Peter M. Asbeck - Publications

Affiliations: 
Electrical Engineering (Elec Circ and Sys) and Cog Sci University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering

233 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Liu Y, Liu G, Asbeck PM. High-Order Modulation Transmission Through Frequency Quadrupler Using Digital Predistortion Ieee Transactions On Microwave Theory and Techniques. DOI: 10.1109/TMTT.2016.2561276  1
2016 Nakatani T, Kimball DF, Asbeck PM. Techniques for power dynamic range and back-off efficiency improvement in CMOS digitally controlled polar transmitters Ieee Transactions On Microwave Theory and Techniques. 64: 550-561. DOI: 10.1109/TMTT.2015.2510651  1
2016 Gheidi H, Asbeck PM. An improved algorithm for waveform generation for digitally-driven switching-mode power amplifiers Ieee Radio and Wireless Symposium, Rws. 2016: 187-189. DOI: 10.1109/RWS.2016.7444400  1
2016 Liu Y, Yoo CS, Fairbanks J, Yan J, Kimball D, Asbeck P. A 53% PAE envelope tracking GaN power amplifier for 20MHz bandwidth LTE signals at 880MHz Pawr 2016 - Proceedings of the 2016 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 30-32. DOI: 10.1109/PAWR.2016.7440155  1
2016 Diddi V, Gheidi H, Buckwalter J, Asbeck P. High-power, high-efficiency digital polar doherty power amplifier for cellular applications in SOI CMOS Pawr 2016 - Proceedings of the 2016 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 18-20. DOI: 10.1109/PAWR.2016.7440131  1
2016 Asbeck P, Popovic Z. ET Comes of Age: Envelope Tracking for Higher-Efficiency Power Amplifiers Ieee Microwave Magazine. 17: 16-25. DOI: 10.1109/MMM.2015.2505699  1
2016 Gu S, Min J, Taur Y, Asbeck PM. Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz Solid-State Electronics. 118: 18-25. DOI: 10.1016/j.sse.2016.01.001  1
2015 Yoo CS, Liu Y, Fairbanks J, Asbeck P, Theilmann P, Kimball D. High efficiency multi-band envelope tracking power amplifier with tunable output frequency bands 2015 Ieee 16th Annual Wireless and Microwave Technology Conference, Wamicon 2015. DOI: 10.1109/WAMICON.2015.7120372  1
2015 Dabag HT, Hanafi B, Gürbüz OD, Rebeiz GM, Buckwalter JF, Asbeck PM. Transmission of Signals With Complex Constellations Using Millimeter-Wave Spatially Power-Combined CMOS Power Amplifiers and Digital Predistortion Ieee Transactions On Microwave Theory and Techniques. 63: 2364-2374. DOI: 10.1109/TMTT.2015.2428693  1
2015 Hanafi B, Gürbüz O, Dabag H, Buckwalter JF, Rebeiz G, Asbeck P. Q-band spatially combined power amplifier arrays in 45-nm CMOS SOI Ieee Transactions On Microwave Theory and Techniques. 63: 1937-1950. DOI: 10.1109/TMTT.2015.2424215  1
2015 Liu Y, Yan JJ, Asbeck PM. Concurrent Dual-Band Digital Predistortion With a Single Feedback Loop Ieee Transactions On Microwave Theory and Techniques. DOI: 10.1109/TMTT.2015.2417158  1
2015 Farsi S, Gheidi H, Dabag HT, Gudem PS, Schreurs D, Asbeck PM. Modeling of deterministic output emissions of power amplifiers into adjacent receive bands Ieee Transactions On Microwave Theory and Techniques. 63: 1250-1262. DOI: 10.1109/TMTT.2015.2407881  1
2015 Liu Y, Liu G, Asbeck PM. Frequency quadrupling transmitter architecture with digital predistortion for high-order modulation signal transmission Ieee Radio and Wireless Symposium, Rws. 2015: 215-217. DOI: 10.1109/RWS.2015.7129771  1
2015 Gheidi H, Dabag HT, Liu Y, Asbeck PM, Gudem P. Digital cancellation technique to mitigate receiver desensitization in cellular handsets operating in carrier aggregation mode with multiple uplinks and multiple downlinks Ieee Radio and Wireless Symposium, Rws. 2015: 221-224. DOI: 10.1109/RWS.2015.7129754  1
2015 Gheidi H, Farsi S, Liu Y, Dabag H, Gudem P, Asbeck PM. Digital signal injection technique for cancellation of receive-band spurious emissions in FDD cellular transmitters 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7167088  1
2015 Wu PY, Liu Y, Hanafi B, Dabag H, Asbeck P, Buckwalter J. A 45-GHz Si/SiGe 256-QAM transmitter with digital predistortion 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7166824  1
2015 Asbeck PM, Lee K, Min J. Projected performance of heterostructure tunneling FETs in low power microwave and mm-wave applications Ieee Journal of the Electron Devices Society. 3: 122-134. DOI: 10.1109/JEDS.2015.2416320  1
2015 Palmer WD, Abdomerovic I, Asbeck PM, Larocca T, Raman S. Advancing silicon mm-wave transmitter ICs for satellite communications Ieee Mtt-S International Microwave and Rf Conference 2014, Imarc 2014 - Collocated With Intemational Symposium On Microwaves, Ism 2014. 49-52. DOI: 10.1109/IMaRC.2014.7038967  1
2015 Diddi V, Gheidi H, Liu Y, Buckwalter J, Asbeck P. A Watt-Class, High-Efficiency, Digitally-Modulated Polar Power Amplifier in SOI CMOS 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314484  1
2015 Jayamon JA, Buckwalter JF, Asbeck PM. 28 GHz >mW CMOS Power Amplifier Using Multigate-Cell Design 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314460  1
2014 Liu Y, Yan JJ, Dabag HT, Asbeck PM. Novel technique for wideband digital predistortion of power amplifiers with an under-sampling ADC Ieee Transactions On Microwave Theory and Techniques. 62: 2604-2617. DOI: 10.1109/TMTT.2014.2360398  1
2014 Kheirkhahi A, Yan JJ, Asbeck PM, Larson LE. Improved envelope injection and termination (EIT) RF power amplifier with envelope equalization for mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 62: 343-351. DOI: 10.1109/TMTT.2013.2295552  1
2014 Jayamon J, Gurbuz O, Hanafi B, Agah A, Buckwalter J, Rebeiz G, Asbeck P. Spatially power-combined W-band power amplifier using stacked CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 151-154. DOI: 10.1109/RFIC.2014.6851683  1
2014 Nakatani T, Gheidi H, Leung VW, Kimball DF, Asbeck PM. Signal generation algorithm for digital polar transmitters with reduced receive band noise Pawr 2014 - Proceedings: 2014 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 70-72. DOI: 10.1109/PAWR.2014.6825738  1
2014 Hanafi B, Gurbuz O, Dabag H, Pornpromlikit S, Rebeiz G, Asbeck P. A CMOS 45 GHz power amplifier with output power > 600 mW using spatial power combining Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848406  1
