Sanjay K. Banerjee - Publications

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

428 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Sarkar S, Bhattacharya S, Alam MJ, Yadav R, Banerjee SK. Hypoxia aggravates non-alcoholic fatty liver disease in presence of high fat choline deficient diet: A pilot study. Life Sciences. 118404. PMID 32920003 DOI: 10.1016/j.lfs.2020.118404  0.6
2020 Chi W, Banerjee SK. Progress in Materials Development for the Rapid Efficiency Advancement of Perovskite Solar Cells. Small (Weinheim An Der Bergstrasse, Germany). e1907531. PMID 32452645 DOI: 10.1002/Smll.201907531  0.6
2020 Jadaun P, Register LF, Banerjee SK. Rational design principles for giant spin Hall effect in -transition metal oxides. Proceedings of the National Academy of Sciences of the United States of America. PMID 32424094 DOI: 10.1073/Pnas.1922556117  0.92
2020 Zhou Y, Maity N, Rai A, Juneja R, Meng X, Roy A, Zhang Y, Xu X, Lin JF, Banerjee SK, Singh AK, Wang Y. Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS. Advanced Materials (Deerfield Beach, Fla.). e1908311. PMID 32329148 DOI: 10.1002/Adma.201908311  1
2020 Chowdhury S, Roy A, Bodemann I, Banerjee SK. 2D to 3D Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic and Compact Morphologies. Acs Applied Materials & Interfaces. PMID 32148024 DOI: 10.1021/Acsami.9B23286  1
2020 Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Erratum: “Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides” [J. Vac. Sci. Technol. B 37, 041206 (2019)] Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 37001. DOI: 10.1116/6.0000202  0.6
2020 Prasad N, Pramanik T, Banerjee SK, Register LF. Realizing both short- and long-term memory within a single magnetic tunnel junction based synapse Journal of Applied Physics. 127: 93904. DOI: 10.1063/1.5142418  1
2020 Koh D, Banerjee SK, Brockman J, Kuhn M, King SW. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces Diamond and Related Materials. 101: 107647. DOI: 10.1016/J.Diamond.2019.107647  0.6
2020 Zhuang P, Lin W, Ahn J, Catalano M, Chou H, Roy A, Quevedo‐Lopez M, Colombo L, Cai W, Banerjee SK. Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories Advanced Electronic Materials. 6: 1900979. DOI: 10.1002/Aelm.201900979  1
2019 Park JH, Rai A, Hwang J, Zhang C, Kwak I, Wolf SF, Vishwanath S, Liu X, Dobrowolska M, Furdyna J, Xing HG, Cho K, Banerjee SK, Kummel AC. Band Structure Engineering of Layered WSe via One-Step Chemical Functionalization. Acs Nano. PMID 31260257 DOI: 10.1021/Acsnano.8B09351  1
2019 Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez DA, Quan J, Singh A, Embley J, Zepeda A, Campbell M, Autry T, Taniguchi T, ... ... Banerjee SK, et al. Evidence for moiré excitons in van der Waals heterostructures. Nature. PMID 30804527 DOI: 10.1038/S41586-019-0975-Z  1
2019 Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS/WSe Heterostructure Transistors. Nano Letters. PMID 30779591 DOI: 10.1021/Acs.Nanolett.8B05159  1
2019 Wu X, Ge R, Chen PA, Chou H, Zhang Z, Zhang Y, Banerjee S, Chiang MH, Lee JC, Akinwande D. Thinnest Nonvolatile Memory Based on Monolayer h-BN. Advanced Materials (Deerfield Beach, Fla.). e1806790. PMID 30773734 DOI: 10.1002/Adma.201806790  0.88
2019 Koh D, Banerjee SK, Locke C, Saddow SE, Brockman J, Kuhn M, King SW. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 37: 41206. DOI: 10.1116/1.5111049  0.6
2019 Wu X, Mou X, Register LF, Banerjee SK. Simulation of exciton condensate-mediated quantum transport in a double-monolayer transition metal dichalcogenide system Physical Review B. 99. DOI: 10.1103/Physrevb.99.035113  1
2019 Dey R, Register LF, Banerjee SK. Theory of spin detection on the surface of diffusive topological insulators by means of ferromagnets: Establishing Onsager reciprocity and the importance of tunnel contact Physical Review B. 100: 94419. DOI: 10.1103/Physrevb.100.094419  0.92
2018 Chou H, Majumder S, Roy A, Catalano M, Zhuang P, Quevedo-López MA, Colombo L, Banerjee SK. Dependence of h-BN film thickness as grown on nickel single crystal substrates of different orientation. Acs Applied Materials & Interfaces. PMID 30489058 DOI: 10.1021/Acsami.8B16816  1
2018 Zhuang P, Lin W, Chou H, Roy A, Cai W, Banerjee SK. Growth of lateral graphene/h-BN heterostructure on copper foils by chemical vapor deposition. Nanotechnology. 30: 03LT01. PMID 30418941 DOI: 10.1088/1361-6528/Aaeb75  1
2018 Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703  1
2018 Pramanik T, Roy U, Jadaun P, Register LF, Banerjee SK. Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations Journal of Magnetism and Magnetic Materials. 467: 96-107. DOI: 10.1016/J.Jmmm.2018.07.042  0.92
2017 Chen K, Roy A, Rai A, Valsaraj A, Meng X, He F, Xu X, Register LF, Banerjee S, Wang Y. Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide. Acs Applied Materials & Interfaces. PMID 29226670 DOI: 10.1021/Acsami.7B15478  1
2017 Park JH, Sanne A, Guo Y, Amani M, Zhang K, Movva HCP, Robinson JA, Javey A, Robertson J, Banerjee SK, Kummel AC. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Science Advances. 3: e1701661. PMID 29062892 DOI: 10.1126/Sciadv.1701661  1
2017 Brennan CJ, Ghosh R, Koul K, Banerjee SK, Lu N, Yu ET. Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy. Nano Letters. PMID 28763615 DOI: 10.1021/Acs.Nanolett.7B02123  0.56
2017 Majumder S, Jarvis K, Banerjee SK, Kavanagh KL. Interfacial reactions at Fe/topological insulator spin contacts. Journal of Vacuum Science and Technology. B, Nanotechnology & Microelectronics : Materials, Processing, Measurement, & Phenomena : Jvst B. 35: 04F105. PMID 28713648 DOI: 10.1116/1.4991331  0.4
2017 Trivedi T, Roy A, Movva HCP, Walker ES, Bank SR, Neikirk DP, Banerjee SK. Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators. Acs Nano. PMID 28692797 DOI: 10.1021/Acsnano.7B03894  1
2017 Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701  1
2017 Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306  1
2017 Hsu W, Wen F, Wang X, Wang Y, Dolocan A, Roy A, Kim T, Tutuc E, Banerjee SK. Laser Spike Annealing for Shallow Junctions in Ge CMOS Ieee Transactions On Electron Devices. 64: 346-352. DOI: 10.1109/Ted.2016.2635625  1
2017 Dey R, Roy A, Pramanik T, Rai A, Shin SH, Majumder S, Register LF, Banerjee SK. Detection of current induced spin polarization in epitaxial Bi2Te3 thin film Applied Physics Letters. 110: 122403. DOI: 10.1063/1.4978691  1
2016 Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255  1
2016 Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646  1
2016 Hawa Z, Haque I, Ghosh A, Banerjee S, Harris L, Banerjee SK. The miRacle in Pancreatic Cancer by miRNAs: Tiny Angels or Devils in Disease Progression. International Journal of Molecular Sciences. 17. PMID 27240340 DOI: 10.3390/ijms17060809  0.36
2016 Banerjee SK, Kumar M, Alokam R, Sharma AK, Chatterjee A, Kumar R, Sahu SK, Jana K, Singh R, Yogeeswari P, Sriram D, Basu J, Kundu M. Targeting multiple response regulators of Mycobacterium tuberculosis augments the host immune response to infection. Scientific Reports. 6: 25851. PMID 27181265 DOI: 10.1038/srep25851  0.6
2016 Ronholm J, Lau F, Banerjee SK. Emerging Seafood Preservation Techniques to Extend Freshness and Minimize Vibrio Contamination. Frontiers in Microbiology. 7: 350. PMID 27047466 DOI: 10.3389/fmicb.2016.00350  0.32
2016 Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601  1
2016 Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. PMID 26939890 DOI: 10.1021/Acsami.6B00961  1
2016 McCreary A, Ghosh R, Amani M, Wang J, Duerloo KN, Sharma A, Jarvis K, Reed EJ, Dongare A, Banerjee SK, Terrones M, Namburu RR, Dubey M. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport. Acs Nano. PMID 26881920 DOI: 10.1021/Acsnano.5B04550  1
2016 Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263  1
2016 Ghosh R, Kim JS, Roy A, Chou H, Vu M, Banerjee SK, Akinwande D. Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2 Journal of Materials Research. 31: 917-922. DOI: 10.1557/Jmr.2016.7  1
2016 Majumder S, Guchhait S, Dey R, Register LF, Banerjee SK. Large magnetoresistance at room temperature in ferromagnet/Topological insulator contacts Ieee Transactions On Nanotechnology. 15: 671-674. DOI: 10.1109/Tnano.2016.2572003  1
2016 Valsaraj A, Register LF, Banerjee SK, Chang J. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 230-233. DOI: 10.1109/SISPAD.2015.7292301  0.4
2016 Hsu W, Wang X, Wen F, Wang Y, Dolocan A, Kim T, Tutuc E, Banerjee SK. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing Ieee Electron Device Letters. 37: 1088-1091. DOI: 10.1109/Led.2016.2587829  1
2016 Hsu W, Kim T, Chou H, Rai A, Banerjee SK. Novel BF+ Implantation for High Performance Ge pMOSFETs Ieee Electron Device Letters. 37: 954-957. DOI: 10.1109/Led.2016.2578327  1
2016 Crum DM, Valsaraj A, David JK, Register LF, Banerjee SK. Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations Journal of Applied Physics. 120: 224301. DOI: 10.1063/1.4970913  0.92
2016 Hsu W, Kim T, Benítez-Lara A, Chou H, Dolocan A, Rai A, Josefina Arellano-Jiménez M, Palard M, José-Yacamán M, Banerjee SK. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F Journal of Applied Physics. 120. DOI: 10.1063/1.4955312  1
2016 Corbet CM, Sonde SS, Tutuc E, Banerjee SK. Improved contact resistance in ReSe2 thin film field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4947468  1
2016 Ahn J, Chou H, Koh D, Kim T, Roy A, Song J, Banerjee SK. Nanoscale doping of compound semiconductors by solid phase dopant diffusion Applied Physics Letters. 108. DOI: 10.1063/1.4944888  1
2016 Trivedi T, Sonde S, Movva HCP, Banerjee SK. Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators Journal of Applied Physics. 119. DOI: 10.1063/1.4941265  1
2016 Kim TW, Kim JS, Kim DK, Shin SH, Park WS, Banerjee S, Kim DH. High-frequency characteristics of Lg = 60 nm InGaAs MOS high-electron-mobilitytransistor (MOS-HEMT) with Al2O3 gate insulator Electronics Letters. 52: 870-872. DOI: 10.1049/El.2015.3573  1
2016 Son SW, Park JH, Baek JM, Kim JS, Kim DK, Shin SH, Banerjee SK, Lee JH, Kim TW, Kim DH. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack Solid-State Electronics. 123: 63-67. DOI: 10.1016/J.Sse.2016.06.003  1
2016 Bhatti AA, Hsieh CC, Roy A, Register LF, Banerjee SK. First-principles simulation of oxygen vacancy migration in HfO x , CeO x , and at their interfaces for applications in resistive random-access memories Journal of Computational Electronics. 15: 741-748. DOI: 10.1007/S10825-016-0847-9  1
2015 Chang HY, Yogeesh MN, Ghosh R, Rai A, Sanne A, Yang S, Lu N, Banerjee SK, Akinwande D. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime. Advanced Materials (Deerfield Beach, Fla.). PMID 26707841 DOI: 10.1002/Adma.201504309  1
