☰

Peter M. Asbeck - Publications

Affiliations: 
Electrical Engineering (Elec Circ and Sys) and Cog Sci University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

270/356 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Choi W, Chen R, Levy C, Tanaka A, Liu R, Balasubramanian V, Asbeck PM, Dayeh SA. An Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers. Nano Letters. PMID 32203666 DOI: 10.1021/Acs.Nanolett.0C00522  0.466
2020 Rabet B, Asbeck PM. A 28 GHz Single-Input Linear Chireix (SILC) Power Amplifier in 130 nm SiGe Technology Ieee Journal of Solid-State Circuits. 55: 1482-1490. DOI: 10.1109/Jssc.2020.2967542  0.567
2019 Asbeck PM, Rostomyan N, Ozen M, Rabet B, Jayamon JA. Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits Ieee Transactions On Microwave Theory and Techniques. 67: 3099-3109. DOI: 10.1109/Tmtt.2019.2896047  0.544
2019 Rostomyan N, Ozen M, Asbeck PM. Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends Ieee Transactions On Microwave Theory and Techniques. 67: 1030-1038. DOI: 10.1109/Tmtt.2018.2884403  0.488
2019 Rostomyan N, Diddi V, Gudem P, Asbeck P. Adaptive Cancellation of Digital Power Amplifier Receive Band Noise for FDD Transceivers Ieee Microwave and Wireless Components Letters. 29: 59-61. DOI: 10.1109/Lmwc.2018.2884640  0.465
2019 Bonen S, Alakusu U, Duan Y, Gong MJ, Dadash MS, Lucci L, Daughton DR, Adam GC, Iordanescu S, Pasteanu M, Giangu I, Jia H, Gutierrez LE, Chen WT, Messaoudi N, ... ... Asbeck P, et al. Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs Ieee Electron Device Letters. 40: 127-130. DOI: 10.1109/Led.2018.2880303  0.311
2018 Rostomyan N, Jayamon JA, Asbeck PM. 15 GHz Doherty Power Amplifier With RF Predistortion Linearizer in CMOS SOI Ieee Transactions On Microwave Theory and Techniques. 66: 1339-1348. DOI: 10.1109/Tmtt.2017.2772785  0.575
2018 Rostomyan N, Ozen M, Asbeck P. 28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE Ieee Microwave and Wireless Components Letters. 28: 446-448. DOI: 10.1109/Lmwc.2018.2813882  0.578
2017 Min J, Asbeck PM. Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 3: 18-26. DOI: 10.1109/Jxcdc.2017.2670606  0.342
2017 Vorapipat V, Levy CS, Asbeck PM. A Class-G Voltage-Mode Doherty Power Amplifier Ieee Journal of Solid-State Circuits. 52: 3348-3360. DOI: 10.1109/Jssc.2017.2748283  0.572
2017 Gheidi H, Nakatani T, Leung VW, Asbeck PM. A 1–3 GHz Delta–Sigma-Based Closed-Loop Fully Digital Phase Modulator in 45-nm CMOS SOI Ieee Journal of Solid-State Circuits. 52: 1185-1195. DOI: 10.1109/Jssc.2017.2656139  0.596
2017 Vorapipat V, Levy CS, Asbeck PM. Voltage Mode Doherty Power Amplifier Ieee Journal of Solid-State Circuits. 52: 1295-1304. DOI: 10.1109/Jssc.2017.2647954  0.573
2016 Liu Y, Liu G, Asbeck PM. High-Order Modulation Transmission Through Frequency Quadrupler Using Digital Predistortion Ieee Transactions On Microwave Theory and Techniques. DOI: 10.1109/Tmtt.2016.2561276  0.395
2016 Nakatani T, Kimball DF, Asbeck PM. Techniques for power dynamic range and back-off efficiency improvement in CMOS digitally controlled polar transmitters Ieee Transactions On Microwave Theory and Techniques. 64: 550-561. DOI: 10.1109/Tmtt.2015.2510651  0.677
2016 Gheidi H, Asbeck PM. An improved algorithm for waveform generation for digitally-driven switching-mode power amplifiers Ieee Radio and Wireless Symposium, Rws. 2016: 187-189. DOI: 10.1109/RWS.2016.7444400  0.332
2016 Liu Y, Yoo CS, Fairbanks J, Yan J, Kimball D, Asbeck P. A 53% PAE envelope tracking GaN power amplifier for 20MHz bandwidth LTE signals at 880MHz Pawr 2016 - Proceedings of the 2016 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 30-32. DOI: 10.1109/PAWR.2016.7440155  0.472
2016 Diddi V, Gheidi H, Buckwalter J, Asbeck P. High-power, high-efficiency digital polar doherty power amplifier for cellular applications in SOI CMOS Pawr 2016 - Proceedings of the 2016 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 18-20. DOI: 10.1109/PAWR.2016.7440131  0.495
2016 Asbeck P, Popovic Z. ET Comes of Age: Envelope Tracking for Higher-Efficiency Power Amplifiers Ieee Microwave Magazine. 17: 16-25. DOI: 10.1109/Mmm.2015.2505699  0.459
2016 Jayamon JA, Buckwalter JF, Asbeck PM. Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers Ieee Journal of Solid-State Circuits. 51: 2027-2039. DOI: 10.1109/Jssc.2016.2592686  0.578
2016 Gu S, Min J, Taur Y, Asbeck PM. Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz Solid-State Electronics. 118: 18-25. DOI: 10.1016/J.Sse.2016.01.001  0.344
2015 Yoo CS, Liu Y, Fairbanks J, Asbeck P, Theilmann P, Kimball D. High efficiency multi-band envelope tracking power amplifier with tunable output frequency bands 2015 Ieee 16th Annual Wireless and Microwave Technology Conference, Wamicon 2015. DOI: 10.1109/WAMICON.2015.7120372  0.796
2015 Dabag HT, Hanafi B, Gürbüz OD, Rebeiz GM, Buckwalter JF, Asbeck PM. Transmission of Signals With Complex Constellations Using Millimeter-Wave Spatially Power-Combined CMOS Power Amplifiers and Digital Predistortion Ieee Transactions On Microwave Theory and Techniques. 63: 2364-2374. DOI: 10.1109/Tmtt.2015.2428693  0.846
2015 Hanafi B, Gürbüz O, Dabag H, Buckwalter JF, Rebeiz G, Asbeck P. Q-band spatially combined power amplifier arrays in 45-nm CMOS SOI Ieee Transactions On Microwave Theory and Techniques. 63: 1937-1950. DOI: 10.1109/Tmtt.2015.2424215  0.84
2015 Liu Y, Yan JJ, Asbeck PM. Concurrent Dual-Band Digital Predistortion With a Single Feedback Loop Ieee Transactions On Microwave Theory and Techniques. DOI: 10.1109/Tmtt.2015.2417158  0.6
2015 Farsi S, Gheidi H, Dabag HT, Gudem PS, Schreurs D, Asbeck PM. Modeling of deterministic output emissions of power amplifiers into adjacent receive bands Ieee Transactions On Microwave Theory and Techniques. 63: 1250-1262. DOI: 10.1109/Tmtt.2015.2407881  0.766
2015 Gheidi H, Dabag HT, Liu Y, Asbeck PM, Gudem P. Digital cancellation technique to mitigate receiver desensitization in cellular handsets operating in carrier aggregation mode with multiple uplinks and multiple downlinks Ieee Radio and Wireless Symposium, Rws. 2015: 221-224. DOI: 10.1109/RWS.2015.7129754  0.747
2015 Gheidi H, Farsi S, Liu Y, Dabag H, Gudem P, Asbeck PM. Digital signal injection technique for cancellation of receive-band spurious emissions in FDD cellular transmitters 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7167088  0.762
2015 Wu PY, Liu Y, Hanafi B, Dabag H, Asbeck P, Buckwalter J. A 45-GHz Si/SiGe 256-QAM transmitter with digital predistortion 2015 Ieee Mtt-S International Microwave Symposium, Ims 2015. DOI: 10.1109/MWSYM.2015.7166824  0.824
2015 Asbeck PM, Lee K, Min J. Projected performance of heterostructure tunneling FETs in low power microwave and mm-wave applications Ieee Journal of the Electron Devices Society. 3: 122-134. DOI: 10.1109/Jeds.2015.2416320  0.467
2015 Diddi V, Gheidi H, Liu Y, Buckwalter J, Asbeck P. A Watt-Class, High-Efficiency, Digitally-Modulated Polar Power Amplifier in SOI CMOS 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314484  0.478
2015 Jayamon JA, Buckwalter JF, Asbeck PM. 28 GHz >mW CMOS Power Amplifier Using Multigate-Cell Design 2015 Ieee Compound Semiconductor Integrated Circuit Symposium, Csics 2015. DOI: 10.1109/CSICS.2015.7314460  0.489
2014 Liu Y, Yan JJ, Dabag HT, Asbeck PM. Novel technique for wideband digital predistortion of power amplifiers with an under-sampling ADC Ieee Transactions On Microwave Theory and Techniques. 62: 2604-2617. DOI: 10.1109/Tmtt.2014.2360398  0.804
2014 Farsi S, Draxler P, Gheidi H, Nauwelaers BKJC, Asbeck P, Schreurs D. Characterization of Intermodulation and Memory Effects Using Offset Multisine Excitation Ieee Transactions On Microwave Theory and Techniques. 62: 645-657. DOI: 10.1109/Tmtt.2014.2302745  0.757
2014 Kheirkhahi A, Yan JJ, Asbeck PM, Larson LE. Improved envelope injection and termination (EIT) RF power amplifier with envelope equalization for mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 62: 343-351. DOI: 10.1109/Tmtt.2013.2295552  0.667
2014 Jayamon J, Gurbuz O, Hanafi B, Agah A, Buckwalter J, Rebeiz G, Asbeck P. Spatially power-combined W-band power amplifier using stacked CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 151-154. DOI: 10.1109/RFIC.2014.6851683  0.818
2014 Hanafi B, Gurbuz O, Dabag H, Pornpromlikit S, Rebeiz G, Asbeck P. A CMOS 45 GHz power amplifier with output power > 600 mW using spatial power combining Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848406  0.847
2014 Agah A, Jayamon JA, Asbeck PM, Larson LE, Buckwalter JF. Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS Ieee Journal of Solid-State Circuits. 49: 1148-1157. DOI: 10.1109/Jssc.2014.2308292  0.587
2013 Shinjo S, Hong YP, Gheidi H, Kimball DF, Asbeck PM. High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications Wisnet 2013 - Proceedings: 2013 Ieee Topical Conference On Wireless Sensors and Sensor Networks - 2013 Ieee Radio and Wireless Week, Rww 2013. 13-15. DOI: 10.1109/WiSNet.2013.6488618  0.437
2013 Dabag HT, Gheidi H, Farsi S, Gudem P, Asbeck PM. All-digital cancellation technique to mitigate receiver desensitization in uplink carrier aggregation in cellular handsets Ieee Transactions On Microwave Theory and Techniques. 61: 4754-4765. DOI: 10.1109/Tmtt.2013.2287857  0.76
2013 Dabag HT, Hanafi B, Golcuk F, Agah A, Buckwalter JF, Asbeck PM. Analysis and design of stacked-FET millimeter-wave power amplifiers Ieee Transactions On Microwave Theory and Techniques. 61: 1543-1556. DOI: 10.1109/Tmtt.2013.2247698  0.856
2013 Kheirkhahi A, Yan JJ, Asbeck PM, Larson LE. Rf power amplifier efficiency enhancement by envelope injection and termination for mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 61: 878-888. DOI: 10.1109/Tmtt.2012.2234475  0.677
