Leonard F. Register - Publications

Affiliations: 
Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

148 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Jadaun P, Register LF, Banerjee SK. Rational design principles for giant spin Hall effect in -transition metal oxides. Proceedings of the National Academy of Sciences of the United States of America. PMID 32424094 DOI: 10.1073/Pnas.1922556117  0.68
2017 Chen K, Roy A, Rai A, Valsaraj A, Meng X, He F, Xu X, Register LF, Banerjee S, Wang Y. Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide. Acs Applied Materials & Interfaces. PMID 29226670 DOI: 10.1021/Acsami.7B15478  0.64
2016 Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646  0.84
2016 Majumder S, Guchhait S, Dey R, Register LF, Banerjee SK. Large magnetoresistance at room temperature in ferromagnet/Topological insulator contacts Ieee Transactions On Nanotechnology. 15: 671-674. DOI: 10.1109/Tnano.2016.2572003  0.84
2016 Valsaraj A, Register LF, Banerjee SK, Chang J. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 230-233. DOI: 10.1109/SISPAD.2015.7292301  0.84
2015 Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314  0.84
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  0.84
2015 Pramanik T, Roy U, Register LF, Banerjee SK. Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet Ieee Transactions On Nanotechnology. 14: 883-888. DOI: 10.1109/Tnano.2015.2457833  0.84
2015 Hsu W, Mantey J, Register LF, Banerjee SK. On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2434615  0.84
2015 Crum DM, Valsaraj A, Register LF, Banerjee SK, Sahu B, Krivakopic Z, Banna S, Nayak D. Impact of gate oxide complex band structure on n-channel III-V FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 250-253. DOI: 10.1109/SISPAD.2015.7292306  0.84
2015 Wu X, Mou X, Register LF, Banerjee SK. Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 124-127. DOI: 10.1109/SISPAD.2015.7292274  0.84
2015 Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737  0.68
2015 Tutuc E, Fallahazad B, Kang S, Lee K, Kim K, Movva HCP, Mou X, Corbet CM, Register LF, Banerjee SK, Taniguchi T, Watanabe K. Gate tunable resonant tunneling in graphene-based heterostructures and device applications Device Research Conference - Conference Digest, Drc. 2015: 269-270. DOI: 10.1109/DRC.2015.7175677  0.84
2015 Rai A, Valsaraj A, Movva HCP, Roy A, Tutuc E, Register LF, Banerjee SK. Interfacial-oxygen-vacancy mediated doping of MoS2 by high-κ dielectrics Device Research Conference - Conference Digest, Drc. 2015: 189-190. DOI: 10.1109/DRC.2015.7175626  0.84
2015 Roy U, Kencke DL, Pramanik T, Register LF, Banerjee SK. Write error rate in spin-transfer-torque random access memory including micromagnetic effects Device Research Conference - Conference Digest, Drc. 2015: 147-148. DOI: 10.1109/DRC.2015.7175598  0.84
2015 Hsu W, Mantey J, Register LF, Banerjee SK. Modulation-doped gate-normal tunnel FET for improved turn-on abruptness Device Research Conference - Conference Digest, Drc. 2015: 103-104. DOI: 10.1109/DRC.2015.7175576  0.84
2015 Mou X, Register LF, Macdonald AH, Banerjee SK. Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235413  0.84
2015 Valsaraj A, Chang J, Rai A, Register LF, Banerjee SK. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide 2d Materials. 2. DOI: 10.1088/2053-1583/2/4/045009  0.84
2015 Roy U, Dey R, Pramanik T, Ghosh B, Register LF, Banerjee SK. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator Journal of Applied Physics. 117. DOI: 10.1063/1.4918900  0.84
2015 Hsu W, Mantey J, Register LF, Banerjee SK. Comment on "assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor" [Appl. Phys. Lett. 105, 082108 (2014)] Applied Physics Letters. 106. DOI: 10.1063/1.4905865  0.84
2015 Reddy D, Register LF, Banerjee SK. Bilayer pseudospin field effect transistor Cmos and Beyond: Logic Switches For Terascale Integrated Circuits. 175-206. DOI: 10.1017/CBO9781107337886.011  0.84
