| Year |
Citation |
Score |
| 2019 |
Soleymani S, Güngördü MZ, Kung P, Kim SM. Ultra-High Efficiency and Broad Band Operation of Infrared Metasurface Anomalous Reflector based on Graphene Plasmonics. Scientific Reports. 9: 1249. PMID 30718638 DOI: 10.1038/S41598-018-37562-Y |
0.319 |
|
| 2019 |
Nguyen PX, Garg S, Tse W, Pan S, Kung P, Kim SM. Polarization dependent trion dynamics in large area CVD grown 2D monolayer MoS2 by terahertz time-domain spectroscopy Journal of Physics D: Applied Physics. 52: 155104. DOI: 10.1088/1361-6463/Ab0168 |
0.337 |
|
| 2019 |
Mohanta A, Simmons JG, Shen G, Kim SM, Kung P, Everitt HO. Al doping in ZnO nanowires enhances ultraviolet emission and suppresses broad defect emission Journal of Luminescence. 211: 264-270. DOI: 10.1016/J.Jlumin.2019.03.049 |
0.377 |
|
| 2017 |
Balci S, Czaplewski DA, Jung IW, Kim J, Hatami F, Kung P, Kim SM. High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-7. DOI: 10.1109/Jstqe.2017.2649465 |
0.388 |
|
| 2017 |
Hokmabadi MP, Tareki A, Rivera E, Kung P, Lindquist RG, Kim SM. Investigation of tunable terahertz metamaterial perfect absorber with anisotropic dielectric liquid crystal Aip Advances. 7: 015102. DOI: 10.1063/1.4973638 |
0.309 |
|
| 2016 |
Barradas NP, García Núñez C, Redondo-Cubero A, Shen G, Kung P, Pau JL. Analytical simulation of RBS spectra of nanowire samples Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 371: 116-120. DOI: 10.1016/J.Nimb.2015.08.080 |
0.301 |
|
| 2016 |
Kim JH, Hokmabadi MP, Balci S, Rivera E, Wilbert D, Kung P, Kim SM. Investigation of robust flexible conformal THz perfect metamaterial absorber Applied Physics a: Materials Science and Processing. 122. DOI: 10.1007/S00339-016-9857-5 |
0.311 |
|
| 2015 |
Marín AG, Núñez CG, Rodríguez P, Shen G, Kim SM, Kung P, Piqueras J, Pau JL. Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays. Nanotechnology. 26: 115502. PMID 25721912 DOI: 10.1088/0957-4484/26/11/115502 |
0.414 |
|
| 2015 |
Pau JL, Waters J, Rivera E, Kim SM, Kung P. Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact Ieee Electron Device Letters. 36: 814-816. DOI: 10.1109/Led.2015.2442678 |
0.385 |
|
| 2014 |
García Núñez C, Braña AF, Pau JL, Ghita D, García BJ, Shen G, Wilbert DS, Kim SM, Kung P. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy Journal of Applied Physics. 115: 034307. DOI: 10.1063/1.4862742 |
0.379 |
|
| 2014 |
García Núñez C, Pau JL, Ruíz E, García Marín A, García BJ, Piqueras J, Shen G, Wilbert DS, Kim SM, Kung P. Enhanced fabrication process of zinc oxide nanowires for optoelectronics Thin Solid Films. 555: 42-47. DOI: 10.1016/J.Tsf.2013.12.011 |
0.402 |
|
| 2014 |
Mohanta A, Simmons JG, Everitt HO, Shen G, Margaret Kim S, Kung P. Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition Journal of Luminescence. 146: 470-474. DOI: 10.1016/J.Jlumin.2013.10.028 |
0.373 |
|
| 2013 |
García Núñez C, García Marín A, Nanterne P, Piqueras J, Kung P, Pau JL. Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis. Nanotechnology. 24: 415702. PMID 24045231 DOI: 10.1088/0957-4484/24/41/415702 |
0.422 |
|
| 2013 |
Chen G, Sun G, Ding YJ, Prete P, Miccoli I, Lovergine N, Shtrikman H, Kung P, Livneh T, Spanier JE. Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy. Nano Letters. 13: 4152-7. PMID 23937245 DOI: 10.1021/Nl401737U |
