Joe C. Campbell - Publications

Affiliations: 
Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

218 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Peng Y, Sun K, Shen Y, Beling A, Campbell JC. Photonic generation of pulsed microwave signals in the X-, Ku- and K-band. Optics Express. 28: 28563-28572. PMID 32988123 DOI: 10.1364/OE.399102  0.8
2020 Chen D, Sun K, Jones AH, Campbell JC. Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications. Optics Express. 28: 24379-24388. PMID 32906979 DOI: 10.1364/OE.399022  0.56
2020 Nakamura T, Davila-Rodriguez J, Leopardi H, Sherman JA, Fortier TM, Xie X, Campbell JC, McGrew WF, Zhang X, Hassan YS, Nicolodi D, Beloy K, Ludlow AD, Diddams SA, Quinlan F. Coherent optical clock down-conversion for microwave frequencies with 10 instability. Science (New York, N.Y.). 368: 889-892. PMID 32439794 DOI: 10.1126/science.abb2473  0.56
2019 Yuan Y, Li Y, Abell J, Zheng J, Sun K, Pinzone C, Campbell JC. Triple-mesa avalanche photodiodes with very low surface dark current. Optics Express. 27: 22923-22929. PMID 31510576 DOI: 10.1364/OE.27.022923  0.56
2019 Yuan Y, Jung D, Sun K, Zheng J, Jones AH, Bowers JE, Campbell JC. III-V on silicon avalanche photodiodes by heteroepitaxy. Optics Letters. 44: 3538-3541. PMID 31305567 DOI: 10.1364/OL.44.003538  0.56
2018 Davila-Rodriguez J, Xie X, Zang J, Long CJ, Fortier TM, Leopardi H, Nakamura T, Campbell JC, Diddams SA, Quinlan F. Optimizing the linearity in high-speed photodiodes. Optics Express. 26: 30532-30545. PMID 30469951 DOI: 10.1364/OE.26.030532  0.56
2017 Jones AH, Yuan Y, Ren M, Maddox SJ, Bank SR, Campbell JC. AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence. Optics Express. 25: 24340-24345. PMID 29041378  0.8
2017 Shen Y, Feng S, Xie X, Zang J, Li S, Su T, Shang K, Lai W, Liu G, Ben Yoo SJ, Campbell JC. Hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors. Optics Express. 25: 9521-9527. PMID 28468334  0.8
2016 Sampath AV, Chen Y, Zhou Q, Enck RW, Garrett GA, Vanmil BL, Chung RB, Reed ML, Shen H, Campbell JC, Wraback M. AlGaN/SiC heterojunction ultraviolet photodiodes Materials Science Forum. 858: 1206-1209. DOI: 10.4028/www.scientific.net/MSF.858.1206  0.88
2016 Beling A, Xie X, Campbell JC. High-power, High-linearity photodiodes Optica. 3: 328-338. DOI: 10.1364/OPTICA.3.000328  0.88
2016 Ferraro MS, Rabinovich WS, Clark WR, Waters WD, Campbell JC, Mahon R, Vaccaro K, Krejca BD. Impact ionization engineered avalanche photodiode arrays for free space optical communication Proceedings of Spie - the International Society For Optical Engineering. 9739. DOI: 10.1117/12.2212725  0.52
2016 Ferraro MS, Rabinovich WS, Clark WR, Waters WD, Campbell JC, Mahon R, Vaccaro K, Krejca BD, D'Ambrosio P. Impact-ionization-engineered avalanche photodiode arrays for free-space optical communication Optical Engineering. 55. DOI: 10.1117/1.OE.55.11.111609  0.52
2016 Li Q, Li K, Fu Y, Xie X, Yang Z, Beling A, Campbell JC. High-Power Flip-Chip Bonded Photodiode with 110 GHz Bandwidth Journal of Lightwave Technology. 34: 2139-2144. DOI: 10.1109/JLT.2016.2520826  0.88
2016 Xie X, Zhou Q, Norberg E, Jacob-Mitos M, Chen Y, Yang Z, Ramaswamy A, Fish G, Campbell JC, Beling A. High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator Journal of Lightwave Technology. 34: 73-78. DOI: 10.1109/JLT.2015.2491258  0.88
2016 Campbell JC. Recent Advances in Avalanche Photodiodes Journal of Lightwave Technology. 34: 278-285. DOI: 10.1109/JLT.2015.2453092  0.88
2016 Woodson ME, Ren M, Maddox SJ, Chen Y, Bank SR, Campbell JC. Publisher's Note: Low-noise AlInAsSb avalanche photodiode (Appl. Phys. Lett. (2016) 108 (081102)) Applied Physics Letters. 108. DOI: 10.1063/1.4944729  0.52
2016 Woodson ME, Ren M, Maddox SJ, Chen Y, Bank SR, Campbell JC. Low-noise AlInAsSb avalanche photodiode Applied Physics Letters. 108. DOI: 10.1063/1.4942372  0.52
2016 Fortier TM, Rolland A, Quinlan F, Baynes FN, Metcalf AJ, Hati A, Ludlow AD, Hinkley N, Shimizu M, Ishibashi T, Campbell JC, Diddams SA. Optically referenced broadband electronic synthesizer with 15 digits of resolution Laser and Photonics Reviews. DOI: 10.1002/lpor.201500307  0.52
2015 Hayat MM, Zarkesh-Ha P, El-Howayek G, Efroymson R, Campbell JC. Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing. Optics Express. 23: 24035-41. PMID 26368495 DOI: 10.1364/OE.23.024035  0.52
2015 Phookan S, Sutton AC, Walling I, Smith A, O'Connor KA, Campbell JC, Calos M, Yu W, Pilitsis JG, Brotchie JM, Shin DS. Gap junction blockers attenuate beta oscillations and improve forelimb function in hemiparkinsonian rats. Experimental Neurology. 265: 160-70. PMID 25622779 DOI: 10.1016/j.expneurol.2015.01.004  0.48
2015 Beling A, Campbell JC, Li K, Li Q, Wang Y, Woodson ME, Xie X, Yang Z. High-power photodiodes for analog applications Ieice Transactions On Electronics. 764-768. DOI: 10.1587/transele.E98.C.764  0.52
2015 Baynes FN, Quinlan F, Fortier TM, Zhou Q, Beling A, Campbell JC, Diddams SA. Attosecond timing in optical-to-electrical conversion Optica. 2: 141-146. DOI: 10.1364/OPTICA.2.000141  0.52
2015 Xie X, Li K, Li Q, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals with peak powers up to 14.2 watt Cleo: Science and Innovations, Cleo-Si 2015. 2267. DOI: 10.1364/CLEO_SI.2015.STh3F.5  0.88
2015 Quinlan F, Sun W, Fortier TM, Deschenes JD, Fu Y, Campbell JC, Diddams SA. Broadband phase noise limit in the direct detection of ultralow jitter optical pulses Cleo: Science and Innovations, Cleo-Si 2015. 2267. DOI: 10.1364/CLEO_SI.2015.SF1L.2  0.88
2015 Chen XJ, Ren M, Chen Y, Johnson EB, Campbell JC, Christian JF. Characterization of Al0.8Ga0.2As geiger photodiode Proceedings of Spie - the International Society For Optical Engineering. 9601. DOI: 10.1117/12.2188473  0.52
