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Ryan McClintock, Ph.D. - Publications

Affiliations: 
2007 Northwestern University, Evanston, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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111 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Dehzangi A, Wu D, McClintock R, Li J, Jaud A, Razeghi M. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation Photonics. 7: 68. DOI: 10.3390/Photonics7030068  0.534
2020 Dehzangi A, Wu D, McClintock R, Li J, Razeghi M. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation Applied Physics Letters. 116: 221103. DOI: 10.1063/5.0010273  0.496
2020 Li J, Dehzangi A, Wu D, McClintock R, Razeghi M. Type-II superlattice-based heterojunction phototransistors for high speed applications Infrared Physics & Technology. 108: 103350. DOI: 10.1016/J.Infrared.2020.103350  0.484
2019 Dehzangi A, McClintock R, Haddadi A, Wu D, Chevallier R, Razeghi M. Type-II superlattices base visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor. Scientific Reports. 9: 5003. PMID 30899055 DOI: 10.1038/S41598-019-41494-6  0.567
2019 Dehzangi A, McClintock R, Wu D, Li J, Johnson SM, Dial E, Razeghi M. High speed antimony-based superlattice photodetectors transferred on sapphire Applied Physics Express. 12: 116502. DOI: 10.7567/1882-0786/Ab4A8E  0.435
2019 Park J, McClintock R, Jaud A, Dehzangi A, Razeghi M. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire Applied Physics Express. 12: 095503. DOI: 10.7567/1882-0786/Ab3B2A  0.528
2019 Park J, McClintock R, Razeghi M. Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD Semiconductor Science and Technology. 34: 08LT01. DOI: 10.1088/1361-6641/Ab2C17  0.527
2019 Dehzangi A, Durlin Q, Wu D, McClintock R, Razeghi M. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors Semiconductor Science and Technology. 34: 06LT01. DOI: 10.1088/1361-6641/Ab1Bf8  0.531
2019 Dehzangi A, McClintock R, Wu D, Haddadi A, Chevallier R, Razeghi M. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices Applied Physics Letters. 114: 191109. DOI: 10.1063/1.5093560  0.504
2019 Robin Y, Ding K, Demir I, McClintock R, Elagoz S, Razeghi M. High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate Materials Science in Semiconductor Processing. 90: 87-91. DOI: 10.1016/J.Mssp.2018.09.027  0.633
2018 Chevallier R, Haddadi A, McClintock R, Dehzangi A, Lopez-Dominguez V, Khalili Amiri P, Razeghi M. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices Ieee Journal of Quantum Electronics. 54: 1-5. DOI: 10.1109/Jqe.2018.2871367  0.474
2018 Demir I, Li H, Robin Y, McClintock R, Elagoz S, Razeghi M. Sandwich method to grow high quality AlN by MOCVD Journal of Physics D: Applied Physics. 51: 085104. DOI: 10.1088/1361-6463/Aaa926  0.439
2017 Choi S, Rogers DJ, Sandana EV, Bove P, Teherani FH, Nenstiel C, Hoffmann A, McClintock R, Razeghi M, Look D, Gentle A, Phillips MR, Ton-That C. Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface. Scientific Reports. 7: 15912. PMID 29146950 DOI: 10.1038/S41598-017-14857-0  0.4
2017 Razeghi M, Zhou W, Slivken S, Lu QY, Wu D, McClintock R. Recent progress of quantum cascade laser research from 3 to 12  μm at the Center for Quantum Devices [Invited]. Applied Optics. 56: H30-H44. PMID 29091664 DOI: 10.1364/Ao.56.000H30  0.691
2017 Choi S, Rogers DJ, Sandana EV, Bove P, Teherani FH, Nenstiel C, Hoffmann A, McClintock R, Razeghi M, Look D, Gentle A, Phillips MR, Ton-That C. Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface. Scientific Reports. 7: 7457. PMID 28784987 DOI: 10.1038/S41598-017-07568-Z  0.502
2017 Puybaret R, Rogers D, El Gmili Y, Sundaram S, Jordan M, Li X, Patriarche G, Teherani F, Sandana E, Bove P, Voss P, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, et al. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology. PMID 28358724 DOI: 10.1088/1361-6528/Aa6A43  0.5
