Michael W. Dashiell, Ph.D. - Publications

Affiliations: 
2000 University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering

14/36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741  0.52
2002 Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/LED.2002.1004234  0.36
2002 Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326.  0.52
2002 Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264.  0.32
2002 Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206.  0.76
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  0.36
2000 Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731.  0.44
1999 Kulik LV, Guedj C, Dashiell MW, Kolodzey J, Hairie A. Phonon spectra of substitutional carbon in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 59: 15753-15759.  0.44
1998 Kulik LV, Hits DA, Dashiell MW, Kolodzey J. The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures Applied Physics Letters. 72: 1972-1974. DOI: 10.1063/1.121238  0.68
1998 Guedj C, Dashiell MW, Kulik L, Kolodzey J, Hairie A. Precipitation of β-SiC in Si1-yCY alloys Journal of Applied Physics. 84: 4631-4633.  0.56
1998 Junge KE, Lange R, Dolan JM, Zollner S, Humlicek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry studies, optical properties, and band structure of Ge1-yCy, Ge-rich Si1-x-yGexCy, and boron-doped Si1-xGex alloys Materials Research Society Symposium - Proceedings. 533: 125-129.  0.72
1998 Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50.  0.48
1997 Orner BA, Chen F, Hits D, Dashiell MW, Kolodzey J. Optical constants of B- and P-doped Ge1-yCy alloys on Si substrates Proceedings of Spie - the International Society For Optical Engineering. 3007: 152-161.  0.48
1997 Shao X, Rommel SL, Orner BA, Feng H, Kolodzey J, Berger PR, Dashiell MW. Ge1-xCx/Si heterojunction photodiode Proceedings of Spie - the International Society For Optical Engineering. 3007: 162-169.  0.4
Low-probability matches
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J. MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures Proceedings of Spie - the International Society For Optical Engineering. 3278: 270-277. DOI: 10.1117/12.298210  0.28
1998 Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207  0.24
1998 Dashiell MW, Kulik LV, Hits D, Kolodzey J, Watson G. Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source Applied Physics Letters. 72: 833-835. DOI: 10.1063/1.120908  0.16
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2826-2834. DOI: 10.1116/1.1319691  0.12
1999 Duschl R, Schmidt OG, Winter W, Eberl K, Dashiell MW, Kolodzey J, Jin-Phillipp NY, Phillipp F. Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001) Applied Physics Letters. 74: 1150-1152. DOI: 10.1063/1.123470  0.12
2004 Khorenko E, Prost W, Tegude FJ, Stoffel M, Duschl R, Dashiell MW, Schmidt OG. Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes Journal of Applied Physics. 96: 3848-3851. DOI: 10.1063/1.1787137  0.08
2004 Khorenko E, Prost W, Tegude FJ, Stoffel M, Duschl R, Dashiell MW, Schmidt OG, Klimeck G. Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes Asdam 2004 - Conference Proceedings, 5th International Conference On Semiconductor Devices and Microsystmes. 29-32.  0.08
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  0.04
2008 Dashiell MW, Ehsani H, Sander PC, Newman FD, Wang CA, Shellenbarger ZA, Donetski D, Gu N, Anikeev S. Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (1 0 0) InP substrates Solar Energy Materials and Solar Cells. 92: 1003-1010. DOI: 10.1016/j.solmat.2008.02.042  0.01
2007 Newman FD, Aeby I, Varghese T, Endicter SP, Girard G, Turner MV, Sandoval AC, Fiedor JN, Link SD, Llera-Hurlburt D, Siergiej RR, Dashiell MW, Ehsani H. Pilot-production yield of indium phosphide-based thermophotovoltaic monolithically interconnected modules Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 663-666. DOI: 10.1109/WCPEC.2006.279542  0.01
2006 Dashiell MW, Beausang JF, Ehsani H, Nichols GJ, Depoy DM, Danielson LR, Talamo P, Rahner KD, Brown EJ, Burger SR, Fourspring PM, Topper WF, Baldasaro PF, Wang CA, Huang RK, et al. Quaternary InGaAsSb thermophotovoltaic diodes Ieee Transactions On Electron Devices. 53: 2879-2888. DOI: 10.1109/TED.2006.885087  0.01
2006 Ehsani H, Lewis N, Nichols GJ, Danielson L, Dashiell MW, Shellenbarger ZA, Wang CA. Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers Journal of Crystal Growth. 291: 77-81. DOI: 10.1016/j.jcrysgro.2006.02.054  0.01
2004 Kasper E, Eberhardt J, Jorke H, Luy JF, Kibbel H, Dashiell MW, Schmidt OG, Stoffel M. SiGe resonance phase transistor: Active transistor operation beyond the transit frequency fT Solid-State Electronics. 48: 837-840. DOI: 10.1016/j.sse.2003.12.007  0.01
2004 Oppenlander JE, Vell JL, Gaes WS, Siganporia DM, Danielson LR, Dashiell MW. The use of simulation for the design and analysis of thermophotovoltaic networks Collection of Technical Papers - 2nd International Energy Conversion Engineering Conference. 2: 1316-1325.  0.01
2004 DePoy DM, Fourspring PM, Baldasaro PF, Beausang JF, Brown EJ, Dashiell MW, Rahner KD, Rahmlow TD, Lazo-Wasem JE, Gratrix EJ, Wernsman B. Thermophotovoltaic spectral control Collection of Technical Papers - 2nd International Energy Conversion Engineering Conference. 3: 1928-1942.  0.01
2002 Dashiell MW, Denker U, Müller C, Costantini G, Manzano C, Kern K, Schmidt OG. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures Applied Physics Letters. 80: 1279-1281. DOI: 10.1063/1.1430508  0.01
2002 Dashiell MW, Denker U, Schmidt OG. Influence of the Si-Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (0 0 1) Physica E: Low-Dimensional Systems and Nanostructures. 13: 1030-1033. DOI: 10.1016/S1386-9477(02)00295-3  0.01
2002 Denker U, Dashiell MW, Jin-Phillipp NY, Schmidt OG. Trenches around and between self assembled silicon/germanium islands grown on silicon substrates investigated by atomic force microscopy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 166-170. DOI: 10.1016/S0921-5107(01)00833-9  0.01
2002 Dashiell MW, Müller C, Jin-Phillipp NY, Denker U, Schmidt OG, Eberl K. Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 106-110. DOI: 10.1016/S0921-5107(01)00811-X  0.01
2001 Dashiell MW, Denker U, Schmidt OG. Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) Applied Physics Letters. 79: 2261-2263. DOI: 10.1063/1.1405148  0.01
2000 Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions Materials Research Society Symposium - Proceedings. 594: 421-426.  0.01
1996 Hannon MH, Dashiell MW, DiNetta LC, Barnett AM. Lightweight, light-trapped, thin GaAs solar cell for spacecraft applications: progress and results update Conference Record of the Ieee Photovoltaic Specialists Conference. 191-194.  0.01
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