Timothy D. Sands - Publications

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA 
 2002- Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
Website:
https://engineering.purdue.edu/MSE/news/2013/tim-sands-named-acting-president

239 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Saha B, Perez-Taborda JA, Bahk J, Koh YR, Shakouri A, Martin-Gonzalez M, Sands TD. Temperature-dependent thermal and thermoelectric properties of n -type and p -type Sc1−xMgxN Physical Review B. 97. DOI: 10.1103/Physrevb.97.085301  0.541
2018 Saha B, Shakouri A, Sands TD. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials Applied Physics Reviews. 5: 021101. DOI: 10.1063/1.5011972  0.33
2017 Garbrecht M, Saha B, Schroeder JL, Hultman L, Sands TD. Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution. Scientific Reports. 7: 46092. PMID 28382949 DOI: 10.1038/Srep46092  0.575
2017 Garbrecht M, Hultman L, Fawey MH, Sands TD, Saha B. Void-mediated coherency-strain relaxation and impediment of cubic-to-hexagonal transformation in epitaxial metastable metal/semiconductor TiN/Al0.72Sc0.28N multilayers Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.033402  0.385
2017 Saha B, Garbrecht M, Perez-Taborda JA, Fawey MH, Koh YR, Shakouri A, Martin-Gonzalez M, Hultman L, Sands TD. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN Applied Physics Letters. 110: 252104. DOI: 10.1063/1.4989530  0.644
2017 Saha B, Koh YR, Feser JP, Sadasivam S, Fisher TS, Shakouri A, Sands TD. Phonon wave effects in the thermal transport of epitaxial TiN/(Al,Sc)N metal/semiconductor superlattices Journal of Applied Physics. 121: 015109. DOI: 10.1063/1.4973681  0.537
2017 Garbrecht M, Hultman L, Fawey MH, Sands TD, Saha B. Tailoring of surface plasmon resonances in TiN/(Al0.72Sc0.28)N multilayers by dielectric layer thickness variation Journal of Materials Science. 53: 4001-4009. DOI: 10.1007/S10853-017-1837-4  0.343
2016 Manzano CV, Abad B, Muñoz Rojo M, Koh YR, Hodson SL, Lopez Martinez AM, Xu X, Shakouri A, Sands TD, Borca-Tasciuc T, Martin-Gonzalez M. Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films. Scientific Reports. 6: 19129. PMID 26776726 DOI: 10.1038/Srep19129  0.625
2016 Saha B, Koh YR, Comparan J, Sadasivam S, Schroeder JL, Garbrecht M, Mohammed A, Birch J, Fisher T, Shakouri A, Sands TD. Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.045311  0.659
2016 Saha B, Saber S, Stach EA, Kvam EP, Sands TD. Understanding the Rocksalt-to-Wurtzite phase transformation through microstructural analysis of (Al,Sc)N epitaxial thin films Applied Physics Letters. 109: 172102. DOI: 10.1063/1.4966278  0.357
2016 Garbrecht M, Schroeder JL, Hultman L, Birch J, Saha B, Sands TD. Microstructural evolution and thermal stability of HfN/ScN, ZrN/ScN, and Hf0.5Zr0.5N/ScN metal/semiconductor superlattices Journal of Materials Science. 1-9. DOI: 10.1007/S10853-016-0102-6  0.616
2015 Burmistrova PV, Zakharov DN, Favaloro T, Mohammed A, Stach EA, Shakouri A, Sands TD. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates Journal of Materials Research. 30: 626-634. DOI: 10.1557/Jmr.2015.30  0.809
2015 Schroeder JL, Saha B, Garbrecht M, Schell N, Sands TD, Birch J. Thermal stability of epitaxial cubic-TiN/(Al,Sc)N metal/semiconductor superlattices Journal of Materials Science. DOI: 10.1007/S10853-015-8884-5  0.583
2015 Saha B, Saber S, Naik GV, Boltasseva A, Stach EA, Kvam EP, Sands TD. Development of epitaxial Al<inf>x</inf>Sc<inf>1-x</inf>N for artificially structured metal/semiconductor superlattice metamaterials Physica Status Solidi (B) Basic Research. 252: 251-259. DOI: 10.1002/Pssb.201451314  0.371
2014 Naik GV, Saha B, Liu J, Saber SM, Stach EA, Irudayaraj JM, Sands TD, Shalaev VM, Boltasseva A. Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials. Proceedings of the National Academy of Sciences of the United States of America. 111: 7546-51. PMID 24821762 DOI: 10.1073/Pnas.1319446111  0.406
2014 Schroeder JL, Ewoldt DA, Amatya R, Ram RJ, Shakouri A, Sands TD. Bulk-like laminated nitride Metal/Semiconductor superlattices for thermoelectric devices Journal of Microelectromechanical Systems. 23: 672-680. DOI: 10.1109/Jmems.2013.2282743  0.797
2014 Saha B, Naik GV, Saber S, Akatay C, Stach EA, Shalaev VM, Boltasseva A, Sands TD. TiN/(Al,Sc)N metal/dielectric superlattices and multilayers as hyperbolic metamaterials in the visible spectral range Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125420  0.4
2014 Saha B, Lawrence SK, Schroeder JL, Birch J, Bahr DF, Sands TD. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices Applied Physics Letters. 105. DOI: 10.1063/1.4898067  0.588
2014 Das SR, Akatay C, Mohammad A, Khan MR, Maeda K, Deacon RS, Ishibashi K, Chen YP, Sands TD, Alam MA, Janes DB. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Journal of Applied Physics. 116. DOI: 10.1063/1.4893704  0.615
2013 Saha B, Naik G, Drachev VP, Boltasseva A, Marinero EE, Sands TD. Electronic and optical properties of ScN and (Sc,Mn)N thin films deposited by reactive DC-magnetron sputtering Journal of Applied Physics. 114. DOI: 10.1063/1.4817715  0.358
2013 Jha P, Sands TD, Jackson P, Bomberger C, Favaloro T, Hodson S, Zide J, Xu X, Shakouri A. Cross-plane thermoelectric transport in p-type La0.67Sr 0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices Journal of Applied Physics. 113. DOI: 10.1063/1.4804937  0.679
2013 Burmistrova PV, Maassen J, Favaloro T, Saha B, Salamat S, Rui Koh Y, Lundstrom MS, Shakouri A, Sands TD. Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4801886  0.806
2012 Saha B, Sands TD, Waghmare UV. Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 415303. PMID 23014147 DOI: 10.1088/0953-8984/24/41/415303  0.329
2012 Tang L, Wang Y, Cheng G, Manfra MJ, Sands TD. Free standing GaN nano membrane by laser lift-off method Materials Research Society Symposium Proceedings. 1432: 53-58. DOI: 10.1557/Opl.2012.1054  0.387
2012 Naik GV, Schroeder JL, Ni X, Kildishev AV, Sands TD, Boltasseva A. Titanium nitride as a plasmonic material for visible and near-infrared wavelengths Optical Materials Express. 2: 478-489. DOI: 10.1364/Ome.2.000478  0.573
