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David A. Ewoldt, Ph.D. - Publications

Affiliations: 
2011 Materials Engineering Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Ng TB, Ewoldt DA, Shepherd DA, Loboda MJ. Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 385-388. DOI: 10.1002/Pssc.201400159  0.409
2015 Chung G, Loboda MJ, Carlson E, Ewoldt D, Ng T, Shepherd D. Investigation of stress, defect structure and electrical conduction in large diameter III-nitride epitaxy on silicon substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 418-422. DOI: 10.1002/Pssc.201400137  0.41
2014 Schroeder JL, Ewoldt DA, Amatya R, Ram RJ, Shakouri A, Sands TD. Bulk-like laminated nitride Metal/Semiconductor superlattices for thermoelectric devices Journal of Microelectromechanical Systems. 23: 672-680. DOI: 10.1109/Jmems.2013.2282743  0.659
2011 Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605  0.709
2011 Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q  0.73
2010 Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455  0.733
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424  0.694
2010 Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024  0.721
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972  0.719
2010 Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998  0.745
2008 Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541  0.69
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