Himadri S. Pal, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Pal HS, Nikonov DE, Kim R, Lundstrom MS. Electron-phonon scattering in planar MOSFETs with NEGF 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562595  0.411
2010 Liu Y, Pal HS, Lundstrom MS, Kim DH, Alamo JAD, Antoniadis DA. Device physics and performance potential of III-V field-effect transistors Fundamentals of Iii-V Semiconductor Mosfets. 31-49. DOI: 10.1007/978-1-4419-1547-4_3  0.515
2008 Pal HS, Cantley KD, Ahmed SS, Lundstrom MS. Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs Ieee Transactions On Electron Devices. 55: 904-908. DOI: 10.1109/Ted.2007.914830  0.522
2008 Pal HS, Low T, Lundstrom MS. NEGF analysis of InGaAs schottky barrier double gate MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796843  0.566
2008 Yang T, Liu Y, Ye PD, Xuan Y, Pal H, Lundstrom MS. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92. DOI: 10.1063/1.2953080  0.563
2007 Lundstrom MS, Cantley KD, Pal HS. Nanoscale transistors: Physics and materials Materials Research Society Symposium Proceedings. 958: 185-195. DOI: 10.1557/Proc-0958-L06-06  0.606
2007 Cantley KD, Liu Y, Pal HS, Low T, Ahmed SS, Lundstrom MS. Performance analysis of III-V materials in a double-gate nano-MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 113-116. DOI: 10.1109/IEDM.2007.4418877  0.606
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