2015 Park JH, Movva HC, Chagarov E, Sardashti K, Chou H, Kwak I, Hu KT, Fullerton-Shirey SK, Choudhury P, Banerjee SK, Kummel AC. In-Situ Observation of Initial Stage in Dielectric Growth, and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces. Nano Letters. PMID 26393281 DOI: 10.1021/Acs.Nanolett.5B02429  1
2015 Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611  1
2015 Ronholm J, Petrunka LJ, Banerjee SK. Antimicrobial resistance in Vibrio spp. isolated from Canadian imported shrimp, 2009-2014. International Journal of Antimicrobial Agents. PMID 26155002 DOI: 10.1016/j.ijantimicag.2015.05.009  0.32
2015 Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Letters. 15: 5039-45. PMID 26134588 DOI: 10.1021/Acs.Nanolett.5B01080  1
2015 Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314  1
2015 Gupta S, Banerjee SK, Chatterjee A, Sharma AK, Kundu M, Basu J. The essential protein SepF of mycobacteria interacts with FtsZ and MurG to regulate cell growth and division. Microbiology (Reading, England). PMID 25971440 DOI: 10.1099/mic.0.000108  0.6
2015 Maity G, De A, Das A, Banerjee S, Sarkar S, Banerjee SK. Aspirin blocks growth of breast tumor cells and tumor-initiating cells and induces reprogramming factors of mesenchymal to epithelial transition. Laboratory Investigation; a Journal of Technical Methods and Pathology. 95: 702-17. PMID 25867761 DOI: 10.1038/labinvest.2015.49  0.36
2015 Roy A, Guchhait S, Dey R, Pramanik T, Hsieh CC, Rai A, Banerjee SK. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films. Acs Nano. 9: 3772-9. PMID 25848950 DOI: 10.1021/Nn5065716  1
2015 Banerjee SK. Dopamine: an old target in a new therapy. Journal of Cell Communication and Signaling. 9: 85-6. PMID 25731801 DOI: 10.1007/s12079-015-0275-9  0.36
2015 Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Acs Nano. 9: 363-70. PMID 25514177 DOI: 10.1021/Nn505354A  1
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  1
2015 Haque I, Banerjee S, De A, Maity G, Sarkar S, Majumdar M, Jha SS, McGragor D, Banerjee SK. CCN5/WISP-2 promotes growth arrest of triple-negative breast cancer cells through accumulation and trafficking of p27(Kip1) via Skp2 and FOXO3a regulation. Oncogene. 34: 3152-63. PMID 25132260 DOI: 10.1038/onc.2014.250  0.36
2015 Pramanik T, Roy U, Register LF, Banerjee SK. Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet Ieee Transactions On Nanotechnology. 14: 883-888. DOI: 10.1109/Tnano.2015.2457833  1
2015 Hsu W, Mantey J, Register LF, Banerjee SK. On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2434615  1
2015 Crum DM, Valsaraj A, Register LF, Banerjee SK, Sahu B, Krivakopic Z, Banna S, Nayak D. Impact of gate oxide complex band structure on n-channel III-V FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 250-253. DOI: 10.1109/SISPAD.2015.7292306  1
2015 Wu X, Mou X, Register LF, Banerjee SK. Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 124-127. DOI: 10.1109/SISPAD.2015.7292274  1
2015 Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677  1
2015 Rai A, Valsaraj A, Movva HCP, Roy A, Tutuc E, Register LF, Banerjee SK. Interfacial-oxygen-vacancy mediated doping of MoS2 by high-κ dielectrics Device Research Conference - Conference Digest, Drc. 2015: 189-190. DOI: 10.1109/DRC.2015.7175626  1
2015 Roy U, Kencke DL, Pramanik T, Register LF, Banerjee SK. Write error rate in spin-transfer-torque random access memory including micromagnetic effects Device Research Conference - Conference Digest, Drc. 2015: 147-148. DOI: 10.1109/DRC.2015.7175598  1
2015 Movva HCP, Rai A, Kang S, Kim K, Guchhait S, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. Top-gated WSe2 field-effect transistors with Pt contacts Device Research Conference - Conference Digest, Drc. 2015: 131-132. DOI: 10.1109/DRC.2015.7175590  1
2015 Hsu W, Mantey J, Register LF, Banerjee SK. Modulation-doped gate-normal tunnel FET for improved turn-on abruptness Device Research Conference - Conference Digest, Drc. 2015: 103-104. DOI: 10.1109/DRC.2015.7175576  1
2015 Mou X, Register LF, Macdonald AH, Banerjee SK. Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235413  1
2015 Valsaraj A, Chang J, Rai A, Register LF, Banerjee SK. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide 2d Materials. 2. DOI: 10.1088/2053-1583/2/4/045009  1
2015 Koh D, Shin SH, Ahn J, Sonde S, Kwon HM, Orzali T, Kim DH, Kim TW, Banerjee SK. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device Applied Physics Letters. 107. DOI: 10.1063/1.4935248  1
2015 Hsieh CC, Roy A, Rai A, Chang YF, Banerjee SK. Characteristics and mechanism study of cerium oxide based random access memories Applied Physics Letters. 106. DOI: 10.1063/1.4919442  1
2015 Roy U, Dey R, Pramanik T, Ghosh B, Register LF, Banerjee SK. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator Journal of Applied Physics. 117. DOI: 10.1063/1.4918900  1
2015 Sanne A, Ghosh R, Rai A, Movva HCP, Sharma A, Rao R, Mathew L, Banerjee SK. Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates Applied Physics Letters. 106. DOI: 10.1063/1.4907885  1
2015 Hsu W, Mantey J, Register LF, Banerjee SK. Comment on "assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor" [Appl. Phys. Lett. 105, 082108 (2014)] Applied Physics Letters. 106. DOI: 10.1063/1.4905865  1
2015 Reddy D, Register LF, Banerjee SK. Bilayer pseudospin field effect transistor Cmos and Beyond: Logic Switches For Terascale Integrated Circuits. 175-206. DOI: 10.1017/CBO9781107337886.011  1
2015 Lanford WA, Parenti M, Nordell BJ, Paquette MM, Caruso AN, Mäntymäki M, Hämäläinen J, Ritala M, Klepper KB, Miikkulainen V, Nilsen O, Tenhaeff W, Dudney N, Koh D, Banerjee SK, et al. Nuclear reaction analysis for H, Li, Be, B, C, N, O and F with an RBS check Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. DOI: 10.1016/J.Nimb.2015.10.052  0.6
2015 Mou X, Register LF, Banerjee SK. Ultralow-power pseudospintronic devices via exciton condensation in coupled two-dimensional material systems Nanoscale Materials and Devices For Electronics, Photonics and Solar Energy. 31-91. DOI: 10.1007/978-3-319-18633-7_2  1
2015 Bhattacharya S, Stubblefield PG, Banerjee SK, Bhattacharya N. Ethics and moral principles in the practice of medicine Regenerative Medicine: Using Non-Fetal Sources of Stem Cells. 281-285. DOI: 10.1007/978-1-4471-6542-2_30  0.6
2015 Bhattacharya N, Banerjee SK, Bhattacharya S, Stubblefield PG. Of baul behavior, stem cell primitive application? Regenerative Medicine: Using Non-Fetal Sources of Stem Cells. 219-221. DOI: 10.1007/978-1-4471-6542-2_21  0.6
2014 Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Electronics based on two-dimensional materials. Nature Nanotechnology. 9: 768-79. PMID 25286272 DOI: 10.1038/Nnano.2014.207  1
2014 Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509  1
2014 Maity G, Mehta S, Haque I, Dhar K, Sarkar S, Banerjee SK, Banerjee S. Pancreatic tumor cell secreted CCN1/Cyr61 promotes endothelial cell migration and aberrant neovascularization. Scientific Reports. 4: 4995. PMID 24833309 DOI: 10.1038/srep04995  0.36
2014 Hilali MM, Saha S, Onyegam E, Rao R, Mathew L, Banerjee SK. Light trapping in ultrathin 25 μm exfoliated Si solar cells Applied Optics. 53: 6140-6147. DOI: 10.1364/AO.53.006140  1
2014 Zhai Y, Mathew L, Rao R, Sreenivasan SV, Willson CG, Banerjee SK. Vertical finFET with salicide contact for potential power applications Ecs Journal of Solid State Science and Technology. 3: Q203-Q206. DOI: 10.1149/2.0151410Jss  1
2014 Saha S, Hilali MM, Onyegam EU, Sonde S, Rao RA, Mathew L, Upadhyaya A, Banerjee SK. Improved cleaning process for textured ~25 μm flexible mono-crystalline silicon heterojunction solar cells with metal backing Ecs Journal of Solid State Science and Technology. 3: Q142-Q145. DOI: 10.1149/2.0041407Jss  1
2014 Fahad HM, Hussain AM, Sevilla Torres GA, Banerjee SK, Hussain MM. Group IV nanotube transistors for next generation ubiquitous computing Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2050096  1
2014 Koh D, Yum JH, Banerjee SK, Hudnall TW, Bielawski C, Lanford WA, French BL, French M, Henry P, Li H, Kuhn M, King SW. Investigation of atomic layer deposited Beryllium oxide material properties for high-k dielectric applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4867436  1
2014 Zhai Y, Mathew L, Rao R, Palard M, Chopra S, Ekerdt JG, Register LF, Banerjee SK. High-performance vertical gate-all-around silicon nanowire FET with high-κ/metal gate Ieee Transactions On Electron Devices. 61: 3896-3900. DOI: 10.1109/Ted.2014.2353658  1
2014 Mou X, Register LF, Banerjee SK. Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 309-312. DOI: 10.1109/SISPAD.2014.6931625  1
2014 Crum DM, Valsaraj A, Register LF, Banerjee SK. Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 109-112. DOI: 10.1109/SISPAD.2014.6931575  1
2014 Valsaraj A, Register LF, Banerjee SK, Chang J. Density-functional-theory-based study of monolayer MoS2on oxide International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 73-76. DOI: 10.1109/SISPAD.2014.6931566  1
2014 Onyegam EU, Wiedmar KF, Saha S, James W, Banerjee SK. Comparison of microstructure and surface passivation quality of intrinsic a-Si:H films deposited by remote plasma chemical vapor deposition using argon and helium plasma 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1230-1233. DOI: 10.1109/PVSC.2014.6925137  1
2014 Saha S, Hilali MM, Onyegam EU, Sonde S, Rao RA, Mathew L, Upadhyaya A, Banerjee SK. Improved cleaning process for post-texture surface contamination removal for single heterojunction solar cells on ∼25μm thick exfoliated and flexible mono-crystalline silicon substrates 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 637-640. DOI: 10.1109/PVSC.2014.6925003  1
2014 Valsaraj A, Chang J, Register LF, Banerjee SK. Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/DRC.2014.6872310  1
2014 Hsu W, Mantey J, Hsieh CC, Roy A, Banerjee SK. Thin, relaxed Si1-xGex virtual substrates on Si grown using C-doped Ge buffers Applied Physics Letters. 105. DOI: 10.1063/1.4898697  1
2014 Chowdhury SF, Sonde S, Rahimi S, Tao L, Banerjee SK, Akinwande D. Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment Applied Physics Letters. 105: 33117. DOI: 10.1063/1.4891364  0.68
2014 Dey R, Pramanik T, Roy A, Rai A, Guchhait S, Sonde S, Movva HCP, Colombo L, Register LF, Banerjee SK. Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 Applied Physics Letters. 104. DOI: 10.1063/1.4881721  1
2014 Koh D, Kwon HM, Kim TW, Kim DH, Hudnall TW, Bielawski CW, Maszara W, Veksler D, Gilmer D, Kirsch PD, Banerjee SK. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Applied Physics Letters. 104. DOI: 10.1063/1.4871504  1
