcher E, Gamouras A, Ramachandran A, Yang HYS, Freisem S, Deppe D, Hall KC. Subpicosecond adiabatic rapid passage on a single semiconductor quantum dot: Phonon-mediated dephasing in the strong-driving regime Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.035316  1
2014 Yang X, Li MX, Zhao G, Freisem S, Deppe DG. Small oxide-free vertical-cavity surface-emitting lasers with high efficiency and high power Electronics Letters. 50: 1864-1866. DOI: 10.1049/El.2014.3352  1
2014 Yang X, Li M, Zhao G, Zhang Y, Freisem S, Deppe DG. Oxide-free vertical-cavity surface-emitting lasers with low junction temperature and high drive level Electronics Letters. 50: 1474-1475. DOI: 10.1049/El.2014.2626  1
2014 Mathew R, Dilcher E, Gamouras A, Ramachandran AP, Freisem S, Deppe DG, Hall KC. Subpicosecond adiabatic rapid passage in a single InGaAs quantum dot: Role of phonons in dephasing Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  1
2014 Mathew R, Dilcher E, Gamouras A, Ramachandran AP, Freisem S, Deppe DG, Hall KC. Subpicosecond adiabatic rapid passage in a single InGaAs quantum dot: Role of phonons in dephasing Optics Infobase Conference Papers 1
2013 Gamouras A, Mathew R, Freisem S, Deppe DG, Hall KC. Simultaneous deterministic control of distant qubits in two semiconductor quantum dots. Nano Letters. 13: 4666-70. PMID 24001027 DOI: 10.1021/Nl4018176  1
2013 Dallesasse JM, Deppe DG. III-V oxidation: Discoveries and applications in vertical-cavity surface-emitting lasers Proceedings of the Ieee. 101: 2234-2242. DOI: 10.1109/JPROC.2013.2274931  1
2013 Liu X, Zhao G, Zhang Y, Deppe DG. Semiconductor laser monolithically pumped with a light emitting diode operating in the thermoelectrophotonic regime Applied Physics Letters. 102. DOI: 10.1063/1.4793656  1
2013 Zhao G, Yang X, Zhang Y, Li M, Deppe DG, Cao C, Thorp J, Thiagarajan P, McElhinnery M. Record low thermal resistance of mode-confined VCSELs using AlAs/AlGaAs DBRs Cleo: Science and Innovations, Cleo_si 2013. CF2F.7.  1
2013 Liu X, Zhang Y, Zhao G, Deppe DG. Possibility for breaking the unity efficiency barrier: Semiconductor laser optically pumped by an integrated light emitting diode Cleo: Science and Innovations, Cleo_si 2013. CTh1G.8.  1
2013 Deppe DG, Li M, Yang X. Metal cavities as the efficiency killer in nanolasers and spontaneous light sources Cleo: Science and Innovations, Cleo_si 2013. CM3F.3.  1
2012 Deppe DG. Quantum dots for high powers and efficiencies 2012 Ieee Photonics Society Summer Topical Meeting Series, Psst 2012. 49-50. DOI: 10.1109/PHOSST.2012.6280780  1
2012 Deppe DG, Liu X, Zhao G, Zhang Y. Semiconductor laser integrated with a thermoelectrophotonic light emitting diode heat pump 2012 Ieee Photonics Conference, Ipc 2012. 852-853. DOI: 10.1109/IPCon.2012.6359262  1
2012 Deppe DG, Li M, Yang X. Metal quenching of radiative emission in metal-clad nanolasers 2012 Ieee Photonics Conference, Ipc 2012. 614-615. DOI: 10.1109/IPCon.2012.6358771  1
2012 Zhao G, Zhang Y, Deppe DG, Kronthasinghe K, Muller A. Buried heterostructure VCSEL with semiconductor mirrors 2012 Ieee Photonics Conference, Ipc 2012. 250-251. DOI: 10.1109/IPCon.2012.6358586  1
2012 Liu X, Zhao G, Zhang Y, Deppe DG. Optoelectronic chip based on a laser integrated with a thermoelectrophotonic heat pump Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340117  1
2012 Zhao G, Zhang Y, Deppe DG, Konthasinghe K, Muller A. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors Applied Physics Letters. 101. DOI: 10.1063/1.4750062  1
2011 Zhao G, Demir A, Freisem S, Zhang Y, Liu X, Deppe DG. New VCSEL technology with scalability for single mode operation and densely integrated arrays Proceedings of Spie - the International Society For Optical Engineering. 8054. DOI: 10.1117/12.887953  1
2011 Demir A, Zhao G, Freisem S, Liu X, Deppe DG. Scaling properties of lithographic VCSELs Proceedings of Spie - the International Society For Optical Engineering. 7952. DOI: 10.1117/12.875579  1
2011 Zhao G, Deppe DG. Thermal performance of oxide-free lithographic VCSELs Ieee Photonic Society 24th Annual Meeting, Pho 2011. 915-916. DOI: 10.1109/PHO.2011.6110857  1
2011 Hageman W, Cho JH, Bass M, Deppe DG, Hawkins T, Foy P, Ballato J. Novel visible light emitting optical fibers using up-conversion Ieee/Osa Journal of Display Technology. 7: 295-300. DOI: 10.1109/Jdt.2011.2111412  1
2011 Cho JH, Bass M, Cassanho A, Jenssen HP, Freisem S, Deppe DG. Properties of up conversion phosphors necessary for small size emissive displays Ieee/Osa Journal of Display Technology. 7: 77-83. DOI: 10.1109/Jdt.2010.2095410  1
2011 Bass M, Ballato J, Hageman W, Cho JH, Deppe DG, Hawkins T, Foy P. Visible light emitting optical fibers using up-conversion Optics Infobase Conference Papers 1
2010 Muller A, Flagg EB, Deppe DG, Salamo GJ, Shih CK. Coherently controlled quantum emitters in cavities Proceedings of Spie - the International Society For Optical Engineering. 7611. DOI: 10.1117/12.847066  1
2010 Demir A, Zhao G, Deppe DG. Lithographic lasers with low thermal resistance Electronics Letters. 46: 1147-1149. DOI: 10.1049/El.2010.8532  1
2010 Demir A, Zhao G, Ozgur G, Freisem S, Deppe DG. Lithographic and oxide-free vertical cavity surface emitting laser Optics Infobase Conference Papers 1
2009 Ozgur G, Demir A, Deppe DG. Transparency current influence on the temperature dependent threshold of undoped and P-doped QD laser diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 737-738. DOI: 10.1109/LEOS.2009.5343358  1
2009 Ozgur G, Demir A, Deppe DG. Threshold temperature dependence of a quantum-dot laser diode with and without p-doping Ieee Journal of Quantum Electronics. 45: 1265-1272. DOI: 10.1109/Jqe.2009.2025660  1
2009 Deppe DG, Shavritranuruk K, Ozgur G, Chen H, Freisem S. Quantum dot laser diode with low threshold and low internal loss Electronics Letters. 45: 54-56. DOI: 10.1049/El:20092873  1
2009 Flagg EB, Muller A, Robertson JW, Founta S, Deppe DG, Xiao M, Ma W, Salamo GJ, Shih CK. Resonantly driven coherent oscillations in a solid-state quantum emitter Nature Physics. 5: 203-207. DOI: 10.1038/Nphys1184  1
