P Daniel Dapkus - Publications

Affiliations: 
Electrical Engineering: Doctor of Philosophy University of Southern California, Los Angeles, CA, United States 
Area:
Electronics and Electrical Engineering

256 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR. Correction to InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays. Nano Letters. 18: 8070. PMID 30985152 DOI: 10.1021/nl302264j  1
2016 Arab S, Yao M, Zhou C, Daniel Dapkus P, Cronin SB. Doping concentration dependence of the photoluminescence spectra of n -type GaAs nanowires Applied Physics Letters. 108. DOI: 10.1063/1.4947504  0.56
2015 Yao M, Cong S, Arab S, Huang N, Povinelli ML, Cronin SB, Dapkus PD, Zhou C. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition. Nano Letters. PMID 26502060 DOI: 10.1021/acs.nanolett.5b03890  0.48
2015 Arab S, Anderson PD, Chi CY, Dapkus PD, Povinelli ML, Cronin SB. Observation of Asymmetric Nanoscale Optical Cavity in GaAs Nanosheets Acs Photonics. 2: 1124-1128. DOI: 10.1021/acsphotonics.5b00179  0.48
2014 Yao M, Huang N, Cong S, Chi CY, Seyedi MA, Lin YT, Cao Y, Povinelli ML, Dapkus PD, Zhou C. GaAs nanowire array solar cells with axial p-i-n junctions. Nano Letters. 14: 3293-303. PMID 24849203 DOI: 10.1021/nl500704r  1
2014 Sarkissian R, O'Brien JD, Dapkus PD. Laser dynamics: Probing microscopic processes in InGaN light emitters Journal of the Optical Society of America B: Optical Physics. 31: 3001-3007. DOI: 10.1364/JOSAB.31.003001  1
2014 Arab S, Yao M, Chi C, Zhou C, Dapkus PD, Cronin SB. Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures Proceedings of Spie - the International Society For Optical Engineering. 9168. DOI: 10.1117/12.2074531  1
2014 Arab S, Chi CY, Yao M, Chang CC, Dapkus PD, Cronin SB. Optical and electrical characterization of surface passivated GaAs nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2040999  1
2014 Arab S, Anderson PD, Yao M, Zhou C, Dapkus PD, Povinelli ML, Cronin SB. Enhanced Fabry-Perot resonance in GaAs nanowires through local field enhancement and surface passivation Nano Research. 7: 1146-1153. DOI: 10.1007/s12274-014-0477-0  1
2014 Chang CC, Chi CY, Chen CC, Huang N, Arab S, Qiu J, Povinelli ML, Dapkus PD, Cronin SB. Carrier dynamics and doping profiles in GaAs nanosheets Nano Research. 7: 163-170. DOI: 10.1007/s12274-013-0383-x  1
2014 Lin YT, Yeh TW, Nakajima Y, Dapkus PD. Catalyst-free GaN nanorods synthesized by selective area growth Advanced Functional Materials. 24: 3162-3171. DOI: 10.1002/adfm.201303671  1
2013 Chi CY, Chang CC, Hu S, Yeh TW, Cronin SB, Dapkus PD. Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures. Nano Letters. 13: 2506-15. PMID 23634790 DOI: 10.1021/nl400561j  1
2013 Hu S, Chi CY, Fountaine KT, Yao M, Atwater HA, Dapkus PD, Lewis NS, Zhou C. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes Energy and Environmental Science. 6: 1879-1890. DOI: 10.1039/c3ee40243f  1
2013 Li Y, Dapkus PD. Silicon-microring-based modulation of 120 gbps dpsk signal Cleo: Science and Innovations, Cleo_si 2013 1
2012 Lin YT, Yeh TW, Dapkus PD. Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition. Nanotechnology. 23: 465601. PMID 23093007 DOI: 10.1088/0957-4484/23/46/465601  0.76
2012 Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB. Electrical and optical characterization of surface passivation in GaAs nanowires. Nano Letters. 12: 4484-9. PMID 22889241 DOI: 10.1021/nl301391h  1
2012 Madaria AR, Yao M, Chi C, Huang N, Lin C, Li R, Povinelli ML, Dapkus PD, Zhou C. Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth. Nano Letters. 12: 2839-45. PMID 22594573 DOI: 10.1021/nl300341v  1
2012 Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. Nano Letters. 12: 3257-62. PMID 22587013 DOI: 10.1021/nl301307a  1
2012 Li Y, Stewart LS, Dapkus PD. High speed silicon microring modulator employing dynamic intracavity energy balance. Optics Express. 20: 7404-14. PMID 22453420 DOI: 10.1364/OE.20.007404  1
2012 Yao M, Madaria AR, Chi C, Huang N, Lin C, Povinelli ML, Daniel Dapkus P, Zhou C. Scalable synthesis of vertically aligned, catalyst-free gallium arsenide nanowire arrays - Towards optimized optical absorption Proceedings of Spie - the International Society For Optical Engineering. 8373. DOI: 10.1117/12.919283  0.84
2012 Sburlan S, Nakano A, Dapkus PD. Effect of substrate strain on critical dimensions of highly lattice mismatched defect-free nanorods Journal of Applied Physics. 111. DOI: 10.1063/1.3688288  1
2012 Yeh TW, Lin YT, Ahn B, Stewart LS, Daniel Dapkus P, Nutt SR. Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets Applied Physics Letters. 100. DOI: 10.1063/1.3671182  0.8
2012 Dapkus PD, Yeh TW, Lin Y. InGaN/GaN nanostructures for efficient LEDs Asia Communications and Photonics Conference, Acp 2012 1
2011 Stewart LS, Dapkus PD. In-plane thermally tuned silicon on insulator wavelength selective reflector 2011 Ieee Winter Topicals, Wtm 2011. 123-124. DOI: 10.1109/PHOTWTM.2011.5730078  1
2011 Yeh TW, Stewart L, Chu HJ, Dapkus PD. GaN nanorods for improved light emitting diode performance 2011 Ieee Winter Topicals, Wtm 2011. 29-30. DOI: 10.1109/PHOTWTM.2011.5730030  1
2011 Lu L, Seyedi MA, Mock A, Bagheri M, Dapkus PD, O'Brien JD. Integrated photonic crystal components International Conference On Transparent Optical Networks. DOI: 10.1109/ICTON.2011.5971081  1
2011 Chu HJ, Yeh T, Stewart L, Dapkus PD. III-V nanowire array growth by selective area epitaxy Aip Conference Proceedings. 1399: 225-226. DOI: 10.1063/1.3666336  1
2011 Li Y, Stewart LS, Daniel Dapkus P. Novel coupling modulator design using ring-resonator-based light drop structure Optics Infobase Conference Papers 0.96
2010 Chu HJ, Yeh TW, Stewart L, Dapkus PD. Wurtzite InP nanowire arrays grown by selective area MOCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2494-2497. DOI: 10.1002/pssc.200983910  1
2009 Lu L, Mock A, Hwang EH, O'Brien J, Dapkus PD. High-peak-power efficient edge-emitting photonic crystal nanocavity lasers. Optics Letters. 34: 2646-8. PMID 19724519  0.48
