| Year |
Citation |
Score |
| 2011 |
Hamasha MM, Alzoubi K, Switzer JC, Lu S, Desu SB, Poliks M. A study on crack propagation and electrical resistance change of sputtered aluminum thin film on poly ethylene terephthalate substrate under stretching Thin Solid Films. 519: 7918-7924. DOI: 10.1016/J.Tsf.2011.06.062 |
0.32 |
|
| 2011 |
Hamasha MM, Alzoubi K, Lu S, Desu SB. Durability study on sputtered indium tin oxide thin film on Poly Ethylene Terephthalate substrate Thin Solid Films. 519: 6033-6038. DOI: 10.1016/J.Tsf.2011.04.069 |
0.386 |
|
| 2008 |
Rastogi AC, Lim SH, Desu SB. Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films Journal of Applied Physics. 104. DOI: 10.1063/1.2957056 |
0.428 |
|
| 2008 |
Sharma RK, Rastogi AC, Desu SB. Manganese oxide embedded polypyrrole nanocomposites for electrochemical supercapacitor Electrochimica Acta. 53: 7690-7695. DOI: 10.1016/J.Electacta.2008.04.028 |
0.306 |
|
| 2007 |
Sharma RK, Rastogi AC, Desu SB. Nano crystalline porous silicon as large-area electrode for electrochemical synthesis of polypyrrole Physica B: Condensed Matter. 388: 344-349. DOI: 10.1016/J.Physb.2006.06.146 |
0.353 |
|
| 2006 |
Rastogi AC, Desu SB. Structural development and electronic properties of hot filament low pressure chemical vapor deposited fluorocarbon polymer films Journal of Materials Research. 21: 242-254. DOI: 10.1557/jmr.2006.0021 |
0.471 |
|
| 2006 |
Rastogi AC, Desu SB. Characterization of low pressure chemical vapor deposited polymeric fluorinated carbon m (C:FX)n thin films with low dielectric constant Applied Physics a: Materials Science and Processing. 83: 57-66. DOI: 10.1007/s00339-005-3435-6 |
0.406 |
|
| 2006 |
Rastogi AC, Desu SB. Ferroelectric poly(vinylidene fluoride) thin films grown by low-pressure chemical vapor polymerization Chemical Vapor Deposition. 12: 742-750. DOI: 10.1002/Cvde.200606505 |
0.396 |
|
| 2005 |
Rastogi AC, Desu SB. Thermal chemical vapor deposition of fluorocarbon polymer thin films in a hot filament reactor Polymer. 46: 3440-3451. DOI: 10.1016/j.polymer.2004.10.082 |
0.385 |
|
| 2004 |
Lim SH, Rastogi AC, Desu SB. Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application Journal of Applied Physics. 96: 5673-5682. DOI: 10.1063/1.1785836 |
0.308 |
|
| 2004 |
Rastogi AC, Desu SB, Bhattacharya P, Katiyar RS. Effect of strain gradation on luminescence and electronic properties of pulsed laser deposited zinc oxide thin films Journal of Electroceramics. 13: 345-352. DOI: 10.1007/S10832-004-5124-9 |
0.445 |
|
| 2004 |
Rastogi AC, Desu SB. Current conduction and dielectric behavior of high k-Y2O 3 films integrated with Si using chemical vapor deposition as a gate dielectric for metal-oxide-semiconductor devices Journal of Electroceramics. 13: 121-127. DOI: 10.1007/s10832-004-5087-x |
0.419 |
|
| 2003 |
Desu CS, Joshi PC, Desu SB. The Enhanced Dielectric and Insulating Properties of Al2O 3 Modified Ta2O5 Thin Films Journal of Electroceramics. 10: 209-214. DOI: 10.1023/B:Jecr.0000011219.91180.4C |
0.793 |
|
| 2003 |
Jain M, Majumder SB, Katiyar RS, Desu SB. Phase transition behavior of highly (100) textured sol-gel-derived Ba 0.5Sr0.5TiO3 thin films Applied Physics a: Materials Science and Processing. 77: 789-792. DOI: 10.1007/S00339-003-2150-4 |
0.424 |
|
| 2003 |
Lee KH, Lee KB, Desu SB. Electrode-barrier properties when using the Pt1-xIrx alloy and its oxide for high-density Pb(Zr, Ti)O3-based ferroelectric memories Journal of the Korean Physical Society. 42: 538-542. |
0.411 |
|
| 2002 |
Das RR, Bhattacharya P, Perez W, Cruz AM, Katiyar RS, Desu SB. Studies on laser ablated SrBi 2Ta 2O 9 and Sr 0.8Ca 0.2Bi 2Ta 2O 9 ferroelectric thin films Integrated Ferroelectrics. 42: 305-311. DOI: 10.1080/10584580210839 |
0.469 |
|
| 2002 |
Das RR, Bhattacharya P, Pérez W, Katiyar RS, Desu SB. Ferroelectric properties of laser-ablated Sr1-xA xBi2Ta2O9 thin films (where A=Ba, Ca) Applied Physics Letters. 80: 637-639. DOI: 10.1063/1.1436528 |
0.54 |
|
| 2001 |
Lee KB, Desu SB. Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti) O3 -based high-density nonvolatile ferroelectric memories Current Applied Physics. 1: 379-384. DOI: 10.1016/S1567-1739(01)00039-6 |
0.37 |
|
| 2001 |
Vedula R, Desu CS, Tirumala S, Bhatt HD, Desu SB, Lee KB. New electrode-barrier structures for high density ferroelectric memories Applied Physics a: Materials Science and Processing. 72: 13-20. DOI: 10.1007/S003390000624 |
0.743 |
|
| 2001 |
Desu SB, Vedula R, Bhatt HD, Hwang YS, Zhang X. Novel electrode barriers for high density ferroelectric nonvolatile memories Physica Status Solidi (a) Applied Research. 184: 273-289. |
0.687 |
|
| 2000 |
Ching-Prado E, Pérez W, Dobal PS, Katiyar RS, Tirumala S, Desu SB. Raman scattering in the aurivillius-layered ferroelectric SrBi2Ta2O9 – Bi3TiNbO9 thin films Integrated Ferroelectrics. 29: 33-41. DOI: 10.1080/10584580008216672 |
0.538 |
|
| 2000 |
Tirumala S, Rastogi AC, Desu SB. Effect of oxygen plasma on growth, structure and ferroelectric properties of SrBi2Ta2O9 thin films formed by pulsed laser ablation technique Journal of Electroceramics. 5: 7-20. DOI: 10.1023/A:1009929109536 |
0.511 |
|
| 2000 |
Moret MP, Zallen R, Vijay DP, Desu SB. Brookite-rich titania films made by pulsed laser deposition Thin Solid Films. 366: 8-10. DOI: 10.1016/S0040-6090(00)00862-2 |