2014 Onyegam EU, Sarkar D, Hilali MM, Saha S, Mathew L, Rao RA, Smith RS, Xu D, Jawarani D, Garcia R, Ainom M, Banerjee SK. Realization of dual-heterojunction solar cells on ultra-thin ∼ 25 μ m, flexible silicon substrates Applied Physics Letters. 104. DOI: 10.1063/1.4871503  1
2014 Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767  1
2014 Chang J, Register LF, Banerjee SK. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4866872  1
2014 Sanne A, Movva HCP, Kang S, McClellan C, Corbet CM, Banerjee SK. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors Applied Physics Letters. 104. DOI: 10.1063/1.4866338  1
2014 Ramón ME, Movva HCP, Fahad Chowdhury S, Parrish KN, Rai A, Magnuson CW, Ruoff RS, Akinwande D, Banerjee SK. Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications Applied Physics Letters. 104. DOI: 10.1063/1.4866332  1
2014 Fiori G, Bonaccorso F, Iannaccone G, Palacios T, Neumaier D, Seabaugh A, Banerjee SK, Colombo L. Erratum: Electronics based on two-dimensional materials Nature Nanotechnology. 9: 1063-1063. DOI: 10.1038/Nnano.2014.283  0.72
2014 Min KS, Kang SH, Kim JK, Yum JH, Jhon YI, Hudnall TW, Bielawski CW, Banerjee SK, Bersuker G, Jhon MS, Yeom GY. Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices Microelectronic Engineering. 114: 121-125. DOI: 10.1016/j.mee.2013.10.003  1
2014 Johnson DW, Yum JH, Hudnall TW, Mushinski RM, Bielawski CW, Roberts JC, Wang WE, Banerjee SK, Harris HR. Characterization of ALD beryllium oxide as a potential high-k gate dielectric for low-leakage AlGaN/GaN MOSHEMTs Journal of Electronic Materials. 43: 151-154. DOI: 10.1007/S11664-013-2754-1  1
2013 De A, De A, Papasian C, Hentges S, Banerjee S, Haque I, Banerjee SK. Emblica officinalis extract induces autophagy and inhibits human ovarian cancer cell proliferation, angiogenesis, growth of mouse xenograft tumors. Plos One. 8: e72748. PMID 24133573 DOI: 10.1371/Journal.Pone.0072748  0.36
2013 Hamilton-Reeves JM, Banerjee S, Banerjee SK, Holzbeierlein JM, Thrasher JB, Kambhampati S, Keighley J, Van Veldhuizen P. Short-term soy isoflavone intervention in patients with localized prostate cancer: a randomized, double-blind, placebo-controlled trial. Plos One. 8: e68331. PMID 23874588 DOI: 10.1371/journal.pone.0068331  0.36
2013 Das BC, Thapa P, Karki R, Schinke C, Das S, Kambhampati S, Banerjee SK, Van Veldhuizen P, Verma A, Weiss LM, Evans T. Boron chemicals in diagnosis and therapeutics. Future Medicinal Chemistry. 5: 653-76. PMID 23617429 DOI: 10.4155/Fmc.13.38  0.36
2013 Mehta S, Moon J, Hashmi M, Leblanc M, Huang CH, Rinehart E, Wolf GT, Urba SG, Banerjee SK, Williamson S. Predictive factors in patients with advanced and metastatic squamous cell carcinoma of the head and neck: a study based on SWOG protocol S0420. Oncology Reports. 29: 2095-100. PMID 23563900 DOI: 10.3892/or.2013.2374  0.36
2013 Kambhampati S, Rajewski RA, Tanol M, Haque I, Das A, Banerjee S, Jha S, Burns D, Borrego-Diaz E, Van Veldhuizen PJ, Banerjee SK. A second-generation 2-Methoxyestradiol prodrug is effective against Barrett's adenocarcinoma in a mouse xenograft model. Molecular Cancer Therapeutics. 12: 255-63. PMID 23288782 DOI: 10.1158/1535-7163.MCT-12-0777  0.36
2013 Wei HT, Banerjee SK, Xia DS, Jackson MJ, Jia J, Chen FH. Magnetic characteristics of loess-paleosol sequences on the north slope of the Tianshan Mountains, northwestern China and their paleoclimatic implications Chinese Journal of Geophysics (Acta Geophysica Sinica). 56: 150-158. DOI: 10.6038/Cjg20130115  0.52
2013 Saha S, Onyegam EU, Sarkar D, Hilali MM, Rao RA, Mathew L, Jawarani D, Xu D, Smith RS, Das UK, Fossum JG, Banerjee SK. Exfoliated ∼25μm Si foil for solar cells with improved light-trapping Materials Research Society Symposium Proceedings. 1493: 51-58. DOI: 10.1557/Opl.2013.222  1
2013 Corbet C, Ramon M, Movva H, Reddy D, Kang S, Chowdhury SF, Akinwande D, Tutuc E, Register F, Banerjee SK. Novel graphene devices Ecs Transactions. 58: 73-77. DOI: 10.1149/05807.0073ecst  1
2013 Yum JH, Shin HS, Mushinski RM, Hudnall TW, Oh J, Loh WY, Bielawski CW, Bersuker G, Banerjee SK, Wang WE, Kirsch PD, Jammy R. A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer 2013 International Symposium On Vlsi Technology, Systems and Application, Vlsi-Tsa 2013. DOI: 10.1109/VLSI-TSA.2013.6545611  1
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 420-423. DOI: 10.1109/SISPAD.2013.6650664  1
2013 Chang J, Register LF, Banerjee SK. Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 408-411. DOI: 10.1109/SISPAD.2013.6650661  1
2013 Saha S, Rao RA, Mathew L, Ainom M, Banerjee SK. A novel low-cost method for fabricating bifacial solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2268-2271. DOI: 10.1109/PVSC.2013.6744929  1
2013 Onyegam EU, James W, Rao R, Mathew L, Hilali M, Banerjee SK. Amorphous/crystalline silicon heterojunction solar cells via Remote plasma chemical vapor deposition: Influence of hydrogen dilution, RF power, and sample Z-height position Conference Record of the Ieee Photovoltaic Specialists Conference. 1272-1276. DOI: 10.1109/PVSC.2013.6744373  1
2013 Kim TW, Kim DH, Koh DH, Kwon HM, Baek RH, Veksler D, Huffman C, Matthews K, Oktyabrsky S, Greene A, Ohsawa Y, Ko A, Nakajima H, Takahashi M, Nishizuka T, ... ... Banerjee SK, et al. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications Technical Digest - International Electron Devices Meeting, Iedm. 16.3.1-16.3.4. DOI: 10.1109/IEDM.2013.6724641  1
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET) Technical Digest - International Electron Devices Meeting, Iedm. 4.7.1-4.7.4. DOI: 10.1109/IEDM.2013.6724563  1
2013 Chang J, Register LF, Banerjee SK. Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance Device Research Conference - Conference Digest, Drc. 75-76. DOI: 10.1109/DRC.2013.6633800  1
2013 Guchhait S, Ohldag H, Arenholz E, Ferrer DA, Mehta A, Banerjee SK. Magnetic ordering of implanted Mn in HOPG substrates Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.174425  1
2013 Jadaun P, Xiao D, Niu Q, Banerjee SK. Topological classification of crystalline insulators with space group symmetry Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.085110  1
2013 Chang J, Register LF, Banerjee SK. Atomistic full-band simulations of monolayer MoS2 transistors Applied Physics Letters. 103. DOI: 10.1063/1.4837455  1
2013 Shin HS, Yum JH, Johnson DW, Harris HR, Hudnall TW, Oh J, Kirsch P, Wang WE, Bielawski CW, Banerjee SK, Lee JC, Lee HD. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4833815  1
2013 Khalil MS, Stoutimore MJA, Gladchenko S, Holder AM, Musgrave CB, Kozen AC, Rubloff G, Liu YQ, Gordon RG, Yum JH, Banerjee SK, Lobb CJ, Osborn KD. Evidence for hydrogen two-level systems in atomic layer deposition oxides Applied Physics Letters. 103. DOI: 10.1063/1.4826253  1
2013 Hsu W, Mantey J, Register LF, Banerjee SK. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4819458  1
2013 Jadaun P, Movva HCP, Register LF, Banerjee SK. Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications Journal of Applied Physics. 114. DOI: 10.1063/1.4817498  1
2013 Roy U, Pramanik T, Tsoi M, Register LF, Banerjee SK. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory Journal of Applied Physics. 113. DOI: 10.1063/1.4811230  1
2013 Mantey J, Hsu W, James J, Onyegam EU, Guchhait S, Banerjee SK. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer Applied Physics Letters. 102. DOI: 10.1063/1.4807500  1
2013 Saha S, Hilali MM, Onyegam EU, Sarkar D, Jawarani D, Rao RA, Mathew L, Smith RS, Xu D, Das UK, Sopori B, Banerjee SK. Single heterojunction solar cells on exfoliated flexible ∼25 μm thick mono-crystalline silicon substrates Applied Physics Letters. 102. DOI: 10.1063/1.4803174  1
2013 Roy A, Guchhait S, Sonde S, Dey R, Pramanik T, Rai A, Movva HCP, Colombo L, Banerjee SK. Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4803018  1
2013 Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678  1
2013 Park MS, Kim Y, Lee KT, Kang CY, Min BG, Oh J, Majhi P, Tseng HH, Lee JC, Banerjee SK, Lee JS, Jammy R, Jeong YH. Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs Microelectronic Engineering. 112: 80-83. DOI: 10.1016/J.Mee.2013.04.041  1
2012 Zhai Y, Mathew L, Rao R, Xu D, Banerjee SK. High-performance flexible thin-film transistors exfoliated from bulk wafer. Nano Letters. 12: 5609-15. PMID 23092185 DOI: 10.1021/Nl302735F  1
2012 Haque I, De A, Majumder M, Mehta S, McGregor D, Banerjee SK, Van Veldhuizen P, Banerjee S. The matricellular protein CCN1/Cyr61 is a critical regulator of Sonic Hedgehog in pancreatic carcinogenesis. The Journal of Biological Chemistry. 287: 38569-79. PMID 23027863 DOI: 10.1074/jbc.M112.389064  0.36
2012 Hilali MM, Yang S, Miller M, Xu F, Banerjee S, Sreenivasan SV. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures. Nanotechnology. 23: 405203. PMID 22997169 DOI: 10.1088/0957-4484/23/40/405203  1
2012 Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E. Direct measurement of the Fermi energy in graphene using a double-layer heterostructure. Physical Review Letters. 108: 116404. PMID 22540496 DOI: 10.1103/Physrevlett.108.116404  1
2012 Banerjee SK, Banerjee S. CCN5/WISP-2: A micromanager of breast cancer progression. Journal of Cell Communication and Signaling. 6: 63-71. PMID 22487979 DOI: 10.1007/s12079-012-0158-2  0.36
2012 Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires. Nano Letters. 12: 108-12. PMID 22111925 DOI: 10.1021/Nl2030695  1
2012 Zhai Y, Palard M, Mathew L, Hussain MM, Willson CG, Tutuc E, Banerjee SK. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays Micro and Nanosystems. 4: 333-338. DOI: 10.2174/1876402911204040333  1
2012 Yum JH, Oh J, Hudnall TW, Bielawski CW, Bersuker G, Banerjee SK. Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices Active and Passive Electronic Components. 2012. DOI: 10.1155/2012/359580  1
2012 Register LF, Mou X, Reddy D, Jung W, Sodeman I, Pesin D, Hassibi A, MacDonald AH, Banerjee SK. Bilayer pseudo-spin Field Effect Transistor (BiSFET): Concepts and critical issues for realization Ecs Transactions. 45: 3-14. DOI: 10.1149/1.3700447  1
2012 Dillen DC, Nah J, Varahramyan KM, Banerjee SK, Tutuc E. Electron transport and strain mapping in Ge-SixGe1-x core-shell nanowire heterostructures Ecs Transactions. 50: 681-689. DOI: 10.1149/05009.0681ecst  1
2012 Yum JH, Bersuker G, Hudnall TW, Bielawski CW, Kirsch P, Banerjee SK. A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. DOI: 10.1109/VLSI-TSA.2012.6210153  1
2012 Ramn ME, Parrish KN, Chowdhury SF, Magnuson CW, Movva HCP, Ruoff RS, Banerjee SK, Akinwande D. Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency Ieee Transactions On Nanotechnology. 11: 877-883. DOI: 10.1109/Tnano.2012.2203826  1
