Year |
Citation |
Score |
2018 |
Saha B, Perez-Taborda JA, Bahk J, Koh YR, Shakouri A, Martin-Gonzalez M, Sands TD. Temperature-dependent thermal and thermoelectric properties of
n
-type and
p
-type
Sc1−xMgxN Physical Review B. 97. DOI: 10.1103/Physrevb.97.085301 |
0.538 |
|
2018 |
Saha B, Shakouri A, Sands TD. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials Applied Physics Reviews. 5: 021101. DOI: 10.1063/1.5011972 |
0.33 |
|
2017 |
Garbrecht M, Saha B, Schroeder JL, Hultman L, Sands TD. Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution. Scientific Reports. 7: 46092. PMID 28382949 DOI: 10.1038/Srep46092 |
0.574 |
|
2017 |
Garbrecht M, Hultman L, Fawey MH, Sands TD, Saha B. Void-mediated coherency-strain relaxation and impediment of cubic-to-hexagonal transformation in epitaxial metastable metal/semiconductor TiN/Al0.72Sc0.28N multilayers Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.033402 |
0.385 |
|
2017 |
Saha B, Garbrecht M, Perez-Taborda JA, Fawey MH, Koh YR, Shakouri A, Martin-Gonzalez M, Hultman L, Sands TD. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN Applied Physics Letters. 110: 252104. DOI: 10.1063/1.4989530 |
0.642 |
|
2017 |
Saha B, Koh YR, Feser JP, Sadasivam S, Fisher TS, Shakouri A, Sands TD. Phonon wave effects in the thermal transport of epitaxial TiN/(Al,Sc)N metal/semiconductor superlattices Journal of Applied Physics. 121: 015109. DOI: 10.1063/1.4973681 |
0.536 |
|
2017 |
Garbrecht M, Hultman L, Fawey MH, Sands TD, Saha B. Tailoring of surface plasmon resonances in TiN/(Al0.72Sc0.28)N multilayers by dielectric layer thickness variation Journal of Materials Science. 53: 4001-4009. DOI: 10.1007/S10853-017-1837-4 |
0.343 |
|
2016 |
Manzano CV, Abad B, Muñoz Rojo M, Koh YR, Hodson SL, Lopez Martinez AM, Xu X, Shakouri A, Sands TD, Borca-Tasciuc T, Martin-Gonzalez M. Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films. Scientific Reports. 6: 19129. PMID 26776726 DOI: 10.1038/Srep19129 |
0.623 |
|
2016 |
Saha B, Koh YR, Comparan J, Sadasivam S, Schroeder JL, Garbrecht M, Mohammed A, Birch J, Fisher T, Shakouri A, Sands TD. Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.045311 |
0.659 |
|
2016 |
Saha B, Saber S, Stach EA, Kvam EP, Sands TD. Understanding the Rocksalt-to-Wurtzite phase transformation through microstructural analysis of (Al,Sc)N epitaxial thin films Applied Physics Letters. 109: 172102. DOI: 10.1063/1.4966278 |
0.357 |
|
2016 |
Garbrecht M, Schroeder JL, Hultman L, Birch J, Saha B, Sands TD. Microstructural evolution and thermal stability of HfN/ScN, ZrN/ScN, and Hf0.5Zr0.5N/ScN metal/semiconductor superlattices Journal of Materials Science. 1-9. DOI: 10.1007/S10853-016-0102-6 |
0.615 |
|
2015 |
Burmistrova PV, Zakharov DN, Favaloro T, Mohammed A, Stach EA, Shakouri A, Sands TD. Effect of deposition pressure on the microstructure and thermoelectric properties of epitaxial ScN(001) thin films sputtered onto MgO(001) substrates Journal of Materials Research. 30: 626-634. DOI: 10.1557/Jmr.2015.30 |
0.809 |
|
2015 |
Schroeder JL, Saha B, Garbrecht M, Schell N, Sands TD, Birch J. Thermal stability of epitaxial cubic-TiN/(Al,Sc)N metal/semiconductor superlattices Journal of Materials Science. DOI: 10.1007/S10853-015-8884-5 |
0.583 |
|
2015 |
Saha B, Saber S, Naik GV, Boltasseva A, Stach EA, Kvam EP, Sands TD. Development of epitaxial Al<inf>x</inf>Sc<inf>1-x</inf>N for artificially structured metal/semiconductor superlattice metamaterials Physica Status Solidi (B) Basic Research. 252: 251-259. DOI: 10.1002/Pssb.201451314 |
0.371 |
|
2014 |
Naik GV, Saha B, Liu J, Saber SM, Stach EA, Irudayaraj JM, Sands TD, Shalaev VM, Boltasseva A. Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials. Proceedings of the National Academy of Sciences of the United States of America. 111: 7546-51. PMID 24821762 DOI: 10.1073/Pnas.1319446111 |
0.406 |
|
2014 |
Schroeder JL, Ewoldt DA, Amatya R, Ram RJ, Shakouri A, Sands TD. Bulk-like laminated nitride Metal/Semiconductor superlattices for thermoelectric devices Journal of Microelectromechanical Systems. 23: 672-680. DOI: 10.1109/Jmems.2013.2282743 |
0.797 |
|
2014 |
Saha B, Naik GV, Saber S, Akatay C, Stach EA, Shalaev VM, Boltasseva A, Sands TD. TiN/(Al,Sc)N metal/dielectric superlattices and multilayers as hyperbolic metamaterials in the visible spectral range Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.125420 |
0.4 |
|
2014 |
Saha B, Lawrence SK, Schroeder JL, Birch J, Bahr DF, Sands TD. Enhanced hardness in epitaxial TiAlScN alloy thin films and rocksalt TiN/(Al,Sc)N superlattices Applied Physics Letters. 105. DOI: 10.1063/1.4898067 |
0.587 |
|
2014 |
Das SR, Akatay C, Mohammad A, Khan MR, Maeda K, Deacon RS, Ishibashi K, Chen YP, Sands TD, Alam MA, Janes DB. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties Journal of Applied Physics. 116. DOI: 10.1063/1.4893704 |
0.615 |
|
2013 |
Saha B, Naik G, Drachev VP, Boltasseva A, Marinero EE, Sands TD. Electronic and optical properties of ScN and (Sc,Mn)N thin films deposited by reactive DC-magnetron sputtering Journal of Applied Physics. 114. DOI: 10.1063/1.4817715 |
0.358 |
|
2013 |
Jha P, Sands TD, Jackson P, Bomberger C, Favaloro T, Hodson S, Zide J, Xu X, Shakouri A. Cross-plane thermoelectric transport in p-type La0.67Sr 0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices Journal of Applied Physics. 113. DOI: 10.1063/1.4804937 |
0.676 |
|
2013 |
Burmistrova PV, Maassen J, Favaloro T, Saha B, Salamat S, Rui Koh Y, Lundstrom MS, Shakouri A, Sands TD. Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4801886 |
0.806 |
|
2012 |
Saha B, Sands TD, Waghmare UV. Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 415303. PMID 23014147 DOI: 10.1088/0953-8984/24/41/415303 |
0.329 |
|
2012 |
Tang L, Wang Y, Cheng G, Manfra MJ, Sands TD. Free standing GaN nano membrane by laser lift-off method Materials Research Society Symposium Proceedings. 1432: 53-58. DOI: 10.1557/Opl.2012.1054 |
0.387 |
|
2012 |
Naik GV, Schroeder JL, Ni X, Kildishev AV, Sands TD, Boltasseva A. Titanium nitride as a plasmonic material for visible and near-infrared wavelengths Optical Materials Express. 2: 478-489. DOI: 10.1364/Ome.2.000478 |
0.572 |
|
2012 |
Jha P, Sands TD, Cassels L, Jackson P, Favaloro T, Kirk B, Zide J, Xu X, Shakouri A. Cross-plane electronic and thermal transport properties of p-type La 0.67Sr 0.33MnO 3/LaMnO 3 perovskite oxide metal/semiconductor superlattices Journal of Applied Physics. 112. DOI: 10.1063/1.4754514 |
0.691 |
|
2012 |
Choi W, Sands TD. Effect of SrTiO3 thickness on the capacitance-voltage characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO 3/LaVO3 epitaxial heterostructures Applied Physics a: Materials Science and Processing. 109: 285-289. DOI: 10.1007/S00339-012-7245-3 |
0.344 |
|
2011 |
Zhang Y, DaSilva M, Ashall B, Doyle G, Zerulla D, Sands TD, Lee GU. Magnetic manipulation and optical imaging of an active plasmonic single-particle Fe-Au nanorod. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 15292-8. PMID 22046955 DOI: 10.1021/La203863P |
0.577 |
|
2011 |
Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605 |
0.766 |
|
2011 |
Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q |
0.805 |
|
2011 |
Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB. Room temperature device performance of electrodeposited InSb nanowire field effect transistors Applied Physics Letters. 98. DOI: 10.1063/1.3587638 |
0.602 |
|
2011 |
Saha B, Sands TD, Waghmare UV. First-principles analysis of ZrN/ScN metal/semiconductor superlattices for thermoelectric energy conversion Journal of Applied Physics. 109. DOI: 10.1063/1.3569734 |
0.323 |
|
2011 |
Choi W, Kim S, Jin YW, Lee SY, Sands TD. Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3561751 |
0.552 |
|
2011 |
