| Year |
Citation |
Score |
| 2013 |
Zhao Z, Theodore ND, Vemuri RNP, Lu W, Lau SS, Lanz A, Alford TL. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4858404 |
0.447 |
|
| 2013 |
Zhao Z, David Theodore N, Vemuri RNP, Das S, Lu W, Lau SS, Alford TL. Effective dopant activation via low temperature microwave annealing of ion implanted silicon Applied Physics Letters. 103. DOI: 10.1063/1.4829153 |
0.429 |
|
| 2013 |
Bickford JR, Yu PKL, Lau SS. Thermal and microwave characterization of GaAs to Si metal-bonded structures Journal of Applied Physics. 114. DOI: 10.1063/1.4824063 |
0.349 |
|
| 2012 |
Doran C, Chen W, Alford TL, Lau SS. A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives Applied Physics Letters. 100. DOI: 10.1063/1.3684970 |
0.555 |
|
| 2011 |
Chen W, Kuech TF, Lau SS. Ion-cut transfer of InP-based high electron mobility transistors Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3591110 |
0.591 |
|
| 2011 |
Chen W, Doran C, Govea D, Alford TL, Lau SS. Stress-induced transfer of ultrathin silicon layers onto flexible substrates Electrochemical and Solid-State Letters. 14: H171-H173. DOI: 10.1149/1.3548508 |
0.599 |
|
| 2011 |
Vemuri RNP, Gadre MJ, Theodore ND, Chen W, Lau SS, Alford TL. Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon Journal of Applied Physics. 110: 34907. DOI: 10.1063/1.3622287 |
0.607 |
|
| 2011 |
Chen W, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3593006 |
0.602 |
|
| 2010 |
Chen W, Chen WV, Lee K, Lau SS, Kuech TF. High quality InP layers transferred by cleavage plane assisted ion-cutting Electrochemical and Solid-State Letters. 13: H268-H270. DOI: 10.1149/1.3428748 |
0.575 |
|
| 2009 |
Chen W, Bandaru P, Tang CW, Lau KM, Kuech TF, Lau SS. InP Layer Transfer with Masked Implantation Electrochemical and Solid-State Letters. 12: H149. DOI: 10.1149/1.3078487 |
0.601 |
|
| 2009 |
Chen W, Zhang A, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Feasibility study of ion-cut InP photoconductor devices on glass substrates Applied Physics Express. 2. DOI: 10.1143/Apex.2.022201 |
0.58 |
|
| 2009 |
Chen P, Chen WV, Yu PKL, Tang CW, Lau KM, Mawst L, Paulson C, Kuech TF, Lau SS. Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon Applied Physics Letters. 94. DOI: 10.1063/1.3062848 |
0.425 |
|
| 2008 |
Dayeh SA, Chen P, Jing Y, Yu ET, Lau SS, Wang D. Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation Applied Physics Letters. 93: 203109. DOI: 10.1063/1.3013566 |
0.432 |
|
| 2008 |
Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937409 |
0.59 |
|
| 2008 |
Chen P, Di Z, Nastasi M, Bruno E, Grimaldi MG, Theodore ND, Lau SS. Effects of hydrogen implantation temperature on InP surface blistering Applied Physics Letters. 92: 202107. DOI: 10.1063/1.2926682 |
0.381 |
|
| 2008 |
Chen P, Jing Y, Lau SS, Xu D, Mawst L, Alford TL, Paulson C, Kuech TF. High crystalline-quality III-V layer transfer onto Si substrate Applied Physics Letters. 92. DOI: 10.1063/1.2890494 |
0.488 |
|
| 2007 |
Thompson DC, Alford TL, Mayer JW, Höchbauer T, Lee JK, Nastasi M, Lau SS, Theodore ND, Chu PK. Microwave enhanced ion-cut silicon layer transfer Journal of Applied Physics. 101. DOI: 10.1063/1.2737387 |
0.417 |
|
| 2007 |
Chen W, Chen P, Jing Y, Lau SS, Kuech TF, Liu J, Wang X, Chu W. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process Applied Physics Letters. 90: 52114. DOI: 10.1063/1.2450665 |
0.593 |
|
| 2006 |
Bickford JR, Qiao D, Yu PKL, Lau SS. Electrical characterization of GaAs metal bonded to Si Applied Physics Letters. 89. DOI: 10.1063/1.2219980 |
0.413 |
|
| 2006 |
Shao L, Lee JK, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2204330 |
0.433 |
|
| 2006 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. H-induced platelet and crack formation in hydrogenated epitaxial Si/Si 0.98B 0.02/Si structures Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163992 |
0.421 |
|
| 2005 |
Shao L, Lin Y, Swadener JG, Lee JK, Jia QX, Wang YQ, Nastasi M, Thompson PE, Theodore ND, Alford TL, Mayer JW, Chen P, Lau SS. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2146211 |
0.427 |
|
| 2005 |
Thompson DC, Alford TL, Mayer JW, Hochbauer T, Nastasi M, Lau SS, Theodore ND, Henttinen K, Suni L, Chu PK. Microwave-cut silicon layer transfer Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2135395 |
0.448 |
|
| 2005 |
Chen P, Lau SS, Chu PK, Henttinen K, Suni T, Suni I, Theodore ND, Alford TL, Mayer JW, Shao L, Nastasi M. Silicon layer transfer using plasma hydrogenation Applied Physics Letters. 87. DOI: 10.1063/1.2048811 |
0.449 |
|
| 2005 |
Shao L, Lin Y, Lee JK, Jia QX, Wang Y, Nastasi M, Thompson PE, Theodore ND, Chu PK, Alford TL, Mayer JW, Chen P, Lau SS. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation Applied Physics Letters. 87. DOI: 10.1063/1.2032602 |
0.464 |
|
| 2005 |
Chen P, Chu PK, Höchbauer T, Lee JK, Nastasi M, Buca D, Mantl S, Loo R, Caymax M, Alford T, Mayer JW, Theodore ND, Cai M, Schmidt B, Lau SS. Investigation of plasma hydrogenation and trapping mechanism for layer transfer Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852087 |
0.443 |
|
| 2004 |
Lu F, Bickford J, Novotny C, Yu PKL, Lau SS, Henttinen K, Suni T, Suni I. Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films Journal of Vacuum Science & Technology B. 22: 2691-2697. DOI: 10.1116/1.1819926 |
0.418 |
|
| 2004 |
Chen P, Chu PK, Höchbauer T, Nastasi M, Buca D, Mantl S, Theodore ND, Alford TL, Mayer JW, Loo R, Caymax M, Cai M, Lau SS. Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer Applied Physics Letters. 85: 4944-4946. DOI: 10.1063/1.1824171 |
0.393 |
|
| 2004 |
Lee JK, Nastasi M, Theodore ND, Smalley A, Alford TL, Mayer JW, Cai M, Lau SS. Effects of hydrogen implantation temperature on ion-cut of silicon Journal of Applied Physics. 96: 280-288. DOI: 10.1063/1.1755851 |
0.481 |
|
| 2004 |