2012 David JK, Register LF, Banerjee SK. Semiclassical Monte Carlo analysis of graphene FETs Ieee Transactions On Electron Devices. 59: 976-982. DOI: 10.1109/Ted.2012.2184116  1
2012 Onyegam EU, Sarkar D, Hilali M, Saha S, Rao R, Mathew L, Jawarani D, James W, Mantey J, Ainom M, Garcia R, Banerjee SK. Exfoliated thin, flexible monocrystalline germanium heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2578-2582. DOI: 10.1109/PVSC.2012.6318122  1
2012 Saha S, Rao RA, Mathew L, Ainom M, Banerjee SK. A novel non-photolithographic patterning method for fabricating solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2250-2253. DOI: 10.1109/PVSC.2012.6318045  1
2012 Sarkar D, Onyegam EU, Saha S, Mathew L, Rao RA, Hilali MM, Smith RS, Xu D, Jawarani D, Garcia R, Stout R, Gurmu A, Ainom M, Fossum JG, Banerjee SK. Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC-Vol2.2013.6656713  1
2012 Ramon ME, Parrish KN, Lee J, Magnuson CW, Tao L, Ruoff RS, Banerjee SK, Akinwande D. Graphene frequency doubler with record 3GHz bandwidth and the maximum conversion gain prospects Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259401  1
2012 Mantey J, Hsu W, Jamil M, Onyegam EU, Tutuc E, Banerjee SK. Germanium nMOSFETs with GeO 2 passivation and n+/p junctions formed by spin-on dopants 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 22-23. DOI: 10.1109/ISTDM.2012.6222438  1
2012 Kim TW, Kim DH, Koh DH, Hill RJW, Lee RTP, Wong MH, Cunningham T, Del Alamo JA, Banerjee SK, Oktyabrsky S, Greene A, Ohsawa Y, Trickett Y, Nakamura G, Li Q, et al. ETB-QW InAs MOSFET with scaled body for improved electrostatics Technical Digest - International Electron Devices Meeting, Iedm. 32.3.1-32.3.4. DOI: 10.1109/IEDM.2012.6479151  1
2012 Koh D, Yum JH, Akyol T, Ferrer DA, Lei M, Hudnall TW, Downer MC, Bielawski CW, Hill R, Bersuker G, Banerjee SK. Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 163-166. DOI: 10.1109/ICIPRM.2012.6403347  1
2012 Chang J, Register LF, Banerjee SK. Possible applications of topological insulator thin films for tunnel FETs Device Research Conference - Conference Digest, Drc. 31-32. DOI: 10.1109/DRC.2012.6256984  1
2012 Movva HCP, Ramón ME, Corbet CM, Chowdhury FS, Carpenter G, Tutuc E, Banerjee SK. Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions Device Research Conference - Conference Digest, Drc. 175-176. DOI: 10.1109/DRC.2012.6256963  1
2012 Banerjee SK, Register LF, Tutuc E, Reddy D, Kim S, Basu D, Corbet C, Colombo L, Carpenter G, MacDonald AH. Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2012.6256938  1
2012 Reddy D, Register LF, Banerjee SK. Bilayer graphene vertical tunneling field effect transistor Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2012.6256932  1
2012 Reddy D, Register LF, Carpenter GD, Banerjee SK. Erratum: Graphene field-effect transistors (Journal of Physics D: Applied Physics (2011) 44 (313001)) Journal of Physics D. 45: 19501. DOI: 10.1088/0022-3727/45/1/019501  0.92
2012 Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4773212  1
2012 Yum JH, Shin HS, Hill R, Oh J, Lee HD, Mushinski RM, Hudnall TW, Bielawski CW, Banerjee SK, Loh WY, Wang WE, Kirsch P. A study of capping layers for sulfur monolayer doping on III-V junctions Applied Physics Letters. 101. DOI: 10.1063/1.4772641  1
2012 Chang J, Register LF, Banerjee SK. Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 112. DOI: 10.1063/1.4770324  1
2012 Movva HCP, Ramón ME, Corbet CM, Sonde S, Fahad Chowdhury S, Carpenter G, Tutuc E, Banerjee SK. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Applied Physics Letters. 101. DOI: 10.1063/1.4765658  1
2012 Lei M, Yum JH, Price J, Hudnall TW, Bielawski CW, Banerjee SK, Lysaght PS, Bersuker G, Downer MC. Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) Applied Physics Letters. 100. DOI: 10.1063/1.3697646  1
2012 Yum JH, Bersuker G, Oh J, Banerjee SK. Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability Applied Physics Letters. 100. DOI: 10.1063/1.3679720  1
2012 Roy U, Seinige H, Ferdousi F, Mantey J, Tsoi M, Banerjee SK. Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies Journal of Applied Physics. 111. DOI: 10.1063/1.3677311  1
2012 Liu Q, Roberts AP, Larrasoaa JC, Banerjee SK, Guyodo Y, Tauxe L, Oldfield F. Environmental magnetism: Principles and applications Reviews of Geophysics. 50. DOI: 10.1029/2012Rg000393  0.52
2012 Tao L, Lee J, Holt M, Chou H, McDonnell SJ, Ferrer DA, Babenco MG, Wallace RM, Banerjee SK, Ruoff RS, Akinwande D. Uniform wafer-scale chemical vapor deposition of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer Journal of Physical Chemistry C. 116: 24068-24074. DOI: 10.1021/Jp3068848  1
2012 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates Thin Solid Films. 520: 3091-3095. DOI: 10.1016/J.Tsf.2011.11.053  1
2012 Jadaun P, Sahu BR, Register LF, Banerjee SK. Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects Solid State Communications. 152: 1497-1502. DOI: 10.1016/J.Ssc.2012.04.044  1
2012 Lascu I, McLauchlan KK, Myrbo A, Leavitt PR, Banerjee SK. Sediment-magnetic evidence for last millennium drought conditions at the prairie-forest ecotone of northern United States Palaeogeography, Palaeoclimatology, Palaeoecology. 337: 99-107. DOI: 10.1016/J.Palaeo.2012.04.001  0.52
2012 David JK, Register LF, Banerjee SK. A path-sum Monte Carlo approach for many-electron systems within a tight-binding basis Journal of Computational Electronics. 11: 172-181. DOI: 10.1007/S10825-012-0393-Z  1
2012 Lei M, Yum JH, Banerjee SK, Bersuker G, Downer MC. Band offsets of atomic layer deposited Al 2O 3 and HfO 2 on Si measured by linear and nonlinear internal photoemission Physica Status Solidi (B) Basic Research. 249: 1160-1165. DOI: 10.1002/Pssb.201100744  1
2011 Jadaun P, Banerjee SK, Register LF, Sahu B. Density functional theory based study of graphene and dielectric oxide interfaces. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 505503. PMID 22119858 DOI: 10.1088/0953-8984/23/50/505503  1
2011 Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. Acs Nano. 5: 7198-204. PMID 21800895 DOI: 10.1021/Nn202012M  1
2011 Jo I, Hsu IK, Lee YJ, Sadeghi MM, Kim S, Cronin S, Tutuc E, Banerjee SK, Yao Z, Shi L. Low-frequency acoustic phonon temperature distribution in electrically biased graphene. Nano Letters. 11: 85-90. PMID 21126050 DOI: 10.1021/Nl102858C  1
2011 Chang J, Register LF, Banerjee SK, Sahu B. Thin film electronic properties of ternary topological insulator Materials Research Society Symposium Proceedings. 1393: 1-6. DOI: 10.1557/Opl.2012.724  1
2011 Yum JH, Akyol T, Ferrer DA, Lee JC, Banerjee SK, Lei M, Downer M, Hudnall TW, Bielawski CW, Bersuker G. Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2O 3 deposited as an interface passivation layer on GaAs MOS devices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3628546  1
2011 Lee T, Choi K, Ando T, Park DG, Gribelyuk MA, Kwon U, Banerjee SK. Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 21209. DOI: 10.1116/1.3562974  1
2011 Ferdousi F, Jamil M, Liu H, Kaur S, Ferrer D, Colombo L, Banerjee SK. Fullerene-based hybrid devices for high-density nonvolatile memory Ieee Transactions On Nanotechnology. 10: 572-575. DOI: 10.1109/Tnano.2010.2053215  1
2011 Yum JH, Bersuker G, Akyol T, Ferrer DA, Lei M, Park KW, Hudnall TW, Downer MC, Bielawski CW, Yu ET, Price J, Lee JC, Banerjee SK. Epitaxial ALD BeO: Efficient oxygen diffusion barrier for EOT scaling and reliability improvement Ieee Transactions On Electron Devices. 58: 4384-4392. DOI: 10.1109/Ted.2011.2170073  1
2011 Lee SH, Majhi P, Ferrer DA, Hung PY, Huang J, Oh J, Loh WY, Sassman B, Min BG, Tseng HH, Harris R, Bersuker G, Kirsch PD, Jammy R, Banerjee SK. Impact of millisecond flash-assisted rapid thermal annealing on SiGe heterostructure channel pMOSFETs with a high-k/metal gate Ieee Transactions On Electron Devices. 58: 2917-2923. DOI: 10.1109/Ted.2011.2159862  1
2011 Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876  1
2011 Lee T, Banerjee SK. Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS Devices Ieee Transactions On Electron Devices. 58: 562-566. DOI: 10.1109/Ted.2010.2091453  1
2011 Liu KM, Register LF, Banerjee SK. Quantum transport simulation of strain and orientation effects in sub-20 nm silicon-on-insulator FinFETs Ieee Transactions On Electron Devices. 58: 4-10. DOI: 10.1109/Ted.2010.2084090  1
2011 Jamil M, Mantey J, Onyegam EU, Carpenter GD, Tutuc E, Banerjee SK. High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant” Ieee Electron Device Letters. 32: 1203-1205. DOI: 10.1109/Led.2011.2160142  1
2011 Register LF, Hasan MM, Banerjee SK. Stepped broken-gap heterobarrier tunneling field-effect transistor for ultralow power and high speed Ieee Electron Device Letters. 32: 743-745. DOI: 10.1109/Led.2011.2126038  1
2011 Chang J, Jadaun P, Register LF, Banerjee SK, Sahu B. Dielectric capping effects on binary and ternary topological insulator surface states Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155105  1
2011 Basu D, Register LF, MacDonald AH, Banerjee SK. Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035449  1
2011 Guchhait S, Jamil M, Ohldag H, Mehta A, Arenholz E, Lian G, Lifatou A, Ferrer DA, Markert JT, Colombo L, Banerjee SK. Ferromagnetism in Mn-implanted epitaxially grown Ge on Si(100) Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.024432  1
2011 Chang J, Register LF, Banerjee SK, Sahu B. Density functional study of ternary topological insulator thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.235108  1
2011 Reddy D, Register LF, Carpenter GD, Banerjee SK. Graphene field-effect transistors Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/31/313001  1
2011 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric Applied Physics Letters. 99. DOI: 10.1063/1.3614446  1
2011 Ferrer DA, Guchhait S, Liu H, Ferdousi F, Corbet C, Xu H, Doczy M, Bourianoff G, Mathew L, Rao R, Saha S, Ramon M, Ganguly S, Markert JT, Banerjee SK. Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets Journal of Applied Physics. 110. DOI: 10.1063/1.3608109  1
2011 Yum JH, Akyol T, Lei M, Hudnall T, Bersuker G, Downer M, Bielawski CW, Lee JC, Banerjee SK. Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices Journal of Applied Physics. 109. DOI: 10.1063/1.3553872  1
2011 David JK, Register LF, Banerjee SK. 3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs Solid-State Electronics. 61: 7-12. DOI: 10.1016/J.Sse.2010.12.013  1
2011 Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK. A study of highly crystalline novel beryllium oxide film using atomic layer deposition Journal of Crystal Growth. 334: 126-133. DOI: 10.1016/J.Jcrysgro.2011.08.040  1