2008 Lu L, Mock A, Bagheri M, Hwang EH, O'Brien J, Dapkus PD. Double-heterostructure photonic crystal lasers with lower thresholds and higher slope efficiencies obtained by quantum well intermixing. Optics Express. 16: 17342-7. PMID 18958017  0.48
2008 Li Y, Zhang L, Song M, Zhang B, Yang JY, Beausoleil RG, Willner AE, Dapkus PD. Coupled-ring-resonator-based silicon modulator for enhanced performance. Optics Express. 16: 13342-8. PMID 18711571  1
2007 Shih MH, Mock A, Bagheri M, Suh NK, Farrell S, Choi SJ, O'Brien JD, Dapkus PD. Photonic crystal lasers in InGaAsP on a SiO(2)/Si substrates and its thermal impedance. Optics Express. 15: 227-32. PMID 19532238 DOI: 10.1117/12.470908  1
2007 Shih MH, Mock A, Bagheri M, Suh NK, Farrell S, Choi SJ, O'Brien JD, Dapkus PD. Photonic crystal lasers in InGaAsP on a SiO2/Si substrate and its thermal impedance Optics Express. 15: 227-232. DOI: 10.1364/OE.15.000227  1
2007 Mock A, Kuang W, Shih MH, Hwang EH, Kim WJ, O'Brien JD, Dapkus PD. Spectral properties of photonic crystal double-heterostructure resonant cavities Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 124-125. DOI: 10.1109/LEOS.2006.278905  1
2007 Khatsevich S, Rich DH, Zhang X, Dapkus PD. Correlating exciton localization with compositional fluctuations in InGaNGaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms Journal of Applied Physics. 102. DOI: 10.1063/1.2802291  1
2007 Stapleton A, Farrell S, Peng Z, Choi SJ, Christen L, O'Brien J, Dapkus PD, Willner A. Low vπ modulators containing InGaAsP/InP microdisk phase modulators Applied Physics Letters. 90. DOI: 10.1063/1.2728035  1
2007 Shih MH, Bagheri M, Mock A, Choi SJ, O'Brien JD, Dapkus PD, Kuang W. Identification of modes and single mode operation of sapphire-bonded photonic crystal lasers under continuous-wave room temperature operation Applied Physics Letters. 90. DOI: 10.1063/1.2715107  1
2006 Shih MH, Kuang W, Mock A, Bagheri M, Hwang EH, O'Brien JD, Dapkus PD. High-quality-factor photonic crystal heterostructure laser Applied Physics Letters. 89. DOI: 10.1063/1.2345912  1
2006 Zhou W, Ren D, Dapkus PD. Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates Journal of Crystal Growth. 290: 11-17. DOI: 10.1016/j.jcrysgro.2005.12.108  1
2006 O'Brien J, Shih MH, Yang T, Bagheri M, Marshall WK, Dapkus PD, Deppe DG. Photonic crystal devices 2006 6th Ieee Conference On Nanotechnology, Ieee-Nano 2006. 2: 727-730.  1
2005 Kuang W, Cao JR, Yang T, Choi SJ, Lee PT, O'Brien JD, Dapkus PD. Classification of modes in suspended-membrane, 19-missing-hole photonic-crystal microcavities Journal of the Optical Society of America B: Optical Physics. 22: 1092-1099. DOI: 10.1364/JOSAB.22.001092  1
2005 Choi SJ, Peng Z, Yang Q, Dapkus PD. Bus-coupled microresonator lasers Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 285-294. DOI: 10.1117/12.590836  1
2005 Shih MH, Kim WJ, Kuang W, Cao JR, Choi SJ, O'Brien JD, Dapkus PD. Experimental characterization of the reflectance of 60° waveguide bends in photonic crystal waveguides Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923169  1
2005 Ren D, Dapkus PD. Anisotropic Mg incorporation in GaN growth on nonplanar templates Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1870121  1
2005 Ren D, Zhou W, Dapkus PD. Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866502  1
2005 Zhou W, Ren D, Dapkus PD. Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition Journal of Crystal Growth. 283: 31-40. DOI: 10.1016/j.jcrysgro.2005.05.046  1
2004 Ryu SW, Dapkus PD. Optical characterization and determination of conduction band offset of type-II GaAsSb/InGaAs QW Semiconductor Science and Technology. 19: 1369-1372. DOI: 10.1088/0268-1242/19/12/007  1
2004 Choi SJ, Peng Z, Yang Q, Dapkus PD. Tunable microdisk resonators vertically coupled to bus waveguides using epitaxial regrowth and wafer bonding techniques Applied Physics Letters. 84: 651-653. DOI: 10.1063/1.1644915  1
2004 Khatsevich S, Rich DH, Zhang X, Zhou W, Dapkus PD. Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence Journal of Applied Physics. 95: 1832-1842. DOI: 10.1063/1.1641146  1
2004 Pataro LL, Deng Y, Dapkus PD. Asymmetric heterostructure design considerations for high-power lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 469-470.  1
2003 Choi SJ, Djordjev K, Dapkus PD. Microdisk lasers vertically coupled to output waveguides Ieee Photonics Technology Letters. 15: 1330-1332. DOI: 10.1109/LPT.2003.817990  1
2003 Cao JR, Kuang W, Choi SJ, Lee PT, O'Brien JD, Dapkus PD. Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers Applied Physics Letters. 83: 4107-4109. DOI: 10.1063/1.1627466  1
2002 Cao JR, Lee PT, Choi SJ, O'Brien JD, Dapkus PD. Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers. Journal of Nanoscience and Nanotechnology. 2: 313-5. PMID 12908256 DOI: 10.1166/jnn.2002.101  1
2002 Choi SJ, Djordjev K, Dapkus PD. CH4-based dry etching of high Q InP microdisks Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 301-305. DOI: 10.1116/1.1445164  1
2002 Djordjev K, Choi SJ, Dapkus PD. Vertically coupled InP microdisk switching devices with electroabsorptive active regions Ieee Photonics Technology Letters. 14: 1115-1117. DOI: 10.1109/LPT.2002.1021987  1
2002 Djordjev K, Choi SJ, Dapkus PD. Microdisk tunable resonant filters and switches Ieee Photonics Technology Letters. 14: 828-830. DOI: 10.1109/LPT.2002.1003107  1
2002 Djordjev K, Choi SJ, Dapkus PD. Study of the effects of the geometry on the performance of vertically coupled InP microdisk resonators Journal of Lightwave Technology. 20: 1485-1492. DOI: 10.1109/JLT.2002.800375  1
2002 Djordjev K, Choi SJ, Dapkus PD. High-Q vertically coupled InP microdisk resonators Ieee Photonics Technology Letters. 14: 331-333. DOI: 10.1109/68.986803  1
2002 Djordjev K, Choi SJ, Dapkus PD. Active semiconductor microdisk devices Journal of Lightwave Technology. 20: 105-113. DOI: 10.1109/50.974825  1
2002 Djordjev K, Choi SJ, Dapkus PD. Gain trimming of the resonant characteristics in vertically coupled InP microdisk switches Applied Physics Letters. 80: 3467-3469. DOI: 10.1063/1.1476701  1