Saha B, Sands TD, Waghmare UV. Electronic structure, vibrational spectrum, and thermal properties of yttrium nitride: A first-principles study Journal of Applied Physics. 109. DOI: 10.1063/1.3561499 |
0.307 |
|
2010 |
Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455 |
0.788 |
|
2010 |
Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058 |
0.589 |
|
2010 |
McCarthy PT, Hodson SL, Sands TD, Fisher TS. Carbon nanotube interfaces for magneto thermoelectric actuation 2010 14th International Heat Transfer Conference, Ihtc 14. 7: 539-545. DOI: 10.1115/IHTC14-22810 |
0.475 |
|
2010 |
Mohammad A, Das SR, Chen YP, Sands TD, Janes DB. Electrodeposition of indium antimonide nanowires in porous anodic alumina membranes Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508899 |
0.496 |
|
2010 |
Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424 |
0.748 |
|
2010 |
Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024 |
0.766 |
|
2010 |
Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972 |
0.767 |
|
2010 |
Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998 |
0.8 |
|
2010 |
Choi W, Lee SY, Sands TD. Capacitance-voltage characteristics of SrTiO3/LaVO3 epitaxial heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3441400 |
0.567 |
|
2010 |
Saha B, Acharya J, Sands TD, Waghmare UV. Electronic structure, phonons, and thermal properties of ScN, ZrN, and HfN: A first-principles study Journal of Applied Physics. 107. DOI: 10.1063/1.3291117 |
0.304 |
|
2009 |
DaSilva M, Schneider MM, Wood DS, Kim BJ, Stach EA, Sands TD. The use of polyethyleneimine to control the growth-front morphology of electrochemically deposited gold nanowires for engineered nanogap electrodes. Small (Weinheim An Der Bergstrasse, Germany). 5: 2387-91. PMID 19662646 DOI: 10.1002/Smll.200900379 |
0.599 |
|
2009 |
Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 821-826. DOI: 10.1116/1.3054266 |
0.746 |
|
2009 |
Franklin AD, Sayer RA, Sands TD, Janes DB, Fisher TS. Vertical carbon nanotube devices with nanoscale lengths controlled without lithography Ieee Transactions On Nanotechnology. 8: 469-476. DOI: 10.1109/Tnano.2009.2012399 |
0.713 |
|
2009 |
Rawat V, Zakharov DN, Stach EA, Sands TD. Pseudomorphic stabilization of rocksalt GaN in TiN/GaN multilayers and superlattices Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.024114 |
0.597 |
|
2009 |
Zhang XR, Fisher TS, Raman A, Sands TD. Linear coefficient of thermal expansion of porous anodic alumina thin films from atomic force microscopy Nanoscale and Microscale Thermophysical Engineering. 13: 243-252. DOI: 10.1080/15567260903277039 |
0.538 |
|
2009 |
Biswas KG, El Matbouly H, Rawat V, Schroeder JL, Sands TD. Self-supporting nanowire arrays templated in sacrificial branched porous anodic alumina for thermoelectric devices Applied Physics Letters. 95. DOI: 10.1063/1.3207756 |
0.69 |
|
2009 |
Biswas KG, Sands TD, Cola BA, Xu X. Thermal conductivity of bismuth telluride nanowire array-epoxy composite Applied Physics Letters. 94. DOI: 10.1063/1.3143221 |
0.329 |
|
2009 |
Rawat V, Koh YK, Cahill DG, Sands TD. Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices Journal of Applied Physics. 105. DOI: 10.1063/1.3065092 |
0.605 |
|
2009 |
Baxter J, Bian Z, Chen G, Danielson D, Dresselhaus MS, Fedorov AG, Fisher TS, Jones CW, Maginn E, Kortshagen U, Manthiram A, Nozik A, Rolison DR, Sands T, Shi L, et al. Nanoscale design to enable the revolution in renewable energy Energy and Environmental Science. 2: 559-588. DOI: 10.1039/B821698C |
0.456 |
|
2009 |
Mishra H, Cola BA, Rawat V, Amama PB, Biswas KG, Xu X, Fisher TS, Sands TD. Thermomechanical and thermal contact characteristics of bismuth telluride films electrodeposited on carbon nanotube arrays Advanced Materials. 21: 4280-4283. DOI: 10.1002/Adma.200803705 |
0.669 |
|
2008 |
Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films Applied Physics Letters. 93. DOI: 10.1063/1.2957991 |
0.737 |
|
2008 |
Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541 |
0.793 |
|
2008 |
Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si Applied Physics Letters. 92. DOI: 10.1063/1.2831002 |
0.762 |
|
2008 |
Kim S, Schroeder JL, Sands TD. Pulsed selective epitaxial growth of hexagonal GaN microprisms Journal of Crystal Growth. 310: 1107-1111. DOI: 10.1016/J.Jcrysgro.2007.12.014 |
0.721 |
|
2007 |
Deb P, Westover T, Kim H, Fisher T, Sands T. Field emission from GaN and (Al,Ga) NGaN nanorod heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 15-18. DOI: 10.1116/1.2732735 |
0.69 |
|
2007 |
Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 343-347. DOI: 10.1116/1.2647379 |
0.808 |
|
2007 |
Amama PB, Cola BA, Sands TD, Xu X, Fisher TS. Dendrimer-assisted controlled growth of carbon nanotubes for enhanced thermal interface conductance Aiche Annual Meeting, Conference Proceedings. DOI: 10.1088/0957-4484/18/38/385303 |
0.543 |
|
2007 |
Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes Journal of Physical Chemistry C. 111: 13756-13762. DOI: 10.1021/Jp074411E |
0.746 |
|
2007 |
Maschmann MR, Franklin AD, Sands TD, Fisher TS. Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates Carbon. 45: 2290-2296. DOI: 10.1016/J.Carbon.2007.05.031 |
0.713 |
|
2007 |
Kim HG, Deb P, Sands T. Nanopatterned contacts to GaN Journal of Electronic Materials. 36: 359-367. DOI: 10.1007/S11664-006-0050-Z |
0.701 |
|
2007 |
Biswas K, Qin Y, DaSilva M, Reifenberger R, Sands T. Electrical properties of individual gold nanowires arrayed in a porous anodic alumina template Physica Status Solidi (a) Applications and Materials Science. 204: 3152-3158. DOI: 10.1002/Pssa.200723211 |
0.716 |
|
2007 |
Biswas KG, DaSilva M, Rawat V, Sands TD. Bi 2Te 3 nanowire array/epoxy composites for thermoelectric power generators and microcoolers Proceedings of the 2nd Energy Nanotechnology International Conference, Enic2007. 1-4. |
0.696 |
|
2006 |
Deb P, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R, Sands T. GaN nanorod Schottky and p-n junction diodes. Nano Letters. 6: 2893-8. PMID 17163726 DOI: 10.1021/Nl062152J |
0.72 |
|
2006 |
Maschmann MR, Franklin AD, Scott A, Janes DB, Sands TD, Fisher TS. Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes. Nano Letters. 6: 2712-7. PMID 17163693 DOI: 10.1021/Nl061652+ |
0.751 |
|
2006 |
Amama PB, Ogebule O, Maschmann MR, Sands TD, Fisher TS. Dendrimer-assisted low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition. Chemical Communications (Cambridge, England). 2899-901. PMID 17007410 DOI: 10.1039/B602623K |
0.535 |
|
2006 |
Amama PB, Maschmann MR, Fisher TS, Sands TD. Dendrimer-templated Fe nanoparticles for the growth of single-wall carbon nanotubes by plasma-enhanced CVD. The Journal of Physical Chemistry. B. 110: 10636-44. PMID 16771309 DOI: 10.1021/Jp057302D |
0.517 |
|
2006 |
Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260. DOI: 10.1557/Proc-0886-F07-01 |
0.619 |
|
2006 |
Kim HG, Deb P, Sands T. High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN Ieee Transactions On Electron Devices. 53: 2448-2453. DOI: 10.1109/Ted.2006.882287 |
0.686 |
|
2006 |
Saha SK, Dasilva M, Hang Q, Sands T, Janes DB. A nanocapacitor with giant dielectric permittivity Nanotechnology. 17: 2284-2288. DOI: 10.1088/0957-4484/17/9/036 |
0.709 |
|
2006 |
Chang WS, Park JW, Rawat V, Sands T, Lee GU. Templated synthesis of gold-iron alloy nanoparticles using pulsed laser deposition Nanotechnology. 17: 5131-5135. DOI: 10.1088/0957-4484/17/20/015 |
0.53 |
|
2006 |
Maschmann MR, Franklin AD, Amama PB, Zakharov DN, Stach EA, Sands TD, Fisher TS. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates Nanotechnology. 17: 3925-3929. DOI: 10.1088/0957-4484/17/15/052 |
0.711 |
|
2006 |
Rawat V, Sands T. Growth of TiN/GaN metal/semiconductor multilayers by reactive pulsed laser deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2337784 |
0.616 |
|
2006 |
