| Year |
Citation |
Score |
| 2022 |
Zhang J, Chattaraj S, Huang Q, Jordao L, Lu S, Madhukar A. On-chip scalable highly pure and indistinguishable single-photon sources in ordered arrays: Path to quantum optical circuits. Science Advances. 8: eabn9252. PMID 36054351 DOI: 10.1126/sciadv.abn9252 |
0.586 |
|
| 2020 |
Chattaraj S, Zhang J, Lu S, Madhukar A. On-Chip Integrated Single Photon Source-Optically Resonant Metastructure Based Scalable Quantum Optical Circuits Ieee Journal of Quantum Electronics. 56: 1-9. DOI: 10.1109/Jqe.2019.2952387 |
0.616 |
|
| 2019 |
Zhang J, Chattaraj S, Lu S, Madhukar A. Highly pure single photon emission from spectrally uniform surface-curvature directed mesa top single quantum dot ordered array Applied Physics Letters. 114: 071102. DOI: 10.1063/1.5080746 |
0.626 |
|
| 2016 |
Zhang J, Lu S, Chattaraj S, Madhukar A. Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs single quantum dots. Optics Express. 24: 29955-29962. PMID 28059380 DOI: 10.1364/Oe.24.029955 |
0.625 |
|
| 2016 |
Chattaraj S, Madhukar A. Multifunctional all-dielectric nano-optical systems using collective multipole Mie resonances: toward on-chip integrated nanophotonics Journal of the Optical Society of America B-Optical Physics. 33: 2414-2423. DOI: 10.1364/Josab.33.002414 |
0.387 |
|
| 2016 |
Zhang J, Chattaraj S, Lu S, Madhukar A. Mesa-top quantum dot single photon emitter arrays: Growth, optical characteristics, and the simulated optical response of integrated dielectric nanoantenna-waveguide systems Journal of Applied Physics. 120: 243103. DOI: 10.1063/1.4972272 |
0.62 |
|
| 2014 |
Zhang J, Lingley Z, Lu S, Madhukar A. Nanotemplate-directed InGaAs/GaAs single quantum dots: Toward addressable single photon emitter arrays Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4863680 |
0.816 |
|
| 2014 |
Lingley Z, Lu S, Madhukar A. The dynamics of energy and charge transfer in lead sulfide quantum dot solids Journal of Applied Physics. 115. DOI: 10.1063/1.4866368 |
0.804 |
|
| 2014 |
Lingley Z, Mahalingam K, Lu S, Brown GJ, Madhukar A. Nanocrystal-semiconductor interface: Atomic-resolution cross-sectional transmission electron microscope study of lead sulfide nanocrystal quantum dots on crystalline silicon Nano Research. 7: 219-227. DOI: 10.1007/S12274-013-0389-4 |
0.809 |
|
| 2013 |
Lu S, Madhukar A. Inducing repetitive action potential firing in neurons via synthesized photoresponsive nanoscale cellular prostheses. Nanomedicine : Nanotechnology, Biology, and Medicine. 9: 293-301. PMID 22841911 DOI: 10.1016/J.Nano.2012.07.001 |
0.509 |
|
| 2012 |
Lu S, Lee JK, Madhukar A. Ca2+ Dynamics in Apoptosis: Real-Time Data and Mathematical Modeling Biophysical Journal. 102. DOI: 10.1016/J.Bpj.2011.11.3422 |
0.497 |
|
| 2011 |
Lingley Z, Lu S, Madhukar A. A high quantum efficiency preserving approach to ligand exchange on lead sulfide quantum dots and interdot resonant energy transfer. Nano Letters. 11: 2887-91. PMID 21707024 DOI: 10.1021/Nl201351F |
0.803 |
|
| 2011 |
Lu S, Madhukar A. Nanoscale Photovoltaic Prosthesis For Inducing Repetitive Action Potential Firing in Nerve Cells Biophysical Journal. 100. DOI: 10.1016/J.Bpj.2010.12.727 |
0.511 |
|
| 2011 |
Lu S, Lee JK, Madhukar A. Real-Time Dynamics of Ca2+, Phosphatidylserine, Caspase-3/7, and Morphological Changes in Apoptosis: Retinal Ganglion Cells Under Elevated Pressure Biophysical Journal. 100. DOI: 10.1016/J.Bpj.2010.12.425 |
0.502 |
|
| 2010 |
Lee JK, Lu S, Madhukar A. Real-Time dynamics of Ca2+, caspase-3/7, and morphological changes in retinal ganglion cell apoptosis under elevated pressure. Plos One. 5: e13437. PMID 20976135 DOI: 10.1371/Journal.Pone.0013437 |
0.506 |
|
| 2010 |
Lu S, Madhukar A. Cellular prostheses: functional abiotic nanosystems to probe, manipulate, and endow function in live cells. Nanomedicine : Nanotechnology, Biology, and Medicine. 6: 409-18. PMID 20116456 DOI: 10.1016/J.Nano.2010.01.004 |
0.523 |
|
| 2010 |
Asano T, Hu C, Zhang Y, Liu M, Campbell JC, Madhukar A. Design Consideration and Demonstration of Resonant-Cavity-Enhanced Quantum Dot Infrared Photodetectors in Mid-Infrared Wavelength Regime (3–5 $\mu{\rm m}$) Ieee Journal of Quantum Electronics. 46: 1484-1491. DOI: 10.1109/Jqe.2010.2052351 |
0.632 |
|
| 2010 |
Asano T, Fang Z, Madhukar A. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices Journal of Applied Physics. 107. DOI: 10.1063/1.3359704 |
0.641 |
|
| 2009 |
Lu S, Lingley Z, Asano T, Harris D, Barwicz T, Guha S, Madhukar A. Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm. Nano Letters. 9: 4548-52. PMID 19856942 DOI: 10.1021/Nl903104K |
0.796 |
|
| 2008 |
Asano T, Madhukar A, Mahalingam K, Brown GJ. Dark current and band profiles in low defect density thick multilayered GaAs/InAs self-assembled quantum dot structures for infrared detectors Journal of Applied Physics. 104. DOI: 10.1063/1.3039799 |
0.645 |
|
| 2007 |
Lu S, Madhukar A. Nonradiative resonant excitation transfer from nanocrystal quantum dots to adjacent quantum channels. Nano Letters. 7: 3443-51. PMID 17956142 DOI: 10.1021/Nl0719731 |
0.645 |
|
| 2007 |
Kim ET, Madhukar A. Growth kinetics and formation of uniform self-assembled InAs/GaAs quantum dots at Solid State Phenomena. 124: 539-542. DOI: 10.4028/Www.Scientific.Net/Ssp.124-126.539 |
0.428 |
|
| 2007 |
Campbell JC, Madhukar A. Quantum-dot infrared photodetectors Proceedings of the Ieee. 95: 1815-1827. DOI: 10.1109/JPROC.2007.900967 |
0.334 |
|
| 2006 |
Lu S, Bansal A, Soussou W, Berger TW, Madhukar A. Receptor-ligand-based specific cell adhesion on solid surfaces: hippocampal neuronal cells on bilinker functionalized glass. Nano Letters. 6: 1977-81. PMID 16968011 DOI: 10.1021/Nl061139W |
0.498 |
|
| 2006 |
Makeev MA, Madhukar A. Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems. Nano Letters. 6: 1279-83. PMID 16771594 DOI: 10.1021/Nl0602600 |
0.758 |
|
| 2006 |