2012 Jha P, Sands TD, Cassels L, Jackson P, Favaloro T, Kirk B, Zide J, Xu X, Shakouri A. Cross-plane electronic and thermal transport properties of p-type La 0.67Sr 0.33MnO 3/LaMnO 3 perovskite oxide metal/semiconductor superlattices Journal of Applied Physics. 112. DOI: 10.1063/1.4754514  0.694
2012 Choi W, Sands TD. Effect of SrTiO3 thickness on the capacitance-voltage characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO 3/LaVO3 epitaxial heterostructures Applied Physics a: Materials Science and Processing. 109: 285-289. DOI: 10.1007/S00339-012-7245-3  0.344
2011 Zhang Y, DaSilva M, Ashall B, Doyle G, Zerulla D, Sands TD, Lee GU. Magnetic manipulation and optical imaging of an active plasmonic single-particle Fe-Au nanorod. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 15292-8. PMID 22046955 DOI: 10.1021/La203863P  0.578
2011 Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605  0.767
2011 Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q  0.805
2011 Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB. Room temperature device performance of electrodeposited InSb nanowire field effect transistors Applied Physics Letters. 98. DOI: 10.1063/1.3587638  0.602
2011 Saha B, Sands TD, Waghmare UV. First-principles analysis of ZrN/ScN metal/semiconductor superlattices for thermoelectric energy conversion Journal of Applied Physics. 109. DOI: 10.1063/1.3569734  0.323
2011 Choi W, Kim S, Jin YW, Lee SY, Sands TD. Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3561751  0.561
2011 Saha B, Sands TD, Waghmare UV. Electronic structure, vibrational spectrum, and thermal properties of yttrium nitride: A first-principles study Journal of Applied Physics. 109. DOI: 10.1063/1.3561499  0.306
2010 Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455  0.788
2010 Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058  0.589
2010 McCarthy PT, Hodson SL, Sands TD, Fisher TS. Carbon nanotube interfaces for magneto thermoelectric actuation 2010 14th International Heat Transfer Conference, Ihtc 14. 7: 539-545. DOI: 10.1115/IHTC14-22810  0.476
2010 Mohammad A, Das SR, Chen YP, Sands TD, Janes DB. Electrodeposition of indium antimonide nanowires in porous anodic alumina membranes Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508899  0.496
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424  0.748
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024  0.766
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972  0.767
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998  0.8
2010 Choi W, Lee SY, Sands TD. Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3441400  0.575
2010 Saha B, Acharya J, Sands TD, Waghmare UV. Electronic structure, phonons, and thermal properties of ScN, ZrN, and HfN: A first-principles study Journal of Applied Physics. 107. DOI: 10.1063/1.3291117  0.303
2009 DaSilva M, Schneider MM, Wood DS, Kim BJ, Stach EA, Sands TD. The use of polyethyleneimine to control the growth-front morphology of electrochemically deposited gold nanowires for engineered nanogap electrodes. Small (Weinheim An Der Bergstrasse, Germany). 5: 2387-91. PMID 19662646 DOI: 10.1002/Smll.200900379  0.6
2009 Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266  0.751
2009 Franklin AD, Sayer RA, Sands TD, Janes DB, Fisher TS. Vertical carbon nanotube devices with nanoscale lengths controlled without lithography Ieee Transactions On Nanotechnology. 8: 469-476. DOI: 10.1109/Tnano.2009.2012399  0.719
2009 Rawat V, Zakharov DN, Stach EA, Sands TD. Pseudomorphic stabilization of rocksalt GaN in TiN/GaN multilayers and superlattices Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.024114  0.598
2009 Zhang XR, Fisher TS, Raman A, Sands TD. Linear coefficient of thermal expansion of porous anodic alumina thin films from atomic force microscopy Nanoscale and Microscale Thermophysical Engineering. 13: 243-252. DOI: 10.1080/15567260903277039  0.539
2009 Biswas KG, El Matbouly H, Rawat V, Schroeder JL, Sands TD. Self-supporting nanowire arrays templated in sacrificial branched porous anodic alumina for thermoelectric devices Applied Physics Letters. 95. DOI: 10.1063/1.3207756  0.691
2009 Biswas KG, Sands TD, Cola BA, Xu X. Thermal conductivity of bismuth telluride nanowire array-epoxy composite Applied Physics Letters. 94. DOI: 10.1063/1.3143221  0.329
2009 Rawat V, Koh YK, Cahill DG, Sands TD. Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices Journal of Applied Physics. 105. DOI: 10.1063/1.3065092  0.607
2009 Baxter J, Bian Z, Chen G, Danielson D, Dresselhaus MS, Fedorov AG, Fisher TS, Jones CW, Maginn E, Kortshagen U, Manthiram A, Nozik A, Rolison DR, Sands T, Shi L, et al. Nanoscale design to enable the revolution in renewable energy Energy and Environmental Science. 2: 559-588. DOI: 10.1039/B821698C  0.457
2009 Mishra H, Cola BA, Rawat V, Amama PB, Biswas KG, Xu X, Fisher TS, Sands TD. Thermomechanical and thermal contact characteristics of bismuth telluride films electrodeposited on carbon nanotube arrays Advanced Materials. 21: 4280-4283. DOI: 10.1002/Adma.200803705  0.671
2008 Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991  0.743
2008 Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541  0.793
2008 Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002  0.767
2008 Kim S, Schroeder JL, Sands TD. Pulsed selective epitaxial growth of hexagonal GaN microprisms Journal of Crystal Growth. 310: 1107-1111. DOI: 10.1016/J.Jcrysgro.2007.12.014  0.74
2007 Deb P, Westover T, Kim H, Fisher T, Sands T. Field emission from GaN and (Al,Ga) NGaN nanorod heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 15-18. DOI: 10.1116/1.2732735  0.691
2007 Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379  0.808
2007 Amama PB, Cola BA, Sands TD, Xu X, Fisher TS. Dendrimer-assisted controlled growth of carbon nanotubes for enhanced thermal interface conductance Aiche Annual Meeting, Conference Proceedings. DOI: 10.1088/0957-4484/18/38/385303  0.544
2007 Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E  0.751
2007 Maschmann MR, Franklin AD, Sands TD, Fisher TS. Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates Carbon. 45: 2290-2296. DOI: 10.1016/J.Carbon.2007.05.031  0.72
2007 Kim HG, Deb P, Sands T. Nanopatterned contacts to GaN Journal of Electronic Materials. 36: 359-367. DOI: 10.1007/S11664-006-0050-Z  0.704