Nastasi M, Höchbauer T, Verda RD, Misra A, Lee JK, Mayer JW, Lau SS. Using ion beam analysis in determining the mechanisms of cleavage in hydrogen ion implanted Si Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 604-610. DOI: 10.1016/J.Nimb.2004.01.128 |
0.427 |
|
| 2004 |
Höchbauer T, Misra A, Nastasi M, Henttinen K, Suni T, Suni I, Lau SS, Ensinger W. Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 216: 257-263. DOI: 10.1016/J.Nimb.2003.11.043 |
0.458 |
|
| 2003 |
Lu F, Qiao D, Cai M, Yu PKL, Lau SS, Fu RKY, Hung LS, Li CP, Chu PK, Chien HC, Liou Y. Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation Journal of Vacuum Science & Technology B. 21: 2109-2113. DOI: 10.1116/1.1609477 |
0.46 |
|
| 2003 |
Yu LS, Jia L, Qiao D, Lau SS, Li J, Lin JY, Jiang HX. The origins of leaky characteristics of Schottky diodes on p-GaN Ieee Transactions On Electron Devices. 50: 292-296. DOI: 10.1109/Ted.2002.808558 |
0.352 |
|
| 2003 |
Yu LS, Mages P, Qiao D, Jia L, Yu PKL, Lau SS, Suni T, Henttinen K, Suni I. Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers Applied Physics Letters. 82: 916-918. DOI: 10.1063/1.1544063 |
0.362 |
|
| 2003 |
Henttinen K, Suni T, Nurmela A, Luoto HVA, Suni I, Airaksinen V-, Karirinne S, Cai M, Lau SS. Transfer of thin Si layers by cold and thermal ion cutting Journal of Materials Science: Materials in Electronics. 14: 299-303. DOI: 10.1023/A:1023963626033 |
0.498 |
|
| 2003 |
Jerez-Hanckes CF, Qiao D, Lau SS. A study of Si wafer bonding via methanol capillarity Materials Chemistry and Physics. 77: 751-754. DOI: 10.1016/S0254-0584(02)00140-2 |
0.373 |
|
| 2002 |
Cai M, Qiao D, Yu LS, Lau SS, Li CP, Hung LS, Haynes TE, Henttinen K, Suni I, Poon VMC, Marek T, Mayer JW. Single crystal Si layers on glass formed by ion cutting Journal of Applied Physics. 92: 3388-3392. DOI: 10.1063/1.1492017 |
0.506 |
|
| 2002 |
Qiao D, Yu LS, Jia L, Asbeck PM, Lau SS, Haynes TE. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 80: 992-994. DOI: 10.1063/1.1447591 |
0.349 |
|
| 2002 |
Höchbauer T, Nastasi M, Verda RD, Misra A, Henttinen K, Suni I, Lau SS, Mayer JW. The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 190: 592-597. DOI: 10.1016/S0168-583X(01)01306-4 |
0.425 |
|
| 2002 |
Henttinen K, Suni T, Nurmela A, Suni I, Lau SS, Höchbauer T, Nastasi M, Airaksinen V-. Cold ion-cutting of hydrogen implanted Si Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 190: 761-766. DOI: 10.1016/S0168-583X(01)01209-5 |
0.489 |
|
| 2001 |
Henttinen K, Suni T, Nurmela A, Airaksinen V, Suni I, Lau SS. Orientation and Boron Concentration Dependence of Si Layer Transfer by Mechanical Exfoliation Mrs Proceedings. 681. DOI: 10.1557/Proc-681-I9.1 |
0.417 |
|
| 2001 |
Qiao D, Jia L, Yu LS, Asbeck PM, Lau SS, Lim S-, Liliental-Weber Z, Haynes TE, Barner JB. Ta-based interface ohmic contacts to AlGaN/GaN heterostructures Journal of Applied Physics. 89: 5543-5546. DOI: 10.1063/1.1365431 |
0.379 |
|
| 2001 |
Zheng Y, Lau SS, Höchbauer T, Misra A, Verda R, He XM, Nastasi M, Mayer JW. Orientation dependence of blistering in H-implanted Si Journal of Applied Physics. 89: 2972-2978. DOI: 10.1063/1.1334921 |
0.433 |
|
| 2001 |
Höchbauer T, Misra A, Verda R, Zheng Y, Lau SS, Mayer JW, Nastasi M. The influence of ion-implantation damage on hydrogen-induced ion-cut Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 169-175. DOI: 10.1016/S0168-583X(00)00540-1 |
0.431 |
|
| 2000 |
Höchbauer T, Misra A, Verda R, Nastasi M, Mayer JW, Zheng Y, Lau SS. Hydrogen-implantation induced silicon surface layer exfoliation Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 80: 1921-1931. DOI: 10.1080/13642810008216514 |
0.411 |
|
| 2000 |
Henttinen K, Suni I, Lau SS. Erratum: “Mechanically induced Si layer transfer in hydrogen implanted Si wafers” [Appl. Phys. Lett. 76, 2370 (2000)] Applied Physics Letters. 77: 310-310. DOI: 10.1063/1.126960 |
0.446 |
|
| 2000 |
Henttinen K, Suni I, Lau SS. Mechanically induced Si layer transfer in hydrogen-implanted Si wafers Applied Physics Letters. 76: 2370-2372. DOI: 10.1063/1.126349 |
0.46 |
|
| 2000 |
Asbeck PM, Yu ET, Lau SS, Sun W, Dang X, Shi C. Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs Solid-State Electronics. 44: 211-219. DOI: 10.1016/S0038-1101(99)00226-9 |
0.314 |
|
| 2000 |
Zheng Y, Moran PD, Guan ZF, Lau SS, Hansen DM, Kuech TF, Haynes TE, Hoechbauer T, Nastasi M. Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding Journal of Electronic Materials. 29: 916-920. DOI: 10.1007/S11664-000-0181-6 |
0.475 |
|
| 1999 |
Michel A, Hanser D, Davis R, Qiao D, Lau S, Yu L, Sun W, Asbeck P. Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures Mrs Proceedings. 595. DOI: 10.1557/S1092578300004828 |
0.371 |
|
| 1999 |
Yu ET, Dang XZ, Asbeck PM, Lau SS, Sullivan GJ. Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures Journal of Vacuum Science & Technology B. 17: 1742-1749. DOI: 10.1116/1.590818 |
0.308 |
|
| 1999 |
Dang XZ, Welty RJ, Qiao D, Asbeck PM, Lau SS, Yu ET, Boutros KS, Redwing JM. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET Electronics Letters. 35: 602-603. DOI: 10.1049/El:19990282 |
0.367 |
|
| 1998 |
Lau SS. Metal - GaN contact technology Materials Research Society Symposium - Proceedings. 514: 449. DOI: 10.1557/Proc-514-449 |
0.347 |
|
| 1998 |
Zhao Y, Deng F, Lau SS, Tu CW. Effects of arsenic in gas-source molecular beam epitaxy Journal of Vacuum Science & Technology B. 16: 1297-1299. DOI: 10.1116/1.590004 |
0.309 |
|
| 1998 |
Wong SP, Peng Q, Cheung WY, Morton R, Lau SS. Effect of substrate temperature on precipitate coarsening and Co distribution in Si implanted by Co ions with a metal vapour vacuum arc ion source Semiconductor Science and Technology. 13: 895-899. DOI: 10.1088/0268-1242/13/8/012 |
0.413 |
|
| 1998 |
Yu LS, Liu QZ, Xing QJ, Qiao DJ, Lau SS, Redwing J. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes Journal of Applied Physics. 84: 2099-2104. DOI: 10.1063/1.368270 |