2014 Agah A, Jayamon JA, Asbeck PM, Larson LE, Buckwalter JF. Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS Ieee Journal of Solid-State Circuits. 49: 1148-1157. DOI: 10.1109/JSSC.2014.2308292  1
2013 Shinjo S, Hong YP, Gheidi H, Kimball DF, Asbeck PM. High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications Wisnet 2013 - Proceedings: 2013 Ieee Topical Conference On Wireless Sensors and Sensor Networks - 2013 Ieee Radio and Wireless Week, Rww 2013. 13-15. DOI: 10.1109/WiSNet.2013.6488618  1
2013 Dabag HT, Gheidi H, Farsi S, Gudem P, Asbeck PM. All-digital cancellation technique to mitigate receiver desensitization in uplink carrier aggregation in cellular handsets Ieee Transactions On Microwave Theory and Techniques. 61: 4754-4765. DOI: 10.1109/TMTT.2013.2287857  1
2013 Dabag HT, Hanafi B, Golcuk F, Agah A, Buckwalter JF, Asbeck PM. Analysis and design of stacked-FET millimeter-wave power amplifiers Ieee Transactions On Microwave Theory and Techniques. 61: 1543-1556. DOI: 10.1109/TMTT.2013.2247698  1
2013 Kheirkhahi A, Yan JJ, Asbeck PM, Larson LE. Rf power amplifier efficiency enhancement by envelope injection and termination for mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 61: 878-888. DOI: 10.1109/TMTT.2012.2234475  1
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS 2013 Ieee 13th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2013 - Rww 2013. 156-158. DOI: 10.1109/SiRF.2013.6489464  1
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS Ieee Radio and Wireless Symposium, Rws. 256-258. DOI: 10.1109/RWS.2013.6486706  1
2013 Hong YP, Mukai K, Gheidi H, Shinjo S, Asbeck PM. High efficiency GaN switching converter IC with bootstrap driver for envelope tracking applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 353-356. DOI: 10.1109/RFIC.2013.6569602  1
2013 Agah A, Wang W, Asbeck P, Larson L, Buckwalter J. A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm P sat and 16% PAE in 45-nm SOI CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 249-252. DOI: 10.1109/RFIC.2013.6569574  1
2013 Yan JJ, Hong YP, Shinjo S, Mukai K, Asbeck PM. Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697741  1
2013 Dabag HT, Gheidi H, Gudem P, Asbeck PM. All-digital cancellation technique to mitigate self-jamming in uplink carrier aggregation in cellular handsets Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697664  1
2013 Agah A, Jayamon J, Asbeck P, Buckwalter J, Larson L. A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697504  1
2013 Moon JS, Seo HC, Stratan F, Antcliffe M, Schmitz A, Ross RS, Kiselev AA, Wheeler VD, Nyakiti LO, Gaskill DK, Lee KM, Asbeck PM. Lateral graphene heterostructure field-effect transistor Ieee Electron Device Letters. 34: 1190-1192. DOI: 10.1109/LED.2013.2270368  1
2013 Agah A, Dabag HT, Hanafi B, Asbeck PM, Buckwalter JF, Larson LE. Active millimeter-wave phase-shift doherty power amplifier in 45-nm SOI CMOS Ieee Journal of Solid-State Circuits. 48: 2338-2350. DOI: 10.1109/JSSC.2013.2269854  1
2013 Balteanu A, Sarkas I, Dacquay E, Tomkins A, Rebeiz GM, Asbeck PM, Voinigescu SP. A 2-bit, 24 dBm, millimeter-wave SOI CMOS power-DAC cell for watt-level high-efficiency, fully digital m-ary QAM transmitters Ieee Journal of Solid-State Circuits. 48: 1126-1137. DOI: 10.1109/JSSC.2013.2252752  1
2013 Hassan M, Asbeck PM, Larson LE. A CMOS dual-switching power-supply modulator with 8% efficiency improvement for 20MHz LTE Envelope Tracking RF power amplifiers Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 56: 366-367. DOI: 10.1109/ISSCC.2013.6487772  1
2013 Nakatani T, Kimball DF, Asbeck PM. Multiband and wide dynamic range digital polar transmitter using current-mode Class-D CMOS power amplifier Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659240  1
2013 Levy CS, Asbeck PM, Buckwalter JF. A CMOS SOI stacked shunt switch with Sub-500ps time constant and 19-Vpp breakdown Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659196  1
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS Biowireless 2013 - Proceedings: 2013 Ieee Topical Conference On Biomedical Wireless Technologies, Networks, and Sensing Systems - 2013 Ieee Radio and Wireless Week, Rww 2013. 79-81. DOI: 10.1109/BioWireleSS.2013.6613681  1
2013 Yan JJ, Yoo CS, Trask EM, Kim D, Asbeck PM. Effect of signal PAPR on efficiency of envelope tracking power amplifiers Asia-Pacific Microwave Conference Proceedings, Apmc. 860-862. DOI: 10.1109/APMC.2013.6694958  1
2013 Nakatani T, Kimball DF, Larson LE, Asbeck PM. 0.7-1.8 GHz multiband digital polar transmitter using watt-class current-mode class-D CMOS power amplifier and digital envelope modulation technique for reduced spurious emissions International Journal of Microwave and Wireless Technologies. 5: 271-284. DOI: 10.1017/S175907871300041X  1
2013 Yan JJ, Draxler P, Presti CD, Kimball DF, Asbeck PM. Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications International Journal of Microwave and Wireless Technologies. 5: 171-177. DOI: 10.1017/S1759078713000147  1
2012 Draxler PJ, Yan JJ, Kimball DF, Asbeck PM. Digital predistortion for envelope tracking power amplifiers 2012 Ieee 13th Annual Wireless and Microwave Technology Conference, Wamicon 2012. DOI: 10.1109/WAMICON.2012.6208474  1
2012 Hassan M, Larson LE, Leung VW, Kimball DF, Asbeck PM. A wideband CMOS/GaAs HBT envelope tracking power amplifier for 4G LTE mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 60: 1321-1330. DOI: 10.1109/TMTT.2012.2187537  1
2012 Presti CD, Kimball DF, Asbeck PM. Closed-loop digital predistortion system with fast real-time adaptation applied to a handset WCDMA PA module Ieee Transactions On Microwave Theory and Techniques. 60: 604-618. DOI: 10.1109/TMTT.2011.2181860  1
2012 Chen HP, Yuan Y, Yu B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. Interface-State Modeling of Al 2O 3-InGaAs MOS From Depletion to Inversion Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2012.2205255  1