Kim ET, Chen Z, Madhukar A. Two-color InAs/InGaAs quantum-dot infrared photodetectors for mid- and long-wavelength infrared detection Journal of the Korean Physical Society. 49. |
0.374 |
|
| 2005 |
Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy. Nano Letters. 5: 969-73. PMID 15884904 DOI: 10.1021/Nl0502625 |
0.621 |
|
| 2005 |
Madhukar A, Lu S, Konkar A, Zhang Y, Ho M, Hughes SM, Alivisatos AP. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior. Nano Letters. 5: 479-82. PMID 15755098 DOI: 10.1021/Nl047947+ |
0.59 |
|
| 2005 |
Makeev MA, Kalia RK, Nakano A, Vashishta P, Madhukar A. Effect of geometry on stress relaxation in InAs/GaAs rectangular nanomesas: Multimillion-atom molecular dynamics simulations Journal of Applied Physics. 98. DOI: 10.1063/1.1988970 |
0.513 |
|
| 2005 |
Khatsevich S, Rich DH, Kim ET, Madhukar A. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots Journal of Applied Physics. 97. DOI: 10.1063/1.1935743 |
0.574 |
|
| 2004 |
Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Integration of nanocrystal quantum dots with crystalline semiconductor substrates: Structure, Stability, and Optical response Mrs Proceedings. 854. DOI: 10.1557/Proc-854-U4.7 |
0.628 |
|
| 2004 |
Makeev MA, Yu W, Madhukar A. Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study Journal of Applied Physics. 96: 4429-4443. DOI: 10.1063/1.1792811 |
0.716 |
|
| 2004 |
Kim ET, Madhukar A, Ye Z, Campbell JC. High detectivity InAs quantum dot infrared photodetectors Applied Physics Letters. 84: 3277-3279. DOI: 10.1063/1.1719259 |
0.575 |
|
| 2004 |
Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP. Integration of nanocrystal quantum dots with crystalline semiconductor substrates: Structure, Stability, and Optical response Materials Research Society Symposium Proceedings. 854: 58-63. |
0.316 |
|
| 2003 |
Chen Z, Kim ET, Madhukar A. Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 95-96. DOI: 10.1109/ISCS.2003.1239922 |
0.33 |
|
| 2003 |
Makeev MA, Yu W, Madhukar A. Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si(001) islands: An atomistic simulation study Physical Review B - Condensed Matter and Materials Physics. 68: 1953011-19530113. DOI: 10.1103/Physrevb.68.195301 |
0.394 |
|
| 2003 |
Makeev MA, Madhukar A. Stress and strain fields from an array of spherical inclusions in semi-infinite elastic media: Ge nanoinclusions in Si Physical Review B - Condensed Matter and Materials Physics. 67: 732011-732014. DOI: 10.1103/Physrevb.67.073201 |
0.318 |
|
| 2003 |
Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. InAs/GaAs square nanomesas: Multimillion-atom molecular dynamics simulations on parallel computers Journal of Applied Physics. 94: 6762-6773. DOI: 10.1063/1.1609049 |
0.538 |
|
| 2003 |
Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Noise and photoconductive gain in InAs quantum-dot infrared photodetectors Applied Physics Letters. 83: 1234-1236. DOI: 10.1063/1.1597987 |
0.606 |
|
| 2002 |
Chen Z, Kim ET, Madhukar A. Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs/GaAs(001) quantum dots in n-i-n photodetector structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1243-1246. DOI: 10.1116/1.1463721 |
0.633 |
|
| 2002 |
Kim ET, Chen Z, Ho M, Madhukar A. Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1188-1191. DOI: 10.1116/1.1463695 |
0.634 |
|
| 2002 |
Kim ET, Chen Z, Madhukar A. Selective manipulation of self-assembled quantum dot electronic states via use of a lateral potential confinement layer Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 281. DOI: 10.1109/MBE.2002.1037869 |
0.358 |
|
| 2002 |
Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity Ieee Journal of Quantum Electronics. 38: 1234-1237. DOI: 10.1109/Jqe.2002.802159 |
0.616 |
|
| 2002 |
Makeev MA, Madhukar A. Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces Applied Physics Letters. 81: 3789-3791. DOI: 10.1063/1.1518150 |
0.707 |
|
| 2002 |
Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers Journal of Applied Physics. 92: 7462-7468. DOI: 10.1063/1.1517750 |
0.605 |
|
| 2002 |
Kim ET, Chen Z, Madhukar A. Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer Applied Physics Letters. 81: 3473-3475. DOI: 10.1063/1.1517710 |
0.616 |
|
| 2002 |
Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection Journal of Applied Physics. 92: 4141-4143. DOI: 10.1063/1.1504167 |
0.621 |
|
| 2002 |
Chen Z, Kim ET, Madhukar A. Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots Applied Physics Letters. 80: 2770-2772. DOI: 10.1063/1.1468896 |
0.634 |
|
| 2002 |
Chen Z, Kim ET, Madhukar A. Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots Applied Physics Letters. 80: 2490-2492. DOI: 10.1063/1.1467974 |
0.62 |
|
| 2001 |
Makeev MA, Madhukar A. Simulations of atomic level stresses in systems of buried Ge /Si islands. Physical Review Letters. 86: 5542-5. PMID 11415296 DOI: 10.1103/Physrevlett.86.5542 |
0.339 |
|
| 2001 |
Ye Z, Campbell JC, Chen Z, Baklenov O, Kim ET, Mukhametzhanov I, Tie J, Madhukar A. High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H9.17.1 |
0.467 |
|
| 2001 |
Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study Applied Physics Letters. 79: 4577-4579. DOI: 10.1063/1.1428621 |
0.51 |
|
| 2001 |
Kim ET, Chen Z, Madhukar A. Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells Applied Physics Letters. 79: 3341-3343. DOI: 10.1063/1.1417513 |
0.641 |
|
| 2001 |
Su X, Kalia RK, Nakano A, Vashishta P, Madhukar A. Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas Applied Physics Letters. 78: 3717-3719. DOI: 10.1063/1.1377618 |
0.561 |
|
| 2001 |
Chen Z, Baklenov O, Kim ET, Mukhametzhanov I, Tie J, Madhukar A, Ye Z, Campbell JC. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region Journal of Applied Physics. 89: 4558-4563. DOI: 10.1063/1.1356430 |
0.484 |
|
| 2001 |