2007 Biswas K, Qin Y, DaSilva M, Reifenberger R, Sands T. Electrical properties of individual gold nanowires arrayed in a porous anodic alumina template Physica Status Solidi (a) Applications and Materials Science. 204: 3152-3158. DOI: 10.1002/Pssa.200723211  0.716
2007 Biswas KG, DaSilva M, Rawat V, Sands TD. Bi 2Te 3 nanowire array/epoxy composites for thermoelectric power generators and microcoolers Proceedings of the 2nd Energy Nanotechnology International Conference, Enic2007. 1-4.  0.697
2006 Deb P, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R, Sands T. GaN nanorod Schottky and p-n junction diodes. Nano Letters. 6: 2893-8. PMID 17163726 DOI: 10.1021/Nl062152J  0.724
2006 Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+  0.755
2006 Amama PB, Ogebule O, Maschmann MR, Sands TD, Fisher TS. Dendrimer-assisted low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition. Chemical Communications (Cambridge, England). 2899-901. PMID 17007410 DOI: 10.1039/B602623K  0.536
2006 Amama PB, Maschmann MR, Fisher TS, Sands TD. Dendrimer-templated Fe nanoparticles for the growth of single-wall carbon nanotubes by plasma-enhanced CVD. The Journal of Physical Chemistry. B. 110: 10636-44. PMID 16771309 DOI: 10.1021/Jp057302D  0.518
2006 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260. DOI: 10.1557/Proc-0886-F07-01  0.621
2006 Kim HG, Deb P, Sands T. High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN Ieee Transactions On Electron Devices. 53: 2448-2453. DOI: 10.1109/Ted.2006.882287  0.69
2006 Saha SK, Dasilva M, Hang Q, Sands T, Janes DB. A nanocapacitor with giant dielectric permittivity Nanotechnology. 17: 2284-2288. DOI: 10.1088/0957-4484/17/9/036  0.709
2006 Chang WS, Park JW, Rawat V, Sands T, Lee GU. Templated synthesis of gold-iron alloy nanoparticles using pulsed laser deposition Nanotechnology. 17: 5131-5135. DOI: 10.1088/0957-4484/17/20/015  0.532
2006 Maschmann MR, Franklin AD, Amama PB, Zakharov DN, Stach EA, Sands TD, Fisher TS. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates Nanotechnology. 17: 3925-3929. DOI: 10.1088/0957-4484/17/15/052  0.718
2006 Rawat V, Sands T. Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2337784  0.618
2006 Kim HG, Kim SH, Deb P, Sands T. Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN Journal of Electronic Materials. 35: 107-112. DOI: 10.1007/S11664-006-0191-0  0.687
2005 Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T. Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography. Nano Letters. 5: 1847-51. PMID 16159236 DOI: 10.1021/Nl0510762  0.811
2005 Rawat V, Sands TD. TiN/GaN metal/semiconductor multilayer nanocomposites grown by reactive pulsed laser deposition Materials Research Society Symposium Proceedings. 872: 507-512. DOI: 10.1557/Proc-872-J21.4  0.632
2005 Ertekin E, Greaney PA, Chrzan DC, Sands TD. Equilibrium limits of coherency in strained nanowire heterostructures Journal of Applied Physics. 97. DOI: 10.1063/1.1903106  0.332
2004 Sedky S, Schroeder J, Sands T, King TJ, Howe RT. Effect of excimer laser annealing on the structural properties of silicon germanium films Journal of Materials Research. 19: 3503-3511. DOI: 10.1557/Jmr.2004.0450  0.339
2004 Borca-Tasciuc DA, Chen G, Prieto A, Martín-González MS, Stacy A, Sands T, Ryan MA, Fleurial JP. Thermal properties of electrodeposited bismuth telluride nanowires embedded in amorphous alumina Applied Physics Letters. 85: 6001-6003. DOI: 10.1063/1.1834991  0.699
2004 Alex Chediak J, Luo Z, Seo J, Cheung N, Lee LP, Sands TD. Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems Sensors and Actuators, a: Physical. 111: 1-7. DOI: 10.1016/J.Sna.2003.10.015  0.369
2003 Salleo A, Taylor ST, Martin MC, Panero WR, Jeanloz R, Sands T, Génin FY. Laser-driven formation of a high-pressure phase in amorphous silica. Nature Materials. 2: 796-800. PMID 14595406 DOI: 10.1038/Nmat1013  0.525
2003 Prieto AL, Martín-González M, Keyani J, Gronsky R, Sands T, Stacy AM. The electrodeposition of high-density, ordered arrays of Bi1-xSbx nanowires. Journal of the American Chemical Society. 125: 2388-9. PMID 12603115 DOI: 10.1021/Ja029394F  0.765
2003 Ertekin E, Greaney PA, Sands TD, Chrzan DC. Equilibrium analysis of lattice-mismatched nanowire heterostructures Materials Research Society Symposium - Proceedings. 737: 769-774. DOI: 10.1557/Proc-737-F10.4  0.346
2003 Choi W, Sands T. Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon Journal of Materials Research. 18: 1753-1756. DOI: 10.1557/Jmr.2003.0242  0.374
2003 Sands TD. Excimer laser lift-off for packaging and integration of GaN-based light-emitting devices Proceedings of Spie - the International Society For Optical Engineering. 4977: 587-601. DOI: 10.1117/12.483854  0.377
2003 Dougherty GM, Sands TD, Pisano AP. Microfabrication using one-step LPCVD porous polysilicon films Journal of Microelectromechanical Systems. 12: 418-423. DOI: 10.1109/Jmems.2003.811730  0.804
2003 Tsakalakos L, Sands T, Carleton E, Yu KM. Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates Journal of Applied Physics. 94: 4047-4052. DOI: 10.1063/1.1604963  0.408
2003 Jang HW, Sands T, Lee JL. Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN Journal of Applied Physics. 94: 3529-3535. DOI: 10.1063/1.1594814  0.344
2003 Choi W, Sands T. Ferroelectric field effect in epitaxial LaVO3/(Ba,Sr)/TiO3/(Pb,La) (Zr,Ti) O3/(La,Sr) CoO3 heterostructures Journal of Applied Physics. 93: 4761-4765. DOI: 10.1063/1.1560876  0.593
2003 Jang HW, Kim JK, Lee JL, Schroeder J, Sands T. Electrical properties of metal contacts on laser-irradiated n-type GaN Applied Physics Letters. 82: 580-582. DOI: 10.1063/1.1537515  0.591
2003 Martín-González M, Snyder GJ, Prieto AL, Gronsky R, Sands T, Stacy AM. Direct electrodeposition of highly dense 50 nm Bi2Te 3-ySey nanowire arrays Nano Letters. 3: 973-977. DOI: 10.1021/Nl034079S  0.776
2003 Martín-González M, Prieto AL, Knox MS, Gronsky R, Sands T, Stacy AM. Electrodeposition of Bi1-xSbx films and 200-nm wire arrays from a nonaqueous solvent Chemistry of Materials. 15: 1676-1681. DOI: 10.1021/Cm021027F  0.777
2003 Martín-González M, Prieto AL, Gronsky R, Sands T, Stacy AM. High-density 40 nm diameter Sb-rich Bi2-xSbxTe3 nanowire arrays Advanced Materials. 15: 1003-1006. DOI: 10.1002/Adma.200304781  0.756