2012 Theilmann PT, Presti CD, Kelly DJ, Asbeck PM. A μ W complementary bridge rectifier with near zero turn-on voltage in SOS CMOS for wireless power supplies Ieee Transactions On Circuits and Systems I: Regular Papers. 59: 2111-2124. DOI: 10.1109/TCSI.2012.2185293  1
2012 Hassan M, Larson LE, Leung VW, Asbeck PM. Effect of envelope amplifier nonlinearities on the output spectrum of Envelope Tracking Power Amplifiers 2012 Ieee 12th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2012 - Digest of Papers. 187-190. DOI: 10.1109/SiRF.2012.6160129  1
2012 Agah A, Hanafi B, Dabag H, Asbeck P, Larson L, Buckwalter J. A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259632  1
2012 Draxler PJ, Kimball DF, Asbeck PM. Nonlinearity consideration of GaN based envelope tracking power amplifiers Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259364  1
2012 Dabag HT, Asbeck PM, Buckwalter JF. Linear operation of high-power millimeter-wave stacked-FET PAs in CMOS SOI Midwest Symposium On Circuits and Systems. 686-689. DOI: 10.1109/MWSCAS.2012.6292113  1
2012 Yan JJ, Hsia C, Kimball DF, Asbeck PM. Design of a 4-W envelope tracking power amplifier with more than one octave carrier bandwidth Ieee Journal of Solid-State Circuits. 47: 2298-2308. DOI: 10.1109/JSSC.2012.2204927  1
2012 Nakatani T, Rode J, Kimball DF, Larson LE, Asbeck PM. Digitally-controlled polar transmitter using a watt-class current-mode class-D CMOS power amplifier and guanella reverse balun for handset applications Ieee Journal of Solid-State Circuits. 47: 1104-1112. DOI: 10.1109/JSSC.2012.2185554  1
2012 Hassan M, Larson LE, Leung VW, Asbeck PM. A combined series-parallel hybrid envelope amplifier for envelope tracking mobile terminal RF power amplifier applications Ieee Journal of Solid-State Circuits. 47: 1185-1198. DOI: 10.1109/JSSC.2012.2184639  1
2012 Lu W, Wang L, Gu S, Asbeck PM, Yu PKL. Critical design considerations for GaN-based microwave power varactors 2012 Ieee International Conference On Electron Devices and Solid State Circuit, Edssc 2012. DOI: 10.1109/EDSSC.2012.6482881  1
2012 Asbeck P, Larson L, Kimball D, Buckwalter J. CMOS handset power amplifiers: Directions for the future Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330561  1
2012 Nakatani T, Kimball DF, Larson LE, Asbeck PM. 0.7-1.8 GHz digital polar transmitter using a watt-class CMOS power amplifier and digital pulse width modulation with spurious signal reduction European Microwave Week 2012: "Space For Microwaves", Eumw 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, Eumic 2012. 349-352.  1
2012 Theilmann PT, Tassoudji MA, Teague EH, Kimball DF, Asbeck PM. Computationally efficient model for uwb signal attenuation due to propagation in tissue for biomedical implants Progress in Electromagnetics Research B. 1-22.  1
2011 Nakatani T, Rode J, Kimball DF, Larson LE, Asbeck PM. Digital polar transmitter using a watt-class current-mode class-D CMOS power amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940654  1
2011 Hassan M, Kwak M, Leung VW, Hsia C, Yan JJ, Kimball DF, Larson LE, Asbeck PM. High efficiency envelope tracking power amplifier with very low quiescent power for 20 MHz LTE Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940618  1
2011 Hsia C, Kimball DF, Asbeck PM. Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs 2011 Ieee Radio and Wireless Week, Rww 2011 - 2011 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications, Pawr 2011. 69-72. DOI: 10.1109/PAWR.2011.5725388  1
2011 Kheirkhahi A, Asbeck PM, Larson LE. Enhanced class-A/AB mobile terminal power amplifier efficiency by input envelope injection and "self" envelope tracking Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972901  1
2011 Kim WY, Rode J, Scuderi A, Son HS, Park CS, Asbeck PM. An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972623  1
2011 Jeong J, Pornpromlikit S, Scuderi A, Presti C, Asbeck P. High power digitally-controlled SOI CMOS attenuator with wide attenuation range Ieee Microwave and Wireless Components Letters. 21: 433-435. DOI: 10.1109/LMWC.2011.2160160  1
2011 Yuan Y, Wang L, Yu B, Shin B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed model for border traps in Al2O3 - InGaAs MOS devices Ieee Electron Device Letters. 32: 485-487. DOI: 10.1109/LED.2011.2105241  1
2011 Lee KM, Ohoka A, Asbeck PM. Charge transfer region at the edge of metal contacts on graphene and its impact on contact resistance measurement 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135256  1
2011 Yan JJ, Hsia C, Kimball DF, Asbeck PM. GaN envelope tracking power amplifier with more than one octave carrier bandwidth Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062485  1
2011 Pornpromlikit S, Dabag HT, Hanafi B, Kim J, Larson LE, Buckwalter JF, Asbeck PM. A Q-band amplifier implemented with stacked 45-nm CMOS FETs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062465  1
2011 Dabag HT, Kim J, Larson LE, Buckwalter JF, Asbeck PM. A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 25-28. DOI: 10.1109/BCTM.2011.6082742  1
2010 Park SH, Theilmann PT, Asbeck PM, Bandaru PR. Enhanced electromagnetic interference shielding through the use of functionalized carbon-nanotube-reactive polymer composites Ieee Transactions On Nanotechnology. 9: 464-469. DOI: 10.1109/TNANO.2009.2032656  1
2010 Hong YP, Kimball DF, Asbeck PM, Yook JG, Larson LE. Single-ended and differential radial power combiners implemented with a compact broadband probe Ieee Transactions On Microwave Theory and Techniques. 58: 1565-1572. DOI: 10.1109/TMTT.2010.2049165  1
2010 Jeong J, Kimball DF, Kwak M, Draxler P, Asbeck PM. Envelope tracking power amplifiers with reduced peak-to-average power ratio RF input signals 2010 Ieee Radio and Wireless Symposium, Rww 2010 - Paper Digest. 112-115. DOI: 10.1109/RWS.2010.5434221  1
2010 Theilmann PT, Presti CD, Kelly D, Asbeck PM. Near zero turn-on voltage high-efficiency UHF RFID rectifier in silicon-on-sapphire CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 105-108. DOI: 10.1109/RFIC.2010.5477409  1