Chen Z, Baklenov O, Kim E, Mukhametzhanov I, Tie J, Madhukar A, Ye Z, Campbell J. InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region Infrared Physics & Technology. 42: 479-484. DOI: 10.1016/S1350-4495(01)00109-8 |
0.47 |
|
| 2001 |
Heitz R, Guffarth F, Mukhametzhanov I, Stier O, Madhukar A, Bimberg D. Excited States of InAs/GaAs Quantum Dots Physica Status Solidi B-Basic Solid State Physics. 224: 367-371. DOI: 10.1002/1521-3951(200103)224:2<367::Aid-Pssb367>3.0.Co;2-B |
0.444 |
|
| 2001 |
Mukhametzhanov I, Chen Z, Baklenov O, Kim E, Madhukar A. Optical and Photocurrent Spectroscopy Studies of Inter- and Intra-Band Transitions in Size-Tailored InAs/GaAs Quantum Dots Physica Status Solidi (B). 224: 697-702. DOI: 10.1002/(Sici)1521-3951(200104)224:3<697::Aid-Pssb697>3.0.Co;2-M |
0.48 |
|
| 2000 |
Bachlechner ME, Omeltchenko A, Nakano A, Kalia RK, Vashishta P, Ebbsjö I, Madhukar A. Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers Physical Review Letters. 84: 322-325. PMID 11015901 DOI: 10.1103/Physrevlett.84.322 |
0.307 |
|
| 2000 |
Rich DH, Zhang C, Mukhametzhanov I, Madhukar A. Cathodoluminescence wavelength imaging study of clustering in InAs/GaAs self-assembled quantum dots Materials Research Society Symposium - Proceedings. 618: 173-178. DOI: 10.1557/Proc-618-173 |
0.423 |
|
| 2000 |
Nakano A, Bachlechner ME, Branicio P, Campbell TJ, Ebbsjö I, Kalia RK, Madhukar A, Ogata S, Omeltchenko A, Rino JP, Shimojo F, Walsh P, Vashishta P. Large-scale atomistic modeling of nanoelectronic structures Ieee Transactions On Electron Devices. 47: 1804-1810. DOI: 10.1109/16.870551 |
0.529 |
|
| 2000 |
Heitz R, Guffarth F, Mukhametzhanov I, Grundmann M, Madhukar A, Bimberg D. Many-body effects on the optical spectra of InAs/GaAs quantum dots Physical Review B. 62: 16881-16885. DOI: 10.1103/Physrevb.62.16881 |
0.416 |
|
| 2000 |
Heitz R, Stier O, Mukhametzhanov I, Madhukar A, Bimberg D. Quantum size effect in self-organized InAs/GaAs quantum dots Physical Review B - Condensed Matter and Materials Physics. 62: 11017-11028. DOI: 10.1103/Physrevb.62.11017 |
0.445 |
|
| 2000 |
Heitz R, Born H, Hoffmann A, Bimberg D, Mukhametzhanov I, Madhukar A. Resonant Raman scattering in self-organized InAs'GaAs quantum dots Applied Physics Letters. 77: 3746-3748. DOI: 10.1063/1.1329321 |
0.431 |
|
| 2000 |
Rich DH, Zhang C, Mukhametzhanov I, Madhukar A. Cathodoluminescence wavelength imaging of μm-scale energy variations in InAs/GaAs self-assembled quantum dots Applied Physics Letters. 76: 3597-3599. DOI: 10.1063/1.126718 |
0.419 |
|
| 2000 |
Heitz R, Mukhametzhanov I, Stier O, Madhukar A, Bimberg D. Phonon-assisted polar exciton–transitions in self-organized InAs/GaAs quantum dots Physica E-Low-Dimensional Systems & Nanostructures. 7: 398-402. DOI: 10.1016/S1386-9477(99)00349-5 |
0.474 |
|
| 1999 |
Bachlechner ME, Omeltchenko A, Walsh P, Nakano A, Kalia RK, Vashishta P, Ebbsjö I, Madhukar A. Multi-Million Atom Molecular-Dynamics Simulations of Stresses in Si(111)/Si3N4 Nanopixels Mrs Proceedings. 592. DOI: 10.1557/Proc-592-369 |
0.52 |
|
| 1999 |
Su X, Kalia RK, Madhukar A, Nakano A, Vashishta P. Multimillion-Atom Simulations of Atomic-Level Surface Stresses and Pressure Distribution on InAs/GaAs Mesas Mrs Proceedings. 584. DOI: 10.1557/Proc-584-269 |
0.332 |
|
| 1999 |
Heitz R, Mukhametzhanov I, Stier O, Madhukar A, Bimberg D. Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots Physical Review Letters. 83: 4654-4657. DOI: 10.1103/Physrevlett.83.4654 |
0.466 |
|
| 1999 |
Mukhametzhanov I, Wei Z, Heitz R, Madhukar A. Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution Applied Physics Letters. 75: 85-87. DOI: 10.1063/1.124284 |
0.454 |
|
| 1999 |
Bachlechner ME, Kalia RK, Nakano A, Omeltchenko A, Vashishta P, Ebbsjö I, Madhukar A, Zhao G. Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers Journal of the European Ceramic Society. 19: 2265-2272. DOI: 10.1016/S0955-2219(99)00119-3 |
0.526 |
|
| 1999 |
Heitz R, Mukhametzhanov I, Madhukar A, Hoffmann A, Bimberg D. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots Journal of Electronic Materials. 28: 520-527. DOI: 10.1007/S11664-999-0105-Z |
0.434 |
|
| 1999 |
Heitz R, Mukhametzhanov I, Zeng J, Chen P, Madhukar A, Bimberg D. Excitation transfer in novel self-organized quantum dot structures Superlattices and Microstructures. 25: 97-104. DOI: 10.1006/Spmi.1998.0620 |
0.465 |
|
| 1999 |
Mukhametzhanov I, Madhukar A. Room temperature electroluminescence at 1.3 μm from strained InAs/GaAs quantum dots Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 305-306. |
0.372 |
|
| 1998 |
Parent T, Heitz R, Chen P, Madhukar A. Real-time feedback control of thermal CL2 etching of GaAs based on in-situ spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 502: 71-76. DOI: 10.1557/Proc-502-71 |
0.31 |
|
| 1998 |
Konkar A, Heitz R, Ramachandran TR, Chen P, Madhukar A. Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1334-1338. DOI: 10.1116/1.590070 |
0.362 |
|
| 1998 |
Ramachandran TR, Madhukar A, Mukhametzhanov I, Heitz R, Kalburge A, Xie Q, Chen P. Nature of Stranski–Krastanow growth of InAs on GaAs(001) Journal of Vacuum Science & Technology B. 16: 1330-1333. DOI: 10.1116/1.590069 |
0.313 |
|
| 1998 |
Heitz R, Mukhametzhanov I, Chen P, Madhukar A. Excitation transfer in self-organized asymmetric quantum dot pairs Physical Review B - Condensed Matter and Materials Physics. 58. DOI: 10.1103/Physrevb.58.R10151 |
0.457 |
|
| 1998 |
Heitz R, Kalburge A, Xie Q, Grundmann M, Chen P, Hoffmann A, Madhukar A, Bimberg D. Excited states and energy relaxation in stacked InAs/GaAs quantum dots Physical Review B. 57: 9050-9060. DOI: 10.1103/Physrevb.57.9050 |
0.383 |
|
| 1998 |
Rich DH, Tang Y, Konkar A, Chen P, Madhukar A. Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots Journal of Applied Physics. 84: 6337-6344. DOI: 10.1063/1.368959 |
0.468 |
|
| 1998 |