2002 Ryu SW, Dapkus PD. Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates Electronics Letters. 38: 564-565. DOI: 10.1049/el:20020410  1
2002 Djordjev K, Choi SJ, Dapkus PD. Active semiconductor microdisk switching devices utilizing gain and electroabsorption effects Conference On Optical Fiber Communication, Technical Digest Series. 70.  1
2002 Cao JR, Lee PT, Choi SJ, O'Brien JD, Dapkus PD. Lithographic tuning of 2-D photonic crystal lasers Conference On Optical Fiber Communication, Technical Digest Series. 70: 152-153.  1
2001 Lin CK, Dapkus PD. Uniform wafer-bonded oxide-confined bottom-emitting 850-nm VCSEL arrays on sapphire substrates Ieee Photonics Technology Letters. 13: 263-265. DOI: 10.1109/68.917819  1
2001 Painter O, Srinivasan K, O'Brien JD, Scherer A, Dapkus PD. Tailoring of the resonant mode properties of optical nanocavities in two-dimensional photonic crystal slab waveguides Journal of Optics a: Pure and Applied Optics. 3. DOI: 10.1088/1464-4258/3/6/367  1
2001 Ryu SW, Dapkus PD. Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 μm Electronics Letters. 37: 177-178. DOI: 10.1049/el:20010126  1
2000 Ryu SW, Dapkus PD. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates Electronics Letters. 36: 1387-1388. DOI: 10.1049/el:20000853  1
2000 Zhang X, Dapkus PD, Rich DH. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation Applied Physics Letters. 77: 1496-1498.  1
2000 Zhang X, Li RR, Dapkus PD, Rich DH. Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique Applied Physics Letters. 77: 2213-2215.  1
1999 Painter O, Lee RK, Scherer A, Yariv A, O'Brien JD, Dapkus PD, Kim I. Two-dimensional photonic band-Gap defect mode laser Science (New York, N.Y.). 284: 1819-21. PMID 10364550 DOI: 10.1126/SCIENCE.284.5421.1819  0.68
1999 Choi WJ, Dapkus PD, Jewell JJ. 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition Ieee Photonics Technology Letters. 11: 1572-1574. DOI: 10.1109/68.806850  1
1999 Lin CK, Ryu SW, Dapkus PD. High-performance wafer-bonded bottom-emitting 850-nm VCSEL's on undoped GaP and sapphire substrates Ieee Photonics Technology Letters. 11: 1542-1544. DOI: 10.1109/68.806840  1
1999 Lin CK, Ryu SW, Choi WJ, Dapkus PD. Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates Ieee Photonics Technology Letters. 11: 937-939. DOI: 10.1109/68.775305  1
1999 Choi WJ, Dapkus PD. Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser Ieee Photonics Technology Letters. 11: 773-775. DOI: 10.1109/68.769703  1
1999 Bond AE, Dapkus PD, O'Brien JD. Aperture dependent loss analysis in vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 11: 397-399. DOI: 10.1109/68.752527  1
1999 Painter OJ, Husain A, Scherer A, O'Brien JD, Kim I, Dapkus PD. Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP Journal of Lightwave Technology. 17: 2082-2088. DOI: 10.1109/50.802998  1
1999 Bond AE, Dapkus PD, O'Brien JD. Design of low-loss single-mode vertical-cavity surface-emitting lasers Ieee Journal On Selected Topics in Quantum Electronics. 5: 574-581. DOI: 10.1109/2944.788420  1
1999 Choi WJ, Dapkus PD. Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 533-534.  1
1999 Lin CK, Dapkus PD. High performance oxide-confined bottom-emitting 850 nm VCSEL array on sapphire substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 259-260.  1
1999 Kobayashi NP, Kobayashi JT, Zhang X, Dapkus PD, Rich DH. Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate Applied Physics Letters. 74: 2836-2838.  1
1998 Bond AE, Dapkus PD, O'Brien JD. Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 10: 1362-1364. DOI: 10.1109/68.720261  1
1998 Bond AE, Dapkus PD. Vertical-cavity surface-emitting lasers with spatially adjustable DBR reflectivity to enable free-space photonic repeaters Ieee Photonics Technology Letters. 10: 636-638. DOI: 10.1109/68.669218  1
1998 Hoanca B, Dubovitsky S, Zhu DX, Sawchuk AA, Steier WH, Dapkus PD. All-optical routing using wavelength recognizing switches Journal of Lightwave Technology. 16: 2243-2254. DOI: 10.1109/50.736591  1
1998 Kim I, Uppal K, Dapkus PD. Gain saturation in traveling-wave semiconductor optical amplifiers Ieee Journal of Quantum Electronics. 34: 1949-1952. DOI: 10.1109/3.720231  1
1998 Choi WJ, Dapkus PD. Self-defined AlAs-oxide-current-aperture buried heterostructure vertical cavity surface-emitting laser Applied Physics Letters. 73: 1661-1663. DOI: 10.1063/1.122238  1
1998 Kobayashi NP, Kobayashi JT, Choi WJ, Dapkus PD. Single-crystal α-GaN grown on a α-Ga2O3 template layer Applied Physics Letters. 73: 1553-1555. DOI: 10.1063/1.122218  1
1998 Zhang X, Rich DH, Kobayashi JT, Kobayashi NP, Dapkus PD. Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence Applied Physics Letters. 73: 1430-1432. DOI: 10.1063/1.121966  1
1998 Bond AE, Dapkus PD. Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels Applied Physics Letters. 73: 19-21. DOI: 10.1063/1.121709  1
1998 Choi WJ, Dapkus PD. Selective growth and regrowth of high Al content AlGaAs for use in BH lasers Journal of Crystal Growth. 195: 495-502.  1
1998 Kim I, Chang DG, Dapkus PD. Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBA Journal of Crystal Growth. 195: 138-143.  1
1998 Kim I, Uppal K, Choi WJ, Dapkus PD. Composition control of InGaAsP in metalorganic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine Journal of Crystal Growth. 193: 293-299.  1
1998 Zhang X, Rich DH, Lin CK, Dapkus PD. Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique Journal of Applied Physics. 84: 1095-1100.  1
1998 Kobayashi JT, Kobayashi NP, Zhang X, Dapkus PD, Rich DH. Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD Journal of Crystal Growth. 195: 252-257.  1
1997 Tishinin D, Uppal K, Kim I, Dapkus PD. 1.3-μm Polarization insensitive amplifiers with integrated-mode transformers Ieee Photonics Technology Letters. 9: 1337-1339. DOI: 10.1109/68.623255  1
1997 MacDougal MH, Dapkus PD. Wavelength shift of selectively oxidized Al xO y-AlGaAs-GaAs distributed bragg reflectors Ieee Photonics Technology Letters. 9: 884-886. DOI: 10.1109/68.593333  1
1997 Uppal K, Tishinin D, Kim I, Dapkus PD. Study of 1.3-μm tapered waveguide spotsize transformers Ieee Journal On Selected Topics in Quantum Electronics. 3: 975-979. DOI: 10.1109/2944.640652  1