2010 Hong YP, Kimba DF, Yook JG, Asbeck PM, Larson LE. Switch-controlled multi-octave bandwidth radial power divider/combiner Ieee Mtt-S International Microwave Symposium Digest. 932-935. DOI: 10.1109/MWSYM.2010.5518214  1
2010 Presti CD, Metzger AG, Banbrook HM, Zampardi PJ, Asbeck PM. Efficiency improvement of a handset WCDMA PA module using Adaptive Digital Predistortion Ieee Mtt-S International Microwave Symposium Digest. 804-807. DOI: 10.1109/MWSYM.2010.5517640  1
2010 Hsia C, Kimball DF, Lanfranco S, Asbeck PM. Wideband high efficiency digitally-assisted envelope amplifier with dual switching stages for radio base-station envelope tracking power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 672-675. DOI: 10.1109/MWSYM.2010.5514940  1
2010 Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on si-face sic wafers with a peak transconductance of 600 mS/mm Ieee Electron Device Letters. 31: 260-262. DOI: 10.1109/LED.2010.2040132  1
2010 Kim EJ, Wang L, Asbeck PM, Saraswat KC, McIntyre PC. Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96. DOI: 10.1063/1.3281027  1
2010 Wang L, Asbeck PM, Taur Y. Self-consistent 1-D Schrödinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Solid-State Electronics. 54: 1257-1262. DOI: 10.1016/j.sse.2010.06.018  1
2010 Lee KM, Wang L, Asbeck PM, Moon JS. Analysis of resistance asymmetry due to p-n junctions in graphene FETs Materials Research Society Symposium Proceedings. 1259: 23-28.  1
2010 Asbeck PM, Wang L, Gu S, Taur Y, Yu ET. Tunneling MOSFETs based on III-V staggered heterojunctions Materials Research Society Symposium Proceedings. 1252: 3-9.  1
2009 Theilmann PT, Asbeck PM. An analytical model for inductively coupled implantable biomedical devices with ferrite rods. Ieee Transactions On Biomedical Circuits and Systems. 3: 43-52. PMID 23853162 DOI: 10.1109/TBCAS.2008.2004776  1
2009 Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM. A 25-dBm high-efficiency digitally-modulated SOI CMOS power amplifier for multi-standard RF polar transmitters Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 157-160. DOI: 10.1109/RFIC.2009.5135512  1
2009 Jeong J, Kimball DF, Kwak M, Hsia C, Draxler P, Asbeck PM. Wideband envelope tracking power amplifier with reduced bandwidth power supply waveform Ieee Mtt-S International Microwave Symposium Digest. 1381-1384. DOI: 10.1109/MWSYM.2009.5165963  1
2009 Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM. A 33-dBm 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier Ieee Mtt-S International Microwave Symposium Digest. 533-536. DOI: 10.1109/MWSYM.2009.5165751  1
2009 Jeong J, Kimball DF, Kwak M, Draxler P, Hsia C, Steinbeiser C, Landon T, Krutko O, Larson LE, Asbeck PM. High-efficiency WCDMA envelope tracking base-station amplifier implemented with GaAs HVHBTs Ieee Journal of Solid-State Circuits. 44: 2629-2639. DOI: 10.1109/JSSC.2009.2026845  1
2009 Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006  1
2009 Farcich NJ, Asbeck PM. De-embedding parasitic components from propagation constant calculations Aeu - International Journal of Electronics and Communications. 63: 287-293. DOI: 10.1016/j.aeue.2008.01.011  1
2008 Farcich NJ, Salonen J, Asbeck PM. Single-length method used to determine the dielectric constant of polydimethylsiloxane Ieee Transactions On Microwave Theory and Techniques. 56: 2963-2971. DOI: 10.1109/TMTT.2008.2007182  1
2008 Yu B, Wang L, Yuan Y, Asbeck PM, Taur Y. Scaling of nanowire transistors Ieee Transactions On Electron Devices. 55: 2846-2858. DOI: 10.1109/TED.2008.2005163  1
2008 O'Sullivan T, Urteaga M, Pierson R, Asbeck PM. InP HBT millimeter-wave power amplifier implemented using planar radial power combiner Ieee Mtt-S International Microwave Symposium Digest. 293-296. DOI: 10.1109/MWSYM.2008.4633161  1
2008 Draxler PJ, Zhu A, Yan JJ, Kolinko P, Kimball DF, Asbeck PM. Quantifying distortion of RF power amplifiers for estimation of predistorter performance Ieee Mtt-S International Microwave Symposium Digest. 931-934. DOI: 10.1109/MWSYM.2008.4632986  1
2008 Rode J, Hung TP, Asbeck PM. An all-digital CMOS 915 MHz ISM band 802.15.4 / ZigBee transmitter with a noise spreading direct quantization algorithm Ieee Mtt-S International Microwave Symposium Digest. 755-758. DOI: 10.1109/MWSYM.2008.4632942  1
2008 Rodwell MJW, Wistey M, Singisetti U, Burek G, Gossard A, Stemmer S, Engel-Herbert R, Hwang Y, Zheng Y, Van De Walle C, Asbeck P, Taur Y, Kummel A, Yu B, Wang D, et al. Technology development & design for 22 nm InGaAs/InP-channel MOSFETs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703065  1
2008 Conway AM, Asbeck PM, Moon JS, Micovic M. Accurate thermal analysis of GaN HFETs Solid-State Electronics. 52: 637-643. DOI: 10.1016/j.sse.2007.10.049  1
2008 Yu ET, Asbeck PM. Local polarization effects in nitride heterostructures and devices Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 217-264. DOI: 10.1007/978-0-387-68319-5_5  1
2008 Farcich NJ, Asbeck PM. Soft-lithography defined coaxial-like transmission line with 2.5 dimensional features Microwave and Optical Technology Letters. 50: 2827-2830. DOI: 10.1002/mop.23798  1
2007 Hung TP, Rode J, Larson LE, Asbeck PM. Design of H-bridge class-D power amplifiers for digital pulse modulation transmitters Ieee Transactions On Microwave Theory and Techniques. 55: 2845-2855. DOI: 10.1109/TMTT.2007.909881  1
2007 Hung TP, Rode J, Larson LE, Asbeck PM. H-bridge class-D power amplifiers for digital pulse modulation transmitters Ieee Mtt-S International Microwave Symposium Digest. 1091-1094. DOI: 10.1109/MWSYM.2007.380283  1
2007 Conway AM, Asbeck PM. Virtual gate large signal model of GaN HFETs Ieee Mtt-S International Microwave Symposium Digest. 605-608. DOI: 10.1109/MWSYM.2007.379973  1
2007 Hung TP, Choi DK, Larson LE, Asbeck PM. CMOS outphasing class-D amplifier with Chireix combiner Ieee Microwave and Wireless Components Letters. 17: 619-621. DOI: 10.1109/LMWC.2007.901800  1
2007 Wang F, Kimball DF, Lie DY, Asbeck PM, Larson LE. A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier Ieee Journal of Solid-State Circuits. 42: 1271-1281. DOI: 10.1109/JSSC.2007.897170  1