Tang Y, Rich DH, Mukhametzhanov I, Chen P, Madhukar A. Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence Journal of Applied Physics. 84: 3342-3348. DOI: 10.1063/1.368490 |
0.424 |
|
| 1998 |
Mukhametzhanov I, Heitz R, Zeng J, Chen P, Madhukar A. Independent manipulation of density and size of stress-driven self-assembled quantum dots Applied Physics Letters. 73: 1841-1843. DOI: 10.1063/1.122300 |
0.463 |
|
| 1998 |
Bachlechner ME, Omeltchenko A, Nakano A, Kalia RK, Vashishta P, Ebbsjö I, Madhukar A, Messina P. Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels Applied Physics Letters. 72: 1969-1971. DOI: 10.1063/1.121237 |
0.51 |
|
| 1998 |
Konkar A, Madhukar A, Chen P. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates Applied Physics Letters. 72: 220-222. DOI: 10.1063/1.120691 |
0.442 |
|
| 1998 |
Heitz R, Veit M, Kalburge A, Xie Q, Grundmann M, Chen P, Ledentsov NN, Hoffmann A, Madhukar A, Bimberg D, Ustinov VM, Kop'ev PS, Alferov ZI. Hot carrier relaxation in InAs/GaAs quantum dots Physica E-Low-Dimensional Systems & Nanostructures. 2: 578-582. DOI: 10.1016/S1386-9477(98)00118-0 |
0.442 |
|
| 1998 |
Madhukar A, Ramachandran TR, Konkar A, Mukhametzhanov I, Yu W, Chen P. On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum ☐es Applied Surface Science. 123: 266-275. DOI: 10.1016/S0169-4332(97)00464-9 |
0.381 |
|
| 1997 |
Yu W, Madhukar A. Molecular dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy Physical Review Letters. 79: 905-908. DOI: 10.1103/Physrevlett.79.905 |
0.345 |
|
| 1997 |
Kalburge A, Konkar A, Ramachandran TR, Chen P, Madhukar A. Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth Journal of Applied Physics. 82: 859-864. DOI: 10.1063/1.365785 |
0.326 |
|
| 1997 |
Lin HT, Rich DH, Konkar A, Chen P, Madhukar A. Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence Journal of Applied Physics. 81: 3186-3195. DOI: 10.1063/1.364148 |
0.498 |
|
| 1997 |
Rich DH, Lin HT, Konkar A, Chen P, Madhukar A. Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes Journal of Applied Physics. 81: 1781-1784. DOI: 10.1063/1.364008 |
0.457 |
|
| 1997 |
Konkar A, Lin HT, Rich DH, Chen P, Madhukar A. Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates Journal of Crystal Growth. 175: 741-746. DOI: 10.1016/S0022-0248(96)00973-6 |
0.392 |
|
| 1997 |
Ramachandran TR, Heitz R, Kobayashi NP, Kalburge A, Yu W, Chen P, Madhukar A. Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs(001) Journal of Crystal Growth. 216-223. DOI: 10.1016/S0022-0248(96)00855-X |
0.304 |
|
| 1996 |
Kalburge A, Ramachandran TR, Heitz R, Xie Q, Chen P, Madhukar A. Optical Investigations of InAs Growth on GaAs and Lasing in Singly and Multiply Stacked Island Quantum Boxes Mrs Proceedings. 448. DOI: 10.1557/Proc-448-487 |
0.393 |
|
| 1996 |
Madhukar A, Yu W, Viswanathan R, Chen P. Some computer simulations of semiconductor thin film growth and strain relaxation in a unified atomistic and kinetic model Materials Research Society Symposium - Proceedings. 408: 413-425. DOI: 10.1557/Proc-408-413 |
0.355 |
|
| 1996 |
Xie Q, Kalburge A, Chen P, Madhukar A. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001) Ieee Photonics Technology Letters. 8: 965-967. DOI: 10.1109/68.508705 |
0.443 |
|
| 1996 |
Rich DH, Lin HT, Konkar A, Chen P, Madhukar A. Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AIGaAs layers grown on a patterned GaAs(001) substrate Applied Physics Letters. 69: 665-667. DOI: 10.1063/1.117799 |
0.384 |
|
| 1996 |
Kobayashi NP, Ramachandran TR, Chen P, Madhukar A. In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) Applied Physics Letters. 68: 3299-3301. DOI: 10.1063/1.116580 |
0.58 |
|
| 1996 |
Madhukar A. A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy Journal of Crystal Growth. 163: 149-164. DOI: 10.1016/0022-0248(95)01055-6 |
0.346 |
|
| 1995 |
Konkar A, Madhukar A, Chen P. Creating three-dimensionally confined nanoscale strained structures via substrate encoded size-reducing epitaxy and the enhancement of critical thickness for island formation Materials Research Society Symposium - Proceedings. 380: 17-22. DOI: 10.1557/Proc-380-17 |
0.362 |
|
| 1995 |
Xie Q, Kobayashi NP, Ramachandran TR, Kalburge A, Chen P, Madhukar A. InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy Mrs Proceedings. 379. DOI: 10.1557/Proc-379-177 |
0.426 |
|
| 1995 |
Xie Q, Konkar A, Kalburge A, Ramachandran TR, Chen P, Cartland R, Madhukar A, Lin HT, Rich DH. Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 642-645. DOI: 10.1116/1.587930 |
0.46 |
|
| 1995 |
Xie Q, Madhukar A, Chen P, Kobayashi NP. Vertically self-organized InAs quantum box islands on GaAs(100) Physical Review Letters. 75: 2542-2545. DOI: 10.1103/Physrevlett.75.2542 |
0.584 |
|
| 1995 |
Xie Q, Chen P, Kalburge A, Ramachandran T, Nayfonov A, Konkar A, Madhukar A. Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields Journal of Crystal Growth. 150: 357-363. DOI: 10.1016/0022-0248(95)80235-5 |
0.465 |
|
| 1995 |
Konkar A, Rajkumar KC, Xie Q, Chen P, Madhukar A, Lin HT, Rich DH. In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates Journal of Crystal Growth. 150: 311-316. DOI: 10.1016/0022-0248(95)80226-3 |
0.461 |
|
| 1995 |
Viswanathan R, Madhukar A, Ogale SB. Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform Journal of Crystal Growth. 150: 190-196. DOI: 10.1016/0022-0248(95)80205-Q |
0.389 |
|
| 1995 |
Hasenberg TC, Chen P, Madhukar A, Kost AR, Visher J, Konkar A. InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques Journal of Crystal Growth. 150: 1368-1374. DOI: 10.1016/0022-0248(95)80162-6 |
0.402 |
|
| 1994 |
Rajkumar KC, Madhukar A, Chen P, Konkar A, Chen L, Rammohan K, Rich DH. Realization of three-dimensionally confined structures via one-step in situ molecular beam epitaxy on appropriately patterned GaAs(111)B and GaAs(001) Journal of Vacuum Science & Technology B. 12: 1071-1074. DOI: 10.1116/1.587090 |
0.375 |
|
| 1994 |