2015 Li K, Xie X, Rouvalis E, Fedderwitz S, Steffan AG, Li Q, Yang Z, Beling A, Campbell JC. High-power photodetector modules for microwave photonic applications Proceedings of Spie - the International Society For Optical Engineering. 9362. DOI: 10.1117/12.2078214  0.88
2015 Quinlan F, Baynes FN, Sun W, Fortier TM, Beling A, Campbell JC, Diddams SA. Optical-to-electrical frequency conversion with attosecond timing 2015 1st Ursi Atlantic Radio Science Conference, Ursi At-Rasc 2015. DOI: 10.1109/URSI-AT-RASC.2015.7303018  0.52
2015 Li K, Xie X, Li Q, Shen Y, Woodsen ME, Yang Z, Beling A, Campbell JC. High-power photodiode integrated with coplanar patch antenna for 60-GHz applications Ieee Photonics Technology Letters. 27: 650-653. DOI: 10.1109/LPT.2015.2389652  0.88
2015 Ren M, Zheng X, Chen Y, Chen XJ, Johnson EB, Christian JF, Campbell JC. Al0.8Ga0.2as avalanche photodiodes for single-photon detection Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/JQE.2015.2491648  0.88
2015 Beling A, Campbell JC. Heterogeneously integrated photodiodes on silicon Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/JQE.2015.2480595  0.88
2015 Xie X, Li K, Shen Y, Li Q, Zang J, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals Journal of Lightwave Technology. 33: 3808-3814. DOI: 10.1109/JLT.2015.2448595  0.52
2015 Campbell JC. High-power, high-speed for RF photonics applications 2015 Ieee Photonics Conference, Ipc 2015. 124-125. DOI: 10.1109/IPCon.2015.7323745  0.88
2015 Hughes S, Chan H, Landgren D, Cook K, King M, Swank D, Ward C, Wagner B, Campbell J, Beling A, Stark AJ. Co-design and construction of novel antenna array and high-power photodiode packaging 2015 Ieee Photonics Conference, Ipc 2015. 120-121. DOI: 10.1109/IPCon.2015.7323691  0.52
2015 Yang Z, Xie X, Li Q, Campbell JC, Beling A. 20 GHz analog photonic link with 16 dB gain based on a high-power balanced photodiode 2015 Ieee Photonics Conference, Ipc 2015. 144-145. DOI: 10.1109/IPCon.2015.7323665  0.52
2015 Xie X, Zhou Q, Norberg E, Jacob-Mitos M, Yang Z, Chen Y, Ramaswamy A, Fish G, Campbell JC, Beling A. High-power heterogeneously integrated waveguide-coupled balanced photodiodes on silicon-on-insulator 2015 Ieee Photonics Conference, Ipc 2015. 468-469. DOI: 10.1109/IPCon.2015.7323582  0.52
2015 Ren M, Maddox S, Chan Y, Woodson M, Bank S, Campbell JC. Low excess noise AlInAsSb staircase avalanche photodiode Device Research Conference - Conference Digest, Drc. 2015: 1-2. DOI: 10.1109/DRC.2015.7175563  0.52
2015 Hughes S, Chan H, Landgren D, Cook K, King M, Swank D, Ward C, Wagner B, Campbell J, Beling A, Stark AJ. Integration of an X-band antenna array with high power photodiodes 2015 Ieee Avionics and Vehicle Fiber-Optics and Photonics Conference, Avfop 2015. 42-43. DOI: 10.1109/AVFOP.2015.7356642  0.52
2015 Li L, Greaney MJ, Li K, Sachdeva A, Brutchey RL, Campbell JC. Effects of surface ligands on energetic disorder and charge transport of P3HT: CdSe hybrid solar cells Physica Status Solidi (B) Basic Research. 252: 1325-1333. DOI: 10.1002/pssb.201451525  0.88
2015 Xie X, Li K, Li Q, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals with peak powers up to 14.2 Watt Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015.  0.52
2015 Quinlan F, Sun W, Fortier TM, Deschenes JD, Fu Y, Campbell JC, Diddams SA. Broadband phase noise limit in the direct detection of ultralow jitter optical pulses Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015.  0.52
2015 Xie X, Zhou Q, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals with peak powers up to 7.2 watt Conference On Optical Fiber Communication, Technical Digest Series. 2015.  0.52
2015 Campbell JC. Recent advances in avalanche photodiodes Optical Fiber Communication Conference, Ofc 2015 0.88
2015 Xie X, Zhou Q, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals with peak powers up to 7.2 Watt Optical Fiber Communication Conference, Ofc 2015 0.88
2015 Xie X, Zhou Q, Norberg E, Jacob-Mitos M, Chen Y, Ramaswamy A, Fish G, Bowers JE, Campbell J, Beling A. Heterogeneously integrated waveguide-coupled photodiodes on SOI with 12 dBm output power at 40 GHz Conference On Optical Fiber Communication, Technical Digest Series. 2015.  0.52
2014 Sun W, Quinlan F, Fortier TM, Deschenes JD, Fu Y, Diddams SA, Campbell JC. Broadband noise limit in the photodetection of ultralow jitter optical pulses. Physical Review Letters. 113: 203901. PMID 25432042 DOI: 10.1103/PhysRevLett.113.203901  0.8
2014 Campbell JC, Jeyamohan SB, De La Cruz P, Chen N, Shin D, Pilitsis JG. Place conditioning to apomorphine in rat models of Parkinson's disease: differences by dose and side-effect expression. Behavioural Brain Research. 275: 114-9. PMID 25205367 DOI: 10.1016/j.bbr.2014.09.002  0.48
2014 Campbell JC, Stipcevic T, Flores RE, Perry C, Kippin TE. Alcohol exposure inhibits adult neural stem cell proliferation. Experimental Brain Research. 232: 2775-84. PMID 24770860 DOI: 10.1007/s00221-014-3958-1  0.48
2014 Quinlan F, Baynes FN, Fortier TM, Zhou Q, Cross A, Campbell JC, Diddams SA. Optical amplification and pulse interleaving for low-noise photonic microwave generation. Optics Letters. 39: 1581-4. PMID 24690843 DOI: 10.1364/OL.39.001581  0.88
2014 Xie X, Zhou Q, Li K, Shen Y, Li Q, Yang Z, Beling A, Campbell JC. Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond Optica. 1: 429-435. DOI: 10.1364/OPTICA.1.000429  0.52
2014 Sampath AV, Chen Y, Rodak LE, Zhou Q, Campbell JC, Shen H, Wraback M. Enhancing the deep ultraviolet performance Of 4H-SiC based photodiodes Ecs Transactions. 61: 227-234. DOI: 10.1149/06104.0227ecst  0.88
2014 Rolland A, Fortier TM, Quinlan F, Baynes FN, Campbell J, Diddams SA. Low-noise and agile X-band synthesizer based on optical frequency division 2014 International Topical Meeting On Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, Mwp/Apmp 2014 - Proceedings. 61-64. DOI: 10.1109/MWP.2014.6994490  0.32