2009 Demir A, Ozgur G, Shavitranuruk K, Freisem S, Deppe DG. Threshold and temperature dependence of quantum dot laser diodes approaching ideal performance Optics Infobase Conference Papers 1
2008 Flagg EB, Muller A, Robertson JW, Tran T, Deppe DG, Zhang J, Wenquan M, Salamo G, Shih CK. Photon-photon correlations from a resonantly driven quantum dot in a microcavity Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2008.4552468  1
2008 Shavitranuruk K, Kim J, Freisem S, Ozgur G, Chen H, Deppe DG, Ardey A, Delfyett P. Large cavity single layer quantum dot laser diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 533-534. DOI: 10.1109/LEOS.2008.4688727  1
2008 Luo Y, Deppe DG, Jagadish C. Guest editorial on nano-optoelectronics and applications Journal of Lightwave Technology. 26: 1365-1366. DOI: 10.1109/Jlt.2008.923651  1
2008 Deppe DG, Freisem S, Ozgur G, Shavritranuruk K, Chen H. Very low threshold current density continuous-wave quantum dot laser diode Conference Digest - Ieee International Semiconductor Laser Conference. 33-34. DOI: 10.1109/ISLC.2008.4635995  1
2008 Deppe DG, Freisem S, Chen H, Shavritnaruk K, Demir A, Ozgur G. Physics of quantum dot lasers: Threshold temperature dependence, internal loss effects, and threshold current density 2008 Int. Nano-Optoelectronics Workshop, Inow 2008 in Cooperation With Int. Global-Coe Summer School (Photonics Integration-Core Electronics: Pice) and 31st Int. Symposium On Optical Communications. 64-65. DOI: 10.1109/INOW.2008.4634445  1
2008 Freisem S, Ozgur G, Shavritranuruk K, Chen H, Deppe DG. Very-low-threshold current density continuous-wave quantum-dot laser diode Electronics Letters. 44: 679-681. DOI: 10.1049/El:20080656  1
2007 Yang T, Mock A, O'Brien JD, Lipson S, Deppe DG. Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength. Optics Express. 15: 7281-9. PMID 19547051 DOI: 10.1364/Oe.15.007281  1
2007 Muller A, Flagg EB, Bianucci P, Wang XY, Deppe DG, Ma W, Zhang J, Salamo GJ, Xiao M, Shih CK. Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity. Physical Review Letters. 99: 187402. PMID 17995437 DOI: 10.1103/Physrevlett.99.187402  1
2007 Yang T, Mock A, O'Brien JD, Lipson S, Deppe DG. Edge-emitting photonic crystal double-heterostructure nanocavity lasers with InAs quantum dot active material. Optics Letters. 32: 1153-5. PMID 17410266 DOI: 10.1364/Ol.32.001153  1
2007 Muller A, Flagg EB, Wang XY, Shih CK, Deppe DG, Ma W, Zhang J, Salamo GJ, Xiao M. Resonance fluorescence from a semiconductor quantum dot Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. DOI: 10.1109/QELS.2007.4431637  1
2007 Deppe DG, Freisem S, Chen H, Ozgur G, Demir A, Muller A, Shin CK. Nanophotonic lasers and spontaneous light sources: Scaling trends for speed, efficiency, and quantum light generation using single quantum dots 2007 International Nano-Optelectronics Workshop, Inow. 3. DOI: 10.1109/INOW.2007.4302837  1
2007 Robb JL, Chen Y, Timmons A, Hall KC, Shchekin OB, Deppe DG. Time-resolved Faraday rotation measurements of spin relaxation in InGaAs/GaAs quantum dots: Role of excess energy Applied Physics Letters. 90. DOI: 10.1063/1.2721380  1
2007 Hall KC, Koerperick EJ, Boggess TF, Shchekin OB, Deppe DG. Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states Applied Physics Letters. 90. DOI: 10.1063/1.2437063  1
2006 Muller A, Lu D, Ahn J, Gazula D, Quadery S, Freisem S, Deppe DG, Shih CK. Self-aligned all-epitaxial microcavity for cavity QED with quantum dots. Nano Letters. 6: 2920-4. PMID 17163731 DOI: 10.1021/Nl0622909  1
2006 Muller A, Shih CK, Ahn J, Lu D, Deppe DG. Isolated single quantum dot emitters in all-epitaxial microcavities. Optics Letters. 31: 528-30. PMID 16496909 DOI: 10.1364/Ol.31.000528  1
2006 Deppe DG, Huang H. Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers Ieee Journal of Quantum Electronics. 42: 324-330. DOI: 10.1109/Jqe.2005.859913  1
2006 Muller A, Shin CK, Lu D, Ahn J, Gazula D, Quadery S, Freisem S, Deppe DG. Buried all-epitaxial microcavity for cavity-QED with quantum dots Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4629161  1
2006 Hendrickson J, Richards BC, Sweet J, Christenson C, Pajor M, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic crystal nanocavities: Transition from weak to strong coupling and nonlinear emissions Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4629159  1
2006 Yang T, Lipson S, O'Brien JD, Deppe DG. Photonic crystal double-heterostructure nanocavity InAs quantum dot laser with waveguide output coupling Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628031  1
2006 Muller A, Shih CK, Ahn J, Lu D, Gazula D, Deppe DG. High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2158519  1
2006 O'Brien J, Shih MH, Yang T, Bagheri M, Marshall WK, Dapkus PD, Deppe DG. Photonic crystal devices 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 2: 727-730.  1
2006 Yang T, O'Brien JD, Lipson S, Deppe DG. Photonic crystal lasers with quantum dots active regions and their temperature dependence Optics Infobase Conference Papers 1
2006 Yang T, Lipson S, Mock A, O'Brien JD, Deppe DG. Lasing behavior of InAs quantum dot micro-cavities as a function of wavelength and temperature Optics Infobase Conference Papers 1
2006 Ahn J, Freisem S, Lu D, Gazula D, Deppe DG. Fabrication of All-Epitaxial semiconductor laser using selective interface Fermi-Level pinning Optics Infobase Conference Papers 1
2006 Yang T, O'Brien JD, Lipson S, Deppe DG. Photonic crystal lasers with quantum dots active regions and their temperature dependence Optics Infobase Conference Papers 1
2005 Hendrickson JR, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a Photonic Crystal Slab Nanocavity by Condensation of Xenon for Cavity QED Experiments Frontiers in Optics. DOI: 10.1364/Fio.2005.Pdp_A2  1
2005 Gobet M, Deppe DG. Quantum dot cascade heterostructure based on in-plane dipole moments for unipolar infrared cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 5792: 54-60. DOI: 10.1117/12.609709  1
2005 Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1737-1739. DOI: 10.1116/1.2091119  1