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS 2013 Ieee 13th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2013 - Rww 2013. 156-158. DOI: 10.1109/SiRF.2013.6489464  0.868
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS Ieee Radio and Wireless Symposium, Rws. 256-258. DOI: 10.1109/RWS.2013.6486706  0.867
2013 Hong YP, Mukai K, Gheidi H, Shinjo S, Asbeck PM. High efficiency GaN switching converter IC with bootstrap driver for envelope tracking applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 353-356. DOI: 10.1109/RFIC.2013.6569602  0.429
2013 Agah A, Wang W, Asbeck P, Larson L, Buckwalter J. A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm P sat and 16% PAE in 45-nm SOI CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 249-252. DOI: 10.1109/RFIC.2013.6569574  0.459
2013 Yan JJ, Hong YP, Shinjo S, Mukai K, Asbeck PM. Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697741  0.481
2013 Dabag HT, Gheidi H, Gudem P, Asbeck PM. All-digital cancellation technique to mitigate self-jamming in uplink carrier aggregation in cellular handsets Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697664  0.747
2013 Agah A, Jayamon J, Asbeck P, Buckwalter J, Larson L. A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697504  0.482
2013 Moon JS, Seo H-, Antcliffe M, Le D, McGuire C, Schmitz A, Nyakiti LO, Gaskill DK, Campbell PM, Lee K-, Asbeck P. Graphene FETs for Zero-Bias Linear Resistive FET Mixers Ieee Electron Device Letters. 34: 465-467. DOI: 10.1109/Led.2012.2236533  0.358
2013 Agah A, Dabag HT, Hanafi B, Asbeck PM, Buckwalter JF, Larson LE. Active millimeter-wave phase-shift doherty power amplifier in 45-nm SOI CMOS Ieee Journal of Solid-State Circuits. 48: 2338-2350. DOI: 10.1109/Jssc.2013.2269854  0.845
2013 Balteanu A, Sarkas I, Dacquay E, Tomkins A, Rebeiz GM, Asbeck PM, Voinigescu SP. A 2-bit, 24 dBm, millimeter-wave SOI CMOS power-DAC cell for watt-level high-efficiency, fully digital m-ary QAM transmitters Ieee Journal of Solid-State Circuits. 48: 1126-1137. DOI: 10.1109/Jssc.2013.2252752  0.532
2013 Hassan M, Asbeck PM, Larson LE. A CMOS dual-switching power-supply modulator with 8% efficiency improvement for 20MHz LTE Envelope Tracking RF power amplifiers Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 56: 366-367. DOI: 10.1109/ISSCC.2013.6487772  0.46
2013 Nakatani T, Kimball DF, Asbeck PM. Multiband and wide dynamic range digital polar transmitter using current-mode Class-D CMOS power amplifier Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659240  0.48
2013 Levy CS, Asbeck PM, Buckwalter JF. A CMOS SOI stacked shunt switch with Sub-500ps time constant and 19-Vpp breakdown Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2013.6659196  0.387
2013 Jayamon J, Agah A, Hanafi B, Dabag H, Buckwalter J, Asbeck P. A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS Biowireless 2013 - Proceedings: 2013 Ieee Topical Conference On Biomedical Wireless Technologies, Networks, and Sensing Systems - 2013 Ieee Radio and Wireless Week, Rww 2013. 79-81. DOI: 10.1109/BioWireleSS.2013.6613681  0.868
2013 Yan JJ, Yoo CS, Trask EM, Kim D, Asbeck PM. Effect of signal PAPR on efficiency of envelope tracking power amplifiers Asia-Pacific Microwave Conference Proceedings, Apmc. 860-862. DOI: 10.1109/APMC.2013.6694958  0.362
2013 Nakatani T, Kimball DF, Larson LE, Asbeck PM. 0.7-1.8 GHz multiband digital polar transmitter using watt-class current-mode class-D CMOS power amplifier and digital envelope modulation technique for reduced spurious emissions International Journal of Microwave and Wireless Technologies. 5: 271-284. DOI: 10.1017/S175907871300041X  0.702
2013 Yan JJ, Draxler P, Presti CD, Kimball DF, Asbeck PM. Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications International Journal of Microwave and Wireless Technologies. 5: 171-177. DOI: 10.1017/S1759078713000147  0.839
2013 Theilmann P, Yun D, Asbeck P, Park S. Superior electromagnetic interference shielding and dielectric properties of carbon nanotube composites through the use of high aspect ratio CNTs and three-roll milling Organic Electronics. 14: 1531-1537. DOI: 10.1016/J.Orgel.2013.02.029  0.739
2012 Theilmann PT, Tassoudji MA, Teague EH, Kimball DF, Asbeck PM. Computationally efficient model for uwb signal attenuation due to propagation in tissue for biomedical implants Progress in Electromagnetics Research B. 1-22. DOI: 10.2528/Pierb11112111  0.745
2012 Draxler PJ, Yan JJ, Kimball DF, Asbeck PM. Digital predistortion for envelope tracking power amplifiers 2012 Ieee 13th Annual Wireless and Microwave Technology Conference, Wamicon 2012. DOI: 10.1109/WAMICON.2012.6208474  0.807
2012 Kim J, Dabag H, Asbeck P, Buckwalter JF. Q-Band and W-band power amplifiers in 45-nm CMOS SOI Ieee Transactions On Microwave Theory and Techniques. 60: 1870-1877. DOI: 10.1109/Tmtt.2012.2193593  0.809
2012 Hassan M, Larson LE, Leung VW, Kimball DF, Asbeck PM. A wideband CMOS/GaAs HBT envelope tracking power amplifier for 4G LTE mobile terminal applications Ieee Transactions On Microwave Theory and Techniques. 60: 1321-1330. DOI: 10.1109/Tmtt.2012.2187537  0.589
2012 Kwak M, Kimball DF, Presti CD, Scuderi A, Santagati C, Yan JJ, Asbeck PM, Larson LE. Design of a wideband high-voltage high-efficiency BiCMOS envelope amplifier for micro-base-station RF power amplifiers Ieee Transactions On Microwave Theory and Techniques. 60: 1850-1861. DOI: 10.1109/Tmtt.2012.2184128  0.701
2012 Presti CD, Kimball DF, Asbeck PM. Closed-loop digital predistortion system with fast real-time adaptation applied to a handset WCDMA PA module Ieee Transactions On Microwave Theory and Techniques. 60: 604-618. DOI: 10.1109/Tmtt.2011.2181860  0.506
2012 Chen HP, Yuan Y, Yu B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. Interface-State Modeling of Al 2O 3-InGaAs MOS From Depletion to Inversion Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2012.2205255  0.329
2012 Yuan Y, Yu B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed bulk-oxide trap model for Al 2O 3 InGaAs MOS devices Ieee Transactions On Electron Devices. 59: 2100-2106. DOI: 10.1109/Ted.2012.2197000  0.32
2012 Theilmann PT, Presti CD, Kelly DJ, Asbeck PM. A μ W complementary bridge rectifier with near zero turn-on voltage in SOS CMOS for wireless power supplies Ieee Transactions On Circuits and Systems I: Regular Papers. 59: 2111-2124. DOI: 10.1109/Tcsi.2012.2185293  0.849
2012 Hassan M, Larson LE, Leung VW, Asbeck PM. Effect of envelope amplifier nonlinearities on the output spectrum of Envelope Tracking Power Amplifiers 2012 Ieee 12th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2012 - Digest of Papers. 187-190. DOI: 10.1109/SiRF.2012.6160129  0.335
2012 Agah A, Hanafi B, Dabag H, Asbeck P, Larson L, Buckwalter J. A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259632  0.862
2012 Draxler PJ, Kimball DF, Asbeck PM. Nonlinearity consideration of GaN based envelope tracking power amplifiers Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6259364  0.836
2012 Dabag HT, Asbeck PM, Buckwalter JF. Linear operation of high-power millimeter-wave stacked-FET PAs in CMOS SOI Midwest Symposium On Circuits and Systems. 686-689. DOI: 10.1109/MWSCAS.2012.6292113  0.799
2012 Gupta AK, Kim J, Asbeck P, Buckwalter JF. A 9 mW, Q-band direct-conversion I/Q modulator in SiGe BiCMOS process Ieee Microwave and Wireless Components Letters. 22: 327-329. DOI: 10.1109/Lmwc.2012.2197379  0.51
2012 Moon JS, Seo H, Antcliffe M, Lin S, McGuire C, Le D, Nyakiti LO, Gaskill DK, Campbell PM, Lee K, Asbeck P. Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection Ieee Electron Device Letters. 33: 1357-1359. DOI: 10.1109/Led.2012.2210184  0.421
2012 Yan JJ, Hsia C, Kimball DF, Asbeck PM. Design of a 4-W envelope tracking power amplifier with more than one octave carrier bandwidth Ieee Journal of Solid-State Circuits. 47: 2298-2308. DOI: 10.1109/Jssc.2012.2204927  0.814
2012 Nakatani T, Rode J, Kimball DF, Larson LE, Asbeck PM. Digitally-controlled polar transmitter using a watt-class current-mode class-D CMOS power amplifier and guanella reverse balun for handset applications Ieee Journal of Solid-State Circuits. 47: 1104-1112. DOI: 10.1109/Jssc.2012.2185554  0.714
2012 Hassan M, Larson LE, Leung VW, Asbeck PM. A combined series-parallel hybrid envelope amplifier for envelope tracking mobile terminal RF power amplifier applications Ieee Journal of Solid-State Circuits. 47: 1185-1198. DOI: 10.1109/Jssc.2012.2184639  0.571
2012 Lu W, Wang L, Gu S, Asbeck PM, Yu PKL. Critical design considerations for GaN-based microwave power varactors 2012 Ieee International Conference On Electron Devices and Solid State Circuit, Edssc 2012. DOI: 10.1109/EDSSC.2012.6482881  0.408
2012 Asbeck P, Larson L, Kimball D, Buckwalter J. CMOS handset power amplifiers: Directions for the future Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330561  0.404
2012 Lu W, Nishimura T, Wang L, Nakamura T, Yu PKL, Asbeck PM. Effects of surface micromesas on reverse leakage current in InGaN/GaN Schottky barriers Journal of Applied Physics. 112. DOI: 10.1063/1.4748317  0.313
2012 Theilmann P, Chu KM, Bandaru PR, Asbeck P, Park SH. Optimisation of microwave absorption of carbon nanotube composites through use of carboxyl-epoxide functional group linkages Electronics Letters. 48: 638-639. DOI: 10.1049/El.2012.1094  0.748
2012 Nakatani T, Kimball DF, Larson LE, Asbeck PM. 0.7-1.8 GHz digital polar transmitter using a watt-class CMOS power amplifier and digital pulse width modulation with spurious signal reduction European Microwave Week 2012: "Space For Microwaves", Eumw 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, Eumic 2012. 349-352.  0.456