0.309 |
|
| 1998 |
Zeng Y, Alford TL, Zou YL, Amali A, Ullrich BM, Deng F, Lau SS. Texture and microstructural evolution of thin silver films in Ag/Ti bilayers Journal of Applied Physics. 83: 779-785. DOI: 10.1063/1.366758 |
0.337 |
|
| 1998 |
Yu LS, Xing QJ, Qiao D, Lau SS, Boutros KS, Redwing JM. Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure Applied Physics Letters. 73: 3917-3919. DOI: 10.1063/1.122935 |
0.314 |
|
| 1998 |
Ruvimov S, Liliental-Weber Z, Washburn J, Qiao D, Lau SS, Chu PK. Microstructure of Ti/Al ohmic contacts for n-AlGaN Applied Physics Letters. 73: 2582-2584. DOI: 10.1063/1.122512 |
0.408 |
|
| 1998 |
Yu ET, Dang XZ, Yu LS, Qiao D, Asbeck PM, Lau SS, Sullivan GJ, Boutros KS, Redwing JM. Schottky barrier engineering in III-V nitrides via the piezoelectric effect Applied Physics Letters. 73: 1880-1882. DOI: 10.1063/1.122312 |
0.365 |
|
| 1998 |
Yu LS, Qiao DJ, Xing QJ, Lau SS, Boutros KS, Redwing JM. Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates Applied Physics Letters. 73: 238-240. DOI: 10.1063/1.121767 |
0.304 |
|
| 1998 |
Liu QZ, Lau SS. A review of the metal-GaN contact technology Solid-State Electronics. 42: 677-691. DOI: 10.1016/S0038-1101(98)00099-9 |
0.324 |
|
| 1997 |
Zeng Y, Zou YL, Alford T, Deng F, Lau SS, Laursen T, Ullrich BM. Influence of underlayer and encapsulation process on texture in polycrystalline silver thin films Mrs Proceedings. 472: 203-208. DOI: 10.1557/Proc-472-203 |
0.313 |
|
| 1997 |
Amali AI, Mayer JW, Zeng Y, Zou YL, Alford T, Deng F, Lau SS. Tem Observations of AG-TI Bilayers After Thermal Aging Treatment in a Reducing Ambient Mrs Proceedings. 472: 197-202. DOI: 10.1557/Proc-472-197 |
0.389 |
|
| 1997 |
Huang JS, Huang SS, Tu K, Deng F, Lau SS, Cheng SL, Chen LJ. Kinetics Of Cu3Ge Formation And Reaction With Al Journal of Applied Physics. 82: 644-649. DOI: 10.1063/1.366291 |
0.344 |
|
| 1997 |
Zou YL, Alford TL, Zeng Y, Deng F, Lau SS, Laursen T, Amali AI, Ullrich BM. Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient Journal of Applied Physics. 82: 3321-3327. DOI: 10.1063/1.365641 |
0.443 |
|
| 1997 |
Deng F, Johnson RA, Asbeck PM, Lau SS, Dubbelday WB, Hsiao T, Woo J. Salicidation process using NiSi and its device application Journal of Applied Physics. 81: 8047-8051. DOI: 10.1063/1.365410 |
0.444 |
|
| 1997 |
Deng F, Ring KM, Guan Z, Lau SS, Dubbelday WB, Wang N, Fung K. Structural investigation of self-aligned silicidation on separation by implantation oxygen Journal of Applied Physics. 81: 8040-8046. DOI: 10.1063/1.365409 |
0.474 |
|
| 1997 |
Zeng Y, Zou YL, Alford T, Deng F, Lau SS, Laursen T, Ullrich BM. Texture and stress of Ag films in Ag/Ti, Ag/Cr bilayers, and self-encapsulated structures Journal of Applied Physics. 81: 7773-7777. DOI: 10.1063/1.365386 |
0.306 |
|
| 1997 |
Park M, Wang LC, Dufner DC, Deng F, Lau SS, Tan IH, Kish F. The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle Journal of Applied Physics. 81: 3138-3142. DOI: 10.1063/1.364320 |
0.45 |
|
| 1997 |
Yu ET, Sullivan GJ, Asbeck PM, Wang CD, Qiao D, Lau SS. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors Applied Physics Letters. 71: 2794-2796. DOI: 10.1063/1.120138 |
0.328 |
|
| 1997 |
Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally Stable Ptsi Schottky Contact On N-Gan Applied Physics Letters. 70: 1275-1277. DOI: 10.1063/1.118551 |
0.404 |
|
| 1996 |
Liu QZ, Smith KV, Yu ET, Lau SS, Perkins NR, Knech TF. On the epitaxy of metal films on GaN Mrs Proceedings. 449: 1079-1084. DOI: 10.1557/Proc-449-1079 |
0.313 |
|
| 1996 |
Wong SP, Peng Q, Cheung WY, Guo WS, Xu JB, Wilson IH, Hark SK, Morton R, Lau SS. Formation and Characteristics of CoSi 2 Layers Synthesized by Mevva Implantation Mrs Proceedings. 438: 307. DOI: 10.1557/Proc-438-307 |
0.377 |
|
| 1996 |
Bair AE, Alford T, Atzmon Z, Marcus SD, Doller DC, Morton R, Lau SS, Mayer JW. Cobalt and Titanium Metallization of SiGeC for Shallow Contacts Mrs Proceedings. 427: 529-533. DOI: 10.1557/Proc-427-529 |
0.469 |
|
| 1996 |
Wang LC, Hao PH, Cheng JY, Deng F, Lau SS. Ohmic contact formation mechanism of the Au/Ge/Pd/n‐GaAs system formed below 200 °C Journal of Applied Physics. 79: 4216-4220. DOI: 10.1063/1.361789 |
0.409 |
|
| 1996 |
Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, Geisz J, Kuech TF. Strain‐induced band‐gap modulation in GaAs/AlGaAs quantum‐well structure using thin‐film stressors Journal of Applied Physics. 79: 1763-1771. DOI: 10.1063/1.360966 |
0.304 |
|
| 1996 |
Liu QZ, Lau SS, Perkins NR, Kuech TF. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions Applied Physics Letters. 69: 1722-1724. DOI: 10.1063/1.118009 |
0.341 |
|
| 1996 |
Park MH, Wang LC, Cheng JY, Deng F, Lau SS, Palmstrøm CJ. Low resistance Zn3P2/InP heterostructure Ohmic contact to p-InP Applied Physics Letters. 68: 952-954. DOI: 10.1063/1.116109 |
0.346 |
|
| 1996 |
Guan ZF, Deng F, Liu QZ, Lau SS, Hewett CA. Ni-diamond interactions Materials Chemistry and Physics. 46: 230-232. DOI: 10.1016/S0254-0584(97)80018-1 |
0.44 |
|
| 1996 |
Csepregi L, Gyulai J, Lau SS. The early history of solid phase epitaxial growth Materials Chemistry and Physics. 46: 178-180. DOI: 10.1016/S0254-0584(97)80011-9 |
0.403 |
|
| 1996 |
Laursen T, Adams D, Alford TL, Tu K, Deng F, Morton R, Lau SS. Encapsulation of silver by nitridation of AgTi alloy/bilayer structures Thin Solid Films. 411-416. DOI: 10.1016/S0040-6090(96)08964-X |
0.386 |
|
| 1996 |
Morton R, Deng F, Lau SS, Xin S, Furdyna JK, Hutchins JW, Skromme BJ, Mayer JW. Ion beam mixing in ZnSe/CdZnSe strained layer structures Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 118: 704-708. DOI: 10.1016/0168-583X(96)00330-8 |
0.408 |
|
| 1995 |
Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Redwing JM, Kuech TF. Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology Journal of Applied Physics. 78: 236-244. DOI: 10.1063/1.360657 |