2007 O'Sullivan T, Le M, Partyka P, Milano R, Asbeck PM. Design of a 70 GHz power amplifier using a digital InP HBT process Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 214-217. DOI: 10.1109/BIPOL.2007.4351872  1
2007 Draxler PJ, Asbeck PM. Statistical evaluation of finite length digital modulation sequences 2006 67th Arftg Microwave Measurements Conference - Measurements and Design of High Power Devices and Systems. 259-261. DOI: 10.1109/ARFTG.2006.4734401  1
2006 Asbeck PM, Qiao D. Adaptive power amplifiers for military and commercial communications Proceedings of Spie - the International Society For Optical Engineering. 6232. DOI: 10.1117/12.669447  1
2006 Li JC, Hitko DA, Sokolich M, Asbeck PM. Experimental method to thermally deembed pads from RTH measurements Ieee Transactions On Electron Devices. 53: 2540-2544. DOI: 10.1109/TED.2006.882270  1
2006 Zhao Y, Metzger A, Zampardi PJ, Iwamoto M, Asbeck PM. Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model Ieee Mtt-S International Microwave Symposium Digest. 877-880. DOI: 10.1109/MWSYM.2006.249832  1
2006 Rode J, Swaminathan A, Galton I, Asbeck PM. Fractional-N direct digital frequency synthesis with a 1-Bit output Ieee Mtt-S International Microwave Symposium Digest. 415-418. DOI: 10.1109/MWSYM.2006.249559  1
2006 Jinho J, Pornpromlikit S, Asbeck PM, Kelly D. A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs Ieee Microwave and Wireless Components Letters. 16: 684-686. DOI: 10.1109/LMWC.2006.885634  1
2006 Metzger AG, Asbeck PM. A nonlinear electronic equalizer implemented in InGaP/GaAs HBT technology for dispersion compensation of gigabit optical fiber links Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 145-148. DOI: 10.1109/CSICS.2006.319931  1
2006 Metzger AG, Asbeck PM. A 64-bit high-speed read-write look-up table memory implemented in GaAs HBT Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. DOI: 10.1109/BIPOL.2006.311162  1
2006 Wang L, Wang D, Asbeck PM. A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures Solid-State Electronics. 50: 1732-1739. DOI: 10.1016/j.sse.2006.09.013  1
2006 Li JC, Sokolich M, Hussain T, Asbeck PM. Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Solid-State Electronics. 50: 1440-1449. DOI: 10.1016/j.sse.2006.04.047  1
2006 Chung T, Limb J, Ryou JH, Lee W, Li P, Yoo D, Zhang XB, Shen SC, Dupuis RD, Keogh D, Asbeck P, Chukung B, Feng M, Zakharov D, Lilienthal-Weber Z. Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700. DOI: 10.1007/s11664-006-0123-z  1
2006 Farcich NJ, Asbeck PM. A three-dimensional transmission line with coplanar waveguide features Microwave and Optical Technology Letters. 48: 2189-2192. DOI: 10.1002/mop.21881  1
2006 Li MY, Deng JX, Larson LE, Asbeck PM. Nonideal effects of reconstruction filter and I/Q imbalance in digital predistortion Proceedings - 2006 Ieee Radio and Wireless Symposium. 2006: 259-262.  1
2005 Wittig JH, Ryan AF, Asbeck PM. A reusable microfluidic plate with alternate-choice architecture for assessing growth preference in tissue culture. Journal of Neuroscience Methods. 144: 79-89. PMID 15848242 DOI: 10.1016/j.jneumeth.2004.10.010  1
2005 Li MY, Galton I, Larson LE, Asbeck PM. Nonlinearity estimation and spectral regrowth prediction of power amplifiers using correlation techniques 2005 Ieee Annual Conference On Wireless and Microwave Technology, Wamicon 2005 - Conference Proceedings. 2005: 170-173. DOI: 10.1109/WAMIC.2005.1528410  1
2005 Deng J, Gudem PS, Larson LE, Asbeck PM. A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications Ieee Transactions On Microwave Theory and Techniques. 53: 529-537. DOI: 10.1109/TMTT.2004.840629  1
2005 O'Sullivan T, York RA, Noren B, Asbeck PM. Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters Ieee Transactions On Microwave Theory and Techniques. 53: 106-113. DOI: 10.1109/TMTT.2004.839900  1
2005 Draxler P, Deng J, Kimball D, Langmore I, Asbeck PM. Memory effect evaluation and predistortion of power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 1549-1552. DOI: 10.1109/MWSYM.2005.1516993  1
2005 Conway AM, Zhao Y, Asbeck PM, Micovic M, Moon J. Dynamic gate bias technique for improved linearity of GaN HFET power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 499-502. DOI: 10.1109/MWSYM.2005.1516639  1
2005 Deng J, Gudem P, Larson LE, Kimball D, Asbeck PM. A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 247-250. DOI: 10.1109/JSSC.2006.872735  1
2005 Keogh DM, Dupuis RD, Feng M, Raychaudhuri S, Asbeck PM. Improvement of III-N surfaces after inductively coupled plasma dry etch exposure Proceedings - Electrochemical Society. 354-360.  1
2005 Li JC, Hussain T, Hitko DA, Asbeck PM, Sokolich M. Characterization and modeling of thermal effects in sub-micron InP DHBTs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 65-68.  1
2004 Li JC, Keogh DM, Raychaudhuri S, Conway A, Qiao D, Asbeck PM. Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs International Journal of High Speed Electronics and Systems. 14: 825-830. DOI: 10.1142/S0129156404002909  1
2004 Welty RJ, Xin H, Tu CW, Asbeck PM. Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen Journal of Applied Physics. 95: 327-333. DOI: 10.1063/1.1631075  1
2004 Deng J, Gudem P, Larson LE, Asbeck PM. A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 361-364.  1
2004 Li MY, Galton I, Larson LE, Asbeck PM. Correlation techniques for estimation of amplifier nonlinearity Proceedings - 2004 Ieee Radio and Wireless Conference, Rawcon. 179-182.  1
2004 Hung TP, Metzger AG, Zampardi PJ, Iwamoto M, Asbeck PM. High efficiency current-mode class-D amplifier with integrated resonator Ieee Mtt-S International Microwave Symposium Digest. 3: 2035-2038.  1
2004 Tu CW, Hong YG, André R, Welty RJ, Asbeck PM. Bandgap engineering of GaInNP on GaAs(001) for electronic applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 631-635.  1
2003 Vaidyanathan M, Iwamoto M, Larson LE, Gudem PS, Asbeck PM. A theory of high-frequency distortion in bipolar transistors Ieee Transactions On Microwave Theory and Techniques. 51: 448-461. DOI: 10.1109/TMTT.2002.807821  1