2011 Hsia C, Zhu A, Yan JJ, Draxler P, Kimball DF, Lanfranco S, Asbeck PM. Digitally assisted dual-switch high-efficiency envelope amplifier for envelope-tracking base-station power amplifiers Ieee Transactions On Microwave Theory and Techniques. 59: 2943-2952. DOI: 10.1109/Tmtt.2011.2166084  0.856
2011 Lu W, Wang L, Gu S, Aplin DPR, Estrada DM, Yu PKL, Asbeck PM. Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers Ieee Transactions On Electron Devices. 58: 1986-1994. DOI: 10.1109/Ted.2011.2146254  0.558
2011 Nakatani T, Rode J, Kimball DF, Larson LE, Asbeck PM. Digital polar transmitter using a watt-class current-mode class-D CMOS power amplifier Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940654  0.447
2011 Hassan M, Kwak M, Leung VW, Hsia C, Yan JJ, Kimball DF, Larson LE, Asbeck PM. High efficiency envelope tracking power amplifier with very low quiescent power for 20 MHz LTE Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. DOI: 10.1109/RFIC.2011.5940618  0.478
2011 Hsia C, Kimball DF, Asbeck PM. Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs 2011 Ieee Radio and Wireless Week, Rww 2011 - 2011 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications, Pawr 2011. 69-72. DOI: 10.1109/PAWR.2011.5725388  0.506
2011 Kheirkhahi A, Asbeck PM, Larson LE. Enhanced class-A/AB mobile terminal power amplifier efficiency by input envelope injection and "self" envelope tracking Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972901  0.469
2011 Kim WY, Rode J, Scuderi A, Son HS, Park CS, Asbeck PM. An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2011.5972623  0.376
2011 Jeong J, Pornpromlikit S, Scuderi A, Presti C, Asbeck P. High power digitally-controlled SOI CMOS attenuator with wide attenuation range Ieee Microwave and Wireless Components Letters. 21: 433-435. DOI: 10.1109/Lmwc.2011.2160160  0.847
2011 Yan JJ, Presti CD, Kimball DF, Hong YP, Hsia C, Asbeck PM, Schellenberg J. Efficiency enhancement of mm-wave power amplifiers using envelope tracking Ieee Microwave and Wireless Components Letters. 21: 157-159. DOI: 10.1109/Lmwc.2010.2102747  0.793
2011 Shinohara K, Regan D, Milosavljevic I, Corrion AL, Brown DF, Willadsen PJ, Butler C, Schmitz A, Kim S, Lee V, Ohoka A, Asbeck PM, Micovic M. Electron velocity enhancement in laterally scaled GaN DH-HEMTs with fT of 260 GHz Ieee Electron Device Letters. 32: 1074-1076. DOI: 10.1109/Led.2011.2158386  0.364
2011 Yuan Y, Wang L, Yu B, Shin B, Ahn J, McIntyre PC, Asbeck PM, Rodwell MJW, Taur Y. A distributed model for border traps in Al2O3 - InGaAs MOS devices Ieee Electron Device Letters. 32: 485-487. DOI: 10.1109/Led.2011.2105241  0.53
2011 Moon JS, Curtis D, Zehnder D, Kim S, Gaskill DK, Jernigan GG, Myers-Ward RL, Eddy CR, Campbell PM, Lee KM, Asbeck P. Low-phase-noise graphene FETs in ambipolar RF applications Ieee Electron Device Letters. 32: 270-272. DOI: 10.1109/Led.2010.2100074  0.303
2011 Yan JJ, Hsia C, Kimball DF, Asbeck PM. GaN envelope tracking power amplifier with more than one octave carrier bandwidth Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062485  0.612
2011 Pornpromlikit S, Dabag HT, Hanafi B, Kim J, Larson LE, Buckwalter JF, Asbeck PM. A Q-band amplifier implemented with stacked 45-nm CMOS FETs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062465  0.846
2011 Dabag HT, Kim J, Larson LE, Buckwalter JF, Asbeck PM. A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 25-28. DOI: 10.1109/BCTM.2011.6082742  0.827
2010 Lee KM, Wang L, Asbeck PM, Moon JS. Analysis of resistance asymmetry due to p-n junctions in graphene FETs Materials Research Society Symposium Proceedings. 1259: 23-28. DOI: 10.1557/Proc-1259-S08-04  0.482
2010 Asbeck PM, Wang L, Gu S, Taur Y, Yu ET. Tunneling MOSFETs based on III-V staggered heterojunctions Materials Research Society Symposium Proceedings. 1252: 3-9. DOI: 10.1557/Proc-1252-I02-04  0.621
2010 Park SH, Theilmann PT, Asbeck PM, Bandaru PR. Enhanced electromagnetic interference shielding through the use of functionalized carbon-nanotube-reactive polymer composites Ieee Transactions On Nanotechnology. 9: 464-469. DOI: 10.1109/Tnano.2009.2032656  0.733
2010 Hong YP, Kimball DF, Asbeck PM, Yook JG, Larson LE. Single-ended and differential radial power combiners implemented with a compact broadband probe Ieee Transactions On Microwave Theory and Techniques. 58: 1565-1572. DOI: 10.1109/Tmtt.2010.2049165  0.505
2010 Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM. A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS Ieee Transactions On Microwave Theory and Techniques. 58: 57-64. DOI: 10.1109/Tmtt.2009.2036323  0.867
2010 Jeong J, Kimball DF, Kwak M, Draxler P, Asbeck PM. Envelope tracking power amplifiers with reduced peak-to-average power ratio RF input signals 2010 Ieee Radio and Wireless Symposium, Rww 2010 - Paper Digest. 112-115. DOI: 10.1109/RWS.2010.5434221  0.456
2010 Theilmann PT, Presti CD, Kelly D, Asbeck PM. Near zero turn-on voltage high-efficiency UHF RFID rectifier in silicon-on-sapphire CMOS Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 105-108. DOI: 10.1109/RFIC.2010.5477409  0.836
2010 Hong YP, Kimba DF, Yook JG, Asbeck PM, Larson LE. Switch-controlled multi-octave bandwidth radial power divider/combiner Ieee Mtt-S International Microwave Symposium Digest. 932-935. DOI: 10.1109/MWSYM.2010.5518214  0.423
2010 Presti CD, Metzger AG, Banbrook HM, Zampardi PJ, Asbeck PM. Efficiency improvement of a handset WCDMA PA module using Adaptive Digital Predistortion Ieee Mtt-S International Microwave Symposium Digest. 804-807. DOI: 10.1109/MWSYM.2010.5517640  0.77
2010 Hsia C, Kimball DF, Lanfranco S, Asbeck PM. Wideband high efficiency digitally-assisted envelope amplifier with dual switching stages for radio base-station envelope tracking power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 672-675. DOI: 10.1109/MWSYM.2010.5514940  0.493
2010 Lu W, Wang L, Gu S, Aplin DPR, Estrada DM, Yu PKL, Asbeck PM. InGaN/GaN Schottky Diodes With Enhanced Voltage Handling Capability for Varactor Applications Ieee Electron Device Letters. 31: 1119-1121. DOI: 10.1109/Led.2010.2058843  0.587
2010 Wang L, Yu E, Taur Y, Asbeck P. Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications Ieee Electron Device Letters. 31: 431-433. DOI: 10.1109/Led.2010.2044012  0.582
2010 Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on si-face sic wafers with a peak transconductance of 600 mS/mm Ieee Electron Device Letters. 31: 260-262. DOI: 10.1109/Led.2010.2040132  0.337
2010 Kim EJ, Wang L, Asbeck PM, Saraswat KC, McIntyre PC. Border traps in Al2 O3 / In0.53 Ga 0.47 As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. 96. DOI: 10.1063/1.3281027  0.511
2010 Wang L, Asbeck PM, Taur Y. Self-consistent 1-D Schrödinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Solid-State Electronics. 54: 1257-1262. DOI: 10.1016/J.Sse.2010.06.018  0.537
2009 Theilmann PT, Asbeck PM. An analytical model for inductively coupled implantable biomedical devices with ferrite rods. Ieee Transactions On Biomedical Circuits and Systems. 3: 43-52. PMID 23853162 DOI: 10.1109/Tbcas.2008.2004776  0.753
2009 Wang L, Yu B, Asbeck PM, Taur Y, Rodwell M. Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs International Journal of High Speed Electronics and Systems. 19: 15-22. DOI: 10.1142/S0129156409006059  0.328
2009 Jeong J, Kimball DF, Kwak M, Hsia C, Draxler P, Asbeck PM. Wideband envelope tracking power amplifiers with reduced bandwidth power supply waveforms and adaptive digital predistortion techniques Ieee Transactions On Microwave Theory and Techniques. 57: 3307-3314. DOI: 10.1109/Tmtt.2009.2033298  0.858
2009 Jeong J, Kimball DF, Kwak M, Hsia C, Draxler P, Asbeck PM. Modeling and design of RF amplifiers for envelope tracking WCDMA base-station applications Ieee Transactions On Microwave Theory and Techniques. 57: 2148-2159. DOI: 10.1109/Tmtt.2009.2027075  0.847
2009 Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM. A 25-dBm high-efficiency digitally-modulated SOI CMOS power amplifier for multi-standard RF polar transmitters Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 157-160. DOI: 10.1109/RFIC.2009.5135512  0.859
2009 Jeong J, Kimball DF, Kwak M, Hsia C, Draxler P, Asbeck PM. Wideband envelope tracking power amplifier with reduced bandwidth power supply waveform Ieee Mtt-S International Microwave Symposium Digest. 1381-1384. DOI: 10.1109/MWSYM.2009.5165963  0.479
2009 Pornpromlikit S, Jeong J, Presti CD, Scuderi A, Asbeck PM. A 33-dBm 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier Ieee Mtt-S International Microwave Symposium Digest. 533-536. DOI: 10.1109/MWSYM.2009.5165751  0.87
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304  0.323
2009 Jeong J, Kimball DF, Kwak M, Draxler P, Hsia C, Steinbeiser C, Landon T, Krutko O, Larson LE, Asbeck PM. High-efficiency WCDMA envelope tracking base-station amplifier implemented with GaAs HVHBTs Ieee Journal of Solid-State Circuits. 44: 2629-2639. DOI: 10.1109/Jssc.2009.2026845  0.859
2009 Presti CD, Carrara F, Scuderi A, Asbeck PM, Palmisano G. A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control Ieee Journal of Solid-State Circuits. 44: 1883-1896. DOI: 10.1109/Jssc.2009.2020226  0.582
2009 Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006  0.322
2008 Zhu A, Draxler PJ, Yan JJ, Brazil TJ, Kimball DF, Asbeck PM. Open-loop digital predistorter for RF power amplifiers using dynamic deviation reduction-based volterra series Ieee Transactions On Microwave Theory and Techniques. 56: 1524-1534. DOI: 10.1109/Tmtt.2008.925211  0.817
2008 Yu B, Wang L, Yuan Y, Asbeck PM, Taur Y. Scaling of nanowire transistors Ieee Transactions On Electron Devices. 55: 2846-2858. DOI: 10.1109/Ted.2008.2005163  0.534
