Year |
Citation |
Score |
2015 |
Ng TB, Ewoldt DA, Shepherd DA, Loboda MJ. Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 385-388. DOI: 10.1002/Pssc.201400159 |
0.409 |
|
2015 |
Chung G, Loboda MJ, Carlson E, Ewoldt D, Ng T, Shepherd D. Investigation of stress, defect structure and electrical conduction in large diameter III-nitride epitaxy on silicon substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 418-422. DOI: 10.1002/Pssc.201400137 |
0.41 |
|
2014 |
Schroeder JL, Ewoldt DA, Amatya R, Ram RJ, Shakouri A, Sands TD. Bulk-like laminated nitride Metal/Semiconductor superlattices for thermoelectric devices Journal of Microelectromechanical Systems. 23: 672-680. DOI: 10.1109/Jmems.2013.2282743 |
0.659 |
|
2011 |
Liang Z, Wildeson IH, Colby R, Ewoldt DA, Zhang T, Sands TD, Stach EA, Benes B, García RE. Built-in electric field minimization in (In, Ga)N nanoheterostructures. Nano Letters. 11: 4515-9. PMID 21942457 DOI: 10.1021/Nl1044605 |
0.709 |
|
2011 |
Wildeson IH, Ewoldt DA, Colby R, Stach EA, Sands TD. Controlled growth of ordered nanopore arrays in GaN. Nano Letters. 11: 535-40. PMID 21171632 DOI: 10.1021/Nl103418Q |
0.73 |
|
2010 |
Colby R, Liang Z, Wildeson IH, Ewoldt DA, Sands TD, García RE, Stach EA. Dislocation filtering in GaN nanostructures. Nano Letters. 10: 1568-73. PMID 20397703 DOI: 10.1021/Nl9037455 |
0.733 |
|
2010 |
Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. Publisher's Note: “GaN nanostructure design for optimal dislocation filtering” [J. Appl. Phys. 108, 074313 (2010)] Journal of Applied Physics. 108: 109901. DOI: 10.1063/1.3518424 |
0.694 |
|
2010 |
Liang Z, Colby R, Wildeson IH, Ewoldt DA, Sands TD, Stach EA, García RE. GaN nanostructure design for optimal dislocation filtering Journal of Applied Physics. 108. DOI: 10.1063/1.3491024 |
0.721 |
|
2010 |
Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. Publisher's Note: “III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy” [J. Appl. Phys. 108, 044303 (2010)] Journal of Applied Physics. 108: 079907. DOI: 10.1063/1.3488972 |
0.719 |
|
2010 |
Wildeson IH, Colby R, Ewoldt DA, Liang Z, Zakharov DN, Zaluzec NJ, García RE, Stach EA, Sands TD. III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3466998 |
0.745 |
|
2008 |
Oliver MH, Schroeder JL, Ewoldt DA, Wildeson IH, Rawat V, Colby R, Cantwell PR, Stach EA, Sands TD. Organometallic vapor phase epitaxial growth of GaN on ZrNAlNSi substrates Applied Physics Letters. 93. DOI: 10.1063/1.2953541 |
0.69 |
|
Low-probability matches (unlikely to be authored by this person) |
2013 |
Tong F, Yapabandara K, Yang CW, Khanal M, Jiao C, Goforth M, Ozden B, Ahyi A, Hamilton M, Niu G, Ewoldt DA, Chung G, Park M. Spectroscopic photo I-V diagnostics of nitride-based high electron mobility transistor structures on Si wafers Electronics Letters. 49: 1547-1548. DOI: 10.1049/El.2013.3404 |
0.282 |
|
Hide low-probability matches. |