0.474 |
|
| 2000 |
Senkevich JJ, Desu SB, Simkovic V. Temperature studies of optical birefringence and X-ray diffraction with poly(p-xylylene), poly(chloro-p-xylylene) and poly(tetrafluoro-p-xylylene) CVD thin films Polymer. 41: 2379-2390. DOI: 10.1016/S0032-3861(99)00419-X |
0.442 |
|
| 2000 |
Senkevich JJ, Desu SB. Compositional studies of near-room-temperature thermal CVD poly(chloro-p-xylylene)/SiO2 nanocomposites Applied Physics a: Materials Science and Processing. 70: 541-546. DOI: 10.1007/s003390051076 |
0.427 |
|
| 2000 |
Tirumala S, Desu SB, Rastogi A. Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films Applied Physics a: Materials Science and Processing. 70: 253-259. DOI: 10.1007/s003390050044 |
0.502 |
|
| 2000 |
Desu SB, Vendik OG. Supression of size effects in ferroelectric films Integrated Ferroelectrics. 28: 175-192. |
0.392 |
|
| 2000 |
Ching-Prado E, Pérez W, Dobal PS, Katiyar RS, Tirumala S, Desu SB. Raman scattering in the aurivillius-layered ferroelectric SrBi 2Ta 2O 9 - Bi 3TiNbO 9 thin films Integrated Ferroelectrics. 29: 33-41. |
0.447 |
|
| 2000 |
Ching-Prado E, Perez W, Dobal PS, Katiyar RS, Tirumala S, Desu SB. Structural study of SrBi2Ta2O9 - Bi3TiNbO9 ferroelectric thin films Materials Research Society Symposium - Proceedings. 596: 173-178. |
0.426 |
|
| 2000 |
Ching-Prado E, Pérez W, Dobal PS, Katiyar RS, Tirumala S, Desu SB. A structural study of SrBi 2Ta 2O 9 - Bi 3TiNbO 9 ferroelectric thin films Materials Research Society Symposium - Proceedings. 596: 173-178. |
0.432 |
|
| 1999 |
Desu CS, Vedula R, Lee KB, Desu SB. Electrical properties of PZT thin film capacitors with novel Pt-Ir based electrode barriers for nonvolatile memories Materials Research Society Symposium - Proceedings. 541: 71-76. DOI: 10.1557/Proc-541-71 |
0.759 |
|
| 1999 |
Yoo IK, Chung IS, Kim CJ, Lee JK, Jeon BK, Desu SB. Pyroelectric effects on 1T-1C FRAM and 1Tr FRAM Materials Research Society Symposium - Proceedings. 541: 481-487. DOI: 10.1557/Proc-541-481 |
0.399 |
|
| 1999 |
Lee KB, Tirumala S, Song Y, Ryu SO, Desu SB. Simple electrode-barrier structure using Ir for integration of PZT-based high-density nonvolatile memories Materials Research Society Symposium - Proceedings. 541: 197-202. DOI: 10.1557/Proc-541-197 |
0.505 |
|
| 1999 |
Foschini CR, Joshi PC, Varela JA, Desu SB. Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications Journal of Materials Research. 14: 1860-1864. DOI: 10.1557/Jmr.1999.0250 |
0.457 |
|
| 1999 |
Lee JK, Park Y, Chung I, Oh SJ, Jung DJ, Song YJ, Koo BJ, Lee SY, Kim K, Desu SB. Improvement in the electrical properties in Pt/Pb(Zr0.52Ti0.48)O3/Pt ferroelectric capacitors using a wet cleaning method Journal of Applied Physics. 86: 6376-6381. DOI: 10.1063/1.371700 |
0.375 |
|
| 1999 |
Ryu SO, Joshi PC, Desu SB. Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories Applied Physics Letters. 75: 2126-2128. DOI: 10.1063/1.124938 |
0.592 |
|
| 1999 |
Foschini CR, Longo E, Varela JA, Desu SB. Thickness dependence of leakage current in BaBi2Ta2O9 thin films Applied Physics Letters. 75: 552-554. DOI: 10.1063/1.124419 |
0.568 |
|
| 1999 |
Lee JK, Kim T, Chung I, Desu SB. Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor Applied Physics Letters. 75: 334-336. DOI: 10.1063/1.124367 |
0.412 |
|
| 1999 |
Rastogi AC, Tirumala S, Desu SB. Plasma-assisted pulsed laser deposition of SrBi2Ta2O9 thin films of improved ferroelectric and crystalline properties Applied Physics Letters. 74: 3492-3494. DOI: 10.1063/1.124140 |
0.526 |
|
| 1999 |
Lee KB, Tirumala S, Desu SB. Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties Applied Physics Letters. 74: 1484-1486. DOI: 10.1063/1.123588 |
0.573 |
|
| 1999 |
Senkevich aJJ, Desu SB. Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO2 Nanocomposites Chemistry of Materials. 11: 1814-1821. DOI: 10.1021/Cm990042Q |
0.344 |
|
| 1999 |
Desu SB, Vijay DP, Ramanathan S, Bhatt HD, Tirumala S. Stresses in sputtered RuOx thin films Thin Solid Films. 350: 21-29. DOI: 10.1016/S0040-6090(99)00265-5 |
0.516 |
|
| 1999 |
Bhatt HD, Vedula R, Desu SB, Fralick GC. La(1-x)SrxCoO3 for thin film thermocouple applications Thin Solid Films. 350: 249-257. DOI: 10.1016/S0040-6090(98)01442-4 |
0.716 |
|
| 1999 |
Ryu SO, Tirumala S, Joshi PC, Desu SB. Fabrication and characterization of (1 - x)SrBi2Ta2O9-xBi3TaTiO9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications Thin Solid Films. 340: 53-61. DOI: 10.1016/S0040-6090(98)01331-5 |
0.491 |
|
| 1999 |
Bhatt HD, Vedula R, Desu SB, Fralick GC. Thin film TiC/TaC thermocouples Thin Solid Films. 342: 214-220. DOI: 10.1016/S0040-6090(98)00963-8 |
0.732 |
|
| 1999 |
Senkevich JJ, Desu SB. Morphology of poly(chloro-p-xylylene) CVD thin films Polymer. 40: 5751-5759. DOI: 10.1016/S0032-3861(98)00793-9 |
0.518 |
|
| 1999 |
Desu CS, Joshi PC, Desu SB. Enhanced dielectric properties of modified Ta2O5 thin films Materials Research Innovations. 2: 299-302. DOI: 10.1007/S100190050101 |
0.788 |
|
| 1999 |
Desu SB. Suppression of size effects in ferroelectric films Materials Research Society Symposium - Proceedings. 541: 457-468. |
0.439 |
|
| 1999 |