2003 Kim WC, Abramson AR, Huxtable ST, Majumdar A, Wu Y, Trahey L, Yang P, Stacy A, Sands TD, Gronsky R. Nanowire arrays for thermoelectric devices Proceedings of the Asme Summer Heat Transfer Conference. 2003: 101-104.  0.638
2002 Sedky S, Schroeder J, Sands T, Howe R, King T. Pulsed Laser Annealing of Silicon-Germanium Films Mrs Proceedings. 741. DOI: 10.1557/Proc-741-J4.2  0.35
2002 Chediak JA, Kneissl M, Sands TD. Evaluation of (In,Ga)N films as optical absorption filters for application in integrated fluorescence detection micro-bioanalytical systems Materials Research Society Symposium - Proceedings. 693: 647-652. DOI: 10.1557/Proc-693-I11.13.1  0.365
2002 Dougherty GG, Pisano AA, Sands T. Processing and morphology of permeable polycrystalline silicon thin films Journal of Materials Research. 17: 2235-2242. DOI: 10.1557/Jmr.2002.0329  0.387
2002 Martín-González MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Insights into the electrodeposition of Bi2Te3 Journal of the Electrochemical Society. 149: C546-C554. DOI: 10.1149/1.1509459  0.77
2002 Luo ZS, Cho Y, Loryuenyong V, Sands T, Cheung NW, Yoo MC. Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon Ieee Photonics Technology Letters. 14: 1400-1402. DOI: 10.1109/Lpt.2002.802078  0.358
2002 Martin RW, Kim HS, Cho Y, Edwards PR, Watson IM, Sands T, Cheung NW, Dawson MD. GaN microcavities formed by laser lift-off and plasma etching Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 93: 98-101. DOI: 10.1016/S0921-5107(02)00042-9  0.383
2002 Sander MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Fabrication of high-density, high aspect ratio, large-area bismuth telluride nanowire arrays by electrodeposition into porous anodic alumina templates Advanced Materials. 14: 665-667. DOI: 10.1002/1521-4095(20020503)14:9<665::Aid-Adma665>3.0.Co;2-B  0.68
2001 Prieto AL, Sander MS, Martín-González MS, Gronsky R, Sands T, Stacy AM. Electrodeposition of ordered Bi2Te3 nanowire arrays. Journal of the American Chemical Society. 123: 7160-1. PMID 11459497 DOI: 10.1021/Ja015989J  0.743
2001 Choi W, Sands T. Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C11.1.1  0.549
2001 Dougherty GM, Sands T, Pisano AP. The Materials Science of “Permeable Polysilicon” Thin Films Mrs Proceedings. 687. DOI: 10.1557/Proc-687-B7.3  0.779
2001 Sander MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Control and assessment of structure and composition in bismuth telluride nanowire arrays Materials Research Society Symposium - Proceedings. 676: Y8.35.1-Y8.35.5. DOI: 10.1557/Proc-676-Y8.35  0.661
2001 Choi W, Sands T. Growth of Epitaxial LaVO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures Mrs Proceedings. 666. DOI: 10.1557/Proc-666-F11.8  0.535
2001 Sander MS, Prieto AL, Lin YM, Gronsky R, Stacy AM, Sands TD, Dresselhaus MS. High spatial resolution assessment of the structure, composition, and electronic properties of nanowire arrays Materials Research Society Symposium - Proceedings. 635: C4361-C4366. DOI: 10.1557/Proc-635-C4.36  0.685
2001 Caylor JC, Sander MS, Stacy AM, Harper JS, Gronsky R, Sands T. Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition Journal of Materials Research. 16: 2467-2470. DOI: 10.1557/Jmr.2001.0337  0.72
2001 Kaul AB, Sands TD, Duzer TV. High- T c superconducting NbN films with low particulate density grown at 25 °C using pulsed laser deposition Journal of Materials Research. 16: 1223-1226. DOI: 10.1557/Jmr.2001.0168  0.344
2001 Martin RW, Edwards PR, Kim HS, Kim KS, Kim T, Watson IM, Dawson MD, Cho Y, Sands T, Cheung NW. Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback Applied Physics Letters. 79: 3029-3031. DOI: 10.1063/1.1415769  0.373
2001 Salleo A, Génin FY, Feit MD, Rubenchik AM, Sands T, Mao SS, Russo RE. Energy deposition at front and rear surfaces during picosecond laser interaction with fused silica Applied Physics Letters. 78: 2840-2842. DOI: 10.1063/1.1362332  0.497
2001 Caylor JC, Stacy AM, Gronsky R, Sands T. Pulsed laser deposition of skutterudite thin films Journal of Applied Physics. 89: 3508-3513. DOI: 10.1063/1.1345847  0.698
2001 Sorescu M, Grabias A, Tsakalakos L, Sands T. Comparative Study of the Crystallization Behavior of Fe-Cr-B-Si in Bulk and Thin Film Forms Journal of Materials Synthesis and Processing. 9: 181-185. DOI: 10.1023/A:1014098718851  0.377
2001 Quitoriano N, Wong WS, Tsakalakos L, Cho Y, Sands T. Kinetics of the Pd/In thin-film bilayer reaction: implications for transient-liquid-phase wafer bonding Journal of Electronic Materials. 30: 1471-1475. DOI: 10.1007/S11664-001-0204-Y  0.3
2001 Edwards PR, Martin RW, Kim H-, Kim K-, Cho Y, Watson IM, Sands T, Cheung NW, Dawson MD. InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching Physica Status Solidi B-Basic Solid State Physics. 228: 91-94. DOI: 10.1002/1521-3951(200111)228:1<91::Aid-Pssb91>3.0.Co;2-D  0.344
2000 Knollenberg C, Sands T, Nickles A, White R. Issues in the Flexible Integration of Sputter-Deposited PZT Thin Films with Polysilicon and Ti/Pt Electrode Layers for Use as Sensors and Actuators in Microelectromechanical Systems (MEMS) Mrs Proceedings. 657. DOI: 10.1557/Proc-657-Ee5.35  0.389
2000 Stach EA, Kisielowski C, Wong W, Sands T, Cheung N. Real Time Observation and Characterization of Dislocation Motion, Nitrogen Desorption and Nanopipe Formation in GaN Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T5.8.1  0.391
2000 Stach EA, Kelsch M, Wong W, Nelson E, Sands T, Cheung N. Structural Characterization Of Laser Lift-Off GaN Mrs Proceedings. 617. DOI: 10.1557/Proc-617-J3.5  0.382
2000 Choi W, Sands T, Kim K. Epitaxial growth of semiconducting LaVO3 thin films Journal of Materials Research. 15: 1-3. DOI: 10.1557/Jmr.2000.0001  0.406
2000 Song DW, Liu WL, Zeng T, Borca-Tasciuc T, Chen G, Caylor JC, Sands TD. Thermal conductivity of skutterudite thin films and superlattices Applied Physics Letters. 77: 3854-3856. DOI: 10.1063/1.1329633  0.378
2000 Behnke JF, Sands T. Bimodal spatial distribution of pores in anodically oxidized aluminum thin films Journal of Applied Physics. 88: 6875-6880. DOI: 10.1063/1.1321780  0.304