2015 Mou X, Register LF, Banerjee SK. Ultralow-power pseudospintronic devices via exciton condensation in coupled two-dimensional material systems Nanoscale Materials and Devices For Electronics, Photonics and Solar Energy. 31-91. DOI: 10.1007/978-3-319-18633-7_2  0.84
2014 Zhai Y, Mathew L, Rao R, Palard M, Chopra S, Ekerdt JG, Register LF, Banerjee SK. High-performance vertical gate-all-around silicon nanowire FET with high-κ/metal gate Ieee Transactions On Electron Devices. 61: 3896-3900. DOI: 10.1109/Ted.2014.2353658  0.84
2014 Mou X, Register LF, Banerjee SK. Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 309-312. DOI: 10.1109/SISPAD.2014.6931625  0.84
2014 Crum DM, Valsaraj A, Register LF, Banerjee SK. Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 109-112. DOI: 10.1109/SISPAD.2014.6931575  0.84
2014 Valsaraj A, Register LF, Banerjee SK, Chang J. Density-functional-theory-based study of monolayer MoS2on oxide International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 73-76. DOI: 10.1109/SISPAD.2014.6931566  0.84
2014 Valsaraj A, Chang J, Register LF, Banerjee SK. Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/DRC.2014.6872310  0.84
2014 Dey R, Pramanik T, Roy A, Rai A, Guchhait S, Sonde S, Movva HCP, Colombo L, Register LF, Banerjee SK. Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 Applied Physics Letters. 104. DOI: 10.1063/1.4881721  0.84
2014 Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767  0.84
2014 Chang J, Register LF, Banerjee SK. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors Journal of Applied Physics. 115. DOI: 10.1063/1.4866872  0.84
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 420-423. DOI: 10.1109/SISPAD.2013.6650664  0.84
2013 Chang J, Register LF, Banerjee SK. Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 408-411. DOI: 10.1109/SISPAD.2013.6650661  0.84
2013 Mou X, Register LF, Banerjee SK. Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET) Technical Digest - International Electron Devices Meeting, Iedm. 4.7.1-4.7.4. DOI: 10.1109/IEDM.2013.6724563  0.84
2013 Chang J, Register LF, Banerjee SK. Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance Device Research Conference - Conference Digest, Drc. 75-76. DOI: 10.1109/DRC.2013.6633800  0.84
2013 Chang J, Register LF, Banerjee SK. Atomistic full-band simulations of monolayer MoS2 transistors Applied Physics Letters. 103. DOI: 10.1063/1.4837455  0.84
2013 Hsu W, Mantey J, Register LF, Banerjee SK. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor Applied Physics Letters. 103. DOI: 10.1063/1.4819458  0.84
2013 Jadaun P, Movva HCP, Register LF, Banerjee SK. Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications Journal of Applied Physics. 114. DOI: 10.1063/1.4817498  0.84
2013 Roy U, Pramanik T, Tsoi M, Register LF, Banerjee SK. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory Journal of Applied Physics. 113. DOI: 10.1063/1.4811230  0.84
2013 Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678  0.84
2012 Register LF, Mou X, Reddy D, Jung W, Sodeman I, Pesin D, Hassibi A, MacDonald AH, Banerjee SK. Bilayer pseudo-spin Field Effect Transistor (BiSFET): Concepts and critical issues for realization Ecs Transactions. 45: 3-14. DOI: 10.1149/1.3700447  0.84
2012 David JK, Register LF, Banerjee SK. Semiclassical Monte Carlo analysis of graphene FETs Ieee Transactions On Electron Devices. 59: 976-982. DOI: 10.1109/Ted.2012.2184116  0.84
2012 Chang J, Register LF, Banerjee SK. Possible applications of topological insulator thin films for tunnel FETs Device Research Conference - Conference Digest, Drc. 31-32. DOI: 10.1109/DRC.2012.6256984  0.84
2012 Banerjee SK, Register LF, Tutuc E, Reddy D, Kim S, Basu D, Corbet C, Colombo L, Carpenter G, MacDonald AH. Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2012.6256938  0.84
2012 Reddy D, Register LF, Banerjee SK. Bilayer graphene vertical tunneling field effect transistor Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2012.6256932  0.84
2012 Chang J, Register LF, Banerjee SK. Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 112. DOI: 10.1063/1.4770324  0.84