Senkevich JJ, Desu SB. Near-room-temperature thermal chemical vapor deposition of poly(chloro-p-xylylene)/SiO2 nanocomposites Chemistry of Materials. 11: 1814-1821. |
0.406 |
|
| 1999 |
Ryu SO, Joshi PC, Desu SB. Low temperature processed 0.7SrBi2Ta2O9-0.3Bi3TaTio 9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories Applied Physics Letters. 75: 2126-2128. |
0.522 |
|
| 1999 |
Foschini CR, Joshi PC, Varela JA, Desu SB. Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications Journal of Materials Research. 14: 1860-1864. |
0.54 |
|
| 1999 |
Tirumala S, Ryu SO, Lee KB, Vedula R, Desu SB. Dependence of ferroelectric properties of set based capacitors on the electrode material Materials Research Society Symposium - Proceedings. 541: 185-190. |
0.723 |
|
| 1999 |
Perez W, Ching-Prado E, Dobal PS, Reynes-Figueroa A, Katiyar RS, Tirumala S, Desu SB. Raman study of SrBi2Ta2O9-Bi3TiNbO9 thin films Materials Research Society Symposium - Proceedings. 541: 247-252. |
0.387 |
|
| 1999 |
Pérez W, Ching-Prado E, Dobal PS, Reynés-Figueroa A, Katiyar RS, Tirumala S, Desu SB. Raman study of SrBi 2Ta 2O 9 - Bi 3TiNbO 9 thin films Materials Research Society Symposium - Proceedings. 541: 247-252. |
0.397 |
|
| 1998 |
Pérez W, Ching-Prado E, Dobal PS, Reynés-Figueroa A, Katiyar RS, Tirumala S, Desu SB. Raman Study of SrBi 2 Ta 2 O 9 Bi 3 TiNbO 9 Thin Films Mrs Proceedings. 541: 247. DOI: 10.1557/Proc-541-247 |
0.491 |
|
| 1998 |
Senkevich JJ, Simkovic V, Desu SB. Optical Birefringence to Determine Morphological Changes in Low-K Thin Film CVD Polymers Mrs Proceedings. 511. DOI: 10.1557/Proc-511-139 |
0.395 |
|
| 1998 |
Onishi S, Nagata M, Mitarai S, Ito Y, Kudo J, Sakiyama K, Desu SB, Bhatt HD, Vijay DP, Hwang Y. High temperature barrier electrode technology for high density ferroelectric memories with stacked capacitor structure Journal of the Electrochemical Society. 145: 2563-2568. DOI: 10.1149/1.1838680 |
0.425 |
|
| 1998 |
Joshi PC, Ramanathan S, Desu SB, Stowell S, Sengupta S. Characterization of Ba0.6Sr0.4TiO3 thin films with Mg additive fabricated by Metalorganic decomposition technique Integrated Ferroelectrics. 19: 141-148. DOI: 10.1080/10584589808012700 |
0.544 |
|
| 1998 |
Zhu J, Zhang X, Zhu Y, Desu SB. Size effects of 0.8SrBi2Ta2O9–0.2Bi3TiNbO9 thin films Journal of Applied Physics. 83: 1610-1612. DOI: 10.1063/1.366872 |
0.518 |
|
| 1998 |
Zhu Y, Zhu J, Song YJ, Desu SB. Laser-assisted low temperature processing of Pb(Zr,Ti)O3 thin film Applied Physics Letters. 73: 1958-1960. DOI: 10.1063/1.122334 |
0.52 |
|
| 1998 |
Joshi PC, Desu SB. Properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by metalorganic solution deposition technique for microwave applications Applied Physics Letters. 73: 1080-1082. DOI: 10.1063/1.122090 |
0.534 |
|
| 1998 |
Song YJ, Zhu Y, Desu SB. Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1-xTix)O3 thin films Applied Physics Letters. 72: 2686-2688. DOI: 10.1063/1.121099 |
0.604 |
|
| 1998 |
Senkevich JJ, Desu SB. Poly(tetraflouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer Applied Physics Letters. 72: 258-260. DOI: 10.1063/1.120703 |
0.428 |
|
| 1998 |
Senkevich JJ, Desu SB. Poly(chloro-p-xylylene)/SiO2 multilayer thin films deposited near-room temperature by thermal CVD Thin Solid Films. 322: 148-157. DOI: 10.1016/S0040-6090(97)00918-8 |
0.578 |
|
| 1998 |
Senkevich JJ, Desu SB. Near–Room Temperature Thermal CVD of SiO2 Films Chemical Vapor Deposition. 4: 92-94. DOI: 10.1002/(Sici)1521-3862(199805)04:03<92::Aid-Cvde92>3.0.Co;2-C |
0.515 |
|
| 1998 |
Senkevich JJ, Desu SB. Near-Room Temperature Thermal CVD of SiO2 Films Chemical Vapor Deposition. 4: 92-94. |
0.419 |
|
| 1998 |
Senkevich JJ, Desu SB. Poly(chloro-p-xylylene)/SiO2 multilayer thin films deposited near-room temperature by thermal CVD Thin Solid Films. 322: 148-157. |
0.496 |
|
| 1998 |
Desu SB, Cho HS, Nagata M. Ferroelectric SrBi2Ta2O9 thin films deposited on Si(100) by pulsed laser deposition Physica Status Solidi (a) Applied Research. 165: 213-217. |
0.443 |
|
| 1998 |
Pan W, Thio CL, Desu SB. Reactive ion etching damage to the electrical properties of ferroelectric thin films Journal of Materials Research. 13: 362-367. |
0.31 |
|
| 1998 |
Joshi PC, Ryu SO, Tirumala S, Desu SB. (1-x)SrBi2Ta2O9 - xBi3Ti(TayNb1-y)O9 layered structure solid solutions for ferroelectric random access memory devices Materials Research Society Symposium - Proceedings. 493: 215-224. |
0.512 |
|
| 1998 |
Joshi PC, Ryu SO, Zhang X, Desu SB. Structural and electrical properties of SrBi2Ta2O9 thin films fabricated by a modified metalorganic solution deposition technique Journal of the Korean Physical Society. 32. |
0.511 |
|
| 1998 |
Zhu Y, Zhu J, Song YJ, Desu SB. Laser-assisted low temperature processing of PZT thin films Materials Research Society Symposium - Proceedings. 493: 305-309. |
0.442 |
|
| 1998 |
Zhu J, Zhang X, Zhu Y, Desu SB. Size effects of 0.8SrBi2Ta2O9-0.2Bi3TiNbO 9 thin films Journal of Applied Physics. 83: 1610-1612. |
0.425 |
|
| 1998 |
Joshi PC, Ramanathan S, Desu SB, Stowell S, Sengupta S. Characterization of Ba0.6Sr0.4TiO3 thin films with Mg additive fabricated by metalorganic decomposition technique Integrated Ferroelectrics. 19: 141-148. |
0.458 |
|
| 1998 |