2014 Ren M, Chen Y, Sun W, Chen XJ, Johnson EB, Christian JF, Campbell JC. Linear- and geiger-mode characteristics of Al0.8Ga0.2As Avalanche Photodiodes Ieee Photonics Technology Letters. 26: 2480-2483. DOI: 10.1109/LPT.2014.2359177  0.88
2014 Sun W, Zheng X, Campbell JC. Study of excess noise factor under nonlocal effect in avalanche photodiodes Ieee Photonics Technology Letters. 26: 2150-2153. DOI: 10.1109/LPT.2014.2348914  0.88
2014 Ren M, Liang Y, Sun W, Wu G, Campbell JC, Zeng H. Timing response of sinusoidal-gated geiger mode InGaAs/InP APD Ieee Photonics Technology Letters. 26: 1762-1765. DOI: 10.1109/LPT.2014.2334057  0.88
2014 Li K, Xie X, Zhou Q, Beling A, Campbell JC. High power 20-GHz photodiodes with resonant microwave circuits Ieee Photonics Technology Letters. 26: 1303-1306. DOI: 10.1109/LPT.2014.2322496  0.88
2014 Beling A, Campbell JC. High-Speed Photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/JSTQE.2014.2341573  0.88
2014 Yuan J, Chen Y, Holmes AL, Campbell JC. Design, fabrication, and characterizations of novel multispectral photodetectors using postgrowth fabry-perot optical filters for simultaneous near infrared/short-wave infrared detection Ieee Journal of Quantum Electronics. 50: 904-910. DOI: 10.1109/JQE.2014.2356133  0.88
2014 Xie X, Li K, Zhou Q, Beling A, Campbell JC. High-gain, low-noise-figure, and high-linearity analog photonic link based on a high-performance photodetector Journal of Lightwave Technology. 32: 3585-3590. DOI: 10.1109/JLT.2014.2350261  0.88
2014 Rouvalis E, Baynes FN, Xie X, Li K, Zhou Q, Quinlan F, Fortier TM, Diddams SA, Steffan AG, Beling A, Campbell JC. High-power and high-linearity photodetector modules for microwave photonic applications Journal of Lightwave Technology. 32: 3810-3816. DOI: 10.1109/JLT.2014.2310252  0.88
2014 Sun W, Maddox SJ, Bank SR, Campbell JC. Room temperature high-gain InAs/AlAsSb avalanche photodiode 2014 Ieee Photonics Conference, Ipc 2014. 350-351. DOI: 10.1109/IPCon.2014.6995392  0.88
2014 Campbell JC, Beling A, Xie X, Zhou Q, Li K. High-power, high-linearity photodiodes Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2014.6880522  0.88
2014 Rodak LE, Sampath AV, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. Enhancing the deep ultraviolet response of 4H-silicon carbide-based photodiodes between 210 nm and 255 nm Device Research Conference - Conference Digest, Drc. 95-96. DOI: 10.1109/DRC.2014.6872314  0.88
2014 Sun W, Maddox SJ, Bank SR, Campbell JC. Record high gain from InAs avalanche photodiodes at room temperature Device Research Conference - Conference Digest, Drc. 47-48. DOI: 10.1109/DRC.2014.6872293  0.88
2014 Li K, Li L, Khlyabich PP, Burkhart B, Sun W, Lu Z, Thompson BC, Campbell JC. Breakdown mechanisms and reverse current-voltage characteristics of organic bulk heterojunction solar cells and photodetectors Journal of Applied Physics. 115. DOI: 10.1063/1.4883501  0.88
2014 Li L, Shen Y, Campbell JC. The impact of thermal annealing temperature on the low-frequency noise characteristics of P3HT:PCBM bulk heterojunction organic solar cells Solar Energy Materials and Solar Cells. 130: 151-155. DOI: 10.1016/j.solmat.2014.07.009  0.88
2014 Rodak LE, Sampath AV, Gallinat CS, Smith J, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 782-785. DOI: 10.1002/pssc.201300684  0.88
2014 Li K, Zhou Q, Xie X, Beling A, Campbell JC. High power 20GHz photodiodes with microwave tuning circuits Optics Infobase Conference Papers 0.88
2014 Quinlan F, Baynes FN, Fortier TM, Zhou Q, Cross A, Campbell JC, Diddams SA. Impact of optical amplification and pulse interleaving in low phase noise photonic microwave generation Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.52
2014 Beling A, Li K, Xie X, Campbell JC. High-power integrated photodetectors for microwave photonics applications Optics Infobase Conference Papers 0.88
2014 Xie X, Zhou Q, Li K, Beling A, Campbell JC. High performance analog photonic link based on modified uni-traveling-carrier photodiode Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.52
2014 Li K, Zhou Q, Xie X, Beling A, Campbell JC. High power 20GHz photodiodes with microwave tuning circuits Optics Infobase Conference Papers 0.88
2014 Quinlan F, Baynes FN, Fortier TM, Zhou Q, Cross A, Campbell JC, Diddams SA. Impact of optical amplification and pulse interleaving in low phase noise photonic microwave generation Optics Infobase Conference Papers 0.88
2014 Xie X, Zhou Q, Li K, Beling A, Campbell JC. High performance analog photonic link based on modified uni-traveling-carrier photodiode Optics Infobase Conference Papers 0.88
2013 Beling A, Cross AS, Piels M, Peters J, Zhou Q, Bowers JE, Campbell JC. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation. Optics Express. 21: 25901-6. PMID 24216816  0.56
2013 Cross AS, Zhou Q, Beling A, Fu Y, Campbell JC. High-power flip-chip mounted photodiode array. Optics Express. 21: 9967-73. PMID 23609702 DOI: 10.1364/OE.21.009967  0.88
2013 Beling A, Cross AS, Piels M, Peters J, Zhou Q, Bowers JE, Campbell JC. InP-based waveguide photodiodes heterogeneously integrated on silicon-oninsulator for photonic microwave generation Optics Express. 21: 25901-25906. DOI: 10.1364/OE.21.025901  0.88
2013 Lu Z, Sun W, Campbell JC, Jiang X, Itzler MA. InGaAs/InP single photon avalanche diodes Ecs Transactions. 45: 37-43. DOI: 10.1149/04533.0037ecst  0.88
2013 Hammig MD, Chen XJ, Campbell JC, Kang T, Sun W, Johnson EB, Lee K, Christian JF. Development of Al0.8Ga0.2as photodiodes for use in wide band-gap solid-state photomultipliers Ieee Transactions On Nuclear Science. 60: 1175-1181. DOI: 10.1109/TNS.2012.2228503  0.88
2013 Baynes FN, Quinlan F, Fortier TM, Beling A, Zhou Q, Cross A, Campbell JC, Diddams SA. Optical frequency division for ultralow phase noise microwave generation 2013 Ieee International Topical Meeting On Microwave Photonics, Mwp 2013. 333-335. DOI: 10.1109/MWP.2013.6724089  0.88