0.396 |
|
| 2013 |
Hokmabadi MP, Wilbert DS, Kung P, Kim SM. Theoretical and experimental investigation of hybrid broadband terahertz metamaterial absorber Proceedings of Spie - the International Society For Optical Engineering. 8632. DOI: 10.1117/12.2005753 |
0.365 |
|
| 2013 |
Wilbert DS, Hokmabadi MP, Martinez J, Kung P, Kim SM. Terahertz metamaterials perfect absorbers for sensing and imaging Progress in Biomedical Optics and Imaging - Proceedings of Spie. 8585. DOI: 10.1117/12.2005709 |
0.393 |
|
| 2013 |
Shen G, Dawahre N, Waters J, Kim SM, Kung P. Growth, doping, and characterization of ZnO nanowire arrays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4807849 |
0.394 |
|
| 2013 |
Dawahre N, Shen G, Renfrow SN, Kim SM, Kung P. Atom probe tomography of AlInN/GaN HEMT structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4807321 |
0.358 |
|
| 2013 |
Wilbert DS, Hokmabadi MP, Kung P, Kim SM. Equivalent-circuit interpretation of the polarization insensitive performance of THz metamaterial absorbers Ieee Transactions On Terahertz Science and Technology. 3: 846-850. DOI: 10.1109/Tthz.2013.2285311 |
0.326 |
|
| 2013 |
García Núñez C, Braña AF, Pau JL, Ghita D, García BJ, Shen G, Wilbert DS, Kim SM, Kung P. Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.03.025 |
0.363 |
|
| 2012 |
Butler L, Wilbert DS, Baughman W, Balci S, Kung P, Kim SM, Heimbeck MS, Everitt HO. Design, simulation, and characterization of THz metamaterial absorber Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919625 |
0.321 |
|
| 2012 |
Kung P, Harris N, Shen G, Wilbert DS, Baughman W, Balci S, Dawahre N, Butler L, Rivera E, Nikles D, Kim SM. Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.914372 |
0.381 |
|
| 2012 |
Dawahre N, Shen G, Balci S, Baughman W, Wilbert DS, Harris N, Butler L, Martens R, Kim SM, Kung P. Atom probe tomography of zinc oxide nanowires Journal of Electronic Materials. 41: 801-808. DOI: 10.1007/S11664-011-1803-X |
0.417 |
|
| 2011 |
Wilbert DS, Shen G, Dawahre N, Kung P, Kim SM. High resolution, two-dimensional image mapping of ZnO nanowires by confocal microphotoluminescence and microraman spectroscopy. Journal of Nanoscience and Nanotechnology. 11: 5898-903. PMID 22121628 DOI: 10.1166/Jnn.2011.4348 |
0.407 |
|
| 2010 |
Park J, Park K, Lee J, Kim J, Kim SM, Kung P. Excellent Brightness with Shortening Lifetime of Textured Zn2SiO4:Mn2+Phosphor Films on Quartz Glass Japanese Journal of Applied Physics. 49: 042603. DOI: 10.1143/Jjap.49.042603 |
0.339 |
|
| 2010 |
Park K, Kim J, Kung P, Kim SM. New green phosphor (Ba1.2Ca0.8-xEu x)SiO4 for white-light-emitting diode Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.020214 |
0.348 |
|
| 2010 |
Park K, Choi N, Kim J, Kung P, Kim SM. Temperature and excitation power-resistant white-light emission of the -phase phosphor Solid State Communications. 150: 329-332. DOI: 10.1016/J.Ssc.2009.11.025 |
0.354 |
|
| 2010 |
Park K, Kim J, Kung P, Kim SM. Thermally stable deep-blue Ba1.2Ca0.8SiO4:Ce3+ phosphor for white-light-emitting diode Journal of Luminescence. 130: 1292-1294. DOI: 10.1016/J.Jlumin.2010.02.041 |
0.395 |
|
| 2010 |
Choi N, Park K, Park B, Zhang X, Kim J, Kung P, Margaret Kim S. Eu2+–Mn2+ energy transfer in white-light-emitting T-phase (Ba,Ca)2SiO4:Eu2+, Mn2+ phosphor Journal of Luminescence. 130: 560-566. DOI: 10.1016/J.Jlumin.2009.10.031 |