Joshi PC, Zhang X, Ryu SO, Tirumala S, Desu SB. Novel layered-structure solid solutions for ferroelectric random access memory devices Journal of the Korean Physical Society. 32. |
0.452 |
|
| 1998 |
Stowell S, Sengupta S, Sengupta LG, Synowcyznski J, Chiu LH, Joshi PC, Desu SB. Effects of dopants on the electronic properties of Ba1-xSrxTiO3 thin films fabricated by MOSD technique Journal of the Korean Physical Society. 32. |
0.491 |
|
| 1997 |
Chen T, Thio C, Desu SB. Impedance Spectroscopy Of Srbi2Ta2O9 And Srbi2Nb2O9 Ceramics Correlation With Fatigue Behavior Journal of Materials Research. 12: 2628-2637. DOI: 10.1557/Jmr.1997.0350 |
0.312 |
|
| 1997 |
Chen TC, Li T, Zhang X, Desu SB. Structure development studies of SrBi2(Ta1-xNbx)2O9 thin films Journal of Materials Research. 12: 2165-2174. DOI: 10.1557/Jmr.1997.0290 |
0.536 |
|
| 1997 |
Chen T, Li T, Zhang X, Desu SB. The effect of excess bismuth on the ferroelectric properties of SrBi 2 Ta 2 O 9 thin films Journal of Materials Research. 12: 1569-1575. DOI: 10.1557/Jmr.1997.0215 |
0.47 |
|
| 1997 |
Zhu Y, Desu SB, Li T, Ramanathan S, Nagata M. SrBi2Ta2O9 thin films made by liquid source metal-organic chemical vapor deposition Journal of Materials Research. 12: 783-792. DOI: 10.1557/Jmr.1997.0114 |
0.576 |
|
| 1997 |
Li T, Stall RA, Zhu Y, Desu SB, Peng CH. Ferroelectric SrBi2Ta2O9 thin films made by one and two step metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 3008: 365-372. DOI: 10.1117/12.271436 |
0.486 |
|
| 1997 |
Joshi PC, Stowell S, Desu SB. Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique Applied Physics Letters. 71: 1341-1343. DOI: 10.1063/1.119888 |
0.591 |
|
| 1997 |
Bhatt HD, Desu SB, Vijay DP, Hwang YS, Zhang X, Nagata M, Grill A. Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories Applied Physics Letters. 71: 719-721. DOI: 10.1063/1.119840 |
0.518 |
|
| 1997 |
Desu SB, Cho HS, Joshi PC. Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition Applied Physics Letters. 70: 1393-1395. DOI: 10.1063/1.118587 |
0.552 |
|
| 1997 |
Joshi PC, Ryu SO, Zhang X, Desu SB. Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique Applied Physics Letters. 70: 1080-1082. DOI: 10.1063/1.118485 |
0.589 |
|
| 1997 |
Joshi PC, Desu SB. Structural, electrical, and optical studies on rapid thermally processed ferroelectric BaTiO3 thin films prepared by metallo-organic solution deposition technique Thin Solid Films. 300: 289-294. DOI: 10.1016/S0040-6090(96)09468-0 |
0.581 |
|
| 1997 |
Joshi PC, Ramanathan S, Desu SB, Stowell S. Microstructural and electrical characteristics of rapid thermally processed (Ba1-xSrx)TiO3 thin films prepared by metalorganic solution deposition technique Physica Status Solidi (a). 161: 361-370. DOI: 10.1002/1521-396X(199706)161:2<361::Aid-Pssa361>3.0.Co;2-0 |
0.593 |
|
| 1997 |
Cho HS, Desu SB. Structural and electrical properties of oriented ferroelectric CaBi2Nb2O9 thin films deposited on n+-Si(100) by pulsed laser deposition Physica Status Solidi (a) Applied Research. 161: 371-378. |
0.449 |
|
| 1997 |
Joshi PC, Desu SB. Structural, electrical, and optical studies on rapid thermally processed ferroelectric BaTiO3 thin films prepared by metallo-organic solution deposition technique Thin Solid Films. 300: 289-294. |
0.505 |
|
| 1997 |
Joshi PC, Stowell S, Desu SB. Structural and electrical properties of crystalline (1-x)Ta2O5-xAl2O3 thin films fabricated by metalorganic solution deposition technique Applied Physics Letters. 71: 1341-1343. |
0.513 |
|
| 1997 |
Joshi PC, Ramanathan S, Desu SB, Stowell S. Microstructural and electrical characteristics of rapid thermally processed (Ba1-xSrx)TiO3 thin films prepared by metalorganic solution deposition technique Physica Status Solidi (a) Applied Research. 161: 361-370. |
0.512 |
|
| 1997 |
Desu SB, Cho HS, Joshi PC. Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition Applied Physics Letters. 70: 1393-1395. |
0.465 |
|
| 1997 |
Desu SB, Joshi PC, Zhang X, Ryu SO. Thin films of layered-structure (1 - X)SrBi2Ta2O9-XBi3Ti(Ta1-yNb y)O9 solid solution for ferroelectric random access memory devices Applied Physics Letters. 71: 1041-1043. |
0.48 |
|
| 1997 |
Chen TC, Li T, Zhang X, Desu SB. The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films Journal of Materials Research. 12: 1569-1575. |
0.488 |
|
| 1997 |
Joshi PC, Ryu SO, Zhang X, Desu SB. Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique Applied Physics Letters. 70: 1080-1082. |
0.522 |
|
| 1996 |
Li T, Zawadzkp P, Stall RA, Zhu Y, Desu SB. Novel Mocvd Processes for Nanoscale Oxide Thin Films Mrs Proceedings. 446: 315. DOI: 10.1557/Proc-446-315 |
0.499 |
|
| 1996 |
Li T, Zawadzki P, Stall RA, Peng C, Zhu Y, Desu SB. Surface Structure and Morphology of SrBi 2 Ta 2 O 9 (SBT) Thin Films Mrs Proceedings. 440: 407. DOI: 10.1557/Proc-440-407 |
0.454 |
|
| 1996 |
Yoo IK, Kim CJ, Desu SB. Retentivity Studies on Lead Zirconate Titanate Thin Film Capacitors Mrs Proceedings. 433: 273. DOI: 10.1557/Proc-433-273 |
0.544 |
|
| 1996 |
Kim D, Kim T, Lee JK, Tao W, Desu SB. Microstructure Control in Mocvd PZT Thin Films Mrs Proceedings. 433: 213. DOI: 10.1557/Proc-433-213 |
0.573 |
|
| 1996 |