1997 Uppal K, Tishinin D, Dapkus PD. Characterization of mixed strain quantum well structures Journal of Applied Physics. 81: 390-393.  1
1997 Kobayashi JT, Kobayashi NP, Dapkus PD. Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach Journal of Electronic Materials. 26: 1114-1117.  1
1997 Lin CK, Zhang X, Dapkus PD, Rich DH. Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique Applied Physics Letters. 71: 3108-3110.  1
1997 Choi WJ, Dapkus PD, Lee S, Rich D. InGaAs quantum well diode lasers with regrown Al containing layers for application to current confinement structures Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 525-526.  1
1997 Rammohan K, Rich DH, MacDougal MH, Dapkus PD. Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique Applied Physics Letters. 70: 1599-1601.  1
1997 Kobayashi JT, Kobayashi NP, Dapkus PD, Zhang X, Rich DH. Initial stages of MOCVD growth of gallium nitride using a multistep growth approach Materials Research Society Symposium - Proceedings. 468: 187-191.  1
1997 Kobayashi JT, Kobayashi NP, Dapkus PD, Zhang X, Rich DH. Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor Leos Summer Topical Meeting. 10.  1
1996 Cheng Y, Dapkus PD, MacDougal MH, Yang GM. Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide Ieee Photonics Technology Letters. 8: 176-178. DOI: 10.1109/68.484232  1
1996 Mathur A, Dapkus PD. Fabrication, characterization and analysis of low threshold current density 1.55-μm-strained quantum-well lasers Ieee Journal of Quantum Electronics. 32: 222-226. DOI: 10.1109/3.481869  1
1996 Uppal K, Tishinin D, Dapkus PD. 1.3μm polarization insensitive tapered waveguide mode conversion structures with mixed quantum well active regions Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 191-192.  1
1995 Mathur A, Dapkus PD. 1.55-μm Dual-Polarization Lasers Implemented with Compressive and Tensile-Strained Quantum Wells Ieee Photonics Technology Letters. 7: 1243-1245. DOI: 10.1109/68.473459  1
1995 Yang GM, MacDougal MH, Pudikov V, Dapkus PD. Influence of Mirror Reflectivity on Laser Performance of Very-Low-Threshold Vertical-Cavity Surface-Emitting Lasers Ieee Photonics Technology Letters. 7: 1228-1230. DOI: 10.1109/68.473454  1
1995 Uppal K, Dapkus PD, Mathur A. Strain Effects on InGaP-InGaAsP-GaAsP Tensile Strained Quantum-Well Lasers Ieee Photonics Technology Letters. 7: 1128-1130. DOI: 10.1109/68.466565  1
1995 Yang GM, MacDougal MH, Zhao H, Dapkus PD. Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells Journal of Applied Physics. 78: 3605-3609. DOI: 10.1063/1.359936  1
1995 Hummel SG, MacDougal MH, Dapkus PD. Extremely wide-bandwidth distributed Bragg reflectors using chirped semiconductor/oxide pairs Electronics Letters. 31: 972-973. DOI: 10.1049/el:19950676  1
1995 Yang GM, MacDougal MH, Dapkus PD. Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation Electronics Letters. 31: 886-888. DOI: 10.1049/el:19950610  1
1995 Jow MY, Maa BY, Morishita T, Dapkus PD. Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine Journal of Electronic Materials. 24: 25-29. DOI: 10.1007/BF02659722  1
1994 Dubovitsky S, Dapkus PD, Mathur A, Steier WH. Wavelength Conversion in a Quantum Well Polarization Insensitive Amplifier Ieee Photonics Technology Letters. 6: 804-807. DOI: 10.1109/68.311460  1
1994 Dubovitsky S, Mathur A, Steier WH, Dapkus PD. Gain Saturation Properties of a Polarization Insensitive Semiconductor Amplifier Implemented with Tensile and Compressive Strain Quantum Wells Ieee Photonics Technology Letters. 6: 176-178. DOI: 10.1109/68.275420  1
1994 Kawase M, Gannire E, Lee HC, Dapkus PD. Single-Pulse Pump-Probe Measurement of Optical Nonlinear Properties in GaAs/AIGaAs Multiple Quantum Wells Ieee Journal of Quantum Electronics. 30: 981-988. DOI: 10.1109/3.291369  1
1994 Dubovitsky S, Steier WH, Mathur A, Dapkus PD. Gain Saturation Properties of a Semiconductor Gain Medium with Tensile and Compressive Strain Quantum Wells Ieee Journal of Quantum Electronics. 30: 380-391. DOI: 10.1109/3.283785  1
1994 Frateschi NC, Jow MY, Dapkus PD, Levi AFJ. InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy Applied Physics Letters. 65: 1748-1750. DOI: 10.1063/1.112905  1
1994 Zhao H, Uppal K, MacDougal MH, Daniel Dapkus P, Lin H, Rich DH. Growth and doping properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for applications to low threshold lasers Journal of Crystal Growth. 145: 824-831. DOI: 10.1016/0022-0248(94)91149-5  0.56
1994 Dubovitsky S, Steier WH, Mathur A, Dapkus PD. Novel optical nonlinearity in a semiconductor gain medium and its applications to wavelength filtering Ieee Nonlinear Optics: Materials, Fundamentals and Applications - Conference Proceedings. 138-140.  1
1994 Zhao H, MacDougal MH, Uppal K, Dapkus PD. Sub-milliampere threshold InGaAs/GaAs/AlGaAs laser array elements by single step growth on nonplanar substrates Conference Digest - Ieee International Semiconductor Laser Conference. 18-19.  1
1993 Mathur A, Osinski JS, Grodzinski P, Dapkus PD. Comparative Study of Low-Threshold 1.3 µm Strained and Lattice-Matched Quantum-Well Lasers Ieee Photonics Technology Letters. 5: 753-755. DOI: 10.1109/68.229795  1
1993 Frateschi NC, Ou SS, Dapkus PD, Yang JJ, Jansen M. Low Threshold In GaAs/GaAs 45° Folded Cavity Surface-Emitting Laser Grown on Structured Substrates Ieee Photonics Technology Letters. 5: 741-743. DOI: 10.1109/68.229791  1
1993 Jayaraman V, Coldren LA, Mathur A, Dapkus PD. Extended Tuning Range in Sampled Grating DBR Lasers Ieee Photonics Technology Letters. 5: 489-491. DOI: 10.1109/68.215257  1
1993 Sahara RT, Hummel SG, Steier WH, Dapkus PD. AlGaAs waveguide optically controlled directional coupler latch Journal of Lightwave Technology. 11: 1533-1538. DOI: 10.1109/50.249892  1
1993 Kawase M, Garmire E, Lee HC, Dapkus PD. Impact of amplified spontaneous emission on carrier density for measurement of optical nonlinearities in GaAs/AlGaAs multiple quantum wells Ieee Journal of Quantum Electronics. 29: 2306-2312. DOI: 10.1109/3.245559  1
