Nupur Bhargava, Ph.D. - Publications

Affiliations: 
2013 Department of Electrical and Computer Engineering University of Delaware, Newark, DE, United States 
Area:
Electronics and Electrical Engineering

12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Hazbun R, Bhargava N, Rodriguez-Toro VA, Goossen K, Kolodzey J, Ram-Mohan LR, Aina L, Fathimulla A, Hier H. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates Infrared Physics and Technology. 69: 211-217. DOI: 10.1016/j.infrared.2015.01.023  0.84
2014 Kim S, Bhargava N, Gupta J, Coppinger M, Kolodzey J. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34. PMID 24921801 DOI: 10.1364/OE.22.011029  0.84
2014 Bhargava N, Gupta JP, Adam T, Kolodzey J. Structural properties of boron-doped germanium-Tin alloys grown by molecular beam epitaxy Journal of Electronic Materials. 43: 931-937. DOI: 10.1007/s11664-014-3088-3  0.84
2013 Kim S, Gupta J, Bhargava N, Coppinger M, Kolodzey J. Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219. DOI: 10.1109/LED.2013.2278371  0.84
2013 Bhargava N, Coppinger M, Prakash Gupta J, Wielunski L, Kolodzey J. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816660  0.84
2013 Gupta JP, Bhargava N, Kim S, Adam T, Kolodzey J. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4812747  0.84
2013 Coppinger M, Hart J, Bhargava N, Kim S, Kolodzey J. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800448  0.84
2013 Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53. DOI: 10.1016/j.jcrysgro.2012.12.002  0.84
2013 Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy Journal of Crystal Growth. 365: 35-43. DOI: 10.1016/j.jcrysgro.2012.11.067  0.84
2011 Kolodzey J, Coppinger M, Kim S, Bhargava N, Gupta J, Ni C, Yeo YK. The properties of germanium-tin alloys for infrared device applications 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135273  0.84
2011 Shah LR, Bhargava N, Kim S, Stearrett R, Kou X, Sun X, Sun S, Kolodzey J, Nowak ER, Xiao JQ. Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness Journal of Applied Physics. 109. DOI: 10.1063/1.3563096  0.84
2009 Faleev N, Sustersic N, Bhargava N, Coppinger M, Kolodzey J. SiGe lattice-mismatched epitaxial heterostructures: Types and density of crystalline defects related to epitaxial growth conditions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378083  0.84
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