2010 Lee T, Banerjee SK. Device characteristics of HfON charge-trap layer nonvolatile memory Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1005-1010. DOI: 10.1116/1.3481140  1
2010 Liu E, Jain N, Varahramyan KM, Nah J, Banerjee SK, Tutuc E. Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 9: 237-242. DOI: 10.1109/Tnano.2009.2027119  1
2010 Chang J, Kapoor AK, Register LF, Banerjee SK. Analytical model of short-channel double-gate JFETs Ieee Transactions On Electron Devices. 57: 1846-1855. DOI: 10.1109/Ted.2010.2051193  1
2010 Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280  1
2010 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406  1
2010 Jamil M, Oh J, Ramon M, Kaur S, Majhi P, Tutuc E, Banerjee SK. High-Mobility TaN/ $\hbox{Al}_{2}\hbox{O}_{3}$ /Ge(111) n-MOSFETs With RTO-Grown Passivation Layer Ieee Electron Device Letters. 31: 1208-1210. DOI: 10.1109/Led.2010.2071373  1
2010 Basu D, Register LF, Reddy D, MacDonald AH, Banerjee SK. Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075409  1
2010 Jamil M, Liu ES, Ferdousi F, Donnelly JP, Tutuc E, Banerjee SK. Effects of Si-cap thickness and temperature on device performance of Si/Ge1-xCx/Si p-MOSFETs Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045005  1
2010 Shahrjerdi D, Nah J, Hekmatshoar B, Akyol T, Ramon M, Tutuc E, Banerjee SK. Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric Applied Physics Letters. 97. DOI: 10.1063/1.3521284  1
2010 Ghosh B, Liu H, Winstead B, Foisy MC, Banerjee SK. Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Solid-State Electronics. 54: 1295-1299. DOI: 10.1016/J.Sse.2010.04.005  1
2009 Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science (New York, N.Y.). 324: 1312-4. PMID 19423775 DOI: 10.1126/Science.1171245  1
2009 Nah J, Varahramyan KM, Liu ES, Opotowsky A, Ferrer D, Banerjee SK, Tutuc E. Growth and electronic properties of Ge-SixGe1-x core-shell nanowire heterostructures Proceedings of Spie. 7406. DOI: 10.1117/12.829159  1
2009 Garcia-Gutierrez DI, Shahrjerdi D, Kaushik V, Banerjee SK. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2390-2395. DOI: 10.1116/1.3256229  1
2009 Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850  1
2009 Liu E, Kelly DQ, Donnelly JP, Tutuc E, Banerjee SK. Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs Ieee Electron Device Letters. 30: 136-138. DOI: 10.1109/Led.2008.2009364  1
2009 Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362  1
2009 Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Arsenic defect complexes at SiO2/Si interfaces: A density functional theory study Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.205328  1
2009 Kim Y, Kirichenko TA, Kong N, Henkelman G, Banerjee SK. First-principles studies of small arsenic interstitial complexes in crystalline silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.075201  1
2009 Liu H, Ferrer DA, Ferdousi F, Banerjee SK. Nonvolatile memory with Co- SiO2 core-shell nanocrystals as charge storage nodes in floating gate Applied Physics Letters. 95. DOI: 10.1063/1.3258471  1
2009 Varahramyan KM, Ferrer D, Tutuc E, Banerjee SK. Band engineered epitaxial Ge-SiXGe1-X core-shell nanowire heterostructures Applied Physics Letters. 95: 33101. DOI: 10.1063/1.3173811  1
2009 Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410  1
2009 Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021  1
2009 Sun C, Floresca HC, Wang JG, Jamil M, Guchhait S, Ferrer D, Banerjee SK, Lian G, Colombo L, Kim MJ. Amorphous structure and stability of Mn implanted GeC ferromagnetic semiconductor Microscopy and Microanalysis. 15: 1216-1217. DOI: 10.1017/S1431927609092927  1
2009 Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration Journal of Electronic Materials. 38: 438-442. DOI: 10.1007/S11664-008-0645-7  1
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2938728  1
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  1
2008 Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889  1
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  1
2008 Lee SH, Majhi P, Oh J, Sassman B, Young C, Bowonder A, Loh WY, Choi KJ, Cho BJ, Lee HD, Kirsch P, Harris HR, Tsai W, Datta S, Tseng HH, ... Banerjee SK, et al. Demonstration of Lg ∼ nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high Ion/Ioff (>5 × 104, and controlled short channel effects (SCEs) Ieee Electron Device Letters. 29: 1017-1020. DOI: 10.1109/Led.2008.2002073  1
2008 Sahu B, Min H, MacDonald AH, Banerjee SK. Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons Physical Review B. 78: 45404. DOI: 10.1103/Physrevb.78.045404  1
2008 Liu KM, Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors Journal of Applied Physics. 104. DOI: 10.1063/1.3031303  1
2008 Nah J, Varahramyan K, Liu ES, Banerjee SK, Tutuc E. Doping of Ge- Six Ge1-x core-shell nanowires using low energy ion implantation Applied Physics Letters. 93. DOI: 10.1063/1.3013335  1
2008 Kong N, Kirichenko TA, Hwang GS, Banerjee SK. Interstitial-based boron diffusion dynamics in amorphous silicon Applied Physics Letters. 93. DOI: 10.1063/1.2976556  1
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2943186  1
2008 Kong N, Kirichenko TA, Kim Y, Foisy MC, Banerjee SK. Physically based kinetic Monte Carlo modeling of arsenic-interstitial interaction and arsenic uphill diffusion during ultrashallow junction formation Journal of Applied Physics. 104. DOI: 10.1063/1.2942398  1
2008 Shahrjerdi D, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937404  1
2008 Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim HS, Ok I, Yum JH, Park SI, Banerjee SK, Lee JC. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2937117  1
2008 Shahrjerdi D, Akyol T, Ramon M, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2931708  1
2008 Basu D, Gilbert MJ, Register LF, Banerjee SK, MacDonald AH. Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839330  1
2008 Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 103. DOI: 10.1063/1.2809403  1
2008 Donnelly JP, Kelly DQ, Garcia-Gutierrez DI, José-Yacamán M, Banerjee SK. High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate Electronics Letters. 44: 240-241. DOI: 10.1049/El:20082558  1
2008 Garcia-Gutierrez DI, Kaushik V, Shahrjerdi D, Banerjee SK. Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications Microscopy and Microanalysis. 14: 446-447. DOI: 10.1017/S1431927608083001  1
2007 Banerjee SK, Tang S, Mao C, Sarkar J, Liu H, Shahrjerdi D, Lee CH, Trent JD. Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories The Japan Society of Applied Physics. 2007: 948-949. DOI: 10.7567/Ssdm.2007.D-8-1  1
2007 Dey S, Lee S, Joshi SV, Majhi P, Banerjee SK. Gate-All-Around (GAA) Fully Depleted (FD) Cantilever Channel MOSFET with High-k Dielectric and Metal Gate Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G05-16  1
2007 Kong N, Kirichenko TA, Hwang GS, Mark FC, Anderson SGH, Banerjee SK. An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon Mrs Proceedings. 994: 307-313. DOI: 10.1557/Proc-0994-F10-02  1
2007 Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119  1
2007 Joshi S, Pinto A, Huang Y-, Wise R, Cleavelin R, Seacrist M, Ries M, Ramin M, Freeman M, Nguyen B, Matthews K, Wilks B, Denning L, Johnson C, Bennet J, ... ... Banerjee SK, et al. Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology Ieee Transactions On Electron Devices. 54: 2045-2050. DOI: 10.1109/Ted.2007.901350  0.8
2007 Tang S, Mao C, Liu Y, Kelly DQ, Banerjee SK. Protein-Mediated Nanocrystal Assembly for Flash Memory Fabrication Ieee Transactions On Electron Devices. 54: 433-438. DOI: 10.1109/Ted.2006.890234  1
2007 Fan XF, Register LF, Winstead B, Foisy MC, Chen W, Zheng X, Ghosh B, Banerjee SK. Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa Ieee Transactions On Electron Devices. 54: 291-296. DOI: 10.1109/Ted.2006.888667  1
2007 Zaman RJ, Mathews K, Xiong W, Banerjee SK. Trigate FET device characteristics improvement using a hydrogen anneal process with a novel hard mask approach Ieee Electron Device Letters. 28: 916-918. DOI: 10.1109/Led.2007.905964  1
2007 Shahrjerdi D, Garcia-Gutierrez DI, Banerjee SK. Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach Ieee Electron Device Letters. 28: 793-796. DOI: 10.1109/Led.2007.902612  1
2007 Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445  1
2007 Joshi S, Krug C, Heh D, Na HJ, Harris HR, Oh JW, Kirsch PD, Majhi P, Lee BH, Tseng HH, Jammy R, Lee JC, Banerjee SK. Improved Ge surface passivation with ultrathin SiOX enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack Ieee Electron Device Letters. 28: 308-311. DOI: 10.1109/Led.2007.893274  1
2007 Min H, Sahu B, Banerjee SK, MacDonald AH. Ab initio theory of gate induced gaps in graphene bilayers Physical Review B. 75: 155115. DOI: 10.1103/Physrevb.75.155115  1
2007 Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190  1
2007 Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438  1
2007 Sarkar J, Tang S, Shahrjerdi D, Banerjee SK. Vertical flash memory with protein-mediated assembly of nanocrystal floating gate Applied Physics Letters. 90. DOI: 10.1063/1.2711528  1
2007 Kong N, Banerjee SK, Kirichenko TA, Anderson SGH, Foisy MC. Enhanced and retarded diffusion of arsenic in silicon by point defect engineering Applied Physics Letters. 90. DOI: 10.1063/1.2450663  1
2007 Kim Y, Kirichenko TA, Kong N, Larson L, Banerjee SK. First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon Physica B: Condensed Matter. 401: 144-147. DOI: 10.1016/J.Physb.2007.08.132  1
2007 Kelly DQ, Lee S, Kalra P, Harris R, Oh J, Kirsch P, Banerjee SK, Majhi P, Tseng H, Jammy R. Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Microelectronic Engineering. 84: 2054-2057. DOI: 10.1016/J.Mee.2007.04.133  1
2007 Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024  1
2006 Schricker AD, Joshi SV, Hanrath T, Banerjee SK, Korgel BA. Temperature dependence of the field effect mobility of solution-grown germanium nanowires. The Journal of Physical Chemistry. B. 110: 6816-23. PMID 16570990 DOI: 10.1021/Jp055663N  1
2006 Yonghyun K, Kirichenko TA, Banerjee SK, Hwang GS. Ab-initio study of boron diffusion retardation in Si1-xGex Mrs Proceedings. 912: 105-109. DOI: 10.1557/Proc-0912-C03-08  1
2006 Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384  1
2006 Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Ge interactions on HfO 2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO 2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 78-83. DOI: 10.1116/1.2137328  1