2017 McClintock R, Razeghi M. Wide band gap III-nitride semiconductor devices Journal of Lasers, Optics & Photonics. 4. DOI: 10.4172/2469-410X-C1-016  0.507
2017 Zhou W, Wu D, McClintock R, Slivken S, Razeghi M. High performance monolithic, broadly tunable mid-infrared quantum cascade lasers Optica. 4: 1228. DOI: 10.1364/OPTICA.4.001228  0.414
2017 Sandana VE, Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Imprinting of nanoporosity in lithium-doped nickel oxide through the use of sacrificial zinc oxide nanotemplates Proceedings of Spie. 10105. DOI: 10.1117/12.2263713  0.502
2017 Razeghi M, Zhou W, McClintock R, Wu D. Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers Optical Engineering. 57: 1. DOI: 10.1117/1.Oe.57.1.011018  0.488
2017 Barbillon G, Sandana VE, Humbert C, Bélier B, Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing Journal of Materials Chemistry C. 5: 3528-3535. DOI: 10.1039/C7Tc00098G  0.434
2016 Zhou W, Bandyopadhyay N, Wu D, McClintock R, Razeghi M. Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design. Scientific Reports. 6: 25213. PMID 27270634 DOI: 10.1038/Srep25213  0.417
2016 Rajan A, Rogers DJ, Ton-That C, Zhu L, Phillips MR, Sundaram S, Gautier S, Moudakir T, El-Gmili Y, Ougazzaden A, Sandana VE, Teherani FH, Bove P, Prior KA, Djebbour Z, ... McClintock R, et al. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/31/315105  0.545
2016 Demir İ, Robin Y, McClintock R, Elagoz S, Zekentes K, Razeghi M. Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy Physica Status Solidi (a). 214: 1600363. DOI: 10.1002/Pssa.201600363  0.496
2015 McClintock R, Razeghi M. Solar-blind photodetectors and focal plane arrays based on AlGaN Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195390  0.522
2015 McClintock R, Razeghi M. Growth of AlGaN on silicon substrates: A novel way to make back-illuminated ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195388  0.477
2015 McClintock R, Razeghi M. Ultraviolet avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2195387  0.559
2015 Sandana VE, Rogers DJ, Hosseini Teherani F, Bove P, Ben Sedrine N, Correia MR, Monteiro T, McClintock R, Razeghi M. Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2177427  0.5
2015 Rogers DJ, Sundaram S, El Gmili Y, Teherani FH, Bove P, Sandana V, Voss PL, Ougazzaden A, Rajan A, Prior KA, McClintock R, Razeghi M. Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2175897  0.531
2015 Lu QY, Razeghi M, Slivken S, Bandyopadhyay N, Bai Y, Zhou WJ, Chen M, Heydari D, Haddadi A, McClintock R, Amanti M, Sirtori C. High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μ m Applied Physics Letters. 106. DOI: 10.1063/1.4907646  0.741
2014 McClintock R, Razeghi M. GaN based optoelectronic devices: From ultraviolet detectors and visible emitters towards thz intersubband devices Ecs Transactions. 64: 19-26. DOI: 10.1149/06407.0019ecst  0.499
2014 Sandana VE, Rogers DJ, Hosseini Teherani F, Bove P, McClintock R, Razeghi M. Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2057620  0.428
2014 Rajan A, Sundaram S, El Gmili Y, Voss PL, Pantzas K, Moudakir T, Ougazzaden A, Rogers DJ, Hosseini Teherani F, Sandana VE, Bove P, Prior K, McClintock R, Razeghi M. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2043704  0.461
2014 Cicek E, McClintock R, Haddadi A, Rojas WAG, Razeghi M. High performance solar-blind ultraviolet 320 × 256 focal plane arrays based on AlxGa1-xN Ieee Journal of Quantum Electronics. 50: 591-595. DOI: 10.1109/Jqe.2014.2328434  0.587