2000 Wong WS, Sands T, Cheung NW, Kneissl M, Bour DP, Mei P, Romano LT, Johnson NM. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off Applied Physics Letters. 77: 2822-2824. DOI: 10.1063/1.1319505  0.409
2000 Stach EA, Kelsch M, Nelson EC, Wong WS, Sands T, Cheung NW. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off Applied Physics Letters. 77: 1819. DOI: 10.1063/1.1309030  0.39
2000 Tsakalakos L, Sands T. Epitaxial ferroelectric (Pb, La)(Zr, Ti)O3 thin films on stainless steel by excimer laser liftoff Applied Physics Letters. 76: 227-229. DOI: 10.1063/1.125710  0.403
2000 Salleo A, Sands T, Génin F. Machining of transparent materials using an IR and UV nanosecond pulsed laser Applied Physics a Materials Science & Processing. 71: 601-608. DOI: 10.1007/S003390000546  0.495
1999 Caylor JC, Stacy AM, Sands T, Gronsky R. Physical properties of single-phase skutterudite thin-films (CoSb3 and IrSb3) Materials Research Society Symposium - Proceedings. 545: 327-332. DOI: 10.1557/Proc-545-327  0.684
1999 Bandaru PR, Sands TD, Weller D, Marinero EE. Magneto-optical properties of chromium-alloyed manganese bismuth thin films Journal of Applied Physics. 86: 1596-1603. DOI: 10.1063/1.370932  0.352
1999 Sorescu M, Tsakalakos L, Sands T. Fluence effects on the magnetic properties of Fe81B13.5Si3.5C2 metallic glass produced by pulsed laser deposition Journal of Applied Physics. 85: 6652-6654. DOI: 10.1063/1.370126  0.33
1999 Perlin P, Mattos L, Shapiro NA, Kruger J, Wong WS, Sands T, Cheung NW, Weber ER. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate Journal of Applied Physics. 85: 2385-2389. DOI: 10.1063/1.369554  0.323
1999 Wong WS, Cho Y, Weber ER, Sands T, Yu KM, Krüger J, Wengrow AB, Cheung NW. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off Applied Physics Letters. 75: 1887-1889. DOI: 10.1063/1.124861  0.41
1999 Wong WS, Sands T, Cheung NW, Kneissl M, Bour DP, Mei P, Romano LT, Johnson NM. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off Applied Physics Letters. 75: 1360-1362. DOI: 10.1063/1.124693  0.387
1999 Wong WS, Wengrow AB, Cho Y, Salleo A, Quitoriano NJ, Cheung NW, Sands T. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off Journal of Electronic Materials. 28: 1409-1413. DOI: 10.1007/S11664-999-0131-X  0.582
1998 Caylor JC, Stacy AM, Bandaru P, Sands T, Gronsky R. In situ synthesis of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition Materials Research Society Symposium - Proceedings. 526: 399-402. DOI: 10.1557/Proc-526-399  0.687
1998 Bandaru J, Sands T, Tsakalakos L. Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon Journal of Applied Physics. 84: 1121-1125. DOI: 10.1063/1.368112  0.393
1998 Bandaru PR, Sands TD, Kubota Y, Marinero EE. Decoupling the structural and magnetic phase transformations in magneto-optic MnBi thin films by the partial substitution of Cr for Mn Applied Physics Letters. 72: 2337-2339. DOI: 10.1063/1.121355  0.343
1998 Wong WS, Sands T, Cheung NW. Damage-free separation of GaN thin films from sapphire substrates Applied Physics Letters. 72: 599-601. DOI: 10.1063/1.120816  0.435
1997 Wong WS, Schloss LF, Sudhir GS, Linder BP, Yu KM, Weber ER, Sands T, Cheung NW. Pulsed excimer laser processing of AlN/GaN thin films Materials Research Society Symposium - Proceedings. 449: 1011-1016. DOI: 10.1557/Proc-449-1011  0.347
1994 Yilmaz S, Gerhard-Multhaupt R, Bonner WA, Hwang DM, Inam A, Martinez JA, Ravi TS, Sands TD, Wilkens BJ, Wu XD, Venkatesan T. Electro-optic potassium-tantalate-niobate films prepared by pulsed laser deposition from segmented pellets Journal of Materials Research. 9: 1272-1279. DOI: 10.1557/Jmr.1994.1272  0.374
1994 Harshavardhan KS, Rajeswari M, Hwang DM, Chen CY, Sands T, Venkatesan T. Comparison Of The Critical Current Anisotropy In Epitaxial Yba2Cu3O7-X Films On (100) Laalo3 And (100) Yttria Stabilized Zirconia Journal of Materials Research. 9: 270-274. DOI: 10.1557/Jmr.1994.0270  0.335
1994 Tanaka M, Harbison JP, Sands T, Cheeks TL, Keramidas VG, Rothberg GM. Molecular Beam Epitaxy Of Mnas Thin Films On Gaas Journal of Vacuum Science & Technology B. 12: 1091-1094. DOI: 10.1116/1.587095  0.376
1994 Lee J, Ramesh R, Dutta B, Ravi TS, Sands T, Keramidas VG. Ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon Integrated Ferroelectrics. 5: 145-154. DOI: 10.1080/10584589408017007  0.324
1994 Ramesh R, Dutta B, Ravi TS, Lee J, Sands T, Keramidas VG. Scaling of ferroelectric properties in La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O capacitors Applied Physics Letters. 64: 1588-1590. DOI: 10.1063/1.111848  0.322
1994 Ramesh R, Lee J, Sands T, Keramidas VG, Auciello O. Oriented ferroelectric La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer Applied Physics Letters. 64: 2511-2513. DOI: 10.1063/1.111557  0.402
1994 Ramesh R, Sands T, Keramidas VG, Fork DK. Epitaxial ferroelectric thin films for memory applications Materials Science and Engineering B-Advanced Functional Solid-State Materials. 22: 283-289. DOI: 10.1016/0921-5107(94)90258-5  0.411
1994 Tanaka M, Harbison JP, Sands T, DeBoeck J, Cheeks TL, Keramidas VG. Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructures Solid-State Electronics. 37: 1031-1036. DOI: 10.1016/0038-1101(94)90351-4  0.314
1994 Ramesh R, Sands T, Keramidas VG. Template approaches to growth of oriented oxide heterostructures on SiO 2 /Si Journal of Electronic Materials. 23: 19-23. DOI: 10.1007/Bf02651262  0.36
1993 Tanaka M, Harbison JP, Sands TD, Philips BA, DeBoeck J, Cheeks TL, Florez LT, Keramidas VG. Epitaxial ferromagnetic MnGa and (MnNi)Ga thin films with perpendicular magnetization on GaAs Materials Research Society Symposium Proceedings. 313: 507-512. DOI: 10.1557/Proc-313-507  0.355
1993 Ghonge SG, Goo E, Ramesh R, Sands T, Keramidas VG. Microstructure of Epitaxial Ferroelectric YBa2Cu3O7−x/Pb0.9La0.1(Zr0.2Ti0.8)0.975O3/YBa2Cu3O7−x Heterostructures on LaAlO3 Journal of the American Ceramic Society. 76: 3141-3143. DOI: 10.1111/J.1151-2916.1993.Tb06619.X  0.387
1993 Cheeks TL, Brasil MJSP, De Boeck J, Harbison JP, Sands T, Tanaka M, Scherer A, Keramidas VG. Epitaxial τ (Mn,Ni)Al/(Al,Ga)As heterostructures: Magnetic and magneto‐optic properties Journal of Applied Physics. 73: 6121-6123. DOI: 10.1063/1.352721  0.302