2003 Welty RJ, Mochizuki K, Lutz CR, Welser RE, Asbeck PM. Design and performance of tunnel collector HBTs for microwave power amplifiers Ieee Transactions On Electron Devices. 50: 894-900. DOI: 10.1109/TED.2003.812088  1
2003 Rode J, Hinrichs J, Asbeck P. Transmitter architecture using digital generation of RF signals Proceedings - 2003 Ieee Radio and Wireless Conference, Rawcon 2003. 245-248. DOI: 10.1109/RAWCON.2003.1227938  1
2003 Finkelstein H, Asbeck PM, Esener S. Architecture and analysis of a self-assembled 3D array of carbon nanotubes and molecular memories Proceedings of the Ieee Conference On Nanotechnology. 1: 441-444. DOI: 10.1109/NANO.2003.1231813  1
2003 Li JC, Asbeck PM, Sokolich M, Hussain T, Hitko D, Fields C. Effects of device design on the thermal properties of InP-based HBTs Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 205-206. DOI: 10.1109/ISCS.2003.1239977  1
2003 Draxler P, Langmore I, Hung TP, Asbeck PM. Time domain characterization of power amplifiers with memory effects Ieee Mtt-S International Microwave Symposium Digest. 2: 803-806.  1
2003 Zhao Y, Iwamoto M, Larson LE, Asbeck PM. Doherty amplifier with DSP control to improve performance in CDMA operation Ieee Mtt-S International Microwave Symposium Digest. 2: 687-690.  1
2002 Zhang X, Larson LE, Asbeck PM, Langridge RA. Analysis of power recycling techniques for RF and microwave outphasing power amplifiers Ieee Transactions On Circuits and Systems Ii: Analog and Digital Signal Processing. 49: 312-320. DOI: 10.1109/TCSII.2002.801411  1
2002 Wang C, Larson LE, Asbeck PM. Improved design technique of a microwave class-E power amplifier with finite switching-on resistance Proceedings - Rawcon 2002: 2002 Ieee Radio and Wireless Conference. 241-244. DOI: 10.1109/RAWCON.2002.1030162  1
2002 Asbeck P, Galton I, Wang KC, Jensen JF, Oki AK, Chang CTM. Digital signal processing - Up to microwave frequencies Ieee Transactions On Microwave Theory and Techniques. 50: 900-909. DOI: 10.1109/22.989973  1
2002 Asbeck PM, Welty RJ, Tu CW, Xin HP, Welser RE. Heterojunction bipolar transistors implemented with GaInNAs materials Semiconductor Science and Technology. 17: 898-906. DOI: 10.1088/0268-1242/17/8/319  1
2002 Qiao D, Yu LS, Jia L, Asbeck PM, Lau SS, Haynes TE. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 80: 992-994. DOI: 10.1063/1.1447591  1
2002 Kim Y, Farcich NJ, Kim SC, Nam S, Asbeck PM. Size reduction of microstrip antenna by elevating centre of patch Electronics Letters. 38: 1163-1165. DOI: 10.1049/el:20020798  1
2002 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. GaAs/Ga0.89In0.11N0.02As0.98 /GaAs NpN double heterojunction bipolar transistor with low turn-on voltage Solid-State Electronics. 46: 1-5. DOI: 10.1016/S0038-1101(01)00315-X  1
2002 Kobayashi H, Asbeck PM. Active cancellation of switching noise for DC-DC converter-driven RF power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 3: 1647-1650.  1
2002 López-González JM, Keogh DM, Asbeck PM. An Ebers-Moll Model for Heterostructure Bipolar Transistors with Tunnel Junctions Proceedings Ieee Lester Eastman Conference On High Performance Devices. 240-244.  1
2002 Keyzer J, Uang R, Sugiyama Y, Iwamoto M, Galton I, Asbeck PM. Generation of RF pulsewidth modulated microwave signals using delta-sigma modulation Ieee Mtt-S International Microwave Symposium Digest. 1: 397-400.  1
2002 Asbeck PM, Kobayashi H, Iwamoto M, Hanington G, Nam S, Larson LE. Augmented behavioral characterization for modeling the nonlinear response of power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 1: 135-138.  1
2001 Zhang X, Larson LE, Asbeck PM, Nanawa P. Gain/phase imbalance-minimization techniques for LINC transmitters Ieee Transactions On Microwave Theory and Techniques. 49: 2507-2516. DOI: 10.1109/22.971643  1
2001 Kobayashi H, Hinrichs JM, Asbeck PM. Current-mode class-D power amplifiers for high-efficiency RF applications Ieee Transactions On Microwave Theory and Techniques. 49: 2480-2485. DOI: 10.1109/22.971639  1
2001 Iwamoto M, Williams A, Chen PF, Metzger AG, Larson LE, Asbeck PM. An extended Doherty amplifier with high efficiency over a wide power range Ieee Transactions On Microwave Theory and Techniques. 49: 2472-2479. DOI: 10.1109/22.971638  1
2001 Brar B, Sullivan GJ, Asbeck PM. Herb's bipolar transistors Ieee Transactions On Electron Devices. 48: 2473-2476. DOI: 10.1109/16.960370  1
2001 Zhang X, Larson LE, Asbeck PM. Calibration scheme for LINC transmitter Electronics Letters. 37: 317-318. DOI: 10.1049/el:20010209  1
2001 Kobayashi H, Hinrichs J, Asbeck PM. Current mode class-D power amplifiers for high efficiency RF applications Ieee Mtt-S International Microwave Symposium Digest. 2: 939-942.  1
2001 Wang C, Larson LE, Asbeck PM. A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 39-42.  1
2001 Zhang X, Nanawa P, Larson LE, Asbeck PM. A gain/phase imbalance minimization technique for LINC transmitter Ieee Mtt-S International Microwave Symposium Digest. 2: 801-804.  1
2001 Welty RJ, Mochizuki K, Lutz CR, Asbeck PM. Tunnel collector GaInP/GaAs HBTs for microwave power amplifiers Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 74-77.  1
2000 Asbeck PM, Larson LE. Synergistic design of DSP and power amplifiers for wireless communications Asia-Pacific Microwave Conference Proceedings, Apmc. 23. DOI: 10.1109/22.963154  1
2000 Mochizuki K, Welty RJ, Asbeck PM. GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics Electronics Letters. 36: 264-265. DOI: 10.1049/el:20000211  1
2000 Hsin YM, Asbeck PM. Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases Solid-State Electronics. 44: 587-592. DOI: 10.1016/S0038-1101(99)00294-4  1
2000 Asbeck PM, Larson LE. Synergistic design of DSP and power amplifiers for wireless communications Asia-Pacific Microwave Conference Proceedings, Apmc. 23.  1
2000 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. Design and characterization of GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Annual Device Research Conference Digest. 145-146.  1