Kim HG, Kim SH, Deb P, Sands T. Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN Journal of Electronic Materials. 35: 107-112. DOI: 10.1007/S11664-006-0191-0 |
0.683 |
|
2005 |
Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T. Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography. Nano Letters. 5: 1847-51. PMID 16159236 DOI: 10.1021/Nl0510762 |
0.811 |
|
2005 |
Rawat V, Sands TD. TiN/GaN metal/semiconductor multilayer nanocomposites grown by reactive pulsed laser deposition Materials Research Society Symposium Proceedings. 872: 507-512. DOI: 10.1557/Proc-872-J21.4 |
0.63 |
|
2005 |
Ertekin E, Greaney PA, Chrzan DC, Sands TD. Equilibrium limits of coherency in strained nanowire heterostructures Journal of Applied Physics. 97. DOI: 10.1063/1.1903106 |
0.332 |
|
2004 |
Sedky S, Schroeder J, Sands T, King TJ, Howe RT. Effect of excimer laser annealing on the structural properties of silicon germanium films Journal of Materials Research. 19: 3503-3511. DOI: 10.1557/Jmr.2004.0450 |
0.339 |
|
2004 |
Borca-Tasciuc DA, Chen G, Prieto A, Martín-González MS, Stacy A, Sands T, Ryan MA, Fleurial JP. Thermal properties of electrodeposited bismuth telluride nanowires embedded in amorphous alumina Applied Physics Letters. 85: 6001-6003. DOI: 10.1063/1.1834991 |
0.698 |
|
2004 |
Alex Chediak J, Luo Z, Seo J, Cheung N, Lee LP, Sands TD. Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems Sensors and Actuators, a: Physical. 111: 1-7. DOI: 10.1016/J.Sna.2003.10.015 |
0.369 |
|
2003 |
Salleo A, Taylor ST, Martin MC, Panero WR, Jeanloz R, Sands T, Génin FY. Laser-driven formation of a high-pressure phase in amorphous silica. Nature Materials. 2: 796-800. PMID 14595406 DOI: 10.1038/Nmat1013 |
0.523 |
|
2003 |
Prieto AL, Martín-González M, Keyani J, Gronsky R, Sands T, Stacy AM. The electrodeposition of high-density, ordered arrays of Bi1-xSbx nanowires. Journal of the American Chemical Society. 125: 2388-9. PMID 12603115 DOI: 10.1021/Ja029394F |
0.764 |
|
2003 |
Ertekin E, Greaney PA, Sands TD, Chrzan DC. Equilibrium analysis of lattice-mismatched nanowire heterostructures Materials Research Society Symposium - Proceedings. 737: 769-774. DOI: 10.1557/Proc-737-F10.4 |
0.345 |
|
2003 |
Choi W, Sands T. Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon Journal of Materials Research. 18: 1753-1756. DOI: 10.1557/Jmr.2003.0242 |
0.374 |
|
2003 |
Sands TD. Excimer laser lift-off for packaging and integration of GaN-based light-emitting devices Proceedings of Spie - the International Society For Optical Engineering. 4977: 587-601. DOI: 10.1117/12.483854 |
0.377 |
|
2003 |
Dougherty GM, Sands TD, Pisano AP. Microfabrication using one-step LPCVD porous polysilicon films Journal of Microelectromechanical Systems. 12: 418-423. DOI: 10.1109/Jmems.2003.811730 |
0.804 |
|
2003 |
Tsakalakos L, Sands T, Carleton E, Yu KM. Modification of (Pb,La)(Zr,Ti)O3 thin films during pulsed laser liftoff from MgO substrates Journal of Applied Physics. 94: 4047-4052. DOI: 10.1063/1.1604963 |
0.408 |
|
2003 |
Jang HW, Sands T, Lee JL. Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN Journal of Applied Physics. 94: 3529-3535. DOI: 10.1063/1.1594814 |
0.344 |
|
2003 |
Choi W, Sands T. Ferroelectric field effect in epitaxial LaVO3/(Ba,Sr)/TiO3/(Pb,La) (Zr,Ti) O3/(La,Sr) CoO3 heterostructures Journal of Applied Physics. 93: 4761-4765. DOI: 10.1063/1.1560876 |
0.585 |
|
2003 |
Jang HW, Kim JK, Lee JL, Schroeder J, Sands T. Electrical properties of metal contacts on laser-irradiated n-type GaN Applied Physics Letters. 82: 580-582. DOI: 10.1063/1.1537515 |
0.59 |
|
2003 |
Martín-González M, Snyder GJ, Prieto AL, Gronsky R, Sands T, Stacy AM. Direct electrodeposition of highly dense 50 nm Bi2Te 3-ySey nanowire arrays Nano Letters. 3: 973-977. DOI: 10.1021/Nl034079S |
0.775 |
|
2003 |
Martín-González M, Prieto AL, Knox MS, Gronsky R, Sands T, Stacy AM. Electrodeposition of Bi1-xSbx films and 200-nm wire arrays from a nonaqueous solvent Chemistry of Materials. 15: 1676-1681. DOI: 10.1021/Cm021027F |
0.776 |
|
2003 |
Martín-González M, Prieto AL, Gronsky R, Sands T, Stacy AM. High-density 40 nm diameter Sb-rich Bi2-xSbxTe3 nanowire arrays Advanced Materials. 15: 1003-1006. DOI: 10.1002/Adma.200304781 |
0.755 |
|
2003 |
Kim WC, Abramson AR, Huxtable ST, Majumdar A, Wu Y, Trahey L, Yang P, Stacy A, Sands TD, Gronsky R. Nanowire arrays for thermoelectric devices Proceedings of the Asme Summer Heat Transfer Conference. 2003: 101-104. |
0.638 |
|
2002 |
Sedky S, Schroeder J, Sands T, Howe R, King T. Pulsed Laser Annealing of Silicon-Germanium Films Mrs Proceedings. 741. DOI: 10.1557/Proc-741-J4.2 |
0.35 |
|
2002 |
Chediak JA, Kneissl M, Sands TD. Evaluation of (In,Ga)N films as optical absorption filters for application in integrated fluorescence detection micro-bioanalytical systems Materials Research Society Symposium - Proceedings. 693: 647-652. DOI: 10.1557/Proc-693-I11.13.1 |
0.365 |
|
2002 |
Dougherty GG, Pisano AA, Sands T. Processing and morphology of permeable polycrystalline silicon thin films Journal of Materials Research. 17: 2235-2242. DOI: 10.1557/Jmr.2002.0329 |
0.387 |
|
2002 |
Martín-González MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Insights into the electrodeposition of Bi2Te3 Journal of the Electrochemical Society. 149: C546-C554. DOI: 10.1149/1.1509459 |
0.769 |
|
2002 |
Luo ZS, Cho Y, Loryuenyong V, Sands T, Cheung NW, Yoo MC. Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon Ieee Photonics Technology Letters. 14: 1400-1402. DOI: 10.1109/Lpt.2002.802078 |
0.358 |
|
2002 |
Martin RW, Kim HS, Cho Y, Edwards PR, Watson IM, Sands T, Cheung NW, Dawson MD. GaN microcavities formed by laser lift-off and plasma etching Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 93: 98-101. DOI: 10.1016/S0921-5107(02)00042-9 |
0.383 |
|
2002 |
Sander MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Fabrication of high-density, high aspect ratio, large-area bismuth telluride nanowire arrays by electrodeposition into porous anodic alumina templates Advanced Materials. 14: 665-667. DOI: 10.1002/1521-4095(20020503)14:9<665::Aid-Adma665>3.0.Co;2-B |
0.68 |
|
2001 |
Prieto AL, Sander MS, Martín-González MS, Gronsky R, Sands T, Stacy AM. Electrodeposition of ordered Bi2Te3 nanowire arrays. Journal of the American Chemical Society. 123: 7160-1. PMID 11459497 DOI: 10.1021/Ja015989J |
0.742 |
|
2001 |
Choi W, Sands T. Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C11.1.1 |
0.539 |
|
2001 |
Dougherty GM, Sands T, Pisano AP. The Materials Science of “Permeable Polysilicon” Thin Films Mrs Proceedings. 687. DOI: 10.1557/Proc-687-B7.3 |
0.779 |
|
2001 |
Sander MS, Prieto AL, Gronsky R, Sands T, Stacy AM. Control and assessment of structure and composition in bismuth telluride nanowire arrays Materials Research Society Symposium - Proceedings. 676: Y8.35.1-Y8.35.5. DOI: 10.1557/Proc-676-Y8.35 |
0.661 |
|
2001 |
Choi W, Sands T. Growth of Epitaxial LaVO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures Mrs Proceedings. 666. DOI: 10.1557/Proc-666-F11.8 |
0.526 |
|
2001 |
Sander MS, Prieto AL, Lin YM, Gronsky R, Stacy AM, Sands TD, Dresselhaus MS. High spatial resolution assessment of the structure, composition, and electronic properties of nanowire arrays Materials Research Society Symposium - Proceedings. 635: C4361-C4366. DOI: 10.1557/Proc-635-C4.36 |
0.685 |
|
2001 |
Caylor JC, Sander MS, Stacy AM, Harper JS, Gronsky R, Sands T. Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition Journal of Materials Research. 16: 2467-2470. DOI: 10.1557/Jmr.2001.0337 |
0.72 |
|
2001 |
Kaul AB, Sands TD, Duzer TV. High- T c superconducting NbN films with low particulate density grown at 25 °C using pulsed laser deposition Journal of Materials Research. 16: 1223-1226. DOI: 10.1557/Jmr.2001.0168 |
0.344 |
|
2001 |
Martin RW, Edwards PR, Kim HS, Kim KS, Kim T, Watson IM, Dawson MD, Cho Y, Sands T, Cheung NW. Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback Applied Physics Letters. 79: 3029-3031. DOI: 10.1063/1.1415769 |
