Himadri S. Pal, Ph.D. - Publications
Affiliations: | 2010 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical Engineering, NanotechnologyYear | Citation | Score | |||
---|---|---|---|---|---|
2010 | Pal HS, Nikonov DE, Kim R, Lundstrom MS. Electron-phonon scattering in planar MOSFETs with NEGF 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562595 | 0.411 | |||
2010 | Liu Y, Pal HS, Lundstrom MS, Kim DH, Alamo JAD, Antoniadis DA. Device physics and performance potential of III-V field-effect transistors Fundamentals of Iii-V Semiconductor Mosfets. 31-49. DOI: 10.1007/978-1-4419-1547-4_3 | 0.515 | |||
2008 | Pal HS, Cantley KD, Ahmed SS, Lundstrom MS. Influence of bandstructure and channel structure on the inversion layer capacitance of silicon and GaAs MOSFETs Ieee Transactions On Electron Devices. 55: 904-908. DOI: 10.1109/Ted.2007.914830 | 0.522 | |||
2008 | Pal HS, Low T, Lundstrom MS. NEGF analysis of InGaAs schottky barrier double gate MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796843 | 0.566 | |||
2008 | Yang T, Liu Y, Ye PD, Xuan Y, Pal H, Lundstrom MS. Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate Applied Physics Letters. 92. DOI: 10.1063/1.2953080 | 0.563 | |||
2007 | Lundstrom MS, Cantley KD, Pal HS. Nanoscale transistors: Physics and materials Materials Research Society Symposium Proceedings. 958: 185-195. DOI: 10.1557/Proc-0958-L06-06 | 0.606 | |||
2007 | Cantley KD, Liu Y, Pal HS, Low T, Ahmed SS, Lundstrom MS. Performance analysis of III-V materials in a double-gate nano-MOSFET Technical Digest - International Electron Devices Meeting, Iedm. 113-116. DOI: 10.1109/IEDM.2007.4418877 | 0.605 | |||
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