Jung-Hoon Rhew, Ph.D. - Publications
Affiliations: | 2003 | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2006 | Mudanai S, Shih WK, Rios R, Xi X, Rhew JH, Kuhn K, Packan P. Analytical modeling of output conductance in long-channel halo-doped MOSFETs Ieee Transactions On Electron Devices. 53: 2091-2096. DOI: 10.1109/TED.2006.880371 | 0.303 | |||
2002 | Rhew JH, Lundstrom MS. Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 92: 5196-5202. DOI: 10.1063/1.1509098 | 0.718 | |||
2002 | Rhew J, Ren Z, Lundstrom MS. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388. DOI: 10.1023/A:1020712010848 | 0.741 | |||
2002 | Rhew JH, Ren Z, Lundstrom MS. A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906. DOI: 10.1016/S0038-1101(02)00130-2 | 0.726 | |||
2002 | Lundstrom M, Rhew JH. The landauer approach to the critical source-channel barrier in MOSFETs 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 486-489. | 0.359 | |||
2001 | Banoo K, Rhew J, Lundstrom M, Shu C, Jerome JW. Simulating Quasi-ballistic Transport in Si Nanotransistors Vlsi Design. 13: 5-13. DOI: 10.1155/2001/16023 | 0.623 | |||
2001 | Rahman A, Ren Z, Rhew JH, Lundstrom MS. Towards a compact scattering model for nanoscale MOSFETs 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 554-557. | 0.529 | |||
2001 | Banoo K, Rhew JH, Lundstrom M, Shu CW, Jerome JW. Simulating quasi-ballistic transport in Si nanotransistors Vlsi Design. 13: 5-13. | 0.688 | |||
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