Spencer J. Won, Ph.D. - Publications

Affiliations: 
2011 Civil Engineering University of Colorado, Boulder, Boulder, CO, United States 
Area:
Civil Engineering

29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Kim JH, Yoo BH, Won SJ, Choi BY, Lee BE, Kim IY, Kho A, Lee SH, Sohn M, Suh SW. Melatonin Reduces Hypoglycemia-Induced Neuronal Death in Rats. Neuroendocrinology. PMID 26065386 DOI: 10.1159/000434722  0.36
2013 Woo SH, Kim JP, Park JJ, Shim HS, Lee SH, Lee HJ, Won SJ, Son HY, Kim RB, Son YI. Comparison of natural drainage group and negative drainage groups after total thyroidectomy: prospective randomized controlled study. Yonsei Medical Journal. 54: 204-8. PMID 23225820 DOI: 10.3349/ymj.2013.54.1.204  0.36
2013 Choi JS, Yang BS, Won SJ, Kim JR, Suh S, Park HK, Heo J, Kim HJ. Low temperature formation of silicon oxide thin films by atomic layer deposition using NH3/O2 plasma Ecs Solid State Letters. 2. DOI: 10.1149/2.007312ssl  0.36
2012 Choi YJ, Won SJ, Jung HS, Park S, Cho DY, Hwang CS, Park TJ, Kim HJ. Effects of oxygen source on film properties of atomic-layer-deposited la-silicate film using La[N(SiMe3)2]3 Ecs Solid State Letters. 1. DOI: 10.1149/2.014201ssl  0.36
2012 Suh S, Park S, Lim H, Choi YJ, Seong Hwang C, Joon Kim H, Won SJ. Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al 2O 3 films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4737123  0.36
2012 Won SJ, Jung HS, Suh S, Choi YJ, Lee NI, Hwang CS, Kim HJ. Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3664122  0.36
2011 Won SJ, Kim JR, Suh S, Lee NI, Hwang CS, Kim HJ. Effect of catalyst layer density and growth temperature in rapid atomic layer deposition of silica using tris(tert-pentoxy)silanol. Acs Applied Materials & Interfaces. 3: 1633-9. PMID 21517074 DOI: 10.1021/am200176j  0.36
2011 Huh MS, Won SJ, Yang BS, Oh S, Oh MS, Jeong JK, Kim HJ. Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3571760  0.36
2011 Won SJ, Kim JR, Suh S, Choi YJ, Kim HJ. Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water Applied Surface Science. 257: 10311-10313. DOI: 10.1016/j.apsusc.2011.06.052  0.36
2010 Won SJ, Huh MS, Park S, Suh S, Park TJ, Kim JH, Hwang CS, Kim HJ. Capacitance and interface analysis of transparent analog capacitor using indium tin oxide electrodes and high- K dielectrics Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3425806  0.36
2010 Huh MS, Yang BS, Oh S, Won SJ, Jeong JK, Hwang CS, Kim HJ. Improvement in the device characteristics of tin oxide thin-film transistors by adopting ultralow-pressure sputtering Ecs Transactions. 25: 119-126. DOI: 10.1149/1.3422588  0.36
2010 Won SJ, Suh S, Lee SW, Choi GJ, Hwang CS, Kim HJ. Substrate dependent growth rate of plasma-enhanced atomic layer deposition of titanium oxide using N2 O Gas Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3269901  0.36
2010 Won SJ, Suh S, Huh MS, Kim HJ. High-quality low-temperature silicon oxide by plasma-enhanced atomic layer deposition using a metalorganic silicon precursor and oxygen radical Ieee Electron Device Letters. 31: 857-859. DOI: 10.1109/LED.2010.2049978  0.36
2009 Choi GJ, Kim SK, Won SJ, Kim HJ, Hwang CS. Plasma-enhanced atomic layer deposition of TiO2 and al-doped TiO2 films using N2 O and O2 reactants Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3169516  0.36
2009 Huh MS, Yang BS, Song J, Heo J, Won SJ, Jeong JK, Hwang CS, Kim HJ. Improving the morphological and optical properties of sputtered indium tin oxide thin films by adopting ultralow-pressure sputtering Journal of the Electrochemical Society. 156. DOI: 10.1149/1.3005562  0.36