2013 Rouvalis E, Zhou Q, Beling A, Cross AS, Steffan AG, Campbell JC. High-power and high-linearity photodetector module based on a modified uni-traveling carrier photodiode 2013 Ieee International Topical Meeting On Microwave Photonics, Mwp 2013. 13-16. DOI: 10.1109/MWP.2013.6724007  0.88
2013 Zhou Q, Cross AS, Beling A, Fu Y, Lu Z, Campbell JC. High-power V-band InGaAs/InP photodiodes Ieee Photonics Technology Letters. 25: 907-909. DOI: 10.1109/LPT.2013.2253766  0.88
2013 Sun W, Lu Z, Zheng X, Campbell JC, Maddox SJ, Nair HP, Bank SR. High-Gain InAs avalanche photodiodes Ieee Journal of Quantum Electronics. 49: 154-161. DOI: 10.1109/JQE.2012.2233462  0.88
2013 Zhou Q, Cross AS, Fu Y, Beling A, Foley BM, Hopkins P, Campbell JC. Balanced InP/InGaAs photodiodes with 1.5-W output power Ieee Photonics Journal. 5. DOI: 10.1109/JPHOT.2013.2262672  0.88
2013 Quinlan F, Baynes FN, Fortier TM, Zhou Q, Cross A, Campbell JC, Diddams SA. Low noise microwave generation with Er:fiber laser optical frequency dividers 2013 Ieee Photonics Conference, Ipc 2013. 408-409. DOI: 10.1109/IPCon.2013.6656610  0.88
2013 Bank SR, Maddox SJ, Sun W, Lu Z, Nair HP, Campbell JC. Recent advances in InAs avalanche photodiodes 2013 Ieee Photonics Conference, Ipc 2013. 358-359. DOI: 10.1109/IPCon.2013.6656585  0.88
2013 Beling A, Cross AS, Zhou Q, Fu Y, Campbell JC. High-power flip-chip balanced photodetector with >40 GHz bandwidth 2013 Ieee Photonics Conference, Ipc 2013. 352-353. DOI: 10.1109/IPCon.2013.6656582  0.88
2013 Fortier TM, Quinlan F, Nelson CW, Hati A, Fu Y, Campbell JC, Diddams SA. Photonic microwave generation with high-power photodiodes 2013 Ieee Photonics Conference, Ipc 2013. 350-351. DOI: 10.1109/IPCon.2013.6656581  0.88
2013 Campbell JC, Beling A, Zhou Q, Cross A. High power and high linearity photodiodes for RF photonics 2013 Ieee Photonics Conference, Ipc 2013. 186-188. DOI: 10.1109/IPCon.2013.6656497  0.88
2013 Campbell JC. Single photon avalanche diodes Device Research Conference - Conference Digest, Drc. 185-186. DOI: 10.1109/DRC.2013.6633855  0.88
2013 Zhou Q, Cross AS, Fu Y, Beling A, Campbell JC. Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency 2013 Ieee Avionics, Fiber-Optics and Photonics Technology Conference, Avfop 2013. 65-66. DOI: 10.1109/AVFOP.2013.6661625  0.88
2013 Campbell JC, Beling A, Zhou Q, Cross A. High power and high linearity photodiodes for microwave photonic applications 2013 Ieee Avionics, Fiber-Optics and Photonics Technology Conference, Avfop 2013. 59-60. DOI: 10.1109/AVFOP.2013.6661622  0.88
2013 Beling A, Zhou Q, Sinsky JH, Cross AS, Gnauck A, Buhl L, Campbell JC. 30 GHz fully packaged modified uni-traveling carrier photodiodes for high-power applications 2013 Ieee Avionics, Fiber-Optics and Photonics Technology Conference, Avfop 2013. 9-10. DOI: 10.1109/AVFOP.2013.6661597  0.88
2013 Rodak LE, Sampath AV, Gallinat CS, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter Applied Physics Letters. 103. DOI: 10.1063/1.4818551  0.88
2013 Sampath AV, Rodak LE, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. High quantum efficiency deep ultraviolet 4HsiC photodetectors Electronics Letters. 49: 1629-1630. DOI: 10.1049/el.2013.2889  0.88
2013 Rouvalis E, Zhou Q, Beling A, Cross AS, Steffan AG, Campbell JC. A high-power and high-linearity photodetector module with 25 dBm RF output power at 10 GHz Iet Conference Publications. 2013: 429-431. DOI: 10.1049/cp.2013.1416  0.88
2013 Quinlan F, Fortier TM, Jiang H, Hati A, Nelson C, Fu Y, Campbell JC, Diddams SA. Exploiting shot noise correlations in the photodetection of ultrashort optical pulse trains Nature Photonics. 7: 290-293. DOI: 10.1038/nphoton.2013.33  0.88
2013 Li K, Khlyabich PP, Li L, Burkhart B, Thompson BC, Campbell JC. Influence of exciton diffusion and charge-transfer state dissociation efficiency on the short-circuit current densities in semi-random donor/acceptor polymer: Fullerene solar cells Journal of Physical Chemistry C. 117: 6940-6948. DOI: 10.1021/jp311930m  0.88
2013 Beling A, Campbell JC. Advances in Photodetectors and Optical Receivers Optical Fiber Telecommunications: Components and Subsystems: Sixth Edition. 5: 99-154. DOI: 10.1016/B978-0-12-396958-3.00003-2  0.88
2013 Zhou Q, Cross AS, Beling A, Campbell JC. High power balanced InGaAs/InP photodetector flip-chip bonded on diamond Optics Infobase Conference Papers 0.88
2013 Beling A, Cross AS, Piels M, Peters J, Fu Y, Zhou Q, Bowers JE, Campbell JC. High-power high-speed waveguide photodiodes and photodiode arrays heterogeneously integrated on silicon-on-insulator Optical Fiber Communication Conference, Ofc 2013. OM2J.1.  0.88
2013 Campbell JC. Recent advances in photodetectors: Ultraviolet to mid-wave infrared Cleo: Science and Innovations, Cleo_si 2013. CTh3L.1.  0.88
2013 Beling A, Cross AS, Piels M, Peters J, Fu Y, Zhou Q, Bowers JE, Campbell JC. High-power high-speed waveguide photodiodes and photodiode arrays heterogeneously integrated on siliconon-insulator 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, Ofc/Nfoec 2013 0.88
2013 Campbell JC. Recent advances in photodetectors: Ultraviolet to mid-wave infrared Cleo: Science and Innovations, Cleo_si 2013. CTh3L.1.  0.88
2012 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Woo R, Labios E, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Campbell J. 16 channel GHz low noise SWIR photoreceivers Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919434  0.88
2012 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, Lu Z, Zhou Q, Sun W, Campbell J. Development of low excess noise SWIR APDs Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919397  0.88