2014 Rogers DJ, Sandana VE, Gautier S, Moudakir T, Abid M, Ougazzaden A, Teherani FH, Bove P, Molinari M, Troyon M, Peres M, Soares MJ, Neves AJ, Monteiro T, McGrouther D, ... ... McClintock R, et al. Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs Photonics and Nanostructures - Fundamentals and Applications. DOI: 10.1016/J.Photonics.2015.03.003  0.516
2014 Razeghi M, Haddadi A, Hoang AM, Chen G, Bogdanov S, Darvish SR, Callewaert F, Bijjam PR, McClintock R. Antimonide-based type II superlattices: A superior candidate for the third generation of infrared imaging systems Journal of Electronic Materials. 43: 2802-2807. DOI: 10.1007/S11664-014-3080-Y  0.732
2013 Rogers DJ, Bove P, Teherani FH, Pantzas K, Moudakir T, Orsal G, Patriarche G, Gautier S, Ougazzaden A, Sandana VE, McClintock R, Razeghi M. Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2010046  0.44
2013 Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Teherani FH, Rogers DJ, Sandana VE, Bove P, Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, et al. Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2009999  0.707
2013 Bayram C, Shiu KT, Zhu Y, Cheng CW, Sadana DK, Vashaei Z, Cicek E, McClintock R, Razeghi M. Gallium nitride on silicon for consumer and scalable photonics Proceedings of Spie - the International Society For Optical Engineering. 8631. DOI: 10.1117/12.2008788  0.658
2013 Cicek E, McClintock R, Cho CY, Rahnema B, Razeghi M. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% Applied Physics Letters. 103. DOI: 10.1063/1.4829065  0.54
2013 Cicek E, McClintock R, Cho CY, Rahnema B, Razeghi M. AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate Applied Physics Letters. 103. DOI: 10.1063/1.4828497  0.496
2013 Cho CY, Zhang Y, Cicek E, Rahnema B, Bai Y, McClintock R, Razeghi M. Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) Applied Physics Letters. 102. DOI: 10.1063/1.4809521  0.69
2013 Cicek E, McClintock R, Vashaei Z, Zhang Y, Gautier S, Cho CY, Razeghi M. Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4790839  0.417
2013 Zhang Y, Gautier S, Cho CY, Cicek E, Vashaei Z, McClintock R, Bayram C, Bai Y, Razeghi M. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111) Applied Physics Letters. 102. DOI: 10.1063/1.4773565  0.784
2013 Razeghi M, Haddadi A, Hoang AM, Huang EK, Chen G, Bogdanov S, Darvish SR, Callewaert F, McClintock R. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices Infrared Physics and Technology. 59: 41-52. DOI: 10.1016/J.Infrared.2012.12.008  0.804
2012 Cicek E, Vashaei Z, Huang EK, McClintock R, Razeghi M. Al(x)Ga(1-x)N-based deep-ultraviolet 320×256 focal plane array. Optics Letters. 37: 896-8. PMID 22378430 DOI: 10.1364/Ol.37.000896  0.756
2012 Cicek E, Vashaei Z, Huang EKW, McClintock R, Razeghi M. AlxGa1?xN-based deep-ultraviolet 320×256 focal plane array Optics Letters. 37: 896-898. DOI: 10.1364/OL.37.000896  0.546
2012 Rogers DJ, Teherani FH, Bove P, McClintock R, Razeghi M. Improved LEDs and photovoltaics by hybridization & and nanostructuring Spie Newsroom. DOI: 10.1117/2.1201206.004238  0.458
2012 Rogers DJ, Carroll C, Bove P, Sandana VE, Goubert L, Largeteau A, Teherani FH, Demazeau G, McClintock R, Drouhin HJ, Razeghi M. Energy harvesting from millimetric ZnO single wire piezo-generators Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.927621  0.404
2012 Ulmer MP, Cicek E, McClintock R, Vashaei Z, Razeghi M. Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 8453. DOI: 10.1117/12.924173  0.355
2012 Rogers DJ, Ougazzaden A, Sandana VE, Moudakir T, Ahaitouf A, Teherani FH, Gautier S, Goubert L, Davidson IA, Prior KA, McClintock RP, Bove P, Drouhin HJ, Razeghi M. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.916013  0.439
2012 McClintock R, Haddadi A, Razeghi M. Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.913980  0.381
2011 Huang EK, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. Optics Letters. 36: 2560-2. PMID 21725479 DOI: 10.1364/Ol.36.002560  0.777