0.373 |
|
2001 |
Salleo A, Génin FY, Feit MD, Rubenchik AM, Sands T, Mao SS, Russo RE. Energy deposition at front and rear surfaces during picosecond laser interaction with fused silica Applied Physics Letters. 78: 2840-2842. DOI: 10.1063/1.1362332 |
0.494 |
|
2001 |
Caylor JC, Stacy AM, Gronsky R, Sands T. Pulsed laser deposition of skutterudite thin films Journal of Applied Physics. 89: 3508-3513. DOI: 10.1063/1.1345847 |
0.698 |
|
2001 |
Sorescu M, Grabias A, Tsakalakos L, Sands T. Comparative Study of the Crystallization Behavior of Fe-Cr-B-Si in Bulk and Thin Film Forms Journal of Materials Synthesis and Processing. 9: 181-185. DOI: 10.1023/A:1014098718851 |
0.377 |
|
2001 |
Quitoriano N, Wong WS, Tsakalakos L, Cho Y, Sands T. Kinetics of the Pd/In thin-film bilayer reaction: implications for transient-liquid-phase wafer bonding Journal of Electronic Materials. 30: 1471-1475. DOI: 10.1007/S11664-001-0204-Y |
0.3 |
|
2001 |
Edwards PR, Martin RW, Kim H-, Kim K-, Cho Y, Watson IM, Sands T, Cheung NW, Dawson MD. InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching Physica Status Solidi B-Basic Solid State Physics. 228: 91-94. DOI: 10.1002/1521-3951(200111)228:1<91::Aid-Pssb91>3.0.Co;2-D |
0.344 |
|
2000 |
Knollenberg C, Sands T, Nickles A, White R. Issues in the Flexible Integration of Sputter-Deposited PZT Thin Films with Polysilicon and Ti/Pt Electrode Layers for Use as Sensors and Actuators in Microelectromechanical Systems (MEMS) Mrs Proceedings. 657. DOI: 10.1557/Proc-657-Ee5.35 |
0.388 |
|
2000 |
Stach EA, Kisielowski C, Wong W, Sands T, Cheung N. Real Time Observation and Characterization of Dislocation Motion, Nitrogen Desorption and Nanopipe Formation in GaN Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T5.8.1 |
0.391 |
|
2000 |
Stach EA, Kelsch M, Wong W, Nelson E, Sands T, Cheung N. Structural Characterization Of Laser Lift-Off GaN Mrs Proceedings. 617. DOI: 10.1557/Proc-617-J3.5 |
0.382 |
|
2000 |
Choi W, Sands T, Kim K. Epitaxial growth of semiconducting LaVO3 thin films Journal of Materials Research. 15: 1-3. DOI: 10.1557/Jmr.2000.0001 |
0.406 |
|
2000 |
Song DW, Liu WL, Zeng T, Borca-Tasciuc T, Chen G, Caylor JC, Sands TD. Thermal conductivity of skutterudite thin films and superlattices Applied Physics Letters. 77: 3854-3856. DOI: 10.1063/1.1329633 |
0.378 |
|
2000 |
Behnke JF, Sands T. Bimodal spatial distribution of pores in anodically oxidized aluminum thin films Journal of Applied Physics. 88: 6875-6880. DOI: 10.1063/1.1321780 |
0.304 |
|
2000 |
Wong WS, Sands T, Cheung NW, Kneissl M, Bour DP, Mei P, Romano LT, Johnson NM. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off Applied Physics Letters. 77: 2822-2824. DOI: 10.1063/1.1319505 |
0.409 |
|
2000 |
Stach EA, Kelsch M, Nelson EC, Wong WS, Sands T, Cheung NW. Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off Applied Physics Letters. 77: 1819. DOI: 10.1063/1.1309030 |
0.39 |
|
2000 |
Tsakalakos L, Sands T. Epitaxial ferroelectric (Pb, La)(Zr, Ti)O3 thin films on stainless steel by excimer laser liftoff Applied Physics Letters. 76: 227-229. DOI: 10.1063/1.125710 |
0.403 |
|
2000 |
Salleo A, Sands T, Génin F. Machining of transparent materials using an IR and UV nanosecond pulsed laser Applied Physics a Materials Science & Processing. 71: 601-608. DOI: 10.1007/S003390000546 |
0.492 |
|
1999 |
Caylor JC, Stacy AM, Sands T, Gronsky R. Physical properties of single-phase skutterudite thin-films (CoSb3 and IrSb3) Materials Research Society Symposium - Proceedings. 545: 327-332. DOI: 10.1557/Proc-545-327 |
0.684 |
|
1999 |
Bandaru PR, Sands TD, Weller D, Marinero EE. Magneto-optical properties of chromium-alloyed manganese bismuth thin films Journal of Applied Physics. 86: 1596-1603. DOI: 10.1063/1.370932 |
0.352 |
|
1999 |
Sorescu M, Tsakalakos L, Sands T. Fluence effects on the magnetic properties of Fe81B13.5Si3.5C2 metallic glass produced by pulsed laser deposition Journal of Applied Physics. 85: 6652-6654. DOI: 10.1063/1.370126 |
0.33 |
|
1999 |
Perlin P, Mattos L, Shapiro NA, Kruger J, Wong WS, Sands T, Cheung NW, Weber ER. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate Journal of Applied Physics. 85: 2385-2389. DOI: 10.1063/1.369554 |
0.323 |
|
1999 |
Wong WS, Cho Y, Weber ER, Sands T, Yu KM, Krüger J, Wengrow AB, Cheung NW. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off Applied Physics Letters. 75: 1887-1889. DOI: 10.1063/1.124861 |
0.41 |
|
1999 |
Wong WS, Sands T, Cheung NW, Kneissl M, Bour DP, Mei P, Romano LT, Johnson NM. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off Applied Physics Letters. 75: 1360-1362. DOI: 10.1063/1.124693 |
0.387 |
|
1999 |
Wong WS, Wengrow AB, Cho Y, Salleo A, Quitoriano NJ, Cheung NW, Sands T. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off Journal of Electronic Materials. 28: 1409-1413. DOI: 10.1007/S11664-999-0131-X |
0.58 |
|
1998 |
Caylor JC, Stacy AM, Bandaru P, Sands T, Gronsky R. In situ synthesis of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition Materials Research Society Symposium - Proceedings. 526: 399-402. DOI: 10.1557/Proc-526-399 |
0.687 |
|
1998 |
Bandaru J, Sands T, Tsakalakos L. Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon Journal of Applied Physics. 84: 1121-1125. DOI: 10.1063/1.368112 |
0.392 |
|
1998 |
Bandaru PR, Sands TD, Kubota Y, Marinero EE. Decoupling the structural and magnetic phase transformations in magneto-optic MnBi thin films by the partial substitution of Cr for Mn Applied Physics Letters. 72: 2337-2339. DOI: 10.1063/1.121355 |
0.343 |
|
1998 |
Wong WS, Sands T, Cheung NW. Damage-free separation of GaN thin films from sapphire substrates Applied Physics Letters. 72: 599-601. DOI: 10.1063/1.120816 |
0.435 |
|
1997 |
Wong WS, Schloss LF, Sudhir GS, Linder BP, Yu KM, Weber ER, Sands T, Cheung NW. Pulsed excimer laser processing of AlN/GaN thin films Materials Research Society Symposium - Proceedings. 449: 1011-1016. DOI: 10.1557/Proc-449-1011 |
0.347 |
|
1994 |
Yilmaz S, Gerhard-Multhaupt R, Bonner WA, Hwang DM, Inam A, Martinez JA, Ravi TS, Sands TD, Wilkens BJ, Wu XD, Venkatesan T. Electro-optic potassium-tantalate-niobate films prepared by pulsed laser deposition from segmented pellets Journal of Materials Research. 9: 1272-1279. DOI: 10.1557/Jmr.1994.1272 |
0.374 |
|
1994 |
Harshavardhan KS, Rajeswari M, Hwang DM, Chen CY, Sands T, Venkatesan T. Comparison Of The Critical Current Anisotropy In Epitaxial Yba2Cu3O7-X Films On (100) Laalo3 And (100) Yttria Stabilized Zirconia Journal of Materials Research. 9: 270-274. DOI: 10.1557/Jmr.1994.0270 |
0.335 |
|
1994 |
Tanaka M, Harbison JP, Sands T, Cheeks TL, Keramidas VG, Rothberg GM. Molecular Beam Epitaxy Of Mnas Thin Films On Gaas Journal of Vacuum Science & Technology B. 12: 1091-1094. DOI: 10.1116/1.587095 |
0.376 |
|
1994 |
Lee J, Ramesh R, Dutta B, Ravi TS, Sands T, Keramidas VG. Ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon Integrated Ferroelectrics. 5: 145-154. DOI: 10.1080/10584589408017007 |
0.324 |
|
1994 |
Ramesh R, Dutta B, Ravi TS, Lee J, Sands T, Keramidas VG. Scaling of ferroelectric properties in La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O capacitors Applied Physics Letters. 64: 1588-1590. DOI: 10.1063/1.111848 |
0.321 |
|
1994 |
Ramesh R, Lee J, Sands T, Keramidas VG, Auciello O. Oriented ferroelectric La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer Applied Physics Letters. 64: 2511-2513. DOI: 10.1063/1.111557 |
0.401 |
|
1994 |
Ramesh R, Sands T, Keramidas VG, Fork DK. Epitaxial ferroelectric thin films for memory applications Materials Science and Engineering B-Advanced Functional Solid-State Materials. 22: 283-289. DOI: 10.1016/0921-5107(94)90258-5 |
0.411 |
|
1994 |