1993 Osinski JS, Grodzinski P, Zou Y, Dapkus PD. Threshold Current Analysis of Compressive Strain (0–1.8%) in Low-Threshold, Long-Wavelength Quantum Well Lasers Ieee Journal of Quantum Electronics. 29: 1576-1585. DOI: 10.1109/3.234408  0.68
1993 Maa BY, Dapkus PD, Chen P, Madhukar A. Real-time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs Applied Physics Letters. 62: 2551-2553. DOI: 10.1063/1.109293  1
1993 Chen Q, Dapkus PD. Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium Thin Solid Films. 225: 115-119. DOI: 10.1016/0040-6090(93)90138-F  1
1993 Maa BY, Dapkus PD. Study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium by reflectance difference spectroscopy and mass spectroscopy Thin Solid Films. 225: 12-16. DOI: 10.1016/0040-6090(93)90119-A  1
1992 Zou Y, Osinski JS, Rideout W, Grodzinski P, Sharfin WF, Dapkus PD, Crawford FD. Experimental Verification of Strain Benefits in 1.5 jam Semiconductor Lasers by Carrier Lifetime and Gain Measurements Ieee Photonics Technology Letters. 4: 1315-1318. DOI: 10.1109/68.180561  0.68
1992 Osinski JS, Zou Y, Grodzinski P, Mathur A, Dapkus PD. Low-Threshold-Current-Density 1.5 μm Lasers Using Compressively Strained InGaAsP Quantum Wells Ieee Photonics Technology Letters. 4: 10-13. DOI: 10.1109/68.124858  1
1992 Frateschi NC, Osinski JS, Beyler CA, Dapkus PD. Low-Threshold Single-Quantum-Well InGaAs/GaAs Lasers Grown by Metal-Organic Chemical Vapor Deposition on Structured Substrates Ieee Photonics Technology Letters. 4: 209-212. DOI: 10.1109/68.122368  1
1992 Mathur A, Dapkus PD. Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers Applied Physics Letters. 61: 2845-2847. DOI: 10.1063/1.108052  1
1992 Hummel SG, Zou Y, Beyler CA, Grodzinski P, Dapkus PD, McManus JV, Zhang Y, Skromme BJ, Lee WI. Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator Applied Physics Letters. 60: 1483-1485. DOI: 10.1063/1.107278  1
1992 Chen Q, Beyler CA, Dapkus PD, Alwan JJ, Coleman JJ. Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of device quality GaAs Applied Physics Letters. 60: 2418-2420. DOI: 10.1063/1.106991  1
1992 Mathur A, Grodzinski P, Osinski JS, Dapkus PD. Low threshold 1.3 μm strained and lattice matched quantum well lasers Journal of Crystal Growth. 124: 730-736. DOI: 10.1016/0022-0248(92)90543-R  1
1992 Frateschi NC, Dapkus PD. Growth of semiconductor laser structures with integrated epitaxial Bragg reflectors on non-planar substrates Journal of Crystal Growth. 124: 192-198. DOI: 10.1016/0022-0248(92)90459-V  1
1991 Sahara RT, Steier WH, Hummel SG, Dapkus PD. AlGaAs/GaAs optically controlled wave-plate modulator. Optics Letters. 16: 1958-60. PMID 19784194 DOI: 10.1364/OL.16.001958  0.48
1991 Chen Q, Dapkus PD. On the Thermal Decomposition of Trimethylgallium—a Molecular Beam Sampling Mass Spectroscopy Study Journal of the Electrochemical Society. 138: 2821-2826. DOI: 10.1149/1.2086064  1
1991 Maa BY, Dapkus PD. Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsine Applied Physics Letters. 58: 1762-1764. DOI: 10.1063/1.105083  1
1991 Maa BY, Dapkus PD. Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine Applied Physics Letters. 58: 2261-2263. DOI: 10.1063/1.104916  1
1991 Zou Y, Grodzinski P, Osinski JS, Dapkus PD. Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes Applied Physics Letters. 58: 717-719. DOI: 10.1063/1.104525  1
1991 Grodzinski P, Zou Y, Osinski JS, Dapkus PD. Investigation of InxGa1-xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVD Journal of Crystal Growth. 107: 583-590. DOI: 10.1016/0022-0248(91)90525-A  1
1991 Maa BY, Dapkus PD. Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy Journal of Electronic Materials. 20: 589-593. DOI: 10.1007/BF02669522  1
1991 Osinski JS, Grodzinski P, Zuo Y, Dapkus PD. Evidence of gain enhancement in long wavelength strained quantum well laser diodes Electronics Letters. 27: 469-470.  1
1991 Beyler CA, Hummel SG, Frateschi N, Dapkus PD. Small dimension bragg reflectors formed by air-isolated GaAs layers Electronics Letters. 27: 588-590.  1
1991 Frateschi NC, Hummel SG, Dapkus PD. In situ laser reflectometry applied to the growth of AlxGa1-xAs Bragg reflectors by metalorganic chemical vapour deposition Electronics Letters. 27: 155-157.  1
1990 Chen Q, Osinski JS, Dapkus PD. Quantum well lasers with active region grown by laser-assisted atomic layer epitaxy Applied Physics Letters. 57: 1437-1439. DOI: 10.1063/1.103363  1
1990 Osinski JS, Dzurko KM, Hummel SG, Dapkus PD. Optimization of stripe width for low-threshold operation of quantum well laser diodes Applied Physics Letters. 56: 2487-2489. DOI: 10.1063/1.102887  1
1990 Maa BY, Dapkus PD. Studies of TMGa adsorption on thin GaAs and InAs (001) layers Journal of Crystal Growth. 105: 213-220. DOI: 10.1016/0022-0248(90)90364-Q  1
1990 Dzurko KM, Hummell SG, Menu EP, Dapkus PD. MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: Evidence for lateral gas phase diffusion Journal of Electronic Materials. 19: 1367-1372. DOI: 10.1007/BF02662826  1
1990 Maa BY, Dapkus PD. RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces-Relevance to atomic layer epitaxy Journal of Electronic Materials. 19: 289-294. DOI: 10.1007/BF02651286  1
1989 Garmire E, Jokerst NM, Kost A, Danner A, Dapkus PD. Optical nonlinearities due to carrier transport in semiconductors Journal of the Optical Society of America B: Optical Physics. 6: 579-587. DOI: 10.1364/JOSAB.6.000579  0.48
1989 DenBaars SP, Maa BY, Dapkus PD, Melas A. Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine Journal of the Electrochemical Society. 136: 2067-2069. DOI: 10.1149/1.2097171  1
1989 Jeong WG, Menu EP, Dapkus PD. Steric hindrance effects in atomic layer epitaxy of InAs Applied Physics Letters. 55: 244-246. DOI: 10.1063/1.101920  1
1989 DenBaars SP, Dapkus PD. Atomic layer epitaxy of compound semiconductors with metalorganic precursors Journal of Crystal Growth. 98: 195-208. DOI: 10.1016/0022-0248(89)90199-1  1
1989 Sahara RT, Steier WH, Menu E, Dapkus PD. Direct measurement of Urbach absorption in AlGaAs/GaAs quantum well waveguides Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 16.  1