0.316 |
|
| 2007 |
Minder K, Pau JL, McClintock R, Kung P, Bayram C, Razeghi M, Silversmith D. Scaling in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2772199 |
0.776 |
|
| 2007 |
Pau JL, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Muñoz E, Silversmith D. Geiger-mode operation of back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2759980 |
0.778 |
|
| 2007 |
McClintock R, Pau JL, Minder K, Bayram C, Kung P, Razeghi M. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 90. DOI: 10.1063/1.2720712 |
0.776 |
|
| 2007 |
Rogers D, Teherani F, Kung P, Minder K, Razeghi M. Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition Superlattices and Microstructures. 42: 322-326. DOI: 10.1016/J.Spmi.2007.04.075 |
0.8 |
|
| 2006 |
Jung WG, Jung SH, Kung P. Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane Proceedings of Spie - the International Society For Optical Engineering. 6127. DOI: 10.1088/0957-4484/17/1/010 |
0.359 |
|
| 2006 |
Rogers DJ, Teherani FH, Yasan A, Minder K, Kung P, Razeghi M. Electroluminescence at 375 nm from a ZnOGaN:Mgc-Al 2O 3 heterojunction light emitting diode Applied Physics Letters. 88. DOI: 10.1063/1.2195009 |
0.808 |
|
| 2006 |
Rogers DJ, Teherani FH, Monteiro T, Soares M, Neves A, Carmo M, Pereira S, Correia MR, Lusson A, Alves E, Barradas NP, Morrod JK, Prior KA, Kung P, Yasan A, et al. Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition Physica Status Solidi C: Conferences. 3: 1038-1041. DOI: 10.1002/Pssc.200564756 |
0.752 |
|
| 2005 |
McClintock R, Yasan A, Minder K, Kung P, Razeghi M. Avalanche multiplication in AlGaN based solar-blind photodetectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2140610 |
0.773 |
|
| 2005 |
McClintock R, Mayes K, Yasan A, Shiell D, Kung P, Razeghi M. 320×256 solar-blind focal plane arrays based on AlxGa1-xN Applied Physics Letters. 86: 011117-1-011117-3. DOI: 10.1063/1.1846936 |
0.773 |
|
| 2004 |
McClintock R, Yasan A, Mayes K, Shiell D, Darvish SR, Kung P, Razeghi M. High quantum efficiency AlGaN solar-blind p-i-n photodiodes Applied Physics Letters. 84: 1248-1250. DOI: 10.1063/1.1650550 |
0.799 |
|
| 2004 |
Mayes K, Yasan A, McClintock R, Shiell D, Darvish SR, Kung P, Razeghi M. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well Applied Physics Letters. 84: 1046-1048. DOI: 10.1063/1.1647273 |
0.813 |
|
| 2004 |
Razeghi M, Yasan A, McClintock R, Mayes K, Shiell D, Darvish SR, Kung P. Review of III-nitride optoelectronic materials for light emission and detection Physica Status Solidi (C). 1: S141-S148. DOI: 10.1002/Pssc.200405133 |
0.827 |
|
| 2003 |
Razeghi M, Yasan A, McClintock R, Mayes K, Darvish SR, Kung P. High power deep UV AlGaN light-emitting diodes Frontiers in Optics. DOI: 10.1364/Fio.2003.Pdp9 |
0.781 |
|
| 2003 |
Yasan A, McClintock R, Mayes K, Shiell D, Gautero L, Darvish SR, Kung P, Razegh M. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes Applied Physics Letters. 83: 4701-4703. DOI: 10.1063/1.1633019 |
0.785 |
|
| 2003 |
Yasan A, McClintock R, Mayes K, Kim DH, Kung P, Razeghi M. Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes Applied Physics Letters. 83: 4083-4085. DOI: 10.1063/1.1626808 |
0.788 |
|
| 2002 |