2012 Li K, Li L, Khlyabich PP, Burkhart B, Thompson BC, Campbell JC. Efficiency limitations in organic bulk heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 3035-3039. DOI: 10.1109/PVSC.2012.6318222  0.88
2012 Li L, Li K, Khlyabich PP, Burkhart B, Thompson BC, Campbell JC. Photocurrent transients in polymer-fullerene bulk heterojunction organic solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2756-2760. DOI: 10.1109/PVSC.2012.6318164  0.88
2012 Rodak LE, Sampath AV, Gallinat CS, Enck RW, Smith J, Shen H, Wraback M, Chen Y, Zhou Q, Campbell JC. Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410993  0.88
2012 Campbell JC, Sun W, Lu Z, Itzler MA, Jiang X. Common-mode cancellation in sinusoidal gating with balanced InGaAs/InP single photon avalanche diodes Ieee Journal of Quantum Electronics. 48: 1505-1511. DOI: 10.1109/JQE.2012.2223200  0.88
2012 Zhou Q, Cross A, Fu Y, Beling A, Campbell JC. High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes 2012 Ieee Photonics Conference, Ipc 2012. 306-307. DOI: 10.1109/IPCon.2012.6358614  0.88
2012 Sun W, Lu Z, Zheng X, Campbell JC, Maddox SJ, Nair HP, Bank SR. Charge-compensated high gain InAs avalanche photodiodes 2012 Ieee Photonics Conference, Ipc 2012. 169-170. DOI: 10.1109/IPCon.2012.6358544  0.88
2012 Quinlan F, Fortier TM, Jiang H, Hati A, Nelson C, Fu Y, Campbell J, Diddams SA. Shot noise correlations in the detection of ultrashort optical pulses 2012 Ieee Photonics Conference, Ipc 2012. 14-15. DOI: 10.1109/IPCon.2012.6358465  0.88
2012 Beling A, Piels M, Cross AS, Fu Y, Zhou Q, Peters J, Bowers JE, Campbell JC. High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 171-172. DOI: 10.1109/ICIPRM.2012.6403349  0.88
2012 Jiang H, Taylor J, Quinlan F, Fortier T, Diddams S, Fu Y, Li Z, Campbell JC. Photodetection noise reduction of a 10 GHz fiber-laser-based photonic microwave generator 2012 Ieee International Frequency Control Symposium, Ifcs 2012, Proceedings. 374-376. DOI: 10.1109/FCS.2012.6243659  0.88
2012 Maddox SJ, Sun W, Lu Z, Nair HP, Campbell JC, Bank SR. InAs avalanche photodiode with improved electric field uniformity Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2012.6256992  0.88
2012 Campbell JC, Beling A, Piels M, Fu Y, Cross A, Zhou Q, Peters J, Bowers JE, Li Z. High-power, high-linearity photodiodes for RF photonics Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 215-216. DOI: 10.1109/COMMAD.2012.6472437  0.88
2012 Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4773212  0.88
2012 Maddox SJ, Sun W, Lu Z, Nair HP, Campbell JC, Bank SR. Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping Applied Physics Letters. 101. DOI: 10.1063/1.4757424  0.88
2012 Sampath AV, Zhou QG, Enck RW, McIntosh D, Shen H, Campbell JC, Wraback M. P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Applied Physics Letters. 101. DOI: 10.1063/1.4748793  0.88
2012 Chen B, Zhou Q, McIntosh DC, Yuan J, Chen Y, Sun W, Campbell JC, Holmes AL. Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes Electronics Letters. 48: 1340-1341. DOI: 10.1049/el.2012.2849  0.88
2012 Beling A, Campbell JC. Photodetectors Springer Series in Optical Sciences. 161: 281-323. DOI: 10.1007/978-3-642-20517-0-7  0.88
2012 Beling A, Fu Y, Li Z, Pan H, Zhou Q, Cross A, Piels M, Peters J, Bowers JE, Campbell JC. Modified uni-traveling carrier photodiodes heterogeneously integrated on silicon-on-insulator (SOI) Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2012 0.88
2011 Li Z, Fu Y, Piels M, Pan H, Beling A, Bowers JE, Campbell JC. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode. Optics Express. 19: B385-90. PMID 22274046  0.56
2011 Zhou Q, McIntosh DC, Chen Y, Sun W, Li Z, Campbell JC. Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes. Optics Express. 19: 23664-70. PMID 22109392  0.8
2011 McIntosh D, Zhou Q, Chen Y, Campbell JC. High quantum efficiency GaP avalanche photodiodes. Optics Express. 19: 19607-12. PMID 21996902  0.52
2011 Li Z, Nayak BK, Iyengar VV, McIntosh D, Zhou Q, Gupta MC, Campbell JC. Laser-textured silicon photodiode with broadband spectral response. Applied Optics. 50: 2508-11. PMID 21673751  0.88
2011 Li K, Shen Y, Li J, Khlyabich P, Reifler ES, Thompson BC, Campbell JC. Thermal annealing effect on P3HT: PCBM free polarons lifetime and charge transport Materials Research Society Symposium Proceedings. 1322: 127-132. DOI: 10.1557/opl.2011.1301  0.88
2011 Shen H, Sampath AV, Zhou Q, Campbell J, Wraback M. Effect of interface polarization charge on GaN/SiC separate absorption and multiplication avalanche photodiodes Ecs Transactions. 41: 81-87. DOI: 10.1149/1.3629956  0.88
2011 Sampath AV, Enck RW, Shen H, Wraback M, Zhou Q, Mcintosh D, Campbell J. III-Nitride/SiC separate absorption and multiplication avalanche photodiodes: The importance of controlling polarization-induced interface charge International Journal of High Speed Electronics and Systems. 20: 487-496. DOI: 10.1142/S0129156411006775  0.88
2011 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Woo R, Labios E, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Campbell J. GHz low noise short wavelength infrared (SWIR) photoreceivers Proceedings of Spie - the International Society For Optical Engineering. 8037. DOI: 10.1117/12.884193  0.88
2011 Sampath AV, Zhou Q, Enck R, Gallinat CS, Rotella P, McIntosh D, Shen P, Campbell J, Wraback M. Impact of hetero-interface on the photoresponse of GAN/SIC separate absorption and multiplication avalanche photodiodes 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135205  0.88
2011 Zhou Q, McIntosh DC, Lu Z, Campbell JC, Sampath AV, Shen H, Wraback M. GaN/SiC avalanche photodiodes Applied Physics Letters. 99. DOI: 10.1063/1.3636412  0.88
2011 Shen Y, Li K, Majumdar N, Campbell JC, Gupta MC. Bulk and contact resistance in P3HT:PCBM heterojunction solar cells Solar Energy Materials and Solar Cells. 95: 2314-2317. DOI: 10.1016/j.solmat.2011.03.046  0.88