2008 O'Sullivan T, Urteaga M, Pierson R, Asbeck PM. InP HBT millimeter-wave power amplifier implemented using planar radial power combiner Ieee Mtt-S International Microwave Symposium Digest. 293-296. DOI: 10.1109/MWSYM.2008.4633161  0.444
2008 Draxler PJ, Zhu A, Yan JJ, Kolinko P, Kimball DF, Asbeck PM. Quantifying distortion of RF power amplifiers for estimation of predistorter performance Ieee Mtt-S International Microwave Symposium Digest. 931-934. DOI: 10.1109/MWSYM.2008.4632986  0.787
2008 Rode J, Hung TP, Asbeck PM. An all-digital CMOS 915 MHz ISM band 802.15.4 / ZigBee transmitter with a noise spreading direct quantization algorithm Ieee Mtt-S International Microwave Symposium Digest. 755-758. DOI: 10.1109/MWSYM.2008.4632942  0.667
2008 Conway AM, Asbeck PM, Moon JS, Micovic M. Accurate thermal analysis of GaN HFETs Solid-State Electronics. 52: 637-643. DOI: 10.1016/J.Sse.2007.10.049  0.38
2008 Farcich NJ, Asbeck PM. Soft-lithography defined coaxial-like transmission line with 2.5 dimensional features Microwave and Optical Technology Letters. 50: 2827-2830. DOI: 10.1002/Mop.23798  0.346
2007 Asbeck P, Kimball D, Jeong J, Draxler P, Hsia C, Larson L. Next Generation High-Efficiency RF Transmitter Technology for Basestations The Japan Society of Applied Physics. 2007: 146-147. DOI: 10.7567/Ssdm.2007.G-1-1  0.789
2007 Hung TP, Rode J, Larson LE, Asbeck PM. Design of H-bridge class-D power amplifiers for digital pulse modulation transmitters Ieee Transactions On Microwave Theory and Techniques. 55: 2845-2855. DOI: 10.1109/TMTT.2007.909881  0.414
2007 Li JC, Royter Y, Hussain T, Chen MY, Fields CH, Rajavel RD, Bui SS, Shi B, Hitko DA, Chow DH, Asbeck PM, Sokolich M. Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs Ieee Transactions On Electron Devices. 54: 398-409. DOI: 10.1109/Ted.2006.890370  0.557
2007 Hung TP, Rode J, Larson LE, Asbeck PM. H-bridge class-D power amplifiers for digital pulse modulation transmitters Ieee Mtt-S International Microwave Symposium Digest. 1091-1094. DOI: 10.1109/MWSYM.2007.380283  0.635
2007 Conway AM, Asbeck PM. Virtual gate large signal model of GaN HFETs Ieee Mtt-S International Microwave Symposium Digest. 605-608. DOI: 10.1109/MWSYM.2007.379973  0.374
2007 Hung TP, Choi DK, Larson LE, Asbeck PM. CMOS outphasing class-D amplifier with Chireix combiner Ieee Microwave and Wireless Components Letters. 17: 619-621. DOI: 10.1109/Lmwc.2007.901800  0.731
2007 Wang F, Kimball DF, Lie DY, Asbeck PM, Larson LE. A monolithic high-efficiency 2.4-GHz 20-dBm SiGe BiCMOS envelope-tracking OFDM power amplifier Ieee Journal of Solid-State Circuits. 42: 1271-1281. DOI: 10.1109/Jssc.2007.897170  0.57
2007 O'Sullivan T, Le M, Partyka P, Milano R, Asbeck PM. Design of a 70 GHz power amplifier using a digital InP HBT process Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 214-217. DOI: 10.1109/BIPOL.2007.4351872  0.42
2007 Draxler PJ, Asbeck PM. Statistical evaluation of finite length digital modulation sequences 2006 67th Arftg Microwave Measurements Conference - Measurements and Design of High Power Devices and Systems. 259-261. DOI: 10.1109/ARFTG.2006.4734401  0.776
2007 Li JC, Hussain T, Hitko DA, Royter Y, Fields CH, Milosavljevic I, Thomas S, Rajavel RD, Asbeck PM, Sokolich M. Reduced temperature S-parameter measurements of 400+ GHz sub-micron InP DHBTs Solid-State Electronics. 51: 870-881. DOI: 10.1016/J.Sse.2007.04.012  0.555
2007 Chung T, Keogh DM, Ryou JH, Yoo D, Limb J, Lee W, Shen SC, Asbeck PM, Dupuis RD. High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 298: 852-856. DOI: 10.1016/J.Jcrysgro.2006.10.231  0.785
2007 Jeong J, Asbeck P. Efficiency ehancement of W-CDMA base-station envelope tracking power amplifiers via load modulation Microwave and Optical Technology Letters. 49: 1954-1957. DOI: 10.1002/Mop.22566  0.5
2006 Asbeck PM, Qiao D. Adaptive power amplifiers for military and commercial communications Proceedings of Spie - the International Society For Optical Engineering. 6232. DOI: 10.1117/12.669447  0.424
2006 Wang F, Kimball DF, Popp JD, Yang AH, Lie DY, Asbeck PM, Larson LE. An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11g WLAN applications Ieee Transactions On Microwave Theory and Techniques. 54: 4086-4098. DOI: 10.1109/Tmtt.2006.885575  0.548
2006 Kimball DF, Jeong J, Hsia C, Draxler P, Lanfranco S, Nagy W, Linthicum K, Larson LE, Asbeck PM. High-efficiency envelope-tracking W-CDMA base-station amplifier using GaN HFETs Ieee Transactions On Microwave Theory and Techniques. 54: 3848-3855. DOI: 10.1109/Tmtt.2006.884685  0.859
2006 Li JC, Hitko DA, Sokolich M, Asbeck PM. Experimental method to thermally deembed pads from RTH measurements Ieee Transactions On Electron Devices. 53: 2540-2544. DOI: 10.1109/Ted.2006.882270  0.557
2006 Zhao Y, Metzger A, Zampardi PJ, Iwamoto M, Asbeck PM. Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model Ieee Mtt-S International Microwave Symposium Digest. 877-880. DOI: 10.1109/MWSYM.2006.249832  0.793
2006 Rode J, Swaminathan A, Galton I, Asbeck PM. Fractional-N direct digital frequency synthesis with a 1-Bit output Ieee Mtt-S International Microwave Symposium Digest. 415-418. DOI: 10.1109/MWSYM.2006.249559  0.559
2006 Jinho J, Pornpromlikit S, Asbeck PM, Kelly D. A 20 dBm linear RF power amplifier using stacked silicon-on-sapphire MOSFETs Ieee Microwave and Wireless Components Letters. 16: 684-686. DOI: 10.1109/Lmwc.2006.885634  0.866
2006 Metzger AG, Asbeck PM. A nonlinear electronic equalizer implemented in InGaP/GaAs HBT technology for dispersion compensation of gigabit optical fiber links Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 145-148. DOI: 10.1109/CSICS.2006.319931  0.773
2006 Metzger AG, Asbeck PM. A 64-bit high-speed read-write look-up table memory implemented in GaAs HBT Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. DOI: 10.1109/BIPOL.2006.311162  0.765
2006 Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619  0.787
2006 Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Chu-Kung B, Feng M, Keogh DM, Asbeck PM. Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88. DOI: 10.1063/1.2198014  0.789
2006 Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou J-, Lee W, Shen S-, Dupuis RD. High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/Iel:20060333  0.787
2006 Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High current gain InGaN/GaN HBTs with 300°C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/El:20060333  0.785
2006 Wang L, Wang D, Asbeck PM. A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures Solid-State Electronics. 50: 1732-1739. DOI: 10.1016/J.Sse.2006.09.013  0.502
2006 Li JC, Sokolich M, Hussain T, Asbeck PM. Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Solid-State Electronics. 50: 1440-1449. DOI: 10.1016/J.Sse.2006.04.047  0.563
2006 Keogh D, Asbeck P, Chung T, Dupuis RD, Feng M. Digital etching of III-N materials using a two-step Ar/KOH technique Journal of Electronic Materials. 35: 771-776. DOI: 10.1007/S11664-006-0137-6  0.744
2006 Chung T, Limb J, Ryou JH, Lee W, Li P, Yoo D, Zhang XB, Shen SC, Dupuis RD, Keogh D, Asbeck P, Chukung B, Feng M, Zakharov D, Lilienthal-Weber Z. Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700. DOI: 10.1007/S11664-006-0123-Z  0.757
2005 Li MY, Galton I, Larson LE, Asbeck PM. Nonlinearity estimation and spectral regrowth prediction of power amplifiers using correlation techniques 2005 Ieee Annual Conference On Wireless and Microwave Technology, Wamicon 2005 - Conference Proceedings. 2005: 170-173. DOI: 10.1109/WAMIC.2005.1528410  0.304
2005 Wang F, Yang AH, Kimball DF, Larson LE, Asbeck PM. Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications Ieee Transactions On Microwave Theory and Techniques. 53: 1244-1254. DOI: 10.1109/Tmtt.2005.845716  0.51
2005 Deng J, Gudem PS, Larson LE, Asbeck PM. A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications Ieee Transactions On Microwave Theory and Techniques. 53: 529-537. DOI: 10.1109/TMTT.2004.840629  0.455
2005 Conway AM, Zhao Y, Asbeck PM, Micovic M, Moon J. Dynamic gate bias technique for improved linearity of GaN HFET power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 499-502. DOI: 10.1109/MWSYM.2005.1516639  0.389
2005 Li JC, Chen M, Hitko DA, Fields CH, Shi B, Rajavel R, Asbeck PM, Sokolich M. A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) Ieee Electron Device Letters. 26: 136-138. DOI: 10.1109/Led.2004.842734  0.528
2005 Deng J, Gudem P, Larson LE, Kimball D, Asbeck PM. A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications Digest of Papers - Ieee Radio Frequency Integrated Circuits Symposium. 247-250. DOI: 10.1109/JSSC.2006.872735  0.46
2005 Keogh DM, Dupuis RD, Feng M, Raychaudhuri S, Asbeck PM. Improvement of III-N surfaces after inductively coupled plasma dry etch exposure Proceedings - Electrochemical Society. 354-360.  0.743
2004 Li JC, Keogh DM, Raychaudhuri S, Conway A, Qiao D, Asbeck PM. Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs International Journal of High Speed Electronics and Systems. 14: 825-830. DOI: 10.1142/S0129156404002909  0.805
2004 Stevens KS, Welty RJ, Welser RE, Landini BE, Asbeck PM, Hung SC, Lu WP, Feng SC. Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs Ieee Transactions On Electron Devices. 51: 1545-1553. DOI: 10.1109/Ted.2004.834905  0.757
2004 Welty RJ, Xin H, Tu CW, Asbeck PM. Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen Journal of Applied Physics. 95: 327-333. DOI: 10.1063/1.1631075  0.77
2004 Deng J, Gudem P, Larson LE, Asbeck PM. A high-efficiency SiGe BiCMOS WCDMA power amplifier with dynamic current biasing for improved average efficiency Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 361-364.  0.445