Xie Q, Chen P, Madhukar A. InAs island-induced-strain driven adatom migration during GaAs overlayer growth Applied Physics Letters. 65: 2051-2053. DOI: 10.1063/1.112790 |
0.352 |
|
| 1994 |
Yang C, Mahgerefteh D, Garmire E, Chen L, Hu K, Madhukar A. Sweep‐out times of electrons and holes in an InGaAs/GaAs multiple quantum well modulator Applied Physics Letters. 65: 995-997. DOI: 10.1063/1.112173 |
0.441 |
|
| 1994 |
Madhukar A, Xie Q, Chen P, Konkar A. Nature of strained InAs three-dimensional island formation and distribution on GaAs(100) Applied Physics Letters. 64: 2727-2729. DOI: 10.1063/1.111456 |
0.4 |
|
| 1994 |
Karim Z, Kyriakakis C, Tanguay AR, Hu K, Chen L, Madhukar A. Externally deposited phase-compensating dielectric mirrors for asymmetric Fabry-Perot cavity tuning Applied Physics Letters. 64: 2913-2915. DOI: 10.1063/1.111409 |
0.337 |
|
| 1993 |
Kaviani K, Chen L, Hu K, Xie Q, Madhukar A. Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs/InGaAs/AlGaAs quantum wells Journal of Vacuum Science & Technology B. 11: 805-808. DOI: 10.1116/1.586794 |
0.441 |
|
| 1993 |
Guha S, Madhukar A. An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates Journal of Applied Physics. 73: 8662-8664. DOI: 10.1063/1.353353 |
0.303 |
|
| 1993 |
Rajkumar KC, Madhukar A, Rammohan K, Rich DH, Chen P, Chen L. Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B Applied Physics Letters. 63: 2905-2907. DOI: 10.1063/1.110268 |
0.358 |
|
| 1993 |
Maa BY, Dapkus PD, Chen P, Madhukar A. Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs Applied Physics Letters. 62: 2551-2553. DOI: 10.1063/1.109293 |
0.495 |
|
| 1993 |
Madhukar A, Rajkumar KC, Chen P. In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates Applied Physics Letters. 62: 1547-1549. DOI: 10.1063/1.108636 |
0.35 |
|
| 1993 |
Madhukar A. Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures Thin Solid Films. 231: 8-42. DOI: 10.1016/0040-6090(93)90701-P |
0.345 |
|
| 1993 |
Rajkumar KC, Kaviani K, Chen P, Madhukar A, Rammohan K, Rich DH. One-step in-situ quantum dots via molecular beam epitaxy Journal of Crystal Growth. 127: 863-864. DOI: 10.1016/0022-0248(93)90748-L |
0.467 |
|
| 1993 |
Kaviani K, Hu K, Xie Q, Madhukar A. Realization of high performance doped-channel MISFETs in highly strained AlGaAs/InGaAs/AlGaAs based quantum wells Journal of Crystal Growth. 127: 68-72. DOI: 10.1016/0022-0248(93)90579-L |
0.41 |
|
| 1992 |
Chen W, Chen P, Madhukar A, Viswanathan R, So J. Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching Mrs Proceedings. 279. DOI: 10.1557/Proc-279-599 |
0.303 |
|
| 1992 |
Rajkumar KC, Kaviani K, Chen J, Chen P, Madhukar A, Rich DH. In-Situ Growth of Three-Dimensionally Confined Structures on Patterned GaAs (111)B Substrates Mrs Proceedings. 263. DOI: 10.1557/Proc-263-163 |
0.321 |
|
| 1992 |
Kaviani K, Chen J, Hu K, Chen L, Madhukar A. Growth of high quality strained AlxGa1−xAs/In0.26Ga0.74As/AlzGa1−zAs quantum wells and the effect of silicon nitride encapsulation and rapid thermal annealing Journal of Vacuum Science & Technology B. 10: 793-796. DOI: 10.1116/1.586117 |
0.434 |
|
| 1992 |
Hu K, Chen L, Kaviani K, Chen P, Madhukar A. All-Optical Photonic Switches Using Integrated Inverted Asymmetric Fabry-Perot Modulators and Heterojunction Phototransistors Ieee Photonics Technology Letters. 4: 263-266. DOI: 10.1109/68.122387 |
0.335 |
|
| 1992 |
Rich DH, Rajkumar KC, Chen L, Madhukar A, Grunthaner FJ. Near-infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs Applied Physics Letters. 61: 222-224. DOI: 10.1063/1.108225 |
0.393 |
|
| 1992 |
Mahgerefteh D, Yang C, Chen L, Hu K, Chen W, Garmire E, Madhukar A. Picosecond time‐resolved measurements of electroabsorption in an InGaAs/GaAs multiple quantum well p‐i‐n modulator Applied Physics Letters. 61: 2592-2594. DOI: 10.1063/1.108137 |
0.414 |
|
| 1992 |
Ogale SB, Madhukar A. Adatom processes near step-edges and evolution of long range order in semiconductor alloys grown from vapor phase Applied Physics Letters. 60: 2095-2097. DOI: 10.1063/1.107100 |
0.304 |
|
| 1992 |
Rajkumar KC, Kaviani K, Chen J, Chen P, Madhukar A. Nanofeatures on GaAs (111)B via photolithography Applied Physics Letters. 60: 850-852. DOI: 10.1063/1.106534 |
0.371 |
|
| 1991 |
Chen L, Chen W, Rajkumar KC, Hu K, Madhukar A. Observation of the Influence of Strain Induced deep Level Defects on the Electroabsorption Characteristics of InGaAs/GaAs (100) Multiple Quantum well Structures and Implications for Light Modulators Mrs Proceedings. 240. DOI: 10.1557/Proc-240-621 |
0.423 |
|
| 1991 |
Hu K, Chen L, Madhukar A, Chen P, Xie Q, Rajkumar KC, Kaviani K. Growth, Behavior, and Applications of Strained InGaAs/GaAs Multiple Quantum well Based Asymmetric Fabry-Perot Reflection Modulators Mrs Proceedings. 240. DOI: 10.1557/Proc-240-615 |
0.423 |
|
| 1991 |
Kapre RM, Hu K, Chen L, Guha S, Madhukar A. Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching Mrs Proceedings. 228. DOI: 10.1557/Proc-228-219 |
0.419 |
|
| 1991 |
Chen L, Hu K, Rajkumar KC, Guhae S, Kapre R, Madhukar A. Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors Mrs Proceedings. 228. DOI: 10.1557/Proc-228-213 |
0.439 |
|
| 1991 |
Chen P, Rajkumar KC, Madhukar A. Relation between reflection high-energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2312-2316. DOI: 10.1116/1.585739 |
0.351 |
|
| 1991 |
Kim D, Madhukar A. Low-temperature C-V characteristics of Si-doped Al0.3Ga 0.7As and normal n-GaAs/N-Al0.3Ga0.7As isotype heterojunctions grown via molecular beam epitaxy Journal of Applied Physics. 70: 6877-6882. DOI: 10.1063/1.349811 |
0.329 |
|
| 1991 |
Hu K, Chen L, Madhukar A, Chen P, Kyriakakis C, Karim Z, Tanguay AR. Erratum: Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator [Appl. Phys. Lett. 59, 1664 (1991)] Applied Physics Letters. 59: 3660-3660. DOI: 10.1063/1.106376 |
0.327 |
|
| 1991 |