2012 Jadaun P, Sahu BR, Register LF, Banerjee SK. Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects Solid State Communications. 152: 1497-1502. DOI: 10.1016/J.Ssc.2012.04.044  0.84
2012 David JK, Register LF, Banerjee SK. A path-sum Monte Carlo approach for many-electron systems within a tight-binding basis Journal of Computational Electronics. 11: 172-181. DOI: 10.1007/S10825-012-0393-Z  0.84
2011 Jadaun P, Banerjee SK, Register LF, Sahu B. Density functional theory based study of graphene and dielectric oxide interfaces. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 23: 505503. PMID 22119858 DOI: 10.1088/0953-8984/23/50/505503  0.84
2011 Chang J, Register LF, Banerjee SK, Sahu B. Thin film electronic properties of ternary topological insulator Materials Research Society Symposium Proceedings. 1393: 1-6. DOI: 10.1557/Opl.2012.724  0.84
2011 Register LF, Basu D, Reddy D. From coherent states in adjacent graphene layers toward low-power logic circuits Advances in Condensed Matter Physics. 2011. DOI: 10.1155/2011/258731  0.84
2011 Lee SH, Nainani A, Oh J, Jeon K, Kirsch PD, Majhi P, Register LF, Banerjee SK, Jammy R. On-state performance enhancement and channel-direction-dependent performance of a biaxial compressive strained Si0.5Ge0.5 quantum-well pMOSFET along 〈 110 〉 and 〈 100 〉 channel directions Ieee Transactions On Electron Devices. 58: 985-995. DOI: 10.1109/Ted.2011.2105876  0.84
2011 Liu KM, Register LF, Banerjee SK. Quantum transport simulation of strain and orientation effects in sub-20 nm silicon-on-insulator FinFETs Ieee Transactions On Electron Devices. 58: 4-10. DOI: 10.1109/Ted.2010.2084090  0.84
2011 Register LF, Hasan MM, Banerjee SK. Stepped broken-gap heterobarrier tunneling field-effect transistor for ultralow power and high speed Ieee Electron Device Letters. 32: 743-745. DOI: 10.1109/Led.2011.2126038  0.84
2011 Chang J, Jadaun P, Register LF, Banerjee SK, Sahu B. Dielectric capping effects on binary and ternary topological insulator surface states Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155105  0.84
2011 Basu D, Register LF, MacDonald AH, Banerjee SK. Effect of interlayer bare tunneling on electron-hole coherence in graphene bilayers Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035449  0.84
2011 Chang J, Register LF, Banerjee SK, Sahu B. Density functional study of ternary topological insulator thin films Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.235108  0.84
2011 Reddy D, Register LF, Carpenter GD, Banerjee SK. Graphene field-effect transistors Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/31/313001  0.84
2011 David JK, Register LF, Banerjee SK. 3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs Solid-State Electronics. 61: 7-12. DOI: 10.1016/J.Sse.2010.12.013  0.84
2010 Register LF, Basu D, Hasan MM, Reddy D, Shi N, Banerjee SK. Changing front-end dielectric requirements for end-of-the-roadmap CMOS and beyond Ecs Transactions. 28: 3-17. DOI: 10.1149/1.3372560  0.84
2010 Chang J, Kapoor AK, Register LF, Banerjee SK. Analytical model of short-channel double-gate JFETs Ieee Transactions On Electron Devices. 57: 1846-1855. DOI: 10.1109/Ted.2010.2051193  0.84
2010 Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280  0.84
2010 Banerjee SK, Register LF, Tutuc E, Basu D, Kim S, Reddy D, MacDonald AH. Graphene for CMOS and beyond CMOS applications Proceedings of the Ieee. 98: 2032-2046. DOI: 10.1109/JPROC.2010.2064151  0.84
2010 Basu D, Register LF, Reddy D, MacDonald AH, Banerjee SK. Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075409  0.84
2010 Register LF, Shi N. Schrödinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering Journal of Computational Electronics. 9: 201-205. DOI: 10.1007/S10825-010-0320-0  0.84
2009 Zaman RJ, Matthews K, Hasan MM, Xiong W, Register LF, Banerjee SK. A novel low-cost trigate process suitable for embedded CMOS 1T-1C pseudo-SRAM application Ieee Transactions On Electron Devices. 56: 448-455. DOI: 10.1109/Ted.2008.2011850  0.84
2009 Chen H, Register LF, Banerjee SK. Resonant Injection Enhanced Field Effect Transistor for low voltage switching: Concept and quantum transport simulation International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290247  0.84