Tanaka M, Harbison JP, Sands T, DeBoeck J, Cheeks TL, Keramidas VG. Magnetotransport properties of MBE-grown magnetic superlattices of Mn-based intermetallics on GaAs heterostructures Solid-State Electronics. 37: 1031-1036. DOI: 10.1016/0038-1101(94)90351-4 |
0.314 |
|
1994 |
Ramesh R, Sands T, Keramidas VG. Template approaches to growth of oriented oxide heterostructures on SiO 2 /Si Journal of Electronic Materials. 23: 19-23. DOI: 10.1007/Bf02651262 |
0.359 |
|
1993 |
Tanaka M, Harbison JP, Sands TD, Philips BA, DeBoeck J, Cheeks TL, Florez LT, Keramidas VG. Epitaxial ferromagnetic MnGa and (MnNi)Ga thin films with perpendicular magnetization on GaAs Materials Research Society Symposium Proceedings. 313: 507-512. DOI: 10.1557/Proc-313-507 |
0.355 |
|
1993 |
Ghonge SG, Goo E, Ramesh R, Sands T, Keramidas VG. Microstructure of Epitaxial Ferroelectric YBa2Cu3O7−x/Pb0.9La0.1(Zr0.2Ti0.8)0.975O3/YBa2Cu3O7−x Heterostructures on LaAlO3 Journal of the American Ceramic Society. 76: 3141-3143. DOI: 10.1111/J.1151-2916.1993.Tb06619.X |
0.387 |
|
1993 |
Cheeks TL, Brasil MJSP, De Boeck J, Harbison JP, Sands T, Tanaka M, Scherer A, Keramidas VG. Epitaxial τ (Mn,Ni)Al/(Al,Ga)As heterostructures: Magnetic and magneto‐optic properties Journal of Applied Physics. 73: 6121-6123. DOI: 10.1063/1.352721 |
0.302 |
|
1993 |
Sands T, De Boeck J, Harbison JP, Scherer A, Gilchrist HL, Cheeks TL, Miceli PF, Ramesh R, Keramidas VG. The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs Journal of Applied Physics. 73: 6399-6401. DOI: 10.1063/1.352609 |
0.38 |
|
1993 |
Ghonge SG, Goo E, Ramesh R, Sands T, Keramidas VG. Microstructure of epitaxial La0.5Sr0.5CoO3/ferroelectric Pb0.9La0.1 (Zr0.2Ti0.8)0.975O3/La0.5Sr0.5CoO3 heterostructures on LaAlO3 Applied Physics Letters. 63: 1628-1630. DOI: 10.1063/1.110717 |
0.382 |
|
1993 |
Ramesh R, Gilchrist H, Sands T, Keramidas VG, Haakenaasen R, Fork DK. Ferroelectric La‐Sr‐Co‐O/Pb‐Zr‐Ti‐O/La‐Sr‐Co‐O heterostructures on silicon via template growth Applied Physics Letters. 63: 3592-3594. DOI: 10.1063/1.110106 |
0.372 |
|
1993 |
Reitze DH, Haton E, Ramesh R, Etemad S, Leaird DE, Sands T, Karim Z, Tanguay AR. Electro-optic properties of single crystalline ferroelectric thin films Applied Physics Letters. 63: 596-598. DOI: 10.1063/1.109960 |
0.365 |
|
1993 |
Ramesh R, Sands T, Keramidas VG. Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films Applied Physics Letters. 63: 731-733. DOI: 10.1063/1.109943 |
0.384 |
|
1993 |
Tanaka M, Harbison JP, Sands T, Philips B, Cheeks TL, Boeck JD, Florez LT, Keramidas VG. Epitaxial MnGa/NiGa magnetic multilayers on GaAs Applied Physics Letters. 63: 696-698. DOI: 10.1063/1.109932 |
0.404 |
|
1993 |
Tanaka M, Harbison JP, Sands T, Cheeks TL, Boeck JD, Hwang DM, Florez LT, Keramidas VG. Epitaxial τMnAl/NiAl magnetic multilayers on AlAs/GaAs Applied Physics Letters. 63: 839-841. DOI: 10.1063/1.109871 |
0.387 |
|
1993 |
Lee J, Johnson L, Safari A, Ramesh R, Sands T, Gilchrist H, Keramidas VG. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors Applied Physics Letters. 63: 27-29. DOI: 10.1063/1.109739 |
0.379 |
|
1993 |
Tanaka M, Harbison JP, DeBoeck J, Sands T, Philips B, Cheeks TL, Keramidas VG. Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs Applied Physics Letters. 62: 1565-1567. DOI: 10.1063/1.108642 |
0.362 |
|
1993 |
de Boeck J, Sands T, Harbison J, Scherer A, Gilchrist H, Cheeks T, Tanaka M, Keramidas V. Non-volatile memory characteristics of submicrometre Hall structures fabricated in epitaxial ferromagnetic MnAl films on GaAs Electronics Letters. 29: 421. DOI: 10.1049/El:19930282 |
0.4 |
|
1993 |
Iycr VR, Kvam EP, Pcrry DL, Ramesh R, Sands TD, Keramidas V. Oriented growth in oxide thin film heterostructures Scripta Metallurgica Et Materiala. 29: 885-888. DOI: 10.1016/0956-716X(93)90376-4 |
0.368 |
|
1993 |
Tanaka M, Harbison JP, Sands T, Philips B, Cheeks TL, DeBoeck J, Florez LT, Keramidas VG. Epitaxial ferromagnetic MnGa/NiGa multilayers on GaAs Journal of Magnetism and Magnetic Materials. 126: 313-315. DOI: 10.1016/0304-8853(93)90612-6 |
0.309 |
|
1993 |
Harbison JP, Sands T, De Boeck J, Cheeks TL, Miceli P, Tanaka M, Florez LT, Wilkens BJ, Gilchrist HL, Keramidas VG. MBE growth of ferromagnetic (Mn,Ni)Al thin films on AlAs/GaAs Journal of Crystal Growth. 127: 650-654. DOI: 10.1016/0022-0248(93)90703-Y |
0.392 |
|
1993 |
Sands TD. Nanoscale engineering of metal/semiconductor interfaces Jom. 45: 61-64. DOI: 10.1007/Bf03222874 |
0.359 |
|
1992 |
Ramesh R, Inam A, Chan WK, Wilkens B, Tillerot F, Sands T, Tarascon JM, Bullington J, Evans J. Ferroelectric PbZr0.2Ti0.8O3 thin films on epitaxial Y-Ba-Cu-O Integrated Ferroelectrics. 1: 205-212. DOI: 10.1080/10584589208215712 |
0.394 |
|
1992 |
Ramesh R, Chan WK, Wilkens B, Gilchrist H, Sands T, Tarascon JM, Keramidas VG, Fork DK, Lee J, Safari A. Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures Applied Physics Letters. 61: 1537-1539. DOI: 10.1063/1.107488 |
0.359 |
|
1992 |
Cheeks TL, Brasil MJSP, Sands T, Harbison JP, Aspnes DE, Keramidas VG, Allen SJ. Magnetic and magneto‐optic properties of epitaxial ferromagnetic τ‐MnAl/(Al,Ga)As heterostructures Applied Physics Letters. 60: 1393-1395. DOI: 10.1063/1.107301 |
0.359 |
|
1992 |
Harshavardhan KS, Rajeswari M, Hwang DM, Chen CY, Sands T, Venkatesan T, Tkaczyk JE, Lay KW, Safari A. Dominant pinning mechanisms in YBa2Cu3O7−xfilms on single and polycrystalline yttria stabilized zirconia substrates Applied Physics Letters. 60: 1902-1904. DOI: 10.1063/1.107148 |
0.403 |
|
1992 |
Wang LC, Li YZ, Kappes M, Lau SS, Hwang DM, Schwarz SA, Sands T. The Si/Pd(Si,Ge) ohmic contact on n‐GaAs Applied Physics Letters. 60: 3016-3018. DOI: 10.1063/1.106794 |
0.324 |
|
1992 |
Schwarz SA, Pudensi MAA, Sands T, Gmitter TJ, Bhat R, Koza M, Wang LC, Lau SS. Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP Applied Physics Letters. 60: 1123-1125. DOI: 10.1063/1.106428 |
0.345 |
|
1992 |
Ramesh R, Inam A, Sands T, Rogers CT. Thin film YBaCuO high superconductors: structure-property relationships Materials Science and Engineering B-Advanced Functional Solid-State Materials. 14: 188-213. DOI: 10.1016/0921-5107(92)90119-T |
0.338 |
|
1992 |
Ramesh R, Chan WK, Wilkens B, Inam A, Tillerot F, Sands TD, Tarascon JM, Keramidas VG. Structure and properties of ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures Journal of Electronic Materials. 21: 513-518. DOI: 10.1007/Bf02655618 |
0.405 |
|
1991 |
Ramesh R, Chan W, Gilchrist H, Wilkens B, Sands T, Tarascon J, Keramidas V, Evans J, Gealy FD, Fork D. Oxide Ferroelectric /Cuprate Superconductor Heterostructures: Growth and Properties Mrs Proceedings. 243. DOI: 10.1557/Proc-243-477 |
0.391 |
|
1991 |
Sands T, Harbison J, Allen S, Leadbeater M, Cheeks T, Brasil M, Chang C, Ramesh R, Florez L, Derosa F, Keramidas V. Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization Mrs Proceedings. 231. DOI: 10.1557/Proc-231-341 |
0.379 |
|
1991 |
Ramesh R, Inam A, Hwang DM, Ravi TS, Sands T, Xi XX, Wu XD, Li Q, Venkatesan T, Kilaas R. The atomic structure of growth interfaces in Y--Ba--Cu--O thin films Journal of Materials Research. 6: 2264-2271. DOI: 10.1557/Jmr.1991.2264 |
0.391 |
|
1991 |
Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, Schwarz SA, Plumton DL, Kuech TF. An investigation of the Pd‐In‐Ge nonspiking Ohmic contact to n‐GaAs using transmission line measurement, Kelvin, and Cox and Strack structures Journal of Applied Physics. 69: 4364-4372. DOI: 10.1063/1.348360 |
0.355 |
|
1991 |
Leadbeater ML, Allen SJ, Derosa F, Harbison JP, Sands T, Ramesh R, Florez LT, Keramidas VG. Galvanomagnetic properties of epitaxial MnAl films on GaAs Journal of Applied Physics. 69: 4689-4691. DOI: 10.1063/1.348298 |
0.378 |
|
1991 |
Harshavardhan KS, Ramesh R, Ravi TS, Sampere S, Inam A, Chang CC, Hull G, Rajeswari M, Sands T, Venkatesan T, Reeves M, Tkaczyk JE, Lay KW. YBa2Cu3O7−xfilms on flexible, partially stabilized zirconia substrates with fully stabilized zirconia buffer layers Applied Physics Letters. 59: 1638-1640. DOI: 10.1063/1.106255 |
