Sunkook Kim, Ph.D. - Publications

2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Electronics and Electrical Engineering

31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Hong S, Choi SH, Park J, Yoo H, Oh JY, Hwang E, Yoon DH, Kim S. Sensory Adaptation and Neuromorphic Phototransistors Based on CsPb(Br1-xIx)3 Perovskite and MoS2 Hybrid Structure. Acs Nano. PMID 32628447 DOI: 10.1021/acsnano.0c01689  0.32
2019 Hong S, Lee JJ, Gandla S, Park J, Cho H, Kim S. Resistive Water Sensors Based on PEDOT: PSS-g-PEGME copolymer and Laser Treatment for Water Ingress Monitoring Systems. Acs Sensors. PMID 31789504 DOI: 10.1021/acssensors.9b01917  0.32
2017 Liu N, Baek J, Kim SM, Hong S, Hong YK, Kim YS, Kim HS, Kim S, Park J. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors. Acs Applied Materials & Interfaces. PMID 29160684 DOI: 10.1021/acsami.7b16670  0.32
2016 Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song WG, Omkaram I, Alam MA, Kim S. Transistors: High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates (Adv. Mater. 12/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 2278. PMID 27001696 DOI: 10.1002/adma.201670078  0.32
2016 Rhyee JS, Kwon J, Dak P, Kim JH, Kim SM, Park J, Hong YK, Song W, Omkaram I, Alam MA, Kim S. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates. Advanced Materials (Deerfield Beach, Fla.). PMID 26755196 DOI: 10.1002/adma.201504789  0.32
2015 Kwon J, Hong YK, Han G, Omkaram I, Choi W, Kim S, Yoon Y. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. Advanced Materials (Deerfield Beach, Fla.). 27: 2224-30. PMID 25676825 DOI: 10.1002/adma.201404367  0.64
2015 Kwon J, Hong YK, Kwon HJ, Park YJ, Yoo B, Kim J, Grigoropoulos CP, Oh MS, Kim S. Optically transparent thin-film transistors based on 2D multilayer MoS₂ and indium zinc oxide electrodes. Nanotechnology. 26: 035202. PMID 25548952 DOI: 10.1088/0957-4484/26/3/035202  0.64
2015 Yoo G, Lee S, Yoo B, Han C, Kim S, Oh MS. Electrical Contact Analysis of Multilayer MoS2 Transistor with Molybdenum Source/Drain Electrodes Ieee Electron Device Letters. 36: 1215-1218. DOI: 10.1109/LED.2015.2478899  0.64
2015 Kwon J, Hong S, Hong YK, Lee S, Yoo G, Yoon Y, Kim S. Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap Applied Physics Letters. 107. DOI: 10.1063/1.4935979  0.64
2015 Kwon HJ, Kim S, Jang J, Grigoropoulos CP. Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Applied Physics Letters. 106. DOI: 10.1063/1.4916131  0.64
2014 Lee J, Dak P, Lee Y, Park H, Choi W, Alam MA, Kim S. Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomolecules. Scientific Reports. 4: 7352. PMID 25516382 DOI: 10.1038/srep07352  0.64
2014 Kwon HJ, Jang J, Kang H, Kim S, Subramanian V, Grigoropoulos CP. Electrical characteristics of multilayer MoS2 transistors at real operating temperatures and different ambient conditions Ecs Transactions. 64: 127-133. DOI: 10.1149/06408.0127ecst  0.64
2014 Kwon J, Omkaram I, Song W, Kim M, Ki HY, Choi W, Kim S. Electrical performance of local bottom-gated MoS2 thin-film transistors Journal of Information Display. 15: 107-110. DOI: 10.1080/15980316.2014.917340  0.64
2014 Kwon HJ, Jang J, Kim S, Subramanian V, Grigoropoulos CP. Electrical characteristics of multilayer MoS2 transistors at real operating temperatures with different ambient conditions Applied Physics Letters. 105. DOI: 10.1063/1.4898584  0.64
2014 Kwon HJ, Kang H, Jang J, Kim S, Grigoropoulos CP. Analysis of flicker noise in two-dimensional multilayer MoS2 transistors Applied Physics Letters. 104. DOI: 10.1063/1.4866785  0.64
2014 Chung JW, Ko YH, Hong YK, Song W, Jung C, Tang H, Lee J, Lee MH, Lee BL, Park JI, Jin Y, Lee S, Yu JS, Park J, Kim S. Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2thin film transistor Organic Electronics: Physics, Materials, Applications. 15: 3038-3042. DOI: 10.1016/j.orgel.2014.08.003  0.64
2012 Tayebi N, Kim S, Chen RJ, Tran Q, Franklin N, Nishi Y, Ma Q, Rao V. Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains. Nano Letters. 12: 5455-63. PMID 23043427 DOI: 10.1021/nl302911k  0.64
2012 Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/ncomms2018  0.64
2012 Kim ES, Kim S, Lee YS, Lee SY, Lee S, Choi W, Peelaers H, Van De Walle CG, Hwang WS, Kosel T, Jena D. Multilayer transition-metal dichalcogenide channel Thin-Film Transistors Technical Digest - International Electron Devices Meeting, Iedm. 5.5.1-5.5.4. DOI: 10.1109/IEDM.2012.6478985  0.64
2011 Kim S, Kwon HJ, Lee S, Shim H, Chun Y, Choi W, Kwack J, Han D, Song M, Kim S, Mohammadi S, Kee I, Lee SY. Low-power flexible organic light-emitting diode display device. Advanced Materials (Deerfield Beach, Fla.). 23: 3511-6. PMID 21735486 DOI: 10.1002/adma.201101066  0.64
2011 Choi W, Kim S, Jin YW, Lee SY, Sands TD. Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3561751  0.64
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/jp203342j  0.32
2010 Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203  0.64
2010 Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/nn1006094  0.64
2010 Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes Ieee Transactions On Components and Packaging Technologies. 33: 178-183. DOI: 10.1109/TCAPT.2009.2038488  0.64
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/adma.200801032  0.64
2009 Back JH, Tsai CL, Kim S, Mohammadi S, Shim M. Manifestation of Kohn anomaly in 1/f fluctuations in metallic carbon nanotubes. Physical Review Letters. 103: 215501. PMID 20366051 DOI: 10.1103/PhysRevLett.103.215501  0.64
2008 Back JH, Kim S, Mohammadi S, Shim M. Low-frequency noise in ambipolar carbon nanotube transistors. Nano Letters. 8: 1090-4. PMID 18351749 DOI: 10.1021/nl073140g  0.64
2008 Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005  0.64
2007 Kim SK, Xuan Y, Ye PD, Mohammadi S, Back JH, Shim M. Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors Applied Physics Letters. 90. DOI: 10.1063/1.2724904  0.64
2005 Kim S, Choi TY, Rabieirad L, Jeon JH, Shim M, Mohammadi S. A poly-Si gate carbon nanotube field effect transistor for high frequency applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 303-306. DOI: 10.1109/MWSYM.2005.1516586  0.64
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