1993 Sands T, De Boeck J, Harbison JP, Scherer A, Gilchrist HL, Cheeks TL, Miceli PF, Ramesh R, Keramidas VG. The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs Journal of Applied Physics. 73: 6399-6401. DOI: 10.1063/1.352609  0.38
1993 Ghonge SG, Goo E, Ramesh R, Sands T, Keramidas VG. Microstructure of epitaxial La0.5Sr0.5CoO3/ferroelectric Pb0.9La0.1 (Zr0.2Ti0.8)0.975O3/La0.5Sr0.5CoO3 heterostructures on LaAlO3 Applied Physics Letters. 63: 1628-1630. DOI: 10.1063/1.110717  0.382
1993 Ramesh R, Gilchrist H, Sands T, Keramidas VG, Haakenaasen R, Fork DK. Ferroelectric La‐Sr‐Co‐O/Pb‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on silicon via template growth Applied Physics Letters. 63: 3592-3594. DOI: 10.1063/1.110106  0.372
1993 Reitze DH, Haton E, Ramesh R, Etemad S, Leaird DE, Sands T, Karim Z, Tanguay AR. Electro-optic properties of single crystalline ferroelectric thin films Applied Physics Letters. 63: 596-598. DOI: 10.1063/1.109960  0.365
1993 Ramesh R, Sands T, Keramidas VG. Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films Applied Physics Letters. 63: 731-733. DOI: 10.1063/1.109943  0.384
1993 Tanaka M, Harbison JP, Sands T, Philips B, Cheeks TL, Boeck JD, Florez LT, Keramidas VG. Epitaxial MnGa/NiGa magnetic multilayers on GaAs Applied Physics Letters. 63: 696-698. DOI: 10.1063/1.109932  0.404
1993 Tanaka M, Harbison JP, Sands T, Cheeks TL, Boeck JD, Hwang DM, Florez LT, Keramidas VG. Epitaxial τMnAl/NiAl magnetic multilayers on AlAs/GaAs Applied Physics Letters. 63: 839-841. DOI: 10.1063/1.109871  0.387
1993 Lee J, Johnson L, Safari A, Ramesh R, Sands T, Gilchrist H, Keramidas VG. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors Applied Physics Letters. 63: 27-29. DOI: 10.1063/1.109739  0.379
1993 Tanaka M, Harbison JP, DeBoeck J, Sands T, Philips B, Cheeks TL, Keramidas VG. Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs Applied Physics Letters. 62: 1565-1567. DOI: 10.1063/1.108642  0.362
1993 de Boeck J, Sands T, Harbison J, Scherer A, Gilchrist H, Cheeks T, Tanaka M, Keramidas V. Non-volatile memory characteristics of submicrometre Hall structures fabricated in epitaxial ferromagnetic MnAl films on GaAs Electronics Letters. 29: 421. DOI: 10.1049/El:19930282  0.4
1993 Iycr VR, Kvam EP, Pcrry DL, Ramesh R, Sands TD, Keramidas V. Oriented growth in oxide thin film heterostructures Scripta Metallurgica Et Materiala. 29: 885-888. DOI: 10.1016/0956-716X(93)90376-4  0.368
1993 Tanaka M, Harbison JP, Sands T, Philips B, Cheeks TL, DeBoeck J, Florez LT, Keramidas VG. Epitaxial ferromagnetic MnGa/NiGa multilayers on GaAs Journal of Magnetism and Magnetic Materials. 126: 313-315. DOI: 10.1016/0304-8853(93)90612-6  0.309
1993 Harbison JP, Sands T, De Boeck J, Cheeks TL, Miceli P, Tanaka M, Florez LT, Wilkens BJ, Gilchrist HL, Keramidas VG. MBE growth of ferromagnetic (Mn,Ni)Al thin films on AlAs/GaAs Journal of Crystal Growth. 127: 650-654. DOI: 10.1016/0022-0248(93)90703-Y  0.392
1993 Sands TD. Nanoscale engineering of metal/semiconductor interfaces Jom. 45: 61-64. DOI: 10.1007/Bf03222874  0.359
1992 Ramesh R, Inam A, Chan WK, Wilkens B, Tillerot F, Sands T, Tarascon JM, Bullington J, Evans J. Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y-Ba-Cu-O Integrated Ferroelectrics. 1: 205-212. DOI: 10.1080/10584589208215712  0.394
1992 Ramesh R, Chan WK, Wilkens B, Gilchrist H, Sands T, Tarascon JM, Keramidas VG, Fork DK, Lee J, Safari A. Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures Applied Physics Letters. 61: 1537-1539. DOI: 10.1063/1.107488  0.359
1992 Cheeks TL, Brasil MJSP, Sands T, Harbison JP, Aspnes DE, Keramidas VG, Allen SJ. Magnetic and magneto‐optic properties of epitaxial ferromagnetic τ‐MnAl/(Al,Ga)As heterostructures Applied Physics Letters. 60: 1393-1395. DOI: 10.1063/1.107301  0.359
1992 Harshavardhan KS, Rajeswari M, Hwang DM, Chen CY, Sands T, Venkatesan T, Tkaczyk JE, Lay KW, Safari A. Dominant pinning mechanisms in YBa2Cu3O7−xfilms on single and polycrystalline yttria stabilized zirconia substrates Applied Physics Letters. 60: 1902-1904. DOI: 10.1063/1.107148  0.403
1992 Wang LC, Li YZ, Kappes M, Lau SS, Hwang DM, Schwarz SA, Sands T. The Si/Pd(Si,Ge) ohmic contact on n‐GaAs Applied Physics Letters. 60: 3016-3018. DOI: 10.1063/1.106794  0.325
1992 Schwarz SA, Pudensi MAA, Sands T, Gmitter TJ, Bhat R, Koza M, Wang LC, Lau SS. Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP Applied Physics Letters. 60: 1123-1125. DOI: 10.1063/1.106428  0.345
1992 Ramesh R, Inam A, Sands T, Rogers CT. Thin film YBaCuO high superconductors: structure-property relationships Materials Science and Engineering B-Advanced Functional Solid-State Materials. 14: 188-213. DOI: 10.1016/0921-5107(92)90119-T  0.338
1992 Ramesh R, Chan WK, Wilkens B, Inam A, Tillerot F, Sands TD, Tarascon JM, Keramidas VG. Structure and properties of ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures Journal of Electronic Materials. 21: 513-518. DOI: 10.1007/Bf02655618  0.405
1991 Ramesh R, Chan W, Gilchrist H, Wilkens B, Sands T, Tarascon J, Keramidas V, Evans J, Gealy FD, Fork D. Oxide Ferroelectric /Cuprate Superconductor Heterostructures: Growth and Properties Mrs Proceedings. 243. DOI: 10.1557/Proc-243-477  0.391
1991 Sands T, Harbison J, Allen S, Leadbeater M, Cheeks T, Brasil M, Chang C, Ramesh R, Florez L, Derosa F, Keramidas V. Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization Mrs Proceedings. 231. DOI: 10.1557/Proc-231-341  0.379
1991 Ramesh R, Inam A, Hwang DM, Ravi TS, Sands T, Xi XX, Wu XD, Li Q, Venkatesan T, Kilaas R. The atomic structure of growth interfaces in Y--Ba--Cu--O thin films Journal of Materials Research. 6: 2264-2271. DOI: 10.1557/Jmr.1991.2264  0.391
1991 Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, Schwarz SA, Plumton DL, Kuech TF. An investigation of the Pd‐In‐Ge nonspiking Ohmic contact to n‐GaAs using transmission line measurement, Kelvin, and Cox and Strack structures Journal of Applied Physics. 69: 4364-4372. DOI: 10.1063/1.348360  0.356
1991 Leadbeater ML, Allen SJ, Derosa F, Harbison JP, Sands T, Ramesh R, Florez LT, Keramidas VG. Galvanomagnetic properties of epitaxial MnAl films on GaAs Journal of Applied Physics. 69: 4689-4691. DOI: 10.1063/1.348298  0.378