0.412 |
|
1991 |
Ramesh R, Inam A, Wilkens B, Chan WK, Sands T, Tarascon JM, Fork DK, Geballe TH, Evans J, Bullington J. Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon Applied Physics Letters. 59: 1782-1784. DOI: 10.1063/1.106199 |
0.395 |
|
1991 |
Yablonovitch E, Sands T, Hwang DM, Schnitzer I, Gmitter TJ, Shastry SK, Hill DS, Fan JCC. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond Applied Physics Letters. 59: 3159-3161. DOI: 10.1063/1.105771 |
0.342 |
|
1991 |
Ramesh R, Inam A, Chan WK, Tillerot F, Wilkens B, Chang CC, Sands T, Tarascon JM, Keramidas VG. Ferroelectric PbZr0.2Ti0.8O3thin films on epitaxial Y‐Ba‐Cu‐O Applied Physics Letters. 59: 3542-3544. DOI: 10.1063/1.105651 |
0.401 |
|
1991 |
Ramesh R, Inam A, Hwang DM, Sands TD, Chang CC, Hart DL. Surface outgrowth problem in c-axis oriented Y-Ba-Cu-O superconducting thin films Applied Physics Letters. 58: 1557-1559. DOI: 10.1063/1.105176 |
0.371 |
|
1991 |
Harbison JP, Sands T, Ramesh R, Florez LT, Wilkens BJ, Keramidas VG. MBE growth of ferromagnetic metastable epitaxial MnAl thin films on AlAs/GaAs heterostructures Journal of Crystal Growth. 111: 978-983. DOI: 10.1016/0022-0248(91)91118-T |
0.403 |
|
1991 |
Cheeks TL, Sands T, Nahory RE, Harbison JP, Gilchrist HL, Keramidas VG. Design of epitaxial metal/AlAs/GaAs structures for enhancement of the Schottky barrier height Journal of Electronic Materials. 20: 881-884. DOI: 10.1007/Bf02665978 |
0.349 |
|
1990 |
Olson DA, Yu KM, Washburn J, Sands T. Thin Film Reactions on Alloy Semiconductor Substrates Mrs Proceedings. 202. DOI: 10.1557/Proc-202-713 |
0.547 |
|
1990 |
PalmstrØM CJ, Harbison JP, Sands T, Ramesh R, Finstad TG, Mounier S, Zhu JG, Carter CB, Florez LT, Keramidas VG. Buried Metal/III-V Semiconductor Heteroepitaxy: Approaches to Lattice Matching Mrs Proceedings. 198: 153. DOI: 10.1557/Proc-198-153 |
0.325 |
|
1990 |
Harbison JP, Sands T, Ramesh R, Tabatabaie N, Gilchrist HL, Florez LT, Keramidas VG. Metallic quantum wells grown by molecular‐beam epitaxy Journal of Vacuum Science & Technology B. 8: 242-245. DOI: 10.1116/1.584818 |
0.359 |
|
1990 |
Schwarz SA, Marshall ED, Allen LH, Palmstrøm CJ, Han CC, Mayer JW, Schwartz CL, Lau SS, Sands T, Shantharama LG, Harbison JP, Florez LT. Backside secondary ion mass spectrometry investigation of ohmic and Schottky contacts on GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2079-2083. DOI: 10.1116/1.577006 |
0.34 |
|
1990 |
Sands T, Harbison JP, Leadbeater ML, Allen SJ, Hull GW, Ramesh R, Keramidas VG. Epitaxial ferromagnetic τ-MnAl films on GaAs Applied Physics Letters. 57: 2609-2611. DOI: 10.1063/1.103826 |
0.385 |
|
1990 |
Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. Stable and shallow PdIn ohmic contacts ton‐GaAs Applied Physics Letters. 56: 2129-2131. DOI: 10.1063/1.102993 |
0.39 |
|
1990 |
Cheeks TL, Sands T, Nahory RE, Harbison J, Tabatabaie N, Gilchrist HL, Wilkens BJ, Keramidas VG. Electrical and optical characterization of back-to-back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double-heterostructure diodes Applied Physics Letters. 56: 1043-1045. DOI: 10.1063/1.102609 |
0.349 |
|
1990 |
Sands T, Palmstrøm CJ, Harbison JP, Keramidas VG, Tabatabaie N, Cheeks TL, Ramesh R, Silberberg Y. Stable and epitaxial metal/III-V semiconductor heterostructures Materials Science Reports. 5: 99-170. DOI: 10.1016/S0920-2307(05)80003-9 |
0.344 |
|
1990 |
Sands T, Harbison JP, Ramesh R, Palmstrøm CJ, Florez LT, Keramidas VG. Interface crystallography and stability in epitaxial metal (NiAl, CoAl)/III-V Semiconductor heterostructures Materials Science and Engineering B. 6: 147-157. DOI: 10.1016/0921-5107(90)90091-O |
0.39 |
|
1990 |
Allen SJ, Tabatabaie N, Palmstrøm CJ, Mounier S, Hull GW, Sands T, DeRosa F, Gilchrist HL, Garrison KC. Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAs Surface Science. 228: 13-15. DOI: 10.1016/0039-6028(90)90247-6 |
0.357 |
|
1990 |
Sands T, Harbison JP, Tabatabaie N, Chan WK, Gilchrist HL, Cheeks TL, Florez LT, Keramidas VG. Epitaxial metal(NiAl)-semiconductor(III V) heterostructures by MBE Surface Science. 228: 1-8. DOI: 10.1016/0039-6028(90)90245-4 |
0.369 |
|
1989 |
Caron-Popowich R, Washburn J, Sands T, Marshall ED. Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization Mrs Proceedings. 148. DOI: 10.1557/Proc-148-53 |
0.524 |
|
1989 |
Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Cheeks TL, Florez LT, Keramidas VG. Negative transconductance in monocrystalline (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor tunneling transistors Ieee Transactions On Electron Devices. 36: 2620-2621. DOI: 10.1109/16.43740 |
0.385 |
|
1989 |
Palmstrøm CJ, Fimland BO, Sands T, Garrison KC, Bartynski RA. Epitaxial CoGa and textured CoAs contacts on Ga1-xAl xAs fabricated by molecular-beam epitaxy Journal of Applied Physics. 65: 4753-4758. DOI: 10.1063/1.343228 |
0.364 |
|
1989 |
Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Florez LT, Keramidas VG. Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As Applied Physics Letters. 54: 2112-2114. DOI: 10.1063/1.101144 |
0.342 |
|
1989 |
Harbison JP, Sands T, Tabatabaie N, Chan WK, Florez LT, Keramidas VG. MBE growth of AlGaAs/NiAl/AlGaAs heterostructures: A novel epitaxial III–V semiconductor/metal system Journal of Crystal Growth. 95: 425-426. DOI: 10.1016/0022-0248(89)90434-X |
0.373 |
|
1988 |
Palmstrøm C, Garrison K, Fimland B, Sands T, Bartynski R. Fabrication and Electrical Properties of MBE Grown Metal-Gallium and Metal-Arsenic Compounds on Ga1-xAlxAs Mrs Proceedings. 144. DOI: 10.1557/Proc-144-583 |
0.383 |
|
1988 |
Wang LC, Zhang B, Fang F, Marshall ED, Lau SS, Sands T, Kuech TF. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system Journal of Materials Research. 3: 922-930. DOI: 10.1557/Jmr.1988.0922 |
0.339 |
|
1988 |
Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Keramidas VG. Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor Ieee Transactions On Electron Devices. 35: 2453-2454. DOI: 10.1109/16.8890 |
0.377 |
|
1988 |
Harbison JP, Sands T, Tabatabaie N, Chan WK, Florez LT, Keramidas VG. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures Applied Physics Letters. 53: 1717-1719. DOI: 10.1063/1.99804 |
0.386 |
|
1988 |
Sands T. Stability and epitaxy of NiAl and related intermetallic films on III‐V compound semiconductors Applied Physics Letters. 52: 197-199. DOI: 10.1063/1.99518 |
0.365 |
|
1988 |
Sands T, Harbison JP, Chan WK, Schwarz SA, Chang CC, Palmstrøm CJ, Keramidas VG. Epitaxial growth of GaAs/NiAl/GaAs heterostructures Applied Physics Letters. 52: 1216-1218. DOI: 10.1063/1.99162 |
0.401 |
|
1988 |
Sands T, Chan WK, Chang CC, Chase EW, Keramidas VG. NiAl/n‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing Applied Physics Letters. 52: 1338-1340. DOI: 10.1063/1.99152 |
0.402 |
|
1988 |
Caron‐Popowich R, Washburn J, Sands T, Kaplan AS. Phase formation in the Pd‐InP system Journal of Applied Physics. 64: 4909-4913. DOI: 10.1063/1.342440 |
0.568 |
|
1988 |
Tabatabaie N, Sands T, Harbison JP, Gilchrist HL, Keramidas VG. Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals Applied Physics Letters. 53: 2528-2530. DOI: 10.1063/1.100198 |
0.358 |
|
1988 |
Sands T. Compound semiconductor contact metallurgy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 1: 289-312. DOI: 10.1016/0921-5107(88)90010-4 |
0.384 |
|
1987 |
Sands T, Keramidas VG, Yu AJ, Yu K, Gronsky R, Washburn J. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies Journal of Materials Research. 2: 262-275. DOI: 10.1557/Jmr.1987.0262 |
0.676 |
|
1987 |
Yu KM, Walukiewicz W, Jaklevic JM, Haller EE, Sands T. Effects of interface reactions on electrical characteristics of metal-GaAs contacts Applied Physics Letters. 51: 189-191. DOI: 10.1063/1.98918 |