2010 Chan J, Burke B, Cabral M, Hu C, Campbell J, Harriott L, Williams KA. Transport in carbon nanotube field-effect transistors tuned using low energy electron beam exposure. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 334212. PMID 21386502 DOI: 10.1088/0953-8984/22/33/334212  0.56
2010 Li K, Liu HD, Zhou Q, McIntosh D, Campbell JC. SiC avalanche photodiode array with microlenses. Optics Express. 18: 11713-9. PMID 20589031  0.6
2010 Li K, Shen Y, Majumdar N, Hu C, Gupta MC, Campbell JC. Determination of free polaron lifetime in organic bulk heterojunction solar cells by transient time analysis Journal of Applied Physics. 108. DOI: 10.1063/1.3493114  0.88
2009 Pan H, Li Z, Beling A, Campbell JC. Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber. Optics Express. 17: 20221-6. PMID 19997246  0.56
2009 Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Optics Express. 17: 12641-9. PMID 19654668  0.4
2008 Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection. Optics Express. 16: 9365-71. PMID 18575500 DOI: 10.1364/OE.16.009365  0.6
2007 Campbell JC, Madhukar A. Quantum-dot infrared photodetectors Proceedings of the Ieee. 95: 1815-1827. DOI: 10.1109/JPROC.2007.900967  0.88
2006 Ren X, Huang H, Huang Y, Wang X, Wang Q, Wang W, Miao A, Li Y, Cui H, Ye P, Campbell JC. Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure Proceedings of Spie - the International Society For Optical Engineering. 6352. DOI: 10.1117/12.692714  0.88
2006 Beck AL, Guo X, Liu HD, Ghatak-roy A, Campbell JC. Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325nm Proceedings of Spie - the International Society For Optical Engineering. 6372. DOI: 10.1117/12.685417  0.88
2006 Beck J, Wan C, Kinch M, Robinson J, Mitra P, Scritchfield R, Ma F, Campbell J. The HgCdTe electron avalanche photodiode Leos Summer Topical Meeting. 36-37. DOI: 10.1117/12.565142  0.88
2006 Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384  0.88
2006 Sidhu R, Zhang L, Tan N, Duan N, Campbell JC, Holmes AL, Hsu CF, Itzler MA. 2.4 μm cutoff wavelength avalanche photodiode on InP substrate Electronics Letters. 42: 71-72. DOI: 10.1049/el:20063415  0.88
2006 Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure Physica Status Solidi C: Conferences. 3: 439-443. DOI: 10.1002/pssc.200564162  0.88
2005 Ma F, Wang S, Campbell JC. Shot noise suppression in avalanche photodiodes. Physical Review Letters. 95: 176604. PMID 16383852 DOI: 10.1103/PhysRevLett.95.176604  0.72
2005 Annamalai S, Dowd P, Forman D, Varangis P, Tumolillo T, Gray A, Sun K, Liu M, Campbell J, Carothers D, Krishna S. Two-color infrared Focal Plane Array on InAs/InGaAs/GaAs quantum dots in a well detectors design Proceedings of Spie - the International Society For Optical Engineering. 5897: 1-4. DOI: 10.1117/12.617775  0.88
2005 Campbell JC, Huang Z, Kong N, Oh J. Si and Si-compatible photodetectors 2005 Ieee International Conference On Group Iv Photonics. 2005: 183-185. DOI: 10.1109/GROUP4.2005.1516446  0.88
2005 Liu M, Wang S, Campbell JC, Beck JD, Wan CF, Kinch MA. Study of diffusion length in two-dimensional HgCdTe avalanche photodiodes by optical beam induced current Journal of Applied Physics. 98. DOI: 10.1063/1.2060948  0.88
2005 Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1924887  0.88
2005 Karve G, Wang S, Ma F, Li X, Campbell JC, Ispasoiu RG, Bethune DS, Risk WP, Kinsey GS, Boisvert JC, Isshiki TD, Sudharsanan R. Origin of dark counts in In 0.53 Ga 0.47As/In 0.52Al 0.48As avalanche photodiodes operated in Geiger mode Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861498  0.88
2004 Boisvert J, Masalykin A, Kinsey GS, Isshiki T, Haddad M, Sudharsanan R, Zheng X, Campbell JC. Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications Proceedings of Spie - the International Society For Optical Engineering. 5406: 13-20. DOI: 10.1117/12.541541  0.88
2004 Kim ET, Madhukar A, Ye Z, Campbell JC. High detectivity InAs quantum dot infrared photodetectors Applied Physics Letters. 84: 3277-3279. DOI: 10.1063/1.1719259  0.88
2004 Huntington AS, Wang CS, Zheng XG, Campbell JC, Coldren LA. Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP Journal of Crystal Growth. 267: 458-465. DOI: 10.1016/j.jcrysgro.2004.04.041  0.88
2004 Li N, Sidhu R, Li X, Ma F, Demiguel S, Zhen X, Holmes AL, Campbell JC, Tulchinsky DA, Williams KJ. High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode Physica Status Solidi (a) Applied Research. 201: 3037-3041. DOI: 10.1002/pssa.200406847  0.88
2003 Campbell JC, Wang S, Zheng X, Li X, Li N, Ma F, Sun X, Collins CJ, Beck AL, Yang B, Hurst JB, Sidhu R, Holmes AL, Chowdhury U, Wong MM, et al. Photodetectors: UV to IR Proceedings of Spie - the International Society For Optical Engineering. 5246: 375-388. DOI: 10.1117/12.511201  0.88
2003 Csutak SM, Schaub JD, Yang B, Campbell JC. High-speed short wavelength silicon photodetectors fabricated in 130nm CMOS process Proceedings of Spie - the International Society For Optical Engineering. 4997: 135-145. DOI: 10.1117/12.479474  0.88
2003 Karve G, Zheng X, Zhang X, Li X, Li N, Wang S, Ma F, Holmes A, Campbell JC, Kinsey GS, Boisvert JC, Isshiki TD, Sudharsanan R, Bethune DS, Risk WP. Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode Ieee Journal of Quantum Electronics. 39: 1281-1286. DOI: 10.1109/JQE.2003.817244  0.88
2003 Wang S, Ma F, Li X, Sidhu R, Zheng X, Sun X, Holmes AL, Campbell JC. Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region Ieee Journal of Quantum Electronics. 39: 375-378. DOI: 10.1109/JQE.2002.807183  0.88
2003 Ma F, Li X, Campbell JC, Beck JD, Wan CF, Kinch MA. Monte Carlo simulations of Hg0.7Cd0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise Applied Physics Letters. 83: 785-787. DOI: 10.1063/1.1596727  0.88