2011 Huang EKW, Haddadi A, Chen G, Nguyen BM, Hoang MA, McClintock R, Stegall M, Razeghi M. Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance Optics Letters. 36: 2560-2562. DOI: 10.1364/OL.36.002560  0.628
2011 Cicek E, Vashaei Z, McClintock R, Razeghi M. Deep ultraviolet (254 nm) focal plane array Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.904984  0.606
2011 Ulmer MP, McClintock R, Razeghi M. Advances in UV sensitive visible blind GaN-based APDs Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.879942  0.503
2011 Rogers DJ, Sandana VE, Teherani FH, McClintock R, Razeghi M, Drouhin HJ. Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.879928  0.459
2011 Vashaei Z, Bayram C, McClintock R, Razeghi M. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes Proceedings of Spie - the International Society For Optical Engineering. 7945. DOI: 10.1117/12.879858  0.67
2010 McClintock R, Cicek E, Vashaei Z, Bayram C, Razeghi M, Ulmer MP. III-Nitride based avalanche photo detectors Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863962  0.676
2010 Cicek E, Vashaei Z, Bayram C, McClintock R, Razeghi M, Ulmer MP. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.863905  0.706
2010 Cicek E, Vashaei Z, McClintock R, Bayram C, Razeghi M. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3457783  0.714
2010 Vashaei Z, Cicek E, Bayram C, McClintock R, Razeghi M. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate Applied Physics Letters. 96. DOI: 10.1063/1.3432408  0.653
2010 Pau JL, Piqueras J, Rogers DJ, Teherani FH, Minder K, McClintock R, Razeghi M. On the interface properties of ZnO/Si electroluminescent diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3305530  0.81
2009 Pau JL, Bayram C, Giedraitis P, McClintock R, Razeghi M. GaN-based nanostructured photodetectors Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.814983  0.631
2009 McClintock R, Pau JL, Bayram C, Fain B, Giedraitis P, Razeghi M, Ulmer MP. III-Nitride avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.809704  0.636
2009 Sandana VE, Rogers DJ, Hosseini Teherani F, McClintock R, Bayram C, Razeghi M, Drouhin HJ, Clochard MC, Sallet V, Garry G, Falyouni F. Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1678-1683. DOI: 10.1116/1.3137990  0.635
2009 Teherani FH, Razeghi M, Rogers DJ, Bayram C, Mcclintock R. Hybrid green LEDs with n-type ZnO substituted for N-type GaN in an inverted P-N junction Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 401. DOI: 10.1109/LEOS.2009.5343231  0.708
2009 Ṕŕ-Laperne N, Bayram C, Nguyen-Tĥ L, McClintock R, Razeghi M. Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 95. DOI: 10.1063/1.3242027  0.656
2009 Bayram C, Ṕŕ-Laperne N, McClintock R, Fain B, Razeghi M. Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions Applied Physics Letters. 94. DOI: 10.1063/1.3104857  0.651
2009 Razeghi M, McClintock R. A review of III-nitride research at the Center for Quantum Devices Journal of Crystal Growth. 311: 3067-3074. DOI: 10.1016/J.Jcrysgro.2009.01.097  0.499
2009 Bayram C, Pau JL, McClintock R, Razeghi M. Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN Applied Physics B: Lasers and Optics. 95: 307-314. DOI: 10.1007/S00340-008-3321-Y  0.728
2008 McClintock R, Pau JL, Minder K, Bayram C, Razeghi M. III-Nitride photon counting avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 6900. DOI: 10.1117/12.776265  0.631
2008 Pau JL, McClintock R, Bayram C, Minder K, Silversmith D, Razeghi M. High optical response in forward biased (In,Ga)N-GaN multiquantum-well diodes under barrier illumination Ieee Journal of Quantum Electronics. 44: 346-353. DOI: 10.1109/Jqe.2007.914766  0.802