0.404 |
|
1987 |
Banwell T, Nicolet M-, Sands T, Grunthaner PJ. Chemical effects in ion mixing of a ternary system (metal-SiO2) Applied Physics Letters. 50: 571-573. DOI: 10.1063/1.98138 |
0.345 |
|
1987 |
Sands T, Chang CC, Kaplan AS, Keramidas VG, Krishnan KM, Washburn J. Ni-InP reaction: Formation of amorphous and crystalline ternary phases Applied Physics Letters. 50: 1346-1348. DOI: 10.1063/1.97851 |
0.54 |
|
1987 |
Yu KM, Sands T, Jaklevic JM, Haller EE. Interfacial interactions of evaporated iridium thin films with (100) GaAs Journal of Applied Physics. 62: 1815-1820. DOI: 10.1063/1.339562 |
0.366 |
|
1987 |
Sands T, Keramidas VG, Yu KM, Washburn J, Krishnan K. A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) Journal of Applied Physics. 62: 2070-2079. DOI: 10.1063/1.339553 |
0.56 |
|
1987 |
Yu KM, Cheung SK, Sands T, Jaklevic JM, Haller EE. Correlation between solid‐state reaction and electrical properties of the Rh/GaAs Schottky contact Journal of Applied Physics. 61: 1099-1102. DOI: 10.1063/1.338205 |
0.409 |
|
1986 |
Hong JM, Wang S, Flood JD, Merz JL, Sands T, Washburn J. Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Journal of Vacuum Science & Technology B. 4: 629-630. DOI: 10.1116/1.583395 |
0.518 |
|
1986 |
Ding J, Washburn J, Sands T, Keramidas VG. In/GaAs reaction: Effect of an intervening oxide layer Applied Physics Letters. 49: 818-820. DOI: 10.1063/1.97557 |
0.551 |
|
1986 |
Hong JM, Wang S, Sands T, Washburn J, Flood JD, Merz JL, Low T. Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Applied Physics Letters. 48: 142-144. DOI: 10.1063/1.96977 |
0.611 |
|
1986 |
Sands T, Keramidas VG, Washburn J, Gronsky R. Structure and composition of NixGaAs Applied Physics Letters. 48: 402-404. DOI: 10.1063/1.96511 |
0.66 |
|
1986 |
Yu KM, Cheung SK, Sands T, Jaklevic JM, Cheung NW, Haller EE. Schottky barrier degradation of the W/GaAs system after high‐temperature annealing Journal of Applied Physics. 60: 3235-3242. DOI: 10.1063/1.337744 |
0.363 |
|
1986 |
Sands T, Keramidas VG, Gronsky R, Washburn J. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases Thin Solid Films. 136: 105-122. DOI: 10.1016/0040-6090(86)90113-6 |
0.667 |
|
1986 |
Sands T. Contacts to Compound Semiconductors Jom. 38: 31-33. DOI: 10.1007/Bf03258577 |
0.332 |
|
1985 |
Sands T, Keramidas VG, Yu AJ, Yu KM, Gronsky R, Washburn J. Phase Formation Sequence In The Pd-Gaas System Mrs Proceedings. 54. DOI: 10.1557/Proc-54-367 |
0.547 |
|
1985 |
Sadana DK, Zavada JM, Jenkinson HA, Sands T. High resolution transmission electron microscopy of proton-implanted gallium arsenide Applied Physics Letters. 47: 691-693. DOI: 10.1063/1.96060 |
0.301 |
|
1985 |
Sands T, Washburn J, Myers E, Sadana DK. On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 337-341. DOI: 10.1016/0168-583X(85)90577-4 |
0.54 |
|
1985 |
Sands T, Keramidas VG, Gronsky R, Washburn J. Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs Materials Letters. 3: 409-413. DOI: 10.1016/0167-577X(85)90089-8 |
0.681 |
|
1985 |
Sands T, Washburn J, Gronsky R. Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interface Materials Letters. 3: 247-250. DOI: 10.1016/0167-577X(85)90066-7 |
0.656 |
|
1984 |
Maszara W, Sadana DK, Rozgonyi GA, Sands T, Washburn J, Wortman JJ. Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations Mrs Proceedings. 35. DOI: 10.1557/Proc-35-277 |
0.487 |
|
1984 |
Sands T, Washburn J, Gronsky R, Maszara W, Sadana DK, Rozgonyi GA. Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon Applied Physics Letters. 45: 982-984. DOI: 10.1063/1.95446 |
0.654 |
|
1984 |
Sands T, Sadana DK, Gronsky R, Washburn J. High resolution structural characterization of the amorphous-crystalline interface in Se+-implanted GaAs Applied Physics Letters. 44: 874-876. DOI: 10.1063/1.94963 |
0.661 |
|
1984 |
Sadana DK, Sands T, Washburn J. High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization Applied Physics Letters. 44: 623-625. DOI: 10.1063/1.94856 |
0.558 |
|
1984 |
Zhu MF, Suni I, Nicolet M-, Sands T. Reaction of amorphous Ni‐W and Ni‐N‐W films with substrate silicon Journal of Applied Physics. 56: 2740-2745. DOI: 10.1063/1.333804 |
0.407 |
|
1984 |
Sands T, Washburn J, Gronsky R. Interface morphology and phase distribution in the Cu2-xS/CdS heterojunction: A transmission electron microscope investigation Solar Energy Materials. 10: 349-370. DOI: 10.1016/0165-1633(84)90041-8 |
0.643 |
|
1983 |
Sadana DK, Sands T, Washburn J. High Resolution Transmission Electron Microscopy Study of Se + Implanted and Annealed GaAs Mrs Proceedings. 27. DOI: 10.1557/Proc-27-311 |
0.317 |
|
1982 |
SANDS TD, WASHBURN J, GRONSKY R. HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE (CU//2S) AND THE TRANSFORMATION TO DJURLEITE (CU//1//. //9//7 //T//O //1//. //9//4S) Phys Status Solidi A. 551-559. DOI: 10.1002/Pssa.2210720216 |
0.63 |
|
Low-probability matches (unlikely to be authored by this person) |
1991 |
Allen SJ, Derosa F, Gilchrist HL, Harbison JP, Leadbeater M, Miceli PF, Palmstro/m CJ, Ramesh R, Sands T, Zrenner A. Magnetotransport in magnetic epitaxial metal layers buried in (Ga, Al)As heterostructures (invited) (abstract) Journal of Applied Physics. 69: 6117. DOI: 10.1063/1.347785 |
0.297 |
|
1999 |
Krüiger J, Shapiro N, Subramanya S, Kim Y, Siegle H, Perlin P, Weber ER, Wong WS, Sands T, Cheung NW, Molnar RJ. The influence of the sapphire substrate on the temperature dependence of the GaN bandgap Mrs Proceedings. 572: 289. DOI: 10.1557/Proc-572-289 |
0.297 |
|
2001 |
Kaul AB, Sands TD, Van Duzer T. High-Tc superconducting NbN films with low particulate density grown at 25 °C using pulsed laser deposition Journal of Materials Research. 16: 1223-1226. |
0.296 |
|
1992 |
Schwarz SA, Sands T, Bhat R, Koza M, Pudensi MAA, Wang LC, Lau SS. Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry Mrs Proceedings. 260. DOI: 10.1557/Proc-260-525 |
0.29 |
|
1985 |
Sadana DK, Zavada JM, Jenkinson HA, Sands T. High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide Mrs Proceedings. 46: 377. DOI: 10.1557/Proc-46-377 |
0.288 |
|
1992 |
Silberberg Y, Sands T. Optical properties of metallic quantum wells Ieee Journal of Quantum Electronics. 28: 1663-1669. DOI: 10.1109/3.142553 |
0.288 |
|
2015 |
Saha B, Saber S, Naik GV, Boltasseva A, Stach EA, Kvam EP, Sands TD. Development of epitaxial AlxSc1−xN for artificially structured metal/semiconductor superlattice metamaterials (Phys. Status Solidi B 2/2015) Physica Status Solidi (B). 252: n/a-n/a. DOI: 10.1002/Pssb.201570309 |
0.285 |
|
1999 |
Song DW, Caylor C, Liu WL, Zeng T, Borca-Tasciuc T, Sands TD, Chen G. Thermal conductivity characterization of skutterudite thin films International Conference On Thermoelectrics, Ict, Proceedings. 679-682. |
0.282 |
|
1992 |
Ramesh R, Chan WK, Wilkens B, Sands T, Tarascon JM, Keramidas VG, Evans JT. Fatigue and aging in ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructures Integrated Ferroelectrics. 1: 1-15. DOI: 10.1080/10584589208215562 |
0.28 |
|
1991 |
Sands T, Harbison JP, Palmstrøm CJ, Ramesh R, Keramidas VG. A Template Approach to Metal/III-V Semiconductor Epitaxy Mrs Proceedings. 221: 271. DOI: 10.1557/Proc-221-271 |
0.277 |
|
1989 |
Marshall ED, Lau SS, Palmstrøm CJ, Sands T, Schwartz CL, Schwarz SA, Harbison JP, Florez LT. Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System Mrs Proceedings. 148. DOI: 10.1557/Proc-148-163 |
0.277 |
|
1994 |
Cheeks TL, Harbison JP, Tanaka M, Hwang DM, Sands T, Keramidas VG. Magnetic properties of epitaxial MnAl/NiAl magnetic multilayers grown on GaAs heterostructures (invited) Journal of Applied Physics. 75: 6665-6669. DOI: 10.1063/1.356889 |
0.274 |
|
1988 |
Sands T, Harbison JP, Tabatabaie N, Chan WK, Gilchrist HL, Schwarz SA, Schwartz CL, Florez LT, Keramidas VG. Growth and Properties of (Al, Ga)As / NiAl / (Al, Ga)As: An Epitaxical Semiconductor / Metal / Semiconductor System Mrs Proceedings. 144. DOI: 10.1557/Proc-144-571 |