2003 Wraback M, Shen H, Rudin S, Bellotti E, Goano M, Carrano JC, Collins CJ, Campbell JC, Dupuis RD. Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN Applied Physics Letters. 82: 3674-3676. DOI: 10.1063/1.1577833  0.88
2003 Li N, Sidhu R, Li X, Ma F, Zheng X, Wang S, Karve G, Demiguel S, Holmes AL, Campbell JC. InGaAs/InAlAs avalanche photodiode with undepleted absorber Applied Physics Letters. 82: 2175-2177. DOI: 10.1063/1.1559437  0.88
2003 Sun X, Wang S, Zheng XG, Li X, Campbell JC, Holmes AL. 1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise Journal of Applied Physics. 93: 774-776. DOI: 10.1063/1.1526933  0.88
2003 Csutak SM, Schaub JD, Wang S, Mogab J, Campbell JC. Integrated silicon optical receiver with avalanche photodiode Iee Proceedings: Optoelectronics. 150: 235-237. DOI: 10.1049/ip-opt:20030391  0.88
2003 Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD. High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555. DOI: 10.1016/S0022-0248(02)01877-8  0.88
2002 Kinsey GS, Sidhu R, Holmes AL, Campbell JC. Improved optical coupling in waveguide photodetectors incorporating a wedge-shaped input facet. Optics Letters. 27: 749-50. PMID 18007920  0.88
2002 Wang S, Sidhu R, Karve G, Ma F, Li X, Zheng XG, Hurst JB, Sun X, Li N, Holmes AL, Campbell JC. A study of low-bias photocurrent gradient of avalanche photodiodes Ieee Transactions On Electron Devices. 49: 2107-2113. DOI: 10.1109/TED.2002.805233  0.88
2002 Sun X, Wang S, Hsu JS, Sidhu R, Zheng XG, Li X, Campbell JC, Holmes AL. GaAsSb: A novel material for near infrared photodetectors on GaAs substrates Ieee Journal On Selected Topics in Quantum Electronics. 8: 817-822. DOI: 10.1109/JSTQE.2002.800848  0.88
2002 Zheng XG, Hsu JS, Sun X, Hurst JB, Li X, Wang S, Holmes AL, Campbell JC, Huntington AS, Coldren LA. A 12 × 12 In 0.53Ga 0.47 As-In 0.52Al 0.48 As avalanche photodiode array Ieee Journal of Quantum Electronics. 38: 1536-1540. DOI: 10.1109/JQE.2002.804297  0.88
2002 Csutak SM, Schaub JD, Wu WE, Shimer R, Campbell JC. High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology Journal of Lightwave Technology. 20: 1724-1729. DOI: 10.1109/JLT.2002.802221  0.88
2002 Campbell JC, Wang S, Zheng X, Li X, Li N, Ma F, Sun X, Hurst JB, Sidhu R, Holmes AL, Huntington A, Coldren LA. Recent developments in avalanche photodiodes Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 53-57. DOI: 10.1109/COMMAD.2002.1237187  0.44
2002 Csutak SM, Dakshina-Murthy S, Campbell JC. CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates Ieee Journal of Quantum Electronics. 38: 477-480. DOI: 10.1109/3.998619  0.88
2002 Csutak SM, Schaub JD, Wu WE, Shimer R, Campbell JC. CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates Ieee Journal of Quantum Electronics. 38: 193-196. DOI: 10.1109/3.980272  0.88
2002 Ma F, Karve G, Zheng X, Sun X, Holmes AL, Campbell JC. Low-temperature breakdown properties of AlxGa1-xAs avalanche photodiodes Applied Physics Letters. 81: 1908-1910. DOI: 10.1063/1.1506012  0.88
2002 Ma F, Wang S, Li X, Anselm KA, Zheng XG, Holmes AL, Campbell JC. Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions Journal of Applied Physics. 92: 4791-4795. DOI: 10.1063/1.1505987  0.88
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode Applied Physics Letters. 80: 3754-3756. DOI: 10.1063/1.1480484  0.88
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes Electronics Letters. 38: 824-826. DOI: 10.1049/el:20020526  0.88
2001 Campbell JC, Wang S, Zheng XG, Kinsey GS, Holmes A.L. J, Sun X, Sidhu R, Yuan P. Ultra-low-noise avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 4283: 480-488. DOI: 10.1117/12.432598  0.88
2001 Wraback M, Shen H, Wood MC, Carrano JC, Collins CJ, Li T, Campbell JC, Eiting CJ, Lambert DJH, Chowdhury U, Wong MM, Dupuis RD, Schurman MJ, Ferguson IA. Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques Proceedings of Spie - the International Society For Optical Engineering. 4280: 36-44. DOI: 10.1117/12.424741  0.56
2001 Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A. Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1400-1403. DOI: 10.1116/1.1379792  0.88
2001 Schaub JD, Li R, Csutak SM, Campbell JC. High-speed monolithic silicon photoreceivers on high resistivity and SOI substrates Journal of Lightwave Technology. 19: 272-278. DOI: 10.1109/50.917902  0.88
2001 Li T, Lambert DJH, Wong MM, Collins CJ, Yang B, Beck AL, Chowdhury U, Dupuis RD, Campbell JC. Low-noise back-illuminated AlxGa1-xN-based p-i-n solar-blind ultraviolet photodetectors Ieee Journal of Quantum Electronics. 37: 538-545. DOI: 10.1109/3.914403  0.88
2001 Saleh MA, Hayat MM, Sotirelis PP, Holmes AL, Campbell JC, Saleh BEA, Teich MC. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes Ieee Transactions On Electron Devices. 48: 2722-2731. DOI: 10.1109/16.974696  0.88
2001 Saleh MA, Hayat MM, Kwon OH, Holmes AL, Campbell JC, Saleh BEA, Teich MC. Breakdown voltage in thin III-V avalanche photodiodes Applied Physics Letters. 79: 4037-4039. DOI: 10.1063/1.1425463  0.88
2001 Wraback M, Shen H, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN Applied Physics Letters. 79: 1303-1305. DOI: 10.1063/1.1398318  0.88
2001 Kuryatkov VV, Temkin H, Campbell JC, Dupuis RD. Low-noise photodetectors based on heterojunctions of AlGaN-GaN Applied Physics Letters. 78: 3340-3342. DOI: 10.1063/1.1351852  0.88
2001 Zheng XG, Sun X, Wang S, Yuan P, Kinsey GS, Holmes AL, Streetman BG, Campbell JC. Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region Applied Physics Letters. 78: 3833-3835. DOI: 10.1063/1.1343851  0.88
2001 Wong MM, Chowdhury U, Collins CJ, Yang B, Denyszyn JC, Kim KS, Campbell JC, Dopuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 333-336. DOI: 10.1002/1521-396X(200111)188:1<333::AID-PSSA333>3.0.CO;2-X  0.88