Hu K, Chen L, Madhukar A, Chen P, Rajkumar KC, Kaviani K, Karim Z, Kyriakakis C, Tanguay AR. High contrast ratio asymmetric Fabry-Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells Applied Physics Letters. 59: 1108-1110. DOI: 10.1063/1.106359 |
0.451 |
|
| 1991 |
Chen L, Kapre RM, Hu K, Madhukar A. High-contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry-Perot modulator, detector, and resonant tunneling diode Applied Physics Letters. 59: 1523-1525. DOI: 10.1063/1.106270 |
0.403 |
|
| 1991 |
Hu K, Chen L, Madhukar A, Chen P, Kyriakakis C, Karim Z, Tanguay AR. Inverted cavity GaAs/InGaAs asymmetric Fabry-Perot reflection modulator Applied Physics Letters. 59: 1664-1666. DOI: 10.1063/1.106261 |
0.419 |
|
| 1991 |
Ogale SB, Madhukar A. Surface-relaxation-controlled mechanism for occurrence of long range ordering in III-V semiconductor alloys grown by molecular beam epitaxy Applied Physics Letters. 59: 1356-1358. DOI: 10.1063/1.105307 |
0.331 |
|
| 1991 |
Chen P, Rajkumar KC, Madhukar A. Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)B substrates Applied Physics Letters. 58: 1771-1773. DOI: 10.1063/1.105086 |
0.345 |
|
| 1991 |
Kapre RM, Madhukar A, Guha S. Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperature Applied Physics Letters. 58: 2255-2257. DOI: 10.1063/1.104943 |
0.338 |
|
| 1991 |
Kapre RM, Madhukar A, Guha S. Highly strained pseudomorphic InxGa1-xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates Journal of Crystal Growth. 111: 1110-1115. DOI: 10.1016/0022-0248(91)91143-X |
0.425 |
|
| 1991 |
Guha S, Rajkumar KC, Madhukar A. The nature and control of morphology and the formation of defects in InGaAs epilayers and InAs/GaAs superlattices grown via MBE on GaAs(100) Journal of Crystal Growth. 111: 434-439. DOI: 10.1016/0022-0248(91)91015-3 |
0.355 |
|
| 1991 |
Chen L, Rajkumar KC, Madhukar A, Chen W, Guha S, Kaviani K. Realization of sharp excitonic features in highly strained GaAs/InxGa1-xAs multiple quantum wells grown on GaAs(100) substrates Journal of Crystal Growth. 111: 424-428. DOI: 10.1016/0022-0248(91)91013-Z |
0.48 |
|
| 1990 |
Rajkumar KC, Chen P, Madhukar A. Reflection Electron Diffraction and Structural Behavior of GaAs/GaAs (111)B Grown Via MBE Mrs Proceedings. 208: 193. DOI: 10.1557/Proc-208-193 |
0.336 |
|
| 1990 |
Guha S, Madhukar A, Kapre R, Rajkumar KC. Initial Stages of Molecular Beam Epitaxical Growth of Highly Strained Inxga1-XAs on Gaas (100) Mrs Proceedings. 202. DOI: 10.1557/Proc-202-519 |
0.33 |
|
| 1990 |
Kapre R, Madhukar A, Guha S. Ino.25Gao.75As/AlAs-Based Resonant Tunneling Diodes Grown on Prepatterned and Non-Patterned GaAs (100) Substrates Ieee Electron Device Letters. 11: 270-272. DOI: 10.1109/55.55277 |
0.329 |
|
| 1990 |
Lao P, Tang WC, Rajkumar KC, Guha S, Madhukar A, Liu JK, Grunthaner FJ. Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si Journal of Applied Physics. 67: 6445-6453. DOI: 10.1063/1.345118 |
0.336 |
|
| 1990 |
Madhukar A, Rajkumar KC, Chen L, Guha S, Kaviani K, Kapre R. Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates Applied Physics Letters. 57: 2007-2009. DOI: 10.1063/1.103992 |
0.417 |
|
| 1990 |
Guha S, Madhukar A, Rajkumar KC. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa 1-xAs on GaAs(100) Applied Physics Letters. 57: 2110-2112. DOI: 10.1063/1.103914 |
0.344 |
|
| 1990 |
Chen L, Rajkumar KC, Madhukar A. Optical absorption and modulation behavior of strained In xGa1-xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy Applied Physics Letters. 57: 2478-2480. DOI: 10.1063/1.103835 |
0.437 |
|
| 1990 |
Kim D, Madhukar A, Hu KZ, Chen W. Realization of high mobilities at ultralow electron density in GaAs-Al 0.3Ga0.7As inverted heterojunctions Applied Physics Letters. 56: 1874-1876. DOI: 10.1063/1.103074 |
0.35 |
|
| 1990 |
Guha S, Madhukar A, Chen L. Defect reduction in strained InxGa1-xAs via growth on GaAs(100) substrates patterned to submicron dimensions Applied Physics Letters. 56: 2304-2306. DOI: 10.1063/1.102948 |
0.363 |
|
| 1990 |
Kapre R, Madhukar A, Kaviani K, Guha S, Rajkumar KC. Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak-to-valley ratios at room temperature Applied Physics Letters. 56: 922-924. DOI: 10.1063/1.102626 |
0.336 |
|
| 1990 |
Rajkumar KC, Madhukar A, Liu JK, Grunthaner FJ. Observation of a correlation between twin orientation and substrate step direction in thin GaAs films grown on intentionally misoriented Si (100) Applied Physics Letters. 56: 1160-1162. DOI: 10.1063/1.102549 |
0.347 |
|
| 1990 |
Echternach PM, Hu K, Madhukar A, Bozler HM. Transport measurements on a high mobility, ultralow carrier concentration inverted GaAs/AlGaAs heterostructure Physica B: Condensed Matter. 165: 871-872. DOI: 10.1016/S0921-4526(09)80021-5 |
0.341 |
|
| 1989 |
Guha S, Madhukar A, Kaviani K, Chen L, Kuchibhotla R, Kapre R, Hyugachi M, Xie Z. Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100) Mrs Proceedings. 145. DOI: 10.1557/Proc-145-27 |
0.371 |
|
| 1989 |
Ghaisas SV, Madhukar A. Surface kinetics and growth interruption in molecular-beam epitaxy of compound semiconductors: A computer simulation study Journal of Applied Physics. 65: 3872-3876. DOI: 10.1063/1.343350 |
0.36 |
|
| 1989 |
Lao P, Tang WC, Madhukar A, Chen P. A combined single-phonon Raman and photoluminescence study of direct and indirect band-gap AlxGa1-xAs alloys grown by molecular-beam epitaxy Journal of Applied Physics. 65: 1676-1682. DOI: 10.1063/1.342938 |
0.3 |
|
| 1989 |
Ghaisas SV, Madhukar A. Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: A computer simulation study Journal of Applied Physics. 65: 1888-1892. DOI: 10.1063/1.342899 |
0.352 |
|
| 1988 |
Madhukar A, Ghaisas SV. The nature of molecular beam epitaxial growth examined via computer simulations Critical Reviews in Solid State and Materials Sciences. 14: 1-130. DOI: 10.1080/01611598808241266 |
0.338 |
|
| 1988 |