1988 Danner AD, Dzurko KM, Dapkus PD. IIB-2 Lateral Collection Doping Superlattice Photodiodes Ieee Transactions On Electron Devices. 35: 2434. DOI: 10.1109/16.8843  1
1988 Kost A, Garmire E, Danner A, Dapkus PD. Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structure Applied Physics Letters. 52: 637-639. DOI: 10.1063/1.99389  1
1988 Danner AD, Dapkus PD, Kost A, Garmire E. Nonlinear optical absorption in GaAs doping superlattices Journal of Applied Physics. 64: 5206-5209. DOI: 10.1063/1.342433  1
1988 Kim BG, Garmire E, Hummel SG, Dapkus PD. Nonlinear Bragg reflector based on saturable absorption . 64-66. DOI: 10.1063/1.100768  1
1988 Dapkus PD, DenBaars SP. Atomic layer epitaxy for the growth of heterostructures Technical Digest - International Electron Devices Meeting. 472-474.  1
1988 Kost A, Garmire E, Danner A, Dapkus PD. Nonlinear optics in hetero n-i-p-i structures . 60-63.  1
1987 Sunderland DA, Dapkus PD. Optimizing N-p-n and P-n-p Heterojunction Bipolar Transistors for Speed Ieee Transactions On Electron Devices. 34: 367-377. DOI: 10.1109/T-ED.1987.22932  1
1987 Dapkus PD. Introduction to the Special Issue on Semiconductor Lasers Ieee Journal of Quantum Electronics. 23: 650. DOI: 10.1109/JQE.1987.1073453  0.68
1987 Denbaars SP, Beyler CA, Hariz A, Dapkus PD. GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy Applied Physics Letters. 51: 1530-1532. DOI: 10.1063/1.98625  1
1987 Lee HC, Dzurko KM, Dapkus PD, Garmire E. Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate Applied Physics Letters. 51: 1582-1584. DOI: 10.1063/1.98561  1
1986 Sunderland DA, Dapkus PD. IIIA-8 The Effect of Structural Enhancements on the Relative Performance of n-p-n and p-n-p Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 33: 1846. DOI: 10.1109/T-ED.1986.22781  1
1986 DenBaars SP, Maa BY, Dapkus PD, Danner AD, Lee HC. Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD Journal of Crystal Growth. 77: 188-193. DOI: 10.1016/0022-0248(86)90300-3  1
1985 Sunderland DA, Dapkus PD. The Performance Potential of P-n-p Heterojunction Bipolar Transistors Ieee Electron Device Letters. 6: 648-651. DOI: 10.1109/EDL.1985.26262  1
1984 Kirillov D, Merz JL, Dapkus PD, Coleman JJ. Laser beam heating and transformation of a GaAs-AlAs multiple-quantum-well structure Journal of Applied Physics. 55: 1105-1109. DOI: 10.1063/1.333200  1
1984 Dapkus PD. A critical comparison of MOCVD and MBE for heterojunction devices Journal of Crystal Growth. 68: 345-355. DOI: 10.1016/0022-0248(84)90436-6  1
1984 Hess KL, Kasemset DL, Dapkus PD. Growth and characterization of Ga1-xInxAs by low pressure metalorganic chemical vapor deposition Journal of Electronic Materials. 13: 779-798. DOI: 10.1007/BF02657926  1
1983 Kasemset D, Hong CS, Dapkus PD, Patel NB. Graded Barrier Single Quantum Well Lasers-Theory and Experiment Ieee Journal of Quantum Electronics. 19: 1025-1030. DOI: 10.1109/JQE.1983.1071974  1
1983 Hsieh TC, Hess K, Coleman JJ, Dapkus PD. Carrier density distribution in modulation doped GaAs-AlxGa1-xAs quantum well heterostructures Solid State Electronics. 26: 1173-1176. DOI: 10.1016/0038-1101(83)90145-4  1
1983 Coleman JJ, Holonyak N, Dapkus PD. QUANTUM WELL HETEROSTRUCTURE LASERS . 48-49.  1
1982 Ng WW, Liu YZ, Dapkus PD, Nakano K. A Monolithic GaInAsP/InP Photovoltaic Power Converter Ieee Transactions On Electron Devices. 29: 1449-1454. DOI: 10.1109/T-ED.1982.20895  1
1982 Milano RA, Dapkus PD, Stillman GE. An Analysis of the Performance of Heterojunction Phototransistors for Fiber Optic Communications Ieee Transactions On Electron Devices. 29: 266-274. DOI: 10.1109/T-ED.1982.20694  1
1982 Kasemset D, Hong CS, Patel NB, Dapkus PD. Very narrow graded-barrier single quantum well lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 41: 912-914. DOI: 10.1063/1.93352  1
1982 Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. Absorption measurements at high pressure on AlAs-AlxGa 1-xAs-GaAs superlattices Applied Physics Letters. 40: 821-824. DOI: 10.1063/1.93273  1
1982 Tabatabaie N, Stillman GE, Chin R, Dapkus PD. Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes Applied Physics Letters. 40: 415-417. DOI: 10.1063/1.93123  1
1982 Hong CS, Coleman JJ, Dapkus PD, Liu YZ. High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 40: 208-210. DOI: 10.1063/1.93042  1
1982 Yang JJJ, Dupuis RD, Dapkus PD. Theoretical analysis of single-mode AlGaAs-GaAs double heterostructure lasers with channel-guide structure Journal of Applied Physics. 53: 7218-7223. DOI: 10.1063/1.331619  1
1982 Kirchoefer SW, Holonyak N, Hess K, Meehan K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure measurements on AlxGa1-xAs-GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers Journal of Applied Physics. 53: 6037-6042. DOI: 10.1063/1.331553  1
1982 Kirchoefer SW, Holonyak N, Coleman JJ, Dapkus PD. Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers Journal of Applied Physics. 53: 766-768. DOI: 10.1063/1.329985  1
1982 Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers Solid State Communications. 42: 633-636. DOI: 10.1016/0038-1098(82)90807-9  1
1982 Hess KL, Dapkus PD, Manasevit HM, Low TS, Skromme BJ, Stillman GE. An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium Journal of Electronic Materials. 11: 1115-1137. DOI: 10.1007/BF02658919  1
1982 Ng W, Jiang CL, Dapkus PD. LOW THRESHOLD 1. 3 mu m GaInAsP/InP BURIED OPTICAL WAVEGUIDE LASERS Technical Digest - International Electron Devices Meeting. 357-359.  1
1981 Milano RA, Dapkus PD, Stillman GE. Heterojunction phototransistors for fiber-optic communications Proceedings of Spie - the International Society For Optical Engineering. 272: 43-50. DOI: 10.1117/12.965691  1
1981 Dapkus PD. Application of metalorganic chemical vapor deposition to lasers for integrated optoelectronics Proceedings of Spie - the International Society For Optical Engineering. 269: 8-12. DOI: 10.1117/12.959945  1
1981 Ng W, Nakano K, Dapkus PD. IVA-1 A Monolithic GaInAsP/InP Photovoltaic Power Converter Ieee Transactions On Electron Devices. 28: 1231. DOI: 10.1109/T-ED.1981.20551  0.68