0.326 |
|
| 1995 |
Park MH, Yeh CL, Wang LC, Deng F, Liu QZ, Clawson AR, Lau SS. Defect-assisted ohmic contacts on p-InP Journal of Applied Physics. 77: 2056-2060. DOI: 10.1063/1.358845 |
0.39 |
|
| 1995 |
Wang LC, Park M, Deng F, Clawson A, Lau SS, Hwang DM, Palmstro CJ. Ge/Pd (Zn) Ohmic contact scheme on p‐InP based on the solid phase regrowth principle Applied Physics Letters. 66: 3310-3312. DOI: 10.1063/1.113740 |
0.363 |
|
| 1995 |
Yu LS, Guan ZF, Liu QZ, Lau SS. Silicon on insulator photoelastic optical waveguide and polarizer Applied Physics Letters. 66: 2016-2018. DOI: 10.1063/1.113677 |
0.32 |
|
| 1995 |
Liu QZ, Jiang XS, Yu LS, Guan ZF, Yu PKL, Lau SS. A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators Journal of Electronic Materials. 24: 991-997. DOI: 10.1007/Bf02652972 |
0.349 |
|
| 1994 |
Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources Journal of Applied Physics. 76: 1585-1591. DOI: 10.1063/1.357737 |
0.408 |
|
| 1994 |
Pappert SA, Xia W, Jiang XS, Guan ZF, Zhu B, Liu QZ, Yu LS, Clawson AR, Yu PKL, Lau SS. Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect Journal of Applied Physics. 75: 4352-4361. DOI: 10.1063/1.355978 |
0.365 |
|
| 1994 |
Haynes TE, Morton R, Lau SS. Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+ Applied Physics Letters. 64: 991-993. DOI: 10.1063/1.110928 |
0.397 |
|
| 1994 |
Jiang XS, Liu QZ, Yu LS, Guan ZF, Xia W, Pappert SA, Yu PKL, Lau SS. Planar InGaAsP/InP photoelastic waveguides with low propagation loss Materials Chemistry and Physics. 38: 195-198. DOI: 10.1016/0254-0584(94)90012-4 |
0.357 |
|
| 1994 |
Fu S-, Chin TP, Zhu B, Tu CW, Lau SS, Asbeck PM. Electrical properties of He + ion-implanted GaInP Journal of Electronic Materials. 23: 403-407. DOI: 10.1007/Bf02671221 |
0.409 |
|
| 1993 |
Yu LS, Guan ZF, Deng F, Liu QZ, Pappert SA, Yu PKL, Lau SS, Redwing J, Geisz J, Kuech TF, Kattelus H, Suni I. Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures Mrs Proceedings. 326: 251. DOI: 10.1557/Proc-326-251 |
0.399 |
|
| 1993 |
Yu LS, Guan ZF, Liu QZ, Deng F, Pappert SA, Yu PKL, Lau SS, Florez LT, Harbison JP. Photoelastic AlGaAs/GaAs waveguide polarizer Applied Physics Letters. 63: 2047-2049. DOI: 10.1063/1.110587 |
0.343 |
|
| 1993 |
Yu LS, Guan ZF, Xia W, Liu QZ, Deng F, Pappert SA, Yu PKL, Lau SS, Florez LT, Harbison JP. Photoelastic waveguides formed by interfacial reactions Applied Physics Letters. 62: 2944-2946. DOI: 10.1063/1.109204 |
0.423 |
|
| 1993 |
Haynes TE, Morton R, Lau SS. Lattice damage in ion-implanted compound semiconductors and its effect on electrical activation Materials Research Society Symposium Proceedings. 300: 311-321. |
0.302 |
|
| 1992 |
Schwarz SA, Sands T, Bhat R, Koza M, Pudensi MAA, Wang LC, Lau SS. Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry Mrs Proceedings. 260. DOI: 10.1557/Proc-260-525 |
0.383 |
|
| 1992 |
Pappert SA, Xia W, Zhu B, Clawson AR, Guan ZF, Yu PKL, Lau SS. Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures Journal of Applied Physics. 72: 1306-1311. DOI: 10.1063/1.351737 |
0.409 |
|
| 1992 |
Xia W, Pappert SA, Zhu B, Clawson AR, Yu PKL, Lau SS, Poker DB, White CW, Schwarz SA. Ion mixing of III-V compound semiconductor layered structures Journal of Applied Physics. 71: 2602-2610. DOI: 10.1063/1.351079 |
0.41 |
|
| 1992 |
Xia W, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Schwarz SA, Pudensi MAA, Florez LT, Harbison JP. Planar, low‐loss optical waveguides fabricated by solid‐phase regrowth Applied Physics Letters. 61: 1269-1271. DOI: 10.1063/1.107614 |
0.31 |
|
| 1992 |
Wang LC, Li YZ, Kappes M, Lau SS, Hwang DM, Schwarz SA, Sands T. The Si/Pd(Si,Ge) ohmic contact on n‐GaAs Applied Physics Letters. 60: 3016-3018. DOI: 10.1063/1.106794 |
0.427 |
|
| 1992 |
Schwarz SA, Pudensi MAA, Sands T, Gmitter TJ, Bhat R, Koza M, Wang LC, Lau SS. Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP Applied Physics Letters. 60: 1123-1125. DOI: 10.1063/1.106428 |
0.469 |
|
| 1992 |
Chow JT, Zhu B, Lau SS, Cros A. Thermal diffusion and ion mixing of the Cu/PPQ system Materials Chemistry and Physics. 32: 386-389. DOI: 10.1016/0254-0584(92)90185-B |
0.327 |
|
| 1991 |
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme onp‐GaAs Journal of Applied Physics. 69: 3124-3129. DOI: 10.1063/1.348579 |
0.357 |
|
| 1991 |
Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, Schwarz SA, Plumton DL, Kuech TF. An investigation of the Pd‐In‐Ge nonspiking Ohmic contact to n‐GaAs using transmission line measurement, Kelvin, and Cox and Strack structures Journal of Applied Physics. 69: 4364-4372. DOI: 10.1063/1.348360 |
0.428 |
|
| 1991 |
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact top‐GaAs Applied Physics Letters. 58: 1617-1619. DOI: 10.1063/1.105143 |
0.391 |
|
| 1991 |
Hsu SN, Chen LJ, Lau SS. Effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted (001) Si Nuclear Inst. and Methods in Physics Research, B. 59: 1037-1040. DOI: 10.1016/0168-583X(91)95759-7 |
0.417 |
|
| 1991 |
Xia W, Hsu SN, Han CC, Pappert SA, Zhu B, Cozzolino C, Yu PKL, Lau SS, Poker DB, White CW, Schwarz SA. Ion mixing of semiconductor superlattices Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 491-498. DOI: 10.1016/0168-583X(91)95266-G |
0.394 |
|
| 1990 |
Han CC, Wang XZ, Wang LC, Marshall ED, Lau SS, Schwarz SA, Palmstrøm CJ, Harbison JP, Florez LT, Potemski RM, Tischler MA, Kuech TF. Nonspiking ohmic contact to p-GaAs by solid-phase regrowth Journal of Applied Physics. 68: 5714-5718. DOI: 10.1063/1.346990 |
0.455 |
|
| 1990 |
Cros A, Saoudi R, Hollinger G, Hewett CA, Lau SS. An x‐ray photoemission spectroscopy investigation of oxides grown on AuxSi1−x layers Journal of Applied Physics. 67: 1826-1830. DOI: 10.1063/1.345610 |
0.357 |
|
| 1990 |
Xia W, Hewett CA, Fernandes M, Lau SS, Poker DB. Moving species during ion mixing in GexSi1−x/metal systems Journal of Applied Physics. 67: 1814-1819. DOI: 10.1063/1.345608 |