1991 Harshavardhan KS, Ramesh R, Ravi TS, Sampere S, Inam A, Chang CC, Hull G, Rajeswari M, Sands T, Venkatesan T, Reeves M, Tkaczyk JE, Lay KW. YBa2Cu3O7−xfilms on flexible, partially stabilized zirconia substrates with fully stabilized zirconia buffer layers Applied Physics Letters. 59: 1638-1640. DOI: 10.1063/1.106255  0.412
1991 Ramesh R, Inam A, Wilkens B, Chan WK, Sands T, Tarascon JM, Fork DK, Geballe TH, Evans J, Bullington J. Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon Applied Physics Letters. 59: 1782-1784. DOI: 10.1063/1.106199  0.395
1991 Yablonovitch E, Sands T, Hwang DM, Schnitzer I, Gmitter TJ, Shastry SK, Hill DS, Fan JCC. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond Applied Physics Letters. 59: 3159-3161. DOI: 10.1063/1.105771  0.342
1991 Ramesh R, Inam A, Chan WK, Tillerot F, Wilkens B, Chang CC, Sands T, Tarascon JM, Keramidas VG. Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y‐Ba‐Cu‐O Applied Physics Letters. 59: 3542-3544. DOI: 10.1063/1.105651  0.401
1991 Ramesh R, Inam A, Hwang DM, Sands TD, Chang CC, Hart DL. Surface outgrowth problem in c-axis oriented Y-Ba-Cu-O superconducting thin films Applied Physics Letters. 58: 1557-1559. DOI: 10.1063/1.105176  0.371
1991 Harbison JP, Sands T, Ramesh R, Florez LT, Wilkens BJ, Keramidas VG. MBE growth of ferromagnetic metastable epitaxial MnAl thin films on AlAs/GaAs heterostructures Journal of Crystal Growth. 111: 978-983. DOI: 10.1016/0022-0248(91)91118-T  0.403
1991 Cheeks TL, Sands T, Nahory RE, Harbison JP, Gilchrist HL, Keramidas VG. Design of epitaxial metal/AlAs/GaAs structures for enhancement of the Schottky barrier height Journal of Electronic Materials. 20: 881-884. DOI: 10.1007/Bf02665978  0.35
1990 Olson DA, Yu KM, Washburn J, Sands T. Thin Film Reactions on Alloy Semiconductor Substrates Mrs Proceedings. 202. DOI: 10.1557/Proc-202-713  0.547
1990 PalmstrØM CJ, Harbison JP, Sands T, Ramesh R, Finstad TG, Mounier S, Zhu JG, Carter CB, Florez LT, Keramidas VG. Buried Metal/III-V Semiconductor Heteroepitaxy: Approaches to Lattice Matching Mrs Proceedings. 198: 153. DOI: 10.1557/Proc-198-153  0.325
1990 Harbison JP, Sands T, Ramesh R, Tabatabaie N, Gilchrist HL, Florez LT, Keramidas VG. Metallic quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 8: 242-245. DOI: 10.1116/1.584818  0.359
1990 Schwarz SA, Marshall ED, Allen LH, Palmstrøm CJ, Han CC, Mayer JW, Schwartz CL, Lau SS, Sands T, Shantharama LG, Harbison JP, Florez LT. Backside secondary ion mass spectrometry investigation of ohmic and Schottky contacts on GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2079-2083. DOI: 10.1116/1.577006  0.34
1990 Sands T, Harbison JP, Leadbeater ML, Allen SJ, Hull GW, Ramesh R, Keramidas VG. Epitaxial ferromagnetic τ-MnAl films on GaAs Applied Physics Letters. 57: 2609-2611. DOI: 10.1063/1.103826  0.385
1990 Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. Stable and shallow PdIn ohmic contacts ton‐GaAs Applied Physics Letters. 56: 2129-2131. DOI: 10.1063/1.102993  0.39
1990 Cheeks TL, Sands T, Nahory RE, Harbison J, Tabatabaie N, Gilchrist HL, Wilkens BJ, Keramidas VG. Electrical and optical characterization of back-to-back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double-heterostructure diodes Applied Physics Letters. 56: 1043-1045. DOI: 10.1063/1.102609  0.349
1990 Sands T, Palmstrøm CJ, Harbison JP, Keramidas VG, Tabatabaie N, Cheeks TL, Ramesh R, Silberberg Y. Stable and epitaxial metal/III-V semiconductor heterostructures Materials Science Reports. 5: 99-170. DOI: 10.1016/S0920-2307(05)80003-9  0.344
1990 Sands T, Harbison JP, Ramesh R, Palmstrøm CJ, Florez LT, Keramidas VG. Interface crystallography and stability in epitaxial metal (NiAl, CoAl)/III-V Semiconductor heterostructures Materials Science and Engineering B. 6: 147-157. DOI: 10.1016/0921-5107(90)90091-O  0.39
1990 Allen SJ, Tabatabaie N, Palmstrøm CJ, Mounier S, Hull GW, Sands T, DeRosa F, Gilchrist HL, Garrison KC. Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAs Surface Science. 228: 13-15. DOI: 10.1016/0039-6028(90)90247-6  0.357
1990 Sands T, Harbison JP, Tabatabaie N, Chan WK, Gilchrist HL, Cheeks TL, Florez LT, Keramidas VG. Epitaxial metal(NiAl)-semiconductor(III V) heterostructures by MBE Surface Science. 228: 1-8. DOI: 10.1016/0039-6028(90)90245-4  0.369
1989 Caron-Popowich R, Washburn J, Sands T, Marshall ED. Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization Mrs Proceedings. 148. DOI: 10.1557/Proc-148-53  0.524
1989 Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Cheeks TL, Florez LT, Keramidas VG. Negative transconductance in monocrystalline (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor tunneling transistors Ieee Transactions On Electron Devices. 36: 2620-2621. DOI: 10.1109/16.43740  0.386
1989 Palmstrøm CJ, Fimland BO, Sands T, Garrison KC, Bartynski RA. Epitaxial CoGa and textured CoAs contacts on Ga1-xAl xAs fabricated by molecular-beam epitaxy Journal of Applied Physics. 65: 4753-4758. DOI: 10.1063/1.343228  0.364
1989 Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Florez LT, Keramidas VG. Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As Applied Physics Letters. 54: 2112-2114. DOI: 10.1063/1.101144  0.342
1989 Harbison JP, Sands T, Tabatabaie N, Chan WK, Florez LT, Keramidas VG. MBE growth of AlGaAs/NiAl/AlGaAs heterostructures: A novel epitaxial III–V semiconductor/metal system Journal of Crystal Growth. 95: 425-426. DOI: 10.1016/0022-0248(89)90434-X  0.373
1988 Palmstrøm C, Garrison K, Fimland B, Sands T, Bartynski R. Fabrication and Electrical Properties of MBE Grown Metal-Gallium and Metal-Arsenic Compounds on Ga1-xAlxAs Mrs Proceedings. 144. DOI: 10.1557/Proc-144-583  0.383
1988 Wang LC, Zhang B, Fang F, Marshall ED, Lau SS, Sands T, Kuech TF. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system Journal of Materials Research. 3: 922-930. DOI: 10.1557/Jmr.1988.0922  0.339
1988 Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Keramidas VG. Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor Ieee Transactions On Electron Devices. 35: 2453-2454. DOI: 10.1109/16.8890  0.378
1988 Harbison JP, Sands T, Tabatabaie N, Chan WK, Florez LT, Keramidas VG. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures Applied Physics Letters. 53: 1717-1719. DOI: 10.1063/1.99804  0.387