Gaynor JF, Senkevich JJ, Desu SB. A new method for fabricating high performance polymeric thin films by chemical vapor polymerization Journal of Materials Research. 11: 1842-1850. DOI: 10.1557/Jmr.1996.0233 |
0.539 |
|
| 1996 |
Gaynor JF, Desu SB. Optical properties of polymeric thin films grown by chemical vapor deposition Journal of Materials Research. 11: 236-242. DOI: 10.1557/Jmr.1996.0029 |
0.489 |
|
| 1996 |
Sengupta S, Sengupta LC, Vijay DP, Desu SB. Thin films of novel ferroelectric composites Integrated Ferroelectrics. 13: 239-245. DOI: 10.1080/10584589608012319 |
0.5 |
|
| 1996 |
Joshi PC, Desu SB. Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique Journal of Applied Physics. 80: 2349-2357. DOI: 10.1063/1.363069 |
0.57 |
|
| 1996 |
Desu SB, Pan W. Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films Applied Physics Letters. 68: 566-568. DOI: 10.1063/1.116402 |
0.414 |
|
| 1996 |
Li CC, Desu SB. Processing of PbTiO3 thin films. I. In situ investigation of formation kinetics Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 1-6. |
0.435 |
|
| 1996 |
Li CC, Desu SB. Processing of PbTiO3 thin films. III. Effects of ion bombardment Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 13-21. |
0.312 |
|
| 1996 |
Joshi PC, Desu SB. Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition technique Journal of Applied Physics. 80: 2349-2357. |
0.48 |
|
| 1996 |
Stowell S, Desu SB, Sengupta S. Reactive ion etching of barium strontium titanate/oxide composites Ieee International Symposium On Applications of Ferroelectrics. 2: 859-862. |
0.418 |
|
| 1996 |
Menk GE, Desu SB, Pan W, Vijay DP. Dry etching issues in the integration of ferroelectric thin film capacitors Materials Research Society Symposium - Proceedings. 433: 189-200. |
0.453 |
|
| 1996 |
Nagata M, Vijay DP, Zhang X, Desu SB. Formation and properties of SrBi2Ta2O9 thin films Physica Status Solidi (a) Applied Research. 157: 75-82. |
0.49 |
|
| 1996 |
Desu SB, Dudkevich VP, Dudkevich PV, Zakharchenko IN, Kushlyan GL. Thermodynamics of epitaxial ferroelectric films Materials Research Society Symposium - Proceedings. 401: 195-201. |
0.444 |
|
| 1996 |
Desu SB, Chen ZJ, Dudkevich VP, Dudkevich PV, Zakharchenko IN, Kushlyan GL. Phase diagram of epitaxial BaTiO3 films under bi-axial stress Materials Research Society Symposium - Proceedings. 433: 345-350. |
0.396 |
|
| 1995 |
Sudarshanam VS, Desu SB. Fiber-optic polarization and phase modulator utilizing transparent piezofilm with indium tin oxide electrodes. Applied Optics. 34: 1177-89. PMID 21037647 DOI: 10.1364/Ao.34.001177 |
0.406 |
|
| 1995 |
Li T, Zhu Y, Desu SB, Nagata M. The Microstructure and Properties of Layered Oxide Thin Films Fabricated by MOCVD Mrs Proceedings. 415. DOI: 10.1557/Proc-415-189 |
0.513 |
|
| 1995 |
Sengupta S, Vijay DP, Desu SB. Investigation of the characteristics of ferroelectric thin films deposited by pulsed laser ablation Materials Research Society Symposium - Proceedings. 361: 545-550. DOI: 10.1557/Proc-361-545 |
0.53 |
|
| 1995 |
Sengupta S, Sengupta LC, Stowell S, Vijay DP, Desu SB. Electrical characteristics of barium strontium titanate-oxide composite films Materials Research Society Symposium - Proceedings. 360: 413-417. DOI: 10.1557/Proc-360-413 |
0.475 |
|
| 1995 |
Nagpal VJ, Davis RM, Desu SB. Novel thin films of titanium dioxide particles synthesized by a sol-gel process Journal of Materials Research. 10: 3068-3078. DOI: 10.1557/Jmr.1995.3068 |
0.513 |
|
| 1995 |
Khan AR, Desu SB. The effect of stoichiometry on the microstructure and properties of lead lanthanum titanate thin films Journal of Materials Research. 10: 2777-2787. DOI: 10.1557/Jmr.1995.2777 |
0.569 |
|
| 1995 |
Chiu CC, Desu SB, Chen G, Tsai CY, Reynolds WT. Deposition of epitaxial β-SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor Journal of Materials Research. 10: 1099-1107. DOI: 10.1557/Jmr.1995.1099 |
0.516 |
|
| 1995 |
Yoo IK, Kim CJ, Desu SB. Breakdown mechanisms in PZT thin film capacitors Integrated Ferroelectrics. 11: 269-275. DOI: 10.1080/10584589508013598 |
0.429 |
|
| 1995 |
Chung I, Desu SB, Lee JK, Yoo IK. Modification of PZT Nucleation and Growth Using Oxide Layer in Multi-Layered Electrodes Integrated Ferroelectrics. 10: 99-111. DOI: 10.1080/10584589508012268 |
0.492 |
|
| 1995 |
Lee JJ, Desu SB. The shifting of p-e hysteresis loop by the asymmetric contacts on ferroelectric pzt thin films Ferroelectrics Letters Section. 20: 27-34. DOI: 10.1080/07315179508204723 |
0.438 |
|
| 1995 |
Lee JJ, Thio CL, Desu SB. Electrode contacts on ferroelectric Pb(ZrxTi1-x) O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties Journal of Applied Physics. 78: 5073-5078. DOI: 10.1063/1.359737 |
0.55 |
|
| 1995 |
Desu SB, Vijay DP, Zhang X, He B. Oriented growth of SrBi2Ta2O9 ferroelectric thin films Applied Physics Letters. 1719. DOI: 10.1063/1.118008 |
0.539 |
|
| 1995 |
Li T, Zhu Y, Desu SB, Peng CH, Nagata M. Metalorganic chemical vapor deposition of ferroelectric SrBi 2Ta2O9 thin films Applied Physics Letters. 616. DOI: 10.1063/1.116486 |
0.597 |
|
| 1995 |
Gaynor JF, Desu SB, Senkevich JJ. A model for chemical vapor copolymerization of p-xylylenes with vinylic comonomers: Order of initiation and reactivity ratios Macromolecules. 28: 7343-7348. DOI: 10.1021/Ma00126A010 |
0.334 |
|
| 1995 |