0.402 |
|
| 1990 |
Palmstrøm CJ, Schwarz SA, Yablonovitch E, Harbison JP, Schwartz CL, Florez LT, Gmitter TJ, Marshall ED, Lau SS. Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formation Journal of Applied Physics. 67: 334-339. DOI: 10.1063/1.345258 |
0.442 |
|
| 1990 |
Hewett CA, Fernandes MG, Lau SS. Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme Journal of Applied Physics. 67: 524-527. DOI: 10.1063/1.345237 |
0.461 |
|
| 1990 |
Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. Stable and shallow PdIn ohmic contacts ton‐GaAs Applied Physics Letters. 56: 2129-2131. DOI: 10.1063/1.102993 |
0.447 |
|
| 1990 |
Paccagnella A, Wang LC, Canali C, Castellaneta G, Dapor M, Donzelli G, Zanoni E, Lau SS. Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: Technology and performance Thin Solid Films. 187: 9-18. DOI: 10.1016/0040-6090(90)90105-M |
0.354 |
|
| 1990 |
Fang F, Lau SS. Ohmic contacts formed by ion mixing in Si-diamond system Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 11: 475-477. |
0.37 |
|
| 1989 |
Marshall ED, Lau SS, Palmstrøm CJ, Sands T, Schwartz CL, Schwarz SA, Harbison JP, Florez LT. Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System Mrs Proceedings. 148. DOI: 10.1557/Proc-148-163 |
0.305 |
|
| 1989 |
Fang F, Hewett CA, Fernandes MG, Lau SS. Ohmic contacts formed by ion mixing in the si-diamond system Ieee Transactions On Electron Devices. 36: 1783-1786. DOI: 10.1109/16.34243 |
0.446 |
|
| 1989 |
Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme onn‐GaAs Journal of Applied Physics. 65: 1621-1625. DOI: 10.1063/1.342954 |
0.367 |
|
| 1989 |
Xia W, Hewett CA, Fernandes M, Lau SS, Poker DB. On the thermodynamical driving force during ion mixing of the Co-Si system Journal of Applied Physics. 65: 2300-2306. DOI: 10.1063/1.342844 |
0.413 |
|
| 1989 |
Xia W, Lin SC, Pappert SA, Hewett CA, Fernandes M, Vu TT, Yu PKL, Lau SS. InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing Applied Physics Letters. 55: 2020-2022. DOI: 10.1063/1.102150 |
0.394 |
|
| 1989 |
Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts ton‐AlxGa1−xAs (0≤x≤0.3) Applied Physics Letters. 54: 721-723. DOI: 10.1063/1.100872 |
0.392 |
|
| 1989 |
Xia W, Fernandes M, Hewett CA, Lau SS, Poker DB, Biersack JP. On the temperature dependence and the moving species during ion mixing Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 37: 408-413. DOI: 10.1016/0168-583X(89)90214-0 |
0.342 |
|
| 1989 |
Paccagnella A, Han CC, Lau SS, Gasparotto A, Carnera A, Canali C. Thermal stability of TaSix/n-GaAs metallizations Thin Solid Films. 176: 187-196. DOI: 10.1016/0040-6090(89)90092-8 |
0.397 |
|
| 1988 |
Palmstrøm CJ, Schwarz SA, Marshall ED, Yablonovitch E, Harbison JP, Schwartz CL, Florez L, Gmitter TJ, Wang LC, Lau SS. A High Depth Resolution Backside Secondary Ion Mass Spectrometry Technique Used for Studying Metal/Gaas Contacts Mrs Proceedings. 126. DOI: 10.1557/Proc-126-283 |
0.356 |
|
| 1988 |
Hung LS, Xia W, Poker DB, Fernandes M, Tao K, Lau SS, Mayer JW. Temperature dependence of atomic transport in ion mixing Journal of Applied Physics. 64: 2354-2358. DOI: 10.1063/1.342472 |
0.431 |
|
| 1988 |
Haynes TE, Chu WK, Han CC, Lau SS, Picraux ST. Stability of TaSix‐GaAs Schottky barriers in rapid thermal processing Applied Physics Letters. 53: 2200-2202. DOI: 10.1063/1.100506 |
0.423 |
|
| 1988 |
Hsieh YF, Chen LJ, Marshall ED, Lau SS. Partial epitaxial growth of Ni2Ge and NiGe on Ge(111) Thin Solid Films. 162: 287-294. DOI: 10.1016/0040-6090(88)90217-9 |
0.375 |
|
| 1987 |
Tao K, Hewett CA, Lau SS, Buchal C, Poker DB. Study of the moving species in ion-induced reactions Applied Physics Letters. 50: 1343-1345. DOI: 10.1063/1.97901 |
0.336 |
|
| 1987 |
Marshall ED, Zhang B, Wang LC, Jiao PF, Chen WX, Sawada T, Lau SS, Kavanagh KL, Kuech TF. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge Journal of Applied Physics. 62: 942-947. DOI: 10.1063/1.339705 |
0.407 |
|
| 1987 |
Tao K, Hewett CA, Lau SS, Buchal C, Poker DB. On the moving species in ion-induced metal-semiconductor interactions Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 19: 753-757. DOI: 10.1016/S0168-583X(87)80151-9 |
0.366 |
|
| 1986 |
Sawada T, Pai CS, Lau SS, Poker DB, Buchal C. Ion mixing of Ni-Pt films on Si Journal of Materials Research. 1: 322-326. DOI: 10.1557/Jmr.1986.0322 |
0.455 |
|
| 1986 |
Hewett CA, Cabreros EM, Pai CS, Lau SS. A simple method to prepare carbon substrates for RBS analysis Nuclear Inst. and Methods in Physics Research, B. 15: 293-295. DOI: 10.1016/0168-583X(86)90306-X |
0.395 |
|
| 1986 |
Lien CD, Nicolet MA, Lau SS. Kinetics of silicides on Si〈100〉 and evaporated silicon substrates Thin Solid Films. 143: 63-72. DOI: 10.1016/0040-6090(86)90147-1 |
0.434 |
|
| 1986 |
Pai CS, Marshall ED, Lau SS, Chu WK. Intermixing between germanium and silicon thin films in the presence of a fast interstitial diffuser Thin Solid Films. 136: 37-43. DOI: 10.1016/0040-6090(86)90106-9 |
0.399 |
|
| 1985 |
Hewett GA, Bohlin KE, Randoplh MW, Lau SS. Oxidation of AU-SI Alloy Films Mrs Proceedings. 54. DOI: 10.1557/Proc-54-601 |
0.352 |
|
| 1985 |
Sawada T, Chen WX, Marshall ED, Kavanagh KL, Kuech TF, Pai CS, Lau SS. Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers Mrs Proceedings. 54. DOI: 10.1557/Proc-54-409 |
0.418 |
|
| 1985 |
Wu CS, Scott DM, Chen WX, Lau SS. The effects of ion beam etching on Si, Ge, GaAs, and InP schottky barrier diodes Journal of the Electrochemical Society. 132: 918-922. DOI: 10.1149/1.2113985 |
0.454 |
|
| 1985 |
Pai CS, Lau SS, Suni I, Csepregi L. Comparison of electronic effects and stress effects in enhancing regrowth rate of ion-implanted amorphous Si Applied Physics Letters. 47: 1214-1216. DOI: 10.1063/1.96332 |
0.446 |
|
| 1985 |
Lau SS, Chen WX, Marshall ED, Pai CS, Tseng WF, Kuech TF. Thermal and chemical stability of Schottky metallization on GaAs Applied Physics Letters. 47: 1298-1300. DOI: 10.1063/1.96311 |