1981 Ng WW, Dapkus PD. Growth and Characterization of 1.3 μm CW GalnAsP/lnP Lasers by Liquid-Phase Epitaxy Ieee Journal of Quantum Electronics. 17: 193-198. DOI: 10.1109/JQE.1981.1071063  1
1981 Chin R, Nakano K, Coleman JJ, Dapkus PD. Gunn Oscillation in GaAs Optically Triggered by 1.06 µm Radiation Ieee Electron Device Letters. 2: 248-249. DOI: 10.1109/EDL.1981.25420  1
1981 Hong CS, Liu YZ, Dapkus PD, Coleman JJ. Controlled Zn Diffusion for Low Threshold Narrow Stripe GaAlAs/GaAs DH Lasers Ieee Electron Device Letters. 2: 225-227. DOI: 10.1109/EDL.1981.25412  1
1981 Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Holonyak et al. Respond Physical Review Letters. 46: 1043. DOI: 10.1103/PhysRevLett.46.1043  1
1981 Ng W, Hong CS, Manasevit H, Dapkus PD. Low-threshold 1.3-μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition Applied Physics Letters. 39: 188-189. DOI: 10.1063/1.92697  1
1981 Holonyak N, Laidig WD, Camras MD, Coleman JJ, Dapkus PD. IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity Applied Physics Letters. 39: 102-104. DOI: 10.1063/1.92536  1
1981 Dapkus PD, Coleman JJ, Laidig WD, Holonyak N, Vojak BA, Hess K. Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1-xAs/GaAs superlattices Applied Physics Letters. 38: 118-120. DOI: 10.1063/1.92295  1
1981 Coleman JJ, Dapkus PD, Holonyak N, Laidig WD. Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition Applied Physics Letters. 38: 894-896. DOI: 10.1063/1.92219  1
1981 Laidig WD, Holonyak N, Camras MD, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Disorder of an AlAs-GaAs superlattice by impurity diffusion Applied Physics Letters. 38: 776-778. DOI: 10.1063/1.92159  1
1981 Vojak BA, Laidig WD, Holonyak N, Camras MD, Coleman JJ, Dapkus PD. HIGH-ENERGY (VISIBLE-RED) STIMULATED EMISSION IN GaAs. Journal of Applied Physics. 52: 621-626. DOI: 10.1063/1.328832  1
1981 Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. PHONON CONTRIBUTION TO METALORGANIC CHEMICAL VAPOR DEPOSITED Al//x Ga//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION. Journal of Applied Physics. 52: 959-968. DOI: 10.1063/1.328786  1
1981 Coleman JJ, Dapkus PD, Camras MD, Holonyak N, Laidig WD, Low TS, Burroughs MS, Hess K. ABSORPTION, STIMULATED EMISSION, AND CLUSTERING IN AlAs-Al//xGa//1// minus //xAs-GaAs SUPERLATTICES. Journal of Applied Physics. 52: 7291-7295. DOI: 10.1063/1.328717  1
1981 Holonyak N, Laidig WD, Camras MD, Hess K, Burroughs MS, Coleman JJ, Dapkus PD. SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF Al//xGa//1// minus //xAs-AlAs-GaAs QUANTUM-WELL HETEROSTRUCTURES. Journal of Applied Physics. 52: 6777-6782. DOI: 10.1063/1.328631  1
1981 Laidig WD, Holonyak N, Camras MD, Vojak BA, Hess K, Coleman JJ, Dapkus PD. Quenching of stimulated phonon emission in AlxGa1-xAs-GaAs quantum-well heterostructures Solid State Communications. 38: 301-304. DOI: 10.1016/0038-1098(81)90466-X  1
1981 Coleman JJ, Dapkus PD, Thompson DE, Clarke DR. The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures Journal of Crystal Growth. 55: 207-212. DOI: 10.1016/0022-0248(81)90289-X  1
1981 Dapkus PD, Manasevit HM, Hess KL, Low TS, Stillman GE. High purity GaAs prepared from trimethylgallium and arsine Journal of Crystal Growth. 55: 10-23. DOI: 10.1016/0022-0248(81)90265-7  1
1981 Dapkus PD, Coleman JJ, Holonyak N. QUANTUM WELL LASER STRUCTURE Technical Digest - International Electron Devices Meeting. 436-438.  1
1981 Coleman JJ, Dapkus PD, Yang JJJ. SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOUR DEPOSITION Electronics Letters. 17: 606-608.  1
1980 Law HD, Stone DR, Ng WW, Nakano K, Dapkus PD. TA-B3 High-Efficiency InGaAsP Photovoltaic Power Converter Ieee Transactions On Electron Devices. 27: 2186. DOI: 10.1109/T-ED.1980.20202  0.68
1980 Coleman JJ, Dapkus PD. MP-B2 Single Longitudinal Mode MOCVD GaAlAs-GaAs Self-Aligned Structure Lasers Ieee Transactions On Electron Devices. 27: 2180. DOI: 10.1109/T-ED.1980.20184  0.68
1980 Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Quantum-Well Heterostructure Lasers Ieee Journal of Quantum Electronics. 16: 170-186. DOI: 10.1109/JQE.1980.1070447  1
1980 Holonyak N, Laidig WD, Vojak BA, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures Physical Review Letters. 45: 1703-1706. DOI: 10.1103/PhysRevLett.45.1703  1
1980 Coleman JJ, Dapkus PD. Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers Applied Physics Letters. 37: 262-263. DOI: 10.1063/1.91900  1
1980 Holonyak N, Vojak BA, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Phonon contribution to double-heterojunction laser operation Applied Physics Letters. 37: 136-138. DOI: 10.1063/1.91792  1
1980 Coleman JJ, Dapkus PD, Vojak BA, Laidig WD, Holonyak N, Hess K. Induced phonon-sideband laser operation of large-quantum-well Al xGa1-xAs-GaAs heterostructures (Lz ∼200-500 Å) Applied Physics Letters. 37: 15-17. DOI: 10.1063/1.91683  1
1980 Yang JJJ, Dapkus PD, Dupuis RD, Yingling RD. Electrical properties of polycrystalline GaAs films Journal of Applied Physics. 51: 3794-3800. DOI: 10.1063/1.328117  1
1980 Hess K, Holonyak N, Laidig WD, Vojak BA, Coleman JJ, Dapkus PD. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures Solid State Communications. 34: 749-752. DOI: 10.1016/0038-1098(80)90906-0  1
1979 Dupuis RD, Kolbas RM, Dapkus PD, Holonyak N. Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition Ieee Journal of Quantum Electronics. 15: 756-761. DOI: 10.1109/JQE.1979.1070091  1
1979 Dupuis RD, Dapkus PD, Holonyak N, Kolbas RM. Continuous room-temperature multiple-quantum-well AlxGa 1-xAs-GaAs injection lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 35: 487-489. DOI: 10.1063/1.91206  1
1979 Dupuis RD, Dapkus PD, Garner CM, Su CY, Spicer WE. Abrupt Ga1-xAlxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor deposition Applied Physics Letters. 34: 335-337. DOI: 10.1063/1.90778  1
1979 Dupuis RD, Moudy LA, Dapkus PD. PREPARATION AND PROPERTIES OF Ga//1//-//xAl//xAs-GaAs HETEROJUNCTIONS GROWN BY METALLORGANIC CHEMICAL VAPOUR DEPOSITION Institute of Physics Conference Series. 1-9.  1