Desu SB, Vijay DP. Novel fatigue-free layered structure ferroelectric thin films Materials Science and Engineering B. 32: 75-81. DOI: 10.1016/0921-5107(95)80017-4 |
0.599 |
|
| 1995 |
Desu SB, Li T. Fatigue-free SrBi2(TaxNb1-x)2O9 ferroelectric thin films Materials Science and Engineering B. 34. DOI: 10.1016/0921-5107(95)01232-X |
0.594 |
|
| 1995 |
Desu SB, Vijay DP. c-Axis oriented ferroelectric SrBi2(TaxNb2-x)O9 thin films Materials Science and Engineering B. 32: 83-88. DOI: 10.1016/0921-5107(94)01169-9 |
0.561 |
|
| 1995 |
Tao W, Desu SB, Li TK. Direct liquid injection MOCVD of high quality PLZT films Materials Letters. 23: 177-180. DOI: 10.1016/0167-577X(95)00032-1 |
0.492 |
|
| 1995 |
Desu SB. Minimization of fatigue in ferroelectric films Physica Status Solidi (a) Applied Research. 151: 467-480. |
0.301 |
|
| 1995 |
Lee JJ, Thio CL, Bhattacharya M, Desu SB. Electrode contacts on PZT thin films and their influence on fatigue properties Materials Research Society Symposium - Proceedings. 361: 241-247. |
0.456 |
|
| 1995 |
Lee JJ, Thio CL, Desu SB. Retention and imprint properties of ferroelectric thin films Physica Status Solidi (a) Applied Research. 151: 171-182. |
0.475 |
|
| 1995 |
Pan W, Thio CL, Desu SB, Chung C. Reactive ion etching damage to ferroelectric thin films capacitors Materials Research Society Symposium - Proceedings. 361: 93-98. |
0.315 |
|
| 1995 |
Tao W, Desu SB, Peng CH, Dickerson B, Li TK, Thio CL, Lee JJ, Hendricks W. Liquid delivery CVD of ferroelectric (Pb,La)(Zr,Ti)O3 thin films Materials Research Society Symposium - Proceedings. 361: 319-324. |
0.485 |
|
| 1994 |
Yoo IK, Desu SB. Can We Exploit Imprint in Ferroelectric Thin Film Capacitors for Memory Applications Mrs Proceedings. 361. DOI: 10.1557/Proc-361-79 |
0.472 |
|
| 1994 |
Lee WI, Lee JK, Chung E, Chung CW, Yoo IK, Desu SB. The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing Mrs Proceedings. 361: 421. DOI: 10.1557/Proc-361-421 |
0.526 |
|
| 1994 |
Vijay DP, Desu SB, Nagata M, Zhang X, Chen TC. Layered Structure Oxides for Fatigue Free Ferroelectric Applications Mrs Proceedings. 361. DOI: 10.1557/Proc-361-3 |
0.559 |
|
| 1994 |
Dickerson BD, Nagata M, Song YJ, Nam HD, Desu SB. Spectroscopic Ellipsometry Characterization of La 2 Ti 2 O 7 Thin Films Mrs Proceedings. 361: 197. DOI: 10.1557/Proc-361-197 |
0.478 |
|
| 1994 |
Gaynor JF, Desu SB. Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition Mrs Proceedings. 343. DOI: 10.1557/Proc-343-541 |
0.552 |
|
| 1994 |
Gaynor JF, Desu SB. Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition Journal of Materials Research. 9: 3125-3130. DOI: 10.1557/Jmr.1994.3125 |
0.55 |
|
| 1994 |
Pan W, Desu SB, Yoo IK, Vijay DP. Reactive ion etching of PbZr 1− x Ti x O 3 and RuO 2 films by environmentally safe gases Journal of Materials Research. 9: 2976-2980. DOI: 10.1557/Jmr.1994.2976 |
0.405 |
|
| 1994 |
Chiu CC, Tsai CY, Desu SB, Chen ZJ. Local equilibrium phase diagrams: SiC deposition in a hot wall LPCVD reactor Journal of Materials Research. 9: 2066-2071. DOI: 10.1557/Jmr.1994.2066 |
0.306 |
|
| 1994 |
Kwok CK, Desu SB. Formation kinetics of PbZrxTi1_xO3 thin films Journal of Materials Research. 9: 1728-1733. DOI: 10.1557/Jmr.1994.1728 |
0.485 |
|
| 1994 |
Si J, Desu SB, Tsai CY. Metal-organic chemical vapor deposition of ZlO2 films using Zr(thd)4 as precursors Journal of Materials Research. 9: 1721-1727. DOI: 10.1557/Jmr.1994.1721 |
0.555 |
|
| 1994 |
Chang JF, Desu SB. Effects of dopants in PZT films Journal of Materials Research. 9: 955-969. DOI: 10.1557/JMR.1994.0955 |
0.506 |
|
| 1994 |
Tsai CY, Desu SB, Chiu CC. Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor Journal of Materials Research. 9: 104-111. DOI: 10.1557/Jmr.1994.0104 |
0.361 |
|
| 1994 |
Peng CH, Desu SB. Structure Development Study of Pb (Zr, Ti)O3 Thin Films by an Optical Method Journal of the American Ceramic Society. 77: 1486-1492. DOI: 10.1111/J.1151-2916.1994.Tb09746.X |
0.492 |
|
| 1994 |
Peng CH, Desu SB. Modified Envelope Method for Obtaining Optical Properties of Weakly Absorbing Thin Films and Its Application to Thin Films of Pb(Zr,Ti)O3 Solid Solutions Journal of the American Ceramic Society. 77: 929-938. DOI: 10.1111/J.1151-2916.1994.Tb07249.X |
0.519 |
|
| 1994 |
Peng CH, Desu SB. Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O3 Thin Films Journal of the American Ceramic Society. 77: 1799-1812. DOI: 10.1111/J.1151-2916.1994.Tb07054.X |
0.584 |
|
| 1994 |
Yoo IK, Desu SB. Modelling of the hysteresis of ferroelectric thin films Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 69: 461-469. DOI: 10.1080/01418639408240121 |
0.453 |
|
| 1994 |
Bursill LA, Reaney IM, Vijay DP, Desu SB. Comparison of lead zirconate titanate thin films on ruthenium oxide and platinum electrodes Journal of Applied Physics. 75: 1521-1525. DOI: 10.1063/1.356388 |
0.56 |
|
| 1994 |
Sudarshanam VS, Desu SB. Measurement of dynamic polarization modulation depth utilizing the J 1-J4 method of spectrum analysis Review of Scientific Instruments. 65: 2337-2343. DOI: 10.1063/1.1144685 |
0.316 |
|
| 1994 |
Hendricks WC, Desu SB, Peng CH. Metalorganic chemical vapor deposition of lead titanate Chemistry of Materials. 6: 1955-1960. DOI: 10.1021/Cm00047A011 |
0.567 |
|
