Jung-Hoon Rhew, Ph.D. - Publications

2003 Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering

8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Mudanai S, Shih WK, Rios R, Xi X, Rhew JH, Kuhn K, Packan P. Analytical modeling of output conductance in long-channel halo-doped MOSFETs Ieee Transactions On Electron Devices. 53: 2091-2096. DOI: 10.1109/TED.2006.880371  0.303
2002 Rhew JH, Lundstrom MS. Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors Journal of Applied Physics. 92: 5196-5202. DOI: 10.1063/1.1509098  0.718
2002 Rhew J, Ren Z, Lundstrom MS. Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Journal of Computational Electronics. 1: 385-388. DOI: 10.1023/A:1020712010848  0.741
2002 Rhew JH, Ren Z, Lundstrom MS. A numerical study of ballistic transport in a nanoscale MOSFET Solid-State Electronics. 46: 1899-1906. DOI: 10.1016/S0038-1101(02)00130-2  0.726
2002 Lundstrom M, Rhew JH. The landauer approach to the critical source-channel barrier in MOSFETs 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 486-489.  0.359
2001 Banoo K, Rhew J, Lundstrom M, Shu C, Jerome JW. Simulating Quasi-ballistic Transport in Si Nanotransistors Vlsi Design. 13: 5-13. DOI: 10.1155/2001/16023  0.623
2001 Rahman A, Ren Z, Rhew JH, Lundstrom MS. Towards a compact scattering model for nanoscale MOSFETs 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 554-557.  0.529
2001 Banoo K, Rhew JH, Lundstrom M, Shu CW, Jerome JW. Simulating quasi-ballistic transport in Si nanotransistors Vlsi Design. 13: 5-13.  0.688
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