1978 Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. MP-B1 Photopumped MO-CVD Quantum-Well Al<inf>x</inf>Ga<inf>1−x</inf>As GaAs-AlxGa<inf>1−x</inf>As Heterostructure Lasers (x = 0.4–0.6, Lz ⩽ 200 Å T = 4.2–300 K) Ieee Transactions On Electron Devices. 25: 1342. DOI: 10.1109/T-ED.1978.19293  0.68
1978 Dupuis RD, Dapkus PD. MP-B2 Room-Temperature Operation of Distributed-Bragg-Confinement Ga<inf>1-x</inf>Al<inf>x</inf>As-GaAs Lasers Grown by Metalorganic Chemical Vapor Deposition Ieee Transactions On Electron Devices. 25: 1342-1343. DOI: 10.1109/T-ED.1978.19292  0.68
1978 Dupuis RD, Dapkus PD. Single-longitudinal-mode cw room-temperature Ga1-xAl xAs-GaAs channel-guide lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 33: 724-726. DOI: 10.1063/1.90516  1
1978 Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. Room-temperature continuous operation of photopumped MO-CVD Al xGa1-xAs-GaAs-AlxGa1-xAs quantum-well lasers Applied Physics Letters. 33: 73-75. DOI: 10.1063/1.90150  1
1978 Dupuis RD, Dapkus PD. Room-temperature operation of distributed-Bragg-confinement Ga 1-xAlxAs-GaAs lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 33: 68-69. DOI: 10.1063/1.90147  1
1978 Dupuis RD, Dapkus PD. Very low threshold Ga(1-x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 32: 473-475. DOI: 10.1063/1.90090  1
1978 Dupuis RD, Dapkus PD. Continuous room-temperature operation of Ga(1-x)Al xAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 32: 406-407. DOI: 10.1063/1.90085  1
1978 Dupuis RD, Dapkus PD, Kolbas RM, Holonyak N. Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) Solid State Communications. 27: 531-533. DOI: 10.1016/0038-1098(78)90388-5  1
1978 Dupuis RD, Dapkus PD. ROOM-TEMPERATURE Ga//(//1// minus //x//)Al//xAs-GaAs DOUBLE HETEROSTRUCTURE LASERS GROWN BY CHEMICAL VAPOR DEPOSITION 1
1977 Dupuis RD, Dapkus PD, Yingling RD, Moudy LA. IIIb-4 High-Efficiency GaAlAs/GaAs Heterostructure Solar Cells Grown by Metalorganic Chemical Vapor Deposition Ieee Transactions On Electron Devices. 24: 1203-1204. DOI: 10.1109/T-ED.1977.18941  0.68
1977 Dupuis RD, Dapkus PD. IIa-9 Room-Temperature Operation of Ga<inf>(1−x)</inf>Al<inf>x</inf>As/GaAs Double Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition (Late paper) Ieee Transactions On Electron Devices. 24: 1195-1196. DOI: 10.1109/T-ED.1977.18921  0.68
1977 Dupuis RD, Dapkus PD. Room-temperature operation of Ga(1-x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 31: 466-468. DOI: 10.1063/1.89743  1
1977 Dupuis RD, Dapkus PD, Yingling RD, Moudy LA. High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition Applied Physics Letters. 31: 201-203. DOI: 10.1063/1.89647  1
1977 Dupuis RD, Dapkus PD. Ga(1-x)AlxAs/Ga(1-y)AlyAs double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 31: 839-841. DOI: 10.1063/1.89569  1
1976 Henry CH, Dapkus PD. Deep-level changes associated with the degradation of gallium phosphide red-light-emitting diodes Journal of Applied Physics. 47: 4067-4072. DOI: 10.1063/1.323237  1
1976 Dapkus PD, Henry CH. Degradation of bulk luminescence in GaP : Zn,O induced by laser excitation Journal of Applied Physics. 47: 4061-4066. DOI: 10.1063/1.323236  1
1975 Lorimor OG, Haszko SE, Dapkus PD. Observations on Si Contamination in GaP LPE Journal of the Electrochemical Society. 122: 1230-1233. DOI: 10.1149/1.2134431  1
1975 Lorimor OG, Dapkus PD, Hackett WH. Very High Efficiency GaP Green Light Emitting Diodes Journal of the Electrochemical Society. 122: 407-412. DOI: 10.1149/1.2134224  1
1975 Shah J, Leheny RF, Dapkus PD. Novel technique for measuring nitrogen profiles in GaP:N Journal of Applied Physics. 46: 5244-5246. DOI: 10.1063/1.321582  1
1974 Bachrach RZ, Dapkus PD, Lorimor OG. Room-temperature deep-state emission spectra, radiative efficiency, and lifetime of some GaP:Te,N crystals Journal of Applied Physics. 45: 4971-4973. DOI: 10.1063/1.1663165  1
1974 Dapkus PD, Weick WW, Dixon RW. Laser-machined GaP monolithic displays Applied Physics Letters. 24: 292-294. DOI: 10.1063/1.1655188  1
1973 Dapkus PD, Weick WW, Dixon RW. LASER MACHINED GaP MONOLITHIC DISPLAYS . 11.  1
1972 Jayson JS, Bachrach RZ, Dapkus PD, Schumaker NE. Evaluation of the Zn-O complex and oxygen-donor electron-capture cross sections in p-Type GaP: Limits on the quantum efficiency of red-emitting (Zn,O)-doped material Physical Review B. 6: 2357-2372. DOI: 10.1103/PhysRevB.6.2357  1
1971 Scifres DR, Holonyak N, Dapkus PD, Burnham RD. GaAs-pumped GaAs lasers and the behavior of band tails Journal of Applied Physics. 42: 896-897. DOI: 10.1063/1.1660129  1
1970 Keune DL, Holonyak N, Dapkus PD, Burnham RD. Stimulated emission in lossy semiconductor laser modes Journal of Applied Physics. 41: 2725-2727. DOI: 10.1063/1.1659287  1
1970 Dapkus PD, Holonyak N, Keune DL, Burnham RD. Near-bandgap, narrow-spectrum, low-loss, volume-excited gaas laser (77°k) with time-uniform output Journal of Applied Physics. 41: 5215-5217. DOI: 10.1063/1.1658649  1
1970 Keune DL, Holonyak N, Dapkus PD, Burnham RD. Spontaneous and stimulated carrier lifetime and the spectral output of CdSe (77°K) Applied Physics Letters. 17: 42-45. DOI: 10.1063/1.1653246  1
1970 Dapkus PD, Holonyak N, Burnham RD, Keune DL. Direct observation of a dynamic burstein shift in a GaAs:Ge platelet laser Applied Physics Letters. 16: 93-95. DOI: 10.1063/1.1653134  1
1970 Burnham RD, Dapkus PD, Holonyak N, Keune DL, Zwicker HR. GaAs junction lasers containing the amphoteric dopants Ge and Si Solid State Electronics. 13: 199-205. DOI: 10.1016/0038-1101(70)90052-3  1
1969 Keune DL, Rossi JA, Holonyak N, Dapkus PD. Time Behavior of Laser Modes in GaAs Platelet Lasers Journal of Applied Physics. 40: 1934-1935. DOI: 10.1063/1.1657869  1
1969 Rossi JA, Holonyak N, Dapkus PD, McNeely JB, Williams FV. Laser recombination transition in p-type GaAs Applied Physics Letters. 15: 109-110. DOI: 10.1063/1.1652924  1
1969 Burnham RD, Dapkus PD, Holonyak N, Rossi JA. Laser transition to band edge or to impurity states in GaAs:Ge Applied Physics Letters. 14: 190-192. DOI: 10.1063/1.1652769  1
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