0.361 |
|
| 1985 |
Marshall ED, Chen WX, Wu CS, Lau SS, Kuech TF. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy Applied Physics Letters. 47: 298-300. DOI: 10.1063/1.96198 |
0.353 |
|
| 1985 |
Pai CS, Cabreros E, Lau SS, Seidel TE, Suni I. Rapid thermal annealing of Al‐Si contacts Applied Physics Letters. 46: 652-654. DOI: 10.1063/1.95517 |
0.408 |
|
| 1985 |
Hung LS, Mayer JW, Pai CS, Lau SS. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing Journal of Applied Physics. 58: 1527-1536. DOI: 10.1063/1.336086 |
0.31 |
|
| 1985 |
Knapp JA, Picraux ST, Wu CS, Lau SS. Kinetics and morphology of erbium silicide formation Journal of Applied Physics. 58: 3747-3757. DOI: 10.1063/1.335640 |
0.468 |
|
| 1985 |
Pai CS, Lau SS, Poker DB, Hung LS. A comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II Journal of Applied Physics. 58: 4178-4185. DOI: 10.1063/1.335550 |
0.348 |
|
| 1985 |
Pai CS, Lau SS, Poker DB, Hung LS. A comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I Journal of Applied Physics. 58: 4172-4177. DOI: 10.1063/1.335549 |
0.314 |
|
| 1985 |
Hewett CA, Lau SS, Suni I, Hung LS. Phase transformations in ion-irradiated silicides Journal of Applied Physics. 57: 1089-1096. DOI: 10.1063/1.334551 |
0.455 |
|
| 1985 |
Hewett CA, Lau SS, Suni I, Poker DB. The effect of boundary conditions in ion mixing of multilayered NiSi samples Nuclear Inst. and Methods in Physics Research, B. 7: 597-600. DOI: 10.1016/0168-583X(85)90440-9 |
0.434 |
|
| 1985 |
Pai C, Scott D, Lau S, Suni I, Eränen S. Effects of ion mixing on Al-Si contacts☆ Thin Solid Films. 126: 241-249. DOI: 10.1016/0040-6090(85)90317-7 |
0.465 |
|
| 1985 |
Hewett CA, Scott DM, Lau SS, Bartur M. OXIDATION OF Au/Si FILMS FOR SELF-CONFINED INTERCONNECTS Materials Research Society Symposia Proceedings. 40: 329-334. |
0.333 |
|
| 1984 |
Pai CS, Lau SS. Epitaxial Growth of Si x Ge 1−x Films on Si by Solid Phase Epitaxy. Mrs Proceedings. 37: 255. DOI: 10.1557/Proc-37-255 |
0.414 |
|
| 1984 |
Kuech TF, Lau SS, Wu CS. MEASUREMENT OF SILICIDE SCHOTTKY BARRIER HEIGHTS BY USE OF PHOTOVOLTAIC TECHNIQUES Materials Research Society Symposia Proceedings. 25: 663-668. DOI: 10.1557/Proc-25-663 |
0.324 |
|
| 1984 |
Knapp JA, Picraux ST, Wu CS, Lau SS. Erbium silicide formation using a line-source electron beam Applied Physics Letters. 44: 747-749. DOI: 10.1063/1.94903 |
0.391 |
|
| 1984 |
Lien CD, Finetti M, Nicolet MA, Lau SS. Electrical properties of thin Co2Si, CoSi, and CoSi2 layers grown on evaporated silicon Journal of Electronic Materials. 13: 95-105. DOI: 10.1007/Bf02659838 |
0.443 |
|
| 1984 |
Lien CD, Nicolet MA, Lau SS. Kinetics of CoSi2 from evaporated silicon Applied Physics a Solids and Surfaces. 34: 249-251. DOI: 10.1007/BF00616581 |
0.352 |
|
| 1984 |
Lien CD, Nicolet MA, Lau SS. LOW TEMPERATURE FORMATION OF NiSi//2 FROM EVAPORATED SILICON Physica Status Solidi (a) Applied Research. 81: 123-128. |
0.351 |
|
| 1983 |
Hewett CA, Suni I, Lau SS, Hung LS, Scott DM. Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides Mrs Proceedings. 27: 145. DOI: 10.1557/Proc-27-145 |
0.366 |
|
| 1983 |
Wu CS, Scott DM, Lau SS, Wakita A, Sigmon TW, Knapp JA, Picraux ST. Comparison of thermal, line-source electron beam and CW laser annealing for the fabrication of ErSi/sub 2/ Schottky barrier on Si Mrs Proceedings. 25: 93. DOI: 10.1557/Proc-25-93 |
0.42 |
|
| 1983 |
Cheng IC, Lau SS, Thompson RD, Tu KN. Shallow Contact Formation of Gadolinium Silicide Mrs Proceedings. 25. DOI: 10.1557/Proc-25-39 |
0.315 |
|
| 1983 |
Wu CS, Lau SS, Kuech TF, Liu BX. Surface morphology and electronic properties of ErSi2 Thin Solid Films. 104: 175-182. DOI: 10.1557/Proc-18-175 |
0.475 |
|
| 1983 |
Liu B, Johnson WL, Nicolet M, Lau SS. Structural difference rule for amorphous alloy formation by ion mixing Applied Physics Letters. 42: 45-47. DOI: 10.1063/1.93767 |
0.346 |
|
| 1983 |
Hung LS, Gyulai J, Mayer JW, Lau SS, Nicolet MA. Kinetics of TiSi2 formation by thin Ti films on Si Journal of Applied Physics. 54: 5076-5080. DOI: 10.1063/1.332781 |
0.456 |
|
| 1983 |
Ottaviani G, Tu K, Thompson RD, Mayer JW, Lau SS. Interaction of Pd–Er alloys with silicon Journal of Applied Physics. 54: 4614-4622. DOI: 10.1063/1.332617 |
0.379 |
|
| 1983 |
Nicolet M, Lau SS. Formation and Characterization of Transition-Metal Silicides Vlsi Electronics Microstructure Science. 6: 329-464. DOI: 10.1016/B978-0-12-234106-9.50011-8 |
0.386 |
|
| 1983 |
Liu B, Johnson WL, Nicolet MA, Lau SS. Amorphous film formation by ion mixing in binary metal systems Nuclear Instruments and Methods in Physics Research. 229-234. DOI: 10.1016/0167-5087(83)90804-9 |
0.341 |
|
| 1983 |
Pai CS, Lau SS, Suni I. Recrystallization of amorphous silicon layers on sapphire Thin Solid Films. 109: 263-281. DOI: 10.1016/0040-6090(83)90116-5 |
0.438 |
|
| 1983 |
Suni I, Nicolet MA, Pai CS, Lau SS. Stability of amorphous Fe-W alloys in multilayer metallizations on silicon Thin Solid Films. 107: 73-80. DOI: 10.1016/0040-6090(83)90009-3 |
0.439 |
|
| 1982 |
Banwell T, Finetti M, Suni I, Nicolet M, Lau SS, Scott DM. Ion Irradiation Effects on Pt Contacts To Si with and without Interfacial Chemical Oxide Mrs Proceedings. 14. DOI: 10.1557/Proc-14-411 |
0.404 |
|
| 1982 |
Suni I, Goeltz G, Nicolet MA, Lau SS. EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM Materials Research Society Symposia Proceedings. 10: 175-118. DOI: 10.1557/Proc-10-175 |
0.464 |
|
| 1982 |
Suni I, Göltz G, Grimaldi MG, Nicolet MA, Lau SS. Compensating impurity effect on epitaxial regrowth rate of amorphized Si Applied Physics Letters. 40: 269-271. DOI: 10.1063/1.93034 |
0.391 |
|
| 1982 |
Mäenpää M, Kuech TF, Nicolet MA, Lau SS, Sadana DK. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers Journal of Applied Physics. 53: 1076-1083. DOI: 10.1063/1.330519 |