2000 Dang X, Asbeck PM, Yu ET, Boutros KS, Redwing JM. Long time-constant trap effects in nitride heterostructure field effect transistors Materials Research Society Symposium - Proceedings. 622.  1
1999 Larson L, Asbeck P, Hanington G, Chen E, Jayamaran A, Langridge R, Zhang X. Device and circuit approaches for improved wireless communications transmitters Ieee Personal Communications. 6: 18-23. DOI: 10.1109/98.799616  1
1999 Hanington G, Chen PF, Asbeck PM, Larson LE. High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications Ieee Transactions On Microwave Theory and Techniques. 47: 1471-1476. DOI: 10.1109/22.780397  1
1999 Langridge R, Thornton T, Asbeck PM, Larson LE. A power re-use technique for improved efficiency of outphasing microwave power amplifiers Ieee Transactions On Microwave Theory and Techniques. 47: 1467-1470. DOI: 10.1109/22.780396  1
1999 Chen PF, Hsin YMT, Welty RJ, Asbeck PM, Pierson RL, Zampardi PJ, Ho WJ, Vincent Ho MC, Frank Chang M. Application of GalnP/GaAs DHBT's to power amplifiers for wireless communications Ieee Transactions On Microwave Theory and Techniques. 47: 1433-1438. DOI: 10.1109/22.780391  1
1999 Schuermeyer F, Zampardi PJ, Asbeck PM. Photoemission studies on heterostructure bipolar transistors Solid-State Electronics. 43: 1555-1560.  1
1999 Shi C, Asbeck PM, Yu ET. Piezoelectric polarization associated with dislocations in wurtzite GaN Applied Physics Letters. 74: 573-575.  1
1998 Hsin YM, Li NY, Tu CW, Asbeck PM. AlGaAs/GaAs HBTs with extrinsic base regrowth Journal of Crystal Growth. 188: 355-358.  1
1998 Hanington G, Chen PF, Radisic V, Itoh T, Asbeck PM. Microwave power amplifier efficiency improvement with a 10 MHz HBT dc-dc converter Ieee Mtt-S International Microwave Symposium Digest. 2: 589-592.  1
1998 Chang MF, Yang YF, Qian Y, Itoh T, Tu C, Asbeck PM. High efficiency and high linearity microwave power amplifiers based on ultra-high fmax selective buried sub-collector (SBSC) HBTs Proceedings - Ieee Military Communications Conference Milcom. 3: 704-707.  1
1997 Hanington G, Asbeck PM. Base resistance measurements in HBTs using base-emitter reverse bias breakdown Solid-State Electronics. 41: 669-671.  1
1997 Hsin YM, Li NY, Tu CW, Asbeck PM. In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications Materials Research Society Symposium - Proceedings. 448: 87-92.  1
1997 Li NY, Hsin YM, Asbeck PM, Tu CW. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic Journal of Crystal Growth. 175: 387-392.  1
1997 Park SH, Fu SL, Yu PKL, Asbeck PM. GaInP selective area epitaxy for heterojunction bipolar transistor applications Materials Research Society Symposium - Proceedings. 448: 253-258.  1
1996 Hanington G, Chang CE, Zampardi PJ, Asbeck PM. Thermal effects in HBT emitter resistance extraction Electronics Letters. 32: 1515-1516. DOI: 10.1049/el:19961017  1
1996 Hsin YM, Vu DP, Asbeck PM. Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases Electronics Letters. 32: 1323-1324.  1
1995 Ho MC, Johnson RA, Asbeck PM, Ho WJ, Chang MF. High-Performance Low-Base-Collector Capacitance AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Deep Ion Implantation Ieee Electron Device Letters. 16: 512-514. DOI: 10.1109/55.468284  1
1995 Knudsen KL, Poulton K, Corcoran JJ, Wang KC, Nubling RB, Pierson RL, Chang MCF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC Ieee Journal of Solid-State Circuits. 30: 1109-1118. DOI: 10.1109/4.466071  1
1995 Chin TP, Asbeck PM. Impact ionization coefficients in (100) GaInP Applied Physics Letters. 66: 3507-3509. DOI: 10.1063/1.113779  1
1995 Park SH, M. M, Yu PKL, Asbeck PM. Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling Journal of Electronic Materials. 24: 1381-1386. DOI: 10.1007/BF02655452  1
1994 Kwok CY, Sheng NH, Asbeck PM. 300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology Electronics Letters. 30: 759-760. DOI: 10.1049/el:19940532  1
1993 Asbeck PM, Wang KC, Chang FMC, Sullivan GJ, Cheung DT. GaAs-Based Heterojunction Bipolar Transistors for Very High Performance Electronic Circuits Proceedings of the Ieee. 81: 1709-1726. DOI: 10.1109/5.248960  1
1993 Chang CE, Brown ER, Asbeck PM, Wang KC. Analysis of Heterojunction Bipolar Transistor/Resonant Tunneling Diode Logic for Low-Power and High-speed Digital Applications Ieee Transactions On Electron Devices. 40: 685-691. DOI: 10.1109/16.202778  1
1993 Ho MC, Chin TP, Tu CW, Asbeck PM. Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy Journal of Applied Physics. 74: 2128-2130. DOI: 10.1063/1.354739  1
1993 Chang CE, Asbeck PM, Tran LT, Streit DC, Oki AK. Novel HBT structure for high ft at low current density Technical Digest - International Electron Devices Meeting. 795-798.  1
1992 Waldrop JR, Wang KC, Asbeck PM. Determination of Junction Temperature in AIGaAs/ GaAs Heterojunction Bipolar Transistors by Electrical Measurement Ieee Transactions On Electron Devices. 39: 1248-1250. DOI: 10.1109/16.129117  1
1991 Asbeck PM, Chang MF, Wang KC, Sullivan GJ, Higgins JA. GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application Conference On Solid State Devices and Materials. 71-73.  1
1990 Asbeck PM, Farley CW, Chang MF, Wang KC, Ho WJ. InP-based heterojunction bipolar transistors: Performance status and circuit applications Second International Conference On Indium Phosphide and Related Materials. 2-5.  1
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. A 20-GHz Frequency Divider Implemented with Heterojunction Bipolar Transistors Ieee Electron Device Letters. 8: 383-385. DOI: 10.1109/EDL.1987.26668  1
1987 Miller DL, Asbeck PM. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes Journal of Crystal Growth. 81: 368-372. DOI: 10.1016/0022-0248(87)90418-0  1
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. HIGH-SPEED CIRCUITS FOR LIGHTWAVE COMMUNICATION SYSTEMS IMPLEMENTED WITH (ALGA)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS . 142-145.  1
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. 4-BIT QUANTIZER IMPLEMENTED WITH ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 83-86.  1
