| Year |
Citation |
Score |
| 2016 |
Shirazi-HD M, Turkmeneli K, Liu S, Dai S, Edmunds C, Shao J, Gardner G, Zakharov DN, Manfra MJ, Malis O. Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices Applied Physics Letters. 108. DOI: 10.1063/1.4944847 |
0.711 |
|
| 2015 |
Grier A, Valavanis A, Edmunds C, Shao J, Cooper JD, Gardner G, Manfra MJ, Malis O, Indjin D, Ikonić Z, Harrison P. Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices Journal of Applied Physics. 118. DOI: 10.1063/1.4936962 |
0.666 |
|
| 2014 |
Malis O, Edmunds C, Li D, Shao J, Gardner G, Li W, Fay P, Manfra MJ. Quantum band engineering of nitride semiconductors for infrared lasers Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036286 |
0.673 |
|
| 2014 |
Edmunds C, Shao J, Shirazi-Hd M, Manfra MJ, Malis O. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4890611 |
0.683 |
|
| 2013 |
Edmunds C, Tang L, Cervantes M, Shirazi-Hd M, Shao J, Grier A, Valavanis A, Cooper JD, Li D, Gardner G, Zakharov DN, Ikonić Z, Indjin D, Harrison P, Manfra MJ, et al. Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.235306 |
0.716 |
|
| 2013 |
Li D, Shao J, Tang L, Edmunds C, Gardner G, Manfra MJ, Malis O. Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074024 |
0.681 |
|
| 2013 |
Shao J, Zakharov DN, Edmunds C, Malis O, Manfra MJ. Homogeneous AlGaN/GaN superlattices grown on free-standing (1 1 ̄00) GaN substrates by plasma-assisted molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4836975 |
0.661 |
|
| 2013 |
Shao J, Tang L, Edmunds C, Gardner G, Malis O, Manfra M. Surface morphology evolution of m-plane (11̄00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature Journal of Applied Physics. 114. DOI: 10.1063/1.4813079 |
0.661 |
|
| 2012 |
Edmunds C, Tang L, Shao J, Li D, Cervantes M, Gardner G, Zakharov DN, Manfra MJ, Malis O. Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location Applied Physics Letters. 101. DOI: 10.1063/1.4751040 |
0.726 |
|
| 2012 |
Li D, Tang L, Edmunds C, Shao J, Gardner G, Manfra MJ, Malis O. Repeatable low-temperature negative-differential resistance from Al 0.18Ga 0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates Applied Physics Letters. 100. DOI: 10.1063/1.4729819 |
0.707 |
|
| 2012 |
Edmunds C, Tang L, Li D, Cervantes M, Gardner G, Paskova T, Manfra MJ, Malis O. Near-infrared absorption in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates Journal of Electronic Materials. 41: 881-886. DOI: 10.1007/S11664-011-1881-9 |
0.732 |
|
| 2010 |
Malis O, Edmunds C, Li D, Manfra MJ. Intersubband transitions in lattice-matched AlInN/GaN heterostructures Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508938 |
0.703 |
|
| 2009 |
Malis O, Edmunds C, Manfra MJ, Sivco DL. Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices Applied Physics Letters. 94. DOI: 10.1063/1.3120551 |
0.733 |
|
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