Yasan A, McClintock R, Mayes K, Darvish SR, Zhang H, Kung P, Razeghi M, Lee SK, Han JY. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire Applied Physics Letters. 81: 2151-2153. DOI: 10.1063/1.1508414 |
0.825 |
|
| 2002 |
Yasan A, McClintock R, Mayes K, Darvish SR, Kung P, Razeghi M. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm Applied Physics Letters. 81: 801-802. DOI: 10.1063/1.1497709 |
0.805 |
|
| 2002 |
Yasan A, McClintock R, Darvish SR, Lin Z, Mi K, Kung P, Razeghi M. Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices Applied Physics Letters. 80: 2108-2110. DOI: 10.1063/1.1463708 |
0.789 |
|
| 2002 |
Wang YG, Zhang Z, Dravid VP, Kung P, Razeghi M. Morphological characterization of selectively overgrown GaN via lateral epitaxy Journal of Materials Science. 37: 1951-1957. DOI: 10.1023/A:1015282711452 |
0.479 |
|
| 2001 |
Sandvik P, Mi K, Shahedipour F, McClintock R, Yasan A, Kung P, Razeghi M. AlxGa1-xN for solar-blind UV detectors Journal of Crystal Growth. 231: 366-370. DOI: 10.1016/S0022-0248(01)01467-1 |
0.81 |
|
| 2000 |
Walker D, Kumar V, Mi K, Sandvik P, Kung P, Zhang XH, Razeghi M. Solar-blind AlGaN photodiodes with very low cutoff wavelength Applied Physics Letters. 76: 403-405. DOI: 10.1063/1.125768 |
0.707 |
|
| 2000 |
Razeghi M, Sandvik P, Kung P, Walker D, Mi K, Zhang X, Kumar V, Diaz J, Shahedipour F. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications Materials Science and Engineering: B. 74: 107-112. DOI: 10.1016/S0921-5107(99)00544-9 |
0.689 |
|
| 2000 |
Kung P, Razeghi M. III-Nitride wide bandgap semiconductors: A survey of the current status and future trends of the material and device technology Opto-Electronics Review. 8: 201-239. |
0.469 |
|
| 1999 |
Hahn DN, Kiehne GT, Ketterson JB, Wong GKL, Kung P, Saxler A, Razeghi M. Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides Journal of Applied Physics. 85: 2497-2501. DOI: 10.1063/1.369611 |
0.478 |
|
| 1999 |
Streltsov AM, Moll KD, Gaeta AL, Kung P, Walker D, Razeghi M. Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode Applied Physics Letters. 75: 3778-3780. DOI: 10.1063/1.125453 |
0.633 |
|
| 1999 |
Monroy E, Hamilton M, Walker D, Kung P, Sánchez FJ, Razeghi M. High-quality visible-blind AlGaN p-i-n photodiodes Applied Physics Letters. 74: 1171-1173. DOI: 10.1063/1.123960 |
0.68 |
|
| 1999 |
Saxler A, Mitchel WC, Kung P, Razeghi M. Aluminum gallium nitride short-period superlattices doped with magnesium Applied Physics Letters. 74: 2023-2025. DOI: 10.1063/1.123744 |
0.518 |
|
| 1999 |
Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez FJ, Diaz J, Razeghi M. High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN Applied Physics Letters. 74: 762-764. DOI: 10.1063/1.123303 |
0.695 |
|
| 1999 |
Kung P, Walker D, Hamilton M, Diaz J, Razeghi M. Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates Applied Physics Letters. 74: 570-572. DOI: 10.1063/1.123148 |
0.656 |
|
| 1999 |
Lee I, Lee JJ, Kung P, Sanchez FJ, Razeghi M. Band-gap narrowing and potential fluctuation in Si-doped GaN Applied Physics Letters. 74: 102-104. DOI: 10.1063/1.122964 |
0.5 |
|
| 1998 |
Kung P, Saxler A, Walker D, Rybaltowski A, Zhang X, Diaz J, Razeghi M. GaInN/GaN multi-quantum well laser diodes grown by low-pressure metalorganic chemical vapor deposition Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000739 |