2005 Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Inert gas maintenance for molecular-beam epitaxy systems Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1257-1261. DOI: 10.1116/1.1878993  1
2005 Yang T, Lipson S, O'Brien JD, Deppe DG. InAs quantum dot photonic crystal lasers and their temperature dependence Ieee Photonics Technology Letters. 17: 2244-2246. DOI: 10.1109/Lpt.2005.857975  1
2005 Gazula D, Quadery S, Deppe DG. Laser diode incorporating a buried etched-void photonic pattern Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 250-251. DOI: 10.1109/LEOS.2005.1547973  1
2005 Deppe DG, Ahn J, Lu D, Freisem S, Muller A, Shin CK. All-epitaxial buried heterostructure quantum dot vertical-cavity surface-emitting lasers and single quantum dot light sources Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 41-42. DOI: 10.1109/LEOS.2005.1547868  1
2005 Jagadish C, Deppe DG, Noda S, Krauss TF, Painter OJ. Guest editorial nanotechnologies for communications Ieee Journal On Selected Areas in Communications. 23: 1305. DOI: 10.1109/Jsac.2005.852905  1
2005 Gibbs H, Khitrova G, Hendrickson J, Yoshie T, Scherer A, Shchekin O, Deppe D. Vacuum Rabi splitting using a single quantum dot in a photonic crystal slab nanocavity Iqec, International Quantum Electronics Conference Proceedings. 2005: 1727-1728. DOI: 10.1109/IQEC.2005.1561157  1
2005 Hendrickson J, Richards BC, Sweet J, Mosor S, Christenson C, Lam D, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Quantum dot photonic-crystal-slab nanocavities: Quality factors and lasing Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.193303  1
2005 Deppe DG, Freisem S, Huang H, Lipson S. Electron transport due to inhomogeneous broadening and its potential impact on modulation speed in p-doped quantum dot lasers Journal of Physics D: Applied Physics. 38: 2119-2125. DOI: 10.1088/0022-3727/38/13/007  1
2005 Lu D, Ahn J, Freisem S, Gazula D, Deppe DG. Lens-shaped all-epitaxial quantum dot microcavity Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2099525  1
2005 Mosor S, Hendrickson J, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2076435  1
2005 Gazula D, Ahn J, Lu D, Huang H, Deppe DG. Intracavity grating-confined all-epitaxial vertical-cavity surface-emitting laser based on selective interface Fermi-level pinning Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897049  1
2005 Gündoǧdu K, Hall KC, Koerperick EJ, Pryor CE, Flatté ME, Boggess TF, Shchekin OB, Deppe DG. Electron and hole spin dynamics in semiconductor quantum dots Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1857067  1
2005 Ahn J, Lu D, Deppe DG. All-epitaxial, lithographically defined, current- and mode-confined vertical-cavity surface-emitting laser based on selective interfacial fermi-level pinning Applied Physics Letters. 86: 021106-1-021106-3. DOI: 10.1063/1.1849417  1
2005 Gazula D, Quadery S, Deppe DG. Laser diode incorporating buried etched-void photonic pattern Electronics Letters. 41: 1223-1225. DOI: 10.1049/El:20052511  1
2005 Deppe DG, Freisem S, Lu D, Ahn J, Gazula D, Muller A, Shih CK. All-epitaxial quantum dot microcavities for VCSELs and single photon sources 2005 International Semiconductor Device Research Symposium. 2005: 54.  1
2005 Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55.  1
2005 Hendrickson J, Mosor S, Richards BC, Sweet J, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Scanning a photonic crystal slab nanocavity by condensation of xenon for cavity QED experiments Optics Infobase Conference Papers 1
2005 Hendrickson JR, Richards BC, Sweet J, Mosor S, Khitrova G, Gibbs HM, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity Quantum Electronics and Laser Science Conference (Qels). 1: 53-55.  1
2005 Hendrickson J, Gibbs M, Khitrova G, Rupper G, Ell C, Yoshie T, Scherer A, Shchekin OB, Deppe DG. Strong coupling between a single quantum dot and a photonic crystal slab nanocavity Optics Infobase Conference Papers 1
2004 Yoshie T, Scherer A, Hendrickson J, Khitrova G, Gibbs HM, Rupper G, Ell C, Shchekin OB, Deppe DG. Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity. Nature. 432: 200-3. PMID 15538363 DOI: 10.1038/Nature03119  1
2004 Gazula D, Zhang M, Deppe DG. Growth of self-assembled InAs quantum dots for InP- Based heterostructures Proceedings of Spie - the International Society For Optical Engineering. 5361: 15-20. DOI: 10.1117/12.537769  1
2004 Lu D, Chen H, Ahn J, Deppe DG. All-epitaxial apertured GaAs-based vertical cavity surface emitting laser Proceedings of Spie - the International Society For Optical Engineering. 5364: 97-100. DOI: 10.1117/12.533500  1
2004 Hall KC, Gündoǧdu K, Boggess TF, Shchekin OB, Deppe DG. Carrier and spin dynamics in charged quantum dots Proceedings of Spie - the International Society For Optical Engineering. 5361: 76-87. DOI: 10.1117/12.531620  1
2004 Yoshie T, Lončar M, Okamoto K, Qiu Y, Shchekin OB, Chen H, Deppe DG, Scherer A. Photonic crystal nanocavities with quantum well or quantum dot active material Proceedings of Spie - the International Society For Optical Engineering. 5360: 16-23. DOI: 10.1117/12.525869  1
2004 Deppe DG. III-V Nanostructures for quantum dot lasers and microcavity devices Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 4-7. DOI: 10.1109/ICIPRM.2004.1442597  1
2004 Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Ultrafast electron capture into p-modulation-doped quantum dots Applied Physics Letters. 85: 4570-4572. DOI: 10.1063/1.1815371  1
2004 Lu D, Ahn J, Huang H, Deppe DG. All-epitaxial mode-confined vertical-cavity surface-emitting laser Applied Physics Letters. 85: 2169-2171. DOI: 10.1063/1.1795982  1
2004 Cao C, Deppe DG. Impact of spin blocking on the energy relaxation of electrons in quantum-dot lasers Applied Physics Letters. 84: 2736-2738. DOI: 10.1063/1.1705729  1
2004 Gündoǧdu K, Hall KC, Boggess TF, Deppe DG, Shchekin OB. Efficient electron spin detection with positively charged quantum dots Applied Physics Letters. 84: 2793-2795. DOI: 10.1063/1.1695637  1
2004 Lu D, Ahn J, Deppe DG. All-epitaxial current- And mode-confined AlGaAs GaAs VCSEL Electronics Letters. 40: 1336-1337. DOI: 10.1049/El:20046159  1