2009 Heo J, Eom D, Lee SY, Won SJ, Park S, Hwang CS, Kim HJ. Atomic layer deposition of ruthenium nanoparticles using a low-density dielectric film as template structure Chemistry of Materials. 21: 4006-4011. DOI: 10.1021/cm901032q  0.36
2009 Won SJ, Kim JY, Choi GJ, Heo J, Hwang CS, Kim HJ. The formation of an almost full atomic monolayer via surface modification by N2O-plasma in atomic layer deposition of zrO2 thin films Chemistry of Materials. 21: 4374-4379. DOI: 10.1021/cm9005234  0.36
2009 Won SJ, Huh MS, Park S, Suh S, Choi YJ, Heo J, Hwang CS, Kim HJ. Interface Analysis of Transparent Analog Capacitor Using ITO Electrodes and ALD High-k Dielectrics Ecs Transactions. 25: 367-376.  0.36
2008 Heo J, Won SJ, Eom D, Lee SY, Ahn YB, Hwang CS, Kim HJ. The role of the methyl and hydroxyl groups of low- k dielectric films on the nucleation of ruthenium by ALD Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2929064  0.36
2007 Won SJ, Kook JA, Mi RP, Ji YK, Jae JC, Bum SK, Seong TH. The radiological spectrum of orbital pathologies that involve the lacrimal gland and the lacrimal fossa Korean Journal of Radiology. 8: 336-342. PMID 17673845 DOI: 10.3348/kjr.2007.8.4.336  0.48
2007 Park JM, Song MW, Kim WH, Park PK, Jung YK, Kim JY, Won SJ, Lee JH, Lee NI, Kang HK. Mass production worthy MIM capacitor on gate polysilicon(MIM-COG) structure using HfO2/HfOxCyNz/HfO2 dielectric for analog/RF/mixed signal application Technical Digest - International Electron Devices Meeting, Iedm. 993-996. DOI: 10.1109/IEDM.2007.4419121  0.36
2004 Jung IJ, Won SJ, Seong TH, Chang KM, Chun CK, Seog HP. Bronchiolitis obliterans after allogenic bone marrow transplantation: HRCT findings Korean Journal of Radiology. 5: 107-113. PMID 15235235  0.48
2004 Jeong YK, Won SJ, Kwon DJ, Song MW, Kim WH, Park MH, Jeong JH, Oh HS, Kang HK, Suh KP. High quality high-k MIM capacitor by Ta2O5/HfO 2/Ta2O5 multi-layered dielectric and NH 3 plasma interface treatments for mixed-signal/RF applications Digest of Technical Papers - Symposium On Vlsi Technology. 222-223.  0.36
2001 Joo JH, Kim WD, Jeong YK, Won SJ, Park SY, Yoo CY, Kim ST, Moon JT. Rugged metal electrode (RME) for high density memory devices Japanese Journal of Applied Physics, Part 2: Letters. 40.  0.36
2001 Kim WD, Joo JH, Jeong YK, Won SJ, Park SY, Lee SC, Yoo CY, Kim ST, Moon JT. Development of CVD-Ru/Ta2O5/CVD-Ru capacitor with concave structure for multigigabit-scale DRAM generation Technical Digest - International Electron Devices Meeting. 263-266.  0.36
2000 Won SJ, Kim WD, Yoo CY, Kim ST, Park YW, Moon JT, Lee MY. Conformal CVD-Ruthenium process for MIM capacitor in giga-bit DRAMs Technical Digest - International Electron Devices Meeting. 789-792.  0.36
2000 Kim JW, Nam SD, Lee SH, Won SJ, Kim WD, Yoo CY, Park YW, Lee SI, Lee MY. Electrical properties of crystalline Ta2O5 with Ru electrode Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39: 2094-2097.  0.36
1996 Chang YH, Chun JS, Oh JE, Won SJ, Paek SH, Lee HD, Lee SI, Choi JS, Lee JG. Enhancement of titanium nitride barrier metal properties by nitrogen radical assisted metalorganic chemical vapor deposition Applied Physics Letters. 68: 2580-2582. DOI: 10.1063/1.116190  0.36
1995 Chang YH, Won SJ, Oh JE, Paek SH, Lee HD, Choi JS, Lee SI, Ahn ST, Lee JG. X-ray photoelectron spectroscopy studies of titanium nitride barrier metals prepared by low-pressure metalorganic chemical vapor deposition Japanese Journal of Applied Physics. 34: L907-L910. DOI: 10.1143/JJAP.34.L907  0.36
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