Michael W. Dashiell, Ph.D. - Publications

Affiliations: 
2000 University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering

14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  0.52
2002 Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/LED.2002.1004234  0.36
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326.  0.52
2002 Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264.  0.32
2002 Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206.  0.76
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  0.36
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731.  0.44
1999 Kulik LV, Guedj C, Dashiell MW, Kolodzey J, Hairie A. Phonon spectra of substitutional carbon in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 59: 15753-15759.  0.44
1998 Kulik LV, Hits DA, Dashiell MW, Kolodzey J. The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures Applied Physics Letters. 72: 1972-1974. DOI: 10.1063/1.121238  0.68
1998 Guedj C, Dashiell MW, Kulik L, Kolodzey J, Hairie A. Precipitation of β-SiC in Si1-yCY alloys Journal of Applied Physics. 84: 4631-4633.  0.56
1998 Junge KE, Lange R, Dolan JM, Zollner S, Humlicek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry studies, optical properties, and band structure of Ge1-yCy, Ge-rich Si1-x-yGexCy, and boron-doped Si1-xGex alloys Materials Research Society Symposium - Proceedings. 533: 125-129.  0.72
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50.  0.48
1997 Orner BA, Chen F, Hits D, Dashiell MW, Kolodzey J. Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates Proceedings of Spie - the International Society For Optical Engineering. 3007: 152-161.  0.48
1997 Shao X, Rommel SL, Orner BA, Feng H, Kolodzey J, Berger PR, Dashiell MW. Ge1-xCx/Si heterojunction photodiode Proceedings of Spie - the International Society For Optical Engineering. 3007: 162-169.  0.4
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