0.658 |
|
| 1998 |
Kung P, Zhang X, Walker D, Saxler AW, Razeghi M. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio High-Power Lasers and Applications. 3287: 214-220. DOI: 10.1117/12.304484 |
0.69 |
|
| 1998 |
Razeghi M, Saxler A, Kung P, Walker D, Zhang X, Rybaltowski A, Xiao Y, Yi H, Diaz J. Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 3284: 113-121. DOI: 10.1117/12.304463 |
0.629 |
|
| 1998 |
Walker D, Saxler A, Kung P, Zhang X, Hamilton M, Diaz J, Razeghi M. Visible blind GaN p-i-n photodiodes Applied Physics Letters. 72: 3303-3305. DOI: 10.1063/1.121631 |
0.667 |
|
| 1998 |
Kato T, Kung P, Saxler A, Sun C, Ohsato H, Razeghi M, Okuda T. Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN Journal of Crystal Growth. 183: 131-139. DOI: 10.1016/S0022-0248(97)00364-3 |
0.372 |
|
| 1997 |
Saxler AW, Kim KS, Walker D, Kung P, Zhang XR, Brown GJ, Mitchel WC, Razeghi M. Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN Materials Science Forum. 1229-1234. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1229 |
0.682 |
|
| 1997 |
Saxler AW, Kung P, Zhang XR, Walker D, Solomon J, Ahoujja M, Mitchel WC, Vydyanath HR, Razeghi M. GaN Doped with Sulfur Materials Science Forum. 1161-1166. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1161 |
0.657 |
|
| 1997 |
Saxler AW, Kung P, Zhang XR, Walker D, Solomon J, Mitchel WC, Razeghi M. GaN Grown Using Trimethylgallium and Triethylgallium Materials Science Forum. 1081-1086. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1081 |
0.691 |
|
| 1997 |
Saxler A, Walker D, Kung P, Zhang X, Razeghi M, Solomon J, Mitchel WC, Vydyanath HR. Comparison of trimethylgallium and triethylgallium for the growth of GaN Applied Physics Letters. 71: 3272-3274. DOI: 10.1063/1.120310 |
0.661 |
|
| 1997 |
Kim KS, Saxler A, Kung P, Razeghi M, Lim KY. Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition Applied Physics Letters. 71: 800-802. DOI: 10.1063/1.119650 |
0.41 |
|
| 1997 |
Walker D, Zhang X, Saxler A, Kung P, Xu J, Razeghi M. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition Applied Physics Letters. 70: 949-951. DOI: 10.1063/1.118450 |
0.594 |
|
| 1997 |
Kung P, Zhang X, Saxler A, Walker D, Razeghi M, Qian W, Dravid V. MOCVD growth of high quality GaNAlGaN based structures on Al2O3 substrates with dislocation density less than 107cm− 2 Journal of the European Ceramic Society. 17: 1781-1785. DOI: 10.1016/S0955-2219(97)00076-9 |
0.615 |
|
| 1997 |
Kato T, Kung P, Saxler A, Sun C, Ohsato H, Razeghi M, Okuda T. Morphology of twinned GaN grown on (11·0) sapphire substrates Solid-State Electronics. 41: 227-229. DOI: 10.1016/S0038-1101(96)00205-5 |
0.387 |
|
| 1997 |
Kato T, Ohsato H, Okuda T, Kung P, Saxler A, Sun C, Razeghi M. Simultaneous growth of two different oriented GaN epilayers on (1 1 · 0) sapphire I. Morphology and orientation Journal of Crystal Growth. 173: 244-248. DOI: 10.1016/S0022-0248(96)00908-6 |
0.389 |
|
| 1996 |
Zhang X, Walker D, Saxler A, Kung P, Xu J, Razeghi M. Demonstration of an Electronic Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor The Japan Society of Applied Physics. 1996: 230-232. DOI: 10.7567/Ssdm.1996.C-2-4 |
0.614 |
|
| 1996 |
Kung P, Saxler A, Walker D, Zhang X, Lavado R, Kim K, Razeghi M. AlxGa1-xN-Based Materials and Heterostructures Mrs Proceedings. 449. DOI: 10.1557/Proc-449-79 |