2004 Lu D, Ahn J, Deppe DG. All-epitaxial current- and mode-confined AlGaAs/GaAs vertical-cavity surface-emitting laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 246-247.  1
2004 Yoshie T, Shchekin OB, Chen H, Deppe DG, Schere A. Planar Photonic Crystal Nanolasers (II): Low-threshold Quantum Dot Lasers Ieice Transactions On Electronics. 300-307.  1
2004 Yoshie T, Scherer A, Shchekin OB, Chen H, Deppe DG. High spontaneous emission coupling factor in photonic crystal nanolasers Osa Trends in Optics and Photonics Series. 97: 919.  1
2003 Deppe DG, Shchekin OB, Huang H. High to quantum dot lasers based on charge-controlled active regions Frontiers in Optics. DOI: 10.1364/Fio.2003.Thm1  1
2003 Yoshie T, Schchekin OB, Chen H, Deppe DG, Scherer A. Design and characterization of quantum dot photonic crystal lasers Proceedings of Spie - the International Society For Optical Engineering. 5000: 27-34. DOI: 10.1117/12.479515  1
2003 Deppe DG, Shchekin OB, Mo Q, Chen H, Huang Z. Novel semiconductor lasers based on quantum dots 2003 Ieee/Leos International Conference On Optical Mems. 167-168. DOI: 10.1109/OMEMS.2003.1233518  1
2003 Scherer A, Yoshie T, Loncar M, Vuckovic J, Deppe D, Okamoto K. 2-D photonic crystal microcavities Leos Summer Topical Meeting. 2003: 47. DOI: 10.1109/LEOSST.2003.1224269  1
2003 Yang T, Shchekin O, O'Brien JD, Deppe DG. Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions Electronics Letters. 39: 1657-1658. DOI: 10.1049/el:20031058  1
2003 Mo Q, Chen H, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature continuous-wave operation of GaAs-based vertical cavity surface emitting laser based on p-type GaAs/air mirror Electronics Letters. 39: 525-526. DOI: 10.1049/El:20030309  1
2003 Deppe DG, Huang H. Quantum Dot Lasers Advanced Semiconductor and Organic Nano-Techniques. 367-410. DOI: 10.1016/B978-012507060-7/50012-X  1
2003 Deppe DG, Shchekin OB, Ahn J, Cao C, Gundogdu K, Hall K, Zhang L, Boggess T. Modulation characteristics of P-doped quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 116-117.  1
2003 Shchekin OB, Huang H, Deppe DG. 1.3-micron high to quantum dot lasers based on charge-controlled active regions Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 80-84.  1
2003 Chen H, Mo Q, Huang Z, Shchekin OB, Cao C, Lipson S, Deppe DG. Room-temperature CW operation of 980nm air-gap VCSELs Osa Trends in Optics and Photonics Series. 88: 1142-1144.  1
2002 Shchekin OB, Deppe DG. Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region Ieee Photonics Technology Letters. 14: 1231-1233. DOI: 10.1109/LPT.2002.801597  1
2002 Deppe DG, Huang H, Shchekin OB. Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed Ieee Journal of Quantum Electronics. 38: 1587-1593. DOI: 10.1109/Jqe.2002.805246  1
2002 Deppe DG, Shchekin OB. Quantum dot lasers: Temperature insensitive operation and the prospect for high speed modulation Device Research Conference - Conference Digest, Drc. 2002: 135-136. DOI: 10.1109/DRC.2002.1029553  1
2002 Shchekin OB, Deppe DG. 1.3 μm InAs quantum dot laser with T o=161K from 0 to 80°C Applied Physics Letters. 80: 3277-3279. DOI: 10.1063/1.1476708  1
2002 Shchekin OB, Deppe DG. The role of p-type doping and the density of states on the modulation response of quantum dot lasers Applied Physics Letters. 80: 2758-2760. DOI: 10.1063/1.1469212  1
2002 Chen H, Zou Z, Cao C, Deppe DG. High differential efficiency (>16%) quantum dot microcavity light emitting diode Applied Physics Letters. 80: 350-352. DOI: 10.1063/1.1434310  1
2002 Yoshie T, Shchekin OB, Chen H, Deppe DG, Scherer A. Quantum dot photonic crystal lasers Electronics Letters. 38: 967-968. DOI: 10.1049/El:20020650  1
2002 Shchekin OB, Ahn J, Deppe DG. High temperature performance of self-organised quantum dot laser with stacked p-doped active region Electronics Letters. 38: 712-713. DOI: 10.1049/el:20020509  1
2002 Loncar M, Yoshie T, Vuckovic J, Scherer A, Chen H, Deppe D, Gogna P, Qiu Y, Nedeljkovic D, Pearsall TP. Nanophotonics based on planar photonic crystals Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 671-672.  1
2002 Yoshie T, Vuckovic J, Loncar M, Scherer A, Chen H, Deppe D. Optical characterization of high quality two dimensional photonic crystal cavities Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 74: 75-76.  1
2001 Brick P, Ell C, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Johnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in a semiconductor microcavity Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 232. DOI: 10.1109/QELS.2001.962146  1
2001 Qasaimeh O, Zhou W, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications Journal of Lightwave Technology. 19: 546-552. DOI: 10.1109/50.920853  1
2001 Huang H, Deppe DG. Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser Ieee Journal of Quantum Electronics. 37: 691-698. DOI: 10.1109/3.918583  1
2001 Yoshie T, Vučković J, Scherer A, Chen H, Deppe D. High quality two-dimensional photonic crystal slab cavities Applied Physics Letters. 79: 4289-4291. DOI: 10.1063/1.1427748  1
2001 Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Cao C, Shchekin OB. Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots Applied Physics Letters. 79: 3320-3322. DOI: 10.1063/1.1418035  1
2001 Yoshie T, Scherer A, Chen H, Huffaker D, Deppe D. Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters Applied Physics Letters. 79: 114-116. DOI: 10.1063/1.1377851  1
2001 Shchekin OB, Deppe DG, Lu D. Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots Applied Physics Letters. 78: 3115-3117. DOI: 10.1063/1.1372362  1
2001 Zou Z, Chen H, Deppe DG. Apertured quantum dot microcavity light emitting diodes Applied Physics Letters. 78: 3067-3069. DOI: 10.1063/1.1341223  1
2001 Boggess TF, Zhang L, Deppe DG, Huffaker DL, Cao C. Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots Applied Physics Letters. 78: 276-278. DOI: 10.1063/1.1337638  1
2001 Lee ES, Ell C, Brick P, Spiegelberg C, Gibbs HM, Khitrova G, Deppe DG, Huffaker DL. Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities Journal of Applied Physics. 89: 807-809. DOI: 10.1063/1.1330758  1