2004 Hung TP, Metzger AG, Zampardi PJ, Iwamoto M, Asbeck PM. High efficiency current-mode class-D amplifier with integrated resonator Ieee Mtt-S International Microwave Symposium Digest. 3: 2035-2038.  0.806
2004 Tu CW, Hong YG, André R, Welty RJ, Asbeck PM. Bandgap engineering of GaInNP on GaAs(001) for electronic applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 631-635.  0.705
2003 Vaidyanathan M, Iwamoto M, Larson LE, Gudem PS, Asbeck PM. A theory of high-frequency distortion in bipolar transistors Ieee Transactions On Microwave Theory and Techniques. 51: 448-461. DOI: 10.1109/Tmtt.2002.807821  0.339
2003 Welty RJ, Mochizuki K, Lutz CR, Welser RE, Asbeck PM. Design and performance of tunnel collector HBTs for microwave power amplifiers Ieee Transactions On Electron Devices. 50: 894-900. DOI: 10.1109/Ted.2003.812088  0.79
2003 Rode J, Hinrichs J, Asbeck P. Transmitter architecture using digital generation of RF signals Proceedings - 2003 Ieee Radio and Wireless Conference, Rawcon 2003. 245-248. DOI: 10.1109/RAWCON.2003.1227938  0.62
2003 Singh DV, Koester SJ, Chu JO, Jenkins KA, Mooney PM, Ouyang QC, Ruiz N, Ott JA, Ralston D, Wetzel M, Asbeck PM, Saenger KL, Patel VV, Grill A. Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs Electronics Letters. 39: 570-572. DOI: 10.1049/El:20030353  0.443
2003 Zhao Y, Iwamoto M, Larson LE, Asbeck PM. Doherty amplifier with DSP control to improve performance in CDMA operation Ieee Mtt-S International Microwave Symposium Digest. 2: 687-690.  0.367
2002 Zhang X, Larson LE, Asbeck PM, Langridge RA. Analysis of power recycling techniques for RF and microwave outphasing power amplifiers Ieee Transactions On Circuits and Systems Ii: Analog and Digital Signal Processing. 49: 312-320. DOI: 10.1109/Tcsii.2002.801411  0.515
2002 Wang C, Larson LE, Asbeck PM. Improved design technique of a microwave class-E power amplifier with finite switching-on resistance Proceedings - Rawcon 2002: 2002 Ieee Radio and Wireless Conference. 241-244. DOI: 10.1109/RAWCON.2002.1030162  0.342
2002 DeLuca PM, Lutz CR, Welser RE, Chi TY, Huang EK, Welty RJ, Asbeck PM. Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions Ieee Electron Device Letters. 23: 582-584. DOI: 10.1109/Led.2002.803761  0.771
2002 Asbeck P, Galton I, Wang KC, Jensen JF, Oki AK, Chang CTM. Digital signal processing - Up to microwave frequencies Ieee Transactions On Microwave Theory and Techniques. 50: 900-909. DOI: 10.1109/22.989973  0.396
2002 Raab F, Asbeck P, Cripps S, Kenington P, Popovic Z, Pothecary N, Sevic J, Sokal N. Power amplifiers and transmitters for RF and microwave Ieee Transactions On Microwave Theory and Techniques. 50: 814-826. DOI: 10.1109/22.989965  0.527
2002 Zampardi P, Chang C, Fitzsimmons S, Pierson R, McDermott B, Chen P, Asbeck P. Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design Ieee Transactions On Electron Devices. 49: 540-543. DOI: 10.1109/16.992859  0.424
2002 Asbeck PM, Welty RJ, Tu CW, Xin HP, Welser RE. Heterojunction bipolar transistors implemented with GaInNAs materials Semiconductor Science and Technology. 17: 898-906. DOI: 10.1088/0268-1242/17/8/319  0.788
2002 Kim Y, Farcich NJ, Kim SC, Nam S, Asbeck PM. Size reduction of microstrip antenna by elevating centre of patch Electronics Letters. 38: 1163-1165. DOI: 10.1049/El:20020798  0.3
2002 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. GaAs/Ga0.89In0.11N0.02As0.98 /GaAs NpN double heterojunction bipolar transistor with low turn-on voltage Solid-State Electronics. 46: 1-5. DOI: 10.1016/S0038-1101(01)00315-X  0.789
2002 Kobayashi H, Asbeck PM. Active cancellation of switching noise for DC-DC converter-driven RF power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 3: 1647-1650.  0.339
2002 López-González JM, Keogh DM, Asbeck PM. An Ebers-Moll Model for Heterostructure Bipolar Transistors with Tunnel Junctions Proceedings Ieee Lester Eastman Conference On High Performance Devices. 240-244.  0.747
2002 Asbeck PM, Kobayashi H, Iwamoto M, Hanington G, Nam S, Larson LE. Augmented behavioral characterization for modeling the nonlinear response of power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 1: 135-138.  0.347
2001 Zhang X, Larson LE, Asbeck PM, Nanawa P. Gain/phase imbalance-minimization techniques for LINC transmitters Ieee Transactions On Microwave Theory and Techniques. 49: 2507-2516. DOI: 10.1109/22.971643  0.306
2001 Kobayashi H, Hinrichs JM, Asbeck PM. Current-mode class-D power amplifiers for high-efficiency RF applications Ieee Transactions On Microwave Theory and Techniques. 49: 2480-2485. DOI: 10.1109/22.971639  0.323
2001 Iwamoto M, Williams A, Chen PF, Metzger AG, Larson LE, Asbeck PM. An extended Doherty amplifier with high efficiency over a wide power range Ieee Transactions On Microwave Theory and Techniques. 49: 2472-2479. DOI: 10.1109/22.971638  0.84
2001 Jia L, Yu ET, Keogh D, Asbeck PM, Miraglia P, Roskowski A, Davis RF. Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures Applied Physics Letters. 79: 2916-2918. DOI: 10.1063/1.1412594  0.746
2001 Kobayashi H, Hinrichs J, Asbeck PM. Current mode class-D power amplifiers for high efficiency RF applications Ieee Mtt-S International Microwave Symposium Digest. 2: 939-942.  0.323
2001 Wang C, Larson LE, Asbeck PM. A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier Ieee Radio Frequency Integrated Circuits Symposium, Rfic, Digest of Technical Papers. 39-42.  0.462
2001 Welty RJ, Mochizuki K, Lutz CR, Asbeck PM. Tunnel collector GaInP/GaAs HBTs for microwave power amplifiers Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 74-77.  0.776
2000 Dang X, Asbeck PM, Yu ET, Boutros KS, Redwing JM. Long time-constant trap effects in nitride heterostructure field effect transistors Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T6.28.1  0.338
2000 Wetzel M, Shi L, Jenkins K, de la Houssaye P, Taur Y, Asbeck P, Lagnado I. A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider Ieee Microwave and Guided Wave Letters. 10: 421-423. DOI: 10.1109/75.877232  0.376
2000 Asbeck PM, Larson LE. Synergistic design of DSP and power amplifiers for wireless communications Asia-Pacific Microwave Conference Proceedings, Apmc. 23. DOI: 10.1109/22.963154  0.526
2000 Asbeck PM, Larson LE. Synergistic design of DSP and power amplifiers for wireless communications Asia-Pacific Microwave Conference Proceedings, Apmc. 23. DOI: 10.1109/22.963154  0.432
2000 Mochizuki K, Welty RJ, Asbeck PM, Lutz CR, Welser RE, Whitney SJ, Pan N. GalnP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-Up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers Ieee Transactions On Electron Devices. 47: 2277-2283. DOI: 10.1109/16.887008  0.775
2000 Iwamoto M, Jayaraman A, Hanington G, Chen PF, Bellora A, Thornton W, Larson LE, Asbeck PM. Bandpass delta-sigma class-S amplifier Electronics Letters. 36: 1010-1012. DOI: 10.1049/El:20000794  0.502
2000 Mochizuki K, Welty RJ, Asbeck PM. GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics Electronics Letters. 36: 264-265. DOI: 10.1049/El:20000211  0.783
2000 Hsin YM, Asbeck PM. Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases Solid-State Electronics. 44: 587-592. DOI: 10.1016/S0038-1101(99)00294-4  0.359
2000 Asbeck PM, Yu ET, Lau SS, Sun W, Dang X, Shi C. Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs Solid-State Electronics. 44: 211-219. DOI: 10.1016/S0038-1101(99)00226-9  0.319
2000 Welty RJ, Xin HP, Mochizuki K, Tu CW, Asbeck PM. Design and characterization of GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage Annual Device Research Conference Digest. 145-146.  0.777
1999 Yu ET, Dang XZ, Asbeck PM, Lau SS, Sullivan GJ. Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures Journal of Vacuum Science & Technology B. 17: 1742-1749. DOI: 10.1116/1.590818  0.305
1999 Larson L, Asbeck P, Hanington G, Chen E, Jayamaran A, Langridge R, Zhang X. Device and circuit approaches for improved wireless communications transmitters Ieee Personal Communications. 6: 18-23. DOI: 10.1109/98.799616  0.408
1999 Hanington G, Chen PF, Asbeck PM, Larson LE. High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications Ieee Transactions On Microwave Theory and Techniques. 47: 1471-1476. DOI: 10.1109/22.780397  0.705
1999 Langridge R, Thornton T, Asbeck PM, Larson LE. A power re-use technique for improved efficiency of outphasing microwave power amplifiers Ieee Transactions On Microwave Theory and Techniques. 47: 1467-1470. DOI: 10.1109/22.780396  0.511
1999 Chen PF, Hsin YMT, Welty RJ, Asbeck PM, Pierson RL, Zampardi PJ, Ho WJ, Vincent Ho MC, Frank Chang M. Application of GalnP/GaAs DHBT's to power amplifiers for wireless communications Ieee Transactions On Microwave Theory and Techniques. 47: 1433-1438. DOI: 10.1109/22.780391  0.817
1999 Dang XZ, Asbeck PM, Yu ET, Sullivan GJ, Chen MY, McDermott BT, Boutros KS, Redwing JM. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor Applied Physics Letters. 74: 3890-3892. DOI: 10.1063/1.124214  0.334
1999 Hanington G, Metzger A, Asbeck P, Finlay H. Integrated DC-DC converter using GaAs HBT technology Electronics Letters. 35: 2110-2112. DOI: 10.1049/El:19991458  0.501
1999 Dang XZ, Welty RJ, Qiao D, Asbeck PM, Lau SS, Yu ET, Boutros KS, Redwing JM. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET Electronics Letters. 35: 602-603. DOI: 10.1049/El:19990282  0.752
1999 Schuermeyer F, Zampardi PJ, Asbeck PM. Photoemission studies on heterostructure bipolar transistors Solid-State Electronics. 43: 1555-1560. DOI: 10.1016/S0038-1101(99)00103-3  0.357
1998 Chang CE, Wang KC, Campaña AD, Metzger AG, Asbeck PM, Beccue SM. High Speed Crosspoint Switches International Journal of High Speed Electronics and Systems. 9: 505-548. DOI: 10.1142/S0129156498000221  0.336