2001 Campbell JC, Collins CJ, Wong MM, Chowdhury U, Beck AL, Dupuis RD. High Quantum Efficiency at Low Bias AlxGa1-xN p-i-n Photodiodes Physica Status Solidi (a) Applied Research. 188: 283-287. DOI: 10.1002/1521-396X(200111)188:1<283::AID-PSSA283>3.0.CO;2-H  0.88
2001 Wraback M, Shen H, Bellotti E, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Band structure effects on the transient electron velocity overshoot in GaN Physica Status Solidi (B) Basic Research. 228: 585-588. DOI: 10.1002/1521-3951(200111)228:2<585::AID-PSSB585>3.0.CO;2-Z  0.88
2000 Campbell JC, Li T, Wang S, Beck AL, Collins CJ, Yang B, Lambert DJH, Dupuis RD, Carrano JC, Schurman MJ, Ferguson IT. AlGaN/GaN ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 4134: 124-132. DOI: 10.1117/12.405335  0.88
2000 Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Electronics Letters. 36: 1581-1583. DOI: 10.1049/el:20001110  0.88
1999 Schow CL, Li R, Schaub JD, Campbell JC. Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates Ieee Journal of Quantum Electronics. 35: 1478-1482. DOI: 10.1109/3.792572  0.88
1999 Yuan P, Anselm KA, Hu C, Nie H, Lenox C, Holmes AL, Streetman BG, Campbell JC, Mclntyre RJ. A new look at impact lonization-part II: Gain and noise in short avalanche photodiodes Ieee Transactions On Electron Devices. 46: 1632-1639. DOI: 10.1109/16.777151  0.88
1998 Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260  0.88
1998 Schow CL, Schaub JD, Li R, Qi J, Campbell JC. A 1-Gb/s monolithically integrated silicon NMOS optical receiver Ieee Journal On Selected Topics in Quantum Electronics. 4: 1035-1039. DOI: 10.1109/2944.736109  0.88
1998 Lenox C, Nie H, Kinsey G, Yuan P, Holmes AL, Streetman BG, Campbell JC. Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors Applied Physics Letters. 73: 3405-3407. DOI: 10.1063/1.122757  0.88
1998 Lenox C, Yuan P, Nie H, Baklenov O, Hansing C, Campbell JC, Holmes AL, Streetman BG. Thin multiplication region InAlAs homojunction avalanche photodiodes Applied Physics Letters. 73: 783-784. DOI: 10.1063/1.122000  0.88
1995 Anselm KA, Murtaza SS, Campbell JC, Streetman BG. Four-wavelength Bragg mirror using GaAs/AlAs. Optics Letters. 20: 178-9. PMID 19859126 DOI: 10.1364/OL.20.000178  0.68
1995 Murtaza SS, Anselm KA, Srinivasan A, Streetman BG, Campbell JC, Bean JC, Peticolas L. High-Reflectivity Bragg Mirrors for Optoelectronic Applications Ieee Journal of Quantum Electronics. 31: 1819-1825. DOI: 10.1109/3.466057  0.88
1994 Sarathy J, Mayer RA, Jung K, Unnikrishnan S, Kwong DL, Campbell JC. Normal-incidence grating couplers in Ge-Si. Optics Letters. 19: 798-800. PMID 19844449 DOI: 10.1364/OL.19.000798  0.32
1994 Murtaza SS, Campbell JC, Bean JC, Peticolas LJ. Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm Applied Physics Letters. 65: 795-797. DOI: 10.1063/1.112232  0.88
1993 Lee WD, Heuring JJ, Campbell JC, Buell WF, Davis CL. High-resolution line-Q measurements of velocity-selective nonlinear Faraday rotation in Rb vapor Applied Physics Letters. 63: 1026-1028. DOI: 10.1063/1.109823  0.88
1993 Murtaza SS, Qian R, Kinosky D, Mayer R, Tasch AF, Banerjee S, Campbell JC. Room-temperature measurements of strong electroabsorption effect in Ge xSi1-x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 62: 1976-1978. DOI: 10.1063/1.109508  0.88
1992 Mayer RA, Jung KH, Lee WD, Kwong DL, Campbell JC. Thin-film thermo-optic GexSi1–x Mach–Zehnder interferometer Optics Letters. 17: 1812-1814. DOI: 10.1364/OL.17.001812  0.32
1992 Lee WD, Campbell JC. Narrow-linewidth frequency stabilized AlxGa1-xAs/GaAs laser Applied Physics Letters. 60: 1544-1546. DOI: 10.1063/1.107245  0.88
1992 Tsai C, Li KH, Kinosky DS, Qian RZ, Hsu TC, Irby JT, Banerjee SK, Tasch AF, Campbell JC, Hance BK, White JM. Correlation between silicon hydride species and the photoluminescence intensity of porous silicon Applied Physics Letters. 60: 1700-1702. DOI: 10.1063/1.107190  0.88
1992 Campbell JC, Tsai C, Li KH, Sarathy J, Sharps PR, Timmons ML, Venkatasubramanian R, Hutchby JA. Photoluminescence of porous silicon buried underneath epitaxial GaP Applied Physics Letters. 60: 889-891. DOI: 10.1063/1.106495  0.88
1991 Lee WD, Campbell JC. Optically stabilized AlxGa1-xAs/GaAs laser using magnetically induced birefringence in Rb vapor Applied Physics Letters. 58: 995-997. DOI: 10.1063/1.105214  0.88
1991 Subramanian G, Dodabalapur A, Campbell JC, Streetman BG. AlxGa1-xAs/GaAs photovoltaic cell with epitaxial isolation layer Applied Physics Letters. 58: 2514-2516. DOI: 10.1063/1.104861  0.88
1990 Lee WD, Campbell JC, Brecha RJ, Kimble HJ. Frequency stabilization of an external-cavity diode laser Applied Physics Letters. 57: 2181-2183. DOI: 10.1063/1.103928  0.88
1982 Campbell JC, Qua GJ, Copeland JA, Dentai AG. LIGHT-ACTIVATED ELECTROLUMINESCENT SWITCH WITH AN ACTIVE FEEDBACK CIRCUIT. Journal of Applied Physics. 53: 5182-5185. DOI: 10.1063/1.331396  0.88
1982 Conway KL, Dentai AG, Campbell JC. Etch rates for two material selective etches in the InGaAsP/InP system Journal of Applied Physics. 53: 1836-1838. DOI: 10.1063/1.330603  0.88
1981 Copeland JA, Campbell JC, Dentai AG, Miller SE. Wavelength-multiplexed and gate: A building block for monolithic optically coupled circuits Applied Physics Letters. 39: 197-199. DOI: 10.1063/1.92701  0.88
1980 Campbell JC, Abbott SM, Dentai AG. A comparison of "normal" lasers and lasers exhibiting light jumps Journal of Applied Physics. 51: 4010-4013. DOI: 10.1063/1.328223  0.88
1979 Lau KY, Campbell JC, Stone J. Magnetooptic bounce-cavity modulator. Applied Optics. 18: 3143-7. PMID 20212819 DOI: 10.1364/AO.18.003143  0.88
1978 Campbell JC, Dewinter JC, Pollack MA, Nahory RE. Buried heterojunction electroabsorption modulator Applied Physics Letters. 32: 471-473. DOI: 10.1063/1.90089  0.88
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