Cho NM, Kim DJ, Madhukar A, Newman PG, Smith DD, Aucoin T, Iafrate GJ. Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions Applied Physics Letters. 52: 2037-2039. DOI: 10.1063/1.99574 |
0.336 |
|
| 1988 |
Ogale SB, Thomsen M, Madhukar A. Surface kinetic processes and the morphology of equilibrium GaAs(100) surfaces: A Monte Carlo study Applied Physics Letters. 52: 723-725. DOI: 10.1063/1.99359 |
0.305 |
|
| 1988 |
Tang WC, Lao PD, Madhukar A, Cho NM. Combined Rayleigh and Raman scattering study of AlxGa 1-xAs grown via molecular beam epitaxy under reflection high-energy electron diffraction determined growth conditions Applied Physics Letters. 52: 42-44. DOI: 10.1063/1.99311 |
0.311 |
|
| 1987 |
Cho NM, Ogale SB, Madhukar A. Electron transport in a one-side-modulation-doped single-quantum-well structure: Remote-ion-scattering contribution Physical Review B. 36: 6472-6478. DOI: 10.1103/PhysRevB.36.6472 |
0.352 |
|
| 1987 |
Kim JY, Chen P, Voillot F, Madhukar A. Photoluminescence and reflection high-energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al 0.33Ga0.67As(100) single quantum wells Applied Physics Letters. 50: 739-741. DOI: 10.1063/1.98084 |
0.44 |
|
| 1987 |
Cho NM, Chen P, Madhukar A. Specular beam intensity behavior in reflection high-energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga 0.7As on GaAs(100) and implications for inverted interfaces Applied Physics Letters. 50: 1909-1911. DOI: 10.1063/1.97683 |
0.319 |
|
| 1987 |
Voillot F, Madhukar A, Tang WC, Thomsen M, Kim JY, Chen P. Growth kinetics of molecular beam epitaxially grown GaAs/Al0.3Ga0.7As (100) normal and inverted interfaces in thin single quantum well structures examined via photoluminescence studies Applied Physics Letters. 50: 194-196. DOI: 10.1063/1.97659 |
0.409 |
|
| 1987 |
Ogale SB, Madhukar A, Cho NM. Influence of transverse electric field on the photoluminescence linewidth of excitonic transition in quantum wells: Alloy disorder and composition fluctuation contributions Journal of Applied Physics. 62: 1381-1384. DOI: 10.1063/1.339829 |
0.398 |
|
| 1987 |
LAO PD, TANG WC, MADHUKAR A, VOILLOT F. RESONANT MIXING BETWEEN ELECTRONIC AND OPTICAL VIBRATIONAL STATES OF A QUANTUM WELL STRUCTURE Le Journal De Physique Colloques. 48: C5-121-C5-126. DOI: 10.1051/Jphyscol:1987522 |
0.389 |
|
| 1987 |
Voillot F, Kim JY, Tang WC, Madhukar A, Chen P. Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin GaAsAxGa1−xAs(100) single quantum wells grown by MBE under RHEED determined conditions☆ Superlattices and Microstructures. 3: 313-323. DOI: 10.1016/0749-6036(87)90079-6 |
0.404 |
|
| 1987 |
Madhukar A, Chen P, Voillot F, Thomsen M, Kim J, Tang W, Ghaisas S. A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures Journal of Crystal Growth. 81: 26-33. DOI: 10.1016/0022-0248(87)90359-9 |
0.445 |
|
| 1987 |
Thomsen M, Ghaisas SV, Madhukar A. Examination of the nature of lattice matched III-V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces Journal of Crystal Growth. 84: 79-97. DOI: 10.1016/0022-0248(87)90115-1 |
0.347 |
|
| 1986 |
Yen MY, Lee TC, Chen P, Madhukar A. Kinetics of the formation of normal and inverted molecular beam epitaxial interfaces: A reflection high‐energy electron diffraction dynamics study of GaAs/AlxGa1−xAs(100) multiple quantum wells Journal of Vacuum Science & Technology B. 4: 590-593. DOI: 10.1116/1.583382 |
0.391 |
|
| 1986 |
Lee TC, Yen MY, Chen P, Madhukar A. Kinetic processes in molecular beam epitaxy of GaAs(100) and AlAs(100) examined via static and dynamic behavior of reflection high‐energy electron‐diffraction intensities Journal of Vacuum Science and Technology. 4: 884-888. DOI: 10.1116/1.573998 |
0.334 |
|
| 1986 |
Ghaisas SV, Madhukar A. Role of surface molecular reactions in influencing the growth mechanism and the nature of nonequilibrium surfaces: A monte carlo study of molecular-beam epitaxy Physical Review Letters. 56: 1066-1069. DOI: 10.1103/Physrevlett.56.1066 |
0.316 |
|
| 1986 |
Chen P, Madhukar A, Kim JY, Lee TC. Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growth Applied Physics Letters. 48: 650-652. DOI: 10.1063/1.96733 |
0.321 |
|
| 1986 |
Voillot F, Madhukar A, Kim JY, Chen P, Cho NM, Tang WC, Newman PG. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells Applied Physics Letters. 48: 1009-1011. DOI: 10.1063/1.96619 |
0.444 |
|
| 1986 |
Vasquez RP, Madhukar A, Grunthaner FJ, Naiman ML. An x-ray photoelectron spectroscopy study of the thermal nitridation of SiO2/Si Journal of Applied Physics. 60: 226-233. DOI: 10.1063/1.337801 |
0.306 |
|
| 1986 |
Vasquez RP, Madhukar A, Grunthaner FJ, Naiman ML. Distribution of nitrogen and defects in SiOxNy/Si structures formed by the thermal nitridation of SiO2/Si Journal of Applied Physics. 59: 972-975. DOI: 10.1063/1.336576 |
0.303 |
|
| 1986 |
Yen MY, Madhukar A, Lewis BF, Fernandez R, Eng L, Grunthaner FJ. Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy Surface Science. 174: 606-614. DOI: 10.1016/0039-6028(86)90480-2 |
0.395 |
|
| 1986 |
Lee TC, Yen MY, Chen P, Madhukar A. The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1-xAs(100) modulated structures Surface Science. 174: 55-64. DOI: 10.1016/0039-6028(86)90385-7 |
0.361 |
|
| 1985 |
Madhukar A, Ghaisas SV. Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity Applied Physics Letters. 47: 247-249. DOI: 10.1063/1.96234 |
0.348 |
|
| 1985 |
Grunthaner FJ, Yen MY, Fernandez R, Lee TC, Madhukar A, Lewis BF. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures Applied Physics Letters. 46: 983-985. DOI: 10.1063/1.95788 |
0.44 |
|
| 1985 |
Madhukar A, Lee TC, Yen MY, Chen P, Kim JY, Ghaisas SV, Newman PG. Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study Applied Physics Letters. 46: 1148-1150. DOI: 10.1063/1.95739 |
0.403 |
|
| 1984 |
Lewis BF, Lee TC, Grunthaner FJ, Madhukar A, Fernandez R, Maserjian J. RHEED OSCILLATION STUDIES OF MBE GROWTH KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING InGaAs GROWTH ON GaAs(100) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 419-424. DOI: 10.1116/1.582887 |