1998 Jayaraman A, Chen P, Hanington G, Larson L, Asbeck P. Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators Ieee Microwave and Guided Wave Letters. 8: 121-123. DOI: 10.1109/75.661135  0.486
1998 Park SH, Chin TP, Liu QZ, Fu SL, Nakamura T, Yu PKL, Asbeck PM. Submicron self-aligned HBT's by selective emitter regrowth Ieee Electron Device Letters. 19: 118-120. DOI: 10.1109/55.663533  0.353
1998 Johnson RA, De La Houssaye PR, Chang CE, Chen PF, Wood ME, Garcia GA, Lagnado I, Asbeck PM. Advanced thin-film silicon-on-sapphire technology: microwave circuit applications Ieee Transactions On Electron Devices. 45: 1047-1054. DOI: 10.1109/16.669525  0.419
1998 Yu ET, Dang XZ, Yu LS, Qiao D, Asbeck PM, Lau SS, Sullivan GJ, Boutros KS, Redwing JM. Schottky barrier engineering in III-V nitrides via the piezoelectric effect Applied Physics Letters. 73: 1880-1882. DOI: 10.1063/1.122312  0.337
1998 Hsin YM, Li NY, Tu CW, Asbeck PM. AlGaAs/GaAs HBTs with extrinsic base regrowth Journal of Crystal Growth. 188: 355-358. DOI: 10.1016/S0022-0248(98)00099-2  0.363
1998 Hanington G, Chen PF, Radisic V, Itoh T, Asbeck PM. Microwave power amplifier efficiency improvement with a 10 MHz HBT dc-dc converter Ieee Mtt-S International Microwave Symposium Digest. 2: 589-592.  0.443
1998 Chang MF, Yang YF, Qian Y, Itoh T, Tu C, Asbeck PM. High efficiency and high linearity microwave power amplifiers based on ultra-high fmax selective buried sub-collector (SBSC) HBTs Proceedings - Ieee Military Communications Conference Milcom. 3: 704-707.  0.486
1997 Park SH, Fu SL, Yu PKL, Asbeck PM. GaInP selective area epitaxy for heterojunction bipolar transistor applications Materials Research Society Symposium - Proceedings. 448: 253-258. DOI: 10.1557/Proc-448-253  0.374
1997 Chang WSC, Loi KK, Liao HH, Hodiak JH, Yu PKL, Asbeck PM. Electroabsorption multiple quantum well modulators for high-frequency applications High-Power Lasers and Applications. 3290: 142-156. DOI: 10.1117/12.298235  0.418
1997 Chang CE, Chen PF, Asbeck PM, Tran LT, Streit DC, Oki AK. Lightly doped emitter HBT for low-power circuits Ieee Microwave and Guided Wave Letters. 7: 377-379. DOI: 10.1109/75.641426  0.489
1997 Johnson RA, Chang CE, De La Houssaye PR, Wood ME, Garcia GA, Asbeck PM, Lagnado I. A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier Ieee Microwave and Guided Wave Letters. 7: 350-352. DOI: 10.1109/75.631198  0.429
1997 Deng F, Johnson RA, Asbeck PM, Lau SS, Dubbelday WB, Hsiao T, Woo J. Salicidation process using NiSi and its device application Journal of Applied Physics. 81: 8047-8051. DOI: 10.1063/1.365410  0.306
1997 Yu ET, Sullivan GJ, Asbeck PM, Wang CD, Qiao D, Lau SS. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors Applied Physics Letters. 71: 2794-2796. DOI: 10.1063/1.120138  0.302
1997 Johnson RA, Houssaye PRDL, Wood ME, Garcia GA, Chang CE, Asbeck PM, Lagnado I. Silicon-on-sapphire MOSFET transmit/receive switch for L and S band transceiver applications Electronics Letters. 33: 1324-1326. DOI: 10.1049/El:19970898  0.421
1997 Hanington G, Asbeck PM. Base resistance measurements in HBTs using base-emitter reverse bias breakdown Solid-State Electronics. 41: 669-671. DOI: 10.1016/S0038-1101(96)00250-X  0.325
1997 Li NY, Hsin YM, Asbeck PM, Tu CW. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic Journal of Crystal Growth. 175: 387-392. DOI: 10.1016/S0022-0248(96)00827-5  0.316
1996 Johnson RA, Chang CE, Asbeck PM, Wood ME, Garcia GA, Lagnado I. Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon Ieee Microwave and Guided Wave Letters. 6: 323-325. DOI: 10.1109/75.535833  0.342
1996 Chen PF, Johnson RA, Ho MC, Ho WJ, Sailer A, Chang M, Asbeck PM. Microwave and thermal characteristics of backside-connected flip-chip power heterojunction bipolar transistors Electronics Letters. 32: 1931-1932. DOI: 10.1049/El:19961236  0.442
1996 Hsin YM, Vu DP, Asbeck PM. Experimental I-V characteristics of AIGaAs/GaAs heterojunction bipolar transistors with very thin bases Electronics Letters. 32: 1323-1324. DOI: 10.1049/El:19960853  0.343
1995 Houssaye PRdl, Chang CE, Offord B, Imthurn G, Johnson R, Asbeck PM, Garcia GA, Lagnado I. Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's Ieee Electron Device Letters. 16: 289-292. DOI: 10.1109/55.790738  0.334
1995 Ho MC, Johnson RA, Asbeck PM, Ho WJ, Chang MF. High-Performance Low-Base-Collector Capacitance AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Deep Ion Implantation Ieee Electron Device Letters. 16: 512-514. DOI: 10.1109/55.468284  0.317
1995 Chin TP, Asbeck PM. Impact ionization coefficients in (100) GaInP Applied Physics Letters. 66: 3507-3509. DOI: 10.1063/1.113779  0.303
1995 Hsin YM, Ho MC, Mei XB, Liao HH, Chin TP, Tu CW, Asbeck PM. Pseudomorphic AlInP/InP heterojunction bipolar transistors Electronics Letters. 31: 141-142. DOI: 10.1049/El:19950084  0.389
1995 Asbeck P. Development of HBT structure to minimize parasitic elements Solid-State Electronics. 38: 1691-1695. DOI: 10.1016/0038-1101(95)00044-T  0.346
1995 Li N, Hsin Y, Dong H, Nakamura T, Asbeck P, Tu C. Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources Journal of Crystal Growth. 150: 562-567. DOI: 10.1016/0022-0248(95)80273-F  0.308
1995 Park SH, M. M, Yu PKL, Asbeck PM. Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling Journal of Electronic Materials. 24: 1381-1386. DOI: 10.1007/Bf02655452  0.327
1994 ASBECK P, CHANG M, PEDROTTI K. FUTURE DIRECTIONS FOR HBT DEVELOPMENT International Journal of High Speed Electronics and Systems. 5: 493-527. DOI: 10.1142/S0129156494000206  0.335
1994 WANG K, NUBLING RB, PEDROTTI K, SHENG N, ASBECK PM, POULTON K, CORCORAN J, KNUDSEN K, YUAN H, CHANG C. AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS International Journal of High Speed Electronics and Systems. 5: 213-252. DOI: 10.1142/S0129156494000127  0.37
1994 Kwok CY, Sheng NH, Asbeck PM. 300 ps 4K read-only memory implemented with AlGaAs/GaAs HBT technology Electronics Letters. 30: 759-760. DOI: 10.1049/el:19940532  0.335
1994 Asbeck PM, Chang MF, Wang KC, Sullivan GJ. Heterojunction Bipolar Transistors in III—V Semiconductors Vlsi Electronics Microstructure Science. 24: 107-155. DOI: 10.1016/B978-0-12-234124-3.50009-4  0.376
1994 Fu S-, Chin TP, Zhu B, Tu CW, Lau SS, Asbeck PM. Electrical properties of He + ion-implanted GaInP Journal of Electronic Materials. 23: 403-407. DOI: 10.1007/Bf02671221  0.303
1993 Chang CE, Brown ER, Asbeck PM, Wang KC. Analysis of Heterojunction Bipolar Transistor/Resonant Tunneling Diode Logic for Low-Power and High-speed Digital Applications Ieee Transactions On Electron Devices. 40: 685-691. DOI: 10.1109/16.202778  0.499
1993 Zampardi PJ, Beccue SM, Pedrotti KD, Pierson RL, Chang MF, Wang KC, Cheskis D, Chang CE, Asbeck PM. Monolithically integrated HBT/MESFET circuit Electronics Letters. 29: 1100-1102. DOI: 10.1049/El:19930734  0.397
1993 Gee RC, Lin CL, Farley CW, Seabury CW, Higgins JA, Kirchner PD, Woodall JM, Asbeck PM. InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions Electronics Letters. 29: 850-851. DOI: 10.1049/El:19930568  0.306
1992 Wang K-, Beccue SM, Chang M-F, Nubling RB, Cappon AM, Tsen TC-, Chen DM, Asbeck PM, Kwok CY. Diode-HBT-logic circuits monolithically integrable with ECl/CML circuits Ieee Journal of Solid-State Circuits. 27: 1372-1378. DOI: 10.1109/4.156440  0.445
1992 Waldrop JR, Wang KC, Asbeck PM. Determination of Junction Temperature in AIGaAs/ GaAs Heterojunction Bipolar Transistors by Electrical Measurement Ieee Transactions On Electron Devices. 39: 1248-1250. DOI: 10.1109/16.129117  0.306
1992 Yan D, Pollak FH, Boccio VT, Lin CL, Kirchner PD, Woodall JM, Gee RC, Asbeck PM. Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure Applied Physics Letters. 61: 2066-2068. DOI: 10.1063/1.108308  0.319
1991 Asbeck PM, Chang MF, Wang KC, Sullivan GJ, Higgins JA. GaAlAs/GaAs heterojunction bipolar transistors. Issues and prospects for application Conference On Solid State Devices and Materials. 71-73. DOI: 10.7567/Ssdm.1991.C-1-1  0.512
1991 Sheng NH, Ho WJ, Wang NL, Pierson RL, Asbeck PM, Edwards WL. A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier Ieee Microwave and Guided Wave Letters. 1: 208-210. DOI: 10.1109/75.84589  0.502
1991 Wang G-, Pierson RL, Asbeck PM, Wang K-, Wang N-, Nubling R, Chang MF, Salerno J, Sastry S. High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base Ieee Electron Device Letters. 12: 347-349. DOI: 10.1109/55.82083  0.403
1991 Sheng NH, Pierson RL, Wang KC, Nubling RB, Asbeck PM, Chang MCF, Edwards WL, Phillips DE. Special Brief Papers: A High-Speed Multimodulus HBT Prescaler for Frequency Synthesizer Applications Ieee Journal of Solid-State Circuits. 26: 1362-1367. DOI: 10.1109/4.90086  0.446
1991 Nubling R, Yu J, Wang K, Asbeck P, Sheng N, Chang M, Pierson R, Sullivan G, McDonald M, Price A, Chen A. High-speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBTs Ieee Journal of Solid-State Circuits. 26: 1354-1361. DOI: 10.1109/4.90085  0.459
1990 Sullivan GJ, Chang MF, Sheng N-, Anderson RJ, Wang N-, Wang K-, Higgins JA, Asbeck PM. AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillation Ieee Electron Device Letters. 11: 463-465. DOI: 10.1109/55.62997  0.384
1990 Wang NL, Sheng NH, Chang M-F, Ho WJ, Sullivan GJ, Sovero EA, Higgins JA, Asbeck PM. Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz Ieee Transactions On Microwave Theory and Techniques. 38: 1381-1390. DOI: 10.1109/22.58675  0.532
1990 Asbeck PM, Farley CW, Chang MF, Wang KC, Ho WJ. InP-based heterojunction bipolar transistors: Performance status and circuit applications Second International Conference On Indium Phosphide and Related Materials. 2-5.  0.346
1989 Farley C, Wang K, Chang M, Asbeck P, Nubling R, Sheng N, Pierson R, Sullivan G. A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's Ieee Electron Device Letters. 10: 377-379. DOI: 10.1109/55.31762  0.52