0.469 |
|
| 1982 |
Mäenpää M, Hung LS, Nicolet M-, Sadana DK, Lau SS. Epitaxial reordering of ion-irradiated NiSi2 layers Thin Solid Films. 87: 277-284. DOI: 10.1016/0040-6090(82)90364-9 |
0.489 |
|
| 1982 |
Stritzker B, Appleton BR, White CW, Lau SS. Superconducting V3Si produced by pulsed laser annealing Solid State Communications. 41: 321-324. DOI: 10.1016/0038-1098(82)90384-2 |
0.311 |
|
| 1982 |
Mäenpää M, Hung LS, Tsaur BY, Mayer JW, Nicolet MA, Lau SS, Sadana DK, Tseng WF. Crystallization investigation of NiSi2 thin films Journal of Electronic Materials. 11: 289-301. DOI: 10.1007/Bf02654673 |
0.468 |
|
| 1982 |
LIU BX, NICOLET MA, LAU SS. TI-AU METALLIC GLASSES FORMED BY ION MIXING Phys Status Solidi A. 183-188. DOI: 10.1002/Pssa.2210730123 |
0.375 |
|
| 1982 |
Lau SS, Mayer JW. EPITAXIAL GROWTH OF SILICON STRUCTURES - THERMAL, LASER-, AND ELECTRON-BEAM-INDUCED Treatise On Materials Science and Technology. 24: 67-111. |
0.361 |
|
| 1981 |
Liu B, Wieluński LS, Nicolet M, Lau SS. Ion Mixing and Demixing in The Au-Si System Mrs Proceedings. 7: 65. DOI: 10.1557/Proc-7-65 |
0.437 |
|
| 1981 |
Liu B, Wieluniski LS, MÄenpÄÄ M, Nicolet M, Lau SS. Formation of Au-Si Metastable Phases by Ion Mixing Mrs Proceedings. 7: 133. DOI: 10.1557/Proc-7-133 |
0.423 |
|
| 1981 |
Tsaur BY, Lau SS, Mayer JW. Ion-beam-induced metastable phases in the Au-Co system Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 44: 95-108. DOI: 10.1080/01418638108222370 |
0.403 |
|
| 1981 |
Kuech TF, Mäenpää M, Lau SS. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique Applied Physics Letters. 39: 245-247. DOI: 10.1063/1.92695 |
0.461 |
|
| 1981 |
Tsaur BY, Lau SS, Mayer JW, Nicolet M‐. Sequence of phase formation in planar metal-Si reaction couples Applied Physics Letters. 38: 922-924. DOI: 10.1063/1.92183 |
0.301 |
|
| 1981 |
Grimaldi MG, Mäenpää M, Paine BM, Nicolet M, Lau SS, Tseng WF. Epitaxial growth of amorphous Ge films deposited on single‐crystal Ge Journal of Applied Physics. 52: 1351-1355. DOI: 10.1063/1.329763 |
0.392 |
|
| 1981 |
Mäenpää M, Hung LS, Grimaldi MG, Suni I, Mayer JW, Nicolet M-, Lau SS. GeSi heterostructures by crystallization of amorphous layers Thin Solid Films. 82: 347-356. DOI: 10.1016/0040-6090(81)90478-8 |
0.429 |
|
| 1981 |
Lau SS, Tsaur BY, Allmen Mv, Mayer JW, Stritzker B, White CW, Appleton B. Ion-beam mixing of metal-semiconductor eutectic systems Nuclear Instruments and Methods. 97-105. DOI: 10.1016/0029-554X(81)90676-5 |
0.439 |
|
| 1981 |
Tsaur BY, Lau SS, Hung LS, Mayer JW. Microalloying by ion-beam mixing Nuclear Instruments and Methods. 182: 67-77. DOI: 10.1016/0029-554X(81)90672-8 |
0.338 |
|
| 1980 |
Appleton BR, Stritzker B, White CW, Narayan J, Fletcher J, Meyer O, Lau SS. Laser Induced Defects and Materials Interactions in the V-Si System Mrs Proceedings. 1. DOI: 10.1557/Proc-1-607 |
0.377 |
|
| 1980 |
Hung LS, Lau SS, Allmen Mv, Mayer JW, Ullrich BM, Baker JE, Williams P, Tseng WF. Epitaxial growth of Si deposited on (100) Si Applied Physics Letters. 37: 909-911. DOI: 10.1063/1.91855 |
0.45 |
|
| 1980 |
Allmen Mv, Lau SS, Mäenpää M, Tsaur BY. Phase transformations in laser‐irradiated Au‐Si thin films Applied Physics Letters. 36: 205-207. DOI: 10.1063/1.91426 |
0.311 |
|
| 1980 |
Tsaur BY, Lau SS, Mayer JW. Continuous series of metastable Ag-Cu solid solutions formed by ion-beam mixing Applied Physics Letters. 36: 823-826. DOI: 10.1063/1.91331 |
0.335 |
|
| 1980 |
Lau SS, Allmen Mv, Mäenpää M, Tsaur BY. PHASE TRANSFORMATION IN LASER-IRRADIATED Au-Si THIN FILMS Laser and Electron Beam Processing of Materials. 544-548. DOI: 10.1016/B978-0-12-746850-1.50080-3 |
0.351 |
|
| 1980 |
Allmen Mv, Lau SS, Sheng TT, Wittmer M. Structure Of Laser-Produced Silicide Layers Laser and Electron Beam Processing of Materials. 524-529. DOI: 10.1016/B978-0-12-746850-1.50077-3 |
0.416 |
|
| 1980 |
Mäenpää M, Lau SS, Allmen MV, Golecki I, Nicolet M-, Minnucci J. Doping of silicon by pulsed electron beam annealing of deposited layers Thin Solid Films. 67: 293-297. DOI: 10.1016/0040-6090(80)90462-9 |
0.437 |
|
| 1980 |
Lau SS, Cheung NW. EPITAXIAL GROWTH OF THE NICKEL DISILICIDE PHASE Thin Solid Films. 71: 117-127. DOI: 10.1016/0040-6090(80)90190-X |
0.426 |
|
| 1980 |
Mayer JW, Tsaur BY, Lau SS, Hung LS. ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN FILM STRUCTURES Nuclear Instruments and Methods. 182: 1-13. DOI: 10.1016/0029-554X(81)90666-2 |
0.436 |
|
| 1979 |
Lau SS, Von Allmen M, Golecki I, Nicolet MA, Kennedy EF, Tseng WF. Solar furnace annealing of amorphous Si layers Applied Physics Letters. 35: 327-329. DOI: 10.1063/1.91109 |
0.515 |
|
| 1979 |
Tsaur BY, Lau SS, Mayer JW. Ion-beam-induced formation of the PdSi silicide Applied Physics Letters. 35: 225-227. DOI: 10.1063/1.91103 |
0.495 |
|
| 1979 |
Allmen Mv, Lau SS, Mayer JW, Tseng WF. Solid‐state epitaxial growth of deposited Si films Applied Physics Letters. 35: 280-282. DOI: 10.1063/1.91071 |
0.488 |
|
| 1979 |
Lau SS, Matteson S, Mayer JW, Revesz P, Gyulai J, Roth J, Sigmon TW, Cass T. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques Applied Physics Letters. 34: 76-78. DOI: 10.1063/1.90564 |
0.502 |
|
| 1979 |
Chapman GE, Lau SS, Matteson S, Mayer JW. Silicide formation by high-dose Si+-ion implantation of Pd Journal of Applied Physics. 50: 6321-6327. DOI: 10.1063/1.325773 |
0.488 |
|
| 1979 |
Golecki I, Chapman G, Lau S, Tsaur B, Mayer J. Ion-beam induced epitaxy of silicon Physics Letters A. 71: 267-269. DOI: 10.1016/0375-9601(79)90183-X |
0.474 |
|
| 1979 |
Golecki I, Kennedy EF, Lau SS, Mayer JW, Tseng WF, Eckardt RC, Wagner RJ. Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing Thin Solid Films. 57: L13-L15. DOI: 10.1016/0040-6090(79)90435-8 |
0.435 |
|
| 1979 |
Tsaur BY, Lau SS, Liau ZL, Mayer JW. Ion-beam-induced intermixing of surface layers☆ Thin Solid Films. 63: 31-36. DOI: 10.1016/0040-6090(79)90095-6 |