2006 Xia T, Register LF, Banerjee SK. Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors Ieee Transactions On Nanotechnology. 5: 80-83. DOI: 10.1109/Tnano.2006.869693  1
2006 Ganguly S, Register LF, MacDonald AH, Banerjee SK. Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode Ieee Transactions On Nanotechnology. 5: 30-36. DOI: 10.1109/Tnano.2005.861406  1
2006 Liu Y, Dey S, Tang S, Kelly DQ, Sarkar J, Banerjee SK. Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Ieee Transactions On Electron Devices. 53: 2598-2602. DOI: 10.1109/Ted.2006.882395  1
2006 Li F, Register LF, Hasan MM, Banerjee SK. A program for device model parameter extraction from gate capacitance and current of ultrathin SiO2 and high-κ gate stacks Ieee Transactions On Electron Devices. 53: 2118-2126. DOI: 10.1109/Ted.2006.880373  1
2006 Li F, Tseng HH, Register LF, Tobin PJ, Banerjee SK. Asymmetry in gate capacitance-voltage (C-V) behavior of ultrathin metal gate MOSFETs with HfO2 gate dielectrics Ieee Transactions On Electron Devices. 53: 1943-1946. DOI: 10.1109/Ted.2006.878013  1
2006 Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks Ieee Transactions On Electron Devices. 53: 1096-1106. DOI: 10.1109/Ted.2006.871877  1
2006 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of strained germanium nanoscale bulk pMOSFETs Ieee Transactions On Electron Devices. 53: 533-537. DOI: 10.1109/Ted.2005.863765  1
2006 Kelly DQ, Donnelly JP, Dey S, Joshi SV, Gutierrez DIG, Yacaman MJ, Banerjee SK. BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates Ieee Electron Device Letters. 27: 265-268. DOI: 10.1109/Led.2006.870866  1
2006 Ganguly S, MacDonald AH, Register LF, Banerjee SK. Scattering dependence of bias-controlled magnetization switching in ferromagnetic resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.153314  1
2006 Ganguly S, MacDonald AH, Register LF, Banerjee S. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.033310  1
2006 Shahrjerdi D, Oye MM, Holmes AL, Banerjee SK. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization Applied Physics Letters. 89. DOI: 10.1063/1.2234837  1
2006 Kelly DQ, Wiedmann I, Donnelly JP, Joshi SV, Dey S, Banerjee SK, Garcia-Gutierrez DI, José-Yacamán M. Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications Applied Physics Letters. 88: 152101. DOI: 10.1063/1.2195008  1
2006 Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG. Surface reactions and kinetically-driven patterning scheme for selective deposition of Si and Ge nanoparticle arrays on HfO2 Surface Science. 600. DOI: 10.1016/J.Susc.2005.12.029  1
2006 Jayanarayanan SK, Dey S, Donnelly JP, Banerjee SK. A novel 50 nm vertical MOSFET with a dielectric pocket Solid-State Electronics. 50: 897-900. DOI: 10.1016/J.Sse.2006.04.003  1
2006 Ghosh B, Chen JH, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics Solid-State Electronics. 50: 248-253. DOI: 10.1016/J.Sse.2005.12.007  0.92
2005 Li F, Mudanai S, Register LF, Banerjee SK. A physically based compact gate C-V model for ultrathin (EOT ∼ 1 nm and below) gate dielectric MOS devices Ieee Transactions On Electron Devices. 52: 1148-1158. DOI: 10.1109/Ted.2005.848079  1
2005 Ghosh B, Wang X, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium n- and pMOSFETs Ieee Transactions On Electron Devices. 52: 547-553. DOI: 10.1109/Ted.2005.844736  1
2005 Yu D, Hwang GS, Kirichenko TA, Banerjee SK. Structure and diffusion of excess Si atoms in SiO2 Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.205204  1
2005 Kirichenko TA, Yu D, Banerjee SK, Hwang GS. Silicon interstitials at Si SiO2 interfaces: Density functional calculations Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035345  1
2005 Ganguly S, Register LF, Banerjee S, MacDonald AH. Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245306  1
2005 Kohli P, Jain A, Chakravarthi S, Bu H, Dunham ST, Banerjee S. Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation Journal of Applied Physics. 97. DOI: 10.1063/1.1884246  1
2005 Dey S, Joshi S, Banerjee SK. Current-crowding effect in multiple cantilever channel MOSFET Solid-State Electronics. 49: 1248-1250. DOI: 10.1016/J.Sse.2005.04.011  1
2005 Xia TS, Register LF, Banerjee SK. Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect Solid-State Electronics. 49: 860-864. DOI: 10.1016/J.Sse.2005.02.002  1
2005 Kelly DQ, Dey S, Onsongo D, Banerjee SK. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs Microelectronics Reliability. 45: 1033-1040. DOI: 10.1016/J.Microrel.2005.01.011  1
2004 Kirichenko TA, Yu D, Banerjee SK, Hwang GS. Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO 2 Interface Mrs Proceedings. 810: 339-344. DOI: 10.1557/Proc-810-C8.5  1
2004 Li HJ, Zeitzoff P, Larson L, Banerjee SK. B diffusion in Si with pre-amorphization of different species Journal of Vacuum Science & Technology B. 22: 2380-2383. DOI: 10.1116/1.1795250  1
2004 Kohli P, Jain A, Bu H, Chakravarthi S, Machala C, Dunham ST, Banerjee SK. Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation Journal of Vacuum Science & Technology B. 22: 471-476. DOI: 10.1116/1.1642645  0.6
2004 Onsongo D, Kelly DQ, Dey S, Wise RL, Cleavelin CR, Banerjee SK. Improved hot-electron reliability in strained-Si nMOS Ieee Transactions On Electron Devices. 51: 2193-2199. DOI: 10.1109/Ted.2004.839871  1
2004 Chen X, Joshi S, Chen J, Ngai T, Banerjee SK. MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD Ieee Transactions On Electron Devices. 51: 1532-1534. DOI: 10.1109/Ted.2004.833957  1
2004 Chen JJ, Bojarezuk NA, Shang H, Copel M, Hannon JB, Karasinski J, Preisler E, Banerjee SK, Guha S. Ultrathin Al/sub 2/O/sub 3/ and HfO/sub 2/ gate dielectrics on surface-nitrided Ge Ieee Transactions On Electron Devices. 51: 1441-1447. DOI: 10.1109/Ted.2004.833593  0.56
2004 Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/Ted.2004.828296  1
2004 Xia TS, Register LF, Banerjee SK. Calculations and applications of the complex band structure for carbon nanotube field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.045322  1
2004 Kirichenko TA, Banerjee SK, Hwang GS. Interaction of neutral vacancies and interstitials with the Si(001) surface Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.045321  1
2004 Harrison SA, Yu D, Edgar TF, Hwang GS, Kirichenko TA, Banerjee SK. Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface Journal of Applied Physics. 96: 3334-3338. DOI: 10.1063/1.1778475  1
2004 Xia TS, Register LF, Banerjee SK. Quantum transport in carbon nanotube transistors: Complex band structure effects Journal of Applied Physics. 95: 1597-1599. DOI: 10.1063/1.1631747  1
2004 Kirichenko TA, Banerjee SK, Hwang GS. Mechanisms of monovacancy annihilation and type-A defect creation on Si(0 0 1)-2 × 1 Surface Science. 555: 187-192. DOI: 10.1016/J.Susc.2004.02.028  1
2004 Shi Z, Onsongo D, Rai R, Samavedam SB, Banerjee SK. Hole mobility enhancement and Si cap optimization in nanoscale strained Si1-xGex PMOSFETs Solid-State Electronics. 48: 2299-2306. DOI: 10.1016/J.Sse.2004.04.016  1
2004 Quinones E, Onsongo D, Shi Z, Banerjee SK. Evaluation of heterojunction MOSFETs using UHVCVD deposited tensile-strained Si1-yCy alloy layers Solid-State Electronics. 48: 379-387. DOI: 10.1016/J.Sse.2003.09.003  1
2004 Kohli P, Chakravarthi S, Jain A, Bu H, Mehrotra M, Dunham ST, Banerjee SK. Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 114: 390-396. DOI: 10.1016/J.Mseb.2004.07.080  1
2004 Kirichenko TA, Banerjee SK, Hwang GS. Surface chemistry effects on vacancy and interstitial annihilation on Si(001) Physica Status Solidi (B) Basic Research. 241: 2303-2312. DOI: 10.1002/Pssb.200404943  1
2003 Li HJ, Rhoad T, Zeitzoff P, Tichy R, Larson L, Banerjee SK. B diffusion in low energy B/BF2 implants with pre-amorphization of different species Mrs Proceedings. 765: 161-166. DOI: 10.1557/Proc-765-D5.4  1
2003 Kim D, Kim T, Banerjee SK. Memory characterization of SiGe quantum dot flash memories with HfO/sub 2/ and SiO/sub 2/ tunneling dielectrics Ieee Transactions On Electron Devices. 50: 1823-1829. DOI: 10.1109/Ted.2003.815370  0.92
2003 Xia T, Register LF, Banerjee SK. Quantum transport in double-gate MOSFETs with complex band structure Ieee Transactions On Electron Devices. 50: 1511-1516. DOI: 10.1109/Ted.2003.813348  1
2003 Fan YY, Xiang Q, An J, Register LF, Banerjee SK. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance Ieee Transactions On Electron Devices. 50: 433-439. DOI: 10.1109/Ted.2003.809433  1
2003 Kim D, Prins FE, Kim T, Hwang S, Lee CH, Kwong D, Banerjee SK. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO/sub 2/ tunneling oxide Ieee Transactions On Electron Devices. 50: 510-513. DOI: 10.1109/Ted.2002.804722  0.92
2003 Li HJ, Bennett J, Zeitzoff P, Kirichenko TA, Banerjee SK, Henke D. Indium out-diffusion from silicon during rapid thermal annealing Ieee Electron Device Letters. 24: 221-223. DOI: 10.1109/Led.2003.810891  1
2003 Shi Z, Onsongo D, Onishi K, Lee JC, Banerjee SK. Mobility enhancement in surface channel SiGe PMOSFETs with HfO 2 gate dielectrics Ieee Electron Device Letters. 24: 34-36. DOI: 10.1109/Led.2002.807020  1
2003 Chen X, Banerjee S, Zhou J, Rabenberg L. TEM Study Of Silicide Formation And Microstructural Development Of Ni/ Si1-xGex Microscopy and Microanalysis. 9: 508-509. DOI: 10.1017/S1431927603442542  1
2003 Chen W, Register LF, Banerjee SK. Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs Physica E: Low-Dimensional Systems and Nanostructures. 19: 28-32. DOI: 10.1016/S1386-9477(03)00289-3  1
2003 Banerjee S. Bandgap and strain engineered Si-Ge-C vertical and planar MOSFETs Microelectronic Engineering. 69: 106-117. DOI: 10.1016/S0167-9317(03)00287-9  0.8
2003 Shi Z, Onsongo D, Chen X, Kim DW, Nieh RE, Banerjee SK. Nickel silicidation techniques for strained Si1-xGex, Si1-x-yGexCy, and Si1-yCy alloys material-device applications Journal of Electronic Materials. 32: 184-190. DOI: 10.1007/S11664-003-0191-2  1
2003 Chen X, Shi Z, Banerjee SK, Zhou JP, Rabenberg LK. High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1-xGex Journal of Electronic Materials. 32: 1171-1181. DOI: 10.1007/S11664-003-0008-3  1
2002 Li HJ, Onsongo D, Kirichenko TA, Kohliand P, Banerjee SK. The Pile-Ups Of Aluminum And Boron In The Sige(C) Mrs Proceedings. 737: 643-648. DOI: 10.1557/Proc-737-F8.1  1
2002 Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713  1
2002 Chen X, Ouyang QC, Wang G, Banerjee SK. Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Ieee Transactions On Electron Devices. 49: 1962-1968. DOI: 10.1109/Ted.2002.804697  1
2002 Chen Y, Wang G, Li D, Oak SK, Shrivastav G, Rubin L, Tasch AF, Banerjee SK. A universal ion implantation model for all species into single-crystal silicon Ieee Transactions On Electron Devices. 49: 1519-1525. DOI: 10.1109/Ted.2002.801300  1