2001 Deppe DG, Shchekin O, Park G, Boggess TF, Zhang L. Carrier dynamics, laser characteristics, and microcavity effects based on InAs and InGaAs quantum dot light emitters Journal of the Korean Physical Society. 39: S398-S401.  1
2001 Deppe DG, Chen H, Zou Z, Shchekin OB, Cao C, Boggess T, Zhang L. Long-wavelength quantum dots: Carrier dynamics and applications to lasers and light emitting diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 265-266.  1
2001 Zhang L, Boggess TF, Gundogdu K, Flatté ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Ultrafast carrier dynamics in size-controlled, self-assembled, InGaAs/GaAs quantum dots Conference On Lasers and Electro-Optics Europe - Technical Digest. 357-358.  1
2001 Deppe DG, Cao C, Shchekin OB, Zou Z, Chen H, Boggess TF, Zhang L, Gundogdu K. Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 79-82.  1
2000 Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities. Physical Review Letters. 85: 5392-5. PMID 11136004 DOI: 10.1103/Physrevlett.85.5392  0.92
2000 Deppe DG, Park G, Shchekin OB. Temperature dependence of quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 4078: 90-99. DOI: 10.1117/12.392129  1
2000 Shchekin OB, Park G, Huffaker DL, Mo Q, Deppe DG. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122. DOI: 10.1109/68.874208  1
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232. DOI: 10.1109/68.826897  1
2000 Zou Z, Huffaker DL, Deppe DG. Ultralow-threshold cryogenic vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 12: 1-3. DOI: 10.1109/68.817427  1
2000 Park G, Shchekin OB, Deppe DG. Temperature dependence of gain saturation in multilevel quantum dot lasers Ieee Journal of Quantum Electronics. 36: 1065-1071. DOI: 10.1109/3.863959  1
2000 Huang H, Deppe DG. Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode Ieee Journal of Quantum Electronics. 36: 674-679. DOI: 10.1109/3.845722  1
2000 Huffaker DL, Park G, Zhengzhong Z, Shchekin OB, Deppe DG. Continuous-wave low-threshold performance of 1.3-μm InGaAs-GaAs quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 452-461. DOI: 10.1109/2944.865100  1
2000 Ell C, Brick P, Hübner M, Lee ES, Lyngnes O, Prineas JP, Khitrova G, Gibbs HM, Kira M, Jahnke F, Koch SW, Deppe DG, Huffaker DL. Quantum correlations in the nonperturbative regime of semiconductor microcavities Physical Review Letters. 85: 5392-5395. DOI: 10.1103/PhysRevLett.85.5392  1
2000 Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468. DOI: 10.1063/1.127012  1
2000 Qasaimeh O, Zhou WD, Bhattacharya P, Huffaker D, Deppe DG. Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode Electronics Letters. 36: 1955-1957. DOI: 10.1049/El:20001352  1
2000 Chen H, Zou Z, Shchekin OB, Deppe DG. InAs quantum-dot lasers operating near 1.3 μm with high characteristic temperature for continuous-wave operation Electronics Letters. 36: 1703-1704. DOI: 10.1049/El:20001224  1
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature Electronics Letters. 36: 1283-1284. DOI: 10.1049/El:20000909  1
2000 Park G, Shchekin OB, Huffaker DL, Deppe DG. Very low threshold oxide-confined 1.3 μm GaAs-based quantum dot laser Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 349-350.  1
2000 Deppe DG, Huffaker DL, Huang H, Boggess TF, Zhang L. Wetting layer entropy effect on the modulation response of self-organized quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 306-307.  1
2000 Lee ES, Park S, Ell O, Brick P, Gibbs HM, Khitrova G, Deppe DG, Huffaker DL. Normal mode coupling in a 3D semiconductor nanocavity Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 58-59.  1
2000 Boggess TF, Zhang L, Flatte ME, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 366-367.  1
2000 Deppe DG, Huffaker DL. Quantum dimensionality, entropy, and the modulation response of quantum dot lasers Applied Physics Letters. 77: 3325-3327.  1
2000 Shchekin OB, Park G, Huffaker DL, Deppe DG. Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468.  1
2000 Zhang L, Boggess TF, Deppe DG, Huffaker DL, Shchekin OB, Cao C. Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 76: 1222-1224.  1
2000 Yoshie T, Painter O, Scherer A, Huffaker D, Deppe D. Photonic crystal defect microcavities with indium arsenide quantum dots Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 415-416.  1
1999 Huffaker DL, Deppe DG. Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 11: 934-936. DOI: 10.1109/68.775304  1
1999 Park G, Huffaker DL, Zou Z, Shchekin OB, Deppe DG. Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303. DOI: 10.1109/68.748215  1
1999 Deppe DG, Graham LA, Huffaker DL. Enhanced spontaneous emission using quantum dots and an apertured microcavity Ieee Journal of Quantum Electronics. 35: 1502-1508. DOI: 10.1109/3.792581  1
1999 Deppe DG, Huffaker DL, Csutak S, Zou Z, Park G, Shchekin OB. Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246. DOI: 10.1109/3.777226  1
1999 Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269. DOI: 10.1063/1.125320  1
1999 Zou Z, Huffaker DL, Csutak S, Deppe DG. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser Applied Physics Letters. 75: 22-24. DOI: 10.1063/1.124264  0.92
1999 Deppe DG, Huang H, Graham LA, Huffaker DL. Purcell effect and the bias-free pulse response of vertical-cavity surface-emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 560-561.  1
1999 Huffaker DL, Zou Z, Deppe DG. Reduced cavity loss for ultra-low threshold vertical cavity surface emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 391-392.  1
1999 Deppe DG, Huffaker DL, Huang H, Graham LA. Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: Can scaling the mode size improve laser performance? Proceedings of Spie - the International Society For Optical Engineering. 3897: 12-21.  1
1999 Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. Quantum dot active regions for extended wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 3899: 134-146.  1
1999 Shchekin OB, Park G, Huffaker DL, Deppe DG. 1.3 μm quantum dot lasers with single and stacked active layers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 465-466.  1