2009 Basu D, Register LF, Gilbert MJ, Banerjee SK. Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290220  0.84
2009 Shi N, Register LF, Banerjee SK. Semiclassical Monte Carlo with quantum-confinement enhanced scattering: Quantum correction and application to short-channel device performance vs. mobility for biaxial-tensile-strained silicon nMOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290202  0.84
2009 Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362  0.84
2009 Reddy D, Register LF, Tutuc E, MacDonald A, Banerjee SK. Bilayer pseudoSpin field effect transistor (BiSFET): A proposed logic device and circuits Device Research Conference - Conference Digest, Drc. 67-68. DOI: 10.1109/DRC.2009.5354891  0.84
2008 Shi N, Register LF, Banerjee SK. On strain and scattering in deeply-scaled n-channel MOSFETs: A quantum-corrected semiclassical Monte Carlo analysis Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796846  0.84
2008 Jain N, Tutuc E, Banerjee SK, Register LF. Performance analysis of germanium nanowire tunneling field effect transistors Device Research Conference - Conference Digest, Drc. 99-100. DOI: 10.1109/DRC.2008.4800753  0.84
2008 Liu KM, Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors Journal of Applied Physics. 104. DOI: 10.1063/1.3031303  0.84
2008 Basu D, Gilbert MJ, Register LF, Banerjee SK, MacDonald AH. Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839330  0.84
2008 Chen W, Register LF, Banerjee SK. Schrödinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 103. DOI: 10.1063/1.2809403  0.84
2007 Register LF, Hasan MM, Li F, Banerjee SK. Efficient gate-capacitance and current modeling of high-κ gate stacks Ecs Transactions. 11: 347-361. DOI: 10.1149/1.2779573  0.84
2007 Fan XF, Register LF, Winstead B, Foisy MC, Chen W, Zheng X, Ghosh B, Banerjee SK. Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa Ieee Transactions On Electron Devices. 54: 291-296. DOI: 10.1109/Ted.2006.888667  0.84
2007 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 170-172. DOI: 10.1109/SISPAD.2006.282865  0.84
2007 Liu KM, Chen W, Register LF, Banerjee S. Schrödinger equation Monte Carlo-3D for simulation of nanoscale MOSFETs 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 1120-1125. DOI: 10.1109/NANO.2007.4601380  0.84
2006 Xia T, Register LF, Banerjee SK. Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors Ieee Transactions On Nanotechnology. 5: 80-83. DOI: 10.1109/Tnano.2006.869693  0.84
2006 Ganguly S, Register LF, MacDonald AH, Banerjee SK. Two-level voltage-controlled magnetization switch using a ferromagnetic semiconductor resonant-tunneling diode Ieee Transactions On Nanotechnology. 5: 30-36. DOI: 10.1109/Tnano.2005.861406  0.84
2006 Li F, Register LF, Hasan MM, Banerjee SK. A program for device model parameter extraction from gate capacitance and current of ultrathin SiO2 and high-κ gate stacks Ieee Transactions On Electron Devices. 53: 2118-2126. DOI: 10.1109/Ted.2006.880373  0.84
2006 Li F, Tseng HH, Register LF, Tobin PJ, Banerjee SK. Asymmetry in gate capacitance-voltage (C-V) behavior of ultrathin metal gate MOSFETs with HfO2 gate dielectrics Ieee Transactions On Electron Devices. 53: 1943-1946. DOI: 10.1109/Ted.2006.878013  0.84
2006 Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Physically based quantum - Mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1nm) SiO2 and high-k gate stacks Ieee Transactions On Electron Devices. 53: 1096-1106. DOI: 10.1109/Ted.2006.871877  0.84
2006 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of strained germanium nanoscale bulk pMOSFETs Ieee Transactions On Electron Devices. 53: 533-537. DOI: 10.1109/Ted.2005.863765  0.84
2006 Ganguly S, MacDonald AH, Register LF, Banerjee SK. Scattering dependence of bias-controlled magnetization switching in ferromagnetic resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.153314  0.84