2008 Pau JL, Bayram C, Giedraitis P, McClintock R, Razeghi M. GaN nanostructured p-i-n photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3041641  0.742
2008 Bayram C, Pau JL, McClintock R, Razeghi M, Ulmer MP, Silversmith D. High quantum efficiency back-illuminated GaN avalanche photodiodes Applied Physics Letters. 93. DOI: 10.1063/1.3039061  0.737
2008 Bayram C, Pau JL, McClintock R, Razeghi M. Delta-doping optimization for high quality p -type GaN Journal of Applied Physics. 104. DOI: 10.1063/1.3000564  0.658
2008 Bayram C, Pau JL, McClintock R, Razeghi M. Performance enhancement of GaN ultraviolet avalanche photodiodes with p -type δ -doping Applied Physics Letters. 92. DOI: 10.1063/1.2948857  0.69
2008 Pau JL, Bayram C, McClintock R, Razeghi M, Silversmith D. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes Applied Physics Letters. 92. DOI: 10.1063/1.2897039  0.667
2007 Ulmer MP, McClintock RM, Pau JL, Razeghi M. Advances in APDs for UV astronomy Proceedings of Spie - the International Society For Optical Engineering. 6686. DOI: 10.1117/12.739919  0.472
2007 Minder K, Teherani FH, Rogers D, Bayram C, McClintock R, Kung P, Razeghi M. Etching of ZnO towards the Development of ZnO Homostructure LEDs Proceedings of Spie - the International Society For Optical Engineering. 6474. DOI: 10.1117/12.712784  0.633
2007 Minder K, Pau JL, McClintock R, Kung P, Bayram C, Razeghi M, Silversmith D. Scaling in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2772199  0.799
2007 Pau JL, McClintock R, Minder K, Bayram C, Kung P, Razeghi M, Muñoz E, Silversmith D. Geiger-mode operation of back-illuminated GaN avalanche photodiodes Applied Physics Letters. 91. DOI: 10.1063/1.2759980  0.803
2007 McClintock R, Pau JL, Minder K, Bayram C, Kung P, Razeghi M. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes Applied Physics Letters. 90. DOI: 10.1063/1.2720712  0.785
2006 Razeghi M, Wei Y, Hood A, Hoffman D, Nguyen BM, Delaunay PY, Michel E, McClintock R. Type II superlattice photodetectors for MWIR to VLWIR focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6206. DOI: 10.1117/12.661170  0.63
2006 McClintock R, Minder K, Yasan A, Bayram C, Fuchs F, Kung P. Solar-blind avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 6127. DOI: 10.1117/12.660147  0.804
2006 Razeghi M, Yasan A, McClintock R, Mayes K, Kung P. Short-wavelength ultraviolet light-emitting diodes based on AlGaN Optics Infobase Conference Papers.  0.329
2006 Razeghi M, Yasan A, McClintock R, Mayes K, Kung P. Short-wavelength ultraviolet light-emitting diodes based on AlGaN Optics Infobase Conference Papers.  0.731
2006 Razeghi M, Yasan A, McClintock R, Mayes K, Kung P. Short-wavelength ultraviolet light-emitting diodes based on AlGaN Optics Infobase Conference Papers.  0.731
2006 Razeghi M, Yajun W, Delaunay P, McClintock R, Nguyen BM, Michel E, Hood A, Hoffman D, Kan M, Tidrow MZ. First demonstration of 10 microns FPAs in InAs/GaSb superlattices (invited) Leos Summer Topical Meeting. 23-24.  0.624
2005 Yasan A, McClintock R, Mayes K, Kung P, Razeghi M. AlGaN-based deep UV light emitting diodes with peak emission below 255 nm Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5732: 197-204. DOI: 10.1117/12.597078  0.755
2005 McClintock R, Yasan A, Mayes K, Kung P, Razeghi M. Back-illuminated solar-blind photodetectors for imaging applications Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5732: 175-184. DOI: 10.1117/12.597077  0.754
2005 Rogers DJ, Téherani FH, Yasan A, McClintock R, Mayes K, Darvish SR, Kung P, Razeghi M, Garry G. ZnO thin film templates for GaN-based devices Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5732: 412-416. DOI: 10.1117/12.596912  0.735
2005 McClintock R, Yasan A, Minder K, Kung P, Razeghi M. Avalanche multiplication in AlGaN based solar-blind photodetectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2140610  0.797