1989 Farley C, Chang M, Asbeck P, Wang K, Sheng N, Pierson R, Nubling R. High performance AlInAs/GaInAs HBTs for high speed, low power digital circuits Ieee Transactions On Electron Devices. 36: 2601-2602. DOI: 10.1109/16.43696  0.515
1989 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL, Basit HF. Noninterfering optical method of HBT circuit evaluation Electronics Letters. 25: 1111-1112. DOI: 10.1049/El:19890745  0.356
1989 Farley C, Chang M, Asbeck P, Sheng N, Pierson R, Sullivan G, Wang K, Nubling R. High-speed (ft = 78 GHz) AlInAs/GaInAs single heterojunction HBT Electronics Letters. 25: 846. DOI: 10.1049/El:19890570  0.418
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. 4-BIT QUANTIZER IMPLEMENTED WITH ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 83-86.  0.341
1986 Wang KC, Asbeck PM, Chang MF, Miller DL, Sullivan GJ. HIGH-SPEED MSI CURRENT-MODE LOGIC CIRCUITS IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 159-162.  0.31
1985 Wang KC, Asbeck PM, Miller DL, Eisen FH. VOLTAGE COMPARATORS IMPLEMENTED WITH GaAs/(GaAl)As HETEROJUNCTION BIPOLAR TRANSISTORS Electronics Letters. 21: 807-808.  0.325
1985 Wang KC, Asbeck PM, Chang MF, Miller DL, Eisen FH. HIGH-SPEED, HIGH-ACCURACY VOLTAGE COMPARATORS IMPLEMENTED WITH GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 99-102.  0.366
1982 Harris JS, Miller DL, Asbeck PM. GaAs/(AlGa)As Heterojunction Bipolar Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.1982.B-6-1  0.341
Low-probability matches (unlikely to be authored by this person)
1995 Knudsen KL, Poulton K, Corcoran JJ, Wang KC, Nubling RB, Pierson RL, Chang MCF, Asbeck PM, Huang RT. A 6-b, 4 GSa/s GaAs HBT ADC Ieee Journal of Solid-State Circuits. 30: 1109-1118. DOI: 10.1109/4.466071  0.296
2009 Farcich NJ, Asbeck PM. De-embedding parasitic components from propagation constant calculations Aeu - International Journal of Electronics and Communications. 63: 287-293. DOI: 10.1016/J.Aeue.2008.01.011  0.295
2006 Farcich NJ, Asbeck PM. A three-dimensional transmission line with coplanar waveguide features Microwave and Optical Technology Letters. 48: 2189-2192. DOI: 10.1002/Mop.21881  0.292
2016 Min J, Wang LD, Wu J, Asbeck PM. Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors Ieee Journal of the Electron Devices Society. 4: 416-423. DOI: 10.1109/Jeds.2016.2614792  0.29
1977 Asbeck P. Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures Journal of Applied Physics. 48: 820-822. DOI: 10.1063/1.323633  0.287
1986 Chang MF, Asbeck PM, Wang KC, Sullivan GJ, Miller DL. AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE Electronics Letters. 22: 1173-1174.  0.287
1997 Li NY, Hsin YM, Bi WG, Asbeck PM, Tu CW. In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic Applied Physics Letters. 70: 2589-2591. DOI: 10.1063/1.119087  0.286
1997 Hsin YM, Li NY, Tu CW, Asbeck PM. In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications Materials Research Society Symposium - Proceedings. 448: 87-92. DOI: 10.1557/Proc-448-87  0.285
1997 Asbeck PM, Yu ET, Lau SS, Sullivan GJ, Hove JV, Redwing J. Piezoelectric charge densities in AlGaN/GaN HFETs Electronics Letters. 33: 1230-1231. DOI: 10.1049/El:19970843  0.277
1983 Miller DL, Asbeck PM, Anderson RJ, Eisen FH. (GaAl)As/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASE Electronics Letters. 19: 367-368.  0.275
2001 Zhang X, Larson LE, Asbeck PM. Calibration scheme for LINC transmitter Electronics Letters. 37: 317-318. DOI: 10.1049/El:20010209  0.274
1999 Michel A, Hanser D, Davis R, Qiao D, Lau S, Yu L, Sun W, Asbeck P. Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures Mrs Proceedings. 595. DOI: 10.1557/S1092578300004828  0.271
2001 Asbeck PM, Nakamura T. Bipolar transistor technology: past and future directions Ieee Transactions On Electron Devices. 48: 2455-2456. DOI: 10.1109/Ted.2001.960367  0.271
2012 Moon JS, Antcliffe M, Seo HC, Curtis D, Lin S, Schmitz A, Milosavljevic I, Kiselev AA, Ross RS, Gaskill DK, Campbell PM, Fitch RC, Lee KM, Asbeck P. Ultra-low resistance ohmic contacts in graphene field effect transistors Applied Physics Letters. 100. DOI: 10.1063/1.4719579  0.269
2015 Liu Y, Liu G, Asbeck PM. Frequency quadrupling transmitter architecture with digital predistortion for high-order modulation signal transmission Ieee Radio and Wireless Symposium, Rws. 2015: 215-217. DOI: 10.1109/RWS.2015.7129771  0.267
2020 Leung V, Stambaugh M, Abbasi S, Asbeck P, Gough D, Makale M, Murphy KT. A Compact Battery-Powered rTMS Prototype. Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual International Conference. 2020: 3852-3855. PMID 33018841 DOI: 10.1109/EMBC44109.2020.9176533  0.267
2005 Draxler P, Deng J, Kimball D, Langmore I, Asbeck PM. Memory effect evaluation and predistortion of power amplifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 1549-1552. DOI: 10.1109/MWSYM.2005.1516993  0.266
1996 Hanington G, Chang CE, Zampardi PJ, Asbeck PM. Thermal effects in HBT emitter resistance extraction Electronics Letters. 32: 1515-1516. DOI: 10.1049/El:19961017  0.266
2014 Lee K, Moon J, Oh T, Kim S, Asbeck P. Analysis of Heat Dissipation of Epitaxial Graphene Devices on SiC Solid-State Electronics. 101: 44-49. DOI: 10.1016/J.Sse.2014.06.014  0.266
2013 Moon JS, Seo HC, Stratan F, Antcliffe M, Schmitz A, Ross RS, Kiselev AA, Wheeler VD, Nyakiti LO, Gaskill DK, Lee KM, Asbeck PM. Lateral graphene heterostructure field-effect transistor Ieee Electron Device Letters. 34: 1190-1192. DOI: 10.1109/Led.2013.2270368  0.264
2021 Asbeck P, Alluri S, Leung V, Stambaugh M, Abbasi S, Makale M. A Compact Circuit for Boosting Electric Field Intensity in Repetitive Transcranial Magnetic Stimulation (rTMS). Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual International Conference. 2021: 6458-6464. PMID 34892590 DOI: 10.1109/EMBC46164.2021.9631054  0.262
2015 Lee K, Asbeck P. Numerical study of inhomogeneity effects on Hall measurements of graphene films Solid-State Electronics. 106: 34-43. DOI: 10.1016/J.Sse.2014.12.016  0.259
2003 Draxler P, Langmore I, Hung TP, Asbeck PM. Time domain characterization of power amplifiers with memory effects Ieee Mtt-S International Microwave Symposium Digest. 2: 803-806.  0.259
1984 Asbeck PM, Miller DL, Anderson RJ, Hou LD, Deming R, Eisen F. Nonthreshold Logic Ring Oscillators Implemented with GaAs/(GaAl)as Heterojunction Bipolar Transistors Ieee Electron Device Letters. 5: 181-183. DOI: 10.1109/EDL.1984.25876  0.255
2014 Kerr AJ, Chagarov E, Gu S, Kaufman-Osborn T, Madisetti S, Wu J, Asbeck PM, Oktyabrsky S, Kummel AC. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. The Journal of Chemical Physics. 141: 104702. PMID 25217942 DOI: 10.1063/1.4894541  0.253
1982 Asbeck PM, Miller DL, Asatourian R, Kirkpatrick CG. Numerical Simulation of GaAs/GaAlAs Heterojunction Bipolar Transistors Ieee Electron Device Letters. 3: 403-406. DOI: 10.1109/EDL.1982.25615  0.25
2009 Park SH, Thielemann P, Asbeck P, Bandaru PR. Enhanced dielectric constants and shielding effectiveness of, uniformly dispersed, functionalized carbon nanotube composites Applied Physics Letters. 94. DOI: 10.1063/1.3156032  0.249
1999 Shi C, Asbeck PM, Yu ET. Piezoelectric polarization associated with dislocations in wurtzite GaN Applied Physics Letters. 74: 573-575. DOI: 10.1063/1.123149  0.247
1993 Ho MC, Chin TP, Tu CW, Asbeck PM. Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy Journal of Applied Physics. 74: 2128-2130. DOI: 10.1063/1.354739  0.246
2014 Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM. Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Applied Surface Science. 317: 1022-1027. DOI: 10.1016/J.Apsusc.2014.09.028  0.244
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. HIGH-SPEED CIRCUITS FOR LIGHTWAVE COMMUNICATION SYSTEMS IMPLEMENTED WITH (ALGA)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS . 142-145.  0.244
2005 Li JC, Hussain T, Hitko DA, Asbeck PM, Sokolich M. Characterization and modeling of thermal effects in sub-micron InP DHBTs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 65-68.  0.24
1993 Asbeck PM, Wang KC, Chang FMC, Sullivan GJ, Cheung DT. GaAs-Based Heterojunction Bipolar Transistors for Very High Performance Electronic Circuits Proceedings of the Ieee. 81: 1709-1726. DOI: 10.1109/5.248960  0.239
2014 Nakatani T, Gheidi H, Leung VW, Kimball DF, Asbeck PM. Signal generation algorithm for digital polar transmitters with reduced receive band noise Pawr 2014 - Proceedings: 2014 Ieee Topical Conference On Power Amplifiers For Wireless and Radio Applications. 70-72. DOI: 10.1109/PAWR.2014.6825738  0.239
2005 Wittig JH, Ryan AF, Asbeck PM. A reusable microfluidic plate with alternate-choice architecture for assessing growth preference in tissue culture. Journal of Neuroscience Methods. 144: 79-89. PMID 15848242 DOI: 10.1016/J.Jneumeth.2004.10.010  0.23
1982 Asbeck PM, Miller DL, Petersen WC, Kirkpatrick CG. GaAs/GaAlAs Heterojunction Bipolar Transistors with Cutoff Frequencies Above 10 GHz Ieee Electron Device Letters. 3: 366-368. DOI: 10.1109/EDL.1982.25602  0.225
1983 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. EMITTER-COUPLED LOGIC CIRCUITS IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS Technical Digest - Gaas Ic Symposium (Gallium Arsenide Integrated Circuit). 170-173.  0.215
2002 Keyzer J, Uang R, Sugiyama Y, Iwamoto M, Galton I, Asbeck PM. Generation of RF pulsewidth modulated microwave signals using delta-sigma modulation Ieee Mtt-S International Microwave Symposium Digest. 1: 397-400.  0.212
1985 Agarwal KK, Thompson WJ, Asbeck PM. PHASE-NOISE BEHAVIOUR OF FREQUENCY DIVIDERS IMPLEMENTED WITH GaAs HETEROJUNCTION BIPOLAR TRANSISTORS Electronics Letters. 21: 1005-1006.  0.208