2002 Mudanai S, Li F, Samavedam SB, Tobin PJ, Kang CS, Nieh R, Lee JC, Register LF, Banerjee SK. Interfacial defect states in HfO2 and ZrO2 nMOS capacitors Ieee Electron Device Letters. 23: 728-730. DOI: 10.1109/Led.2002.805753  1
2002 Chen W, Register LF, Banerjee SK. Simulation of quantum effects along the channel of ultrascaled Si-based MOSFETs Ieee Transactions On Electron Devices. 49: 652-657. DOI: 10.1109/16.992875  1
2002 Kar GS, Maikap S, Banerjee SK, Ray SK. Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal–oxide semiconductor field-effect transistors Semiconductor Science and Technology. 17: 938-941. DOI: 10.1088/0268-1242/17/9/306  0.56
2002 Kar GS, Maikap S, Ray SK, Banerjee SK, Chakrabarti NB. Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer Semiconductor Science and Technology. 17: 471-475. DOI: 10.1088/0268-1242/17/5/311  0.56
2002 Ngai T, Chen X, Chen J, Banerjee SK. Improving SiO2/SiGe interface of SiGe p-metal-oxide-silicon field-effect transistors using water vapor annealing Applied Physics Letters. 80: 1773-1775. DOI: 10.1063/1.1445806  1
2002 Kar GS, Maikap S, Banerjee SK, Ray SK. Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers Electronics Letters. 38: 141-142. DOI: 10.1049/El:20020095  0.56
2002 Chen Y, Li D, Wang G, Lin L, Oak S, Shrivastav G, Tasch AF, Banerjee SK. Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas Journal of Computational Electronics. 1: 241-245. DOI: 10.1023/A:1020789811331  0.92
2002 Shrivastav G, Li D, Chen Y, Wang G, Lin L, Oak S, Tasch AF, Banerjee SK. An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials Journal of Computational Electronics. 1: 247-250. DOI: 10.1023/A:1020741928169  0.92
2002 Kar GS, Dhar A, Bera LK, Ray SK, John S, Banerjee SK. Effect of carbon on lattice strain and hole mobility in Si1-xGex alloys Journal of Materials Science: Materials in Electronics. 13: 49-55. DOI: 10.1023/A:1013103232208  0.56
2002 Wang X, Kencke DL, Liu KC, Register LF, Banerjee SK. Band alignments in sidewall strained Si/strained SiGe heterostructures Solid-State Electronics. 46: 2021-2025. DOI: 10.1016/S0038-1101(02)00247-2  1
2001 Kim DW, Prins F, Ko KS, Lee CH, Kwong DL, Banerjee SK. The Characterization of Initial Growth of Polycrystalline Silicon Germanium Films on Zirconium Oxide Mrs Proceedings. 686: 217-222. DOI: 10.1557/Proc-686-A9.2  1
2001 Jayanarayanan S, Prins F, Chen X, Banerjee S. Enhanced mobility in 100 nm strained SiGe vertical P-MOSFETs fabricated by UHVCVD Mrs Proceedings. 686: 75-79. DOI: 10.1557/Proc-686-A2.8  1
2001 Kim DW, Kim YH, Chen X, Lee CH, Song SC, Prins FE, Kwong DL, Banerjee SK. Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition Journal of Vacuum Science & Technology B. 19: 1104-1108. DOI: 10.1116/1.1387453  1
2001 Mudanai S, Register LF, Tasch AF, Banerjee SK. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147. DOI: 10.1109/55.910624  1
2001 Chen X, Liu KC, Ouyang QC, Jayanarayanan SK, Banerjee SK. Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Ieee Transactions On Electron Devices. 48: 1975-1980. DOI: 10.1109/16.944185  1
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  1
2001 Maikap S, Ray SK, Banerjee SK, Maiti CK. Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers Semiconductor Science and Technology. 16: 160-163. DOI: 10.1088/0268-1242/16/3/307  0.56
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Vertical p-type high-mobility heterojunction metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 3334-3336. DOI: 10.1063/1.1375004  1
2001 Ngai T, Qi WJ, Sharma R, Fretwell JL, Chen X, Lee JC, Banerjee SK. Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric Applied Physics Letters. 78: 3085-3087. DOI: 10.1063/1.1372204  1
2001 Chen X, Liu KC, Jayanarayanan SK, Banerjee S. Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 78: 377-379. DOI: 10.1063/1.1342038  1
2001 Ray SK, Kar GS, Banerjee SK. Characteristics of UHVCVD grown Si/Si1−x−yGexCy/Si quantum well heterostructure Applied Surface Science. 182: 361-365. DOI: 10.1016/S0169-4332(01)00449-4  0.56
2001 Ray SK, Maikap S, Samanta SK, Banerjee SK, Maiti CK. Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers Solid-State Electronics. 45: 1951-1955. DOI: 10.1016/S0038-1101(01)00239-8  0.56
2001 Chen X, Liu KC, Ray S, Banerjee SK. Bandgap engineering in vertical P-MOSFETs Solid-State Electronics. 45: 1939-1943. DOI: 10.1016/S0038-1101(01)00237-4  1
2001 Kar GS, Ray SK, Kim T, Banerjee SK, Chakrabarti NB. Estimation of hole mobility in strained Si1-xGex buried channel heterostructure PMOSFET Solid-State Electronics. 45: 669-676. DOI: 10.1016/S0038-1101(01)00096-X  0.92
2001 Chen X, Ouyang Q, Jayanarayanan SK, Prins FE, Banerjee S. Asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor Solid-State Electronics. 45: 281-285. DOI: 10.1016/S0038-1101(01)00013-2  1
2000 Chen X, Wang X, Liu K, Kim D, Banerjee S. Scanning Tunneling Spectroscopy Investigation of the Strained Si1−xGex-on-Si Band Offsets Mrs Proceedings. 618: 219-224. DOI: 10.1557/Proc-618-219  1
2000 Chen X, Wang XD, Liu KC, Kim DW, Banerjee SK. Scanning tunneling spectroscopy investigation of the strained Si1-xGex band structure Journal of Materials Research. 15: 1257-1260. DOI: 10.1557/Jmr.2000.0183  1
2000 Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577  1
2000 Mudanai S, Fan YY, Ouyang Q, Tasch AF, Banerjee SK. Modeling of direct tunneling current through gate dielectric stacks Ieee Transactions On Electron Devices. 47: 1851-1857. DOI: 10.1109/16.870561  1
2000 Quinones EJ, John S, Ray SK, Banerjee SK. Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs Ieee Transactions On Electron Devices. 47: 1715-1725. DOI: 10.1109/16.861582  1
2000 Maikap S, Ray SK, John S, Banerjee SK, Maiti CK. Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures Semiconductor Science and Technology. 15: 761-765. DOI: 10.1088/0268-1242/15/7/317  0.56
2000 Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724. DOI: 10.1063/1.1311304  1
2000 Chen X, Ouyang Q, Onsongo DM, Jayanarayanan SK, Tasch A, Banerjee SK. SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap Applied Physics Letters. 77: 1656-1658. DOI: 10.1063/1.1309018  1
2000 Kar GS, Dhar A, Ray SK, John S, Banerjee SK. Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition Journal of Applied Physics. 88: 2039-2042. DOI: 10.1063/1.1305927  0.56
2000 Ngai T, Qi WJ, Sharma R, Fretwell J, Chen X, Lee JC, Banerjee SK. Electrical properties of ZrO2 gate dielectric on SiGe Applied Physics Letters. 76: 502-504. DOI: 10.1063/1.125801  1
2000 Maikap S, Bera LK, Ray SK, John S, Banerjee SK, Maiti CK. Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor Solid-State Electronics. 44: 1029-1034. DOI: 10.1016/S0038-1101(99)00327-5  0.56
2000 Shi Z, Chen X, Onsongo D, Quinones EJ, Banerjee SK. Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Solid-State Electronics. 44: 1223-1228. DOI: 10.1016/S0038-1101(00)00031-9  1
2000 Kencke DL, Ouyang Q, Chen W, Wang H, Mudanai S, Tasch A, Banerjee SK. Tinkering with the well-tempered MOSFET: Source-channel barrier modulation with high-permittivity dielectrics Superlattices and Microstructures. 27: 207-214. DOI: 10.1006/Spmi.1999.0803  1
1999 Sharma R, Fretwell JL, Ngai T, Banerjee S. Remote plasma-assisted deposition of gate quality oxides without the use of a preoxidation step Journal of the Electrochemical Society. 146: 2229-2234. DOI: 10.1149/1.1391919  1
1999 Sharma R, Fretwell JL, Ngai T, Banerjee S. Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation Journal of Vacuum Science & Technology B. 17: 460-464. DOI: 10.1116/1.590576  1
1999 Quinones E, Ray SK, Liu KC, Banerjee S. Enhanced mobility PMOSFETs using tensile-strained Si/sub 1-y/C y layers Ieee Electron Device Letters. 20: 338-340. DOI: 10.1109/55.772369  1
1999 Mudanai S, Chindalore GL, Shih W-, Wang H, Ouyang Q, Tasch AF, Maziar CM, Banerjee SK. Models for electron and hole mobilities in MOS accumulation layers Ieee Transactions On Electron Devices. 46: 1749-1759. DOI: 10.1109/16.777166  0.92
1999 John S, Ray SK, Quinones E, Banerjee SK. Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge Applied Physics Letters. 74: 2076-2078. DOI: 10.1063/1.123762  0.68
1999 John S, Ray SK, Quinones E, Oswal SK, Banerjee SK. Heterostructure P-channel metal-oxide-semiconductor transistor utilizing a Si1-x-yGexCy channel Applied Physics Letters. 74: 847-849. DOI: 10.1063/1.123386  0.68
1998 Srinivasa R, Agarwal V, Liu J, Downey DF, Banerjee S. Annealing studies on low energy As+ and As2+ implants Mrs Proceedings. 525: 257-262. DOI: 10.1557/Proc-525-257  0.8
1998 Kencke DL, Richart R, Garg S, Banerjee SK. A multilevel approach toward quadrupling the density of flash memory Ieee Electron Device Letters. 19: 86-88. DOI: 10.1109/55.661173  1
1998 Liu KC, Ray SK, Oswal SK, Banerjee SK. A deep submicron Si/sub 1-x/Ge/sub x//Si vertical PMOSFET fabricated by Ge ion implantation Ieee Electron Device Letters. 19: 13-15. DOI: 10.1109/55.650338  1
1998 Sultan A, Banerjee S, List S, McNeil V. An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions Journal of Applied Physics. 83: 8046-8050. DOI: 10.1063/1.367897  0.8
1998 Ray SK, Bera LK, Maiti CK, John S, Banerjee SK. Electrical characteristics of plasma oxidized Si1−x−yGexCy metal–oxide–semiconductor capacitors Applied Physics Letters. 72: 1250-1252. DOI: 10.1063/1.121028  0.56
1998 Ray SK, Bera LK, Maiti CK, John S, Banerjee SK. MOS capacitor characteristics of plasma oxide on partially strained SiGeC films Thin Solid Films. 332: 375-378. DOI: 10.1016/S0040-6090(98)01040-2  0.56
1997 Sharma R, Fretwell JL, Doris B, Banerjee S. Use of metal-oxide-semiconductor capacitors in the analysis of low-temperature epitaxial Si films deposited by remote plasma-enhanced chemical vapor deposition Journal of Applied Physics. 82: 2684-2689. DOI: 10.1063/1.366085  0.8
1996 Craig M, Sultan A, Reddy K, Banerjee S, Ishida E, Larson L. Dose rate and thermal budget optimization for ultrashallow junctions formed by low‐energy (2–5 keV) ion implantation Journal of Vacuum Science & Technology B. 14: 255-259. DOI: 10.1116/1.588457  0.8
1996 Li C, John S, Quinones E, Banerjee SK. Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6 Journal of Vacuum Science and Technology. 14: 170-183. DOI: 10.1116/1.579915  0.68
1996 Sharma R, Fretwell J, Doris B, Banerjee S. Molybdenum contamination in low‐temperature epitaxial silicon films grown by remote plasma chemical vapor deposition Applied Physics Letters. 69: 109-111. DOI: 10.1063/1.118090  0.8
1996 Sultan A, Banerjee S, List S, Rodder M. Role of silicon surface in the removal of point defects in ultrashallow junctions Applied Physics Letters. 69: 2228-2230. DOI: 10.1063/1.117136  0.8