2006 Zheng X, Chen W, Stroscio M, Register LF. Nonequillibrium Green's function analysis of interwell transport and scattering in monopolar lasers Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.245304  0.84
2006 Ganguly S, MacDonald AH, Register LF, Banerjee S. Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.033310  0.84
2005 Li F, Mudanai S, Register LF, Banerjee SK. A physically based compact gate C-V model for ultrathin (EOT ∼ 1 nm and below) gate dielectric MOS devices Ieee Transactions On Electron Devices. 52: 1148-1158. DOI: 10.1109/Ted.2005.848079  0.84
2005 Ghosh B, Wang X, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium n- and pMOSFETs Ieee Transactions On Electron Devices. 52: 547-553. DOI: 10.1109/Ted.2005.844736  0.84
2005 Ghosh B, Fan XF, Register LF, Banerjee SK. Monte Carlo study of germanium N- and P- MOSFETs Device Research Conference - Conference Digest, Drc. 2005: 81-82. DOI: 10.1109/DRC.2005.1553065  0.84
2005 Ganguly S, Register LF, Banerjee S, MacDonald AH. Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.245306  0.84
2005 Xia TS, Register LF, Banerjee SK. Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect Solid-State Electronics. 49: 860-864. DOI: 10.1016/J.Sse.2005.02.002  0.84
2004 Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/Ted.2004.828296  0.84
2004 Xia T, Register LF, Bonerjee SK. Complex band structure-based non-equilibrium Green's function (NEGF) transport studies for ultra-scaled carbon nanotube (CNT) transistors Device Research Conference - Conference Digest, Drc. 139-140. DOI: 10.1109/DRC.2004.1367823  0.84
2004 Xia TS, Register LF, Banerjee SK. Calculations and applications of the complex band structure for carbon nanotube field-effect transistors Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.045322  0.84
2004 Xia TS, Register LF, Banerjee SK. Quantum transport in carbon nanotube transistors: Complex band structure effects Journal of Applied Physics. 95: 1597-1599. DOI: 10.1063/1.1631747  0.84
2004 Register LF, Ezaki T. Modeling and simulation - Transport in nanoscale silicon-based FETs-II Technical Digest - International Electron Devices Meeting, Iedm. 595.  0.84
2003 Xia T, Register LF, Banerjee SK. Quantum transport in double-gate MOSFETs with complex band structure Ieee Transactions On Electron Devices. 50: 1511-1516. DOI: 10.1109/Ted.2003.813348  0.84
2003 Fan YY, Xiang Q, An J, Register LF, Banerjee SK. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance Ieee Transactions On Electron Devices. 50: 433-439. DOI: 10.1109/Ted.2003.809433  0.84
2003 Chen W, Register LF, Banerjee SK. Scattering in a nano-scale MOSFET: A quantum transport analysis Proceedings of the Ieee Conference On Nanotechnology. 1: 32-35. DOI: 10.1109/NANO.2003.1231707  0.84
2003 Li F, Mudanai SP, Fan YY, Register LF, Banerjee SK. Compact model of MOSFET electron tunneling current through ultra-thin SiO<inf>2</inf> and high-k gate stacks Device Research Conference - Conference Digest, Drc. 2003: 47-48. DOI: 10.1109/DRC.2003.1226865  0.84
2003 Chen W, Register LF, Banerjee SK. Two-dimensional quantum mechanical simulation of electron transport in nano-scaled Si-based MOSFETs Physica E: Low-Dimensional Systems and Nanostructures. 19: 28-32. DOI: 10.1016/S1386-9477(03)00289-3  0.84
2003 Register LF, Chen W, Banerjee SK. Bridging the gap between classical and quantum transport in nanoscale MOSFETs: Schrödinger equation Monte Carlo-2D Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 195-199.  0.84
2003 Li F, Mudanai SP, Fan YY, Zhao W, Register LF, Banerjee SK. A simulated annealing approach for automatic extraction of device and material parameters of MOS with SiO2/high-K gate stacks Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 218-221.  0.84
2002 Register LF, Chen W, Zheng X, Stroscio M. Carrier capture and transport within tunnel injection lasers: A quantum transport analysis International Journal of High Speed Electronics and Systems. 12: 1135-1145. DOI: 10.1142/S0129156402001952  0.84
2002 Fan YY, Nieh RE, Lee JC, Lucovsky G, Brown GA, Register LF, Banerjee SK. Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor Ieee Transactions On Electron Devices. 49: 1969-1978. DOI: 10.1109/Ted.2002.804713  0.84
