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Siyuranga O. Koswatta, Ph.D. - Publications

Affiliations: 
2008 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, Han SJ, Tulevski GS, Miyazoe H, Haensch W, Tersoff J. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 13: 2490-5. PMID 23638708 DOI: 10.1021/Nl400544Q  0.491
2012 Franklin AD, Koswatta SO, Farmer D, Tulevski GS, Smith JT, Miyazoe H, Haensch W. Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around Technical Digest - International Electron Devices Meeting, Iedm. 4.5.1-4.5.4. DOI: 10.1109/IEDM.2012.6478979  0.364
2011 Koswatta SO, Valdes-Garcia A, Steiner MB, Lin YM, Avouris P. Ultimate RF performance potential of carbon electronics Ieee Transactions On Microwave Theory and Techniques. 59: 2739-2750. DOI: 10.1109/Tmtt.2011.2150241  0.511
2010 Koswatta SO, Koester SJ, Haensch W. On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors Ieee Transactions On Electron Devices. 57: 3222-3230. DOI: 10.1109/Ted.2010.2079250  0.444
2010 Zhang Q, Lu Y, Xing GH, Richter CA, Koeste SJ, Koswatta SO. Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: Challenges and opportunities Device Research Conference - Conference Digest, Drc. 75-76. DOI: 10.1109/DRC.2010.5551933  0.379
2010 Lu Y, Seabaugh A, Fay P, Koester SJ, Laux SE, Haensch TW, Koswatta SO. Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement Device Research Conference - Conference Digest, Drc. 17-18. DOI: 10.1109/DRC.2010.5551905  0.342
2009 Koswatta SO, Lundstrom MS, Nikonov DE. Performance comparison between p-i-n tunneling transistors and conventional MOSFETs Ieee Transactions On Electron Devices. 56: 456-465. DOI: 10.1109/Ted.2008.2011934  0.62
2009 Koswatta SO, Koester SJ, Haensch W. 1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2009.5424279  0.43
2008 Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Computational study of exciton generation in suspended carbon nanotube transistors. Nano Letters. 8: 1596-601. PMID 18457455 DOI: 10.1021/Nl0801226  0.649
2008 Koswatta SO, Lundstrom MS, Nikonov DE. Influence of phonon scattering on the performance of p-i-n band-to-band tunneling transistors Applied Physics Letters. 92. DOI: 10.1063/1.2839375  0.691
2007 Koswatta SO, Lundstrom MS, Nikonov DE. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling. Nano Letters. 7: 1160-4. PMID 17388638 DOI: 10.1021/Nl062843F  0.693
2007 Koswatta SO, Hasan S, Lundstrom MS, Anantram MP, Nikonov DE. Nonequilibrium Green's function treatment of phonon scattering in carbon-nanotube transistors Ieee Transactions On Electron Devices. 54: 2339-2351. DOI: 10.1109/Ted.2007.902900  0.696
2007 Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Exciton generation in suspended carbon nanotube FETs: A computational study Technical Digest - International Electron Devices Meeting, Iedm. 745-748. DOI: 10.1109/IEDM.2007.4419054  0.652
2006 Guo J, Koswatta SO, Neophytou N, Lundstrom M. Carbon nanotube field-effect transistors International Journal of High Speed Electronics and Systems. 16: 897-912. DOI: 10.1142/S0129156406004077  0.638
2006 Koswatta SO, Neophytou N, Kienle D, Fiori G, Lundstrom MS. Dependence of DC characteristics of CNT MOSFETs on bandstructure models Ieee Transactions On Nanotechnology. 5: 368-372. DOI: 10.1109/Tnano.2006.876916  0.661
2006 Koswatta SO, Hasan S, Lundstrom MS, Anantram MP, Nikonov DE. Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias Applied Physics Letters. 89. DOI: 10.1063/1.2218322  0.691
2005 Koswatta SO, Lundstrom MS, Anantram MP, Nikonov DE. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146065  0.696
2005 Koswatta SO, Nikonov DE, Lundstrom MS. Computational study of carbon nanotube p-i-n tunnel FETs Technical Digest - International Electron Devices Meeting, Iedm. 2005: 518-521.  0.635
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