2017 Ma R, Teo KH, Shinjo S, Yamanaka K, Asbeck PM. A GaN PA for 4G LTE-Advanced and 5G: Meeting the Telecommunication Needs of Various Vertical Sectors Including Automobiles, Robotics, Health Care, Factory Automation, Agriculture, Education, and More Ieee Microwave Magazine. 18: 77-85. DOI: 10.1109/Mmm.2017.2738498  0.205
1979 Günter P, Asbeck PM, Kurtz SK. Second-harmonic generation with Ga1-xAlxAs lasers and KNbO3 crystals Applied Physics Letters. 35: 461-463. DOI: 10.1063/1.91169  0.205
1987 Wang KC, Asbeck PM, Chang MF, Sullivan GJ, Miller DL. A 20-GHz Frequency Divider Implemented with Heterojunction Bipolar Transistors Ieee Electron Device Letters. 8: 383-385. DOI: 10.1109/Edl.1987.26668  0.205
1984 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers Ieee Electron Device Letters. 5: 310-312. DOI: 10.1109/EDL.1984.25927  0.199
1993 Chang CE, Asbeck PM, Tran LT, Streit DC, Oki AK. Novel HBT structure for high ft at low current density Technical Digest - International Electron Devices Meeting. 795-798.  0.199
1984 Chang MF, Lee CP, Asbeck PM, Vahrenkamp RP, Kirkpatrick CG. Role of the piezoelectric effect in device uniformity of GaAs integrated circuits Applied Physics Letters. 45: 279-281. DOI: 10.1063/1.95172  0.198
1986 Chang MF, Asbeck PM, Miller DL, Wang KC. GaAs/(GaA1)As Heterojunction Bipolar Transistors Using a Self-Aligned Substitutional Emitter Process Ieee Electron Device Letters. 7: 8-10. DOI: 10.1109/Edl.1986.26274  0.187
2001 Brar B, Sullivan GJ, Asbeck PM. Herb's bipolar transistors Ieee Transactions On Electron Devices. 48: 2473-2476. DOI: 10.1109/16.960370  0.187
1983 Kirkpatrick CG, Chen RT, Holmes DE, Elliott KR, Asbeck PM. SUBSTRATE MATERIALS FOR GaAs INTEGRATED CIRCUITS Conference On Solid State Devices and Materials. 145-148.  0.186
1992 Bagheri M, Wang K, Chang M, Nubling R, Asbeck P, Chen A. 11.6-GHz 1:4 regenerating demultiplexer with bit-rotation control and 6.1-GHz auto-latching phase-aligner ICs using AlGaAs/GaAs HBT technology Ieee Journal of Solid-State Circuits. 27: 1787-1793. DOI: 10.1109/4.173106  0.186
1983 Harris JS, Asbeck PM, Miller DL. (INVITED) HETEROJUNCTION BIPOLAR TRANSISTORS Proceedings of the Conference On Solid State Devices. 375-380. DOI: 10.7567/JJAPS.22S1.375  0.183
1984 Asbeck PM, Miller DL. RECENT ADVANCES IN GaAs/(Ga,Al)As HETEROJUNCTION BIPOLAR TRANSISTORS Conference On Solid State Devices and Materials. 343-346.  0.177
2001 Zhang X, Nanawa P, Larson LE, Asbeck PM. A gain/phase imbalance minimization technique for LINC transmitter Ieee Mtt-S International Microwave Symposium Digest. 2: 801-804.  0.175
1983 Miller DL, Asbeck PM, Anderson RJ, Eisen FH. IIA-1 (GaAl)As/GaAs Heterojunction Dipolar Transistors with Graded Composition in the Base Ieee Transactions On Electron Devices. 30: 1565-1566. DOI: 10.1109/T-ED.1983.21340  0.172
1977 Daniele JJ, Cammack DA, Asbeck PM. Cw GaAs/GaAlAs DH lasers grown by Peltier-induced LPE Journal of Applied Physics. 48: 914-916. DOI: 10.1063/1.323707  0.172
1979 Asbeck PM, Cammack DA, Daniele JJ, Klebanoff V. Lateral Mode Behavior in Narrow Stripe Lasers Ieee Journal of Quantum Electronics. 15: 727-733. DOI: 10.1109/JQE.1979.1070078  0.172
1978 Asbeck PM, Cammack DA, Daniele JJ. Non-Gaussian fundamental mode patterns in narrow-stripe-geometry lasers Applied Physics Letters. 33: 504-506. DOI: 10.1063/1.90415  0.166
1984 Asbeck PM, Lee CP, Chang MCF. Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics Ieee Transactions On Electron Devices. 31: 1377-1380. DOI: 10.1109/T-ED.1984.21719  0.166
2006 Li MY, Deng JX, Larson LE, Asbeck PM. Nonideal effects of reconstruction filter and I/Q imbalance in digital predistortion Proceedings - 2006 Ieee Radio and Wireless Symposium. 2006: 259-262.  0.165
1987 Miller DL, Asbeck PM. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes Journal of Crystal Growth. 81: 368-372. DOI: 10.1016/0022-0248(87)90418-0  0.164
2004 Li MY, Galton I, Larson LE, Asbeck PM. Correlation techniques for estimation of amplifier nonlinearity Proceedings - 2004 Ieee Radio and Wireless Conference, Rawcon. 179-182.  0.16
1986 Sullivan GJ, Asbeck PM, Chang MF, Miller DL, Wang KC. IIIA-6 High-Frequency Performance of AlGaAs/InGaAs/GaAs Strained Layer Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 33: 1845-1846. DOI: 10.1109/T-ED.1986.22778  0.157
2003 Finkelstein H, Asbeck PM, Esener S. Architecture and analysis of a self-assembled 3D array of carbon nanotubes and molecular memories Proceedings of the Ieee Conference On Nanotechnology. 1: 441-444. DOI: 10.1109/NANO.2003.1231813  0.153
2003 Li JC, Asbeck PM, Sokolich M, Hussain T, Hitko D, Fields C. Effects of device design on the thermal properties of InP-based HBTs Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 205-206. DOI: 10.1109/ISCS.2003.1239977  0.152
1986 Sullivan GJ, Asbeck PM, Chang MF, Miller DL, Wang KC. AlGaAs/InGaAs/GaAs STRAINED-LAYER HETEROJUNCTION BIPOLAR TRANSISTORS BY MOLECULAR BEAM EPITAXY Electronics Letters. 22: 419-421.  0.149
2008 Farcich NJ, Salonen J, Asbeck PM. Single-length method used to determine the dielectric constant of polydimethylsiloxane Ieee Transactions On Microwave Theory and Techniques. 56: 2963-2971. DOI: 10.1109/TMTT.2008.2007182  0.133
1985 Chang MF, Asbeck PM, Miller DL, Wang KC. VA-7 Self-Aligned Substitutional Emitter Process for GaAs/(GaAl)As Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 32: 2547. DOI: 10.1109/T-Ed.1985.22359  0.133
2008 Rodwell MJW, Wistey M, Singisetti U, Burek G, Gossard A, Stemmer S, Engel-Herbert R, Hwang Y, Zheng Y, Van De Walle C, Asbeck P, Taur Y, Kummel A, Yu B, Wang D, et al. Technology development & design for 22 nm InGaAs/InP-channel MOSFETs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703065  0.131
1991 Runge K, Gimlett J, Nubling R, Wang K, Chang M, Pierson R, Asbeck P. 20 Gbit/s AlGaAs/GaAs HBT decision circuit IC Electronics Letters. 27: 2376. DOI: 10.1049/el:19911471  0.128
2000 Michel A, Hanser D, Davis R, Qiao D, Lau S, Yu L, Sun W, Asbeck P. Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures Mrs Internet Journal of Nitride Semiconductor Research. 5: 605-611. DOI: 10.1557/s1092578300004828  0.127
1983 Asbeck PM, Miller DL, Babcock EJ, Kirkpatrick CG. Application of Thermal Pulse Annealing to Ion-Implanted GaAlAs/GaAs Heterojunction Bipolar Transistors Ieee Electron Device Letters. 4: 81-84. DOI: 10.1109/EDL.1983.25656  0.126
2008 Yu ET, Asbeck PM. Local polarization effects in nitride heterostructures and devices Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 217-264. DOI: 10.1007/978-0-387-68319-5_5  0.126
1982 Asbeck PM, Miller DL, Petersen WC, Kirkpatrick CG. VIB-1 (Ga,Al) As/GaAs Heterojunction Bipolar Transistors: Design Considerations and Experimental Results Ieee Transactions On Electron Devices. 29: 1706-1707. DOI: 10.1109/T-ED.1982.21004  0.122
2024 Abbasi S, Alluri S, Leung V, Asbeck P, Makale MT. Design and Validation of Miniaturized Repetitive Transcranial Magnetic Stimulation (rTMS) Head Coils. Sensors (Basel, Switzerland). 24. PMID 38475120 DOI: 10.3390/s24051584  0.12
2002 Qiao D, Yu LS, Jia L, Asbeck PM, Lau SS, Haynes TE. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 80: 992-994. DOI: 10.1063/1.1447591  0.116
1984 Chen RT, Holmes DE, Asbeck PM. Correlation of threshold voltage of implanted field-effect transistors and carbon in GaAs substrates Applied Physics Letters. 45: 459-461. DOI: 10.1063/1.95215  0.113
1985 Miller DL, Asbeck PM. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy Journal of Applied Physics. 57: 1816-1822. DOI: 10.1063/1.334409  0.111
1992 Runge K, Daniel D, Standley R, Gimlett J, Nubling R, Pierson R, Beccue S, Wang K, Sheng N, Chang M, Chen D, Asbeck P. AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems Ieee Journal of Solid-State Circuits. 27: 1332-1341. DOI: 10.1109/4.156434  0.102
1984 Hasegawa H, Abe M, Asbeck PM, Higashizaka A, Kato Y, Ohmori M. NO TITLE Conference On Solid State Devices and Materials. 413-414.  0.101
1984 Asbeck PM, Miller DL, Anderson RJ, Eisen FH. VA-2 GaAs/(Ga,Al)As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers- Ieee Transactions On Electron Devices. 31: 1979. DOI: 10.1109/T-ED.1984.21871  0.094
2005 O'Sullivan T, York RA, Noren B, Asbeck PM. Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters Ieee Transactions On Microwave Theory and Techniques. 53: 106-113. DOI: 10.1109/TMTT.2004.839900  0.092
2015 Palmer WD, Abdomerovic I, Asbeck PM, Larocca T, Raman S. Advancing silicon mm-wave transmitter ICs for satellite communications Ieee Mtt-S International Microwave and Rf Conference 2014, Imarc 2014 - Collocated With Intemational Symposium On Microwaves, Ism 2014. 49-52. DOI: 10.1109/IMaRC.2014.7038967  0.088
1980 Asbeck PM, Evans CA, Tandon J, Deline VR, Welch BM. Effects of Cr Redistribution on Electrical Characteristics of Ion-Implanted Semi-Insulating GaAs Ieee Electron Device Letters. 1: 35-37. DOI: 10.1109/EDL.1980.25221  0.083
2011 Lee KM, Ohoka A, Asbeck PM. Charge transfer region at the edge of metal contacts on graphene and its impact on contact resistance measurement 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135256  0.067
1991 Runge K, Gimlett J, Nubling R, Wang K, Chang M, Pierson R, Asbeck P. 27 Gbit/s AlGaAs/GaAs HBT 1:2 regenerating demultiplexer IC Electronics Letters. 27: 2389. DOI: 10.1049/el:19911478  0.065
1981 Wang KL, Li CP, Asbeck PM, Kirkpatrick CG. INVESTIGATION OF DEFECT CONCENTRATION DISTRIBUTIONS IN ION-IMPLANTED AND ANNEALED GaAs Mat Res Soc Symp Proc. 2: 487-493.  0.044
1979 Asbeck PM, Cammack DA, Daniele JJ, Lou D, Heemskerk JPJ, Kleuters WJ, Ophey WH. High‐density optical recording with (Ga,Al)As DH lasers Applied Physics Letters. 34: 835-837. DOI: 10.1063/1.90684  0.026
Hide low-probability matches.