1999 Deppe DG, Huang H. Quantum-dot vertical-cavity surface-emitting laser based on the Purcell effect Applied Physics Letters. 75: 3455-3457.  1
1999 Park G, Shchekin OB, Csutak S, Huffaker DL, Deppe DG. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269.  1
1999 Zou Z, Huffaker DL, Csutak S, Deppe DG. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser Applied Physics Letters. 75: 22-24.  1
1999 Huffaker DL, Zou ZZ, Park G, Shchekin OB, Deppe DG. Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 μm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536.  1
1999 Graham LA, Huffaker DL, Deppe DG. Spontaneous lifetime control in a native-oxide-apertured microcavity Applied Physics Letters. 74: 2408-2410.  1
1999 Graham LA, Huffaker DL, Csutak SM, Deng Q, Deppe DG. Spontaneous lifetime control of quantum dot emitters in apertured microcavities Journal of Applied Physics. 85: 3383-3385.  1
1999 Zou Z, Huffaker DL, Csutak S, Shchekin OB, Graham LA, Deppe DG. Ground state lasing at 1.07 μm from InGaAs/GaAs QD VCSEL Leos Summer Topical Meeting. 81-82.  1
1999 Huffaker DL, Shchekin O, Park G, Zou ZZ, Csutak S, Deppe DG. InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs Leos Summer Topical Meeting. 17-18.  1
1999 Deppe DG, Huffaker DL, Graham LA, Zou Z, Csutak S. Selective oxidation to form dielectric apertures for low threshold VCSELs and microcavity spontaneous light emitters Materials Research Society Symposium - Proceedings. 573: 81-92.  1
1999 Huffaker DL, Shchekin O, Park G, Zou ZZ, Deppe DG. Temperature dependence of lasing characteristics for 1.3 μm GaAs-based quantum dot lasers Iqec, International Quantum Electronics Conference Proceedings. 253-254.  1
1999 Graham LA, Deng Q, Csutak SM, Huffaker DL, Deppe DG. Observation of enhanced spontaneous decay in 1 μm aperture microcavities with InGaAlAs quantum dot active regions Proceedings of Spie - the International Society For Optical Engineering. 3625: 288-292.  1
1999 Gibbs HM, Khitrova G, Lee ES, Park S, Ell C, Deppe DG, Huffaker DL. Toward quantum entanglement in a quantum-dot nanocavity Leos Summer Topical Meeting. 41-42.  1
1998 Deng Q, Deppe DG. Spontaneous lifetime in a dielectrically-apertured Fabry-Perot microcavity Optics Express. 2: 157-162. DOI: 10.1364/Oe.2.000157  1
1998 Huffaker DL, Schaub JD, Deng H, Deppe DG. Quantum dot active regions for extended wavelength range GaAs-based light emitting devices Proceedings of Spie - the International Society For Optical Engineering. 3283: 144-151. DOI: 10.1117/12.316678  1
1998 Deng Q, Deppe DG. Cavity length effect on lasing mode of a dielectrically apertured Fabry-Perot microcavity Proceedings of Spie - the International Society For Optical Engineering. 3283: 262-268. DOI: 10.1117/12.316675  1
1998 Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260  1
1998 Zou Z, Shchekin OB, Park G, Huffaker DL, Deppe DG. Threshold temperature dependence of lateral-cavity quantum-dot lasers Ieee Photonics Technology Letters. 10: 1673-1675. DOI: 10.1109/68.730465  1
1998 Oh TH, Shchekin OB, Deppe DG. Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture Ieee Photonics Technology Letters. 10: 1064-1066. DOI: 10.1109/68.701503  1
1998 Deppe DG, Kudari A, Huffaker DL, Deng H, Deng Q, Campbell JC. Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector Ieee Photonics Technology Letters. 10: 252-254. DOI: 10.1109/68.655375  1
1998 Huffaker DL, Deng H, Deppe DG. 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 10: 185-187. DOI: 10.1109/68.655352  1
1998 Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Cavity-induced antiguiding in a selectively oxidized vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 10: 12-14. DOI: 10.1109/68.651084  1
1998 Deppe DG, Deng Q. Tunneling transport and diffusion in weakly coupled quantum dot ensembles Applied Physics Letters. 73: 3536-3538. DOI: 10.1063/1.122799  1
1998 Park G, Shchekin OB, Huffaker DL, Deppe DG. Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels Applied Physics Letters. 73: 3351-3353. DOI: 10.1063/1.122766  1
1998 Klein B, Register LF, Hess K, Deppe DG, Deng Q. Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers Applied Physics Letters. 73: 3324-3326. DOI: 10.1063/1.122710  1
1998 Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG. 1.3 μm room-temperature GaAs-based quantum-dot laser Applied Physics Letters. 73: 2564-2566. DOI: 10.1063/1.122534  1
1998 Huffaker DL, Deppe DG. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots Applied Physics Letters. 73: 520-522. DOI: 10.1063/1.121920  1
1998 Huffaker DL, Deppe DG. Electron and hole tunneling in a moderate density quantum dot ensemble with shallow confinement potentials Applied Physics Letters. 73: 366-368. DOI: 10.1063/1.121836  1
1998 Oh TH, McDaniel MR, Huffaker DL, Deppe DG. Guiding and antiguiding effects in epitaxially regrown vertical-cavity surface-emitting lasers Applied Physics Letters. 72: 2782-2784. DOI: 10.1063/1.121458  1
1998 Graham LA, Huffaker DL, Deng Q, Deppe DG. Controlled spontaneous lifetime in microcavity confined InGaAlAs/GaAs quantum dots Applied Physics Letters. 72: 1670-1672. DOI: 10.1063/1.121148  1
1998 Huffaker DL, Graham LA, Deppe DG. Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots Applied Physics Letters. 72: 214-216. DOI: 10.1063/1.120689  1
1998 Huffaker DL, Park G, Shchekin O, Zhou ZZ, Deppe DG. InGaAs/GaAs quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 109-110.  1
1998 Deppe DG, Huffaker DL, Oh TH, Zhou ZZ. Dielectric apertures for mode control in low threshold and single mode vertical-cavity surface-emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 176.  1
1998 Deppe DG, Huffaker DL. Quantum well and quantum dot light emitters confined in oxide-semiconductor microcavities Optics and Photonics News. 9: 30-33.  1
1998 Huffaker DL, Graham LA, Deppe DG. Carrier confinement in InGa(Al)As tunnel-coupled quantum dot light emitters based on ultrasmall apertures Conference On Lasers and Electro-Optics Europe - Technical Digest. 466-467.  1