1996 Tasch AF, Banerjee SK. Ultra-shallow junction formation in silicon using ion implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 112: 177-183. DOI: 10.1016/0168-583X(95)01246-X  0.92
1995 Mahajan A, Kellerman BK, Heitzinger JM, Banerjee S, Tasch A, White JM, Ekerdt JG. Surface chemistry of diethylsilane and diethylgermane on Ge(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1461-1468. DOI: 10.1116/1.579687  1
1995 Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ. Adsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 1819-1825. DOI: 10.1116/1.579665  1
1995 Hu CY, Kencke DL, Banerjee SK, Richart R, Bandyopadhyay B, Moore B, Ibok E, Garg S. A Convergence Scheme for Over-Erased Flash EEPROM's Using Substrate-Bias-Enhanced Hot Electron Injection Ieee Electron Device Letters. 16: 500-502. DOI: 10.1109/55.468280  1
1995 Sultan A, Craig M, Reddy K, Banerjee S, Ishida E, Maillot P, Neil T, Larson L. The dependence of ultrashallow junction depths on impact dose rates Applied Physics Letters. 67: 1223-1225. DOI: 10.1063/1.115014  0.8
1995 Pacheco KA, Ferguson BA, Li C, John S, Banerjee S, Mullins CB. Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition Applied Physics Letters. 67: 2951. DOI: 10.1063/1.114822  1
1995 Hu C‐, Kencke DL, Banerjee S, Bandyopadhyay B, Ibok E, Garg S. Determining effective dielectric thicknesses of metal‐oxide‐semiconductor structures in accumulation mode Applied Physics Letters. 66: 1638-1640. DOI: 10.1063/1.113877  0.92
1995 Sultan A, Batra S, Lux GE, Banerjee S. Modeling of boron diffusion in polysilicon-on-silicon structures using a rapid thermal anneal step for ultra-shallow junction formation Materials Science and Engineering B-Advanced Functional Solid-State Materials. 32: 25-32. DOI: 10.1016/0921-5107(94)01156-7  0.8
1995 Li C, John S, Banerjee S. Low temperature heteroepitaxial growth of Si 1–x Ge x -on-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si 2 H 6 and Ge 2 H 6 Journal of Electronic Materials. 24: 875-884. DOI: 10.1007/Bf02653336  0.8
1994 Sultan A, Bhattacharya S, Batra S, Banerjee S. Boltzmann–Matano analysis based model for boron diffusion from polysilicon into single crystal silicon Journal of Vacuum Science & Technology B. 12: 391-394. DOI: 10.1116/1.587133  0.8
1994 Manna I, Jung L, Bhattacharya S, Banerjee SK. New pin MOSFET structure for hot carrier suppression Electronics Letters. 30: 457-459. DOI: 10.1049/El:19940275  0.6
1993 Lian S, Fowler B, Krishnan S, Jung L, Li C, Manna I, Samara D, Banerjee S. Photo‐enhanced chemical vapor deposition: System design considerations Journal of Vacuum Science and Technology. 11: 2914-2923. DOI: 10.1116/1.578668  0.8
1993 Batra S, Manning M, Dennison C, Sultan A, Bhattacharya S, Park K, Banerjee SK, Lobo M, Lux G, Kirschbaum C, Norberg J, Smith T, Mulvaney B. Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si Journal of Applied Physics. 73: 3800-3804. DOI: 10.1063/1.352886  0.6
1993 Murtaza SS, Qian R, Kinosky D, Mayer R, Tasch AF, Banerjee S, Campbell JC. Room-temperature measurements of strong electroabsorption effect in Ge xSi1-x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 62: 1976-1978. DOI: 10.1063/1.109508  1
1993 Batra S, Picone K, Park KH, Bhattacharya S, Banerjee SK, Lee J, Manning M, Dennison C. Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes Solid-State Electronics. 36: 955-960. DOI: 10.1016/0038-1101(93)90110-C  0.8
1993 Sultan A, Lobo M, Bhattacharya S, Banerjee S, Batra S, Manning M, Dennison C. A physically based phenomenological model using Boltzmann-Matano analysis for boron diffusion from polycrystalline Si into single crystal Si Journal of Electronic Materials. 22: 1129-1135. DOI: 10.1007/Bf02817536  0.8
1993 Batra S, Jeng N, Sultan A, Picone K, Bhattacharya S, Park K, Banerjee S, Kao D, Manning M, Dennison C. Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, As-deposited polycrystalline Si-on-single crystal Si diodes Journal of Electronic Materials. 22: 551-554. DOI: 10.1007/Bf02661629  0.8
1992 Bhattacharya S, Lobo M, Jung L, Banerjee S, Reuss R, Batra S, Park K, Hu G. Control of Polysilicon Emitter Bipolar Transistor Characteristics by Rapid Thermal or Furnace Anneal of the Polysilicon/Silicon Interface Mrs Proceedings. 283. DOI: 10.1557/Proc-283-721  0.8
1992 Sultan A, Batra S, Lobo M, Park K, Banerjee S. Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers Mrs Proceedings. 283. DOI: 10.1557/Proc-283-653  0.8
1992 Fowler B, Lian S, Krishnan S, Li C, Jung L, Samara D, Manna I, Banerjee S. Modeling of Silicon Deposition Yield at Low Temperature by ArF Excimer Laser Photolysis of Disilane Mrs Proceedings. 263: 203. DOI: 10.1557/Proc-263-203  0.8
1992 Batra S, Park K, Lobo M, Banerjee S. Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing Mrs Proceedings. 230: 201. DOI: 10.1557/Proc-230-201  0.8
1992 Fowler B, Lian S, Krishnan S, Jung L, Li C, Banerjee S. ArF Excimer Laser‐Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane Journal of the Electrochemical Society. 139: 2314-2318. DOI: 10.1149/1.2221222  0.8
1992 Lian S, Fowler B, Krishnan S, Jung L, Li C, Banerjee S. Silicon Homoepitaxial Films Grown by Photo-Enhanced Chemical Vapor Deposition from Si2h6 Journal of the Electrochemical Society. 139: 2273-2277. DOI: 10.1149/1.2221214  0.8
1992 Bhattacharya S, Banerjee SK, Lee JC, Tasch AF, Chatterjee A. Parametric Study of Latchup Immunity of Deep Trench-Isolated, Bulk, Nonepitaxial CMOS Ieee Transactions On Electron Devices. 39: 921-931. DOI: 10.1109/16.127484  1
1992 Tsai C, Li KH, Kinosky DS, Qian RZ, Hsu TC, Irby JT, Banerjee SK, Tasch AF, Campbell JC, Hance BK, White JM. Correlation between silicon hydride species and the photoluminescence intensity of porous silicon Applied Physics Letters. 60: 1700-1702. DOI: 10.1063/1.107190  1
1992 Batra S, Park KH, Banerjee SK, Lux GE, Kirschbaum CL, Norberg JC, Smith TC, Elliott JK, Mulvaney BJ. Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems Journal of Electronic Materials. 21: 227-231. DOI: 10.1007/Bf02655841  1
1992 Krishnan S, Lian S, Fowler B, Jung L, Li C, Banerjee S. Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si 2 H 6 Journal of Electronic Materials. 21: 559-562. DOI: 10.1007/Bf02655421  0.8
1991 Batra S, Park K, Banerjee S, Smith T, Mulvaney B. Lateral Uniformity of Ultra-Shallow Junctions Formed by Rapid Thermal Annealing in Polysilicon-on-Silicon Systems Mrs Proceedings. 224: 329. DOI: 10.1557/Proc-224-329  0.8
1991 Fowler B, Lian S, Krishnan S, Jung L, Banerjee S. ArF Excimer Laser-Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane Mrs Proceedings. 224. DOI: 10.1557/Proc-224-323  0.8
1991 Park K, Batra S, Banerjee S, Lux G, Manukonda R. Comparison of Arsenic and Boron Diffusion in Polycrystalline/Single‐Crystal Silicon Systems Journal of the Electrochemical Society. 138: 545-549. DOI: 10.1149/1.2085626  0.8
1991 Kinosky D, Qian R, Irby J, Hsu T, Anthony B, Banerjee S, Tasch A, Magee C, Grove CL. Low-temperature growth of GexSi1-x/Si heterostructures on Si(100) by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 59: 817-819. DOI: 10.1063/1.105272  1
1991 Park K, Batra S, Banerjee S. Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing Applied Physics Letters. 58: 2414-2416. DOI: 10.1063/1.104888  0.8
1991 Lian S, Fowler B, Bullock D, Banerjee S. ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6 at 330°C Applied Physics Letters. 58: 514-516. DOI: 10.1063/1.104599  1
1991 Park K, Batra S, Banerjee S, Lux G. Ultra-shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources Journal of Electronic Materials. 20: 261-265. DOI: 10.1007/Bf02651902  0.8
1990 Fowler B, Lian T, Bullock D, Banerjee S. Silicon Homoepitaxy at 300°C Using ArF Excimer Laser Photolysis of Disilane Mrs Proceedings. 201. DOI: 10.1557/Proc-201-153  0.8
1990 Batra S, Park K, Banerjee S, Sundaresan R. Comparative Studies of Furnace and Rapid Thermal Passivation for Accumulation and Inversion Mode Polysilicon-On-Oxide Mosfets. Mrs Proceedings. 182. DOI: 10.1557/Proc-182-393  0.8
1990 Park K, Batra S, Banerjee S, Lux G. Comparison of Amorphous and Polycrystalline Silicon Films as a Solid Diffusion Source for Advanced VLSI Processes Mrs Proceedings. 182: 159. DOI: 10.1557/Proc-182-159  0.8
1990 Park K, Batra S, Banerjee S, Lux G, Manukonda R. Diffusion of as and B in Polysilicon/ Single Crystal Silicon Systems Mrs Proceedings. 182: 141. DOI: 10.1557/Proc-182-141  0.8
1990 Hsu T, Anthony B, Breaux L, Qian R, Banerjee S, Magee C, Harrington W. Defect microstructure in single crystal silicon thin films grown at 150°C–350°C by the remote plasma-enhanced chemical vapor deposition Journal of Electronic Materials. 19: 1043-1050. DOI: 10.1007/Bf02651979  0.8
1990 Anthony B, Hsu T, Breaux L, Qian R, Banerjee S. Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy Journal of Electronic Materials. 19: 1027-1032. DOI: 10.1007/Bf02651977  0.8
1989 Shin H, Tasch AF, Maziar CM, Banerjee SK. A New Approach to Verify and Derive a Transverse-Field-Dependent Mobility Model for Electrons in MOS Inversion Layers Ieee Transactions On Electron Devices. 36: 1117-1124. DOI: 10.1109/16.24356  1
1988 Banerjee S, Sundaresan R, Shichijo H, Malhi S. Hot-electron degradation of n-channel polysilicon MOSFETs Ieee Transactions On Electron Devices. 35: 152-157. DOI: 10.1109/16.2434  0.8
1988 Banerjee S, Coleman D, Richardson W, Shah A. Leakage mechanisms in the trench transistor DRAM cell Ieee Transactions On Electron Devices. 35: 108-116. DOI: 10.1109/16.2425  0.8
1987 Banerjee S, Bordelon DM. A Model for the Trench Transistor Ieee Transactions On Electron Devices. 34: 2485-2492. DOI: 10.1109/T-Ed.1987.23339  1
1987 Banerjee S, Richardson W, Coleman J, Chatterjee A. A new three-terminal tunnel device Ieee Electron Device Letters. 8: 347-349. DOI: 10.1109/Edl.1987.26655  0.8
1986 Shah AH, Gallia JD, Davis HE, Elahy M, Banerjee SK, Pollack GP, Richardson WF, Bordelon DM, Malhi SDS, Chatterjee PK, Wang CP, Womack RH, Shichijo H, Pilch CJ, Tran B. A 4-Mbit DRAM with Trench-Transistor Cell Ieee Journal of Solid-State Circuits. 21: 618-626. DOI: 10.1109/Jssc.1986.1052586  1
1986 Shichijo H, Banerjee SK, Malhi SDS, Pollack GP, Richardson WF, Bordelon DM, Womack RH, Elahy M, Wang CP, Gallia J, Davis HE, Shah AH, Chatterjee K. Trench Transistor DRAM Cell Ieee Electron Device Letters. 7: 119-121. DOI: 10.1109/Edl.1986.26313  1
1984 Pollack GP, Richardson WF, Malhi SDS, Bonifield T, Shichijo H, Banerjee S, Elahy M, Shah AH, Womack R, Chatterjee PK. Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source Ieee Electron Device Letters. 5: 468-470. DOI: 10.1109/Edl.1984.25991  0.8
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