1988 Sands T. Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors Applied Physics Letters. 52: 197-199. DOI: 10.1063/1.99518  0.365
1988 Sands T, Harbison JP, Chan WK, Schwarz SA, Chang CC, Palmstrøm CJ, Keramidas VG. Epitaxial growth of GaAs/NiAl/GaAs heterostructures Applied Physics Letters. 52: 1216-1218. DOI: 10.1063/1.99162  0.402
1988 Sands T, Chan WK, Chang CC, Chase EW, Keramidas VG. NiAl/n‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing Applied Physics Letters. 52: 1338-1340. DOI: 10.1063/1.99152  0.402
1988 Caron‐Popowich R, Washburn J, Sands T, Kaplan AS. Phase formation in the Pd‐InP system Journal of Applied Physics. 64: 4909-4913. DOI: 10.1063/1.342440  0.568
1988 Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Keramidas VG. Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals Applied Physics Letters. 53: 2528-2530. DOI: 10.1063/1.100198  0.358
1988 Sands T. Compound semiconductor contact metallurgy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 1: 289-312. DOI: 10.1016/0921-5107(88)90010-4  0.384
1987 Sands T, Keramidas VG, Yu AJ, Yu K, Gronsky R, Washburn J. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies Journal of Materials Research. 2: 262-275. DOI: 10.1557/Jmr.1987.0262  0.676
1987 Yu KM, Walukiewicz W, Jaklevic JM, Haller EE, Sands T. Effects of interface reactions on electrical characteristics of metal-GaAs contacts Applied Physics Letters. 51: 189-191. DOI: 10.1063/1.98918  0.404
1987 Banwell T, Nicolet M-, Sands T, Grunthaner PJ. Chemical effects in ion mixing of a ternary system (metal-SiO2) Applied Physics Letters. 50: 571-573. DOI: 10.1063/1.98138  0.345
1987 Sands T, Chang CC, Kaplan AS, Keramidas VG, Krishnan KM, Washburn J. Ni-InP reaction: Formation of amorphous and crystalline ternary phases Applied Physics Letters. 50: 1346-1348. DOI: 10.1063/1.97851  0.54
1987 Yu KM, Sands T, Jaklevic JM, Haller EE. Interfacial interactions of evaporated iridium thin films with (100) GaAs Journal of Applied Physics. 62: 1815-1820. DOI: 10.1063/1.339562  0.366
1987 Sands T, Keramidas VG, Yu KM, Washburn J, Krishnan K. A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) Journal of Applied Physics. 62: 2070-2079. DOI: 10.1063/1.339553  0.56
1987 Yu KM, Cheung SK, Sands T, Jaklevic JM, Haller EE. Correlation between solid‐state reaction and electrical properties of the Rh/GaAs Schottky contact Journal of Applied Physics. 61: 1099-1102. DOI: 10.1063/1.338205  0.409
1986 Hong JM, Wang S, Flood JD, Merz JL, Sands T, Washburn J. Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Journal of Vacuum Science & Technology B. 4: 629-630. DOI: 10.1116/1.583395  0.518
1986 Ding J, Washburn J, Sands T, Keramidas VG. In/GaAs reaction: Effect of an intervening oxide layer Applied Physics Letters. 49: 818-820. DOI: 10.1063/1.97557  0.551
1986 Hong JM, Wang S, Sands T, Washburn J, Flood JD, Merz JL, Low T. Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Applied Physics Letters. 48: 142-144. DOI: 10.1063/1.96977  0.611
1986 Sands T, Keramidas VG, Washburn J, Gronsky R. Structure and composition of NixGaAs Applied Physics Letters. 48: 402-404. DOI: 10.1063/1.96511  0.66
1986 Yu KM, Cheung SK, Sands T, Jaklevic JM, Cheung NW, Haller EE. Schottky barrier degradation of the W/GaAs system after high‐temperature annealing Journal of Applied Physics. 60: 3235-3242. DOI: 10.1063/1.337744  0.363
1986 Sands T, Keramidas VG, Gronsky R, Washburn J. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases Thin Solid Films. 136: 105-122. DOI: 10.1016/0040-6090(86)90113-6  0.667
1986 Sands T. Contacts to Compound Semiconductors Jom. 38: 31-33. DOI: 10.1007/Bf03258577  0.332
1985 Sands T, Keramidas VG, Yu AJ, Yu KM, Gronsky R, Washburn J. Phase Formation Sequence In The Pd-Gaas System Mrs Proceedings. 54. DOI: 10.1557/Proc-54-367  0.547
1985 Sadana DK, Zavada JM, Jenkinson HA, Sands T. High resolution transmission electron microscopy of proton-implanted gallium arsenide Applied Physics Letters. 47: 691-693. DOI: 10.1063/1.96060  0.301
1985 Sands T, Washburn J, Myers E, Sadana DK. On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 337-341. DOI: 10.1016/0168-583X(85)90577-4  0.54
1985 Sands T, Keramidas VG, Gronsky R, Washburn J. Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs Materials Letters. 3: 409-413. DOI: 10.1016/0167-577X(85)90089-8  0.681
1985 Sands T, Washburn J, Gronsky R. Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interface Materials Letters. 3: 247-250. DOI: 10.1016/0167-577X(85)90066-7  0.656
1984 Maszara W, Sadana DK, Rozgonyi GA, Sands T, Washburn J, Wortman JJ. Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations Mrs Proceedings. 35. DOI: 10.1557/Proc-35-277  0.487
1984 Sands T, Washburn J, Gronsky R, Maszara W, Sadana DK, Rozgonyi GA. Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon Applied Physics Letters. 45: 982-984. DOI: 10.1063/1.95446  0.654
1984 Sands T, Sadana DK, Gronsky R, Washburn J. High resolution structural characterization of the amorphous-crystalline interface in Se+-implanted GaAs Applied Physics Letters. 44: 874-876. DOI: 10.1063/1.94963  0.661
1984 Sadana DK, Sands T, Washburn J. High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization Applied Physics Letters. 44: 623-625. DOI: 10.1063/1.94856  0.558
1984 Zhu MF, Suni I, Nicolet M-, Sands T. Reaction of amorphous Ni‐W and Ni‐N‐W films with substrate silicon Journal of Applied Physics. 56: 2740-2745. DOI: 10.1063/1.333804  0.407
1984 Sands T, Washburn J, Gronsky R. Interface morphology and phase distribution in the Cu2-xS/CdS heterojunction: A transmission electron microscope investigation Solar Energy Materials. 10: 349-370. DOI: 10.1016/0165-1633(84)90041-8  0.643
1983 Sadana DK, Sands T, Washburn J. High Resolution Transmission Electron Microscopy Study of Se + Implanted and Annealed GaAs Mrs Proceedings. 27. DOI: 10.1557/Proc-27-311  0.317
1982 SANDS TD, WASHBURN J, GRONSKY R. HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE (CU//2S) AND THE TRANSFORMATION TO DJURLEITE (CU//1//. //9//7 //T//O //1//. //9//4S) Phys Status Solidi A. 551-559. DOI: 10.1002/Pssa.2210720216  0.63
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