0.592 |
|
| 1996 |
Saxler A, Capano MA, Mitchel WC, Kung P, Zhang X, Walker D, Razeghi M. High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates Mrs Proceedings. 449. DOI: 10.1557/Proc-449-477 |
0.653 |
|
| 1996 |
Zhang X, Kung P, Saxler A, Walker D, Razeghi M. Observation of room temperature surface‐emitting stimulated emission from GaN:Ge by optical pumping Journal of Applied Physics. 80: 6544-6546. DOI: 10.1063/1.363674 |
0.645 |
|
| 1996 |
Kung P, Saxler A, Zhang X, Walker D, Lavado R, Razeghi M. Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates Applied Physics Letters. 69: 2116-2118. DOI: 10.1063/1.116898 |
0.616 |
|
| 1996 |
Walker D, Zhang X, Kung P, Saxler A, Javadpour S, Xu J, Razeghi M. AlGaN ultraviolet photoconductors grown on sapphire Applied Physics Letters. 68: 2100-2101. DOI: 10.1063/1.115597 |
0.696 |
|
| 1996 |
Zhang X, Walker D, Saxler A, Kung P, Xu J, Razeghi M. Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition Electronics Letters. 32: 1622. DOI: 10.1049/El:19961061 |
0.654 |
|
| 1995 |
Walker D, Zhang X, Kung P, Saxler A, Xu J, Razeghi M. Spectral Response of GaN P-N Junction Photovoltaic Structures Mrs Proceedings. 395. DOI: 10.1557/Proc-395-955 |
0.67 |
|
| 1995 |
Zhang X, Kung P, Walker D, Saxler A, Razeghi M. Growth of GaN without Yellow Luminescence Mrs Proceedings. 395. DOI: 10.1557/Proc-395-625 |
0.66 |
|
| 1995 |
Zhang X, Kung P, Saxler A, Walker D, Wang Τ, Razeghi M. Photoluminescence Study of GaN Acta Physica Polonica A. 88: 601-606. DOI: 10.12693/Aphyspola.88.601 |
0.662 |
|
| 1995 |
Kung P, Zhang X, Walker D, Saxler A, Piotrowski J, Rogalski A, Razeghi M. Kinetics of photoconductivity in n‐type GaN photodetector Applied Physics Letters. 67: 3792-3794. DOI: 10.1063/1.115385 |
0.685 |
|
| 1995 |
Zhang X, Kung P, Saxler A, Walker D, Wang TC, Razeghi M. Growth of AlxGa1−xN:Ge on sapphire and silicon substrates Applied Physics Letters. 67: 1745-1747. DOI: 10.1063/1.115036 |
0.662 |
|
| 1995 |
Zhang X, Kung P, Walker D, Piotrowski J, Rogalski A, Saxler A, Razeghi M. Photovoltaic effects in GaN structures with p‐n junctions Applied Physics Letters. 67: 2028-2030. DOI: 10.1063/1.114776 |
0.684 |
|
| 1995 |
Kung P, Saxler A, Zhang X, Walker D, Wang TC, Ferguson I, Razeghi M. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates Applied Physics Letters. 66: 2958-2960. DOI: 10.1063/1.114242 |
0.677 |
|
| 1994 |
Sun CJ, Kung P, Saxler A, Ohsato H, Bigan E, Razeghi M, Gaskill DK. Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H‐SiC substrates Journal of Applied Physics. 76: 236-241. DOI: 10.1063/1.357133 |
0.404 |
|
| 1994 |
Sun CJ, Kung P, Saxler A, Ohsato H, Haritos K, Razeghi M. A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate Journal of Applied Physics. 75: 3964-3967. DOI: 10.1063/1.356017 |
0.498 |
|
| 1994 |
Kung P, Sun CJ, Saxler A, Ohsato H, Razeghi M. Crystallography of epitaxial growth of wurtzite‐type thin films on sapphire substrates Journal of Applied Physics. 75: 4515-4519. DOI: 10.1063/1.355943 |
0.485 |
|
| 1994 |
Saxler A, Kung P, Sun CJ, Bigan E, Razeghi M. High quality aluminum nitride epitaxial layers grown on sapphire substrates Applied Physics Letters. 64: 339-341. DOI: 10.1063/1.111168 |
0.551 |
|
| Show low-probability matches. |