2002 Mudanai S, Li F, Samavedam SB, Tobin PJ, Kang CS, Nieh R, Lee JC, Register LF, Banerjee SK. Interfacial defect states in HfO2 and ZrO2 nMOS capacitors Ieee Electron Device Letters. 23: 728-730. DOI: 10.1109/Led.2002.805753  0.84
2002 Chen W, Register LF, Banerjee SK. Simulation of quantum and scattering effects along the channel of ultra-scaled Si-based MOSFETs Device Research Conference - Conference Digest, Drc. 2002: 109-110. DOI: 10.1109/DRC.2002.1029539  0.84
2002 Chen W, Register LF, Banerjee SK. Simulation of quantum effects along the channel of ultrascaled Si-based MOSFETs Ieee Transactions On Electron Devices. 49: 652-657. DOI: 10.1109/16.992875  0.84
2002 Wang X, Kencke DL, Liu KC, Register LF, Banerjee SK. Band alignments in sidewall strained Si/strained SiGe heterostructures Solid-State Electronics. 46: 2021-2025. DOI: 10.1016/S0038-1101(02)00247-2  0.84
2001 Haggag A, McMahon W, Hess K, Fischer B, Register LF. Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability Vlsi Design. 13: 111-115. DOI: 10.1155/2001/90787  0.84
2001 Mudanai S, Register LF, Tasch AF, Banerjee SK. Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs Ieee Electron Device Letters. 22: 145-147. DOI: 10.1109/55.910624  0.84
2001 Ouyang QC, Chen X, Tasch Al.F. J, Register LF, Banerjee SK. Built-in longitudinal field effects in sub-100-nm graded Si1-xGex channel PMOSFETs Ieee Transactions On Electron Devices. 48: 1245-1249. DOI: 10.1109/16.925255  0.84
2001 Mudanai S, Register LF, Tasch AF, Banerjee SK. A new and accurate quantum mechanical compact model for NMOS gate capacitance Annual Device Research Conference Digest. 87-88.  0.84
2001 Ouyang Q, Chen X, Tasch AF, Register LF, Banerjee SK, Chu JO, Ott JA. Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects Ieee Symposium On Vlsi Circuits, Digest of Technical Papers. 53-54.  0.84
2000 Ouyang Q, Chen X, Mudanai SP, Wang X, Kencke DL, Tasch AF, Register LF, Banerjee SK. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current Ieee Transactions On Electron Devices. 47: 1943-1949. DOI: 10.1109/16.870577  0.84
2000 Register LF, Hess K. Improved algorithm for modeling collision broadening through a sequence of scattering events in semiclassical Monte Carlo Journal of Applied Physics. 87: 303-311. DOI: 10.1063/1.371861  0.84
2000 Tuttle BR, Hess K, Register LF. Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress Superlattices and Microstructures. 27: 441-445. DOI: 10.1006/Spmi.2000.0859  0.84
2000 Städele M, Tuttle BR, Hess K, Register LF. Tight-binding investigation of electron tunneling through ultrathin SiO2 gate oxides Superlattices and Microstructures. 27: 405-409. DOI: 10.1006/Spmi.2000.0850  0.84
2000 Chen W, Ouyang Q, Register LF, Banerjee SK. Quantum effects along the channel of ultra-scaled Si-based MOSFETs? Technical Digest - International Electron Devices Meeting. 291-294.  0.84
2000 Li E, Rosenbaum E, Register LF, Tao J, Fang P. Hot carrier induced degradation in deep submicron MOSFETs at 100 °C Annual Proceedings - Reliability Physics (Symposium). 103-107.  0.84
2000 Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Monte Carlo simulation of electron transport in simple orthorhombically strained silicon Journal of Applied Physics. 88: 4717-4724.  0.84
2000 Wang X, Kencke DL, Liu KC, Tasch AF, Register LF, Banerjee SK. Electron transport properties in novel orthorhombically-strained silicon material explored by the Monte Carlo method International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 70-73.  0.84
2000 Fan YY, Mudanai S, Qi W, Lee JC, Tasch AF, Register LF, Banerjee SK. Modeling high K gate current from p-type Si inversion layers Annual Device Research Conference Digest. 63-64.  0.84
2000 Ouyang Q, Chen XD, Mudanai S, Kencke DL, Wang X, Tasch AF, Register LF, Banerjee SK. Two-dimensional bandgap engineering in a novel Si/SiGe pMOSFET with enhanced device performance and scalability International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 151-154.  0.84