0.335 |
|
| 1984 |
Ogale SB, Madhukar A. Alloy disorder scattering contribution to low-temperature electron mobility in semiconductor quantum well structures Journal of Applied Physics. 56: 368-374. DOI: 10.1063/1.333974 |
0.343 |
|
| 1984 |
Ogale SB, Madhukar A. Quantum size effect in the transport of electrons in semiconductor quantum well structures Journal of Applied Physics. 55: 483-486. DOI: 10.1063/1.333050 |
0.474 |
|
| 1983 |
Singh J, Madhukar A. Prediction of kinetically controlled surface roughening: A Monte Carlo computer-simulation study Physical Review Letters. 51: 794-797. DOI: 10.1103/Physrevlett.51.794 |
0.305 |
|
| 1983 |
Madhukar A. Far from equilibrium vapour phase growth of lattice matched III-V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations Surface Science. 132: 344-374. DOI: 10.1016/0167-2584(83)90167-6 |
0.324 |
|
| 1982 |
KIM JY, MADHUKAR A. ELECTRONIC STRUCTURE OF GAP-ALP(100) SUPERLATTICES J Vac Sci Technol. 528-530. DOI: 10.1116/1.571753 |
0.309 |
|
| 1982 |
Horovitz B, Grabowski M, Madhukar A. A theory of cyclotron resonance in a two-dimensional quantum Wigner crystal Surface Science. 113: 318-320. DOI: 10.1016/0167-2584(82)90486-8 |
0.358 |
|
| 1981 |
Grunthaner FJ, Lewis BF, Maserjian J, Madhukar A. CHEMICAL STRUCTURE OF TRAPPED CHARGE SITES FORMED AT THE Si/SiO//2 INTERFACE BY IONIZING RADIATION AS DETERMINED BY XPS Journal of Vacuum Science &Amp; Technology. 20: 747-750. DOI: 10.1116/1.571449 |
0.349 |
|
| 1981 |
Das Sarma S, Madhukar A. IDEAL VACANCY INDUCED BAND GAP LEVELS IN LATTICE MATCHED THIN SUPERLATTICES: THE GaAs-AlAs(100) AND GaSb-InAs(100) SYSTEMS Journal of Vacuum Science &Amp; Technology. 19: 447-452. DOI: 10.1116/1.571036 |
0.322 |
|
| 1981 |
Das Sarma S, Madhukar A. Study of the ideal-vacancy-induced neutral deep levels in III-V compound semiconductors and their ternary alloys Physical Review B. 24: 2051-2068. DOI: 10.1103/Physrevb.24.2051 |
0.321 |
|
| 1981 |
Das Sarma S, Madhukar A. Collective modes of spatially separated, two-component, two-dimensional plasma in solids Physical Review B. 23: 805-815. DOI: 10.1103/Physrevb.23.805 |
0.326 |
|
| 1981 |
Singh J, Madhukar A. The origin and nature of silicon band-gap states at the Si/SiO2 interface Applied Physics Letters. 38: 884-886. DOI: 10.1063/1.92208 |
0.326 |
|
| 1981 |
Sarma SD, Madhukar A. Cation and anion ideal vacancy induced gap levels in some III-V compound semiconductors Solid State Communications. 38: 183-186. DOI: 10.1016/0038-1098(81)91132-7 |
0.305 |
|
| 1981 |
Madhukar A, Delgado J. The electronic structure of Si/GaP(110) interface and superlattice Solid State Communications. 37: 199-203. DOI: 10.1016/0038-1098(81)91013-9 |
0.372 |
|
| 1980 |
Madhukar A, Sarma SD. INTRINSIC AND EXTRINSIC INTERFACE STATES AT LATTICE MATCHED INTERFACES BETWEEN III-V COMPOUND SEMICONDUCTORS: THE InAs/GaSb(110) SYSTEM Journal of Vacuum Science &Amp; Technology. 17: 1120-1127. DOI: 10.1116/1.570626 |
0.319 |
|
| 1980 |
Grunthaner FJ, Lewis BF, Zamini N, Maserjian J, Madhukar A. XPS Studies of Structure-Induced Radiation Effects at the Si/SiO<inf>2</inf> Interface Ieee Transactions On Nuclear Science. 27: 1640-1646. DOI: 10.1109/Tns.1980.4331082 |
0.355 |
|
| 1980 |
Das Sarma S, Madhukar A. Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems Physical Review B. 22: 2823-2836. DOI: 10.1103/Physrevb.22.2823 |
0.317 |
|
| 1980 |
Dandekar NV, Madhukar A, Lowy DN. Study of the electronic structure of model (110) surfaces and interfaces of semi-infinite III-V compound semiconductors: The GaSb-InAs system Physical Review B. 21: 5687-5705. DOI: 10.1103/Physrevb.21.5687 |
0.336 |
|
| 1980 |
Nucho RN, Madhukar A. Electronic structure of SiO2: -quartz and the influence of local disorder Physical Review B. 21: 1576-1588. DOI: 10.1103/Physrevb.21.1576 |
0.311 |
|
| 1980 |
Madhukar A, Sarma SD. Electron-phonon coupling and resonant magneto-phonon effect in optical behaviour of two-dimensionally confined charge carriers☆ Surface Science. 98: 135-142. DOI: 10.1016/0039-6028(80)90484-7 |
0.378 |
|
| 1979 |
Dandekar NV, Madhukar A, Lowy DN. ELECTRONIC STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES: APPLICATION OF InAs/GaSb(110) Journal of Vacuum Science &Amp; Technology. 16: 1364-1369. DOI: 10.1116/1.570200 |
0.329 |
|
| 1979 |
Grunthaner FJ, Grunthaner PJ, Vasquez RP, Lewis BF, Maserjian J, Madhukar A. High-resolution x-ray photoelectron spectroscopy as a probe of local atomic structure: Application to amorphous SiO2 and the Si-SiO2 interface Physical Review Letters. 43: 1683-1686. DOI: 10.1103/Physrevlett.43.1683 |
0.314 |
|
| 1979 |
Madhukar A, Nucho RN. The electronic structure of InAs/GaSb(001) superlattices-two dimensional effects Solid State Communications. 32: 331-336. DOI: 10.1016/0038-1098(79)90959-1 |
0.3 |
|
| 1979 |
Horovitz B, Madhukar A. Electron-phonon interaction and cyclotron resonance in two-dimensional electron gas Solid State Communications. 32: 695-698. DOI: 10.1016/0038-1098(79)90731-2 |
0.343 |
|
| 1978 |
Nucho RN, Madhukar A. TIGHT-BINDING STUDY OF THE ELECTRONIC STRUCTURE OF THE InAs-GaSb (001) SUPERLATTICE J Vac Sci Technol. 15: 1530-1534. DOI: 10.1116/1.569782 |
0.326 |
|
| 1978 |
Lowy DN, Madhukar A. Study of the interface electronic structure of a model metal-semiconductor interface Physical Review B. 17: 3832-3843. DOI: 10.1103/Physrevb.17.3832 |
0.32 |
|
| 1976 |
Bell B, Cohen MH, Gomer R, Madhukar A. Comment on "quantum theory of electron stimulated desorption" by W. Brenig Surface Science. 61: 656-658. DOI: 10.1016/0039-6028(76)90073-X |
0.37 |
|
| 1973 |
Madhukar A. Chemisorption on transition-metal surfaces: Electronic structure Physical Review B. 8: 4458-4463. DOI: 10.1103/Physrevb.8.4458 |
0.316 |
|
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