0.271 |
|
2003 |
Radkowski PPF, Sands TD. Calculating seebeck coefficients for arbitrary temperature gradients Materials Research Society Symposium - Proceedings. 793: 207-212. DOI: 10.1557/Proc-793-S8.7 |
0.267 |
|
1992 |
Harshavardhan KS, Rajeswari M, Hwang DM, Chen CY, Sands TD, Venkatesan T, Tkaczyk JE, Lay KW, Safari A, Johnson L. Artificial in-plane ordering of textured YBa2Cu3O7-x films deposited on polycrystalline yttria-stabilized zirconia substrates Journal of Superconductivity. 5: 533-537. DOI: 10.1007/Bf00618244 |
0.263 |
|
2000 |
Song DW, Liu WL, Zeng T, Borca-Tasciuc T, Chen G, Caylor JC, Sands TD. Thermal conductivity of skutterudite thin films and superlattices Applied Physics Letters. 77: 3854-3856. |
0.256 |
|
2003 |
Radkowski PPF, Sands TD. A coupled cellular automata representation of nanoscale transport across semiconductor interfaces Materials Research Society Symposium - Proceedings. 796: 151-162. DOI: 10.1557/Proc-796-V3.5 |
0.254 |
|
1988 |
Sands T, Marshall ED, Wang LC. Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases Journal of Materials Research. 3: 914-921. DOI: 10.1557/Jmr.1988.0914 |
0.251 |
|
1985 |
Sands T. Contributions of Electron Microscopy to the Understanding of Reactions on Compound Semiconductor Surfaces Mrs Proceedings. 62: 25. DOI: 10.1557/Proc-62-25 |
0.25 |
|
2001 |
Knollenberg CF, Sands TD, Nickles AS, White RM. Issues in the flexible integration of sputter-deposited PZT thin films with polysilicon and Ti/Pt electrode layers for use as sensors and actuators in Microelectromechanical Systems (MEMS) Materials Research Society Symposium - Proceedings. 657. |
0.249 |
|
2002 |
Radkowski PPF, Sands TD. Discrete state simulation of electrical conductivity and the Peltier effect for arbitrary band structures Materials Research Society Symposium - Proceedings. 691: 195-200. DOI: 10.1557/Proc-691-G8.5 |
0.229 |
|
1998 |
Krishnan K, Sands T. Preface to the Special Section on ``Coupled Property Issues in Integrated Microstructures'' Acta Materialia. 46: 3715. DOI: 10.1016/S1359-6454(98)00082-2 |
0.228 |
|
2003 |
Loryuenyong V, Sands T, Cheung NW. Photo-Polymer Wafer Bonding for Double Layer Transfer Mrs Proceedings. 768. DOI: 10.1557/Proc-768-G5.6 |
0.22 |
|
1993 |
Ramesh R, Sands T, Keramidas VG, Fork DK. Ferroelectric La-Sr-Co-O / Pb-Zr-TI-O / La-Sr-Co-O Heterostructures on Silicon: Reliability Testing Mrs Proceedings. 310: 195. DOI: 10.1557/Proc-310-195 |
0.218 |
|
2014 |
Sanberg PR, Gharib M, Harker PT, Kaler EW, Marchase RB, Sands TD, Arshadi N, Sarkar S. Changing the academic culture: valuing patents and commercialization toward tenure and career advancement. Proceedings of the National Academy of Sciences of the United States of America. 111: 6542-7. PMID 24778248 DOI: 10.1073/Pnas.1404094111 |
0.187 |
|
2013 |
Naik GV, Saha B, Liu J, Saber SM, Stach E, Joseph Irudayaraj MK, Sands TD, Shalaev VM, Boltasseva A. A titanium nitride based metamaterial for applications in the visible Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. |
0.168 |
|
2013 |
Naik GV, Saha B, Liu J, Saber SM, Stach E, Joseph Irudayaraj MK, Sands TD, Shalaev VM, Boltasseva A. A titanium nitride based metamaterial for applications in the visible Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. |
0.168 |
|
2007 |
Amama PB, Cola BA, Sands TD, Xu X, Fisher TS. Dendrimer-assisted controlled growth of carbon nanotubes for enhanced thermal interface conductance Aiche Annual Meeting, Conference Proceedings. |
0.145 |
|
2003 |
Chediak JA, Luo Z, Seo J, Cheung N, Lee LP, Sands TD. Hybrid integration of CdS filters with GaN LEDs for biophotonic chips Proceedings of the Ieee Micro Electro Mechanical Systems (Mems). 323-326. |
0.132 |
|
2001 |
Sitti M, Campolo D, Yan J, Fearing RS, Su T, Taylor D, Sands TD. Development of PZT and PZN-PT based unimorph actuators for micromechanical flapping mechanisms Proceedings - Ieee International Conference On Robotics and Automation. 4: 3839-3846. DOI: 10.1109/ROBOT.2001.933216 |
0.121 |
|
2024 |
Sands T. Bio-Inspired Space Robotic Control Compared to Alternatives. Biomimetics (Basel, Switzerland). 9. PMID 38392155 DOI: 10.3390/biomimetics9020108 |
0.12 |
|
2012 |
Naik GV, Schroeder J, Guler U, Ni X, Kildishev AV, Sands TD, Boltasseva A. Metal nitrides for plasmonic applications Optics Infobase Conference Papers. |
0.117 |
|
2012 |
Naik GV, Schroeder J, Guler U, Ni X, Kildishev AV, Sands TD, Boltasseva A. Metal nitrides for plasmonic applications 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.117 |
|
2007 |
Kim S, Sands TD. Hexagonal prism blue laser diode with low threshold power using whispering gallery mode (WGM) resonances 65th Drc Device Research Conference. 101-102. DOI: 10.1109/DRC.2007.4373669 |
0.075 |
|
2021 |
Yao P, Sands T. Micro Satellite Orbital Boost by Electrodynamic Tethers. Micromachines. 12. PMID 34442538 DOI: 10.3390/mi12080916 |
0.062 |
|
2023 |
Koo SM, Sands T. Bilinear Interpolation of Three-Dimensional Gain-Scheduled Autopilots. Sensors (Basel, Switzerland). 24. PMID 38202876 DOI: 10.3390/s24010013 |
0.062 |
|
2024 |
Kuck E, Sands T. Space Robot Sensor Noise Amelioration Using Trajectory Shaping. Sensors (Basel, Switzerland). 24. PMID 38276358 DOI: 10.3390/s24020666 |
0.06 |
|
2021 |
Sands T. Virtual Sensoring of Motion Using Pontryagin's Treatment of Hamiltonian Systems. Sensors (Basel, Switzerland). 21. PMID 34283136 DOI: 10.3390/s21134603 |
0.053 |
|
2022 |
Zhai H, Sands T. Comparison of Deep Learning and Deterministic Algorithms for Control Modeling. Sensors (Basel, Switzerland). 22. PMID 36080819 DOI: 10.3390/s22176362 |
0.053 |
|
2023 |
Sands T. Inducing Performance of Commercial Surgical Robots in Space. Sensors (Basel, Switzerland). 23. PMID 36772552 DOI: 10.3390/s23031510 |
0.05 |
|
2022 |
Raigoza K, Sands T. Autonomous Trajectory Generation Comparison for De-Orbiting with Multiple Collision Avoidance. Sensors (Basel, Switzerland). 22. PMID 36146415 DOI: 10.3390/s22187066 |
0.049 |
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2023 |
Pittella A, Sands T. Proposals for Surmounting Sensor Noises. Sensors (Basel, Switzerland). 23. PMID 36991881 DOI: 10.3390/s23063169 |
0.048 |
|
2022 |
Sands T. Treatise on Analytic Nonlinear Optimal Guidance and Control Amplification of Strictly Analytic (Non-Numerical) Methods. Frontiers in Robotics and Ai. 9: 884669. PMID 36274916 DOI: 10.3389/frobt.2022.884669 |
0.046 |
|
2022 |
Wilt E, Sands T. Microsatellite Uncertainty Control Using Deterministic Artificial Intelligence. Sensors (Basel, Switzerland). 22. PMID 36433317 DOI: 10.3390/s22228723 |
0.037 |
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2020 |
Crow MM, Alger J, Amiridis M, Assanis D, Barron E, Becker MP, Blank RM, Block GD, Bollinger LC, Brown RA, Burwell SM, Cassidy CM, Clements JP, Currall S, DeGioia JJ, ... ... Sands TD, et al. Support U.S. research during COVID-19. Science (New York, N.Y.). 370: 539-540. PMID 33122376 DOI: 10.1126/science.abf1225 |
0.032 |
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1998 |
Sands TD, Pynn BR. Management considerations for the pregnant or nursing emergency patient Ontario Dentist. 75: 17-19. PMID 10518900 |
0.019 |
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2001 |
Pynn BR, Sands TD, Bradley G. Benign cementoblastoma: a case report Journal (Canadian Dental Association). 67: 260-262. PMID 11398388 |
0.015 |
|
2007 |
Sands TD. Recreational illicit drug use Texas Dental Journal. 124: 594-599. PMID 17711050 |
0.01 |
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2000 |
Haas DA, Pynn BR, Sands TD. Drug use for the pregnant or lactating patient General Dentistry. 48: 54-60. PMID 11199555 |
0.01 |
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