2005 McClintock R, Mayes K, Yasan A, Shiell D, Kung P, Razeghi M. 320×256 solar-blind focal plane arrays based on AlxGa1-xN Applied Physics Letters. 86: 011117-1-011117-3. DOI: 10.1063/1.1846936  0.79
2005 McClintock R, Razeghi M. III-nitride UV Photoconductors Optoelectronic Devices: Iii Nitrides. 251-284. DOI: 10.1016/B978-008044426-0/50010-9  0.423
2004 McClintock R, Yasan A, Mayes K, Shiell D, Darvish SR, Kung P, Razeghi M. High quantum efficiency solar-blind photodetectors Proceedings of Spie - the International Society For Optical Engineering. 5359: 434-444. DOI: 10.1117/12.529348  0.753
2004 Yasan A, McClintock R, Mayes K, Shiell D, Darvish SR, Kung P, Razeghi M. Growth of deep UV light emitting diodes by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 5359: 400-414. DOI: 10.1117/12.529343  0.756
2004 McClintock R, Yasan A, Mayes K, Shiell D, Darvish SR, Kung P, Razeghi M. High quantum efficiency AlGaN solar-blind p-i-n photodiodes Applied Physics Letters. 84: 1248-1250. DOI: 10.1063/1.1650550  0.809
2004 Mayes K, Yasan A, McClintock R, Shiell D, Darvish SR, Kung P, Razeghi M. High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well Applied Physics Letters. 84: 1046-1048. DOI: 10.1063/1.1647273  0.822
2004 Razeghi M, Yasan A, McClintock R, Mayes K, Shiell D, Darvish SR, Kung P. Review of III-nitride optoelectronic materials for light emission and detection Physica Status Solidi (C). 1: S141-S148. DOI: 10.1002/Pssc.200405133  0.846
2003 Razeghi M, Yasan A, McClintock R, Mayes K, Darvish SR, Kung P. High power deep UV AlGaN light-emitting diodes Frontiers in Optics. DOI: 10.1364/Fio.2003.Pdp9  0.793
2003 Jiang J, Mi K, McClintock R, Razeghi M, Brown GJ, Jelen C. Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP Ieee Photonics Technology Letters. 15: 1273-1275. DOI: 10.1109/Lpt.2003.816667  0.622
2003 Yasan A, McClintock R, Mayes K, Shiell D, Gautero L, Darvish SR, Kung P, Razegh M. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes Applied Physics Letters. 83: 4701-4703. DOI: 10.1063/1.1633019  0.803
2003 Yasan A, McClintock R, Mayes K, Kim DH, Kung P, Razeghi M. Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes Applied Physics Letters. 83: 4083-4085. DOI: 10.1063/1.1626808  0.779
2002 Kung P, Yasan A, McClintock R, Darvish S, Mi K, Razeghi M. Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 4650: 199-206. DOI: 10.1117/12.467650  0.752
2002 Yasan A, McClintock R, Mayes K, Darvish SR, Zhang H, Kung P, Razeghi M, Lee SK, Han JY. Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire Applied Physics Letters. 81: 2151-2153. DOI: 10.1063/1.1508414  0.82
2002 Yasan A, McClintock R, Mayes K, Darvish SR, Kung P, Razeghi M. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm Applied Physics Letters. 81: 801-802. DOI: 10.1063/1.1497709  0.805
2002 Yasan A, McClintock R, Darvish SR, Lin Z, Mi K, Kung P, Razeghi M. Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices Applied Physics Letters. 80: 2108-2110. DOI: 10.1063/1.1463708  0.79
2002 Yasan A, McClintock R, Mayes K, Darvish SR, Kung P, Razeghi M, Molnar RJ. 280 nm UV LEDs grown on HVPE GaN substrates Opto-Electronics Review. 10: 287-289.  0.742
2001 McClintock R, Sandvik P, Mi K, Shahedipour F, Yasan A, Jelen C, Kung P, Razeghi M. AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications Proceedings of Spie - the International Society For Optical Engineering. 4288: 219-229. DOI: 10.1117/12.429409  0.782
2001 Sandvik P, Mi K, Shahedipour F, McClintock R, Yasan A, Kung P, Razeghi M. AlxGa1-xN for solar-blind UV detectors Journal of Crystal Growth. 231: 366-370. DOI: 10.1016/S0022-0248(01)01467-1  0.828
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