| 1994 |
Chiu CC, Desu SB, Amanuma K. Molten salt synthesis and dielectric properties of Pb(Fe 1 2Nb 1 2)O3-Pb(Fe 1 2Ta 1 2)O3 (PFN-PFT) solid solutions Materials Science and Engineering B. 22: 133-140. DOI: 10.1016/0921-5107(94)90235-6 |
0.306 |
|
| 1994 |
Desu SB. Stress induced modifications in ferroelectric films Physica Status Solidi (a). 141: 119-133. DOI: 10.1002/Pssa.2211410112 |
0.511 |
|
| 1993 |
Hendricks WC, Desu SB, Peng CH. Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuO x Substrates Mrs Proceedings. 335. DOI: 10.1557/Proc-335-93 |
0.53 |
|
| 1993 |
Desu SB, Vijay DP, Yoo IK. Donor–Doped Lead Zirconate Titanate (PbZr 1−x Ti x O 3 ) Films Mrs Proceedings. 335. DOI: 10.1557/Proc-335-53 |
0.572 |
|
| 1993 |
Chiui CC, Desu SB, Chen ZJ, Tsai CY. Local Equilibrium Phase Diagrams for SiC Deposition in a Hot Wall LPCVD Reactor Mrs Proceedings. 335. DOI: 10.1557/Proc-335-233 |
0.301 |
|
| 1993 |
Chiu CC, Desu SB, Chen G. Growth of Epitaxial β -SiC Films on Porous Si(100) Substrates from MTS in a Hot Wall LPCVD Reactor Mrs Proceedings. 335. DOI: 10.1557/Proc-335-183 |
0.446 |
|
| 1993 |
Sundarshanam VS, Desu SB, Claus RO. Fiber optic phase and polarization modulator utilizing a transparent piezofilm with indium tin oxide coating Materials Research Society Symposium - Proceedings. 310: 65-70. DOI: 10.1557/Proc-310-65 |
0.326 |
|
| 1993 |
Li CC, Desu SB. Study of Pbtio 2 Formation Kinetics by an In-Situ Stress Measurement Technique Mrs Proceedings. 310: 435. DOI: 10.1557/Proc-310-435 |
0.487 |
|
| 1993 |
Kwok CK, Desu SB. Novel method for determining the Curie temperature of ferroelectric films Review of Scientific Instruments. 64: 2604-2606. DOI: 10.1557/Proc-310-429 |
0.503 |
|
| 1993 |
Hendricks WC, Desu SB, Si J, Peng CH. Metallorganic Cheamcal Vapor Deposition (Mocvd) of Titanium-Based Ferroelectric Thin Films Mrs Proceedings. 310: 241. DOI: 10.1557/Proc-310-241 |
0.543 |
|
| 1993 |
Yoo IK, Desu SB, Xing J. Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors Mrs Proceedings. 310: 165. DOI: 10.1557/Proc-310-165 |
0.516 |
|
| 1993 |
Vijay DP, Desu SB, Pan W. Reactive ion Etching of PbZr x Ti 1−x O 3 and Ruo 2 Tein Films Mrs Proceedings. 310: 133. DOI: 10.1557/Proc-310-133 |
0.46 |
|
| 1993 |
Si J, Desu SB. RuO2 films by metal-organic chemical vapor deposition Journal of Materials Research. 8: 2644-2648. DOI: 10.1557/Jmr.1993.2644 |
0.571 |
|
| 1993 |
Chiu CC, Desu SB, Tsai CY. Low pressure chemical vapor deposition (LPCVD) of β-SiC on Si(100) using MTS in a hot wall reactor Journal of Materials Research. 8: 2617-2626. DOI: 10.1557/Jmr.1993.2617 |
0.423 |
|
| 1993 |
Chiu CC, Desu SB. Conversion of single crystal Si(100) to SiC film by C2H2 Journal of Materials Research. 8: 535-544. DOI: 10.1557/Jmr.1993.0535 |
0.427 |
|
| 1993 |
Kwok CK, Desu SB. Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process Journal of Materials Research. 8: 339-344. DOI: 10.1557/Jmr.1993.0339 |
0.51 |
|
| 1993 |
Vaseashta AK, Desu SB. Diamond — A Novel Sensing Material Journal of Intelligent Material Systems and Structures. 4: 129-135. DOI: 10.1177/1045389X9300400116 |
0.309 |
|
| 1993 |
Desu SB. Influence of Stresses on the Properties of Ferrodectric BoTiO3 Thin Films Journal of the Electrochemical Society. 140: 2981-2987. DOI: 10.1149/1.2220943 |
0.515 |
|
| 1993 |
Desu SB, Yoo K. Time-Dependent Dielectric Breakdown in BaTIO3 Thin Films Journal of the Electrochemical Society. 140: L133-L135. DOI: 10.1149/1.2220893 |
0.476 |
|
| 1993 |
Vijay DP, Desu SB. Electrodes for PbZrxTi]-xO3 Ferroelectric Thin Films Journal of the Electrochemical Society. 140: 2640-2645. DOI: 10.1149/1.2220877 |
0.555 |
|
| 1993 |
Vijay DP, Desu SB, Pan W. Reactive Ion Etching of Lead Zirconate Titanate (PZT) Thin Film Capacitors Journal of the Electrochemical Society. 140: 2635-2639. DOI: 10.1149/1.2220876 |
0.518 |
|
| 1993 |
Kwok CK, Vijay DP, Desu SB, Parikh NR, Hill EA. Conducting oxide electrodes for ferroelectric films Integrated Ferroelectrics. 3: 121-130. DOI: 10.1080/10584589308216706 |
0.601 |
|
| 1993 |
Desu SB, Yoo I. Electrochemical models of failure in oxide perovskites Integrated Ferroelectrics. 3: 365-376. DOI: 10.1080/10584589308216692 |
0.426 |
|
| 1993 |
Kwok CK, Desu SB, Vijay DP. Modified sol-gel process for preparation of lead zirconate titanate thin films Ferroelectrics Letters Section. 16: 143-156. DOI: 10.1080/07315179308203359 |
0.52 |
|
| 1993 |
Si J, Desu SB. Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition Journal of Applied Physics. 73: 7910-7913. DOI: 10.1063/1.353943 |
0.576 |
|
| 1993 |
Chiu CC, Desu SB. Microstructure and properties of lead ferroniobate ceramics (Pb(Fe0.5Nb0.5)O3) Materials Science and Engineering B. 21: 26-35. DOI: 10.1016/0921-5107(93)90261-K |
0.383 |
|
| 1993 |
Desu SB. Optical filters by the pyrolysis of metal-organics Journal De Physique. Iv : Jp. 3: 391-394. |
0.379 |
|
| 1993 |
Nyman MD, Desu SB, Peng CH. T8-hydridospherosiloxanes: Novel precursors for SiO2 thin films. 1. Precursor characterization and preliminary CVD Chemistry of Materials. 5: 1636-1640. |
0.375 |
|
| 1992 |
Kwok CK, Desu SB. Low Temperature Formation of Ferroelectric thin Films Mrs Proceedings. 271: 371. DOI: 10.1557/Proc-271-371 |
0.469 |
|