1999 Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4  0.84
1999 Register LF, Hess K. Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo Microelectronic Engineering. 47: 353-355. DOI: 10.1016/S0167-9317(99)00232-4  0.84
1999 Wu J, Register LF, Rosenbaum E. Trap-assisted tunneling current through ultra-thin oxide Annual Proceedings - Reliability Physics (Symposium). 389-395.  0.84
1999 Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices Applied Physics Letters. 74: 457-459.  0.84
1998 Klein B, Register LF, Grupen M, Hess K. Numerical simulation of vertical cavity surface emitting lasers Optics Express. 2: 163-168. DOI: 10.1364/Oe.2.000163  0.84
1998 Register LF. Simulation of optical excitation to and emission from electron Fabry-Perot states subject to strong inelastic scattering Vlsi Design. 6: 351-353. DOI: 10.1155/1998/96493  0.84
1998 Klein B, Register LF, Hess K, Deppe DG, Deng Q. Self-consistent Green's function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers Applied Physics Letters. 73: 3324-3326. DOI: 10.1063/1.122710  0.84
1998 Hess K, Register LF, Tuttle B, Lyding J, Kizilyalli IC. Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime Physica E: Low-Dimensional Systems and Nanostructures. 3: 1-7. DOI: 10.1016/S1386-9477(98)00211-2  0.84
1998 Klein B, Register LF, Hess K, Deppe D. Theory and modeling of lasing modes in vertical cavity surface emitting lasers Vlsi Design. 8: 87-91.  0.84
1997 Rosenbaum E, Register LF. Mechanism of stress-induced leakage current in MOS capacitors Ieee Transactions On Electron Devices. 44: 317-323. DOI: 10.1109/16.557724  0.84
1997 Register LF, Hess K. Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport Applied Physics Letters. 71: 1222-1224. DOI: 10.1063/1.119857  0.84
1995 Register LF, Baca R, Kosinovsky GA, Grupen M, Hess K. Possibility of off-resonance lasing in vertical cavity surface emitting lasers Applied Physics Letters. 259. DOI: 10.1063/1.114195  0.84
1994 Register LF, Hess K. Numerical simulation of electron transport in mesoscopic structures with weak dissipation Physical Review B. 49: 1900-1907. DOI: 10.1103/Physrevb.49.1900  0.84
1994 Averin DV, Register LF, Likharev KK, Hess K. Single-electron Coulomb exclusion on the atomic level Applied Physics Letters. 64: 126-128. DOI: 10.1063/1.110900  0.84
1992 Register LF. Microscopic basis for a sum rule for polar-optical-phonon scattering of carriers in heterostructures Physical Review B. 45: 8756-8759. DOI: 10.1103/Physrevb.45.8756  0.84
1991 Register LF, Stroscio MA, Littlejohn MA. Constraints on the polar-optical-phonon influence functional in heterostructures. Physical Review. B, Condensed Matter. 44: 3850-3853. PMID 10000014 DOI: 10.1103/Physrevb.44.3850  0.84
1991 Register LF, Ravaioli U, Hess K. Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation Journal of Applied Physics. 69: 7153-7158. DOI: 10.1063/1.347606  0.84
1991 Register LF, Littlejohn MA, Stroscio MA. Path-integral Monte Carlo calculation of free and confined carrier real self-energies at non-zero temperatures Superlattices and Microstructures. 10: 47-50. DOI: 10.1016/0749-6036(91)90145-H  0.84
1989 Register LF, Stroscio MA, Littlejohn MA. Efficient path-integral Monte Carlo technique for ultrasmall device applications Superlattices and Microstructures. 6: 233-244. DOI: 10.1016/0749-6036(89)90165-1  0.84
1989 Register LF, Littlejohn MA, Stroscio MA. Polar optical phonon scattering of charge carriers in alloy semiconductors: Effects of phonon localization Solid State Electronics. 32: 1387-1391. DOI: 10.1016/0038-1101(89)90245-1  0.84
1988 Register LF, Stroscio MA, Littlejohn MA. Numerical evaluation of the Feynman integral-over-paths in real and imaginary-time Superlattices and Microstructures. 4: 61-68. DOI: 10.1016/0749-6036(88)90268-6  0.84
1988 Register LF, Littlejohn MA, Stroscio MA. Feynman path integral study of confined carriers subject to a statistical potential Solid State Electronics. 31: 563-566. DOI: 10.1016/0038-1101(88)90342-5  0.84
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