1986 Sullivan GJ, Asbeck PM, Chang MF, Miller DL, Wang KC. IIIA-6 High-Frequency Performance of AlGaAs/InGaAs/GaAs Strained Layer Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 33: 1845-1846. DOI: 10.1109/T-ED.1986.22778  1
1986 Chang MF, Asbeck PM, Miller DL, Wang KC. GaAs/(GaA1)As Heterojunction Bipolar Transistors Using a Self-Aligned Substitutional Emitter Process Ieee Electron Device Letters. 7: 8-10. DOI: 10.1109/EDL.1986.26274  1
1986 Sullivan GJ, Asbeck PM, Chang MF, Miller DL, Wang KC. AlGaAs/InGaAs/GaAs STRAINED-LAYER HETEROJUNCTION BIPOLAR TRANSISTORS BY MOLECULAR BEAM EPITAXY Electronics Letters. 22: 419-421.  1
1986 Chang MF, Asbeck PM, Wang KC, Sullivan GJ, Miller DL. AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE Electronics Letters. 22: 1173-1174.  1
1986 Wang KC, Asbeck PM, Chang MF, Miller DL, Sullivan GJ. HIGH-SPEED MSI CURRENT-MODE LOGIC CIRCUITS IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 159-162.  1
1985 Chang MF, Asbeck PM, Miller DL, Wang KC. VA-7 Self-Aligned Substitutional Emitter Process for GaAs/(GaAl)As Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 32: 2547. DOI: 10.1109/T-ED.1985.22359  1
1985 Miller DL, Asbeck PM. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy Journal of Applied Physics. 57: 1816-1822. DOI: 10.1063/1.334409  1
1985 Agarwal KK, Thompson WJ, Asbeck PM. PHASE-NOISE BEHAVIOUR OF FREQUENCY DIVIDERS IMPLEMENTED WITH GaAs HETEROJUNCTION BIPOLAR TRANSISTORS Electronics Letters. 21: 1005-1006.  1
1985 Wang KC, Asbeck PM, Miller DL, Eisen FH. VOLTAGE COMPARATORS IMPLEMENTED WITH GaAs/(GaAl)As HETEROJUNCTION BIPOLAR TRANSISTORS Electronics Letters. 21: 807-808.  1
1985 Wang KC, Asbeck PM, Chang MF, Miller DL, Eisen FH. HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 99-102.  1
1984 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. VA-2 GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers- Ieee Transactions On Electron Devices. 31: 1979. DOI: 10.1109/T-ED.1984.21871  1
1984 Asbeck PM, Lee CP, Chang MCF. Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics Ieee Transactions On Electron Devices. 31: 1377-1380. DOI: 10.1109/T-ED.1984.21719  1
1984 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers Ieee Electron Device Letters. 5: 310-312. DOI: 10.1109/EDL.1984.25927  1
1984 Asbeck PM, Miller DL, Anderson RJ, Hou LD, Deming R, Eisen F. Nonthreshold Logic Ring Oscillators Implemented with GaAs/(GaAl)as Heterojunction Bipolar Transistors Ieee Electron Device Letters. 5: 181-183. DOI: 10.1109/EDL.1984.25876  1
1984 Chen RT, Holmes DE, Asbeck PM. Correlation of threshold voltage of implanted field-effect transistors and carbon in GaAs substrates Applied Physics Letters. 45: 459-461. DOI: 10.1063/1.95215  1
1984 Chang MF, Lee CP, Asbeck PM, Vahrenkamp RP, Kirkpatrick CG. Role of the piezoelectric effect in device uniformity of GaAs integrated circuits Applied Physics Letters. 45: 279-281. DOI: 10.1063/1.95172  1
1984 Asbeck PM, Miller DL. RECENT ADVANCES IN GaAs/(Ga,Al)As HETEROJUNCTION BIPOLAR TRANSISTORS Conference On Solid State Devices and Materials. 343-346.  1
1984 Hasegawa H, Abe M, Asbeck PM, Higashizaka A, Kato Y, Ohmori M. NO TITLE Conference On Solid State Devices and Materials. 413-414.  1
1983 Harris JS, Asbeck PM, Miller DL. (INVITED) HETEROJUNCTION BIPOLAR TRANSISTORS Proceedings of the Conference On Solid State Devices. 375-380. DOI: 10.7567/JJAPS.22S1.375  1
1983 Miller DL, Asbeck PM, Anderson RJ, Eisen FH. IIA-1 (GaAl)As/GaAs Heterojunction Dipolar Transistors with Graded Composition in the Base Ieee Transactions On Electron Devices. 30: 1565-1566. DOI: 10.1109/T-ED.1983.21340  1
1983 Asbeck PM, Miller DL, Babcock EJ, Kirkpatrick CG. Application of Thermal Pulse Annealing to Ion-Implanted GaAlAs/GaAs Heterojunction Bipolar Transistors Ieee Electron Device Letters. 4: 81-84. DOI: 10.1109/EDL.1983.25656  1
1983 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. EMITTER-COUPLED LOGIC CIRCUITS IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 170-173.  1
1983 Miller DL, Asbeck PM, Anderson RJ, Eisen FH. (GaAl)As/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASE Electronics Letters. 19: 367-368.  1
1983 Kirkpatrick CG, Chen RT, Holmes DE, Elliott KR, Asbeck PM. SUBSTRATE MATERIALS FOR GaAs INTEGRATED CIRCUITS Conference On Solid State Devices and Materials. 145-148.  1
1982 Asbeck PM, Miller DL, Petersen WC, Kirkpatrick CG. VIB-1 (Ga,Al) As/GaAs Heterojunction Bipolar Transistors: Design Considerations and Experimental Results Ieee Transactions On Electron Devices. 29: 1706-1707. DOI: 10.1109/T-ED.1982.21004  1
1982 Asbeck PM, Miller DL, Asatourian R, Kirkpatrick CG. Numerical Simulation of GaAs/GaAlAs Heterojunction Bipolar Transistors Ieee Electron Device Letters. 3: 403-406. DOI: 10.1109/EDL.1982.25615  1
1982 Asbeck PM, Miller DL, Petersen WC, Kirkpatrick CG. GaAs/GaAlAs Heterojunction Bipolar Transistors with Cutoff Frequencies Above 10 GHz Ieee Electron Device Letters. 3: 366-368. DOI: 10.1109/EDL.1982.25602  1
1981 Wang KL, Li CP, Asbeck PM, Kirkpatrick CG. INVESTIGATION OF DEFECT CONCENTRATION DISTRIBUTIONS IN ION-IMPLANTED AND ANNEALED GaAs Mat Res Soc Symp Proc. 2: 487-493.  1
1980 Asbeck PM, Evans CA, Tandon J, Deline VR, Welch BM. Effects of Cr Redistribution on Electrical Characteristics of Ion-Implanted Semi-Insulating GaAs Ieee Electron Device Letters. 1: 35-37. DOI: 10.1109/EDL.1980.25221  1
1979 Asbeck PM, Cammack DA, Daniele JJ, Klebanoff V. Lateral Mode Behavior in Narrow Stripe Lasers Ieee Journal of Quantum Electronics. 15: 727-733. DOI: 10.1109/JQE.1979.1070078  1
1979 Günter P, Asbeck PM, Kurtz SK. Second-harmonic generation with Ga1-xAlxAs lasers and KNbO3 crystals Applied Physics Letters. 35: 461-463. DOI: 10.1063/1.91169  1
1978 Asbeck PM, Cammack DA, Daniele JJ. Non-Gaussian fundamental mode patterns in narrow-stripe-geometry lasers Applied Physics Letters. 33: 504-506. DOI: 10.1063/1.90415  1
1977 Daniele JJ, Cammack DA, Asbeck PM. Cw GaAs/GaAlAs DH lasers grown by Peltier-induced LPE Journal of Applied Physics. 48: 914-916. DOI: 10.1063/1.323707  1
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