| 1992 |
Desu SB, Peng CH, Shi T, Agaskar PA. Low Temperature Cvd of Sio2 Films Using Novel Precursors Journal of the Electrochemical Society. 139: 2682-2685. DOI: 10.1149/1.2221284 |
0.553 |
|
| 1992 |
Peng CH, Desu SB. Low-temperature metalorganic chemical vapor deposition of perovskite Pb(ZrxTi1-x)O3 thin films Applied Physics Letters. 61: 16-18. DOI: 10.1063/1.107646 |
0.59 |
|
| 1992 |
Kwok CK, Desu SB. Pyrochlore to perovskite phase transformation in sol-gel derived lead-zirconate-titanate thin films Applied Physics Letters. 60: 1430-1432. DOI: 10.1063/1.107312 |
0.521 |
|
| 1992 |
Yoo IK, Desu SB. Fatigue modeling of lead zirconate titanate thin films Materials Science and Engineering B. 13: 319-322. DOI: 10.1016/0921-5107(92)90135-V |
0.443 |
|
| 1992 |
Desu SB. Ultra-thin TiO2 films by a novel method Materials Science and Engineering B. 13: 299-303. DOI: 10.1016/0921-5107(92)90132-S |
0.556 |
|
| 1992 |
Desu SB. Metallorganic chemical vapor deposition: a new era in optical coating technology Materials Chemistry and Physics. 31: 341-345. DOI: 10.1016/0254-0584(92)90196-F |
0.41 |
|
| 1992 |
Yoo IK, Desu SB. Mechanism of Fatigue in Ferroelectric Thin Films Physica Status Solidi (a). 133: 565-573. DOI: 10.1002/Pssa.2211330242 |
0.331 |
|
| 1991 |
Tsai C, Desu SB. Step Coverage Modeling of Thin Films Deposited by CVD Using Finite Element Method Mrs Proceedings. 250: 65. DOI: 10.1557/Proc-250-65 |
0.439 |
|
| 1991 |
Si J, Peng CH, Desu SB. Deposition and Characterization of Metalorganic Chemical Vapor Deposition ZrO 2 Thin Films Using Zr(Thd) 4 Mrs Proceedings. 250: 323. DOI: 10.1557/Proc-250-323 |
0.516 |
|
| 1991 |
Tsai C, Desu SB. Contribution of Gas-Phase Reactions to the Deposition of SiC by A Forced-Flow Chemical Vapor Infiltration Process Mrs Proceedings. 250. DOI: 10.1557/Proc-250-227 |
0.33 |
|
| 1991 |
Chiu CC, Kwok CK, Desu SB. SiC Thin Films by Chemical Conversion of Single Crystal Si Mrs Proceedings. 250: 179. DOI: 10.1557/Proc-250-179 |
0.449 |
|
| 1991 |
Kwok CK, Desu SB. Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films Mrs Proceedings. 243: 393. DOI: 10.1557/Proc-243-393 |
0.54 |
|
| 1991 |
Li CC, Desu SB. Preparation and Characterization of PbTiO 3 and PbZrO 3 Films from Oxide Multilayers Mrs Proceedings. 243: 387. DOI: 10.1557/Proc-243-387 |
0.514 |
|
| 1991 |
Peng CH, Desu SB. Investigation of Structure Development in Mod Pb(Zr x Ti 1-x )O 3 Films by an Optical Method Mrs Proceedings. 243: 335. DOI: 10.1557/Proc-243-335 |
0.419 |
|
| 1991 |
Yoo IK, Desu SB. Modeling of Hysteresis Properties of Lead Zirconate Titanate Thin Films Mrs Proceedings. 243: 329. DOI: 10.1557/Proc-243-329 |
0.49 |
|
| 1991 |
Yoo IK, Desu SB. Fatigue Parameters of Lead Zirconate Titanate Thin Films Mrs Proceedings. 243. DOI: 10.1557/Proc-243-323 |
0.4 |
|
| 1991 |
Chang J, Kwok CK, Desu SB. Transmission Electron Microscopy Study of Mod Plzt and Pnzt Thin Films Mrs Proceedings. 243: 269. DOI: 10.1557/Proc-243-269 |
0.442 |
|
| 1991 |
Peng CH, Chang J, Desu SB. Optical Properties of PZT, PLZT, and PNZT Thin Films Mrs Proceedings. 243: 21. DOI: 10.1557/Proc-243-21 |
0.519 |
|
| 1991 |
Desu SB. Stress and structural relaxation in metallo-organic chemical vapor deposited si2 films Japanese Journal of Applied Physics. 30: L2123-L2126. DOI: 10.1143/JJAP.30.L2123 |
0.407 |
|
| 1991 |
Chiu CC, Li CC, Desu SB. Molten Salt Synthesis of a Complex Perovskite, Pb(Fe0.5Nb0.5)O3 Journal of the American Ceramic Society. 74: 38-41. DOI: 10.1111/J.1151-2916.1991.Tb07293.X |
0.329 |
|
| 1990 |
Kwok CK, Desu SB, Kammerdiner L. Effect of Thermal Processing Conditions on Ferroelectric PZT Thin Films Mrs Proceedings. 200: 83. DOI: 10.1557/Proc-200-83 |
0.504 |
|
| 1990 |
Desu SB, Peng CH, Kammerdiner L, Schuele PJ. Size Effects in Sputtered PZT Thin Films Mrs Proceedings. 200. DOI: 10.1557/Proc-200-319 |
0.527 |
|
| 1990 |
Desu SB, Kwok CK. Characterization of Ferroelectric Thin Films by ESCA Mrs Proceedings. 200. DOI: 10.1557/Proc-200-267 |
0.48 |
|
| 1990 |
Desu SB. Stresses in Ferroelectric Thin Films Mrs Proceedings. 200. DOI: 10.1557/Proc-200-199 |
0.466 |
|
| 1990 |
Desu SB, Taylor JA. Reactions Which Form Both Silicide and Nitride Layers Journal of the American Ceramic Society. 73: 509-515. DOI: 10.1111/J.1151-2916.1990.Tb06546.X |
0.423 |
|
| 1990 |
Desu SB, Payne DA. Interfacial Segregation in Perovskites: III, Microstructure and Electrical Properties Journal of the American Ceramic Society. 73: 3407-3415. DOI: 10.1111/J.1151-2916.1990.Tb06468.X |
0.316 |
|
| 1989 |
Desu SB, Taylor JA. Effect of Ambient Atmosphere on Thin Film Reaction of Si 3 N 4 with Ti Mrs Proceedings. 170: 161. DOI: 10.1557/Proc-170-161 |
0.444 |
|
| 1989 |
Desu SB, Shi T, Kwok CK. Structure, Composition, and Properties of Mocvd ZrO 2 Thin Films Mrs Proceedings. 168: 349. DOI: 10.1557/Proc-168-349 |
0.578 |
|
| 1989 |
Desu SB. Internal Stresses In Amorphous Mocvd SiO 2 Films Mrs Proceedings. 168. DOI: 10.1557/Proc-168-221 |
0.534 |
|
| 1989 |
Taylor JA, Desu SB. Interaction of titanium with silica after rapid thermal annealing in argon, nitrogen, and oxygen Journal of the American Ceramic Society. 72: 1947-1954. DOI: 10.1111/J.1151-2916.1989.Tb06005.X |
0.39 |
|
| Show low-probability matches. |