1997 Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors Ieee Photonics Technology Letters. 9: 866-868. DOI: 10.1109/68.593326  0.92
1997 Deng Q, Deppe DG. Self-consistent calculation of the lasing eigenmode of the dielectrically apertured Fabry-Perot microcavity with idealized or distributed Bragg reflectors Ieee Journal of Quantum Electronics. 33: 2319-2326. DOI: 10.1109/3.644116  1
1997 Deppe DG, Huffaker DL, Oh T, Deng H, Deng Q. Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors Ieee Journal of Selected Topics in Quantum Electronics. 3: 893-904. DOI: 10.1109/2944.640643  0.92
1997 Baklenov O, Huffaker DL, Anselm A, Deppe DG, Streetman BG. Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy Journal of Applied Physics. 82: 6362-6364.  1
1997 Zhang J, Qian Y, Zhu ZH, Lo YH, Huffaker DL, Deppe DG, Hou HQ, Hammons BE, Lin W, Tu YK. Dosage effects on oxygen implanted single-bonded 1.3 μm vertical-cavity surface-emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 426-427.  1
1997 Deppe DG, Huffaker DL, Deng Q, Oh TH, Graham LA. Oxide-confined VCSELs with quantum well and quantum dot active regions Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 287-288.  1
1997 Deppe DG, Deng Q, Huffaker DL. Mode confinement in the ultralow threshold Fabry-Perot microcavity laser Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 164.  1
1996 Huffaker DL, Graham LA, Deng H, Deppe DG. Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors Ieee Photonics Technology Letters. 8: 974-976. DOI: 10.1109/68.508708  1
1996 Huffaker DL, Graham LA, Deppe DG. Fabrication of high-packing-density vertical cavity surface-emitting laser arrays using selective oxidation Ieee Photonics Technology Letters. 8: 596-598. DOI: 10.1109/68.491550  1
1996 Huffaker DL, Deppe DG, Lei C, Hodge LA. Sealing AlAs against oxidative decomposition and its use in device fabrication Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 206-207. DOI: 10.1063/1.115635  1
1995 Rogers TJ, Huffaker DL, Deng H, Deng Q, Deppe DG. Influence of Cavity Tuning on the Transverse Mode in Vertical-Cavity Lasers Ieee Photonics Technology Letters. 7: 238-240. DOI: 10.1109/68.372732  1
1995 Deng H, Lin CC, Huffaker DL, Deng Q, Deppe DG, Rogers TJ. Temperature dependence of the transverse lasing mode in vertical-cavity lasers Journal of Applied Physics. 77: 2279-2286. DOI: 10.1063/1.358816  1
1994 Hansing CC, Deng H, Huffaker DL, Deppe DG, Streetman BG, Sarathy J. Low-threshold continuous-wave surface emitting lasers with etched void confinement Ieee Photonics Technology Letters. 6: 320-322. DOI: 10.1109/68.275477  0.92
1994 Huffaker DL, Lin CC, Deppe DG, Streetman BG, Rogers TJ. Mode Dependence on Mirror Contrast in Fabry-Perot Microcavity Lasers Ieee Photonics Technology Letters. 6: 135-138. DOI: 10.1109/68.275408  1
1994 Huffaker DL, Deppe DG, Kumar K, Rogers TJ. Native-oxide defined ring contact for low threshold vertical-cavity lasers Applied Physics Letters. 65: 97-99. DOI: 10.1063/1.113087  1
1994 Huffaker DL, Deppe DG, Rogers TJ. Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers Applied Physics Letters. 65: 1611-1613. DOI: 10.1063/1.112927  1
1993 Deppe DG, Huffaker DL, Lei C. Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers Proceedings of Spie. 1851: 128-137. DOI: 10.1117/12.147592  0.92
1993 Lei C, Huang Z, Deppe DG, Pinzone CJ, Dupuis RD. Spectral interference effects in the light emission from Fabry-Perot cavities Journal of Applied Physics. 73: 2700-2704. DOI: 10.1063/1.353041  1
1993 Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984  1
1993 Rogers TJ, Lei C, Deppe DG, Streetman BG. Low threshold voltage continuous wave vertical-cavity surface-emitting lasers Applied Physics Letters. 62: 2027-2029. DOI: 10.1063/1.109494  1
1992 Lei C, Deppe DG. Optical gain enhancement in Fabry-Perot microcavity lasers Journal of Applied Physics. 71: 2530-2535. DOI: 10.1063/1.351069  1
1992 Huang Z, Lei C, Deppe DG, Lin CC, Pinzone CJ, Dupuis RD. Spectral and intensity dependence on dipole localization in Fabry-Perot cavities Applied Physics Letters. 61: 2961-2963. DOI: 10.1063/1.108031  1
1992 Huffaker DL, Huang Z, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Effect on spontaneous emission of quantum well placement in a short vertical cavity Applied Physics Letters. 61: 877-879. DOI: 10.1063/1.107775  1
1992 Deppe DG, Huffaker DL, Rogers TJ, Lei C, Huang Z, Streetman BG. First-order phase transition in a laser threshold Applied Physics Letters. 60: 3081-3083. DOI: 10.1063/1.106758  1
1992 Huffaker DL, Lei C, Deppe DG, Pinzone CJ, Neff JG, Dupuis RD. Controlled spontaneous emission in room-temperature semiconductor microcavities Applied Physics Letters. 60: 3203-3205. DOI: 10.1063/1.106739  1
1992 Deppe DG, Lei C. Spontaneous emission and optical gain in a Fabry-Perot microcavity Applied Physics Letters. 60: 527-529. DOI: 10.1063/1.106596  1
1991 Deppe DG, Lei C. Electrodynamics and controlled spontaneous emission in semiconductor microcavity lasers Technical Digest - International Electron Devices Meeting, Iedm. 1991: 607-610. DOI: 10.1109/IEDM.1991.235397  1
1991 Huffaker DL, Lee WD, Deppe DG, Lei C, Rogers TJ, Campbell JC, Streetman BG. Optical memory using a vertical-cavity surface emitting laser Ieee Photonics Technology Letters. 3: 1064-1066. DOI: 10.1109/68.118001  0.92
1991 Deppe DG, Lei C. Spontaneous emission from a dipole in a semiconductor microcavity Journal of Applied Physics. 70: 3443-3448. DOI: 10.1063/1.349236  1
1991 Hall DC, Holonyak N, Deppe DG, Ries MJ, Matyi RJ, Shichijo H, Epler JE. Low-temperature operating life of continuous 300-K AlxGa 1-xAs-GaAs quantum-well heterostructure lasers grown on Si Journal of Applied Physics. 69: 6844-6849. DOI: 10.1063/1.347674  1
1991 Lei C, Rogers TJ, Deppe DG, Streetman BG. Znse/caf2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser Journal of Applied Physics. 69: 7430-7434. DOI: 10.1063/1.347557  1
1991 Deppe DG, Lei C, Rogers TJ, Streetman BG. Bistability in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser Applied Physics Letters. 58: 2616-2618. DOI: 10.1063/1.104811  1
