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Matthew J. Coppinger, Ph.D. - Publications

Affiliations: 
2011 Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Kim S, Bhargava N, Gupta J, Coppinger M, Kolodzey J. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34. PMID 24921801 DOI: 10.1364/Oe.22.011029  0.699
2013 Kim S, Gupta J, Bhargava N, Coppinger M, Kolodzey J. Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219. DOI: 10.1109/Led.2013.2278371  0.689
2013 Bhargava N, Coppinger M, Prakash Gupta J, Wielunski L, Kolodzey J. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816660  0.696
2013 Coppinger M, Hart J, Bhargava N, Kim S, Kolodzey J. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800448  0.71
2011 Coppinger M, Sustersic NA, Kolodzey J, Allik TH. Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50. DOI: 10.1117/1.3574066  0.706
2010 Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and optical characterization of Germanium-rich islands on silicon grown by Molecular Beam Epitaxy Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fmh2  0.743
2010 Nataraj L, Sustersic N, Coppinger M, Gerlein LF, Kolodzey J, Cloutier SG. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3371759  0.749
2009 Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377  0.732
2009 Aina L, Hier H, Fathimulla A, Lecates M, Kolodzey J, Goossen K, Coppinger M, Bhargava N. High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications Infrared Physics and Technology. 52: 310-316. DOI: 10.1016/J.Infrared.2009.05.011  0.542
2008 Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E. Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388. DOI: 10.1116/1.2891245  0.699
2007 Sustersic N, Kim S, Lv PC, Coppinger M, Troeger T, Kolodzey J. Terahertz emission from electrically pumped silicon germanium evtersubband devices International Journal of High Speed Electronics and Systems. 17: 115-120. DOI: 10.1142/9789812770332_0019  0.732
2007 Xuan G, Kim S, Coppinger M, Sustersic N, Kolodzey J, Lv PC. Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices Applied Physics Letters. 91. DOI: 10.1063/1.2768195  0.719
2006 Guangchi X, Adam TN, Suehle J, Fitzgerald E, Lv P, Sustersic N, Coppinger MJ, Kolodzey J. Xenon Difluoride dry etching of Si, SiGe alloy and Ge Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006.  0.539
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