0.445 |
|
| 1979 |
Kennedy EF, Lau SS, Golecki I. Pulsed electron beam annealing of ion implanted Si layers Radiation Effects Letters. 43: 31-36. |
0.354 |
|
| 1978 |
Lau SS. REGROWTH OF AMORPHOUS FILMS J Vac Sci Technol. 15: 1656-1661. DOI: 10.1116/1.569824 |
0.348 |
|
| 1978 |
Lau SS, Tseng WF, Nicolet M, Mayer JW, Minnucci JA, Kirkpatrick AR. Heteroepitaxy of deposited amorphous layer by pulsed electron‐beam irradiation Applied Physics Letters. 33: 235-237. DOI: 10.1063/1.90310 |
0.416 |
|
| 1978 |
Lau SS, Tseng WF, Nicolet M, Mayer JW, Eckardt RC, Wagner RJ. Epitaxial growth of deposited amorphous layer by laser annealing Applied Physics Letters. 33: 130-131. DOI: 10.1063/1.90280 |
0.415 |
|
| 1978 |
Lau SS, Mayer JW, Tu KN. Interactions in the Co/Si thin-film system. I. Kinetics Journal of Applied Physics. 49: 4005-4010. DOI: 10.1063/1.325359 |
0.397 |
|
| 1978 |
Wagner RJ, Lau SS, Küllen RP, Lile DL, Wagner NK. Analysis of anodically oxidized InP by MeV 4He+ channeling effect measurements and Auger electron spectrometry Nuclear Instruments and Methods. 149: 659-662. DOI: 10.1016/0029-554X(78)90946-1 |
0.322 |
|
| 1978 |
Liau ZL, Lau SS, Nicolet MA, Mayer JW, Blattner RJ, Williams P, Evans CA. Kinetic aspects of solid-phase epitaxial growth of amorphous Si Nuclear Instruments and Methods. 149: 623-627. DOI: 10.1016/0029-554X(78)90940-0 |
0.49 |
|
| 1978 |
Tseng W, Gyulai J, Koji T, Lau S, Roth J, Mayer J. Investigation of dislocations by backscattering spectrometry and transmission electron microscopy Nuclear Instruments and Methods. 149: 615-617. DOI: 10.1016/0029-554X(78)90938-2 |
0.35 |
|
| 1977 |
Pretorius R, Ramiller CL, Lau SS, Nicolet MA. Radioactive silicon as a marker in thin-film silicide formation Applied Physics Letters. 30: 501-503. DOI: 10.1063/1.89230 |
0.318 |
|
| 1977 |
Pretorius R, Liau ZL, Lau SS, Nicolet MA. Growth mechanism for solid-phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique Journal of Applied Physics. 48: 2886-2890. DOI: 10.1063/1.324098 |
0.37 |
|
| 1977 |
Lau SS, Liau ZL, Nicolet M, Mayer JW. Heterostructure by solid‐phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system Journal of Applied Physics. 48: 917-919. DOI: 10.1063/1.323708 |
0.451 |
|
| 1977 |
Liau ZL, Lau SS, Nicolet M-, Mayer JW. Repetitive growth stages in the solid phase epitaxy of silicon Thin Solid Films. 44: 149-153. DOI: 10.1016/0040-6090(77)90449-7 |
0.462 |
|
| 1977 |
Ottaviani G, Canali C, Ferrari G, Ferrari R, Majni G, Prudenziati M, Lau S. Growth kinetics of Pd2Ge and PdGe on single-crystal and evaporated germanium Thin Solid Films. 47: 187-194. DOI: 10.1016/0040-6090(77)90359-5 |
0.39 |
|
| 1977 |
Tseng WF, Liau ZL, Lau SS, Nicolet M-, Mayer JW. The crystalline qualities of silicon layers formed by solid phase epitaxial growth Thin Solid Films. 46: 99-107. DOI: 10.1016/0040-6090(77)90345-5 |
0.453 |
|
| 1977 |
Liau ZL, Lau SS, Nicolet M-, Mayer JW. Effects of temperature on the solid phase epitaxy of silicon Thin Solid Films. 46: 93-98. DOI: 10.1016/0040-6090(77)90344-3 |
0.477 |
|
| 1977 |
Tseng W, Liau ZL, Lau SS, Nicolet M-, Mayer JW. Structural investigation of silicon epitaxial layers grown by solid state reactions Thin Solid Films. 45: 148. DOI: 10.1016/0040-6090(77)90217-6 |
0.391 |
|
| 1977 |
Wagner RJ, Lau SS, Mayer JW. The effects of the annealing environment and of interposed layers on the growth kinetics of VSi2 thin films Thin Solid Films. 45: 123-124. DOI: 10.1016/0040-6090(77)90212-7 |
0.382 |
|
| 1977 |
Lau SS, Liau ZL, Nicolet MA. Solid phase epitaxy in silicide-forming systems Thin Solid Films. 47: 313-322. DOI: 10.1016/0040-6090(77)90046-3 |
0.418 |
|
| 1976 |
Harris JM, Lau SS, Nicolet MA, Nowicki RS. Studies of the Ti-W Metallization System on Si Journal of the Electrochemical Society. 123: 120-124. DOI: 10.1149/1.2132743 |
0.337 |
|
| 1976 |
Pretorius R, Liau ZL, Lau SS, Nicolet MA. Dissociation mechanism for solid-phase epitaxy of silicon in the Si 〈100〉/Pd2Si/Si (amorphous) system Applied Physics Letters. 29: 598-600. DOI: 10.1063/1.89156 |
0.353 |
|
| 1976 |
Csepregi L, Kennedy EF, Lau SS, Mayer JW, Sigmon TW. Disorder produced by high-dose implantation in Si Applied Physics Letters. 29: 645-648. DOI: 10.1063/1.88886 |
0.413 |
|
| 1976 |
Nakamura K, Lau SS, Nicolet MA, Mayer JW. Ti and v layers retard interaction between Al films and polycrystalline Si Applied Physics Letters. 28: 277-280. DOI: 10.1063/1.88734 |
0.44 |
|
| 1976 |
Lau SS, Canali C, Liau ZL, Nakamura K, Nicolet M‐, Mayer JW, Blattner RJ, Evans CA. Antimony doping of Si layers grown by solid‐phase epitaxy Applied Physics Letters. 28: 148-150. DOI: 10.1063/1.88670 |
0.46 |
|
| 1976 |
Nakamura K, Olowolafe JO, Lau SS, Nicolet MA, Mayer JW, Shima R. Interaction of metal layers with polycrystalline Si Journal of Applied Physics. 47: 1278-1283. DOI: 10.1063/1.322826 |
0.452 |
|
| 1975 |
Liau ZL, Campisano SU, Canali C, Lau SS, Mayer JW. Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial Growth Journal of the Electrochemical Society. 122: 1696-1699. DOI: 10.1149/1.2134112 |
0.346 |
|
| 1975 |
Canali C, Campisano SU, Lau SS, Liau ZL, Mayer JW. Solid‐phase epitaxial growth of Si through palladium silicide layers Journal of Applied Physics. 46: 2831-2836. DOI: 10.1063/1.322026 |
0.461 |
|
| 1975 |
Lau SS, Feng JS-, Olowolafe JO, Nicolet M-. Iron silicide thin film formation at low temperatures Thin Solid Films. 25: 415-422. DOI: 10.1016/0040-6090(75)90059-0 |
0.434 |
|
| 1975 |
Chu WK, Lau SS, Mayer JW, Müller H, Tu K. Implanted noble gas atoms as diffusion markers in silicide formation Thin Solid Films. 25: 393-402. DOI: 10.1016/0040-6090(75)90057-7 |
0.447 |
|
| 1974 |
Lau SS, Chu WK, Mayer JW, Tu KN. Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formation☆ Thin Solid Films. 23: 205-213. DOI: 10.1016/0040-6090(74)90241-7 |
0.32 |
|
| Show low-probability matches. |