1991 Lei C, Rogers TJ, Deppe DG, Streetman BG. InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth Applied Physics Letters. 58: 1122-1124. DOI: 10.1063/1.104390  1
1991 Dupuis RD, Deppe DG, Pinzone CJ, Gerrard ND, Singh S, Zydzik GJ, van der Ziel JP, Green CA. In 0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength Journal of Crystal Growth. 107: 790-795. DOI: 10.1016/0022-0248(91)90559-N  1
1990 Rogers TJ, Deppe DG, Streetman BG. Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well Applied Physics Letters. 57: 1858-1860. DOI: 10.1063/1.104120  1
1990 Schubert EF, Tu LW, Kopf RF, Zydzik GJ, Deppe DG. Low-threshold vertical cavity surface-emitting lasers with metallic reflectors Applied Physics Letters. 57: 117-119. DOI: 10.1063/1.103960  1
1990 Deppe DG, Singh S, Dupuis RD, Gerrard ND, Zydzik GJ, Van Der Ziel JP, Green CA, Pinzone CJ. Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser Applied Physics Letters. 56: 2172-2174. DOI: 10.1063/1.102958  1
1990 Deppe DG, Gerrard ND, Pinzone CJ, Dupuis RD, Schubert EF. Quarter-wave Bragg reflector stack of InP-In0.53Ga 0.47As for 1.65 μm wavelength Applied Physics Letters. 56: 315-317. DOI: 10.1063/1.102814  1
1988 Deppe DG, Holonyak N, Hsieh KC, Nam DW, Plano WE, Matyi RJ, Shichijo H. Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si Applied Physics Letters. 52: 1812-1814. DOI: 10.1063/1.99633  1
1988 Deppe DG, Plano WE, Dallesasse JM, Hall DC, Guido LJ, Holonyak N. Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor Applied Physics Letters. 52: 825-827. DOI: 10.1063/1.99296  1
1988 Nam DW, Deppe DG, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1-x)0.5P quantum well heterostructures Applied Physics Letters. 52: 1329-1331. DOI: 10.1063/1.99149  1
1988 Deppe DG, Nam DW, Holonyak N, Hsieh KC, Baker JE, Kuo CP, Fletcher RM, Osentowski TD, Craford MG. Impurity-induced layer disordering of high gap Iny(Al xGa1-x)1-yP heterostructures Applied Physics Letters. 52: 1413-1415. DOI: 10.1063/1.99132  1
1988 Hall DC, Deppe DG, Holonyak N, Matyi RJ, Shichijo H, Epler JE. Thermal behavior and stability of room-temperature continuous Al xGa1-xAs-GaAs quantum well heterostructure lasers grown on Si Journal of Applied Physics. 64: 2854-2860. DOI: 10.1063/1.341596  1
1988 Dallesasse JM, Nam DW, Deppe DG, Holonyak N, Fletcher RM, Kuo CP, Osentowski TD, Craford MG. Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers Applied Physics Letters. 53: 1826-1828. DOI: 10.1063/1.100388  1
1988 Deppe DG, Hall DC, Holonyak N, Matyi RJ, Shichijo H, Epler JE. Effects of microcracking on AlxGa1-xAs-GaAs quantum well lasers grown on Si Applied Physics Letters. 53: 874-876. DOI: 10.1063/1.100100  1
1987 Deppe DG, Nam DW, Holonyak N, Hsieh KC, Matyi RJ, Shichijo H, Epler JE, Chung HF. Stability of 300 K continuous operation of p-n AlxGa 1-xAs-GaAs quantum well lasers grown on Si Applied Physics Letters. 51: 1271-1273. DOI: 10.1063/1.98702  1
1987 Deppe DG, Holonyak N, Nam DW, Hsieh KC, Jackson GS, Matyi RJ, Shichijo H, Epler JE, Chung HF. Room-temperature continuous operation of p-n AlxGa 1-xAs-GaAs quantum well heterostructure lasers grown on Si Applied Physics Letters. 51: 637-639. DOI: 10.1063/1.98371  1
1987 Deppe DG, Jackson GS, Holonyak N, Hall DC, Burnham RD, Thornton RL, Epler JE, Paoli TL. Impurity-induced layer-disordered buried heterostructure Al xGa1-xAs-GaAs quantum well edge-injection laser array Applied Physics Letters. 50: 392-394. DOI: 10.1063/1.98209  1
1987 Deppe DG, Jackson GS, Holonyak N, Burnham RD, Thornton RL. Coupled stripe AlxGa1-xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering Applied Physics Letters. 50: 632-634. DOI: 10.1063/1.98103  1
1987 Kaliski RW, Nam DW, Deppe DG, Holonyak N, Hsieh KC, Burnham RD. Thermal annealing and photoluminescence measurements on Al xGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping Journal of Applied Physics. 62: 998-1005. DOI: 10.1063/1.339661  1
1987 Guido LJ, Holonyak N, Hsieh KC, Kaliski RW, Baker JE, Deppe DG, Burnham RD, Thornton RL, Paoli TL. Impurity-induced disordering of AlxGa1-xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1-x barriers Journal of Electronic Materials. 16: 87-91. DOI: 10.1007/Bf02667795  1
1986 Deppe DG, Jackson GS, Holonyak N, Hall DC, Burnham RD, Thornton RL, Epler JE, Paoli TL. Single-mode single-lobe operation of broad area AlxGa 1-xAs-GaAs quantum well lasers Applied Physics Letters. 49: 883-885. DOI: 10.1063/1.97524  1
1986 Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering Applied Physics Letters. 49: 133-134. DOI: 10.1063/1.97201  1
1986 Deppe DG, Guido LJ, Holonyak N, Hsieh KC, Burnham RD, Thornton RL, Paoli TL. Stripe-geometry quantum well heterostructure AlxGa 1-xAs-GaAs lasers defined by defect diffusion Applied Physics Letters. 49: 510-512. DOI: 10.1063/1.97133  1
1986 Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering Applied Physics Letters. 48: 7-9. DOI: 10.1063/1.96769  1
1986 Jackson GS, Deppe DG, Hsieh KC, Holonyak N, Hall DC, Burnham RD, Thornton RL, Paoli TL. Reduced temperature sensitivity AlxGa1-xAs-GaAs quantum well lasers with (Si2)x(GaAs)1-x]] barriers" Applied Physics Letters. 48: 1156-1158. DOI: 10.1063/1.96455  1
1986 Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Opto-electronic device structures fabricated by impurity induced disordering Journal of Crystal Growth. 77: 621-628. DOI: 10.1016/0022-0248(86)90360-X  1
1985 Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. IVA-8 Low-Threshold AlGaAs Laser Diodes Fabricated by Silicon Impurity-Induced Disordering Ieee Transactions On Electron Devices. 32: 2541-2542. DOI: 10.1109/T-Ed.1985.22345  1
1985 Thornton RL, Burnham RD, Paoli TL, Holonyak N, Deppe DG. Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering Applied Physics Letters. 47: 1239-1241. DOI: 10.1063/1.96290  1
1985 Deppe DG, Hsieh KC, Holonyak N, Burnham RD, Thornton RL. Low-threshold disorder-defined buried-heterostructure AlxGa 1-xAs-GaAs quantum well lasers Journal of Applied Physics. 58: 4515-4520. DOI: 10.1063/1.336265  1
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